Showing 1–50 of 50 results for author: Leonard, F

Self-heating electrochemical memory for high-precision analog computing

Authors: Adam L. Gross, Sangheon Oh, François Léonard, Wyatt Hodges, T. Patrick Xiao, Joshua D. Sugar, Jacklyn Zhu, Sritharini Radhakrishnan, Sangyong Lee, Jolie Wang, Adam Christensen, Sam Lilak, Patrick S. Finnegan, Patrick Crandall, Christopher H. Bennett, William Wahby, Robin Jacobs-Gedrim, Matthew J. Marinella, Suhas Kumar, Sapan Agarwal, Yiyang Li, A. Alec Talin, Elliot J. Fuller

Abstract: Artificial intelligence (AI) is pushing the limits of digital computing to such an extent that, if current trends were to continue, global energy consumption from computation alone would eclipse all other forms of energy within the next two decades. One promising approach to reduce energy consumption and to increase computational speed is in-memory analog computing. However, analog computing neces… ▽ More Artificial intelligence (AI) is pushing the limits of digital computing to such an extent that, if current trends were to continue, global energy consumption from computation alone would eclipse all other forms of energy within the next two decades. One promising approach to reduce energy consumption and to increase computational speed is in-memory analog computing. However, analog computing necessitates a fundamental rethinking of computation at the material level, where information is stored as continuously variable physical observables. This shift introduces challenges related to the precision, dynamic range, and reliability of analog devices - issues that have hindered the development of existing memory technology for use in analog computers. Here, we address these issues in the context of memory which stores information as resistance. Our approach utilizes an electrochemical cell to tune the bulk oxygen-vacancy concentration within a metal oxide film. Through leveraging the gate contact as both a heater and source of electrochemical currents, kinetic barriers are overcome to enable a dynamic range of nine decades of analog tunable resistance, more than 3,000 available states, and programming with voltages less than 2 V. Furthermore, we demonstrate deterministic write operations with high precision, current-voltage linearity across six decades, and programming speeds as fast as 15 ns. These characteristics pave the way toward low-power analog computers with potential to improve AI efficiency by orders of magnitude. △ Less

Submitted 21 May, 2025; originally announced May 2025.

Perfect supercurrent diode efficiency in chiral nanotube-based Josephson junctions

Authors: Joseph J. Cuozzo, François Léonard

Abstract: The supercurrent diode effect (SDE) describes superconducting systems where the magnitude of the superconducting-to-normal state switching current differs for positive and negative current bias. Despite the ubiquity of such diode effects in Josephson devices, the fundamental conditions to observe a diode effect in a Josephson junction and achieve perfect diode efficiency remain unclear. In this wo… ▽ More The supercurrent diode effect (SDE) describes superconducting systems where the magnitude of the superconducting-to-normal state switching current differs for positive and negative current bias. Despite the ubiquity of such diode effects in Josephson devices, the fundamental conditions to observe a diode effect in a Josephson junction and achieve perfect diode efficiency remain unclear. In this work, we analyze the supercurrent diode properties of a chiral nanotube-based Josephson junction within a Ginzburg-Landau theory. We find a diode effect and anomalous phase develops across the junction when a magnetic field is applied parallel to the tube despite the absence of spin-orbit interactions in the system. Unexpectedly, the SDE in the junction is independent of the anomalous phase. Alternatively, we determine a non-reciprocal persistent current that is protected by fluxoid quantization can activate SDE, even in the absence of higher-order pair tunneling processes. We show this new type of SDE can lead to, in principle, a perfect diode efficiency, highlighting how persistent currents can be used to engineer high efficiency supercurrent diodes. △ Less

Submitted 3 April, 2025; originally announced April 2025.

Comments: 7 pages, 2 figures

ELEQTRONeX: A GPU-Accelerated Exascale Framework for Non-Equilibrium Quantum Transport in Nanomaterials

Authors: Saurabh Sawant, François Léonard, Zhi Yao, Andrew Nonaka

Abstract: Non-equilibrium electronic quantum transport is crucial for the operation of existing and envisioned electronic, optoelectronic, and spintronic devices. The ultimate goal of encompassing atomistic to mesoscopic length scales in the same nonequilibrium device simulation approach has traditionally been challenging due to the computational cost of high-fidelity coupled multiphysics and multiscale req… ▽ More Non-equilibrium electronic quantum transport is crucial for the operation of existing and envisioned electronic, optoelectronic, and spintronic devices. The ultimate goal of encompassing atomistic to mesoscopic length scales in the same nonequilibrium device simulation approach has traditionally been challenging due to the computational cost of high-fidelity coupled multiphysics and multiscale requirements. In this work, we present ELEQTRONeX (ELEctrostatic Quantum TRansport modeling Of Nanomaterials at eXascale), a massively-parallel GPU-accelerated framework for self-consistently solving the nonequilibrium Green's function formalism and electrostatics in complex device geometries. By customizing algorithms for GPU multithreading, we achieve orders of magnitude improvement in computational time, and excellent scaling on up to 512 GPUs and billions of spatial grid cells. We validate our code by computing band structures, current-voltage characteristics, conductance, and drain-induced barrier lowering for various 3D configurations of carbon nanotube field-effect transistors. We also demonstrate that ELEQTRONeX is suitable for complex device/material geometries where periodic approaches are not feasible, such as modeling of arrays of misaligned carbon nanotubes requiring fully 3D simulations. △ Less

Submitted 19 July, 2024; originally announced July 2024.

Comments: 29 pages, 6 figures, 3 tables

Ab initio calculations of low-energy quasiparticle lifetimes in bilayer graphene

Authors: Catalin D. Spataru, François Léonard

Abstract: Motivated by recent experimental results we calculate from first-principles the lifetime of low-energy quasiparticles in bilayer graphene (BLG). We take into account the scattering rate arising from electron-electron interactions within the $GW$ approximation for the electron self-energy and consider several p-type doping levels ranging from $0$ to $ρ\approx 2.4\times 10^{12}$ holes/cm$^2$. In the… ▽ More Motivated by recent experimental results we calculate from first-principles the lifetime of low-energy quasiparticles in bilayer graphene (BLG). We take into account the scattering rate arising from electron-electron interactions within the $GW$ approximation for the electron self-energy and consider several p-type doping levels ranging from $0$ to $ρ\approx 2.4\times 10^{12}$ holes/cm$^2$. In the undoped case we find that the average inverse lifetime scales linearly with energy away from the charge neutrality point, with values in good agreement with experiments. The decay rate is approximately three times larger than in monolayer graphene, a consequence of the enhanced screening in BLG. In the doped case, the dependence of the inverse lifetime on quasiparticle energy acquires a non-linear component due to the opening of an additional decay channel mediated by acoustic plasmons. △ Less

Submitted 7 September, 2023; originally announced September 2023.

Comments: 15 pages, 3 figures, accepeted for publication in Applied Physics Letters

Nanoscale Architecture for Frequency-Resolving Single-Photon Detectors

Authors: Steve M. Young, Mohan Sarovar, François Léonard

Abstract: Single photon detectors play a key role across several basic science and technology applications. While progress has been made in improving performance, single photon detectors that can maintain high performance while also resolving the photon frequency are still lacking. By means of quantum simulations, we show that nanoscale elements cooperatively interacting with the photon field in a photodete… ▽ More Single photon detectors play a key role across several basic science and technology applications. While progress has been made in improving performance, single photon detectors that can maintain high performance while also resolving the photon frequency are still lacking. By means of quantum simulations, we show that nanoscale elements cooperatively interacting with the photon field in a photodetector architecture allow to simultaneously achieve high efficiency, low jitter, and high frequency resolution. We discuss how such cooperative interactions are essential to reach this performance regime, analyzing the factors that impact performance and trade-offs between metrics. We illustrate the potential performance for frequency resolution over a 1 eV bandwidth in the visible range, indicating near perfect detection efficiency, jitter of a few hundred femtoseconds, and frequency resolution of tens of meV. Finally, a potential physical realization of such an architecture is presented based on carbon nanotubes functionalized with quantum dots. △ Less

Submitted 9 August, 2023; v1 submitted 11 May, 2022; originally announced May 2022.

Comments: Published version

Journal ref: Communications Physics 6, 71 (2023)

Co-Design of Free-Space Metasurface Optical Neuromorphic Classifiers for High Performance

Authors: François Léonard, Adam S. Backer, Elliot J. Fuller, Corinne Teeter, Craig. M. Vineyard

Abstract: Classification of features in a scene typically requires conversion of the incoming photonic field into the electronic domain. Recently, an alternative approach has emerged whereby passive structured materials can perform classification tasks by directly using free-space propagation and diffraction of light. In this manuscript, we present a theoretical and computational study of such systems and e… ▽ More Classification of features in a scene typically requires conversion of the incoming photonic field into the electronic domain. Recently, an alternative approach has emerged whereby passive structured materials can perform classification tasks by directly using free-space propagation and diffraction of light. In this manuscript, we present a theoretical and computational study of such systems and establish the basic features that govern their performance. We show that system architecture, material structure, and input light field are intertwined and need to be co-designed to maximize classification accuracy. Our simulations show that a single layer metasurface can achieve classification accuracy better than conventional linear classifiers, with an order of magnitude fewer diffractive features than previously reported. For a wavelength λ, single layer metasurfaces of size with aperture density achieve ~96% testing accuracy on the MNIST dataset, for an optimized distance ~ to the output plane. This is enabled by an intrinsic nonlinearity in photodetection, despite the use of linear optical metamaterials. Furthermore, we find that once the system is optimized, the number of diffractive features is the main determinant of classification performance. The slow asymptotic scaling with the number of apertures suggests a reason why such systems may benefit from multiple layer designs. Finally, we show a trade-off between the number of apertures and fabrication noise. △ Less

Submitted 15 June, 2021; originally announced June 2021.

Comments: 32 pages, 11 figures (main text and supporting information). To appear in ACS Photonics

Nanoscale functionalized superconducting transport channels as photon detectors

Authors: Catalin D. Spataru, François Léonard

Abstract: Single-photon detectors have typically consisted of macroscopic materials where both the photon absorption and transduction to an electrical signal happen. Newly proposed designs suggest that large arrays of nanoscale detectors could provide improved performance in addition to decoupling the absorption and transduction processes. Here we study the properties of such a detector consisting of a nano… ▽ More Single-photon detectors have typically consisted of macroscopic materials where both the photon absorption and transduction to an electrical signal happen. Newly proposed designs suggest that large arrays of nanoscale detectors could provide improved performance in addition to decoupling the absorption and transduction processes. Here we study the properties of such a detector consisting of a nanoscale superconducting (SC) transport channel functionalized by a photon absorber. We explore two detection mechanisms based on photo-induced electrostatic gating and magnetic effects. To this end we model the narrow channel as a one-dimensional atomic chain and use a self-consistent Keldysh-Nambu Green's function formalism to describe non-equilibrium effects and SC phenomena. We consider cases where the photon creates electrostatic and magnetic changes in the absorber, as well as devices with strong and weak coupling to the metal leads. Our results indicate that the most promising case is when the SC channel is weakly coupled to the leads and in the presence of a background magnetic field, where photo-excitation of a magnetic molecule can trigger a SC-to-normal transition in the channel that leads to a change in the device current several times larger than in the case of a normal-phase channel device. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Comments: 12 pages, 12 figures, Phys. Rev. B in press

Journal ref: Physical Review B 103, 134512 (2021)

Quantum dynamics of single-photon detection using functionalized quantum transport electronic channels

Authors: Catalin D. Spataru, François Léonard

Abstract: Single photon detectors have historically consisted of macroscopic-sized materials but recent experimental and theoretical progress suggests new approaches based on nanoscale and molecular electronics. Here we present a theoretical study of photodetection in a system composed of a quantum electronic transport channel functionalized by a photon absorber. Notably, the photon field, absorption proces… ▽ More Single photon detectors have historically consisted of macroscopic-sized materials but recent experimental and theoretical progress suggests new approaches based on nanoscale and molecular electronics. Here we present a theoretical study of photodetection in a system composed of a quantum electronic transport channel functionalized by a photon absorber. Notably, the photon field, absorption process, transduction mechanism, and measurement process are all treated as part of one fully-coupled quantum system, with explicit interactions. Using non-equilibrium, time-dependent quantum transport simulations, we reveal the unique temporal signatures of the single photon detection process, and show that the system can be described using optical Bloch equations, with a new non-linearity as a consequence of time-dependent detuning caused by the backaction from the transport channel via the dynamical Stark effect. We compute the photodetector signal-to-noise ratio and demonstrate that single photon detection at high count rate is possible for realistic parameters by exploiting a novel non-equilibrium control of backaction. △ Less

Submitted 6 August, 2019; originally announced August 2019.

Comments: 12 pages, 8 figures, to appear in Phys. Rev. Research

Journal ref: Phys. Rev. Research 1, 013018 (2019)

Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States

Authors: Gunta Kunakova, Luca Galletti, Sophie Charpentier, Jana Andzane, Donats Erts, Francois Leonard, Catalin D. Spataru, Thilo Bauch, Floriana Lombardi

Abstract: Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet been reported with similar properties, despite the fact that size confinement should help reduce contributions from bulk carriers. Here we demonstrate that Bi2Se… ▽ More Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet been reported with similar properties, despite the fact that size confinement should help reduce contributions from bulk carriers. Here we demonstrate that Bi2Se3 nanoribbons, grown by a simple catalyst-free physical-vapour deposition, have inherently low bulk carrier densities, and can be further made bulk-free by size confinement, thus revealing the high mobility topological surface states. Magneto transport and Hall conductance measurements, in single nanoribbons, show that at thicknesses below 30nm the bulk transport is completely suppressed which is supported by self-consistent band-bending calculations. The results highlight the importance of material growth and geometrical confinement to properly exploit the unique properties of the topological surface states. △ Less

Submitted 22 March, 2019; originally announced March 2019.

Journal ref: Nanoscale 2018, 10, 19595

Atomistic study of an ideal metal/thermoelectric contact: the full-Heusler/half-Heusler interface

Authors: Catalin D. Spataru, Yuping He, François Léonard

Abstract: Half-Heusler alloys such as the (Zr,Hf)NiSn intermetallic compounds are important thermoelectric materials for converting waste heat into electricity. Reduced electrical resistivity at the hot interface between the half-Heusler material and a metal contact is critical for device performance, however this has yet to be achieved in practice. Recent experimental work suggests that a coherent interfac… ▽ More Half-Heusler alloys such as the (Zr,Hf)NiSn intermetallic compounds are important thermoelectric materials for converting waste heat into electricity. Reduced electrical resistivity at the hot interface between the half-Heusler material and a metal contact is critical for device performance, however this has yet to be achieved in practice. Recent experimental work suggests that a coherent interface between half-Heusler and full-Heusler compounds can form due to diffusion of transition metal atoms into the vacant sublattice of the half-Heusler lattice. We study theoretically the structural and electronic properties of such an interface using a first-principles based approach that combines {\it ab initio} calculations with macroscopic modeling. We find that the prototypical interface HfNi$_2$Sn/HfNiSn provides very low contact resistivity and almost ohmic behavior over a wide range of temperatures and doping levels. Given the potential of these interfaces to remain stable over a wide range of temperatures, our study suggests that full-Heuslers might provide nearly ideal electrical contacts to half-Heuslers that can be harnessed for efficient thermoelectric generator devices. △ Less

Submitted 18 December, 2018; originally announced December 2018.

Comments: 8 pages, 8 figures

Journal ref: APL Materials 7, 013202 (2019)

General modeling framework for quantum photodetectors

Authors: Steve M. Young, Mohan Sarovar, François Léonard

Abstract: Photodetection plays a key role in basic science and technology, with exquisite performance having been achieved down to the single photon level. Further improvements in photodetectors would open new possibilities across a broad range of scientific disciplines, and enable new types of applications. However, it is still unclear what is possible in terms of ultimate performance, and what properties… ▽ More Photodetection plays a key role in basic science and technology, with exquisite performance having been achieved down to the single photon level. Further improvements in photodetectors would open new possibilities across a broad range of scientific disciplines, and enable new types of applications. However, it is still unclear what is possible in terms of ultimate performance, and what properties are needed for a photodetector to achieve such performance. Here, we present a general modeling framework for photodetectors whereby the photon field, the absorption process, and the amplification process are all treated as one coupled quantum system. The formalism naturally handles field states with single or multiple photons as well as a variety of detector configurations, and includes a mathematical definition of ideal photodetector performance. The framework reveals how specific photodetector architectures introduce limitations and tradeoffs for various performance metrics, providing guidance for optimization and design. △ Less

Submitted 19 November, 2018; originally announced November 2018.

Comments: To appear in Physical Review A

Atomistic Study of the Electronic Contact Resistivity Between the Half-Heusler Alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the Metal Ag

Authors: Yuping He, François Léonard, Catalin D. Spataru

Abstract: Half-Heusler(HH) alloys have shown promising thermoelectric properties in the medium and high temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts, and the expected values of con… ▽ More Half-Heusler(HH) alloys have shown promising thermoelectric properties in the medium and high temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts, and the expected values of contact resistivity. Here, we employ atomistic ab initio calculations to study electrical contacts in a subclass of HH alloys consisting of the compounds HfCoSb, HfZrCoSb, and HfZrNiSn. By using Ag as a prototypical metal, we show that the termination of the HH material critically determines the presence or absence of strong deformations at the interface. Our study includes contacts to doped materials, and the results indicate that the p-type materials generally form ohmic contacts while the n-type materials have a small Schottky barrier. We calculate the temperature dependence of the contact resistivity in the low to medium temperature range and provide quantitative values that set lower limits for these systems. △ Less

Submitted 4 June, 2018; originally announced June 2018.

Comments: 20 pages, 7 figures + Suppl. Mat., accepted for publication in Phys. Rev. Materials

Journal ref: Physical Review MATERIALS 2, 065401 (2018)

High Efficiency Thin Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts

Authors: Yuping He, François Léonard, Douglas L. Medlin, Nicholas Baldasaro, Dorota S. Temple, Philip Barletta, Catalin D. Spataru

Abstract: V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-tellurid… ▽ More V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-telluride materials. Here we present a combination of experimental and theoretical efforts to understand, design and harness low resistivity contacts to V-tellurides. Ab initio calculations are used to explore the effects of interfacial structure and chemical compositions on the electrical contacts, and an ab initio based macroscopic model is employed to predict the fundamental limit of contact resistivity as a function of both carrier concentration and temperature. Under the guidance of theoretical studies, we develop an experimental approach to fabricate low resistivity metal contacts to V-telluride thin film superlattices, achieving a 100-fold reduction compared to previous work. Interfacial characterization and analysis using both scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy show the unusual interfacial morphology and the potential for further improvement in contact resistivity. Finally, we harness the improved contacts to realize an improved high-performance thermoelectric cooling module. △ Less

Submitted 22 November, 2017; originally announced November 2017.

Comments: 36 pages, 11 figures (includes SI) to appear in Advanced Electronic Materials

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

Authors: François Léonard, Wenlong Yu, Kimberlee C. Collins, Douglas L. Medlin, Joshua D. Sugar, A. Alec Talin, Wei Pan

Abstract: The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological electronic and optical properties. Here we present spatially-resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectri… ▽ More The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological electronic and optical properties. Here we present spatially-resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectric origin of the photoresponse. Due to the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz1/2 at room temperature for visible light illumination at zero bias. We also show that these devices suffer from significant ambient reactivity such as the formation of a Te-rich surface region driven by Zr oxidation, as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors

Authors: François Léonard, Catalin D. Spataru, Michael Goldflam, David W. Peters, Thomas E. Beechem

Abstract: Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to… ▽ More Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at the contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even the absence of phonon or impurity scattering. We also show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. △ Less

Submitted 6 March, 2017; originally announced March 2017.

Comments: To appear in Scientific Reports

Bound states of the $φ^4$ model via the nonperturbative renormalization group

Authors: F. Rose, F. Benitez, F. Leonard, B. Delamotte

Abstract: Using the nonperturbative renormalization group, we study the existence of bound states in the symmetry-broken phase of the scalar $φ^4$ theory in all dimensions between two and four and as a function of the temperature. The accurate description of the momentum dependence of the two-point function, required to get the spectrum of the theory, is provided by means of the Blaizot--Méndez-Galain--Wsch… ▽ More Using the nonperturbative renormalization group, we study the existence of bound states in the symmetry-broken phase of the scalar $φ^4$ theory in all dimensions between two and four and as a function of the temperature. The accurate description of the momentum dependence of the two-point function, required to get the spectrum of the theory, is provided by means of the Blaizot--Méndez-Galain--Wschebor approximation scheme. We confirm the existence of a bound state in dimension three, with a mass within 1% of previous Monte-Carlo and numerical diagonalization values. △ Less

Submitted 15 June, 2016; v1 submitted 18 April, 2016; originally announced April 2016.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. D 93, 125018 (2016)

Critical exponents can be different on the two sides of a transition: A generic mechanism

Authors: Frédéric Léonard, Bertrand Delamotte

Abstract: We present models where $γ_+$ and $γ_-$, the exponents of the susceptibility in the high and low temperature phases, are generically different. In these models, continuous symmetries are explicitly broken down by discrete anisotropies that are irrelevant in the renormalization-group sense. The $\mathbb{Z}_q$-invariant models are the simplest examples for two-component order parameters ($N=2$) and… ▽ More We present models where $γ_+$ and $γ_-$, the exponents of the susceptibility in the high and low temperature phases, are generically different. In these models, continuous symmetries are explicitly broken down by discrete anisotropies that are irrelevant in the renormalization-group sense. The $\mathbb{Z}_q$-invariant models are the simplest examples for two-component order parameters ($N=2$) and the icosahedral symmetry for $N=3$. We compute accurately $γ_+ -γ_-$ as well as the ratio $ν/ν'$ of the exponents of the two correlation lengths present for $T<T_c$. △ Less

Submitted 12 November, 2015; v1 submitted 31 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. Lett. 115, 200601 (2015)

Uncooled Carbon Nanotube Photodetectors

Authors: Xiaowei He, Francois Leonard, Junichiro Kono

Abstract: Photodetectors play key roles in many applications such as remote sensing, night vision, reconnaissance, medical imaging, thermal imaging, and chemical detection. Several properties such as performance, reliability, ease of integration, cost, weight, and form factor are all important in determining the attributes of photodetectors for particular applications. While a number of materials have been… ▽ More Photodetectors play key roles in many applications such as remote sensing, night vision, reconnaissance, medical imaging, thermal imaging, and chemical detection. Several properties such as performance, reliability, ease of integration, cost, weight, and form factor are all important in determining the attributes of photodetectors for particular applications. While a number of materials have been used over the past several decades to address photodetection needs across the electromagnetic spectrum, the advent of nanomaterials opens new possibilities for photodetectors. In particular, carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene possess unique properties that have recently been explored for photodetectors. Here, we review the status of the field, presenting a broad coverage of the different types of photodetectors that have been realized with CNTs, placing particular emphasis on the types of mechanisms that govern their operation. We present a comparative summary of the main performance metrics for such detectors, and an outlook for performance improvements. △ Less

Submitted 11 May, 2015; originally announced May 2015.

Comments: 73 pages, 21 figures

Journal ref: Advanced Optical Materials 3, 989 (2015)

Higgs amplitude mode in the vicinity of a $(2+1)$-dimensional quantum critical point: a nonperturbative renormalization-group approach

Authors: Félix Rose, Frédéric Léonard, Nicolas Dupuis

Abstract: We study the "Higgs" amplitude mode in the relativistic quantum O($N$) model in two space dimensions. Using the nonperturbative renormalization group and the Blaizot--Méndez-Galain--Wschebor approximation (which we generalize to compute 4-point correlation functions), we compute the O($N$) invariant scalar susceptibility at zero temperature in the vicinity of the quantum critical point. In the ord… ▽ More We study the "Higgs" amplitude mode in the relativistic quantum O($N$) model in two space dimensions. Using the nonperturbative renormalization group and the Blaizot--Méndez-Galain--Wschebor approximation (which we generalize to compute 4-point correlation functions), we compute the O($N$) invariant scalar susceptibility at zero temperature in the vicinity of the quantum critical point. In the ordered phase, we find a well-defined Higgs resonance for $N=2$ and $N=3$ and determine its universal properties. No resonance is found for $N\geq 4$. In the disordered phase, the spectral function exhibits a threshold behavior with no Higgs-like peak. We also show that for $N=2$ the Higgs mode manifests itself as a very broad peak in the longitudinal susceptibility in spite of the infrared divergence of the latter. We compare our findings with results from quantum Monte Carlo simulations and $ε=4-(d+1)$ expansion near $d=3$. △ Less

Submitted 6 July, 2015; v1 submitted 30 March, 2015; originally announced March 2015.

Comments: Final version. 15 pages, 13 figures

Journal ref: Phys. Rev. B 91, 224501 (2015)

Fermi-Level Pinning, Charge Transfer, and Relaxation of Spin-Momentum Locking at Metal Contacts to Topological Insulators

Authors: Catalin D. Spataru, Francois Leonard

Abstract: Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present large-scale ab initio calculations of the electronic properties of Au, Ni, Pt, Pd, and graphene contacts to Bi2Se3. We show that regardless of the metal, the Fe… ▽ More Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present large-scale ab initio calculations of the electronic properties of Au, Ni, Pt, Pd, and graphene contacts to Bi2Se3. We show that regardless of the metal, the Fermi level is located in the conduction band, leading to n-type Ohmic contact to the first quintuplet. Furthermore, we find strong charge transfer and band-bending in the first few quintuplets, with no Schottky barrier for charge injection even when the topoplogical insulator is undoped. Our calculations indicate that Au and graphene leave the spin-momentum locking mostly unaltered, but on the other hand, Ni, Pd, and Pt strongly hybridize with Bi2Se3 and relax spin-momentum locking. Our results indicate that judicious choice of the contact metal is essential to reveal the unique surface features of topological insulators. △ Less

Submitted 21 July, 2014; originally announced July 2014.

Comments: Manuscript + Supplemental Material

Electrical Contacts to Three-Dimensional Arrays of Carbon Nanotubes

Authors: Aron W. Cummings, Julien Varennes, François Léonard

Abstract: We use numerical simulations to investigate the properties of metal contacts to three-dimensional arrays of carbon nanotubes (CNTs). For undoped arrays top-contacted with high or low work function metals, electrostatic screening is very strong, resulting in a small Schottky barrier for current injection in the top layer and large Schottky barriers for current injection in the deeper layers. As a c… ▽ More We use numerical simulations to investigate the properties of metal contacts to three-dimensional arrays of carbon nanotubes (CNTs). For undoped arrays top-contacted with high or low work function metals, electrostatic screening is very strong, resulting in a small Schottky barrier for current injection in the top layer and large Schottky barriers for current injection in the deeper layers. As a consequence, the majority of the current flows through the top layer of the array. Our simulations show that doping of the CNT array can alleviate this problem, even without direct contact to each tube in the array; however, we find that the charge transfer length is unusually long in arrays and increases with the number of CNT layers under the contact. We also show that a bottom gate can modulate the contact resistance, but only very weakly. These results are important for the design of electronic and optoelectronic devices based on CNT arrays, because they suggest that increasing the thickness of the array does little to improve the device performance unless the film is strongly doped at the contacts and the contact is long, or unless each tube in the array is directly contacted by the metal. △ Less

Submitted 16 March, 2014; originally announced March 2014.

Comments: 7 pages and 6 figures, plus 4 pages and 2 figures of supplemental material

Journal ref: IEEE T. Nanotechnol. 12, 1166 (2013)

Spectroscopic Properties of Nanotube-Chromophore Hybrids

Authors: Changshui Huang, Randy K. Wang, Bryan M. Wong, David J. McGee, François Léonard, Yun Jun Kim, Kirsten F. Johnson, Michael S. Arnold, Mark A. Eriksson, Padma Gopalan

Abstract: Recently, individual single-walled carbon nanotubes (SWNTs) functionalized with azo-benzene chromophores were shown to form a new class of hybrid nanomaterials for optoelectronics applications. Here we use a number of experimental techniques and theory to understand the binding, orientation, and nature of coupling between chromophores and the nanotubes, all of which are of relevance to future opti… ▽ More Recently, individual single-walled carbon nanotubes (SWNTs) functionalized with azo-benzene chromophores were shown to form a new class of hybrid nanomaterials for optoelectronics applications. Here we use a number of experimental techniques and theory to understand the binding, orientation, and nature of coupling between chromophores and the nanotubes, all of which are of relevance to future optimization of these hybrid materials. We find that the binding energy between chromophores and nanotubes depends strongly on the type of tether that is used to bind the chromophores to the nanotubes, with pyrene tethers resulting in more than 90% of the bound chromophores during processing. DFT calculations show that the binding energy of the chromophores to the nanotubes is maximized for chromophores parallel to the nanotube sidewall, even with the use of tethers; second harmonic generation shows that there is nonetheless a partial radial orientation of the chromophores on the nanotubes. We find weak electronic coupling between the chromophores and the SWNTs, consistent with non-covalent binding. The chromophore-nanotube coupling, while weak, is sufficient to quench the chromophore fluorescence. Stern-Volmer plots are non-linear, which supports a combination of static and dynamic quenching processes. The chromophore orientation is an important variable for chromophore-nanotube phototransistors, and our experiments suggest the possibility for further optimizing this orientational degree of freedom. △ Less

Submitted 21 December, 2013; originally announced December 2013.

Comments: Accepted by ACS Nano

Journal ref: ACS Nano, 5, 7767 (2011)

Functionalization of Single-Wall Carbon Nanotubes with Chromophores of Opposite Internal Dipole Orientation

Authors: Yuanchun Zhao, Changshui Huang, Myungwoong Kim, Bryan M. Wong, François Léonard, Padma Gopalan, Mark A. Eriksson

Abstract: We report the functionalization of carbon nanotubes with two azobenzene-based chromophores with large internal dipole moments and opposite dipole orientations. The molecules are attached to the nanotubes non-covalently via a pyrene tether. A combination of characterization techniques shows uniform molecular coverage on the nanotubes, with minimal aggregation of excess chromophores on the substrate… ▽ More We report the functionalization of carbon nanotubes with two azobenzene-based chromophores with large internal dipole moments and opposite dipole orientations. The molecules are attached to the nanotubes non-covalently via a pyrene tether. A combination of characterization techniques shows uniform molecular coverage on the nanotubes, with minimal aggregation of excess chromophores on the substrate. The large on/off ratios and the sub-threshold swings of the nanotube-based field-effect transistors (FETs) are preserved after functionalization, and different shifts in threshold voltage are observed for each chromophore. Ab initio calculations verify the properties of the synthesized chromophores and indicate very small charge transfer, confirming a strong, non-covalent functionalization. △ Less

Submitted 21 December, 2013; originally announced December 2013.

Comments: Accepted by ACS Applied Materials and Interfaces

Journal ref: ACS Applied Materials & Interfaces, 5, 9355 (2013)

Many-body effects on the electronic and optical properties of strained semiconducting carbon nanotubes

Authors: Catalin D. Spataru, François Léonard

Abstract: We present many-body \textit{ab initio} calculations of the electronic and optical properties of semiconducting zigzag carbon nanotubes under uniaxial strain. The GW approach is utilized to obtain the quasiparticle bandgaps and is combined with the Bethe-Salpeter equation to obtain the optical absorption spectrum. We find that the dependence of the electronic bandgaps on strain is more complex tha… ▽ More We present many-body \textit{ab initio} calculations of the electronic and optical properties of semiconducting zigzag carbon nanotubes under uniaxial strain. The GW approach is utilized to obtain the quasiparticle bandgaps and is combined with the Bethe-Salpeter equation to obtain the optical absorption spectrum. We find that the dependence of the electronic bandgaps on strain is more complex than previously predicted based on tight-binding models or density-functional theory. In addition, we show that the exciton energy and exciton binding energy depend significantly on strain, with variations of tens of meVs per percent strain, but that despite these strong changes the absorbance is found to be nearly independent of strain. Our results provide new guidance for the understanding and design of optomechanical systems based on carbon nanotubes. △ Less

Submitted 24 June, 2013; originally announced June 2013.

Comments: To appear in Physical Review B

Physical Removal of Metallic Carbon Nanotubes from Nanotube Network Devices Using a Thermal and Fluidic Process

Authors: Alexandra C. Ford, Michael Shaughnessy, Bryan M. Wong, Alexander A. Kane, Oleksandr V. Kuznetsov, Karen L. Krafcik, W. E. Billups, Robert H. Hauge, François Léonard

Abstract: Electronic and optoelectronic devices based on thin films of carbon nanotubes are currently limited by the presence of metallic nanotubes. Here we present a novel approach based on nanotube alkyl functionalization to physically remove the metallic nanotubes from such network devices. The process relies on preferential thermal desorption of the alkyls from the semiconducting nanotubes and the subse… ▽ More Electronic and optoelectronic devices based on thin films of carbon nanotubes are currently limited by the presence of metallic nanotubes. Here we present a novel approach based on nanotube alkyl functionalization to physically remove the metallic nanotubes from such network devices. The process relies on preferential thermal desorption of the alkyls from the semiconducting nanotubes and the subsequent dissolution and selective removal of the metallic nanotubes in chloroform. The approach is versatile and is applied to devices post-fabrication. △ Less

Submitted 1 February, 2013; originally announced February 2013.

Thermoelectric efficiency in the space-charge-limited transport regime in semiconductors

Authors: François Léonard

Abstract: The thermoelectric efficiency of semiconductors is usually considered in the ohmic electronic transport regime, which is achieved through high doping. Here we consider the opposite regime of low doping where the current-voltage characteristics are nonlinear and dominated by space-charge-limited transport. We show that in this regime, the thermoelectric efficiency can be described by a single figur… ▽ More The thermoelectric efficiency of semiconductors is usually considered in the ohmic electronic transport regime, which is achieved through high doping. Here we consider the opposite regime of low doping where the current-voltage characteristics are nonlinear and dominated by space-charge-limited transport. We show that in this regime, the thermoelectric efficiency can be described by a single figure of merit, in analogy with the ohmic case. Efficiencies for bulk, thin film, and nanowire materials are discussed, and it is proposed that nanowires are the most promising to take advantage of space-charge-limited transport for thermoelectrics. △ Less

Submitted 27 September, 2012; originally announced September 2012.

Comments: To appear in Phys. Rev. B

Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts

Authors: Aron W. Cummings, François Léonard

Abstract: We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is distinct from that observed in Schottky barrier carbon nanotube transistors. This modulation of the contacts by the gate allows for the realization of superior s… ▽ More We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is distinct from that observed in Schottky barrier carbon nanotube transistors. This modulation of the contacts by the gate allows for the realization of superior subthreshold swings for short channels, and improved scaling behavior. These results further elucidate the behavior of carbon nanotube-metal contacts, and should be useful in the optimization of high-performance carbon nanotube electronics. △ Less

Submitted 1 May, 2012; originally announced May 2012.

Comments: 20 pages, 6 figures

Journal ref: ACS Nano 6, 4494 (2012)

Efficient terahertz emission from InAs nanowires

Authors: Denis V. Seletskiy, Michael P. Hasselbeck, Jeffrey G. Cederberg, Aaron Katzenmeyer, Maria E. Toimil-Molares, François Léonard, A. Alec Talin, Mansoor Sheik-Bahae

Abstract: We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. We present evi… ▽ More We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. We present evidence that this radiation originates from a low-energy acoustic surface plasmon mode of the nanowire. This is supported by independent measurements of electronic transport on individual nanowires, ultrafast THz spectroscopy and theoretical analysis. Our combined experiments and analysis further indicate that these plasmon modes are specific to high aspect ratio geometries. △ Less

Submitted 2 September, 2011; originally announced September 2011.

Comments: 12 pages, 7 figures

Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires

Authors: Bryan M. Wong, François Léonard, Qiming Li, George T. Wang

Abstract: The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross-sections are studied theoretically. We show that at nanoscale dimensions, the non-polar hexagonal system exhibits degenerate quasi-one-dimensional electron gases at the hexagon corners, which transition to a core-centered electron gas at lower doping. In contrast,… ▽ More The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross-sections are studied theoretically. We show that at nanoscale dimensions, the non-polar hexagonal system exhibits degenerate quasi-one-dimensional electron gases at the hexagon corners, which transition to a core-centered electron gas at lower doping. In contrast, polar triangular core/shell nanowires show either a non-degenerate electron gas on the polar face or a single quasi-one-dimensional electron gas at the corner opposite the polar face, depending on the termination of the polar face. More generally, our results indicate that electron gases in closed nanoscale systems are qualitatively different from their bulk counterparts. △ Less

Submitted 28 June, 2011; v1 submitted 23 June, 2011; originally announced June 2011.

Comments: 16 pages, 7 figures. To appear in Nano Letters. Corrected some typos

Electrostatic effects on contacts to carbon nanotube transistors

Authors: Aron W. Cummings, François Léonard

Abstract: We use numerical simulations to investigate the effect of electrostatics on the source and drain contacts of carbon nanotube field-effect transistors. We find that unscreened charge on the nanotube at the contact-channel interface leads to a potential barrier that can significantly hamper transport through the device. This effect is largest for intermediate gate voltages and for contacts near the… ▽ More We use numerical simulations to investigate the effect of electrostatics on the source and drain contacts of carbon nanotube field-effect transistors. We find that unscreened charge on the nanotube at the contact-channel interface leads to a potential barrier that can significantly hamper transport through the device. This effect is largest for intermediate gate voltages and for contacts near the ohmic-Schottky crossover, but can be mitigated with a reduction in the gate oxide thickness. These results help to elucidate the important role that contact geometry plays in the performance of carbon nanotube electronic devices. △ Less

Submitted 10 June, 2011; originally announced June 2011.

Journal ref: Appl. Phys. Lett. 98, 263503 (2011)

Reduced Joule heating in nanowires

Authors: François Léonard

Abstract: The temperature distribution in nanowires due to Joule heating is studied analytically using a continuum model and a Green's function approach. We show that the temperatures reached in nanowires can be much lower than that predicted by bulk models of Joule heating, due to heat loss at the nanowire surface that is important at nanoscopic dimensions, even when the thermal conductivity of the environ… ▽ More The temperature distribution in nanowires due to Joule heating is studied analytically using a continuum model and a Green's function approach. We show that the temperatures reached in nanowires can be much lower than that predicted by bulk models of Joule heating, due to heat loss at the nanowire surface that is important at nanoscopic dimensions, even when the thermal conductivity of the environment is relatively low. In addition, we find that the maximum temperature in the nanowire scales weakly with length, in contrast to the bulk system. A simple criterion is presented to assess the importance of these effects. The results have implications for the experimental measurements of nanowire thermal properties, for thermoelectric applications, and for controlling thermal effects in nanowire electronic devices. △ Less

Submitted 28 February, 2011; v1 submitted 15 February, 2011; originally announced February 2011.

Comments: 4 pages, 3 figures. To appear in Applied Physics Letters

Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires

Authors: Aaron M. Katzenmeyer, François Léonard, A. Alec Talin, Ping-Show Wong, Diana L. Huffaker

Abstract: We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this sem… ▽ More We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this semi-insulating electrical behavior is the result of trap-mediated carrier transport. We observe Poole-Frenkel transport that crosses over to phonon-assisted tunneling at higher fields, with a tunneling time found to depend predominantly on fundamental physical constants as predicted by theory. By using in situ electron beam irradiation of individual nanowires we probe the nanowire electronic transport when free carriers are made available, thus revealing the nature of the contacts. △ Less

Submitted 28 October, 2010; originally announced October 2010.

Observation of Space-Charge-Limited Transport in InAs Nanowires

Authors: Aaron M. Katzenmeyer, François Léonard, A. Alec Talin, M. Eugenia Toimil-Molares, Jeffrey G. Cederberg, Jianyu Huang, Jessica L. Lensch-Falk

Abstract: Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induce… ▽ More Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induced failure by Joule heating supports the notion of space-charge-limited transport and proposes reduced thermal conductivity due to the nanowires polymorphism. △ Less

Submitted 9 October, 2010; originally announced October 2010.

Tunable bandgaps and excitons in doped semiconducting carbon nanotubes made possible by acoustic plasmons

Authors: Catalin D. Spataru, François Léonard

Abstract: Doping of semiconductors is essential in modern electronic and photonic devices. While doping is well understood in bulk semiconductors, the advent of carbon nanotubes and nanowires for nanoelectronic and nanophotonic applications raises some key questions about the role and impact of doping at low dimensionality. Here we show that for semiconducting carbon nanotubes, bandgaps and exciton binding… ▽ More Doping of semiconductors is essential in modern electronic and photonic devices. While doping is well understood in bulk semiconductors, the advent of carbon nanotubes and nanowires for nanoelectronic and nanophotonic applications raises some key questions about the role and impact of doping at low dimensionality. Here we show that for semiconducting carbon nanotubes, bandgaps and exciton binding energies can be dramatically reduced upon experimentally relevant doping, and can be tuned gradually over a broad range of energies in contrast to higher dimensional systems. The later feature is made possible by a novel mechanism involving strong dynamical screening effects mediated by acoustic plasmons. △ Less

Submitted 2 May, 2010; originally announced May 2010.

Comments: 5 pages, 4 figures, published in Phys. Rev. Lett.

Journal ref: PRL 104, 177402 (2010)

Self-consistent ac quantum transport using nonequilibrium Green functions

Authors: Diego Kienle, Mani Vaidyanathan, François Léonard

Abstract: We develop an approach for self-consistent ac quantum transport in the presence of time-dependent potentials at non-transport terminals. We apply the approach to calculate the high-frequency characteristics of a nanotube transistor with the ac signal applied at the gate terminal. We show that the self-consistent feedback between the ac charge and potential is essential to properly capture the tran… ▽ More We develop an approach for self-consistent ac quantum transport in the presence of time-dependent potentials at non-transport terminals. We apply the approach to calculate the high-frequency characteristics of a nanotube transistor with the ac signal applied at the gate terminal. We show that the self-consistent feedback between the ac charge and potential is essential to properly capture the transport properties of the system. In the on-state, this feedback leads to the excitation of plasmons, which appear as pronounced divergent peaks in the dynamic conductance at terahertz frequencies. In the off-state, these collective features vanish, and the conductance exhibits smooth oscillations, a signature of single-particle excitations. The proposed approach is general and will allow the study of the high-frequency characteristics of many other low-dimensional nanoscale materials such as nanowires and graphene-based systems, which are attractive for terahertz devices, including those that exploit plasmonic excitations. △ Less

Submitted 10 March, 2010; originally announced March 2010.

Comments: 11 pages, 5 figures, accepted in Physical Review B

Terahertz response of carbon nanotube transistors

Authors: Diego Kienle, François Léonard

Abstract: We present an approach for time-dependent quantum transport based on a self-consistent non-equilibrium Green function formalism. The technique is applied to a ballistic carbon nanotube transistor in the presence of a time harmonic signal at the gate. In the ON state the dynamic conductance exhibits plasmonic resonant peaks at terahertz frequencies. These vanish in the OFF state, and the dynamic… ▽ More We present an approach for time-dependent quantum transport based on a self-consistent non-equilibrium Green function formalism. The technique is applied to a ballistic carbon nanotube transistor in the presence of a time harmonic signal at the gate. In the ON state the dynamic conductance exhibits plasmonic resonant peaks at terahertz frequencies. These vanish in the OFF state, and the dynamic conductance displays smooth oscillations, a signature of single particle quantum effects. We show that the nanotube kinetic inductance plays an essential role in the high-frequency behavior. △ Less

Submitted 15 June, 2009; originally announced June 2009.

Comments: 10 pages, 4 figures, accepted in Physical Review Letters

Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes

Authors: François Léonard, A. Alec Talin, B. S. Swartzentruber, S. T. Picraux

Abstract: We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a d… ▽ More We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a diameter dependence of both the depletion width and the electron-hole recombination time. The recombination time is dominated by surface contributions and depends linearly on the nanowire diameter. △ Less

Submitted 6 March, 2009; originally announced March 2009.

Comments: To appear in Physical Review Letters

Color Detection Using Chromophore-Nanotube Hybrid Devices

Authors: Xinjian Zhou, Thomas Zifer, Bryan M. Wong, Karen L. Krafcik, Francois Leonard, Andrew L. Vance

Abstract: We present a nanoscale color detector based on a single-walled carbon nanotube functionalized with azobenzene chromophores, where the chromophores serve as photoabsorbers and the nanotube as the electronic read-out. By synthesizing chromophores with specific absorption windows in the visible spectrum and anchoring them to the nanotube surface, we demonstrate the controlled detection of visible l… ▽ More We present a nanoscale color detector based on a single-walled carbon nanotube functionalized with azobenzene chromophores, where the chromophores serve as photoabsorbers and the nanotube as the electronic read-out. By synthesizing chromophores with specific absorption windows in the visible spectrum and anchoring them to the nanotube surface, we demonstrate the controlled detection of visible light of low intensity in narrow ranges of wavelengths. Our measurements suggest that upon photoabsorption, the chromophores isomerize from the ground state trans configuration to the excited state cis configuration, accompanied by a large change in dipole moment, changing the electrostatic environment of the nanotube. All-electron ab initio calculations are used to study the chromophore-nanotube hybrids, and show that the chromophores bind strongly to the nanotubes without disturbing the electronic structure of either species. Calculated values of the dipole moments support the notion of dipole changes as the optical detection mechanism. △ Less

Submitted 12 February, 2009; originally announced February 2009.

Comments: Accepted by Nano Letters

Journal ref: Nano Letters 2009, 9, (3), 1028-1033

Unusually strong space-charge-limited current in thin wires

Authors: A. Alec Talin, François Léonard, B. S. Swartzentruber, Xin Wang, Stephen D. Hersee

Abstract: The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate that the nonlinear behavior originates instead from space-charge-limited current. A theory of space-charge-limited current in thin wires corroborates the experim… ▽ More The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate that the nonlinear behavior originates instead from space-charge-limited current. A theory of space-charge-limited current in thin wires corroborates the experiments, and shows that poor screening in high aspect ratio materials leads to a dramatic enhancement of space-charge limited current, resulting in new scaling in terms of the aspect ratio. △ Less

Submitted 13 August, 2008; originally announced August 2008.

Comments: 4 pages, 3 figures, to appear in Physical Review Letters

Theory of enhancement of thermoelectric properties of materials with nanoinclusions

Authors: Sergey V. Faleev, François Léonard

Abstract: Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering,… ▽ More Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of ZT due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity. △ Less

Submitted 1 July, 2008; originally announced July 2008.

Journal ref: Physical Review B 77, 214304 (2008)

Nanoscale periodicity in stripe-forming systems at high temperature: Au/W(110)

Authors: J. de la Figuera, F. Leonard, R. Stumpf, N. C. Bartelt, K. F. McCarty

Abstract: We observe using low-energy electron microscopy the self-assembly of monolayer-thick stripes of Au on W(110) near the transition temperature between stripes and the non-patterned (homogeneous) phase. We demonstrate that the amplitude of this Au stripe phase decreases with increasing temperature and vanishes at the order-disorder transition (ODT). The wavelength varies much more slowly with tempe… ▽ More We observe using low-energy electron microscopy the self-assembly of monolayer-thick stripes of Au on W(110) near the transition temperature between stripes and the non-patterned (homogeneous) phase. We demonstrate that the amplitude of this Au stripe phase decreases with increasing temperature and vanishes at the order-disorder transition (ODT). The wavelength varies much more slowly with temperature and coverage than theories of stress-domain patterns with sharp phase boundaries would predict, and maintains a finite value of about 100 nm at the ODT. We argue that such nanometer-scale stripes should often appear near the ODT. △ Less

Submitted 8 April, 2008; originally announced April 2008.

Comments: 5 pages

Journal ref: Phys. Rev. Lett. 100, 186102 (2008)

Optically Modulated Conduction in Chromophore-Functionalized Single-Wall Carbon Nanotubes

Authors: J. M. Simmons, I. In, V. E. Campbell, T. J. Mark, F. Leonard, P. Gopalan, M. A. Eriksson

Abstract: We demonstrate an optically active nanotube-hybrid material by functionalizing single-wall nanotubes with an azo-based chromophore. Upon UV illumination, the conjugated chromophore undergoes a cis-trans isomerization leading to a charge redistribution near the nanotube. This charge redistribution changes the local electrostatic environment, shifting the threshold voltage and increasing the condu… ▽ More We demonstrate an optically active nanotube-hybrid material by functionalizing single-wall nanotubes with an azo-based chromophore. Upon UV illumination, the conjugated chromophore undergoes a cis-trans isomerization leading to a charge redistribution near the nanotube. This charge redistribution changes the local electrostatic environment, shifting the threshold voltage and increasing the conductivity of the nanotube transistor. For a ~1-2% coverage, we measure a shift in the threshold voltage of up to 1.2 V. Further, the conductance change is reversible and repeatable over long periods of time, indicating that the chromophore functionalized nanotubes are useful for integrated nano-photodetectors. △ Less

Submitted 2 March, 2007; originally announced March 2007.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 98, 086802 (2007)

Properties of short channel ballistic carbon nanotube transistors with ohmic contacts

Authors: Francois Leonard, Derek A Stewart

Abstract: We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band lineup at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diameter… ▽ More We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band lineup at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diameter nanotubes, in agreement with recent experiments. For short channel ohmic contact devices, source-drain tunneling and drain-induced barrier lowering significantly impact the current-voltage characteristics. Furthermore, the ON state conductance shows a temperature dependence, even in the absence of phonon scattering or Schottky barriers. This last result also agrees with recently reported experimental measurements. △ Less

Submitted 28 August, 2006; originally announced August 2006.

Comments: Nanotechnology, in press

Journal ref: Nanotechnology, 17, 4699 (2006)

Size-dependent effects on electrical contacts to nanotubes and nanowires

Authors: F. Leonard, A. A. Talin

Abstract: Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one dimensional (Q1D) structures such as nanotubes and nanowires, side contact with the metal only leads to weak band realignment, in contrast with bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However… ▽ More Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one dimensional (Q1D) structures such as nanotubes and nanowires, side contact with the metal only leads to weak band realignment, in contrast with bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the conventional strategy of heavily doping the semiconductor to obtain Ohmic contacts breaks down as the nanowire diameter is reduced. The issue of Fermi level pinning is also discussed, and it is demonstrated that the unique density of states of Q1D structures makes them less sensitive to this effect. Our results agree with recent experimental work, and should apply to a broad range of Q1D materials. △ Less

Submitted 18 July, 2006; originally announced July 2006.

Comments: Physical Review Letters 97, 026804 (2006)

Crosstalk between nanotube devices: contact and channel effects

Authors: Francois Leonard

Abstract: At reduced dimensionality, Coulomb interactions play a crucial role in determining device properties. While such interactions within the same carbon nanotube have been shown to have unexpected properties, device integration and multi-nanotube devices require the consideration of inter-nanotube interactions. We present calculations of the characteristics of planar carbon nanotube transistors incl… ▽ More At reduced dimensionality, Coulomb interactions play a crucial role in determining device properties. While such interactions within the same carbon nanotube have been shown to have unexpected properties, device integration and multi-nanotube devices require the consideration of inter-nanotube interactions. We present calculations of the characteristics of planar carbon nanotube transistors including interactions between semiconducting nanotubes and between semiconducting and metallic nanotubes. The results indicate that inter-tube interactions affect both the channel behavior and the contacts. For long channel devices, a separation of the order of the gate oxide thickness is necessary to eliminate inter-nanotube effects. Because of an exponential dependence of this length scale on dielectric constant, very high device densities are possible by using high-k dielectrics and embedded contacts. △ Less

Submitted 31 January, 2006; originally announced February 2006.

Electrical contacts to nanotubes and nanowires: why size matters

Authors: Francois Leonard, A. Alec Talin

Abstract: Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one-dimensional structures such as nanotubes and nanowires, side contact with the metal only leads to weak band re-alignement, in contrast to bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the… ▽ More Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one-dimensional structures such as nanotubes and nanowires, side contact with the metal only leads to weak band re-alignement, in contrast to bulk metal-semiconductor contacts. Schottky barriers are much reduced compared with the bulk limit, and should facilitate the formation of good contacts. However, the conventional strategy of heavily doping the semiconductor to obtain ohmic contacts breaks down as the nanowire diameter is reduced. The issue of Fermi level pinning is also discussed, and it is demonstrated that the unique density of states of quasi-one-dimensional structures makes them less sensitive to this effect. Our results agree with recent experimental work, and should apply to a broad range of quasi-one-dimensional materials. △ Less

Submitted 31 January, 2006; originally announced February 2006.

Photocurrents in nanotube junctions

Authors: D. A. Stewart, Francois Leonard

Abstract: Photocurrents in nanotube p-n junctions are calculated using a non-equilibrium Green function quantum transport formalism. The short-circuit photocurrent displays band-to-band transitions and photon-assisted tunneling, and has multiple sharp peaks in the infrared, visible, and ultraviolet ranges. The operation of such devices in the nanoscale regime leads to unusual size effects, where the photo… ▽ More Photocurrents in nanotube p-n junctions are calculated using a non-equilibrium Green function quantum transport formalism. The short-circuit photocurrent displays band-to-band transitions and photon-assisted tunneling, and has multiple sharp peaks in the infrared, visible, and ultraviolet ranges. The operation of such devices in the nanoscale regime leads to unusual size effects, where the photocurrent scales linearly and oscillates with device length. The oscillations can be related to the density of states in the valence band, a factor that also determines the relative magnitude of the photoresponse for different bands. △ Less

Submitted 4 April, 2004; originally announced April 2004.

Comments: 5 pages, 4 figures, submitted

Journal ref: Phys. Rev. Lett. 93, 107401 (2004)

Multiple Functionality in Nanotube Transistors

Authors: F. Leonard, J. Tersoff

Abstract: Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions. At larger gate voltages, channel inversion leads to resonant tunneling through an electrostatically defined nanoscale quantum dot. Thus the transistor beco… ▽ More Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions. At larger gate voltages, channel inversion leads to resonant tunneling through an electrostatically defined nanoscale quantum dot. Thus the transistor becomes a gated resonant tunelling device, with negative differential resistance at a tunable threshold. For the dimensions considered here, the device operates in the Coulomb blockade regime, even at room temperature. △ Less

Submitted 21 May, 2002; originally announced May 2002.

Comments: To appear in Phys. Rev. Lett

Negative differential resistance in nanotube devices

Authors: F. Leonard, J. Tersoff

Abstract: Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for… ▽ More Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for device integration. △ Less

Submitted 27 October, 2000; originally announced October 2000.

Comments: 4 pages, 4 figures, to appear in Physical Review Letters

Role of Fermi-level pinning in nanotube Schottky diodes

Authors: Francois Leonard, J. Tersoff

Abstract: At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning". We find that when a semiconducting carbon nanotube is end-contacted to a metal (the optinal geometry for nanodevices), the behavior is radically different. Even when the Fermi level is fully "pinned" at the interface, the turn-on voltage is that expected for the unpinned junction. Thus the… ▽ More At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning". We find that when a semiconducting carbon nanotube is end-contacted to a metal (the optinal geometry for nanodevices), the behavior is radically different. Even when the Fermi level is fully "pinned" at the interface, the turn-on voltage is that expected for the unpinned junction. Thus the threshold may be adjusted for optimal device performance, which is not possible in planar contacts. Similar behavior is expected at heterojunctions between nanotubes and semiconductors. △ Less

Submitted 28 March, 2000; originally announced March 2000.

Comments: 4 pages, to appear in Physical Review Letters