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Stress Accommodation in Nanoscale Dolan Bridges Designed for Superconducting Qubits
Authors:
Sueli Skinner-Ramos,
Matthew L. Freeman,
Douglas Pete,
Rupert M. Lewis,
Matthew Eichenfield,
C. Thomas Harris
Abstract:
Josephson junctions are the principal circuit element in numerous superconducting quantum information devices and can be readily integrated into large-scale electronics. However, device integration at the wafer scale necessarily depends on having a reliable, high-fidelity, and high-yield fabrication method for creating Josephson junctions. When creating Al/AlOx based superconducting qubits, the st…
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Josephson junctions are the principal circuit element in numerous superconducting quantum information devices and can be readily integrated into large-scale electronics. However, device integration at the wafer scale necessarily depends on having a reliable, high-fidelity, and high-yield fabrication method for creating Josephson junctions. When creating Al/AlOx based superconducting qubits, the standard Josephson junction fabrication method relies on a sub-micron suspended resist bridge, known as a Dolan bridge, which tends to be particularly fragile and can often times fracture during the resist development process, ultimately resulting in device failure. In this work, we demonstrate a unique Josephson junction lithography mask design that incorporates stress-relief channels. Our simulation results show that the addition of stress-relief channels reduces the lateral stress in the Dolan bridge by more than 70% for all the bridge geometries investigated. In practice, our novel mask design significantly increased the survivability of the bridge during device processing, resulting in 100% yield for over 100 Josephson junctions fabricated.
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Submitted 31 January, 2025;
originally announced February 2025.
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Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition
Authors:
Rongtao Lu,
Alan J. Elliot,
Logan Wille,
Bo Mao,
Siyuan Han,
Judy Z. Wu,
John Talvacchio,
Heidi M. Schulze,
Rupert M. Lewis,
Daniel J. Ewing,
H. F. Yu,
G. M. Xue,
S. P. Zhao
Abstract:
Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on a Al-wetted Nb bottom electrode and…
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Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on a Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics (IVC) of the Josephson junctions made from these trilayers confirmed the integrity of the ALD-Al2O3 barrier layer. However, the IcRN product of the junctions is much smaller than the value expected from the Ambegaokar-Baratoff formula suggesting a significant pair-breaking mechanism at the interfaces.
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Submitted 17 September, 2013;
originally announced September 2013.
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Probing the Nucleation of Al2O3 in Atomic Layer Deposition on Aluminum for Ultrathin Tunneling Barriers in Josephson Junctions
Authors:
Alan J. Elliot,
Gary Malek,
Logan Wille,
Rongtao Lu,
Siyuan Han,
Judy Z. Wu,
John Talvacchio,
Rupert M. Lewis
Abstract:
Ultrathin dielectric tunneling barriers are critical to Josephson junction (JJ) based superconducting quantum bits (qubits). However, the prevailing technique of thermally oxidizing aluminum via oxygen diffusion produces problematic defects, such as oxygen vacancies, which are believed to be a primary source of the two-level fluctuators and contribute to the decoherence of the qubits. Development…
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Ultrathin dielectric tunneling barriers are critical to Josephson junction (JJ) based superconducting quantum bits (qubits). However, the prevailing technique of thermally oxidizing aluminum via oxygen diffusion produces problematic defects, such as oxygen vacancies, which are believed to be a primary source of the two-level fluctuators and contribute to the decoherence of the qubits. Development of alternative approaches for improved tunneling barriers becomes urgent and imperative. Atomic Layer Deposition (ALD) of aluminum oxide (Al2O3) is a promising alternative to resolve the issue of oxygen vacancies in the Al2O3 tunneling barrier, and its self-limiting growth mechanism provides atomic-scale precision in tunneling barrier thickness control. A critical issue in ALD of Al2O3 on metals is the lack of hydroxyl groups on metal surface, which prevents nucleation of the trimethylaluminum (TMA). In this work, we explore modifications of the aluminum surface with water pulse exposures followed by TMA pulse exposures to assess the feasibility of ALD as a viable technique for JJ qubits. ALD Al2O3 films from 40 angstroms to 100 angstoms were grown on 1.4 angstroms to 500 angstroms of Al and were characterized with ellipsometry and atomic force microscopy. A growth rate of 1.2 angstroms/cycle was measured, and an interfacial layer (IL) was observed. Since the IL thickness depends on the availability of Al and saturated at 2 nm, choosing ultrathin Al wetting layers may lead to ultrathin ALD Al2O3 tunneling barriers.
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Submitted 13 May, 2014; v1 submitted 17 September, 2013;
originally announced September 2013.
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Multi-level Spectroscopy of Two-Level Systems Coupled to a dc SQUID Phase Qubit
Authors:
T. A. Palomaki,
S. K. Dutta,
R. M. Lewis,
A. J. Przybysz,
Hanhee Paik,
B. K. Cooper,
H. Kwon,
J. R. Anderson,
C. J. Lobb,
E. Tiesinga,
F. C. Wellstood
Abstract:
We report spectroscopic measurements of discrete two-level systems (TLSs) coupled to a dc SQUID phase qubit with a 16 μ\m2 area Al/AlOx/Al junction. Applying microwaves in the 10 GHz to 11 GHz range, we found eight avoided level crossings with splitting sizes from 10 MHz to 200 MHz and spectroscopic lifetimes from 4 ns to 160 ns. Assuming the transitions are from the ground state of the composite…
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We report spectroscopic measurements of discrete two-level systems (TLSs) coupled to a dc SQUID phase qubit with a 16 μ\m2 area Al/AlOx/Al junction. Applying microwaves in the 10 GHz to 11 GHz range, we found eight avoided level crossings with splitting sizes from 10 MHz to 200 MHz and spectroscopic lifetimes from 4 ns to 160 ns. Assuming the transitions are from the ground state of the composite system to an excited state of the qubit or an excited state of one of the TLS states, we fit the location and spectral width to get the energy levels, splitting sizes and spectroscopic coherence times of the phase qubit and TLSs. The distribution of splittings is consistent with non-interacting individual charged ions tunneling between random locations in the tunnel barrier and the distribution of lifetimes is consistent with the AlOx in the junction barrier having a frequency-independent loss tangent. To check that the charge of each TLS couples independently to the voltage across the junction, we also measured the spectrum in the 20-22 GHz range and found tilted avoided level crossings due to the second excited state of the junction and states in which both the junction and a TLS were excited.
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Submitted 20 March, 2010;
originally announced March 2010.
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Multilevel effects in the Rabi oscillations of a Josephson phase qubit
Authors:
S. K. Dutta,
Frederick W. Strauch,
R. M. Lewis,
Kaushik Mitra,
Hanhee Paik,
T. A. Palomaki,
Eite Tiesinga,
J. R. Anderson,
Alex J. Dragt,
C. J. Lobb,
F. C. Wellstood
Abstract:
We present Rabi oscillation measurements of a Nb/AlOx/Nb dc superconducting quantum interference device (SQUID) phase qubit with a 100 um^2 area junction acquired over a range of microwave drive power and frequency detuning. Given the slightly anharmonic level structure of the device, several excited states play an important role in the qubit dynamics, particularly at high power. To investigate…
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We present Rabi oscillation measurements of a Nb/AlOx/Nb dc superconducting quantum interference device (SQUID) phase qubit with a 100 um^2 area junction acquired over a range of microwave drive power and frequency detuning. Given the slightly anharmonic level structure of the device, several excited states play an important role in the qubit dynamics, particularly at high power. To investigate the effects of these levels, multiphoton Rabi oscillations were monitored by measuring the tunneling escape rate of the device to the voltage state, which is particularly sensitive to excited state population. We compare the observed oscillation frequencies with a simplified model constructed from the full phase qubit Hamiltonian and also compare time-dependent escape rate measurements with a more complete density-matrix simulation. Good quantitative agreement is found between the data and simulations, allowing us to identify a shift in resonance (analogous to the ac Stark effect), a suppression of the Rabi frequency, and leakage to the higher excited states.
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Submitted 5 December, 2009; v1 submitted 28 June, 2008;
originally announced June 2008.
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Decoherence in dc SQUID phase qubits
Authors:
Hanhee Paik,
S. K. Dutta,
R. M. Lewis,
T. A. Palomaki,
B. K. Cooper,
R. C. Ramos,
H. Xu,
A. J. Dragt,
J. R. Anderson,
C. J. Lobb,
F. C. Wellstood
Abstract:
We report measurements of Rabi oscillations and spectroscopic coherence times in an Al/AlOx/Al and three Nb/AlOx/Nb dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit a s…
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We report measurements of Rabi oscillations and spectroscopic coherence times in an Al/AlOx/Al and three Nb/AlOx/Nb dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit a spectroscopic coherence time T2* varied from 3 to 7 ns and the decay envelope of Rabi oscillations had a time constant T' = 25 ns on average at 80 mK. The three Nb devices also showed T2* in the range of 4 to 6 ns, but T' was 9 to 15 ns, just about 1/2 the value we found in the Al device. For all the devices, the time constants were roughly independent of the isolation from the bias lines, implying that noise and dissipation from the bias leads were not the principal sources of dephasing and inhomogeneous broadening.
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Submitted 28 April, 2008;
originally announced April 2008.
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Observation of pinning mode of stripe phases of 2D systems in high Landau levels
Authors:
G. Sambandamurthy,
R. M. Lewis,
Han Zhu,
Y. P. Chen,
L. W. Engel,
D. C. Tsui,
L. N. Pfeiffer,
K. W. West
Abstract:
We study the radio-frequency diagonal conductivities of the anisotropic stripe phases of higher Landau levels near half integer fillings. In the hard direction, in which larger dc resistivity occurs, the spectrum exhibits a striking resonance, while in the orthogonal, easy direction, no resonance is discernable. The resonance is interpreted as a pinning mode of the stripe phase.
We study the radio-frequency diagonal conductivities of the anisotropic stripe phases of higher Landau levels near half integer fillings. In the hard direction, in which larger dc resistivity occurs, the spectrum exhibits a striking resonance, while in the orthogonal, easy direction, no resonance is discernable. The resonance is interpreted as a pinning mode of the stripe phase.
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Submitted 21 March, 2008;
originally announced March 2008.
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Comparison of coherence times in three dc SQUID phase qubits
Authors:
Hanhee Paik,
B. K. Cooper,
S. K. Dutta,
R. M. Lewis,
R. C. Ramos,
T. A. Palomaki,
A. J. Przybysz,
A. J. Dragt,
J. R. Anderson,
C. J. Lobb,
F. C. Wellstood
Abstract:
We report measurements of spectroscopic linewidth and Rabi oscillations in three thin-film dc SQUID phase qubits. One device had a single-turn Al loop, the second had a 6-turn Nb loop, and the third was a first order gradiometer formed from 6-turn wound and counter-wound Nb coils to provide isolation from spatially uniform flux noise. In the 6 - 7.2 GHz range, the spectroscopic coherence times f…
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We report measurements of spectroscopic linewidth and Rabi oscillations in three thin-film dc SQUID phase qubits. One device had a single-turn Al loop, the second had a 6-turn Nb loop, and the third was a first order gradiometer formed from 6-turn wound and counter-wound Nb coils to provide isolation from spatially uniform flux noise. In the 6 - 7.2 GHz range, the spectroscopic coherence times for the gradiometer varied from 4 ns to 8 ns, about the same as for the other devices (4 to 10 ns). The time constant for decay of Rabi oscillations was significantly longer in the single-turn Al device (20 to 30 ns) than either of the Nb devices (10 to 15 ns). These results imply that spatially uniform flux noise is not the main source of decoherence or inhomogenous broadening in these devices.
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Submitted 31 May, 2007; v1 submitted 31 May, 2007;
originally announced May 2007.
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Strong-field effects in the Rabi oscillations of the superconducting phase qubit
Authors:
F. W. Strauch,
S. K. Dutta,
Hanhee Paik,
T. A. Palomaki,
K. Mitra,
B. K. Cooper,
R. M. Lewis,
J. R. Anderson,
A. J. Dragt,
C. J. Lobb,
F. C. Wellstood
Abstract:
Rabi oscillations have been observed in many superconducting devices, and represent prototypical logic operations for quantum bits (qubits) in a quantum computer. We use a three-level multiphoton analysis to understand the behavior of the superconducting phase qubit (current-biased Josephson junction) at high microwave drive power. Analytical and numerical results for the ac Stark shift, single-…
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Rabi oscillations have been observed in many superconducting devices, and represent prototypical logic operations for quantum bits (qubits) in a quantum computer. We use a three-level multiphoton analysis to understand the behavior of the superconducting phase qubit (current-biased Josephson junction) at high microwave drive power. Analytical and numerical results for the ac Stark shift, single-photon Rabi frequency, and two-photon Rabi frequency are compared to measurements made on a dc SQUID phase qubit with Nb/AlOx/Nb tunnel junctions. Good agreement is found between theory and experiment.
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Submitted 2 March, 2007;
originally announced March 2007.
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Fast High-Fidelity Measurements of the Ground and Excited States of a dc-SQUID Phase Qubit
Authors:
T. A. Palomaki,
S. K. Dutta,
R. M. Lewis,
Hanhee Paik,
K. Mitra,
B. K. Cooper,
A. J. Przybysz,
A. J. Dragt,
J. R. Anderson,
C. J. Lobb,
F. C. Wellstood
Abstract:
We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine a…
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We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine average occupancy of the levels down to 0.01%, quantify small levels of leakage, and find the optimum pulse condition for single-shot measurements. Our best error rate is 3% with a measurement fidelity of 94%. By monitoring the escape rate during the pulse, the pulse current in the junction can be found to better than 10 nA on a 0.1 ns time scale. Theoretical analysis of the system reveals switching curves that are in good agreement with the data, as well as predictions that the ultimate single-shot error rate for this technique can reach 0.4% and the fidelity 99.2%.
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Submitted 17 August, 2006;
originally announced August 2006.
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Melting of a 2D Quantum Electron Solid in High Magnetic Field
Authors:
Yong P. Chen,
G. Sambandamurthy,
Z. H. Wang,
R. M. Lewis,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
L. N. Pfeiffer,
K. W. West
Abstract:
The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solids\cite{wilk:67}, where quantum effects often lead to unusual properties\cite{ekim:04}. In this letter we present experimental evidence to show that for a two dimensional (2D) solid formed by elec…
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The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solids\cite{wilk:67}, where quantum effects often lead to unusual properties\cite{ekim:04}. In this letter we present experimental evidence to show that for a two dimensional (2D) solid formed by electrons in a semiconductor sample under a strong perpendicular magnetic field\cite{shay:97} ($B$), the $T_m$ is not controlled by $n$, but effectively by the \textit{quantum correlation} between the electrons through the Landau level filling factor $ν$=$nh/eB$. Such melting behavior, different from that of all other known solids (including a classical 2D electron solid at zero magnetic field\cite{grim:79}), attests to the quantum nature of the magnetic field induced electron solid. Moreover, we found the $T_m$ to increase with the strength of the sample-dependent disorder that pins the electron solid.
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Submitted 12 July, 2006; v1 submitted 31 March, 2006;
originally announced April 2006.
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Microwave resonance of the reentrant insulating quantum Hall phases in the 1st excited Landau Level
Authors:
R. M. Lewis,
Yong P. Chen,
L. W. Engel,
D. C. Tsui,
L. N. Pfeiffer,
K. W. West
Abstract:
We present measurements of the real diagonal microwave conductivity of the reentrant insulating quantum Hall phases in the first excited Landau level at temperatures below 50 mK. A resonance is detected around filling factor $ν=2.58$ and weaker frequency dependence is seen at $ν=2.42$ and 2.28. These measurements are consistent with the formation of a bubble phase crystal centered around these…
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We present measurements of the real diagonal microwave conductivity of the reentrant insulating quantum Hall phases in the first excited Landau level at temperatures below 50 mK. A resonance is detected around filling factor $ν=2.58$ and weaker frequency dependence is seen at $ν=2.42$ and 2.28. These measurements are consistent with the formation of a bubble phase crystal centered around these $ν$ at very low temperatures.
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Submitted 24 November, 2004;
originally announced November 2004.
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AC Magnetotransport in Reentrant Insulating Phases of Two-dimensional Electrons near 1/5 and 1/3 Landau fillings
Authors:
Yong P. Chen,
Z. H. Wang,
R. M. Lewis,
P. D. Ye,
L. W. Engel,
D. C. Tsui,
L. N. Pfeiffer,
K. W. West
Abstract:
We have measured high frequency magnetotransport of a high quality two-dimensional electron system (2DES) near the reentrant insulating phase (RIP) at Landau fillings ($ν$) between 1/5 and 2/9. The magneto\textit{conductivity} in the RIP has resonant behavior around 150 MHz, showing a \textit{peak} at $ν$$\sim$0.21. Our data support the interpretation of the RIP as due to some pinned electron so…
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We have measured high frequency magnetotransport of a high quality two-dimensional electron system (2DES) near the reentrant insulating phase (RIP) at Landau fillings ($ν$) between 1/5 and 2/9. The magneto\textit{conductivity} in the RIP has resonant behavior around 150 MHz, showing a \textit{peak} at $ν$$\sim$0.21. Our data support the interpretation of the RIP as due to some pinned electron solid. We have also investigated a narrowly confined 2DES recently found to have a RIP at 1/3$<$$ν$$<$1/2 and we have revealed features, not seen in DC transport, that suggest some intriguing interplay between the 1/3 FQHE and RIP.
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Submitted 20 July, 2004;
originally announced July 2004.
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Evidence for Two Different Solid Phases of Two Dimensional Electrons in High Magnetic Fields
Authors:
Yong P. Chen,
R. M. Lewis,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
Z. H. Wang,
L. N. Pfeiffer,
K. W. West
Abstract:
We have performed RF spectroscopy on very high quality two dimensional electron systems in the high magnetic field insulating phase, usually associated with a Wigner solid (WS) pinned by disorder. We have found two different resonances in the frequency dependent real diagonal conductivity spectrum and we interpret them as coming from \textit{two} different pinned solid phases (labeled as "WS-A"…
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We have performed RF spectroscopy on very high quality two dimensional electron systems in the high magnetic field insulating phase, usually associated with a Wigner solid (WS) pinned by disorder. We have found two different resonances in the frequency dependent real diagonal conductivity spectrum and we interpret them as coming from \textit{two} different pinned solid phases (labeled as "WS-A" and "WS-B"). The resonance of WS-A is observable for Landau level filling $ν$$<$2/9 (but absent around the $ν$=1/5 fractional quantum Hall effect (FQHE)); it then \textit{crosses over} for $ν$$<$0.18 to the different WS-B resonance which dominates the spectrum at $ν$$<$0.125. Moreover, WS-A resonance is found to show dispersion with respect to the size of transmission line, indicating that WS-A has a large correlation length (exceeding $\sim$100 $μ$m); in contrast no such behavior is found for WS-B. We suggest that quantum correlations such as those responsible for FQHE may play an important role in giving rise to such different solids.
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Submitted 18 July, 2004;
originally announced July 2004.
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Evidence of a first order phase transition between Wigner crystal and Bubble Phases of 2D electrons in higher Landau levels
Authors:
R. M. Lewis,
Yong Chen,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
L. N. Pfeiffer,
K. W. West
Abstract:
For filling factors $ν$ in the range between 4.16 and 4.28, we simultaneously detect {\it two} resonances in the real diagonal microwave conductivity of a two--dimensional electron system (2DES) at low temperature $T \approx 35$ mK. We attribute the resonances to Wigner crystal and Bubble phases of the 2DES in higher Landau Levels. For $ν$ below and above this range, only single resonances are o…
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For filling factors $ν$ in the range between 4.16 and 4.28, we simultaneously detect {\it two} resonances in the real diagonal microwave conductivity of a two--dimensional electron system (2DES) at low temperature $T \approx 35$ mK. We attribute the resonances to Wigner crystal and Bubble phases of the 2DES in higher Landau Levels. For $ν$ below and above this range, only single resonances are observed. The coexistence of both phases is taken as evidence of a first order phase transition. We estimate the transition point as $ν=4.22$.
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Submitted 23 January, 2004;
originally announced January 2004.
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Wigner crystalization about $ν$=3
Authors:
R. M. Lewis,
Yong Chen,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
L. N. Pfeiffer,
K. W. West
Abstract:
We measure a resonance in the frequency dependence of the real diagonal conductivity, Re[$σ_{xx}$], near integer filling factor, $ν=3$. This resonance depends strongly on $ν$, with peak frequency $f_{pk} \approx 1.7$ GHz at $ν=3.04$ or 2.92 close to integer $ν$, but $f_{pk} \approx$ 600 MHz at $ν=3.19$ or 2.82, the extremes of where the resonance is visible.
The dependence of $f_{pk}$ upon…
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We measure a resonance in the frequency dependence of the real diagonal conductivity, Re[$σ_{xx}$], near integer filling factor, $ν=3$. This resonance depends strongly on $ν$, with peak frequency $f_{pk} \approx 1.7$ GHz at $ν=3.04$ or 2.92 close to integer $ν$, but $f_{pk} \approx$ 600 MHz at $ν=3.19$ or 2.82, the extremes of where the resonance is visible.
The dependence of $f_{pk}$ upon $n^*$, the density of electrons in the partially filled level, is discussed and compared with similar measurments by Chen {\it et al.}\cite{yong} about $ν=1$ and 2. We interpret the resonance as due to a pinned Wigner crystal phase with density $n^*$ about the $ν=3$ state.
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Submitted 8 July, 2003;
originally announced July 2003.
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Microwave Resonance of 2D Wigner Crystal around integer Landau fillings
Authors:
Yong P. Chen,
R. M. Lewis,
L. W. Engel,
D. C. Tsui,
P. D. Ye,
L. N. Pfeiffer,
K. W. West
Abstract:
We have observed a resonance in the real part of the finite frequency diagonal conductivity using microwave absorption measurements in high quality 2D electron systems near {\em integer fillings}. The resonance exists in some neighborhood of filling factor around corresponding integers and is qualitatively similar to previously observed resonance of weakly pinned Wigner crystal in high $B$ and v…
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We have observed a resonance in the real part of the finite frequency diagonal conductivity using microwave absorption measurements in high quality 2D electron systems near {\em integer fillings}. The resonance exists in some neighborhood of filling factor around corresponding integers and is qualitatively similar to previously observed resonance of weakly pinned Wigner crystal in high $B$ and very small filling factor regime. Data measured around both $ν=1$ and $ν=2$ are presented. We interpret the resonance as the signature of Wigner crystal state around integer Landau levels.
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Submitted 30 January, 2003;
originally announced January 2003.
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Microwave resonances of the bubble phases in 1/4 and 3/4 filled higher Landau levels
Authors:
R. M. Lewis,
P. D. Ye,
L. W. Engel,
D. C. Tsui,
L. N. Pfeiffer,
K. W. West
Abstract:
We have measured the diagonal conductivity in the microwave regime of an ultrahigh mobility two dimensional electron system. We find a sharp resonance in Re[sigma_{xx}] versus frequency when nu > 4 and the partial filling of the highest Landau level, nu^*, is ~ 1/4 or 3/4 and temperatures < 0.1 K. The resonance appears for a range of nu^* from 0.20 to 0.37 and again from 0.62 to 0.82. the peak f…
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We have measured the diagonal conductivity in the microwave regime of an ultrahigh mobility two dimensional electron system. We find a sharp resonance in Re[sigma_{xx}] versus frequency when nu > 4 and the partial filling of the highest Landau level, nu^*, is ~ 1/4 or 3/4 and temperatures < 0.1 K. The resonance appears for a range of nu^* from 0.20 to 0.37 and again from 0.62 to 0.82. the peak frequency, f_{pk} changes from ~ 500 to ~ 150 as nu^* = 1/2 is approached. This range of f_{pk} shows no dependence on nu where the resonance is observed. The quality factor, Q, of the resonance is maximum at ~ nu^* = 0.25 and 0.74. We interpret the resonance as due to a pinning mode of the bubble phase crystal.
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Submitted 31 July, 2002; v1 submitted 9 May, 2002;
originally announced May 2002.
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Correlation lengths of Wigner crystal order in two dimensional electron system at high magnetic field
Authors:
P. D. Ye,
L. W. Engel,
D. C. Tsui,
R. M. Lewis,
L. N. Pfeiffer,
K. West
Abstract:
The insulator terminating the fractional quantum Hall series at low Landau level filling νis generally taken to be a pinned Wigner crystal (WC), and exhibits a microwave resonance that is interpreted as a WC pinning mode. Systematically studying the resonance in a high quality sample for carrier densities, n, between 1.8 and 5.7 x 10^{10} cm^-2, we find maxima in resonance peak frequency, f_pk,…
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The insulator terminating the fractional quantum Hall series at low Landau level filling νis generally taken to be a pinned Wigner crystal (WC), and exhibits a microwave resonance that is interpreted as a WC pinning mode. Systematically studying the resonance in a high quality sample for carrier densities, n, between 1.8 and 5.7 x 10^{10} cm^-2, we find maxima in resonance peak frequency, f_pk, vs magnetic field, B. L, the domain size, or correlation length of Wigner crystalline order, is calculated from f_pk. For each n, L vs νtends at low νtoward a straight line with intercept; the linear fit is accurate over as much as a factor of 5 range of ν. We interpret the striking linear behavior as due to B compressing the electron wavefunctions, to alter the effective electron-impurity interaction.
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Submitted 3 April, 2002; v1 submitted 3 April, 2002;
originally announced April 2002.
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Frequency Scaling of Microwave Conductivity in the Integer Quantum Hall Effect Minima
Authors:
R. M. Lewis,
J. P. Carini
Abstract:
We measure the longitudinal conductivity $σ_{xx}$ at frequencies $1.246 {\rm GHz} \le f \le 10.05$ GHz over a range of temperatures $235 {\rm mK} \le T \le 4.2$ K with particular emphasis on the Quantum Hall plateaus. We find that $Re(σ_{xx})$ scales linearly with frequency for a range of magnetic field around the center of the plateaus, i.e. where $σ_{xx}(ω) \gg σ_{xx}^{DC}$. The width of this…
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We measure the longitudinal conductivity $σ_{xx}$ at frequencies $1.246 {\rm GHz} \le f \le 10.05$ GHz over a range of temperatures $235 {\rm mK} \le T \le 4.2$ K with particular emphasis on the Quantum Hall plateaus. We find that $Re(σ_{xx})$ scales linearly with frequency for a range of magnetic field around the center of the plateaus, i.e. where $σ_{xx}(ω) \gg σ_{xx}^{DC}$. The width of this scaling region decreases with higher temperature and vanishes by 1.2 K altogether. Comparison between localization length determined from $σ_{xx}(ω)$ and DC measurements on the same wafer show good agreement.
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Submitted 20 December, 2000;
originally announced December 2000.
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Evidence For Heavy Hole and Light Hole Current Separation in P-Type Resonant Tunneling Diodes With Prewells
Authors:
R. M. Lewis,
H. P. Wei,
S. Y. Lin,
J. F. Klem
Abstract:
We investigate the transport of holes through $AlAs/In_{.10}Ga_{.90}As$ resonant tunneling diodes which utilize $In_xGa_{1-x}As$ prewells in the emitter with $x=0,.10,$ and $.20$. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localiz- ation…
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We investigate the transport of holes through $AlAs/In_{.10}Ga_{.90}As$ resonant tunneling diodes which utilize $In_xGa_{1-x}As$ prewells in the emitter with $x=0,.10,$ and $.20$. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localiz- ation) of charges in the prewell and the formation of direct heavy(light) hole to heavy(light) hole conduction channels as a consequence.
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Submitted 24 May, 2000;
originally announced May 2000.
