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Are high-energy photoemission final states free-electron-like?
Authors:
V. N. Strocov,
L. L. Lev,
F. Alarab,
P. Constantinou,
T. Schmitt,
T. J. Z. Stock,
L. Nicolaï,
J. Očenášek,
J. Minár
Abstract:
Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the p…
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Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the photoemission final states. Our soft-X-ray ARPES data on Ag metal reveals, however, that even at high excitation energies the final states can be a way more complex, incorporating several Bloch waves with different out-of-plane momenta. Such multiband final states manifest themselves as a complex structure and excessive broadening of the spectral peaks from 3D electron states. We analyse the origins of this phenomenon, and trace it to other materials such as Si and GaN. Our findings are essential for accurate determination of the 3D band structure over a wide range of materials and excitation energies in the ARPES experiment.
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Submitted 30 December, 2022;
originally announced January 2023.
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Inherited Weak Topological Insulator Signatures in Topological Hourglass Semimetal Nb3XTe6 (X = Si, Ge)
Authors:
Q. Wan,
T. Y. Yang,
S. Li,
M. Yang,
Z. Zhu,
C. L. Wu,
C. Peng,
S. K. Mo,
W. Wu,
Z. H. Chen,
Y. B. Huang,
L. L. Lev,
V. N. Strocov,
J. Hu,
Z. Q. Mao,
Hao Zheng,
J. F. Jia,
Y. G. Shi,
Shengyuan A. Yang,
N. Xu
Abstract:
Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals materials Nb3XTe6 (X = Si, Ge). The fingerprints of weak TI homologically emerge with hourglass fermions, as multi nodal chains composed by the same pair of…
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Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals materials Nb3XTe6 (X = Si, Ge). The fingerprints of weak TI homologically emerge with hourglass fermions, as multi nodal chains composed by the same pair of valence and conduction bands gapped by spin orbit coupling. The novel topological state, with a pair of valence and conduction bands encoding both weak TI and hourglass semimetal nature, is essential and guaranteed by nonsymmorphic symmetry. It is distinct from TIs studied previously based on band inversions without symmetry protections.
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Submitted 15 April, 2021;
originally announced April 2021.
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Electron-polaron dichotomy of charge carriers in perovskite oxides
Authors:
Marius-Adrian Husanu,
Lorenzo Vistoli,
Carla Verdi,
Anke Sander,
Vincent Garcia,
Julien Rault,
Federico Bisti,
Leonid L. Lev,
Thorsten Schmitt,
Feliciano Giustino,
Andrey S. Mishchenko,
Manuel Bibes,
Vladimir N. Strocov
Abstract:
Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here,…
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Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs.
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Submitted 15 April, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Three-dimensionality of mobile electrons at X-ray-irradiated LaAlO$_3$/SrTiO$_3$ interfaces
Authors:
V. N. Strocov,
M. -A. Husanu,
A. Chikina,
L. L. Lev,
V. A. Rogalev,
T. Schmitt,
F. Lechermann
Abstract:
Effects of X-ray irradiation on the electronic structure of LaAlO$_3$/SrTiO$_3$ (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their stoichiometry, were investigated by soft-X-ray ARPES. The irradiation at low sample temperature below ~100K creates oxygen vacancies (VOs) injecting Ti t2g-electrons into the interfacial mobile electron system (MES). At thi…
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Effects of X-ray irradiation on the electronic structure of LaAlO$_3$/SrTiO$_3$ (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their stoichiometry, were investigated by soft-X-ray ARPES. The irradiation at low sample temperature below ~100K creates oxygen vacancies (VOs) injecting Ti t2g-electrons into the interfacial mobile electron system (MES). At this temperature the oxygen out-diffusion is suppressed, and the VOs are expected to appear mostly in the top STO layer. However, we observe a pronounced three-dimensional (3D) character of the X-ray generated MES in our samples, indicating its large extension into the STO depth, which contrasts to the purely two-dimensional (2D) character of the MES in standard stoichiometric LAO/STO samples. Based on self-interaction-corrected DFT calculations of the MES induced by VOs at the interface and in STO bulk, we discuss possible mechanisms of this puzzling three-dimensionality. They may involve VOs remnant in the deeper STO layers, photoconductivity-induced metallic states as well as more exotic mechanisms such as X-ray induced formation of Frenkel pairs.
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Submitted 23 September, 2021; v1 submitted 9 September, 2019;
originally announced September 2019.
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k-Resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES
Authors:
V. N. Strocov,
L. L. Lev,
M. Kobayashi,
C. Cancellieri,
M. -A. Husanu,
A. Chikina,
N. B. M. Schröter,
X. Wang,
J. A. Krieger,
Z. Salman
Abstract:
Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission.…
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Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission. These advantages make SX-ARPES ideally suited for buried heterostructure and impurity systems, which are at the heart of current and future electronics. These applications are illustrated here with a few pioneering results, including buried quantum-well states in semiconductor and oxide heterostructures, their bosonic coupling critically affecting electron transport, magnetic impurities in diluted magnetic semiconductors and topological materials, etc. High photon flux and detection efficiency are crucial for pushing the SX-ARPES experiment to these most photon-hungry cases.
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Submitted 26 June, 2019;
originally announced June 2019.
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Three-dimensional Fermi surface of 2H-NbSe$_2$ - Implications for the mechanism of charge density waves
Authors:
F. Weber,
R. Hott,
R. Heid,
L. L. Lev,
M. Caputo,
T. Schmitt,
V. N. Strocov
Abstract:
We investigate the three-dimensional electronic structure of the seminal charge-density-wave (CDW) material 2H-NbSe$_2$ by soft x-ray angle-resolved photoelectron spectroscopy and density-functional theory. Our results reveal the pronounced 3D character of the electronic structure formed in the quasi-two-dimensional layered crystal structure. In particular, we find a strong dispersion along $k_z$…
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We investigate the three-dimensional electronic structure of the seminal charge-density-wave (CDW) material 2H-NbSe$_2$ by soft x-ray angle-resolved photoelectron spectroscopy and density-functional theory. Our results reveal the pronounced 3D character of the electronic structure formed in the quasi-two-dimensional layered crystal structure. In particular, we find a strong dispersion along $k_z$ excluding a nesting-driven CDW formation based on experimental data. The 3D-like band structure of 2H-NbSe$_2$ has strong implications for the intriguing phase competition of CDW order with superconductivity.
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Submitted 23 July, 2018;
originally announced July 2018.
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k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
Authors:
L. L. Lev,
I. O. Maiboroda,
M. -A. Husanu,
E. S. Grichuk,
N. K. Chumakov,
I. S. Ezubchenko,
I. A. Chernykh,
X. Wang,
B. Tobler,
T. Schmitt,
M. L. Zanaveskin,
V. G. Valeyev,
V. N. Strocov
Abstract:
Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D elect…
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Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ultrathin barrier layer, key elements in current high-frequency and high-power electronics. Its electronic structure is accessed with angle-resolved photoelectron spectroscopy whose probing depth is pushed to a few nm using soft-X-ray synchrotron radiation. The experiment yields direct k-space images of the electronic structure fundamentals of this system: the Fermi surface, band dispersions and occupancy, and the Fourier composition of wavefunctions encoded in the k-dependent photoemission intensity. We discover significant planar anisotropy of the electron Fermi surface and effective mass connected with relaxation of the interfacial atomic positions, which translates into non-linear (high-field) transport properties of the GaN/AlGaN heterostructures as an anisotropy of the saturation drift velocity of the 2D electrons.
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Submitted 6 May, 2018; v1 submitted 24 April, 2018;
originally announced April 2018.
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Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics
Authors:
Leonid L. Lev,
Dmitry V. Averyanov,
Andrey M. Tokmachev,
Federico Bisti,
Victor A. Rogalev,
Vladimir N. Strocov,
Vyacheslav G. Storchak
Abstract:
Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic…
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Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.
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Submitted 15 March, 2016;
originally announced March 2016.
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Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance
Authors:
L. L. Lev,
J. Krempaský,
U. Staub,
V. A. Rogalev,
T. Schmitt,
M. Shi,
P. Blaha,
A. S. Mishchenko,
A. A. Veligzhanin,
Y. V. Zubavichus,
M. B. Tsetlin,
H. Volfová,
J. Braun,
J. Minár,
V. N. Strocov
Abstract:
Electronic structure of the three-dimensional colossal magnetoresistive perovskite La1-xSrxMnO3 has been established using soft-X-ray ARPES with its intrinsically sharp definition of three-dimensional electron momentum. The experimental results show much weaker polaronic coupling compared to the bilayer manganites and are consistent with the GGA+U band structure. The experimental Fermi surface unv…
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Electronic structure of the three-dimensional colossal magnetoresistive perovskite La1-xSrxMnO3 has been established using soft-X-ray ARPES with its intrinsically sharp definition of three-dimensional electron momentum. The experimental results show much weaker polaronic coupling compared to the bilayer manganites and are consistent with the GGA+U band structure. The experimental Fermi surface unveils the canonical topology of alternating three-dimensional electron spheres and hole cubes, with their shadow contours manifesting the rhombohedral lattice distortion. This picture has been confirmed by one-step photoemission calculations including displacement of the apical oxygen atoms. The rhombohedral distortion is neutral to the Jahn-Teller effect and thus polaronic coupling, but affects the double-exchange electron hopping and thus the colossal magnetoresistance effect.
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Submitted 1 June, 2015;
originally announced June 2015.
