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Machine learning assisted tracking of magnetic objects using quantum diamond magnetometry
Authors:
Fernando Meneses,
Christopher T. -K. Lew,
Anand Sivamalai,
Andy Sayers,
Brant C. Gibson,
Andrew D. Greentree,
Lloyd C. L. Hollenberg,
David A. Simpson
Abstract:
Remote magnetic sensing can be used to monitor the position of objects in real-time, enabling ground transport monitoring, underground infrastructure mapping and hazardous detection. However, magnetic signals are typically weak and complex, requiring sophisticated physical models to analyze them and a detailed knowledge of the system under study, factors that are frequently unavailable. In this wo…
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Remote magnetic sensing can be used to monitor the position of objects in real-time, enabling ground transport monitoring, underground infrastructure mapping and hazardous detection. However, magnetic signals are typically weak and complex, requiring sophisticated physical models to analyze them and a detailed knowledge of the system under study, factors that are frequently unavailable. In this work, we provide a solution to these limitations by demonstrating a Machine Learning (ML) method that can be trained exclusively on experimental data, without the need of any physical model, to predict the position of a magnetic target in real-time. The target can be any object with a magnetic signal above the floor noise, and in this case we use a quantum diamond magnetometer to track variations of few hundreds of nanoteslas produced by an elevator moving along a single axis. The one-dimensional movement is a simple yet challenging scenario, resembling realistic environments such as high buildings, tunnels or train circuits, and is the first step towards building broader applications. Our ML algorithm can be trained in approximately 40 min, achieving over 80% accuracy in predicting the target's position at a rate of 10 Hz, for a positional error tolerance of 30 cm, which is a precise distance compared to the 4-meter spacing between parking levels. Our results open up the possibility to apply this ML method more generally for real-time monitoring of magnetic objects, which will broaden the scope of magnetic detection applications.
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Submitted 20 February, 2025;
originally announced February 2025.
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3D-mapping and manipulation of photocurrent in an optoelectronic diamond device
Authors:
A. A. Wood,
D. J. McCloskey,
N. Dontschuk,
A. Lozovoi,
R. M. Goldblatt,
T. Delord,
D. A. Broadway,
J. -P. Tetienne,
B. C. Johnson,
K. T. Mitchell,
C. T. -K. Lew,
C. A. Meriles,
A. M. Martin
Abstract:
Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailor…
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Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailored to these unique systems, and the presence of optically-active defect centers in these materials offers a non-perturbative, in-situ characterisation system. Here, we combine charge-state sensitive optical microscopy and photoelectric detection of nitrogen-vacancy (NV) centres to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. We optically control the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. We then optically engineered conducting channels that control carrier flow, key steps towards optically reconfigurable, wide bandgap designer optoelectronics. We anticipate our approach might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic technologies.
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Submitted 10 February, 2024;
originally announced February 2024.
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Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
Authors:
D. A. Broadway,
N. Dontschuk,
A. Tsai,
S. E. Lillie,
C. T. -K. Lew,
J. C. McCallum,
B. C. Johnson,
M. W. Doherty,
A. Stacey,
L. C. L. Hollenberg,
J. -P. Tetienne
Abstract:
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are…
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Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.
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Submitted 13 September, 2018;
originally announced September 2018.
