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Muonium state exchange dynamics in n-type Gallium Arsenide
Authors:
K. Yokoyama,
J. S. Lord,
P. W. Mengyan,
M. R. Goeks,
R. L. Lichti
Abstract:
Muonium (Mu), a pseudo-isotope atom of hydrogen with a positively charged muon at the place of the proton, can form in a wide range of semiconductor materials. They can appear in different states, depending on their charge state and microscopic site within a crystal lattice. After the Mu formation, they undergo interactions with free charge carriers, electronic spins, and other Mu sites, and form…
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Muonium (Mu), a pseudo-isotope atom of hydrogen with a positively charged muon at the place of the proton, can form in a wide range of semiconductor materials. They can appear in different states, depending on their charge state and microscopic site within a crystal lattice. After the Mu formation, they undergo interactions with free charge carriers, electronic spins, and other Mu sites, and form a dynamic network of state exchange. We identified the model of Mu dynamics in n-type Gallium Arsenide using the density matrix simulation and photoexcited muon spin spectroscopy technique. Fitting to the dark and illuminated $μ$SR data provided transition rates between Mu states, which in turn showed the underlying mechanism of the $μ$SR time spectra. Deduced capture/scattering cross sections of the Mu states reflected the microscopic dynamics of Mu. Illumination studies enable us to measure interactions between Mu and generated minority carriers, which are unavailable in dark measurements. The methodology we developed in this study can be applied to other semiconductor systems for a deeper microscopic understanding of the Mu state exchange dynamics.
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Submitted 9 May, 2023;
originally announced May 2023.
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Muon probes of temperature-dependent charge carrier kinetics in semiconductors
Authors:
K. Yokoyama,
J. S. Lord,
P. W. Mengyan,
M. R. Goeks,
R. L. Lichti
Abstract:
We have applied the photoexcited muon spin spectroscopy technique (photo-$μ$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. The obtained carrier lifetime spectrum can be modeled w…
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We have applied the photoexcited muon spin spectroscopy technique (photo-$μ$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. The obtained carrier lifetime spectrum can be modeled with a simple diffusion equation to determine bulk recombination lifetime and carrier mobility. Temperature dependent studies of these parameters can reveal the recombination and diffusion mechanism.
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Submitted 18 June, 2019;
originally announced June 2019.
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Bound Magnetic Polarons in the 3d-electron Ferromagnetic Spinel Semiconductor CdCr$_2$Se$_4$
Authors:
Vyacheslav G. Storchak,
Jess H. Brewer,
Peter L. Russo,
Scott L. Stubbs,
Oleg E. Parfenov,
Roger L. Lichti,
Tel'man G. Aminov
Abstract:
Muon spin rotation/relaxation spectroscopy %(supported by magnetization measurements) has been employed to study electron localization around a donor center - the positive muon - in the 3d magnetic spinel semiconductor CdCr$_2$Se$_4$ at temperatures from 2 to 300 K in magnetic fields up to 7 T. A bound state of an electron around a positive muon - a magnetic polaron - is detected far above the fe…
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Muon spin rotation/relaxation spectroscopy %(supported by magnetization measurements) has been employed to study electron localization around a donor center - the positive muon - in the 3d magnetic spinel semiconductor CdCr$_2$Se$_4$ at temperatures from 2 to 300 K in magnetic fields up to 7 T. A bound state of an electron around a positive muon - a magnetic polaron - is detected far above the ferromagnetic transition up to 300 K. Electron localization into a magnetic polaron occurs due to its strong exchange interaction with the magnetic 3d electrons of local Cr$^{3+}$ ions, which confines its wave function within R\approx 0.3 nm, allowing significant overlap with both the nearest and next nearest shells of Cr ions.
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Submitted 9 March, 2010;
originally announced March 2010.
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Muonium as a shallow center in GaN
Authors:
K. Shimomura,
R. Kadono,
K. Ohishi,
M. Mizuta,
M. Saito,
K. H. Chow,
B. Hitti,
R. L. Lichti
Abstract:
A paramagnetic muonium (Mu) state with an extremely small hyperfine parameter was observed for the first time in single-crystalline GaN below 25 K. It has a highly anisotropic hyperfine structure with axial symmetry along the [0001] direction, suggesting that it is located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the c-axis. Its small ionization energy (=< 14…
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A paramagnetic muonium (Mu) state with an extremely small hyperfine parameter was observed for the first time in single-crystalline GaN below 25 K. It has a highly anisotropic hyperfine structure with axial symmetry along the [0001] direction, suggesting that it is located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the c-axis. Its small ionization energy (=< 14 meV) and small hyperfine parameter (--10^{-4} times the vacuum value) indicate that muonium in one of its possible sites produces a shallow state, raising the possibility that the analogous hydrogen center could be a source of n-type conductivity in as-grown GaN.
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Submitted 5 February, 2004;
originally announced February 2004.
