Showing 1–49 of 49 results for author: Leturcq, R

How much gallium do we need for a p-type Cu(In,Ga)Se2?

Authors: Omar Ramírez, Evandro Martin Lanzoni, Ricardo G. Poeira, Thomas P. Weiss, Renaud Leturcq, Alex Redinger, Susanne Siebentritt

Abstract: Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no… ▽ More Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no matter whether it comes from native defects or extrinsic impurities. In this contribution, we study the N-to-P transition in Cu-poor Cu(In,Ga)Se2 single crystals in dependence of the gallium content. Our results show that Cu(In,Ga)Se2 can still be grown as an N-type semiconductor until the gallium content reaches the critical concentration of 15-19%, where the N-to-P transition occurs. Furthermore, trends in the Seebeck coefficient and activation energies extracted from temperature-dependent conductivity measurements, demonstrate that the carrier concentration drops by around two orders of magnitude near the transition concentration. Our proposed model explains the N-to-P transition based on the differences in formation energies of donor and acceptor defects caused by the addition of gallium. △ Less

Submitted 27 April, 2022; originally announced April 2022.

Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency

Authors: Mohit Sood, Poorani Gnanasambandan, Damilola Adeleye, Sudhanshu Shukla, Noureddine Adjeroud, Renaud Leturcq, Susanne Siebentritt

Abstract: Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS interface. Reducing this loss necessitates the substitution of CdS by an alternative buffer layer. However, the substitute buffer layer may introduce electrical barriers in the device due to unfavorable band alignment at the… ▽ More Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS interface. Reducing this loss necessitates the substitution of CdS by an alternative buffer layer. However, the substitute buffer layer may introduce electrical barriers in the device due to unfavorable band alignment at the other interfaces such as between buffer/ZnO i-layer. This study aims to reduce interface recombinations and eliminate electrical barriers in Cu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxO buffer and i-layer combination deposited using atomic layer deposition and magnetron sputtering, respectively. The devices prepared with these layers are characterized by current-voltage and photoluminescence measurements. Numerical simulations are performed to comprehend the influence of electrical barriers on the device characteristics. An optimal composition of Zn1 xMgxO x = 0.27 is identified for a suitable conduction band alignment with Cu(In,Ga)S2 with a bandgap of ~1.6 eV, suppressing interface recombination and avoiding barriers. Optimized buffer composition together with a suitable i-layer led to a device with 14 % efficiency and an open-circuit voltage of 943 mV. A comparison of optoelectronic measurements for devices prepared with ZnO and Al:(Zn,Mg)O shows the necessity to replace the ZnO i-layer with Al:(Zn,Mg)O i-layer for a high-efficiency device. △ Less

Submitted 22 February, 2022; originally announced February 2022.

Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

Authors: Georgios Chatzigiannakis, Angelina Jaros, Renaud Leturcq, Jorgen Jungclaus, Tobias Voss, Spiros Gardelis, Maria Kandyla

Abstract: An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visible, and near IR (NIR) photons by polarity control of the photocurrent. The photodetector is developed by atomic layer deposition (ALD) of ZnO on n-Si… ▽ More An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visible, and near IR (NIR) photons by polarity control of the photocurrent. The photodetector is developed by atomic layer deposition (ALD) of ZnO on n-Si, followed by electric contact deposition and annealing. Photoluminescence measurements reveal high optical quality and improved crystallinity of annealed ZnO on silicon. Photocurrent measurements as a function of illumination wavelength and bias voltage show small negative values in the UV-visible spectral range at zero and positive bias voltage and high positive values in the NIR spectral range. For these measurements, we consider the electric contact to ZnO as the anode and the electric contact to silicon as the cathode. At negative bias voltage, the device shows broadband operation with high photocurrent values across the UV-vis-NIR. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Comments: arXiv admin note: text overlap with arXiv:2010.01586

Journal ref: Journal of Alloys and Compounds 903 (2022) 163836

Laser-microstructured ZnO/p-Si photodetector with enhanced and broadband responsivity across the UV-Vis-NIR

Authors: Georgios Chatzigiannakis, Angelina Jaros, Renaud Leturcq, Jörgen Jungclaus, Tobias Voss, Spyros Gardelis, Maria Kandyla

Abstract: We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p-type silicon was obtained by ns-laser irradiation in SF6 gas, which results in the formation of quasi-ordered and uniform microspikes on the silicon… ▽ More We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p-type silicon was obtained by ns-laser irradiation in SF6 gas, which results in the formation of quasi-ordered and uniform microspikes on the silicon surface. The irradiated silicon contains sulfur impurities, which extend its absorbance to the near infrared. A thin film of ZnO was conformally deposited on the microstructured silicon substrates by ALD. Photoluminescence measurements indicate high crystalline quality of the ZnO film after annealing. Current-voltage (I-V) measurements of the ZnO/p-Si heterodiodes in dark show a non-linear behavior with unusual high current values in reverse bias. Under illumination photocurrent is observed for reverse bias, even for wavelengths below the silicon bandgap in the case of the laser-microstructured photodetectors. Higher current values are measured for the microstructured photodetectors, compared to planar ones. Photoconductivity measurements show enhanced responsivity across the UV-Vis-NIR spectral range for the laser-microstructured devices, due to their increased surface area and light absorption. △ Less

Submitted 4 October, 2020; originally announced October 2020.

Journal ref: ACS Applied Electronic Materials 2, 2819-2828, 2020

Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Authors: Nohora Caicedo, Renaud Leturcq, Jean-Pierre Raskin, Denis Flandre, Damien Lenoble

Abstract: Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor… ▽ More Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate model, we disentangle the contribution of the nanowire resistance and of the junctions between nanowires in the network. The applied model shows a very good consistency with the experimental data, allowing us to demonstrate that the response to oxygen at room temperature is dominated by the barrier potential at low bias voltage, and that the nanowire resistance starts to play a role at higher bias voltage. This analysis allows us to find the appropriate device geometry and working point in order to optimize the sensitivity. Such analysis is important for providing design rules, not only for sensing devices, but also for applications in electronics and opto-electronics using nanostructures networks with different materials and geometries. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Journal ref: Sens. Act. B 297, 126602 (2019)

A high aspect ratio Fin-Ion Sensitive Field Effect Transistor: compromises towards better electrochemical bio-sensing

Authors: Serena Rollo, Dipti Rani, Renaud Leturcq, Wouter Olthuis, César Pascual García

Abstract: The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity… ▽ More The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity and response time, but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high heigth to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time. We fabricated different devices and characterised their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, stablishing an advantage in total signal and linearity for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimisation of reliability and efficiency in terms of limits of detection, for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role. △ Less

Submitted 8 January, 2019; originally announced January 2019.

Comments: Article submitted to Nano Letters

Ultra-narrow ionization resonances in a quantum dot under broadband excitation

Authors: Simon Gustavsson, Mark S. Rudner, Leonid S. Levitov, Renaud Leturcq, Matthias Studer, Thomas Ihn, Klaus Ensslin

Abstract: Semiconductor quantum dots driven by the broadband radiation fields of nearby quantum point contacts provide an exciting new setting for probing dynamics in driven quantum systems at the nanoscale. We report on real-time charge-sensing measurements of the dot occupation, which reveal sharp resonances in the ionization rate as a function of gate voltage and applied magnetic field. Despite the broad… ▽ More Semiconductor quantum dots driven by the broadband radiation fields of nearby quantum point contacts provide an exciting new setting for probing dynamics in driven quantum systems at the nanoscale. We report on real-time charge-sensing measurements of the dot occupation, which reveal sharp resonances in the ionization rate as a function of gate voltage and applied magnetic field. Despite the broadband nature of excitation, the resonance widths are much smaller than the scale of thermal broadening. We show that such resonant enhancement of ionization is not accounted for by conventional approaches relying on elastic scattering processes, but can be explained via a mechanism based on a bottleneck process that is relieved near excited state level crossings. The experiment thus reveals a new regime of a strongly driven quantum dynamics in few-electron systems. The theoretical results are in good agreement with observations. △ Less

Submitted 13 March, 2014; originally announced March 2014.

Journal ref: Phys. Rev. B 89, 115304 (2014)

Magneto-transport Subbands Spectroscopy in InAs Nanowires

Authors: Florian Vigneau, Vladimir Prudkovkiy, Ivan Duchemin, Walter Escoffier, Philippe Caroff, Yann-Michel Niquet, Renaud Leturcq, Michel Goiran, Bertrand Raquet

Abstract: We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic… ▽ More We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic band structure consistently support the experimental results and reveal key parameters of the electronic confinement. △ Less

Submitted 13 November, 2013; originally announced November 2013.

Comments: 13 Pages, 5 figures

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

Authors: Chloé Rolland, Philippe Caroff, Christophe Coinon, Xavier Wallart, Renaud Leturcq

Abstract: We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire face… ▽ More We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth. △ Less

Submitted 8 July, 2013; originally announced July 2013.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 223105 (2013)

Persistent enhancement of the carrier density in electron irradiated InAs nanowires

Authors: Corentin Durand, Maxime Berthe, Younes Makoudi, Jean-Philippe Nys, Renaud Leturcq, Philippe Caroff, Bruno Grandidier

Abstract: We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to… ▽ More We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to be caused by the increase of the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the nanowire electrical properties are predominantly affected by radiation-induced defects occuring at the nanowire surface and not in the bulk. △ Less

Submitted 2 April, 2013; originally announced April 2013.

Comments: 18 pages, 5 figures

Journal ref: Nanotechnology 24, 275706 (2013)

Fluctuation Theorem and Microreversibility in a Quantum Coherent Conductor

Authors: Shuji Nakamura, Yoshiaki Yamauchi, Masayuki Hashisaka, Kensaku Chida, Kensuke Kobayashi, Teruo Ono, Renaud Leturcq, Klaus Ensslin, Keiji Saito, Yasuhiro Utsumi, Arthur C. Gossard

Abstract: Mesoscopic systems provide us a unique experimental stage to address non-equilibrium quantum statistical physics. By using a simple tunneling model, we describe the electron exchange process via a quantum coherent conductor between two reservoirs, which yields the fluctuation theorem (FT) in mesoscopic transport. We experimentally show that such a treatment is semi-quantitatively validated in the… ▽ More Mesoscopic systems provide us a unique experimental stage to address non-equilibrium quantum statistical physics. By using a simple tunneling model, we describe the electron exchange process via a quantum coherent conductor between two reservoirs, which yields the fluctuation theorem (FT) in mesoscopic transport. We experimentally show that such a treatment is semi-quantitatively validated in the current and noise measurement in an Aharonov-Bohm ring. The experimental proof of the microreversibility assumed in the derivation of FT is presented. △ Less

Submitted 19 April, 2011; v1 submitted 31 January, 2011; originally announced January 2011.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 83, 155431 (2011) [Editors' Suggestion]

Non-equilibrium Fluctuation Relations in a Quantum Coherent Conductor

Authors: Shuji Nakamura, Yoshiaki Yamauchi, Masayuki Hashisaka, Kensaku Chida, Kensuke Kobayashi, Teruo Ono, Renaud Leturcq, Klaus Ensslin, Keiji Saito, Yasuhiro Utsumi, Arthur C. Gossard

Abstract: We experimentally demonstrate the validity of non-equilibrium fluctuation relations by using a quantum coherent conductor. In equilibrium the fluctuation-dissipation relation leads to the correlation between current and current noise at the conductor, namely, Johnson-Nyqusit relation. When the conductor is voltage-biased so that the non-linear regime is entered, the fluctuation theorem has predi… ▽ More We experimentally demonstrate the validity of non-equilibrium fluctuation relations by using a quantum coherent conductor. In equilibrium the fluctuation-dissipation relation leads to the correlation between current and current noise at the conductor, namely, Johnson-Nyqusit relation. When the conductor is voltage-biased so that the non-linear regime is entered, the fluctuation theorem has predicted similar non-equilibrium fluctuation relations, which hold true even when the Onsager-Casmir relations are broken in magnetic fields. Our experiments qualitatively validate the predictions as the first evidence of this theorem in the non-equilibrium quantum regime. In the appendix, we give simple deduction of the higher order correlations between the current and the current noise based on the fluctuation theorem. △ Less

Submitted 11 March, 2010; v1 submitted 18 November, 2009; originally announced November 2009.

Comments: 4 pages, 4 figures with 1-page appendix.

Journal ref: Phys. Rev. Lett. 104, 080602 (2010).

Asymmetric Franck-Condon factors in suspended carbon nanotube quantum dots

Authors: Fabio Cavaliere, Eros Mariani, Renaud Leturcq, Christoph Stampfer, Maura Sassetti

Abstract: Electronic states and vibrons in carbon nanotube quantum dots have in general different location and size. As a consequence, the conventional Anderson-Holstein model, coupling vibrons to the dot total charge only, may no longer be appropriated in general. Here we explicitly address the role of the spatial fluctuations of the electronic density, yielding space-dependent Franck-Condon factors. We di… ▽ More Electronic states and vibrons in carbon nanotube quantum dots have in general different location and size. As a consequence, the conventional Anderson-Holstein model, coupling vibrons to the dot total charge only, may no longer be appropriated in general. Here we explicitly address the role of the spatial fluctuations of the electronic density, yielding space-dependent Franck-Condon factors. We discuss the consequent marked effects on transport which are compatible with recent measurements. This picture can be relevant for tunneling experiments in generic nano-electromechanical systems. △ Less

Submitted 6 May, 2010; v1 submitted 11 November, 2009; originally announced November 2009.

Comments: 4+ pages, 3 figures (2 color, 1 BW)

Journal ref: Phys. Rev. B 81, 201303(R) (2010)

Electron counting in quantum dots

Authors: S. Gustavsson, R. Leturcq, M. Studer, I. Shorubalko, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude… ▽ More We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters. In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons. The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies. △ Less

Submitted 28 May, 2009; originally announced May 2009.

Journal ref: Surface Science Reports 64, 191 (2009)

Quantum dots investigated with charge detection techniques

Authors: T. Ihn, Simon Gustavsson, Urszula Gasser, Bruno Küng, Thomas Müller, Roland Schleser, Martin Sigrist, Ivan Shorubalko, Renaud Leturcq, Klaus Ensslin

Abstract: The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed the precise measurement of quantum dot shot noise at sub-femtoampere current levels, and the full counting statistics of the current. The technique can be app… ▽ More The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed the precise measurement of quantum dot shot noise at sub-femtoampere current levels, and the full counting statistics of the current. The technique can be applied to different material systems and holds promise for the future application in quantum dot based quantum information processing implementations. We review recent experiments employing this charge detection technique, including the self-interference of individual electrons and back-action phenomena. △ Less

Submitted 20 May, 2009; originally announced May 2009.

Universality of Bias- and Temperature-induced Dephasing in Ballistic Electronic Interferometers

Authors: Y. Yamauchi, M. Hashisaka, S. Nakamura, K. Chida, S. Kasai, T. Ono, R. Leturcq, K. Ensslin, D. C. Driscoll, A. C. Gossard, K. Kobayashi

Abstract: We performed a transport measurement in a ballistic Aharonov-Bohm ring and a Fabry-Perot type interferometer. In both cases we found that the interference signal is reversed at a certain bias voltage and that the visibility decays exponentially as a function of temperature, being in a strong analogy with recent reports on the electronic Mach-Zehnder interferometers. By analyzing the data includi… ▽ More We performed a transport measurement in a ballistic Aharonov-Bohm ring and a Fabry-Perot type interferometer. In both cases we found that the interference signal is reversed at a certain bias voltage and that the visibility decays exponentially as a function of temperature, being in a strong analogy with recent reports on the electronic Mach-Zehnder interferometers. By analyzing the data including those in the previous works, the energy scales that characterize the dephasing are found to be dominantly dependent on the interferometer size, implying the presence of a universal behavior in ballistic interferometers in both linear and non-linear transport regimes. △ Less

Submitted 14 April, 2009; v1 submitted 7 March, 2009; originally announced March 2009.

Comments: 4 pages, 4 figures, accepted for publication in PRB rapid comm

Journal ref: Phys. Rev. B 79, 161306(R) (2009)

Franck-Condon blockade in suspended carbon nanotube quantum dots

Authors: Renaud Leturcq, Christoph Stampfer, Kevin Inderbitzin, Lukas Durrer, Christofer Hierold, Eros Mariani, Maximilian G. Schultz, Felix von Oppen, Klaus Ensslin

Abstract: Understanding the influence of vibrational motion of the atoms on electronic transitions in molecules constitutes a cornerstone of quantum physics, as epitomized by the Franck-Condon principle of spectroscopy. Recent advances in building molecular-electronics devices and nanoelectromechanical systems open a new arena for studying the interaction between mechanical and electronic degrees of freed… ▽ More Understanding the influence of vibrational motion of the atoms on electronic transitions in molecules constitutes a cornerstone of quantum physics, as epitomized by the Franck-Condon principle of spectroscopy. Recent advances in building molecular-electronics devices and nanoelectromechanical systems open a new arena for studying the interaction between mechanical and electronic degrees of freedom in transport at the single-molecule level. The tunneling of electrons through molecules or suspended quantum dots has been shown to excite vibrational modes, or vibrons. Beyond this effect, theory predicts that strong electron-vibron coupling dramatically suppresses the current flow at low biases, a collective behaviour known as Franck-Condon blockade. Here we show measurements on quantum dots formed in suspended single-wall carbon nanotubes revealing a remarkably large electron-vibron coupling and, due to the high quality and unprecedented tunability of our samples, admit a quantitative analysis of vibron-mediated electronic transport in the regime of strong electron-vibron coupling. This allows us to unambiguously demonstrate the Franck-Condon blockade in a suspended nanostructure. The large observed electron-vibron coupling could ultimately be a key ingredient for the detection of quantized mechanical motion. It also emphasizes the unique potential for nanoelectromechanical device applications based on suspended graphene sheets and carbon nanotubes. △ Less

Submitted 19 December, 2008; originally announced December 2008.

Comments: 7 pages, 3 figures

Journal ref: Nature Physics 5, 327-331 (2009)

Dynamics of coupled spins in quantum dots with strong spin-orbit interaction

Authors: A. Pfund, I. Shorubalko, K. Ensslin, R. Leturcq

Abstract: We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pumping single electrons through a Pauli spin-blockade configuration allowed to probe the dynamics of the two coupled spins via their influence on the pumped current. We o… ▽ More We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pumping single electrons through a Pauli spin-blockade configuration allowed to probe the dynamics of the two coupled spins via their influence on the pumped current. We observed spin-relaxation with a magnetic field dependence different from GaAs dots, which can be explained by spin-orbit interaction. Oscillations were detected for times shorter than the relaxation time, which we attribute to coherent evolution of the spin states. △ Less

Submitted 23 July, 2008; originally announced July 2008.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 79, 121306(R) (2009)

Time-resolved detection of single-electron interference

Authors: S. Gustavsson, R. Leturcq, M. Studer, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform time-resolved measurements of single-electron tunneling. With increased bias voltage, the quantum point contact exerts a back-action on the interferometer leading to… ▽ More We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform time-resolved measurements of single-electron tunneling. With increased bias voltage, the quantum point contact exerts a back-action on the interferometer leading to decoherence. We attribute this to emission of radiation from the quantum point contact, which drives non-coherent electronic transitions in the quantum dots. △ Less

Submitted 11 July, 2008; originally announced July 2008.

Comments: Supporting Information Available: http://www.nanophys.ethz.ch/gallery/movies/SingleElectronAB/index.htm contains a movie showing how the interference pattern builds up in real-time as electrons pass through the structure one-by-one

Journal ref: Nano Lett. 8, 2547 (2008)

Detecting single-electron tunneling involving virtual processes in real time

Authors: S. Gustavsson, M. Studer, R. Leturcq, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We use time-resolved charge detection techniques to probe virtual tunneling processes in a double quantum dot. The process involves an energetically forbidden state separated by an energy $δ$ from the Fermi energy in the leads. The non-zero tunneling probability can be interpreted as cotunneling, which occurs as a direct consequence of time-energy uncertainty. For small energy separation the ele… ▽ More We use time-resolved charge detection techniques to probe virtual tunneling processes in a double quantum dot. The process involves an energetically forbidden state separated by an energy $δ$ from the Fermi energy in the leads. The non-zero tunneling probability can be interpreted as cotunneling, which occurs as a direct consequence of time-energy uncertainty. For small energy separation the electrons in the quantum dots delocalize and form molecular states. In this regime we establish the experimental equivalence between cotunneling and sequential tunneling into molecular states for electron transport in a double quantum dot. Finally, we investigate inelastic cotunneling processes involving excited states of the quantum dots. Using the time-resolved charge detection techniques, we are able to extract the shot noise of the current in the cotunneling regime. △ Less

Submitted 13 October, 2008; v1 submitted 22 May, 2008; originally announced May 2008.

Journal ref: PRB 78, 155309 (2008)

Detecting THz current fluctuations in a quantum point contact using a nanowire quantum dot

Authors: S. Gustavsson, I. Shorubalko, R. Leturcq, T. Ihn, K. Ensslin, S. Schön

Abstract: We use a nanowire quantum dot to probe high-frequency current fluctuations in a nearby quantum point contact. The fluctuations drive charge transitions in the quantum dot, which are measured in real-time with single-electron detection techniques. The quantum point contact (GaAs) and the quantum dot (InAs) are fabricated in different material systems, which indicates that the interactions are med… ▽ More We use a nanowire quantum dot to probe high-frequency current fluctuations in a nearby quantum point contact. The fluctuations drive charge transitions in the quantum dot, which are measured in real-time with single-electron detection techniques. The quantum point contact (GaAs) and the quantum dot (InAs) are fabricated in different material systems, which indicates that the interactions are mediated by photons rather than phonons. The large energy scales of the nanowire quantum dot allow radiation detection in the long-wavelength infrared regime. △ Less

Submitted 9 May, 2008; originally announced May 2008.

Journal ref: Phys. Rev. B 78, 035324 (2008)

Measuring current by counting electrons in a nanowire quantum dot

Authors: S. Gustavsson, I. Shorubalko, R. Leturcq, S. Schön, K. Ensslin

Abstract: We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting compare well to a direct measurements of the quantum dot current, when taking the finite bandwidth of the detector into account. The ability to detect single… ▽ More We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting compare well to a direct measurements of the quantum dot current, when taking the finite bandwidth of the detector into account. The ability to detect single electrons also opens up possibilities for manipulating and detecting individual spins in nanowire quantum dots. △ Less

Submitted 21 December, 2007; originally announced December 2007.

Journal ref: Appl. Phys. Lett. 92, 152101 (2008)

Self-aligned charge read-out for InAs nanowire quantum dots

Authors: I. Shorubalko, R. Leturcq, A. Pfund, D. Tyndall, R. Krischek, S. Schon, K. Ensslin

Abstract: A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact which is used as a charge detector. The addition of one electron to… ▽ More A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact which is used as a charge detector. The addition of one electron to the quantum dot leads to a change of the conductance of the charge detector by typically 20%. The charge sensitivity of the detector is used to measure Coulomb diamonds as well as charging events outside the dot. Charge stability diagrams measured by transport through the quantum dot and charge detection merge perfectly. △ Less

Submitted 18 March, 2008; v1 submitted 11 December, 2007; originally announced December 2007.

Comments: 11 pages, 3 figures

Journal ref: Nanoletters 8, 382 (2008)

Hysteretic magnetotransport in p-type AlGaAs heterostructures with In/Zn/Au ohmic contacts

Authors: B. Grbic, R. Leturcq, T. Ihn, K. Ensslin, G. Blatter, D. Reuter, A. D. Wieck

Abstract: The two-terminal magneto-conductance of a hole gas in C-doped AlGaAs/GaAs heterostructures with ohmic contacts consisting of alloyed In/Zn/Au displays a pronounced hysteresis of the conductance around zero magnetic field. The hysteresis disappears above magnetic fields of around 0.5 T and temperatures above 300 mK. For magnetic fields below 10 mT we observe a pronounced dip in the magneto-conduc… ▽ More The two-terminal magneto-conductance of a hole gas in C-doped AlGaAs/GaAs heterostructures with ohmic contacts consisting of alloyed In/Zn/Au displays a pronounced hysteresis of the conductance around zero magnetic field. The hysteresis disappears above magnetic fields of around 0.5 T and temperatures above 300 mK. For magnetic fields below 10 mT we observe a pronounced dip in the magneto-conductance. We tentatively discuss these experimental observations in the light of superconductivity of the ohmic contacts. △ Less

Submitted 5 November, 2007; originally announced November 2007.

Comments: 4+ pages, 3 figures;

Journal ref: Phys. Rev. B 77, 245307 (2008)

Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures

Authors: Boris Grbic, Renaud Leturcq, Thomas Ihn, Klaus Ensslin, Dirk Reuter, Andreas D. Wieck

Abstract: We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: a beating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of th… ▽ More We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: a beating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of the two spin-split subbands, and a weak anti-localization dip in the magnetoresistance. The spin-orbit induced splitting of the heavy hole subband at the Fermi level is determined to be around 30% of the total Fermi energy. The phase coherence length of holes of around 2.5 $μ$m at a temperature of 70 mK, extracted from weak anti-localization measurements, is promissing for the fabrication of phase-coherent p-type nanodevices. △ Less

Submitted 5 November, 2007; originally announced November 2007.

Comments: 8 pages, 6 figures;

Journal ref: Phys. Rev. B 77, 125312 (2008)

Aharonov-Bohm oscillations in p-type GaAs quantum rings

Authors: Boris Grbic, Renaud Leturcq, Thomas Ihn, Klaus Ensslin, Dirk Reuter, Andreas D. Wieck

Abstract: We have explored phase coherent transport of holes in two p-type GaAs quantum rings with orbital radii 420 nm and 160 nm fabricated with AFM oxidation lithography. Highly visible Aharonov-Bohm (AB) oscillations are measured in both rings, with an amplitude of the oscillations exceeding 10% of the total resistance in the case of the ring with a radius of 160 nm. Beside the h/e oscillations, we re… ▽ More We have explored phase coherent transport of holes in two p-type GaAs quantum rings with orbital radii 420 nm and 160 nm fabricated with AFM oxidation lithography. Highly visible Aharonov-Bohm (AB) oscillations are measured in both rings, with an amplitude of the oscillations exceeding 10% of the total resistance in the case of the ring with a radius of 160 nm. Beside the h/e oscillations, we resolve the contributions from higher harmonics of the AB oscillations. The observation of a local resistance minimum at B=0 T in both rings is a signature of the destructive interference of the holes' spins. We show that this minimum is related to the minimum in the h/2e oscillations. △ Less

Submitted 3 November, 2007; originally announced November 2007.

Comments: Proceedings of EP2DS-17, Genova 2007; Accepted for Physica E; 3 pages, 3 figures

Journal ref: Physica E 40, 1273 (2008)

Hole transport in p-type GaAs quantum dots and point contacts

Authors: B. Grbic, R. Leturcq, T. Ihn, K. Ensslin, D. Reuter, A. D. Wieck

Abstract: Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances… ▽ More Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of excited states in Coulomb diamond measurements indicates that the dots are in the multi-level transport regime. △ Less

Submitted 3 November, 2007; originally announced November 2007.

Comments: Proceedings of ICPS-28, Vienna 2006; 2 pages, 2 figures

Journal ref: AIP Conf. Proc. 893, 777 (2007)

Pauli spin-blockade in an InAs nanowire double quantum dot

Authors: A. Pfund, I. Shorubalko, R. Leturcq, K. Ensslin

Abstract: We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and the large singlet-triplet splitting, which can be measured and tuned by a gate voltage. We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and the large singlet-triplet splitting, which can be measured and tuned by a gate voltage. △ Less

Submitted 20 September, 2007; originally announced September 2007.

Comments: EP2DS-17 Proceedings, 3 Pages, 3 Figures

Journal ref: Physica E 40, 1279 (2008)

Frequency-selective single photon detection using a double quantum dot

Authors: S. Gustavsson, M. Studer, R. Leturcq, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily… ▽ More We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily tuned with gate voltages. Using time-resolved charge detection techniques, we can directly relate the detection of a tunneling electron to the absorption of a single photon. △ Less

Submitted 22 May, 2007; originally announced May 2007.

Journal ref: Phys. Rev. Lett. 99, 206804 (2007)

Aharonov-Bohm oscillations in the presence of strong spin-orbit interactions

Authors: Boris Grbic, Renaud Leturcq, Thomas Ihn, Klaus Ensslin, Dirk Reuter, Andreas D. Wieck

Abstract: We have measured highly visible Aharonov-Bohm (AB) oscillations in a ring structure defined by local anodic oxidation on a p-type GaAs heterostructure with strong spin-orbit interactions. Clear beating patterns observed in the raw data can be interpreted in terms of a spin geometric phase. Besides h/e oscillations, we resolve the contributions from the second harmonic of AB oscillations and also… ▽ More We have measured highly visible Aharonov-Bohm (AB) oscillations in a ring structure defined by local anodic oxidation on a p-type GaAs heterostructure with strong spin-orbit interactions. Clear beating patterns observed in the raw data can be interpreted in terms of a spin geometric phase. Besides h/e oscillations, we resolve the contributions from the second harmonic of AB oscillations and also find a beating in these h/2e oscillations. A resistance minimum at B=0T, present in all gate configurations, is the signature of destructive interference of the spins propagating along time-reversed paths. △ Less

Submitted 30 October, 2007; v1 submitted 10 April, 2007; originally announced April 2007.

Comments: 4 pages, 3 figures, published version

Journal ref: Phys. Rev. Lett. 99, 176803 (2007)

Spin state mixing in InAs double quantum dots

Authors: A. Pfund, I. Shorubalko, K. Ensslin, R. Leturcq

Abstract: We quantify the contributions of hyperfine and spin-orbit mediated singlet-triplet mixing in weakly coupled InAs quantum dots by electron transport spectroscopy in the Pauli spin blockade regime. In contrast to double dots in GaAs, the spin-orbit coupling is found to be more than two orders of magnitudes larger than the hyperfine mixing energy. It is already effective at magnetic fields of a few… ▽ More We quantify the contributions of hyperfine and spin-orbit mediated singlet-triplet mixing in weakly coupled InAs quantum dots by electron transport spectroscopy in the Pauli spin blockade regime. In contrast to double dots in GaAs, the spin-orbit coupling is found to be more than two orders of magnitudes larger than the hyperfine mixing energy. It is already effective at magnetic fields of a few mT, where deviations from hyperfine mixing are observed. △ Less

Submitted 7 April, 2007; originally announced April 2007.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 76, 161308(R) (2007)

Conditional statistics of electron transport in interacting nanoscale conductors

Authors: Eugene V. Sukhorukov, Andrew N. Jordan, Simon Gustavsson, Renaud Leturcq, Thomas Ihn, Klaus Ensslin

Abstract: Interactions between nanoscale semiconductor structures form the basis for charge detectors in the solid state. Recent experimental advances have demonstrated the on-chip detection of single electron transport through a quantum dot (QD). The discreteness of charge in units of e leads to intrinsic fluctuations in the electrical current, known as shot noise. To measure these single-electron fluctu… ▽ More Interactions between nanoscale semiconductor structures form the basis for charge detectors in the solid state. Recent experimental advances have demonstrated the on-chip detection of single electron transport through a quantum dot (QD). The discreteness of charge in units of e leads to intrinsic fluctuations in the electrical current, known as shot noise. To measure these single-electron fluctuations a nearby coherent conductor, called a quantum point contact (QPC), interacts with the QD and acts as a detector. An important property of the QPC charge detector is noninvasiveness: the system physically affects the detector, not visa-versa. Here we predict that even for ideal noninvasive detectors such as the QPC, when a particular detector result is observed, the system suffers an informational backaction, radically altering the statistics of transport through the QD as compared to the unconditional shot noise. We develop a theoretical model to make predictions about the joint current probability distributions and conditional transport statistics. The experimental findings reported here demonstrate the reality of informational backaction in nanoscale systems as well as a variety of new effects, such as conditional noise enhancement, which are in essentially perfect agreement with our model calculations. This type of switching telegraph process occurs abundantly in nature, indicating that these results are applicable to a wide variety of systems. △ Less

Submitted 29 January, 2007; originally announced January 2007.

Comments: 16 pages, 3 figures, to appear in Nature Physics

Journal ref: Nature Physics 3, 243 - 247 (2007)

Suppression of spin relaxation in an InAs nanowire double quantum dot

Authors: A. Pfund, I. Shorubalko, K. Ensslin, R. Leturcq

Abstract: We investigate the triplet-singlet relaxation in a double quantum dot defined by top-gates in an InAs nanowire. In the Pauli spin blockade regime, the leakage current can be mainly attributed to spin relaxation. While at weak and strong inter-dot coupling relaxation is dominated by two individual mechanisms, the relaxation is strongly reduced at intermediate coupling and finite magnetic field. I… ▽ More We investigate the triplet-singlet relaxation in a double quantum dot defined by top-gates in an InAs nanowire. In the Pauli spin blockade regime, the leakage current can be mainly attributed to spin relaxation. While at weak and strong inter-dot coupling relaxation is dominated by two individual mechanisms, the relaxation is strongly reduced at intermediate coupling and finite magnetic field. In addition we observe a charateristic bistability of the spin-non conserving current as a function of magnetic field. We propose a model where these features are explained by the polarization of nuclear spins enabled by the interplay between hyperfine and spin-orbit mediated relaxation. △ Less

Submitted 3 January, 2007; originally announced January 2007.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 99, 036801 (2007)

Top-gate defined double quantum dots in InAs nanowires

Authors: A. Pfund, I. Shorubalko, R. Leturcq, K. Ensslin

Abstract: We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the… ▽ More We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the formation of a molecular state extending over both dots. The excitation spectra of the individual dots are observable by their signatures in the nonlinear transport. △ Less

Submitted 19 September, 2006; originally announced September 2006.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 89, 252106 (2006)

Tunable few electron quantum dots in InAs nanowires

Authors: I. Shorubalko, A. Pfund, R. Leturcq, M. T. Borgström, F. Gramm, E. Müller, E. Gini, K. Ensslin

Abstract: Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using thr… ▽ More Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs. △ Less

Submitted 19 September, 2006; originally announced September 2006.

Comments: 8 pages, 4 figures

Journal ref: Nanotechnology 18, 044014 (2007)

Measurements of higher order noise correlations in a quantum dot with a finite bandwidth detector

Authors: S. Gustavsson, R. Leturcq, T. Ihn, K. Ensslin, M. Reinwald, W. Wegscheider

Abstract: We present measurements of the fourth and fifth cumulants of the distribution of transmitted charge in a tunable quantum dot. We investigate how the measured statistics is influenced by the finite bandwidth of the detector and by the finite measurement time. By including the detector when modeling the system, we use the theory of full counting statistics to calculate the noise levels for the com… ▽ More We present measurements of the fourth and fifth cumulants of the distribution of transmitted charge in a tunable quantum dot. We investigate how the measured statistics is influenced by the finite bandwidth of the detector and by the finite measurement time. By including the detector when modeling the system, we use the theory of full counting statistics to calculate the noise levels for the combined system. The predictions of the finite-bandwidth model are in good agreement with measured data. △ Less

Submitted 22 February, 2007; v1 submitted 7 July, 2006; originally announced July 2006.

Journal ref: Phys. Rev. B 75, 075314 (2007)

Counting statistics and super-Poissonian noise in a quantum dot

Authors: S. Gustavsson, R. Leturcq, B. Simovic, R. Schleser, P. Studerus, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the dot to source and drain contacts could be determined individually. In the high bias regime, the method was used to probe excited states of the dot. Furthermore,… ▽ More We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the dot to source and drain contacts could be determined individually. In the high bias regime, the method was used to probe excited states of the dot. Furthermore, we have detected bunching of electrons, leading to super-Poissonian noise. We have used the framework of the full counting statistics (FCS) to model the experimental data. The existence of super-Poissonian noise suggests a long relaxation time for the involved excited state, which could be related to the spin relaxation time. △ Less

Submitted 12 December, 2006; v1 submitted 15 May, 2006; originally announced May 2006.

Journal ref: Phys. Rev. B, 74, 195305 (2006)

Two-subband quantum Hall effect in parabolic quantum wells

Authors: C. Ellenberger, B. Simovic, R. Leturcq, T. Ihn, S. E. Ulloa, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum Hall plateaus. These effects set in with the occupation of the second subband. We discuss our observations in the context of single-particle Landau fan charts… ▽ More The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum Hall plateaus. These effects set in with the occupation of the second subband. We discuss our observations in the context of single-particle Landau fan charts of a two-subband system empirically extended by a density dependent subband separation and an enhanced spin-splitting g*. △ Less

Submitted 10 February, 2006; originally announced February 2006.

Comments: 5 pages, submitted

Journal ref: Phys. Rev. B 74, 195313 (2006)

Design of Q-Band loop-gap resonators at frequencies 34-36 GHz for single electron spin spectroscopy in semiconductor nanostructures

Authors: B. Simovic, P. Studerus, S. Gustavsson, R. Leturcq, K. Ensslin, R. Schuhmann, J. Forrer, A. Schweiger

Abstract: We report on the design of loop-gap resonators (LGR) operating in the frequency range 34-36 GHz with the goal to achieve single electron spin resonance (ESR) in quantum dot nanostructures. We present a comprehensive study of the magnetic field strength and the spatial distribution of the electric and magnetic fields in the resonator by means of experiments and numerical simulations. We report on the design of loop-gap resonators (LGR) operating in the frequency range 34-36 GHz with the goal to achieve single electron spin resonance (ESR) in quantum dot nanostructures. We present a comprehensive study of the magnetic field strength and the spatial distribution of the electric and magnetic fields in the resonator by means of experiments and numerical simulations. △ Less

Submitted 2 February, 2006; originally announced February 2006.

Comments: 25 pages, submitted

Journal ref: Rev. Sc. Instr. 77, 064702 (2006)

Magnetic field symmetry and phase rigidity of the nonlinear conductance in a ring

Authors: R. Leturcq, D. Sanchez, G. Gotz, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We have performed nonlinear transport measurements as a function of a perpendicular magnetic field in a semiconductor Aharonov-Bohm ring connected to two leads. While the voltage-symmetric part of the conductance is symmetric in magnetic field, the voltage-antisymmetric part of the conductance is not symmetric. These symmetry relations are compatible with the scattering theory for nonlinear meso… ▽ More We have performed nonlinear transport measurements as a function of a perpendicular magnetic field in a semiconductor Aharonov-Bohm ring connected to two leads. While the voltage-symmetric part of the conductance is symmetric in magnetic field, the voltage-antisymmetric part of the conductance is not symmetric. These symmetry relations are compatible with the scattering theory for nonlinear mesoscopic transport. The observed asymmetry can be tuned continuously by changing the gate voltages near the arms of the ring, showing that the phase of the nonlinear conductance in a two-terminal interferometer is not rigid, in contrast to the case for the linear conductance. △ Less

Submitted 5 April, 2006; v1 submitted 25 November, 2005; originally announced November 2005.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 96, 126801 (2006)

1/f noise in a dilute GaAs two-dimensional hole system in the insulating phase

Authors: G. Deville, R. Leturcq, D. L'Hote, R. Tourbot, C. J. Mellor, M. Henini

Abstract: We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradi… ▽ More We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradict the standard description of independent particles in the strong localization regime. On the contrary, they agree with the percolation picture suggested by higher density results. The physical nature of the system could be a mixture of a conducting and an insulating phase. We compare our results with those of composite thin films. △ Less

Submitted 15 November, 2005; originally announced November 2005.

Comments: 4 pages, 3 figures; to appear in Physica E (EP2DS-16 proceedings)

Single-hole transistor in p-type GaAs/AlGaAs heterostructures

Authors: Boris Grbic, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, Andreas D. Wieck

Abstract: A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the… ▽ More A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multi-level transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed. △ Less

Submitted 21 October, 2005; v1 submitted 21 October, 2005; originally announced October 2005.

Comments: 4 pages, 5 figures

Journal ref: Appl. Phys. Lett. 87, 232108 (2005)

Counting statistics of single-electron transport in a quantum dot

Authors: S. Gustavsson, R. Leturcq, B. Simovic, R. Schleser, T. Ihn, P. Studerus, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: We have measured the full counting statistics (FCS) of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact (QPC). This method gives direct access to the distribution function of current fluctuations. Suppression of the second moment (related to the shot noise) and the third moment (related to the asymmetry of t… ▽ More We have measured the full counting statistics (FCS) of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact (QPC). This method gives direct access to the distribution function of current fluctuations. Suppression of the second moment (related to the shot noise) and the third moment (related to the asymmetry of the distribution) in a tunable semiconductor QD is demonstrated experimentally. With this method we demonstrate the ability to measure very low current and noise levels. △ Less

Submitted 2 March, 2006; v1 submitted 11 October, 2005; originally announced October 2005.

Journal ref: Phys. Rev. Lett. 96, 076605 (2006)

1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs

Authors: G. Deville, R. Leturcq, D. L'Hote, R. Tourbot, C. J. Mellor, M. Henini

Abstract: Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations we… ▽ More Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations were used. The normalized noise power SR/R2 increases strongly when the hole density or the temperature are decreased. The temperature dependence is steeper at the lowest densities. This contradicts the predictions of the modulation approach in the strong localization hopping transport regime. The hypothesis of a second order phase transition or percolation transition at a density below that of the MIT is thus reinforced. △ Less

Submitted 6 October, 2005; originally announced October 2005.

Comments: PDF, 4 pages, 2 figures, in: Proceedings of the 18th International Conference on Noise and Fluctuations (ICNF2005), September 19-23, 2005, Salamanca, Spain

Report number: SPEC-S05/043 [http://www-drecam.cea.fr/spec/articles/S05/043]

Journal ref: AIP Conference Proceedings 780, 139-142 (2005)

Probing the Kondo density of states in a three-terminal quantum ring

Authors: R. Leturcq, L. Schmid, K. Ensslin, Y. Meir, D. C. Driscoll, A. C. Gossard

Abstract: We have measured the Kondo effect in a quantum ring connected to three terminals. In this configuration non-linear transport measurements allow to check which lead contributes to the Kondo density of states (DOS) and which does not. When the ring is connected to two strongly and one weakly coupled leads, the measurement of the differential conductance through the weakly coupled lead allows to pr… ▽ More We have measured the Kondo effect in a quantum ring connected to three terminals. In this configuration non-linear transport measurements allow to check which lead contributes to the Kondo density of states (DOS) and which does not. When the ring is connected to two strongly and one weakly coupled leads, the measurement of the differential conductance through the weakly coupled lead allows to probe directly the Kondo DOS. In addition, by applying a bias between the two strongly coupled leads, we show the splitting of the out-of-equilibrium DOS. △ Less

Submitted 4 May, 2005; originally announced May 2005.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 95, 126603 (2005)

Resistance noise scaling in a 2D system in GaAs

Authors: R. Leturcq, G. Deville, D. L'Hote, R. Tourbot, C. J. Mellor, M. Henini

Abstract: The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B=0), and deep in the insulating regime. The two measurement methods used are described: I or V fixed, and measurement of resp. V or I fluctuations. The normalized noise magnitude SR/R^2 increases st… ▽ More The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B=0), and deep in the insulating regime. The two measurement methods used are described: I or V fixed, and measurement of resp. V or I fluctuations. The normalized noise magnitude SR/R^2 increases strongly when the hole density is decreased, and its temperature (T) dependence goes from a slight increase with T at the largest densities, to a strong decrease at low density. We find that the noise magnitude scales with the resistance, SR /R^2 ~ R^2.4. Such a scaling is expected for a second order phase transition or a percolation transition. The possible presence of such a transition is investigated by studying the dependence of the conductivity as a function of the density. This dependence is consistent with a critical behavior close to a critical density p* lower than the usual MIT critical density pc. △ Less

Submitted 3 December, 2004; originally announced December 2004.

Comments: 13 pages, 8 figures, Proceedings of SPIE: Fluctuations and noise in materials, D. Popovic, M.B. Weissman, Z.A. Racz Eds., Vol. 5469, pp. 101-113, Mspalomas, Spain, 2004

Multi-terminal transport through a quantum dot in the Coulomb blockade regime

Authors: R. Leturcq, D. Graf, T. Ihn, K. Ensslin, D. D. Driscoll, A. C. Gossard

Abstract: Three terminal tunnelling experiments on quantum dots in the Coulomb blockade regime allow a quantitative determination of the coupling strength of individual quantum states to the leads. Exploiting this insight we have observed independent fluctuations of the coupling strengths as a function of electron number and magnetic field due to changes in the shape of the wave function in the dot. Such… ▽ More Three terminal tunnelling experiments on quantum dots in the Coulomb blockade regime allow a quantitative determination of the coupling strength of individual quantum states to the leads. Exploiting this insight we have observed independent fluctuations of the coupling strengths as a function of electron number and magnetic field due to changes in the shape of the wave function in the dot. Such a detailed understanding and control of the dot-lead coupling can be extended to more complex systems such as coupled dots, and is essential for building functional quantum electronic systems. △ Less

Submitted 2 June, 2004; originally announced June 2004.

Comments: 7 pages, 4 figures

Journal ref: Europhys. Lett. 67 (2004) 439-445

Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs

Authors: R. Leturcq, D. L'Hote, R. Tourbot, C. J. Mellor, M. Henini

Abstract: We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the hole density p_s is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p_s. The noise… ▽ More We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the hole density p_s is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p_s. The noise scales with the resistance, $S_R/R^2 \sim R^{2.4}$, as for a second order phase transition such as a percolation transition. The p_s dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p* which is lower than the observed MIT critical density p_c. △ Less

Submitted 13 February, 2003; v1 submitted 14 January, 2003; originally announced January 2003.

Comments: 4 pages, 4 figures, to be published in Phys. Rev. Lett

Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

Authors: R. Leturcq, D. L'Hote, R. Tourbot, V. Senz, U. Gennser, T. Ihn, K. Ensslin, G. Dehlinger, D. Grützmacher

Abstract: We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible w… ▽ More We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $ρ(E)$ dependence and the $E$-field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true $E$-field scaling and extract the ratio of the QPT characteristic lengths. △ Less

Submitted 23 July, 2001; originally announced July 2001.

Comments: latex ChauCorSub.tex, 5 files, 4 figures, 4 pages submitted to Phys. Rev. Lett

Report number: SPEC-S01/025