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Lithium Intercalation in the Anisotropic van der Waals Magnetic Semiconductor CrSBr
Authors:
Kseniia Mosina,
Aljoscha Söll,
Jiri Sturala,
Martin Veselý,
Petr Levinský,
Florian Dirnberger,
Giuliana Materzanini,
Nicola Marzari,
Gian-Marco Rignanese,
Borna Radatović,
David Sedmidubsky,
Zdeněk Sofer
Abstract:
Alkali metal intercalation is an important strategy for doping van der Waals materials. Lithium, in particular, was shown to achieve exceptional charge carrier densities, reaching levels at which fundamental electrical, optical, and magnetic material properties begin to be strongly modified. While lithium is known to be highly volatile, its migration dynamics in anisotropic layered crystals remain…
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Alkali metal intercalation is an important strategy for doping van der Waals materials. Lithium, in particular, was shown to achieve exceptional charge carrier densities, reaching levels at which fundamental electrical, optical, and magnetic material properties begin to be strongly modified. While lithium is known to be highly volatile, its migration dynamics in anisotropic layered crystals remain poorly understood. In this work, we investigate the intercalation of lithium in-between layers of the anisotropic magnetic semiconductor CrSBr. Using exfoliated crystals, we are able to monitor the dynamics of the intercalation process in real time through optical and electrical characterization methods. Our measurements reveal highly anisotropic migration of Lithium characterized by diffusion coefficients that differ by more than one order of magnitude along a- and b-directions. This finding is in good agreement with our molecular dynamics simulations which show trajectories of lithium atoms primarily follow the Br-chains in the a-direction. Beyond that, we find that partially covering CrSBr crystals by thin hexagonal boron nitride (hBN) flakes has a significant impact on the intercalation process, and that lithium strongly enhances the electrical conductivity along the a-axis. Our method offers a new platform for lithium diffusion studies and encourages further research to pursue the fabrication of lithium-doped devices.
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Submitted 21 May, 2025;
originally announced May 2025.
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The preparation and properties of polycrystalline Bi$_2$O$_2$Se -- pitfalls and difficulties with reproducibility and charge transport limiting parameters
Authors:
Jan Zich,
Tomáš Plecháček,
Antonín Sojka,
Petr Levinský,
Jiří Navrátil,
Pavlína Ruleová,
Stanislav Šlang,
Karel Knížek,
Jiří Hejtmánek,
Vojtěch Nečina,
Čestmír Drašar
Abstract:
Thermoelectric materials allow the direct conversion of waste heat into electricity, and novel materials are being investigated for this purpose. Recently, doped Bi$_2$O$_2$Se has shown high application potential. In this study, we discuss causes for large variation in reported transport properties of pure Bi$_2$O$_2$Se and present a preparation method that improves the reproducibility of undoped…
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Thermoelectric materials allow the direct conversion of waste heat into electricity, and novel materials are being investigated for this purpose. Recently, doped Bi$_2$O$_2$Se has shown high application potential. In this study, we discuss causes for large variation in reported transport properties of pure Bi$_2$O$_2$Se and present a preparation method that improves the reproducibility of undoped polycrystalline samples and improves their stability under thermal cycling. Key steps of this method include calcination of the Bi$_2$O$_3$ precursor, purification of the synthesized material in a temperature gradient, use of a coarse particle fraction and compaction of the powders in a Si3N4 die instead of a graphite die. The resulting polycrystalline material exhibits improved reproducibility and enhanced resistance to thermal cycling. It has room temperature electrical conductivity σRT ~ 500 S.m-1 and Seebeck coefficient S ~ -300 $μ$V.K$^{-1}$. These properties make it suitable as a reference material for future doping studies. The presented synthesis approach may provide a more reliable platform for investigating the intrinsic behavior and doping response of Bi$_2$O$_2$Se in thermoelectric applications.
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Submitted 21 April, 2025;
originally announced April 2025.
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Phonon properties and unconventional heat transfer in quasi-2D $Bi_2O_2Se$ crystal
Authors:
Jan Zich,
Antonín Sojka,
Petr Levinský,
Martin Míšek,
Kyo-Hoon Ahn,
Jiří Navrátil,
Jiří Hejtmánek,
Karel Knížek,
Václav Holý,
Dmitry Nuzhnyy,
Fedir Borodavka,
Stanislav Kamba,
Čestmír Drašar
Abstract:
Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure and other physical properties still eludes understanding: carrier mobility increases non-intuitively with carrier concentration; the observed $T^2$ temperature dependence of resistivity lacks explanation. Moreover, a very…
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Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure and other physical properties still eludes understanding: carrier mobility increases non-intuitively with carrier concentration; the observed $T^2$ temperature dependence of resistivity lacks explanation. Moreover, a very high relative out-of-plane permittivity of about 150 has been reported in the literature. A proper explanation for such a high permittivity is still lacking. We have performed infrared (IR) reflectivity and Raman scattering experiments on a large perfect single crystal with defined mosaicity, carrier concentration and mobility. Five of the eight phonons allowed by factor group theory have been observed and their symmetries determined. The IR spectra show that the permittivity measured in the tetragonal plane is as high as $ε_r{\approx}500$, and this high value is due to a strong polar phonon with a low frequency of ~34 $cm^{-1}$ (~1 THz). Such an unusually high permittivity allows the screening of charge defects, leading to the observation of high electron mobility at low temperatures. It also allows effective modulation doping providing a platform for high performance 2D electronics. DFT calculations suggest the existence of a very low frequency acoustic phonon ~14 $cm^{-1}$ (~0.4 THz). Both the low frequency phonons cause anomalous phonon DOS, which is reflected in the unconventional temperature dependence of the heat capacity, $c_M{\approx}T^{3.5}$. The temperature-dependent, two-component group velocity is proposed to explains the unusual temperature dependence of the thermal conductivity, $κ{\approx}T^{1.5}$
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Submitted 8 April, 2025; v1 submitted 7 April, 2025;
originally announced April 2025.
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Spin Seebeck effect in $\varepsilon$-Fe$_2$O$_3$ thin layer with high coercive field
Authors:
K. Knížek,
M. Pashchenko,
P. Levinský,
O. Kaman,
P. Jiříček,
J. Hejtmánek,
M. Soroka,
J. Buršík
Abstract:
Spin Seebeck effect has been investigated in Pt/$\varepsilon$-Fe$_2$O$_3$ bilayers. The $\varepsilon$-Fe$_2$O$_3$ thin layer with $40-70$~nm thickness were deposited by a spin-coating method on Y:ZrO$_2$(100) substrates. The prepared layers are highly oriented with the easy magnetic $a$-axis parallel to the film surface. The magnetic hysteresis loops measured at room temperature with magnetic fiel…
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Spin Seebeck effect has been investigated in Pt/$\varepsilon$-Fe$_2$O$_3$ bilayers. The $\varepsilon$-Fe$_2$O$_3$ thin layer with $40-70$~nm thickness were deposited by a spin-coating method on Y:ZrO$_2$(100) substrates. The prepared layers are highly oriented with the easy magnetic $a$-axis parallel to the film surface. The magnetic hysteresis loops measured at room temperature with magnetic field parallel to the layer exhibit coercive fields up to 11.6~kOe, which is so far the highest value measured for $\varepsilon$-Fe$_2$O$_3$ thin layer samples. The shape of the spin Seebeck hysteresis loops is similar to the shape of magnetization for single phase layers with coercive field around 10~kOe. In some prepared layers a small amount of secondary soft ferrimagnetic phase is revealed by a constricted shape of magnetization loops, in contrast to spin Seebeck loops, where no constriction is observed. A difference in encountered in the case of layers with a small amount ($1-2$~volume\%) of secondary soft ferrimagnetic phase, which is revealed by a constricted shape of magnetization loops, in contrast to spin Seebeck loops, where no constriction is observed.
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Submitted 6 April, 2018;
originally announced April 2018.
