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Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Authors:
Anton Faustmann,
Patrick Liebisch,
Benjamin Bennemann,
Pujitha Perla,
Mihail Ion Lepsa,
Alexander Pawlis,
Detlev Grützmacher,
Joachim Knoch,
Thomas Schäpers
Abstract:
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 n…
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Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 nm. The gate fingers have low gate leakage. As a proof of principle, we fabricated quantum dot devices using InAs nanowires placed on the gate fingers. These devices exhibit single electron tunneling and Coulomb blockade.
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Submitted 29 November, 2024;
originally announced November 2024.
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Semiconductor membranes for electrostatic exciton trapping in optically addressable quantum transport devices
Authors:
Thomas Descamps,
Feng Liu,
Sebastian Kindel,
René Otten,
Tobias Hangleiter,
Chao Zhao,
Mihail Ion Lepsa,
Julian Ritzmann,
Arne Ludwig,
Andreas D. Wieck,
Beata E. Kardynał,
Hendrik Bluhm
Abstract:
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example, interfacing stationary solid-state qubits with photonic quantum states would open a new pathway towards the realization of a quantum network with extended quantum pr…
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Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example, interfacing stationary solid-state qubits with photonic quantum states would open a new pathway towards the realization of a quantum network with extended quantum processing capacity in each node. While gated devices allow very flexible confinement of electrons or holes, the confinement of excitons without some element of self-assembly is much harder. To address this limitation, we introduce a technique to realize exciton traps in quantum wells via local electric fields by thinning a heterostructure down to a 220 nm thick membrane. We show that mobilities over $1 \times 10^{6}$ cm$^{2}$V$^{-1}$s$^{-1}$ can be retained and that quantum point contacts and Coulomb oscillations can be observed on this structure, which implies that the thinning does not compromise the heterostructure quality. Furthermore, the local lowering of the exciton energy via the quantum-confined Stark effect is confirmed, thus forming exciton traps. These results lay the technological foundations for devices like single photon sources, spin photon interfaces and eventually quantum network nodes in GaAs quantum wells, realized entirely with a top-down fabrication process.
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Submitted 9 November, 2022; v1 submitted 15 July, 2022;
originally announced July 2022.
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Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots
Authors:
David Fricker,
Paola Atkinson,
Mihail I Lepsa,
Zheng Zeng,
András Kovács,
Lidia Kibkalo,
Rafal E Dunin-Borkowski,
Beata E. Kardynał
Abstract:
Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit their performance. Here, we investigate wetting layer formation during quantum dot growth by the alternative droplet epitaxy technique. We use a combination of p…
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Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit their performance. Here, we investigate wetting layer formation during quantum dot growth by the alternative droplet epitaxy technique. We use a combination of photoluminescence excitation spectroscopy, lifetime measurements, and transmission electron microscopy to identify the presence of an InGaAs wetting layer in these droplet epitaxy quantum dots, even in the absence of distinguishable wetting layer photoluminescence. We observe that increasing the amount of Ga deposited on a GaAs (100) surface prior to the growth of InGaAs quantum dots leads to a significant reduction in the emission wavelength of the wetting layer to the point where it can no longer be distinguished from the GaAs acceptor peak emission in photoluminescence measurements.
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Submitted 4 June, 2022;
originally announced June 2022.
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Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout
Authors:
Patrick Zellekens,
Russell Deacon,
Pujitha Perla,
Detlev Grützmacher,
Mihail Ion Lepsa,
Thomas Schäpers,
Koji Ishibashi
Abstract:
Josephson junctions based on semiconductor nanowires are potential building blocks for electrically tunable qubit structures, e.g. the gatemon or the Andreev qubit. However, an actual realization requires the thorough investigation of the intrinsic excitation spectrum. Here, we demonstrate the fabrication of low-loss superconducting microwave circuits that combine high quality factors with a well-…
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Josephson junctions based on semiconductor nanowires are potential building blocks for electrically tunable qubit structures, e.g. the gatemon or the Andreev qubit. However, an actual realization requires the thorough investigation of the intrinsic excitation spectrum. Here, we demonstrate the fabrication of low-loss superconducting microwave circuits that combine high quality factors with a well-controlled gate architecture by utilizing a flip-chip approach. This platform is then used to perform single-tone and two-tone experiments on Andreev states in in-situ grown InAs/Al core/half-shell nanowires with shadow mask defined Josephson junctions. In gate-controlled and flux-biased spectroscopic measurements we find clear signatures of single quasiparticle as well as quasiparticle pair transitions between discrete Andreev bound states mediated by photon-absorption. Our experimental findings are supported by simulations that show that the junction resides in the intermediate channel length regime.
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Submitted 16 December, 2021;
originally announced December 2021.
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Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
Authors:
L. R. Schreiber,
C. Schwark,
G. Güntherodt,
M. Lepsa,
C. Adelmann,
C. J. Palmstrøm,
X. Lou,
P. A. Crowell,
B. Beschoten
Abstract:
The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin…
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The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin packets, which are injected across an Fe/GaAs Schottky barrier into $n$-GaAs. By means of time-resolved Faraday rotation, we demonstrate phase coherence by the observation of multiple Larmor precession cycles for current pulse widths down to 500 ps at 17 K. We show that the current pulses are broadened by the charging and discharging time of the Schottky barrier. At high frequencies, the observable spin coherence is limited only by the finite band width of the current pulses, which is on the order of 2 GHz. These results therefore demonstrate that all-electrical injection and phase control of electron spin packets at microwave frequencies is possible in metallic-ferromagnet/semiconductor heterostructures.
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Submitted 17 November, 2021;
originally announced November 2021.
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Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Authors:
Pujitha Perla,
Anton Faustmann,
Sebastian Koelling,
Patrick Zellekens,
Russell Deacon,
H. Aruni Fonseka,
Jonas Kölzer,
Yuki Sato,
Ana M. Sanchez,
Oussama Moutanabbir,
Koji Ishibashi,
Detlev Grützmacher,
Mihail Ion Lepsa,
Thomas Schäpers
Abstract:
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were als…
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Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can be tuned either by field-effect or doping. We investigated a series of InAs nanowires which conductivity has been modified by n-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined with atomic probe tomography to obtain information about the local incorporation of Te atoms. It was found that the Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. The efficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, a Josephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed a clear increase of the critical current with increase of the dopant concentration.
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Submitted 18 October, 2021;
originally announced October 2021.
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Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation
Authors:
Pujitha Perla,
H. Aruni Fonseka,
Patrick Zellekens,
Russell Deacon,
Yisong Han,
Jonas Kölzer,
Timm Mörstedt,
Benjamin Bennemann,
Koji Ishibashi,
Detlev Grützmacher,
Ana M. Sanchez,
Mihail Ion Lepsa,
Thomas Schäpers
Abstract:
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shad…
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Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowires grown selectively on two adjacent tilted Si (111) facets and crossing each other at a small distance. The upper wire relative to the deposition source acts as a shadow mask determining the gap of the superconducting electrodes on the lower nanowire. Electron microscopy measurements show that the fully in-situ fabrication method gives a clean InAs/Nb interface. A clear Josephson supercurrent is observed in the current-voltage characteristics, which can be controlled by a bottom gate. The excess current of 0.68 indicates a high junction transparency. Under microwave radiation, pronounced integer Shapiro steps are observed suggesting a sinusoidal current-phase relation. Owing to the large critical field of Nb, the Josephson supercurrent can be maintained to magnetic fields exceeding 1 T. Our results show that in-situ prepared Nb/InAs nanowire contacts are very interesting candidates for superconducting quantum circuits requiring large magnetic fields.
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Submitted 12 November, 2020;
originally announced November 2020.
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Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
Authors:
Patrick Zellekens,
Russell Deacon,
Pujitha Perla,
H. Aruni Fonseka,
Timm Moerstedt,
Steven A. Hindmarsh,
Benjamin Bennemann,
Florian Lentz,
Mihail Ion Lepsa,
Ana M. Sanchez,
Detlev Grützmacher,
Koji Ishibashi,
Thomas Schäpers
Abstract:
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be…
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Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is essential that the superconductor-semiconductor interface is as clean as possible. Furthermore, the shape and dimensions of the superconducting electrodes needs to be precisely controlled. We fabricated self-defined InAs/Al core/shell nanowire junctions by a fully in-situ approach, which meet all these criteria. Transmission electron microscopy measurements confirm the sharp and clean interface between the nanowire and the in-situ deposited Al electrodes which were formed by means of shadow evaporation. Furthermore, we report on tunnel spectroscopy, gate and magnetic field-dependent transport measurements. The achievable short junction lengths,the observed hard-gap and the magnetic field robustness make this new hybrid structure very attractive for applications which rely on a precise control of the number of sub-gap states, like Andreev qubits or topological systems.
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Submitted 29 July, 2020; v1 submitted 21 April, 2020;
originally announced April 2020.
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Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires
Authors:
P. Zellekens,
N. Demarina,
J. Janßen,
T. Rieger,
M. I. Lepsa,
P. Perla,
G. Panaitov,
H. Lüth,
D. Grützmacher,
T. Schäpers
Abstract:
Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--…
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Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--Poisson solver revealed that the ambipolar characteristics originate from a Fermi level dependent occupation of hole and electron states within the approximately circular quantum well formed in the InSb shell. By applying a perpendicular magnetic field with respect to the nanowire axis, conductance fluctuations were observed, which are used to extract the phase-coherence length. By averaging the magneto-conductance traces at different back-gate voltages, weak antilocalization features are resolved. Regular flux-periodic conductance oscillations are measured when an axial magnetic field is applied. These oscillations are attributed to closed-loop quantized states located in the InSb shell which shift their energetic position periodically with the magnetic flux. Possible reasons for experimentally observed variations in the oscillation patterns are discussed using simulation results.
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Submitted 2 April, 2020; v1 submitted 13 November, 2019;
originally announced November 2019.
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Influence of Te-doping on self-catalyzed VS InAs nanowires
Authors:
Nicholas A. Güsken,
Torsten Rieger,
Gregor Mussler,
Mihail Ion Lepsa,
Detlev Grützmacher
Abstract:
We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zi…
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We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about $1 \times 10^{-5}$ while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is stronger affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure.
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Submitted 27 September, 2017;
originally announced September 2017.
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MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures
Authors:
Nicholas A. Güsken,
Torsten Rieger,
Benjamin Bennemann,
Elmar Neumann,
Mihail Ion Lepsa,
Thomas Schäpers,
Detlev Grützmacher
Abstract:
We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest…
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We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest for ongoing research in the fields of gateable Josephson junctions and quantum information related research. Systematic investigations of the deposition parameters suitable for metal shell growth are conducted. In case of Al, the substrate temperature, the growth rate and the shell thickness are considered. The substrate temperature as well as the angle of the impinging deposition flux are explored for Nb shells. The core-shell hybrid structures are characterized by electron microscopy and x-ray spectroscopy. Our results show that the substrate temperature is a crucial parameter in order to enable the deposition of smooth Al layers. Contrary, Nb films are less dependent on substrate temperature but strongly affected by the deposition angle. At a temperature of 200°C Nb reacts with InAs, dissolving the nanowire crystal. Our investigations result in smooth metal shells exhibiting an impurity and defect free, crystalline superconductor/InAs interface. Additionally, we find that the superconductor crystal structure is not affected by stacking faults present in the InAs nanowires.
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Submitted 9 July, 2017;
originally announced July 2017.
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Coherent Electron Zitterbewegung
Authors:
I. Stepanov,
M. Ersfeld,
A. V. Poshakinskiy,
M. Lepsa,
E. L. Ivchenko,
S. A. Tarasenko,
B. Beschoten
Abstract:
Zitterbewegung is a striking consequence of relativistic quantum mechanics which predicts that free Dirac electrons exhibit a rapid trembling motion even in the absence of external forces. The trembling motion of an electron results from the interference between the positive and the negative-energy solutions of the Dirac equation, separated by one MeV, leading to oscillations at extremely high fre…
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Zitterbewegung is a striking consequence of relativistic quantum mechanics which predicts that free Dirac electrons exhibit a rapid trembling motion even in the absence of external forces. The trembling motion of an electron results from the interference between the positive and the negative-energy solutions of the Dirac equation, separated by one MeV, leading to oscillations at extremely high frequencies which are out of reach experimentally. Recently, it was shown theoretically that electrons in III-V semiconductors are governed by similar equations in the presence of spin-orbit coupling. The small energy splittings up to meV result in Zitterbewegung at much smaller frequencies which should be experimentally accessible as an AC current. Here, we demonstrate the Zitterbewegung of electrons in a solid. We show that coherent electron Zitterbewegung can be triggered by initializing an ensemble of electrons in the same spin states in strained n-InGaAs and is probed as an AC current at GHz frequencies. Its amplitude is shown to increase linearly with both the spin-orbit coupling strength and the Larmor frequency of the external magnetic field. The latter dependence is the hallmark of the dynamical generation mechanism of the oscillatory motion of the Zitterbewegung. Our results demonstrate that relativistic quantum mechanics can be studied in a rather simple solid state system at moderate temperatures. Furthermore, the large amplitude of the AC current at high precession frequencies enables ultra-fast spin sensitive electric read-out in solids.
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Submitted 19 December, 2016;
originally announced December 2016.
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All-electrical time-resolved spin generation and spin manipulation in n-InGaAs
Authors:
I. Stepanov,
S. Kuhlen,
M. Ersfeld,
M. Lepsa,
B. Beschoten
Abstract:
We demonstrate all-electrical spin generation and subsequent manipulation by two successive electric field pulses in an n-InGaAs heterostructure in a time-resolved experiment at zero external magnetic field. The first electric field pulse along the $[1\bar10]$ crystal axis creates a current induced spin polarization (CISP) which is oriented in the plane of the sample. The subsequent electric field…
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We demonstrate all-electrical spin generation and subsequent manipulation by two successive electric field pulses in an n-InGaAs heterostructure in a time-resolved experiment at zero external magnetic field. The first electric field pulse along the $[1\bar10]$ crystal axis creates a current induced spin polarization (CISP) which is oriented in the plane of the sample. The subsequent electric field pulse along [110] generates a perpendicular magnetic field pulse leading to a coherent precession of this spin polarization with 2-dimensional electrical control over the final spin orientation. Spin precession is probed by time-resolved Faraday rotation. We determine the build-up time of CISP during the first field pulse and extract the spin dephasing time and internal magnetic field strength during the spin manipulation pulse.
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Submitted 17 December, 2013;
originally announced December 2013.
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Scanning tunneling microscopy with InAs nanowire tips
Authors:
Kilian Flöhr,
Kamil Sladek,
H. Yusuf Günel,
Mihail Ion Lepsa,
Hilde Hardtdegen,
Marcus Liebmann,
Thomas Schäpers,
Markus Morgenstern
Abstract:
Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM image…
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Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.
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Submitted 20 December, 2012;
originally announced December 2012.
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Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs
Authors:
S. Kuhlen,
K. Schmalbuch,
M. Hagedorn,
P. Schlammes,
M. Patt,
M. Lepsa,
G. Güntherodt,
B. Beschoten
Abstract:
Full electric-field control of spin orientations is one of the key tasks in semiconductor spintronics. We demonstrate that electric field pulses can be utilized for phase-coherent +/- pi spin rotation of optically generated electron spin packets in InGaAs epilayers detected by time-resolved Faraday rotation. Through spin-orbit interaction, the electric-field pulses act as local magnetic field puls…
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Full electric-field control of spin orientations is one of the key tasks in semiconductor spintronics. We demonstrate that electric field pulses can be utilized for phase-coherent +/- pi spin rotation of optically generated electron spin packets in InGaAs epilayers detected by time-resolved Faraday rotation. Through spin-orbit interaction, the electric-field pulses act as local magnetic field pulses (LMFP). By the temporal control of the LMFP, we can turn on and off electron spin precession and thereby rotate the spin direction into arbitrary orientations in a 2-dimensional plane. Furthermore, we demonstrate a spin echo-type spin drift experiment and find an unexpected partial spin rephasing, which is evident by a doubling of the spin dephasing time.
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Submitted 31 August, 2012; v1 submitted 21 July, 2011;
originally announced July 2011.
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Two-dimensional optical control of electron spin orientation by linearly polarized light in InGaAs
Authors:
K. Schmalbuch,
S. Göbbels,
Ph. Schäfers,
Ch. Rodenbücher,
P. Schlammes,
Th. Schäpers,
M. Lepsa,
G. Güntherodt,
B. Beschoten
Abstract:
Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. Thes…
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Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. These directions can be identified by the phase during spin precession using time-resolved Faraday rotation. We show that the spin orientations do not depend on the crystal axes suggesting an extrinsic excitation mechanism.
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Submitted 1 August, 2010;
originally announced August 2010.
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Spin dynamics triggered by sub-terahertz magnetic field pulses
Authors:
Zhao Wang,
Matthäus Pietz,
Arno Förster,
Mihail I. Lepsa,
Markus Münzenberg
Abstract:
Current pulses of up to 20 A and as short as 3 ps are generated by a low temperature grown GaAs (lt-GaAs) photoconductive switch and guided through a coplanar waveguide, resulting in a 0.6 Tesla terahertz (THz) magnetic field pulse. The pulse length is directly calibrated using photocurrent autocorrelation. Magnetic excitations in Fe microstructures are studied by time-resolved Kerr spectroscopy…
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Current pulses of up to 20 A and as short as 3 ps are generated by a low temperature grown GaAs (lt-GaAs) photoconductive switch and guided through a coplanar waveguide, resulting in a 0.6 Tesla terahertz (THz) magnetic field pulse. The pulse length is directly calibrated using photocurrent autocorrelation. Magnetic excitations in Fe microstructures are studied by time-resolved Kerr spectroscopy and compared with micromagnetic simulations. A response within less than 10 ps to the THz electromagnetic field pulse is found.
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Submitted 11 April, 2008; v1 submitted 21 November, 2007;
originally announced November 2007.
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Quantum point contact due to Fermi-level pinning and doping profiles in semiconductor nanocolumns
Authors:
K. M. Indlekofer,
M. Goryll,
J. Wensorra,
M. I. Lepsa
Abstract:
We show that nanoscale doping profiles inside a nanocolumn in combination with Fermi-level pinning at the surface give rise to the formation of a saddle-point in the potential profile. Consequently, the lateral confinement inside the channel varies along the transport direction, yielding an embedded quantum point contact. An analytical estimation of the quantization energies will be given.
We show that nanoscale doping profiles inside a nanocolumn in combination with Fermi-level pinning at the surface give rise to the formation of a saddle-point in the potential profile. Consequently, the lateral confinement inside the channel varies along the transport direction, yielding an embedded quantum point contact. An analytical estimation of the quantization energies will be given.
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Submitted 4 September, 2006;
originally announced September 2006.
