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Showing 1–9 of 9 results for author: Lev, L L

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  1. arXiv:2301.00033  [pdf

    cond-mat.other cond-mat.mtrl-sci

    Are high-energy photoemission final states free-electron-like?

    Authors: V. N. Strocov, L. L. Lev, F. Alarab, P. Constantinou, T. Schmitt, T. J. Z. Stock, L. Nicolaï, J. Očenášek, J. Minár

    Abstract: Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the p… ▽ More

    Submitted 30 December, 2022; originally announced January 2023.

  2. arXiv:2104.07331  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Inherited Weak Topological Insulator Signatures in Topological Hourglass Semimetal Nb3XTe6 (X = Si, Ge)

    Authors: Q. Wan, T. Y. Yang, S. Li, M. Yang, Z. Zhu, C. L. Wu, C. Peng, S. K. Mo, W. Wu, Z. H. Chen, Y. B. Huang, L. L. Lev, V. N. Strocov, J. Hu, Z. Q. Mao, Hao Zheng, J. F. Jia, Y. G. Shi, Shengyuan A. Yang, N. Xu

    Abstract: Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals materials Nb3XTe6 (X = Si, Ge). The fingerprints of weak TI homologically emerge with hourglass fermions, as multi nodal chains composed by the same pair of… ▽ More

    Submitted 15 April, 2021; originally announced April 2021.

    Comments: 4 figures

    Journal ref: Phys. Rev. B 103, 165107 (2021)

  3. arXiv:2004.02953  [pdf

    cond-mat.mtrl-sci cond-mat.str-el

    Electron-polaron dichotomy of charge carriers in perovskite oxides

    Authors: Marius-Adrian Husanu, Lorenzo Vistoli, Carla Verdi, Anke Sander, Vincent Garcia, Julien Rault, Federico Bisti, Leonid L. Lev, Thorsten Schmitt, Feliciano Giustino, Andrey S. Mishchenko, Manuel Bibes, Vladimir N. Strocov

    Abstract: Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here,… ▽ More

    Submitted 15 April, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

    Comments: Accepted manuscript to Communications Physics 3, 62 (2020)

    Journal ref: Communications Physics 3, 62 (2020)

  4. arXiv:1909.04106  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Three-dimensionality of mobile electrons at X-ray-irradiated LaAlO$_3$/SrTiO$_3$ interfaces

    Authors: V. N. Strocov, M. -A. Husanu, A. Chikina, L. L. Lev, V. A. Rogalev, T. Schmitt, F. Lechermann

    Abstract: Effects of X-ray irradiation on the electronic structure of LaAlO$_3$/SrTiO$_3$ (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their stoichiometry, were investigated by soft-X-ray ARPES. The irradiation at low sample temperature below ~100K creates oxygen vacancies (VOs) injecting Ti t2g-electrons into the interfacial mobile electron system (MES). At thi… ▽ More

    Submitted 23 September, 2021; v1 submitted 9 September, 2019; originally announced September 2019.

  5. arXiv:1906.11025  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

    k-Resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES

    Authors: V. N. Strocov, L. L. Lev, M. Kobayashi, C. Cancellieri, M. -A. Husanu, A. Chikina, N. B. M. Schröter, X. Wang, J. A. Krieger, Z. Salman

    Abstract: Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission.… ▽ More

    Submitted 26 June, 2019; originally announced June 2019.

  6. arXiv:1807.08472  [pdf

    cond-mat.supr-con cond-mat.str-el

    Three-dimensional Fermi surface of 2H-NbSe$_2$ - Implications for the mechanism of charge density waves

    Authors: F. Weber, R. Hott, R. Heid, L. L. Lev, M. Caputo, T. Schmitt, V. N. Strocov

    Abstract: We investigate the three-dimensional electronic structure of the seminal charge-density-wave (CDW) material 2H-NbSe$_2$ by soft x-ray angle-resolved photoelectron spectroscopy and density-functional theory. Our results reveal the pronounced 3D character of the electronic structure formed in the quasi-two-dimensional layered crystal structure. In particular, we find a strong dispersion along $k_z$… ▽ More

    Submitted 23 July, 2018; originally announced July 2018.

    Journal ref: Physical Review B 97, 235122 (2018)

  7. arXiv:1804.08956  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

    k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

    Authors: L. L. Lev, I. O. Maiboroda, M. -A. Husanu, E. S. Grichuk, N. K. Chumakov, I. S. Ezubchenko, I. A. Chernykh, X. Wang, B. Tobler, T. Schmitt, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov

    Abstract: Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D elect… ▽ More

    Submitted 6 May, 2018; v1 submitted 24 April, 2018; originally announced April 2018.

    Comments: In press with Nature Comm. (2018)

  8. arXiv:1603.04666  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics

    Authors: Leonid L. Lev, Dmitry V. Averyanov, Andrey M. Tokmachev, Federico Bisti, Victor A. Rogalev, Vladimir N. Strocov, Vyacheslav G. Storchak

    Abstract: Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic… ▽ More

    Submitted 15 March, 2016; originally announced March 2016.

  9. arXiv:1506.00402  [pdf

    cond-mat.str-el cond-mat.mtrl-sci

    Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance

    Authors: L. L. Lev, J. Krempaský, U. Staub, V. A. Rogalev, T. Schmitt, M. Shi, P. Blaha, A. S. Mishchenko, A. A. Veligzhanin, Y. V. Zubavichus, M. B. Tsetlin, H. Volfová, J. Braun, J. Minár, V. N. Strocov

    Abstract: Electronic structure of the three-dimensional colossal magnetoresistive perovskite La1-xSrxMnO3 has been established using soft-X-ray ARPES with its intrinsically sharp definition of three-dimensional electron momentum. The experimental results show much weaker polaronic coupling compared to the bilayer manganites and are consistent with the GGA+U band structure. The experimental Fermi surface unv… ▽ More

    Submitted 1 June, 2015; originally announced June 2015.

    Journal ref: Phys. Rev. Lett. 114 (2015)