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Near-infrared luminescent phosphors enabled by topotactic reduction of bismuth-activated red-emitting crystals
Authors:
B. -M. Liu,
Z. -J. Yong,
Y. Zhou,
D. -D. Zhou,
L. -R. Zheng,
L. -N. Li,
H. -M. Yu,
H. -T. Sun
Abstract:
Bismuth-doped luminescent materials have gained significant attention in the past years owing to their huge potential for the applications in telecommunications, biomedicine, and displays. However, the controlled synthesis of these materials, in particular for those luminescing in the near-infrared (NIR), remains a challenging subject of continuous research effort. Herein, we show that the low-tem…
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Bismuth-doped luminescent materials have gained significant attention in the past years owing to their huge potential for the applications in telecommunications, biomedicine, and displays. However, the controlled synthesis of these materials, in particular for those luminescing in the near-infrared (NIR), remains a challenging subject of continuous research effort. Herein, we show that the low-temperature topotactic reduction by using Al metal powders as oxygen getters can be adopted as a powerful technique for the conversion of bismuth-doped red-emitting systems into NIR-emitting cousins as a result of the creation of unique crystalline networks. Thorough experimental characterization indicates that the framework oxygen of hosts can be topotactically extracted, thus producing unique metal-oxygen-metal networks in the reduced phases while preserving the crystalline structure of the precursor. We anticipate that this low-temperature topotactic reduction strategy can be applied to the development of more novel Bi-doped luminescent materials in various forms that can find a broad range of functional applications.
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Submitted 4 July, 2016;
originally announced July 2016.
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Weak localization scattering lengths in epitaxial, and CVD graphene
Authors:
A. M. R. Baker,
J. A. Alexander-Webber,
T. Altebaeumer,
T. J. B. M. Janssen,
A. Tzalenchuk,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
C. -T. Lin,
L. -J. Li,
R. J. Nicholas
Abstract:
Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L…
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Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_\varphi$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_\varphi$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity.
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Submitted 10 May, 2013;
originally announced May 2013.
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Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene
Authors:
A. M. R. Baker J. A. Alexander-Webber,
T. Altebaeumer,
S. D. McMullan,
T. J. B. M. Janssen,
A. Tzalenchuk,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
C. -T Lin,
L. -J Li,
R. J. Nicholas
Abstract:
Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, wi…
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Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples.
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Submitted 19 December, 2012;
originally announced December 2012.
