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Defect analysis of the $β$- to $γ$-Ga$_{2}$O$_{3}$ phase transition
Authors:
Umutcan Bektas,
Maciej O. Liedke,
Huan Liu,
Fabian Ganss,
Maik Butterling,
Nico Klingner,
René Hübner,
Ilja Makkonen,
Andreas Wagner,
Gregor Hlawacek
Abstract:
In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the $β$ to the $γ$ phase, the role of defects during the transformation, and the quality of the resulting crystal structure. Using a multi-method analysis approach including X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry in channeling mod…
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In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the $β$ to the $γ$ phase, the role of defects during the transformation, and the quality of the resulting crystal structure. Using a multi-method analysis approach including X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry in channeling mode (RBS/c), Doppler broadening variable energy positron annihilation spectroscopy (DB-VEPAS) and variable energy positron annihilation lifetime spectroscopy (VEPALS) supported by density functional theory (DFT) calculations, we have characterized defects at all the relevant stages before, during, and after the phase transition. Reduction in backscattering yield was observed in RBS/c spectra after the transition to the $γ$ phase. This is corroborated by a significant decrease in the positron trapping center density due to generation of embedded vacancies intrinsic for the $γ$-Ga2O3 but too shallow in order to trap positrons. A comparison of the observed positron lifetime of $γ$-Ga2O3 with different theoretical models shows good agreement with the three-site $γ$ phase approach. A characteristic increase in the effective positron diffusion length and the positron lifetime at the transition point from $β$-Ga2O3 to $γ$-Ga2O3 enables visualization of the phase transition with positrons for the first time. Moreover, a subsequent reduction of these quantities with increasing irradiation fluence was observed, which we attribute to further evolution of the $γ$-Ga2O3 and changes in the gallium vacancy density as well as relative occupation in the crystal lattice.
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Submitted 6 May, 2025;
originally announced May 2025.
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Charge-transfer-mediated boron magneto-ionics: Towards voltage-driven multi-ion transport
Authors:
Zheng Ma,
Karim-Alexandros Kantre,
Huan Tan,
Maciej O. Liedke,
Javier Herrero-Martín,
Eric Hirschmann,
Andreas Wagner,
Alberto Quintana,
Eva Pellicer,
Josep Nogués,
Johan Meersschaut,
Jordi Sort,
Enric Menéndez
Abstract:
Voltage control of magnetism via magneto-ionics, where ion transport and/or redox processes drive magnetic modulation, holds great promise for next-generation memories and computing. This stems from its non-volatility and ability to precisely tune both the magnitude and speed of magnetic properties in an energy-efficient manner. However, expanding magneto-ionics to incorporate novel mobile ions or…
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Voltage control of magnetism via magneto-ionics, where ion transport and/or redox processes drive magnetic modulation, holds great promise for next-generation memories and computing. This stems from its non-volatility and ability to precisely tune both the magnitude and speed of magnetic properties in an energy-efficient manner. However, expanding magneto-ionics to incorporate novel mobile ions or even multiple ion species is crucial for unlocking new phenomena and enabling multifunctional capabilities. Here, we demonstrate voltage-driven multi-ion transport in a FeBO system with increasing oxygen content, progressively transitioning from an electrostatic-like response to a more pronounced electrochemical (magneto-ionic) behavior. The voltage-driven transport of both B and Fe is activated by oxidation state tuning, owing to the larger electronegativity of oxygen. Such charge-transfer effects allow multi-ion magneto-ionics, where O ions move oppositely to Fe and B ions. These results pave the way for programmable functionalities by leveraging elements with different electron affinities through charge-transfer engineering.
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Submitted 14 March, 2025;
originally announced March 2025.
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Carbon magneto-ionics: Control of magnetism through voltage-driven carbon transport
Authors:
Zhengwei Tan,
Zheng Ma,
Simone Privitera,
Maciej Oskar Liedke,
Eric Hirschmann,
Andreas Wagner,
José L. Costa-Krämer,
Alberto Quintana,
Aina Garcia-Tort,
Javier Herrero-Martín,
Huan Tan,
Ignasi Fina,
Florencio Sánchez,
Aitor F. Lopeandia,
Josep Nogués,
Eva Pellicer,
Jordi Sort,
Enric Menéndez
Abstract:
Control of magnetism through voltage-driven ionic processes (i.e., magneto-ionics) holds potential for next-generation memories and computing. This stems from its non-volatility, flexibility in adjusting the magnitude and speed of magnetic modulation, and energy efficiency. Since magneto-ionics depends on factors like ionic radius and electronegativity, identifying alternative mobile ions is cruci…
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Control of magnetism through voltage-driven ionic processes (i.e., magneto-ionics) holds potential for next-generation memories and computing. This stems from its non-volatility, flexibility in adjusting the magnitude and speed of magnetic modulation, and energy efficiency. Since magneto-ionics depends on factors like ionic radius and electronegativity, identifying alternative mobile ions is crucial to embrace new phenomena and applications. Here, the feasibility of C as a prospective magneto-ionic ion is investigated in a Fe-C system by electrolyte gating. In contrast to most magneto-ionic systems, Fe-C presents a dual-ion mechanism: Fe and C act as cation and anion, respectively, moving uniformly in opposite directions under an applied electric field. This leads to a 7-fold increase in saturation magnetization with magneto-ionic rates larger than 1 emu cm-3 s-1, and a 25-fold increase in coercivity. Since carbides exhibit minimal cytotoxicity, this introduces a biocompatible dimension to magneto-ionics, paving the way for the convergence of spintronics and biotechnology.
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Submitted 14 March, 2025;
originally announced March 2025.
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Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Authors:
Christoph Wilflingseder,
Johannes Aberl,
Enrique Prado Navarette,
Günter Hesser,
Heiko Groiss,
Maciej O. Liedke,
Maik Butterling,
Andreas Wagner,
Eric Hirschmann,
Cedric Corley-Wiciak,
Marvin H. Zoellner,
Giovanni Capellini,
Thomas Fromherz,
Moritz Brehm
Abstract:
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultra-low growth temperatures (…
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Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultra-low growth temperatures ($T_{Ge} = 100^{\circ}\mathrm{C}-350^{\circ}\mathrm{C}$) and pristine growth pressures ($\lesssim 10^{-10}\,\mathrm{mbar}$). First, we show that $T_{Ge}$ does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage ($θ_{Ge}$, 1, 2, 4, 8, 12, and 16 nm) and $T_{Ge}$ ($100^{\circ}\mathrm{C}$ to $300^{\circ}\mathrm{C}$, in increments of $50^{\circ}\mathrm{C}$) to assess the influence of these parameters on the layer's structural quality. Atomic force microscopy revealed a rippled surface topography with superimposed grainy features and the absence of three-dimensional structures, such as quantum dots. Transmission electron microscopy unveiled pseudomorphic, grains of highly crystalline growth separated by defective domains. Thanks to nanobeam scanning x-ray diffraction measurements, we were able to evidence the lattice strain fluctuations due to the ripple-like structure of the layers. We conclude that the heteroepitaxial strain contributes to the formation of the ripples, which originate from the kinetic limitations of the ultra-low temperatures.
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Submitted 4 October, 2024;
originally announced October 2024.
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Insights into the LiMn2O4 Cathode Stability in Aqueous Electrolyte
Authors:
Juan Carlos Gonzalez-Rosillo,
Maxim Guc,
Maciej Oskar Liedke,
Maik Butterling,
Ahmed G. Attallah,
Eric Hirschmann,
Andreas Wagner,
Victor Izquierdo-Roca,
Federico Baiutti,
Alex Morata,
Albert Tarancon
Abstract:
LiMn2O4 (LMO), cathodes present large stability when cycled in aqueous electrolytes, contrasting its behavior in conventional organic electrolytes in Lithium-ion batteries (LIBs). To elucidate the mechanisms underlying this distinctive behavior, we employ unconventional characterization techniques, including Variable Energy Positron Annihilation Lifetime Spectroscopy (VEPALS), Tip-Enhanced Raman S…
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LiMn2O4 (LMO), cathodes present large stability when cycled in aqueous electrolytes, contrasting its behavior in conventional organic electrolytes in Lithium-ion batteries (LIBs). To elucidate the mechanisms underlying this distinctive behavior, we employ unconventional characterization techniques, including Variable Energy Positron Annihilation Lifetime Spectroscopy (VEPALS), Tip-Enhanced Raman Spectroscopy (TERS) and macro-Raman Spectroscopy (with mm-size laser spot). These still rather unexplored techniques in the battery field provide complementary information across different length scales, revealing previously hidden features.
VEPALS offers atomic-scale insights, uncovering cationic defects and sub-nanometer pores that tend to collapse with cycling. TERS, operating at the nanometric range at the surface, captured the presence of Mn3O4 and its dissolution with cycling, elucidating dynamic changes during operation. Additionally, TERS highlights SO42- accumulation at grain boundaries. Macro-Raman Spectroscopy focuses on the micrometer scale, depicting small changes in the cathode's long-range order, suggesting a slow but progressive loss of crystalline quality under operation.
Integrating these techniques provides a comprehensive assessment of LMO cathode stability in aqueous electrolytes, offering multifaceted insights into phase and defect evolution that can help to rationalize the origin of such stability when compared to conventional organic electrolytes. Our findings advance the understanding of LMO behavior in aqueous environments and provide guidelines for its development for next-generation LIBs.
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Submitted 19 December, 2023;
originally announced December 2023.
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Ion Intercalation in Lanthanum Strontium Ferrite for Aqueous Electrochemical Energy Storage Devices
Authors:
Yunqing Tang,
Francesco Chiabrera,
Alex Morata,
Andrea Cavallaro,
Maciej O. Liedke,
Hemesh Avireddy,
Mar Maller,
Maik Butterling,
Andreas Wagner,
Michel Stchakovsky,
Federico Baiutti,
Ainara Aguadero,
Albert Tarancón
Abstract:
Ion intercalation of perovskite oxides in liquid electrolytes is a very promising method for controlling their functional properties while storing charge, which opens the potential application in different energy and information technologies. Although the role of defect chemistry in the oxygen intercalation in a gaseous environment is well established, the mechanism of ion intercalation in liquid…
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Ion intercalation of perovskite oxides in liquid electrolytes is a very promising method for controlling their functional properties while storing charge, which opens the potential application in different energy and information technologies. Although the role of defect chemistry in the oxygen intercalation in a gaseous environment is well established, the mechanism of ion intercalation in liquid electrolytes at room temperature is poorly understood. In this study, the defect chemistry during ion intercalation of La0.5Sr0.5FeO3-δ thin films in alkaline electrolytes is studied. Oxygen and proton intercalation into the LSF perovskite structure is observed at moderate electrochemical potentials (0.5 V to -0.4 V), giving rise to a change in the oxidation state of Fe (as a charge compensation mechanism). The variation of the concentration of holes as a function of the intercalation potential was characterized by in-situ ellipsometry and the concentration of electron holes was indirectly quantified for different electrochemical potentials. Finally, a dilute defect chemistry model that describes the variation of defect species during ionic intercalation was developed.
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Submitted 19 June, 2023;
originally announced June 2023.
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Detection of light emission produced in the process of positronium formation
Authors:
M. Pietrow,
R. Zaleski,
A. Wagner,
P. Slomski,
E. Hirschmann,
R. Krause-Rehberg,
M. O. Liedke,
M. Butterling,
D. Weinberger
Abstract:
The excess energy emitted during the positronium (Ps) formation in condensed matter may be released as light. Spectroscopic analysis of this light can be a new method of studying the electronic properties of materials. We report the first experimental attempt, according to our knowledge, to verify the existence of this emission process. As a result, the possibility of the emission of photons durin…
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The excess energy emitted during the positronium (Ps) formation in condensed matter may be released as light. Spectroscopic analysis of this light can be a new method of studying the electronic properties of materials. We report the first experimental attempt, according to our knowledge, to verify the existence of this emission process. As a result, the possibility of the emission of photons during Ps formation is within the experimental uncertainty in two different solids: an n-alkane and porous silica. However, it seems that the Ps formation on the alkane surface is not accompanied by the emission of photons with energy in the detection range of 1.6 - 3.9 eV. Various processes that can influence the energy of the photon emitted during the Ps formation are discussed to elucidate this issue. To aid future experiments, equations were developed to estimate the expected ratio of light emission events to annihilation events with the presence or absence of a photon during the Ps formation.
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Submitted 7 December, 2020;
originally announced December 2020.
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Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Authors:
Slawomir Prucnal,
Maciej O. Liedke,
Xiaoshuang Wang,
Maik Butterling,
Matthias Posselt,
Joachim Knoch,
Horst Windgassen,
Eric Hirschmann,
Yonder Berencén,
Lars Rebohle,
Mao Wang,
Enrico Napoltani,
Jacopo Frigerio,
Andrea Ballabio,
Giovani Isella,
René Hübner,
Andreas Wagner,
Hartmut Bracht,
Manfred Helm,
Shengqiang Zhou
Abstract:
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concen…
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The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
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Submitted 28 October, 2020;
originally announced October 2020.
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Mapping the Structure of Oxygen-Doped Wurtzite Aluminum Nitride Coatings From Ab Initio Random Structure Search and Experiments
Authors:
Piero Gasparotto,
Maria Fischer,
Daniele Scopece,
Maciej Oskar Liedke,
Maik Butterling,
Andreas Wagner,
Oguz Yildirim,
Mathis Trant,
Daniele Passerone,
Hans J. Hug,
Carlo Antonio Pignedoli
Abstract:
Machine learning is changing how we design and interpret experiments in materials science. In this work, we show how unsupervised learning, combined with ab initio modeling, improves our understanding of structural metastability in multicomponent alloys. We use the example case of Al-O-N alloys where the formation of aluminum vacancies in wurtzite AlN upon the incorporation of substitutional oxyge…
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Machine learning is changing how we design and interpret experiments in materials science. In this work, we show how unsupervised learning, combined with ab initio modeling, improves our understanding of structural metastability in multicomponent alloys. We use the example case of Al-O-N alloys where the formation of aluminum vacancies in wurtzite AlN upon the incorporation of substitutional oxygen can be seen as a general mechanism of solids where crystal symmetry is reduced to stabilize defects. The ideal AlN wurtzite crystal structure occupation cannot be matched due to the presence of an aliovalent hetero-element into the structure. The traditional interpretation of the c-lattice shrinkage in sputter-deposited Al-O-N films from X-ray diffraction (XRD) experiments suggests the existence of a solubility limit at 8at.% oxygen content. Here we show that such naive interpretation is misleading. We support XRD data with a machine learning analysis of ab initio simulations and positron annihilation lifetime spectroscopy data, revealing no signs of a possible solubility limit. Instead, the presence of a wide range of non-equilibrium oxygen-rich defective structures emerging at increasing oxygen contents suggests that the formation of grain boundaries is the most plausible mechanism responsible for the lattice shrinkage measured in Al-O-N sputtered films.
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Submitted 12 January, 2021; v1 submitted 28 September, 2020;
originally announced September 2020.
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Vacancy-Hydrogen Interaction in Niobium during Low-Temperature Baking
Authors:
Marc Wenskat,
Jakub Cizek,
Maciej Oskar Liedke,
Maik Butterling,
Christopher Bate,
Peter Hausild,
Eric Hirschmann,
Andreas Wagner,
Hans Weise
Abstract:
A recently discovered modified low-temperature baking leads to reduced surface losses and an increase of the accelerating gradient of superconducting TESLA shape cavities. We will show that the dynamics of vacancy-hydrogen complexes at low-temperature baking lead to a suppression of lossy nanohydrides at 2\,K and thus a significant enhancement of accelerator performance. Utilizing Doppler broadeni…
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A recently discovered modified low-temperature baking leads to reduced surface losses and an increase of the accelerating gradient of superconducting TESLA shape cavities. We will show that the dynamics of vacancy-hydrogen complexes at low-temperature baking lead to a suppression of lossy nanohydrides at 2\,K and thus a significant enhancement of accelerator performance. Utilizing Doppler broadening Positron Annihilation Spectroscopy, Positron Annihilation Lifetime Spectroscopy and instrumented nanoindentation, samples made from European XFEL niobium sheets were investigated. We studied the evolution of vacancies in bulk samples and in the sub-surface region and their interaction with hydrogen at different temperature levels during {\it in-situ} and {\it ex-situ} annealing.
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Submitted 28 April, 2020;
originally announced April 2020.
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Nitrogen magneto-ionics
Authors:
Julius de Rojas,
Alberto Quintana,
Aitor Lopeandía,
Joaquín Salguero,
Beatriz Muñiz,
Fatima Ibrahim,
Mairbek Chshiev,
Maciej O. Liedke,
Maik Butterling,
Andreas Wagner,
Veronica Sireus,
Llibertat Abad,
Christopher J. Jensen,
Kai Liu,
Josep Nogués,
José L. Costa-Krämer,
Enric Menéndez,
Jordi Sort
Abstract:
So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient, room-temperature, voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a single CoN film (without an ion-reservoir layer). Nitro…
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So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient, room-temperature, voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a single CoN film (without an ion-reservoir layer). Nitrogen magneto-ionics in CoN is compared to oxygen magneto-ionics in Co3O4, both layers showing a nanocrystalline face-centered-cubic structure and reversible voltage-driven ON-OFF ferromagnetism. In contrast to oxygen, nitrogen transport occurs uniformly creating a plane-wave-like migration front, without assistance of diffusion channels. Nitrogen magneto-ionics requires lower threshold voltages and exhibits enhanced rates and cyclability. This is due to the lower activation energy for ion diffusion and the lower electronegativity of nitrogen compared to oxygen. These results are appealing for the use of magneto-ionics in nitride semiconductor devices, in applications requiring endurance and moderate speeds of operation, such as brain-inspired computing.
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Submitted 24 March, 2020;
originally announced March 2020.
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Light-driven permanent transition from insulator to conductor in Ga2O3
Authors:
F. A. Selim,
D. Rana,
S. Agarwal,
M. Islam,
A. Banerjee,
B. P. Uberuaga,
P. Saadatkia,
P. Dulal,
N. Adhikari,
M. Butterling,
M. O. Liedke,
A. Wagner
Abstract:
The transition from insulator to conductor can be achieved in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by doping. Here we reveal a mechanism the lattice may adopt to induce such a transition. We show that limited exposure to sub-bandgap light caused a permanent transition from an insulator state to a condu…
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The transition from insulator to conductor can be achieved in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by doping. Here we reveal a mechanism the lattice may adopt to induce such a transition. We show that limited exposure to sub-bandgap light caused a permanent transition from an insulator state to a conductor state in the insulating oxide Ga2O3 with 9-orders of magnitude increase in electronic conduction. Photoexcitation modifies the charge state of an O-vacancy and the redistribution of the localized electrons, leading to a massive structural distortion in the lattice that is shown to be the underlying mechanism. It modifies density of states and introduces new stable states with shallower energy levels, leading to this intriguing behavior. We suggest that this mechanism may occur in other wide bandgap metal oxides leading to drastic modification in their electronic properties.
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Submitted 22 March, 2020;
originally announced March 2020.
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Boosting room temperature magneto-ionics in Co3O4
Authors:
Julius de Rojas,
Alberto Quintana,
Aitor Lopeandía,
Joaquín Salguero,
José L. Costa-Krämer,
Llibertat Abad,
Maciej O. Liedke,
Maik Butterling,
Andreas Wagner,
Lowie Henderick,
Jolien Dendooven,
Christophe Detavernier,
Jordi Sort,
Enric Menéndez
Abstract:
Voltage control of magnetism through electric field-induced oxygen motion (magneto-ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in a large variety of magnetic devices, such as magnetic micro-electro-mechanical systems (MEMS), magnetic logics, spin electronics, or neuromorphic computing, i.e., envisaging ultra-low power emulation…
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Voltage control of magnetism through electric field-induced oxygen motion (magneto-ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in a large variety of magnetic devices, such as magnetic micro-electro-mechanical systems (MEMS), magnetic logics, spin electronics, or neuromorphic computing, i.e., envisaging ultra-low power emulation of the biological synapse. Boosting the induced changes in magnetization, magneto-ionic motion and cyclability (endurance) continue to be key challenges to turn magneto-ionic phenomena into real applications. Here, we demonstrate that, without degrading cyclability, room temperature magneto-ionic motion in electrolyte-gated paramagnetic and fairly thick (> 100 nm) Co3O4 films largely depends on the configuration used to apply the electric field. In particular, magneto-ionic effects are significantly increased both in terms of generated magnetization (6 times larger: from 118.5 to 699.2 emu cm-3) and speed (35 times faster: from 33.1 to 1170.8 emu cm-3 h-1) if the electric field is applied across a conducting buffer layer (grown underneath the Co3O4 films), instead of directly contacting Co3O4. This is attributed to a greater uniformity and strength of the applied electric field when using the conducting layer. These results may trigger the use of oxygen magneto-ionics into promising new technologies, such as magnetic MEMS or brain-inspired computing, which require endurance and moderate speeds of operation.
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Submitted 22 January, 2020;
originally announced January 2020.
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Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3
Authors:
Md Minhazul Islam,
Maciej Oskar Liedke,
David Winarski,
Maik Butterling,
Andreas Wagner,
Peter Hosemann,
Yongqiang Wang,
Blas Uberuaga,
Farida A. Selim
Abstract:
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in beta-Ga2O3, an ultra-wide band…
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Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in beta-Ga2O3, an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping. Hydrogen induced a 9-order of magnitude increase of n-type conductivity with donor ionization energy of 20 meV and resistivity of 10-4 Ohm.cm. The conductivity was switched to p-type with acceptor ionization energy of 42 meV by altering hydrogen incorporation in the lattice. Density functional theory calculations were used to examine hydrogen location in the Ga2O3 lattice and identified a new donor type as the source of this remarkable n-type conductivity. Positron annihilation spectroscopy confirmed this finding and the interpretation of the results. This work illustrates a new approach that allows a tunable and reversible way of modifying the conductivity of semiconductors and it is expected to have profound implications on semiconductor field. At the same time it demonstrates for the first time p-type and remarkable n-type conductivity in Ga2O3 which should usher in the development of Ga2O3 devices and advance optoelectronics and high-power devices
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Submitted 6 November, 2019;
originally announced November 2019.
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Vacancy complexes in nonequilibrium germanium-tin semiconductors
Authors:
Simone Assali,
Mohamed Elsayed,
Jérôme Nicolas,
Maciej Oskar Liedke,
Andreas Wagner,
Maik Butterling,
Reinhard Krause-Rehberg,
Oussama Moutanabbir
Abstract:
Understanding the nature and behavior of vacancy-like defects in epitaxial GeSn metastable alloys is crucial to elucidate the structural and optoelectronic properties of these emerging semiconductors. The formation of vacancies and their complexes is expected to be promoted by the relatively low substrate temperature required for the epitaxial growth of GeSn layers with Sn contents significantly a…
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Understanding the nature and behavior of vacancy-like defects in epitaxial GeSn metastable alloys is crucial to elucidate the structural and optoelectronic properties of these emerging semiconductors. The formation of vacancies and their complexes is expected to be promoted by the relatively low substrate temperature required for the epitaxial growth of GeSn layers with Sn contents significantly above the equilibrium solubility of 1 at.%. These defects can impact both the microstructure and charge carrier lifetime. Herein, to identify the vacancy-related complexes and probe their evolution as a function of Sn content, depth-profiled pulsed low-energy positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy were combined to investigate GeSn epitaxial layers with Sn content in the 6.5-13.0 at.% range. The samples were grown by chemical vapor deposition method at temperatures between 300 and 330 °C. Regardless of the Sn content, all GeSn samples showed the same depth-dependent increase in the positron annihilation line broadening parameters, which confirmed the presence of open volume defects. The measured average positron lifetimes were the highest (380-395 ps) in the region near the surface and monotonically decrease across the analyzed thickness, but remain above 350 ps. All GeSn layers exhibit lifetimes that are 85 to 110 ps higher than the Ge reference layers. Surprisingly, these lifetimes were found to decrease as Sn content increases in GeSn layers. These measurements indicate that divacancies are the dominant defect in the as-grown GeSn layers. However, their corresponding lifetime was found to be shorter than in epitaxial Ge thus suggesting that the presence of Sn may alter the structure of divacancies. Additionally, GeSn layers were found to also contain a small fraction of vacancy clusters, which become less important as Sn content increases.
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Submitted 22 April, 2019;
originally announced April 2019.
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Purely Antiferromagnetic Magnetoelectric Random Access Memory
Authors:
Tobias Kosub,
Martin Kopte,
Ruben Hühne,
Patrick Appel,
Brendan Shields,
Patrick Maletinsky,
René Hübner,
Maciej Oskar Liedke,
Jürgen Fassbender,
Oliver G. Schmidt,
Denys Makarov
Abstract:
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and ex…
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Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes of these novel systems, we construct a comprehensive model of the magnetoelectric selection mechanism in thin films of magnetoelectric antiferromagnets. We identify that growth induced effects lead to emergent ferrimagnetism, which is detrimental to the robustness of the storage. After pinpointing lattice misfit as the likely origin, we provide routes to enhance or mitigate this emergent ferrimagnetism as desired. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in purely antiferromagnetic spintronics devices.
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Submitted 21 November, 2016;
originally announced November 2016.
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InP nanocrystals on silicon for optoelectronic applications
Authors:
Slawomir Prucnal,
Shengqiang Zhou,
Xin Ou,
Helfried Reuther,
Maciej Oskar Liedke,
Arndt Mücklich,
Manfred Helm,
Jerzy Zuk,
Marcin Turek,
Krzysztof Pyszniak,
Wolfgang Skorupa
Abstract:
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct ba…
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One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct band gap III-V compound semiconductor material. In the paper we present the synthesis of single crystalline InP nanodots (NDs) on silicon using combined ion implantation and millisecond flash lamp annealing techniques. The optical and microstructural investigations reveal the growth of high-quality (100)-oriented InP nanocrystals. The current-voltage measurements confirm the formation of an n-p heterojunction between the InP NDs and silicon. The main advantage of our method is its integration with large-scale silicon technology, which allows applying it for Si-based optoelectronic devices.
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Submitted 11 November, 2012;
originally announced November 2012.
