Showing 1–17 of 17 results for author: Lim, W L

Field-effect diode based on electron-induced Mott transition in NdNiO3

Authors: W. L. Lim, E. J. Moon, J. W. Freeland, D. J. Meyers, M. Kareev, J. Chakhalian, S. Urazhdin

Abstract: We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characterist… ▽ More We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition. △ Less

Submitted 9 October, 2012; originally announced October 2012.

Comments: 4 pages, 5 Figures

Journal ref: Appl. Phys. Lett. 101, 143111 (2012)

Spectral Characteristics of the Microwave Emission by the Spin Hall Nano-Oscillator

Authors: R. H. Liu, W. L. Lim, S. Urazhdin

Abstract: We utilized microwave spectroscopy to study the magnetization oscillations locally induced in a Permalloy film by a pure spin current, which is generated due to the spin Hall effect in an adjacent Pt layer. The oscillation frequency is lower than the ferromagnetic resonance of Permalloy, indicating that the oscillation forms a self-localized nonpropagating spin-wave soliton. At cryogenic temperatu… ▽ More We utilized microwave spectroscopy to study the magnetization oscillations locally induced in a Permalloy film by a pure spin current, which is generated due to the spin Hall effect in an adjacent Pt layer. The oscillation frequency is lower than the ferromagnetic resonance of Permalloy, indicating that the oscillation forms a self-localized nonpropagating spin-wave soliton. At cryogenic temperatures, the spectral characteristics are remarkably similar to the traditional spin-torque nano-oscillators driven by spin-polarized currents. However, the linewidth of the oscillation increases exponentially with temperature and an additional peak appears in the spectrum below the ferromagnetic resonance, suggesting that the spectral characteristics are determined by interplay between two localized dynamical states. △ Less

Submitted 25 February, 2015; v1 submitted 9 October, 2012; originally announced October 2012.

Comments: Selected by the editors of PRL to be an Editors' Suggestion and featured in Physics (see Viewpoint: Make your Spins Spin)

Journal ref: Phys. Rev. Lett. 110, 147601 (2013)

Temperature-dependent proximity magnetism in Pt

Authors: W. L. Lim, N. Ebrahim-Zadeh, H. G. E. Hentschel, S. Urazhdin

Abstract: We experimentally demonstrate the existence of magnetic coupling between two ferromagnets separated by a thin Pt layer. The coupling remains ferromagnetic regardless of the Pt thickness, and exhibits a significant dependence on temperature. Therefore, it cannot be explained by the established mechanisms of magnetic coupling across nonmagnetic spacers. We show that the experimental results are cons… ▽ More We experimentally demonstrate the existence of magnetic coupling between two ferromagnets separated by a thin Pt layer. The coupling remains ferromagnetic regardless of the Pt thickness, and exhibits a significant dependence on temperature. Therefore, it cannot be explained by the established mechanisms of magnetic coupling across nonmagnetic spacers. We show that the experimental results are consistent with the presence of magnetism induced in Pt in proximity to ferromagnets, in direct analogy to the well-known proximity effects in superconductivity. △ Less

Submitted 9 September, 2012; originally announced September 2012.

Comments: 4 pages, 3 figures

Current-Induced Dynamics in Almost Symmetric Magnetic Nanopillars

Authors: Weng Lee Lim, Andrew Higgins, Sergei Urazhdin

Abstract: Magnetic nanodevices usually include a free layer whose configuration can be changed by spin-polarized current via the spin transfer effect, and a fixed reference layer. Here, we demonstrate that the roles of the free and the reference layers interchange over a small range of their relative thicknesses. Precession of both layers can be induced by spin transfer in symmetric devices, but the dynam… ▽ More Magnetic nanodevices usually include a free layer whose configuration can be changed by spin-polarized current via the spin transfer effect, and a fixed reference layer. Here, we demonstrate that the roles of the free and the reference layers interchange over a small range of their relative thicknesses. Precession of both layers can be induced by spin transfer in symmetric devices, but the dynamics of one of the layers is rapidly suppressed in asymmetric devices. We interpret our results in terms of the dynamical coupling between magnetic layers due to spin transfer. △ Less

Submitted 5 October, 2008; originally announced October 2008.

Comments: 4 pages, 3 figures

Dynamical Regimes Induced by Spin Transfer in Magnetic Nanopillars

Authors: Weng Lee Lim, Andrew Higgins, Sergei Urazhdin

Abstract: We demonstrate the predicted out-of-plane precession induced by spin transfer in magnetic nanostructures with in-plane magnetic field. We show that other magnetic excitations have a significant effect on the stability of the out-of plane precession, making it extremely sensitive to the orientation of the applied magnetic field. The data are supported with micromagnetic simulations. Our results e… ▽ More We demonstrate the predicted out-of-plane precession induced by spin transfer in magnetic nanostructures with in-plane magnetic field. We show that other magnetic excitations have a significant effect on the stability of the out-of plane precession, making it extremely sensitive to the orientation of the applied magnetic field. The data are supported with micromagnetic simulations. Our results elucidate the relation between the excitation spectrum and the specific dynamical behaviors of nanoscale magnets. △ Less

Submitted 16 July, 2008; v1 submitted 28 June, 2008; originally announced June 2008.

Comments: 4 pages, 4 figures

Thermal Dynamics in Symmetric Magnetic Nanopillars Driven by Spin Transfer

Authors: Weng L. Lim, Nicholas Anthony, Andrew Higgins, Sergei Urazhdin

Abstract: We study the effects of spin transfer on thermally activated dynamics of magnetic nanopillars with identical thicknesses of the magnetic layers. The symmetric nanopillars exhibit anomalous dependencies of switching statistics on magnetic field and current. We interpret our data in terms of simultaneous current-induced excitation of both layers. We also find evidence for coupling between the fluc… ▽ More We study the effects of spin transfer on thermally activated dynamics of magnetic nanopillars with identical thicknesses of the magnetic layers. The symmetric nanopillars exhibit anomalous dependencies of switching statistics on magnetic field and current. We interpret our data in terms of simultaneous current-induced excitation of both layers. We also find evidence for coupling between the fluctuations of the layers due to the spin transfer. △ Less

Submitted 11 January, 2008; originally announced January 2008.

Comments: 3 pages, 3 figures

Magnetic and chemical nonuniformity in Ga[1-x]Mn[x]As films as probed by polarized neutron and x-ray reflectometry

Authors: B. J. Kirby, J. A. Borchers, J. J. Rhyne, K. V. O'Donovan, S. G. E. te Velthuis, S. Roy, Cecilia Sanchez-Hanke, T. Wojtowicz, X. Liu, W. L. Lim, M. Dobrowolska, J. K. Furdyna

Abstract: We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates from a nonuniformity of Mn at interstitial sites, and not from local variations in Mn at Ga sites. Furthermore, we see that the depth-dependent magnetization ca… ▽ More We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates from a nonuniformity of Mn at interstitial sites, and not from local variations in Mn at Ga sites. Furthermore, we see that the depth-dependent magnetization can vary drastically among as-grown Ga[1-x]Mn[x]As films despite being deposited under seemingly similar conditions. These results imply that the depth profile of interstitial Mn is dependent not only on annealing, but is also extremely sensitive to initial growth conditions. We observe that annealing improves the magnetization by producing a surface layer that is rich in Mn and O, indicating that the interstitial Mn migrates to the surface. Finally, we expand upon our previous neutron reflectivity study of Ga[1-x]Mn[x]As, by showing how the depth profile of the chemical composition at the surface and through the film thickness is directly responsible for the complex magnetization profiles observed in both as-grown and annealed films. △ Less

Submitted 15 December, 2006; v1 submitted 7 February, 2006; originally announced February 2006.

Comments: Now Published in Physical Review B

Journal ref: Physical Review B, 74, 245304 (2006)

Perpendicular magnetization reversal, magnetic anisotropy, multi-step spin switching, and domain nucleation and expansion in Ga1-xMnxAs films

Authors: X. Liu, W. L. Lim, L. V. Titova, M. Dobrowolska, J. K. Furdyna, M. Kutrowski, T. Wojtowicz

Abstract: We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of a… ▽ More We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of anisotropy in the magnetic reversal process. As a first step we have systematically mapped out the angular dependence of ferromagnetic resonance in thin Ga1-xMnxAs layers, which is a highly effective tool for obtaining the magnetic anisotropy parameters of the material. The process of perpendicular magnetization reversal was then studied by magneto-transport (i.e., Hall effect and planar Hall effect measurements). These measurements enable us to observe coherent spin rotation and non-coherent spin switching between the (100) and (010) planes. A model is proposed to explain the observed multi-step spin switching. The agreement of the model with experiment indicates that it can be reliably used for determining magnetic anisotropy parameters from magneto-transport data. An interesting characteristic of perpendicular magnetization reversal in Ga1-xMnxAs with low x is the appearance of a double hysteresis loops in the magnetization data. This double-loop behavior can be understood by generalizing the proposed model to include the processes of domain nucleation and expansion. △ Less

Submitted 12 May, 2005; originally announced May 2005.

Optical studies of carrier and phonon dynamics in Ga_{1-x}Mn_{x}As

Authors: K. J. Yee, D. Lee, X. Liu, W. L. Lim, M. Dobrowolska, J. K. Furdyna, Y. S. Lim, K. G. Yee, D. S. Kim

Abstract: We present a time-resolved optical study of the dynamics of carriers and phonons in Ga_{1-x}Mn_{x}As layers for a series of Mn and hole concentrations. While band filling is the dominant effect in transient optical absorption in low-temperature-grown (LT) GaAs, band gap renormalization effects become important with increasing Mn concentration in Ga_{1-x}Mn_{x}As, as inferred from the sign of the… ▽ More We present a time-resolved optical study of the dynamics of carriers and phonons in Ga_{1-x}Mn_{x}As layers for a series of Mn and hole concentrations. While band filling is the dominant effect in transient optical absorption in low-temperature-grown (LT) GaAs, band gap renormalization effects become important with increasing Mn concentration in Ga_{1-x}Mn_{x}As, as inferred from the sign of the absorption change. We also report direct observation on lattice vibrations in Ga1-xMnxAs layers via reflective electro-optic sampling technique. The data show increasingly fast dephasing of LO phonon oscillations for samples with increasing Mn and hole concentration, which can be understood in term of phonon scattering by the holes. △ Less

Submitted 2 May, 2005; v1 submitted 13 April, 2005; originally announced April 2005.

Comments: 13 pages, 3 figures replaced Fig.1 after finding a mistake in previous version

Ferromagnetic resonance study of free hole contribution to magnetization and magnetic anisotropy in modulation-doped Ga$_{1 - x}$Mn$_{x}$As/Ga$_{1 - y}$Al$_{y}$As:Be

Authors: X. Liu, W. L. Lim, M. Dobrowolska, J. K. Furdyna, T. Wojtowicz

Abstract: Ferromagnetic resonance (FMR) is used to study magnetic anisotropy of GaMnAs in a series of Ga$_{1 - x}$Mn$_{x}$As/Ga$_{1 - y}$Al$_{y}$As heterostructures modulation-doped by Be. The FMR experiments provide a direct measure of cubic and uniaxial magnetic anisotropy fields, and their dependence on the doping level. It is found that the increase in doping -- in addition to rising the Curie tempera… ▽ More Ferromagnetic resonance (FMR) is used to study magnetic anisotropy of GaMnAs in a series of Ga$_{1 - x}$Mn$_{x}$As/Ga$_{1 - y}$Al$_{y}$As heterostructures modulation-doped by Be. The FMR experiments provide a direct measure of cubic and uniaxial magnetic anisotropy fields, and their dependence on the doping level. It is found that the increase in doping -- in addition to rising the Curie temperature of the Ga$_{1 - x}$Mn$_{x}$As layers -- also leads to a very significant increase of their uniaxial anisotropy field. The FMR measurements further show that the effective $g$-factor of Ga$_{1 - x}$Mn$_{x}$As is also strongly affected by the doping. This in turn provides a direct measure of the contribution from the free hole magnetization to the magnetization of Ga$_{1 - x}$Mn$_{x}$As system as a whole. △ Less

Submitted 14 July, 2004; originally announced July 2004.

Comments: 11 pages, 4 figures

Measurement of Spin Polarization by Andreev Reflection in Ferromagnetic In1-xMnxSb Epilayers

Authors: R. P. Panguluri, B. Nadgorny, T. Wojtowicz, W. L. Lim, X. Liu, J. K. Furdyna

Abstract: We carried out Point Contact Andreev Reflection (PCAR) spin spectroscopy measurements on epitaxially-grown ferromagnetic In1-xMnxSb epilayers with a Curie temperature of ~9K. The spin sensitivity of PCAR in this material was demonstrated by parallel control studies on its non-magnetic analog, In1-yBeySb. We found the conductance curves of the Sn point contacts with In1-yBeySb to be fairly conven… ▽ More We carried out Point Contact Andreev Reflection (PCAR) spin spectroscopy measurements on epitaxially-grown ferromagnetic In1-xMnxSb epilayers with a Curie temperature of ~9K. The spin sensitivity of PCAR in this material was demonstrated by parallel control studies on its non-magnetic analog, In1-yBeySb. We found the conductance curves of the Sn point contacts with In1-yBeySb to be fairly conventional, with the possible presence of proximity-induced superconductivity effects at the lowest temperatures. The experimental Z-values of interfacial scattering agreed well with the estimates based on the Fermi velocity mismatch between the semiconductor and the superconductor. These measurements provided control data for subsequent PCAR measurements on ferromagnetic In1-xMnxSb, which indicated spin polarization in In1-xMnxSb to be 52 +- 3%. △ Less

Submitted 17 March, 2004; originally announced March 2004.

Annealing-Dependent Magnetic Depth Profile in Ga[1-x]Mn[x]As

Authors: B. J. Kirby, J. A. Borchers, J. J. Rhyne, S. G. E. te Velthuis, A. Hoffmann, K. V. O'Donovan, T. Wojtowicz, X. Liu, W. L. Lim, J. K. Furdyna

Abstract: We have studied the depth-dependent magnetic and structural properties of as-grown and optimally annealed Ga[1-x]Mn[x]As films using polarized neutron reflectometry. In addition to increasing total magnetization, the annealing process was observed to produce a significantly more homogeneous distribution of the magnetization. This difference in the films is attributed to the redistribution of Mn… ▽ More We have studied the depth-dependent magnetic and structural properties of as-grown and optimally annealed Ga[1-x]Mn[x]As films using polarized neutron reflectometry. In addition to increasing total magnetization, the annealing process was observed to produce a significantly more homogeneous distribution of the magnetization. This difference in the films is attributed to the redistribution of Mn at interstitial sites during the annealing process. Also, we have seen evidence of significant magnetization depletion at the surface of both as-grown and annealed films. △ Less

Submitted 4 January, 2004; v1 submitted 5 November, 2003; originally announced November 2003.

Comments: 5 pages, 3 figures

External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures

Authors: X. Liu, W. L. Lim, L. V. Titova, T. Wojtowicz, M. Kutrowski, K. J. Yee, M. Dobrowolska, J. K. Furdyna, S. J. Potashnik, M. B. Stone, P. Schiffer, I. Vurgaftman, J. R. Meyer

Abstract: In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperat… ▽ More In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates to the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations. △ Less

Submitted 28 August, 2003; originally announced August 2003.

Comments: 11 pages, 3 figures, submitted to NGS-11

Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys

Authors: T. Wojtowicz, W. L. Lim, X. Liu, G. Cywinski, M. Kutrowski, L. V. Titova, K. Yee, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, G. B. Kim, M. Cheon, X. Chen, S. M. Wang, H. Luo, I. Vurgaftman, J. R. Meyer

Abstract: We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system… ▽ More We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method. △ Less

Submitted 1 July, 2003; originally announced July 2003.

Comments: Invited talk at 11th International Conference on Narrow Gap Semiconductors, Buffalo, New York, U.S.A., June 16 - 20, 2003

Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping

Authors: T. Wojtowicz, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, I. Vurgaftman, J. R. Meyer

Abstract: The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitat… ▽ More The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth. △ Less

Submitted 2 May, 2003; originally announced May 2003.

Comments: 12 pages, 3 figures

Fundamental Curie temperature limit in ferromagnetic GaMnAs

Authors: K. M. Yu, W. Walukiewicz, T. Wojtowicz, W. L. Lim, X. Liu, U. Bindley, M. Dobrowolska, J. K. Furdyna

Abstract: We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increas… ▽ More We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increasing Be concentration, while the free hole concentration remains relatively constant at ~5x10^20 cm^-3. These results indicate that the concentrations of free holes and ferromagnetically active Mn spins are governed by the position of the Fermi level, which controls the formation energy of compensating interstitial Mn donors. △ Less

Submitted 12 March, 2003; originally announced March 2003.

Comments: 14 pages, 3 figures

In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

Authors: T. Wojtowicz, G. Cywinski, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, G. B. Kim, M. Cheon, X. Chen, S. M. Wang, H. Luo

Abstract: A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. T… ▽ More A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism. △ Less

Submitted 11 March, 2003; originally announced March 2003.

Comments: 12 pages, 3 figures