Showing 1–45 of 45 results for author: Lei, S

Transport Evidence for Wigner Crystals in Monolayer MoTe2

Authors: Mingjie Zhang, Zhenyu Wang, Yifan Jiang, Yaotian Liu, Kenji Watanabe, Takashi Taniguchi, Song Liu, Shiming Lei, Yongqing Li, Yang Xu

Abstract: The crystallization of charge carriers, dubbed the Wigner crystal, is anticipated at low densities in clean two-dimensional electronic systems (2DES). While there has been extensive investigation across diverse platforms, probing spontaneous charge and spin ordering is hindered by disorder effects and limited interaction energies. Here, we report transport evidence for Wigner crystals with antifer… ▽ More The crystallization of charge carriers, dubbed the Wigner crystal, is anticipated at low densities in clean two-dimensional electronic systems (2DES). While there has been extensive investigation across diverse platforms, probing spontaneous charge and spin ordering is hindered by disorder effects and limited interaction energies. Here, we report transport evidence for Wigner crystals with antiferromagnetic exchange interactions in high-quality, hexagonal boron nitride encapsulated monolayer MoTe2, a system that achieves a large interaction parameter (r_s) at proper hole densities. A density-tuned metal-insulator transition (MIT) occurring at 3.1E10^11 cm-2 (corresponding to r_s~32) and pronounced nonlinear charge transport in the insulating regime at low temperatures signify the formation of Wigner crystals. Thermal melting of the crystalline phase is observed below approximately 2 K via temperature-dependent nonlinear transport. Magnetoresistance measurements further reveal a substantial enhancement of spin susceptibility as approaching the MIT. The temperature dependence of spin susceptibility in the Wigner crystal phase closely follows the Curie-Weiss law, with the extracted negative Weiss constant illustrating antiferromagnetic exchange interactions. Furthermore, we have found the system exhibits metallic-like differential resistivity under finite DC bias, possibly indicating the existence of a non-equilibrium coherent state in the depinning of Wigner crystals. Our observations establish monolayer MoTe2 as a promising platform for exploring magnetic and dynamic properties of Wigner crystals. △ Less

Submitted 25 June, 2025; originally announced June 2025.

Comments: 25 pages, 4 figures and 8 supplemental figures

Time-bin encoded quantum key distribution over 120 km with a telecom quantum dot source

Authors: Jipeng Wang, Joscha Hanel, Zenghui Jiang, Raphael Joos, Michael Jetter, Eddy Patrick Rugeramigabo, Simone Luca Portalupi, Peter Michler, Xiao-Yu Cao, Hua-Lei Yin, Shan Lei, Jingzhong Yang, Michael Zopf, Fei Ding

Abstract: Quantum key distribution (QKD) with deterministic single photon sources has been demonstrated over intercity fiber and free-space channels. The previous implementations relied mainly on polarization encoding schemes, which are susceptible to birefringence, polarization-mode dispersion and polarization-dependent loss in practical fiber networks. In contrast, time-bin encoding offers inherent robust… ▽ More Quantum key distribution (QKD) with deterministic single photon sources has been demonstrated over intercity fiber and free-space channels. The previous implementations relied mainly on polarization encoding schemes, which are susceptible to birefringence, polarization-mode dispersion and polarization-dependent loss in practical fiber networks. In contrast, time-bin encoding offers inherent robustness and has been widely adopted in mature QKD systems using weak coherent laser pulses. However, its feasibility in conjunction with a deterministic single-photon source has not yet been experimentally demonstrated. In this work, we construct a time-bin encoded QKD system employing a high-brightness quantum dot (QD) single-photon source operating at telecom wavelength. Our proof-of-concept experiment successfully demonstrates the possibility of secure key distribution over fiber link of 120 km, while maintaining extraordinary long-term stability over 6 hours of continuous operation. This work provides the first experimental validation of integrating a quantum dot single-photon source with time-bin encoding in a telecom-band QKD system. In addition, it demonstrates the highest secure key rate among the time-bin QKDs based on single-photon sources. This development signifies a substantial advancement in the establishment of a robust and scalable QKD network based on solid-state single-photon technology △ Less

Submitted 18 June, 2025; originally announced June 2025.

Comments: 14 pages, 4 figures

Signatures of unconventional superconductivity near reentrant and fractional quantum anomalous Hall insulators

Authors: Fan Xu, Zheng Sun, Jiayi Li, Ce Zheng, Cheng Xu, Jingjing Gao, Tongtong Jia, Kenji Watanabe, Takashi Taniguchi, Bingbing Tong, Li Lu, Jinfeng Jia, Zhiwen Shi, Shengwei Jiang, Yuanbo Zhang, Yang Zhang, Shiming Lei, Xiaoxue Liu, Tingxin Li

Abstract: Two-dimensional moiré Chern bands provide an exceptional platform for exploring a variety of many-body electronic liquid and solid phases at zero magnetic field within a lattice system. One particular intriguing possibility is that flat Chern bands can, in principle, support exotic superconducting phases together with fractional topological phases. Here, we report the observation of integer and fr… ▽ More Two-dimensional moiré Chern bands provide an exceptional platform for exploring a variety of many-body electronic liquid and solid phases at zero magnetic field within a lattice system. One particular intriguing possibility is that flat Chern bands can, in principle, support exotic superconducting phases together with fractional topological phases. Here, we report the observation of integer and fractional quantum anomalous Hall effects, the reentrant quantum anomalous Hall effect, and superconductivity within the first moiré Chern band of twisted bilayer MoTe2. The superconducting phase emerges from a normal state exhibiting anomalous Hall effects and sustains an large perpendicular critical magnetic field. Our results present the first example of superconductivity emerging within a flat Chern band that simultaneously hosts fractional quantum anomalous effects, a phenomenon never observed in any other systems. Our work expands the understanding of emergent quantum phenomena in moiré Chern bands, and offers a nearly ideal platform for engineering Majorana and parafermion zero modes in gate-controlled hybrid devices. △ Less

Submitted 9 April, 2025; originally announced April 2025.

Anomalous Superconductivity in Twisted MoTe2 Nanojunctions

Authors: Yanyu Jia, Tiancheng Song, Zhaoyi Joy Zheng, Guangming Cheng, Ayelet J Uzan, Guo Yu, Yue Tang, Connor J. Pollak, Fang Yuan, Michael Onyszczak, Kenji Watanabe, Takashi Taniguchi, Shiming Lei, Nan Yao, Leslie M Schoop, N. P. Ong, Sanfeng Wu

Abstract: Introducing superconductivity in topological materials can lead to innovative electronic phases and device functionalities. Here, we present a new strategy for quantum engineering of superconducting junctions in moire materials through direct, on-chip, and fully encapsulated 2D crystal growth. We achieve robust and designable superconductivity in Pd-metalized twisted bilayer molybdenum ditelluride… ▽ More Introducing superconductivity in topological materials can lead to innovative electronic phases and device functionalities. Here, we present a new strategy for quantum engineering of superconducting junctions in moire materials through direct, on-chip, and fully encapsulated 2D crystal growth. We achieve robust and designable superconductivity in Pd-metalized twisted bilayer molybdenum ditelluride (MoTe2) and observe anomalous superconducting effects in high-quality junctions across ~ 20 moire cells. Surprisingly, the junction develops enhanced, instead of weakened, superconducting behaviors, exhibiting fluctuations to a higher critical magnetic field compared to its adjacent Pd7MoTe2 superconductor. Additionally, the critical current further exhibits a striking V-shaped minimum at zero magnetic field. These features are unexpected in conventional Josephson junctions and indeed absent in junctions of natural bilayer MoTe2 created using the same approach. We discuss implications of these observations, including the possible formation of mixed even- and odd-parity superconductivity at the moire junctions. Our results also demonstrate a pathway to engineer and investigate superconductivity in fractional Chern insulators. △ Less

Submitted 6 September, 2024; originally announced September 2024.

Comments: 25 pages, 5 main article figures and 10 supplementary figures

Journal ref: Sci. Adv. 11, eadq5712 (2025) 29 January 2025

Visualizing the internal structure of the charge-density-wave state in CeSbTe

Authors: Xinglu Que, Qingyu He, Lihui Zhou, Shiming Lei, Leslie Schoop, Dennis Huang, Hidenori Takagi

Abstract: The collective reorganization of electrons into a charge density wave has long served as a textbook example of an ordered phase in condensed matter physics. Two-dimensional square lattices with $p$ electrons are well-suited to the realization of charge density waves, due to the anisotropy of the $p$ orbitals and the resulting one dimensionality of the electronic structure. In spite of a long histo… ▽ More The collective reorganization of electrons into a charge density wave has long served as a textbook example of an ordered phase in condensed matter physics. Two-dimensional square lattices with $p$ electrons are well-suited to the realization of charge density waves, due to the anisotropy of the $p$ orbitals and the resulting one dimensionality of the electronic structure. In spite of a long history of study of charge density waves in square-lattice systems, few reports have recognized the significance of a hidden orbital degree of freedom. The degeneracy of $p_x$ and $p_y$ electrons may give rise to orbital patterns in real space that endow the charge density wave with additional broken symmetries or unusual order parameters. Here, we use scanning tunneling microscopy to visualize the internal structure of the charge-density-wave state of CeSbTe, which contains Sb square lattices with 5$p$ electrons. We image atomic-sized, anisotropic lobes of charge density with periodically modulating anisotropy, which we interpret in terms of a superposition of $p_x$ and $p_y$ bond density waves. Our results support the fact that delocalized $p$ orbitals can reorganize into emergent electronic states of matter. △ Less

Submitted 31 March, 2025; v1 submitted 14 August, 2024; originally announced August 2024.

Comments: 21 pages, 6 figures

Journal ref: Nat. Commun. 16, 3053 (2025)

Your Clean Graphene is Still Not Clean

Authors: Ondrej Dyck, Aisha Okmi, Kai Xiao, Sidong Lei, Andrew R. Lupini, Stephen Jesse

Abstract: Efforts aimed at scaling fabrication processes to the level of single atoms, dubbed atom-by-atom fabrication or atomic fabrication, invariably encounter the obstacle of atomic scale cleanliness. When considering atomic fabrication, cleanliness of the base material and purity of the source reservoir from which atomic structures will be built are invariable constraints imposed by laws of physics and… ▽ More Efforts aimed at scaling fabrication processes to the level of single atoms, dubbed atom-by-atom fabrication or atomic fabrication, invariably encounter the obstacle of atomic scale cleanliness. When considering atomic fabrication, cleanliness of the base material and purity of the source reservoir from which atomic structures will be built are invariable constraints imposed by laws of physics and chemistry. As obvious as such statements may be, and regardless of the inevitable consequences for successful atomic fabrication, there is a poignant lack of understanding of the "dirt" (contamination/impurities). Here, we examine hydrocarbon contamination on graphene. Graphene has formed the base substrate for many e-beam-based atomic fabrication studies and many strategies for cleaning graphene have been presented in the literature. One popular method is heating to high temperatures (>500 °C). It is usually inferred that volatile hydrocarbons evaporate into the microscope vacuum system leaving behind pristine graphene. Here, we show through direct image intensity analysis that what appears to be clean graphene can be coated with a thin layer of dynamically diffusing hydrocarbons. This result holds significant implications for approaches to e-beam based atomic fabrication, updates the conceptual model of e-beam induced hydrocarbon deposition, and may extend to hot surfaces generally. △ Less

Submitted 16 October, 2024; v1 submitted 2 July, 2024; originally announced July 2024.

Spontaneous spin chirality reversal and competing phases in the topological magnet EuAl$_4$

Authors: A. M. Vibhakar, D. D. Khalyavin, F. Orlandi, J. M. Moya, S. Lei, E. Morosan, A. Bombardi

Abstract: We demonstrate the spontaneous reversal of spin chirality in a single crystal sample of the intermetallic magnet EuAl$_4$. We solve the nanoscopic nature of each of the four magnetically phases of EuAl$_4$ using resonant magnetic x-ray scattering, and demonstrate all four phases order with single-k incommensurate magnetic modulation vectors. Below 15.4 K the system forms a spin density modulated s… ▽ More We demonstrate the spontaneous reversal of spin chirality in a single crystal sample of the intermetallic magnet EuAl$_4$. We solve the nanoscopic nature of each of the four magnetically phases of EuAl$_4$ using resonant magnetic x-ray scattering, and demonstrate all four phases order with single-k incommensurate magnetic modulation vectors. Below 15.4 K the system forms a spin density modulated spin structure where the spins are orientated in the ab plane perpendicular to the orientation of the magnetic propagation vector. Below 13.2 K a second spin density wave orders with moments aligned parallel to the c-axis, such that the two spin density wave orders coexist. Below 12.2 K a magnetic helix of a single chirality is stabilised across the entire sample. Below 10 K the chirality of the magnetic helix reverses, and the sample remains a single chiral domain. Concomitant with the establishment of the helical magnetic ordering is the lowering of the crystal symmetry to monoclinic, as evidenced the formation of uniaxial charge and spin strip domains. A group theoretical analysis demonstrates that below 12.2 K the symmetry lowers to polar monoclinic, which is necessary to explain the observed asymmetry in the chiral states of the magnetic helix and the spin chiral reversal. We find that in every magnetically ordered phase of EuAl4 the in-plane moment is perpendicular to the orientation of the magnetic propagation vector, which we demonstrate is favoured by magnetic dipolar interactions. △ Less

Submitted 15 March, 2024; originally announced March 2024.

Comments: 11 pages, 7 figures

Anomalous Hall effect in the antiferromagnetic Weyl semimetal SmAlSi

Authors: Yuxiang Gao, Shiming Lei, Eleanor M. Clements, Yichen Zhang, Xue-Jian Gao, Songxue Chi, Kam Tuen Law, Ming Yi, Jeffrey W. Lynn, Emilia Morosan

Abstract: The intrinsic anomalous Hall effect (AHE) has been reported in numerous ferromagnetic (FM) Weyl semimetals. However, AHE in the antiferromagnetic (AFM) or paramagnetic (PM) state of Weyl semimetals has been rarely observed experimentally, and only in centrosymmetric materials. Different mechanisms have been proposed to establish the connection between the AHE and the type of magnetic order. In thi… ▽ More The intrinsic anomalous Hall effect (AHE) has been reported in numerous ferromagnetic (FM) Weyl semimetals. However, AHE in the antiferromagnetic (AFM) or paramagnetic (PM) state of Weyl semimetals has been rarely observed experimentally, and only in centrosymmetric materials. Different mechanisms have been proposed to establish the connection between the AHE and the type of magnetic order. In this paper, we report AHE in both the AFM and PM states of non-centrosymmetric compound SmAlSi. To account for the AHE in non-centrosymmetric Weyl semimetals without FM, we introduce a new mechanism based on magnetic field-induced Weyl nodes evolution. Angle-dependent quantum oscillations in SmAlSi provide evidence for the Weyl points and large AHE in both the PM and the AFM states. The proposed mechanism qualitatively explains the temperature dependence of the anomalous Hall conductivity (AHC), which displays unconventional power law behavior of the AHC in both AFM and PM states of SmAlSi. △ Less

Submitted 24 August, 2024; v1 submitted 13 October, 2023; originally announced October 2023.

Gd-Based Solvated Shells for Defect Passivation of CsPbBr$_3$ Nanoplatelets Enabling Efficient Color-Saturated Blue Electroluminescence

Authors: Haoran Wang, Jingyu Qian, Jiayun Sun, Tong Su, Shiming Lei, Xiaoyu Zhang, Wallace C. H. Choy, Xiao Wei Sun, Kai Wang, Weiwei Zhao

Abstract: Reduced-dimensional CsPbBr$_3$ nanoplatelets (NPLs) are promising candidates for color-saturated blue emitters, yet their electroluminescence performance is hampered by non-radiative recombination, which is associated with bromine vacancies. Here, we show that a post-synthetic treatment of CsPbBr$_3$ NPLs with GdBr$_3$-dimethylformamide (DMF) can effectively eliminate defects while preserving the… ▽ More Reduced-dimensional CsPbBr$_3$ nanoplatelets (NPLs) are promising candidates for color-saturated blue emitters, yet their electroluminescence performance is hampered by non-radiative recombination, which is associated with bromine vacancies. Here, we show that a post-synthetic treatment of CsPbBr$_3$ NPLs with GdBr$_3$-dimethylformamide (DMF) can effectively eliminate defects while preserving the color. According to a combined experimental and theoretical study, Gd$^{3+}$ ions are less reactive with NPLs as a result of compact interaction between them and DMF, and this stable Gd$^{3+}$-DMF solvation structure makes Brions more available and allows them to move more freely. Consequently, defects are rapidly passivated and photoluminescence quantum yield increases dramatically (from 35 to ~100%), while the surface ligand density and emission color remain unchanged. The result is a remarkable electroluminescence efficiency of 2.4% (at 464 nm), one of the highest in pure blue perovskite NPL light-emitting diodes. It is noteworthy that the conductive NPL film shows a high photoluminescence quantum yield of 80%, demonstrating NPLs' significant electroluminescence potential with further device structure design. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Competing charge and magnetic order in the candidate centrosymmetric skyrmion host EuGa$_2$Al$_2$

Authors: A. M. Vibhakar, D. D. Khalyavin, J. M. Moya, P. Manuel, F. Orlandi, S. Lei, E. Morosan, A. Bombardi

Abstract: Eu(Ga$_{1-x}$Al$_x$)$_4$ are centrosymmetric systems that have recently been identified as candidates to stabilise topologically non-trivial magnetic phases, such as skyrmion lattices. In this Letter, we present a high-resolution resonant x-ray and neutron scattering study on EuAl2Ga2 that provides new details of the complex coupling between the electronic ordering phenomena. Our results unambiguo… ▽ More Eu(Ga$_{1-x}$Al$_x$)$_4$ are centrosymmetric systems that have recently been identified as candidates to stabilise topologically non-trivial magnetic phases, such as skyrmion lattices. In this Letter, we present a high-resolution resonant x-ray and neutron scattering study on EuAl2Ga2 that provides new details of the complex coupling between the electronic ordering phenomena. Our results unambiguously demonstrate that the system orders to form a spin density wave with moments aligned perpendicular to the direction of the propagation vector, and upon further cooling, a cycloid with moments in the ab plane, in contrast to what has been reported in the literature. We show that concomitant with the onset of the spin density wave is the suppression of the charge order, indicative of a coupling between the localised 4$f$ electrons and itinerant electron density. Furthermore we demonstrate that the charge density wave order breaks the four-fold symmetry present in the I4/mmm crystal structure, thus declassifying these systems as square-net magnets. △ Less

Submitted 22 March, 2024; v1 submitted 16 April, 2023; originally announced April 2023.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 108.10 (2023), L100404

Real-space and reciprocal-space topology in the Eu(Ga$_{1-x}$Al$_x$)$_4$ square net system

Authors: Jaime M. Moya, Jianwei Huang, Shiming Lei, Kevin Allen, Yuxiang Gao, Yan Sun, Ming Yi, E. Morosan

Abstract: Magnetotransport measurements on the centrosymetric square-net Eu(Ga$_{1-x}$Al$_x$)$_4$ compounds reveal evidence for both reciprocal- and real-space topology. For compositions $0.50 \leq x \leq 0.90$, several intermediate field phases are found by magnetization measurements when $H \parallel c$, where a maximum in the topological Hall effect (THE) is observed, pointing to the existence of topolog… ▽ More Magnetotransport measurements on the centrosymetric square-net Eu(Ga$_{1-x}$Al$_x$)$_4$ compounds reveal evidence for both reciprocal- and real-space topology. For compositions $0.50 \leq x \leq 0.90$, several intermediate field phases are found by magnetization measurements when $H \parallel c$, where a maximum in the topological Hall effect (THE) is observed, pointing to the existence of topological (real-space topology) or non-coplanar spin textures. For $0.25 \leq x \leq 0.39$, magnetization measurements reveal an intermediate field state, but no transition is visible in the Hall measurements. For $x = 0.15$, only one magnetic transition occurs below the Néel temperature $T_N$, and no intermediate field spin reorientations are observed. The Hall effect varies smoothly before the spin-polarized (SP) state. However, in the SP state, Hall measurements reveal a large anomalous Hall effect (AHE) for all compositions, a consequence of reciprocal-space topology. Density functional theory calculations in the paramagnetic state indeed reveal a Dirac point that lies very near the Fermi energy, which is expected to split into Weyl nodes in the SP state, thereby explaining the observed AHE. These results suggest the Eu(Ga$_{1-x}$Al$_x$)$_4$ family is a rare material platform where real- and reciprocal-space topology exist in a single material platform. △ Less

Submitted 6 February, 2023; originally announced February 2023.

Ultrafast Dynamics of the Topological Semimetal GdSb$_{x}$Te$_{2-x-δ}$ In the Presence and Absence of a Charge Density Wave

Authors: Robert J. Kirby, Angela Montanaro, Francesca Giusti, André Koch-Liston, Shiming Lei, Ioannis Petrides, Prineha Narang, Kenneth S. Burch, Daniele Fausti, Gregory D. Scholes, Leslie M. Schoop

Abstract: Time-resolved dynamics in charge-density-wave materials have revealed interesting out-of-equilibrium electronic responses. However these are typically only performed in a single material possessing a CDW. As such, it is challenging to separate subtle effects originating from the CDW. Here, we report on the ultrafast dynamics of the GdSb$_{x}$Te$_{2-x-δ}$ series of materials where E$_{F}$ can be tu… ▽ More Time-resolved dynamics in charge-density-wave materials have revealed interesting out-of-equilibrium electronic responses. However these are typically only performed in a single material possessing a CDW. As such, it is challenging to separate subtle effects originating from the CDW. Here, we report on the ultrafast dynamics of the GdSb$_{x}$Te$_{2-x-δ}$ series of materials where E$_{F}$ can be tuned, resulting in a change from an undistorted tetraganal phase to a CDW with a wavevector that depends on $x$. Using mid-infrared, near-infrared, and visible excitation, we find the dynamics are sensitive to both E$_{F}$ and the presence of the CDW. Specifically, as the Sb content of the compounds increases, transient spectral features shift to higher probe energies. In addition, we observe an enhanced lifetime and change in the sign of the transient signal upon removing the CDW with high Sb concentrations. Finally, we reveal fluence- and temperature-dependent photo-induced responses of the differential reflectivity, which provide evidence of transient charge density wave suppression in related telluride materials. Taken together our results provide a blueprint for future ultrafast studies of CDW systems. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Kramers nodal lines and Weyl fermions in SmAlSi

Authors: Yichen Zhang, Yuxiang Gao, Xue-Jian Gao, Shiming Lei, Zhuoliang Ni, Ji Seop Oh, Jianwei Huang, Ziqin Yue, Marta Zonno, Sergey Gorovikov, Makoto Hashimoto, Donghui Lu, Jonathan D. Denlinger, Robert J. Birgeneau, Junichiro Kono, Liang Wu, Kam Tuen Law, Emilia Morosan, Ming Yi

Abstract: Kramers nodal lines (KNLs) have recently been proposed theoretically as a special type of Weyl line degeneracy connecting time-reversal invariant momenta. KNLs are robust to spin orbit coupling and are inherent to all non-centrosymmetric achiral crystal structures, leading to unusual spin, magneto-electric, and optical properties. However, their existence in in real quantum materials has not been… ▽ More Kramers nodal lines (KNLs) have recently been proposed theoretically as a special type of Weyl line degeneracy connecting time-reversal invariant momenta. KNLs are robust to spin orbit coupling and are inherent to all non-centrosymmetric achiral crystal structures, leading to unusual spin, magneto-electric, and optical properties. However, their existence in in real quantum materials has not been experimentally established. Here we gather the experimental evidence pointing at the presence of KNLs in SmAlSi, a non-centrosymmetric metal that develops incommensurate spin density wave order at low temperature. Using angle-resolved photoemission spectroscopy, density functional theory calculations, and magneto-transport methods, we provide evidence suggesting the presence of KNLs, together with observing Weyl fermions under the broken inversion symmetry in the paramagnetic phase of SmAlSi. We discuss the nesting possibilities regarding the emergent magnetic orders in SmAlSi. Our results provide a solid basis of experimental observations for exploring correlated topology in SmAlSi. △ Less

Submitted 9 June, 2023; v1 submitted 24 October, 2022; originally announced October 2022.

Comments: 40 pages, 5 figures, 1 table

Journal ref: Commun. Phys. 6, 134 (2023)

Charge density wave-generated Fermi surfaces in NdTe$_3$

Authors: Alla Chikina, Henriette Lund, Marco Bianchi, Davide Curcio, Kirstine J. Dalgaard, Martin Bremholm, Shiming Lei, Ratnadwip Singha, Leslie M. Schoop, Philip Hofmann

Abstract: The electronic structure of NdTe$_3$ in the charge density wave phase (CDW) is investigated by angle-resolved photoemission spectroscopy. The combination of high-quality crystals and careful surface preparation reveals subtle and previously unobserved details in the Fermi surface topology, allowing an interpretation of the rich and unexplained quantum oscillations in the rare earth tritellurides R… ▽ More The electronic structure of NdTe$_3$ in the charge density wave phase (CDW) is investigated by angle-resolved photoemission spectroscopy. The combination of high-quality crystals and careful surface preparation reveals subtle and previously unobserved details in the Fermi surface topology, allowing an interpretation of the rich and unexplained quantum oscillations in the rare earth tritellurides RTe$_3$. In particular, several closed Fermi surface elements can be observed that are related to CDW-induced replicas of the original bands, leading to the curious situation in which a CDW does not only remove Fermi surface elements but creates new ones that are observable in transport experiments. Moreover, a large residual Fermi surface is found in the CDW gap, very close to the position of the gapped normal-state Fermi surface. Its area agrees very well with high-frequency quantum oscillations in NdTe$_3$ and its presence is explained by strong electron-phonon coupling combined with the quasi one-dimensional character of the CDW. Finally, we identify the origin of the low-frequency $α$ quantum oscillations ubiquitous for the lighter R elements in the RTe$_3$ family and responsible for the high mobility in these compounds. △ Less

Submitted 9 September, 2022; originally announced September 2022.

Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$

Authors: Shiming Lei, Kevin Allen, Jianwei Huang, Jaime M. Moya, Tsz Chun Wu, Brian Casas, Yichen Zhang, Ji Seop Oh, Makoto Hashimoto, Donghui Lu, Jonathan Denlinger, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Luis Balicas, Robert Birgeneau, Matthew S. Foster, Ming Yi, Yan Sun, Emilia Morosan

Abstract: Magnetic topological semimetals (TSMs) allow for an effective control of the topological electronic states by tuning the spin configuration, and therefore are promising materials for next-generation electronic and spintronic applications. Of magnetic TSMs, Weyl nodal-line (NL) semimetals likely have the most tunability, and yet they are the least experimentally studied so far due to the scarcity o… ▽ More Magnetic topological semimetals (TSMs) allow for an effective control of the topological electronic states by tuning the spin configuration, and therefore are promising materials for next-generation electronic and spintronic applications. Of magnetic TSMs, Weyl nodal-line (NL) semimetals likely have the most tunability, and yet they are the least experimentally studied so far due to the scarcity of material candidates. Here, using a combination of angle-resolved photoemission spectroscopy and quantum oscillation measurements, together with density functional theory calculations, we identify the square-net compound EuGa4 as a new magnetic Weyl nodal ring (NR) semimetal, in which the line nodes form closed rings in the vicinity of the Fermi level. Remarkably, the Weyl NR states show distinct Landau quantization with clear spin splitting upon application of a magnetic field. At 2 K in a field of 14 T, the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more than two orders of magnitude larger than that of other known magnetic TSMs. High field magnetoresistance measurements indicate no saturation up to 40 T. Our theoretical model indicates that the nonsaturating MR naturally arises as a consequence of the Weyl NR state. Our work thus point to the realization of Weyl NR states in square-net magnetic materials, and opens new avenues for the design of magnetic TSMs with very large magnetoresistance. △ Less

Submitted 14 December, 2022; v1 submitted 12 August, 2022; originally announced August 2022.

Journal ref: Nature Communications 14, 5812 (2023)

Eavesdropping on competing condensates by the edge supercurrent in a Weyl superconductor

Authors: Stephan Kim, Shiming Lei, Leslie M. Schoop, R. J. Cava, N. P. Ong

Abstract: In a topological insulator the metallic surface states are easily distinguished from the insulating bulk states (FuKane07). By contrast, in a topological superconductor (FuKane08,Qi,FuBerg,Oppen), much less is known about the relationship between an edge supercurrent and the bulk pair condensate. Can we force their pairing symmetries to be incompatible? In the superconducting state of the Weyl sem… ▽ More In a topological insulator the metallic surface states are easily distinguished from the insulating bulk states (FuKane07). By contrast, in a topological superconductor (FuKane08,Qi,FuBerg,Oppen), much less is known about the relationship between an edge supercurrent and the bulk pair condensate. Can we force their pairing symmetries to be incompatible? In the superconducting state of the Weyl semimetal MoTe$_2$, an edge supercurrent is observed as oscillations in the current-voltage (\emph{I-V}) curves induced by fluxoid quantization (Wang). We have found that the $s$-wave pairing potential of supercurrent injected from niobium contacts is incompatible with the intrinsic pair condensate in MoTe$_2$. The incompatibility leads to strong stochasticity in the switching current $I_c$ as well as other anomalous properties such as an unusual antihysteretic behavior of the ``wrong'' sign. Under supercurrent injection, the fluxoid-induced edge oscillations survive to much higher magnetic fields \emph{H}. Interestingly, the oscillations are either very noisy or noise-free depending on the pair potential that ends up dictating the edge pairing. Using the phase noise as a sensitive probe that eavesdrops on the competiting bulk states, we uncover an underlying blockade mechanism whereby the intrinsic condensate can pre-emptively block proximitization by the Nb pair potential depending on the history. △ Less

Submitted 6 June, 2023; v1 submitted 1 August, 2022; originally announced August 2022.

Comments: 11 pages, 6 figures

Phase tuning of multiple Andreev reflections of Dirac fermions and the Josephson supercurrent in Al-MoTe2-Al junctions

Authors: Zheyi Zhu, Stephan Kim, Shiming Lei, Leslie M. Schoop, R. J. Cava, N. P. Ong

Abstract: When a normal metal $N$ is sandwiched between two superconductors, the energy gaps in the latter act as walls that confine electrons in $N$ in a square-well potential. If the voltage $V$ across $N$ is finite, an electron injected into the well undergoes multiple Andreev reflections (MAR) until it gains enough energy to overcome the energy barrier. Because each reflection converts an electron to a… ▽ More When a normal metal $N$ is sandwiched between two superconductors, the energy gaps in the latter act as walls that confine electrons in $N$ in a square-well potential. If the voltage $V$ across $N$ is finite, an electron injected into the well undergoes multiple Andreev reflections (MAR) until it gains enough energy to overcome the energy barrier. Because each reflection converts an electron to a hole (or vice versa), while creating (or destroying) a Cooper pair, the MAR process shuttles a stream of pairs across the junction. An interesting question is, given a finite $V$, what percentage of the shuttled pairs end up as a Josephson supercurrent? This fraction does not seem to have been measured. Here we show that, in high-transparency junctions based on the type II Dirac semimetal MoTe$_2$, the MAR leads to a stair-case profile in the current-voltage ($I$-$V$) response, corresponding to pairs shuttled incoherently by the $n^{th}$-order process. By varying the phase $\varphi$ across the junction, we demonstrate that a Josephson supercurrent ${\bf J}_{\rm s}\sim \sin\varphi$ co-exists with the MAR steps, even at large $V$. The observed linear increase in the amplitude of ${\bf J}_{\rm s}$ with $n$ (for small $n$) implies that ${\bf J}_{\rm s}$ originates from the population of pairs that are coherently shuttled. We infer that the MAR steps and the supercurrent are complementary aspects of the Andreev process. The experiment yields the percentage of shuttled pairs that form the supercurrent. At large $V$, the coherent fraction is initially linear in $n$. However, as $V\to 0$ ($n\gg 1$), almost all the pairs end up as the observed Josephson supercurrent. △ Less

Submitted 8 December, 2021; originally announced December 2021.

Comments: 12 pages, 6 figures

Journal ref: PNAS 119, e2204468119 (2022)

Axial Higgs Mode Detected by Quantum Pathway Interference in RTe3

Authors: Yiping Wang, Ioannis Petrides, Grant McNamara, Md Mofazzel Hosen, Shiming Lei, Yueh-Chun Wu, James L. Hart, Hongyan Lv, Jun Yan, Di Xiao, Judy J. Cha, Prineha Narang, Leslie M. Schoop, Kenneth S. Burch

Abstract: The observation of the Higgs boson solidified the standard model of particle physics. However, explanations of anomalies (e.g. dark matter) rely on further symmetry breaking calling for an undiscovered axial Higgs mode. In condensed matter the Higgs was seen in magnetic, superconducting and charge density wave(CDW) systems. Uncovering a low energy mode's vector properties is challenging, requiring… ▽ More The observation of the Higgs boson solidified the standard model of particle physics. However, explanations of anomalies (e.g. dark matter) rely on further symmetry breaking calling for an undiscovered axial Higgs mode. In condensed matter the Higgs was seen in magnetic, superconducting and charge density wave(CDW) systems. Uncovering a low energy mode's vector properties is challenging, requiring going beyond typical spectroscopic or scattering techniques. Here, we discover an axial Higgs mode in the CDW system RTe3 using the interference of quantum pathways. In RTe3 (R=La,Gd), the electronic ordering couples bands of equal or different angular momenta. As such, the Raman scattering tensor associated to the Higgs mode contains both symmetric and antisymmetric components, which can be excited via two distinct, but degenerate pathways. This leads to constructive or destructive interference of these pathways, depending on the choice of the incident and Raman scattered light polarization. The qualitative behavior of the Raman spectra is well-captured by an appropriate tight-binding model including an axial Higgs mode. The elucidation of the antisymmetric component provides direct evidence that the Higgs mode contains an axial vector representation (i.e. a pseudo-angular momentum) and hints the CDW in RTe3 is unconventional. Thus we provide a means for measuring collective modes quantum properties without resorting to extreme experimental conditions. △ Less

Submitted 4 December, 2021; originally announced December 2021.

Incommensurate magnetic orders and topological Hall effect in the square-net centrosymmetric EuGa$_2$Al$_2$ system

Authors: Jaime M. Moya, Shiming Lei, Eleanor M. Clements, Caitlin S. Kengle, Stella Sun, Kevin Allen, Qizhi Li, Y. Y. Peng, Ali A. Husain, Matteo Mitrano, Matthew J. Krogstad, Raymond Osborn, Anand B. Puthirath, Songxue Chi, L. Debeer-Schmitt, J. Gaudet, P. Abbamonte, Jeffrey W. Lynn, E. Morosan

Abstract: Neutron diffraction on the centrosymmetric square-net magnet EuGa$_2$Al$_2$ reveals multiple incommensurate magnetic states (AFM1,2,3) in zero field. In applied field, a new magnetic phase (A) is identified from magnetization and transport measurements, bounded by two of the $μ_0H$~=~0 incommensurate magnetic phases (AFM1,helical and AFM3, cycloidal) with different moment orientations. Moreover, m… ▽ More Neutron diffraction on the centrosymmetric square-net magnet EuGa$_2$Al$_2$ reveals multiple incommensurate magnetic states (AFM1,2,3) in zero field. In applied field, a new magnetic phase (A) is identified from magnetization and transport measurements, bounded by two of the $μ_0H$~=~0 incommensurate magnetic phases (AFM1,helical and AFM3, cycloidal) with different moment orientations. Moreover, magneto-transport measurements indicate the presence of a topological Hall effect, with maximum values centered in the A phase. Together, these results render EuGa$_2$Al$_2$ a material with non-coplanar or topological spin texture in applied field. X-ray diffraction reveals an out-of-plane (OOP) charge density wave (CDW) below $T_{CDW} \sim$ 50 K while the magnetic propagation vector lies in plane below $T_N$ = 19.5 K. Together these data point to a new route to realizing in-plane non-collinear spin textures through an OOP CDW. In turn, these non-collinear spin textures may be unstable against the formation of topological spin textures in an applied field. △ Less

Submitted 22 September, 2022; v1 submitted 22 October, 2021; originally announced October 2021.

Journal ref: Phys. Rev. Materials 6, 074201 (2022)

Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization

Authors: Ganesh Ji Omar, Weilong Kong, Hariom Jani, Mengsha Li, Jun Zhou, Zhi Shiuh Lim, Saurav Prakash, Shengwei Zeng, Sonu Hooda, Thirumalai Venkatesan, Yuan Ping Feng, Stephen J. Pennycook, Shen Lei, A. Ariando

Abstract: We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in th… ▽ More We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics. △ Less

Submitted 5 November, 2022; v1 submitted 13 October, 2021; originally announced October 2021.

Comments: Total 30 Pages and 18 figures in the main article including supplementary information

Journal ref: Phys. Rev. Lett. 129, 187203 (2022)

Fast Activation of Graphene with Corrugated Surface and its Role in Improved Aqueous Electrochemical Capacitors

Authors: Longsheng Zhong, Chang Wu, Xiaojing Zhu, Shulai Lei, Guijie Liang, Sepidar Sayyar, Biao Gao, Liangxu Lin

Abstract: In graphene based materials, the energy storage capacity is usually improved by rich porous structures with extremely high surface area. By utilizing surface corrugations, this work shows an alternative strategy to activate graphene materials for large capacitance. We demonstrate how to simply fabricate such activated graphene and how these surface structures helped to realize considerable specifi… ▽ More In graphene based materials, the energy storage capacity is usually improved by rich porous structures with extremely high surface area. By utilizing surface corrugations, this work shows an alternative strategy to activate graphene materials for large capacitance. We demonstrate how to simply fabricate such activated graphene and how these surface structures helped to realize considerable specific capacitance (e.g., electrode capacitance of ~340 F g-1 at 5 mV s-1 and device capacitance of ~ 343 F g-1 at 1.7 A g-1) and power performance (e.g., power density of 50 and 2500 W kg-1 at the energy density of ~10.7 and 1.53 Wh kg-1, respectively) in aqueous system, which are comparable to and even better than those of highly activated graphene materials with ultra-high surface area. This work demonstrates a new path to enhance the capacity of carbon-based materials, which could be developed and combined with other systems for various improved energy storage applications. △ Less

Submitted 5 October, 2021; originally announced October 2021.

Comments: 30 pages, 17 figures; Lead contact: Liangxu Lin

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

Authors: J. W. Lee, K. Eom, T. R. Paudel, B. Wang, H. Lu, H. Huyan, S. Lindemann, S. Ryu, H. Lee, T. H. Kim, Y. Yuan, J. A. Zorn, S. Lei, W. Gao, T. Tybell, V. Gopalan, X. Pan, A. Gruverman, L. Q. Chen, E. Y. Tsymbal, C. B. Eom

Abstract: The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry… ▽ More The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices. △ Less

Submitted 16 September, 2021; originally announced September 2021.

One-Dimensional Luttinger Liquids in a Two-Dimensional Moiré Lattice

Authors: Pengjie Wang, Guo Yu, Yves H. Kwan, Yanyu Jia, Shiming Lei, Sebastian Klemenz, F. Alexandre Cevallos, Ratnadwip Singha, Trithep Devakul, Kenji Watanabe, Takashi Taniguchi, Shivaji L. Sondhi, Robert J. Cava, Leslie M. Schoop, Siddharth A. Parameswaran, Sanfeng Wu

Abstract: The Luttinger liquid (LL) model of one-dimensional (1D) electronic systems provides a powerful tool for understanding strongly correlated physics including phenomena such as spin-charge separation. Substantial theoretical efforts have attempted to extend the LL phenomenology to two dimensions (2D), especially in models of closely packed arrays of 1D quantum wires, each being described as a LL. Suc… ▽ More The Luttinger liquid (LL) model of one-dimensional (1D) electronic systems provides a powerful tool for understanding strongly correlated physics including phenomena such as spin-charge separation. Substantial theoretical efforts have attempted to extend the LL phenomenology to two dimensions (2D), especially in models of closely packed arrays of 1D quantum wires, each being described as a LL. Such coupled-wire models have been successfully used to construct 2D anisotropic non-Fermi liquids, quantum Hall states, topological phases, and quantum spin liquids. However, an experimental demonstration of high-quality arrays of 1D LLs suitable for realizing these models remains absent. Here we report the experimental realization of 2D arrays of 1D LLs with crystalline quality in a moiré superlattice made of twisted bilayer tungsten ditelluride (tWTe$_{2}$). Originating from the anisotropic lattice of the monolayer, the moiré pattern of tWTe$_{2}$ hosts identical, parallel 1D electronic channels, separated by a fixed nanoscale distance, which is tunable by the interlayer twist angle. At a twist angle of ~ 5 degrees, we find that hole-doped tWTe$_{2}$ exhibits exceptionally large transport anisotropy with a resistance ratio of ~ 1000 between two orthogonal in-plane directions. The across-wire conductance exhibits power-law scaling behaviors, consistent with the formation of a 2D anisotropic phase that resembles an array of LLs. Our results open the door for realizing a variety of correlated and topological quantum phases based on coupled-wire models and LL physics. △ Less

Submitted 13 December, 2021; v1 submitted 9 September, 2021; originally announced September 2021.

Comments: 29 pages, 4 Main Figures + 13 Extended Data Figures

Journal ref: Nature 605, 57-62 (2022)

Evolving Devil's staircase magnetization from tunable charge density waves in nonsymmorphic Dirac semimetals

Authors: Ratnadwip Singha, Tyger H. Salters, Samuel M. L. Teicher, Shiming Lei, Jason F. Khoury, N. Phuan Ong, Leslie M. Schoop

Abstract: While several magnetic topological semimetals have been discovered in recent years, their band structures are far from ideal, often obscured by trivial bands at the Fermi energy. Square-net materials with clean, linearly dispersing bands show potential to circumvent this issue. CeSbTe, a square-net material, features multiple magnetic field-controllable topological phases. Here, it is shown that i… ▽ More While several magnetic topological semimetals have been discovered in recent years, their band structures are far from ideal, often obscured by trivial bands at the Fermi energy. Square-net materials with clean, linearly dispersing bands show potential to circumvent this issue. CeSbTe, a square-net material, features multiple magnetic field-controllable topological phases. Here, it is shown that in this material, even higher degrees of tunability can be achieved by changing the electron count at the square-net motif. Increased electron filling results in structural distortion and formation of charge density waves (CDWs). The modulation wave-vector evolves continuously leading to a region of multiple discrete CDWs and a corresponding complex "Devil's staircase" magnetic ground state. A series of fractionally quantized magnetization plateaus are observed, which implies direct coupling between CDW and a collective spin-excitation. It is further shown that the CDW creates a robust idealized non-symmorphic Dirac semimetal, thus providing access to topological systems with rich magnetism. △ Less

Submitted 14 July, 2021; originally announced July 2021.

Comments: 17 pages, 15 figures, Revised version to appear in Advanced Materials

Journal ref: Advanced Materials 33, 2103476 (2021)

Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide

Authors: Prasanna D. Patil, Milinda Wasala, Sujoy Ghosh, Sidong Lei, Saikat Talapatra

Abstract: Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of opto-electronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estima… ▽ More Understanding broadband photoconductive behaviour in two dimensional layered materials are important in order to utilize them for a variety of opto-electronic applications. Here we present our results of photocurrent spectroscopy measurements performed on few layer Indium Selenide (InSe) flakes. Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy was performed in order to estimate the band-gap energies E_g(T) of InSe at various temperatures. Our measurements indicate that room temperature E_g value for InSe flake was ~ 1.254 eV, which increased to a value of ~ 1.275 eV at low temperatures. The estimation of Debye temperatures by analysing the observed experimental variation of E_g as a function of T using several theoretical models is presented and discussed. △ Less

Submitted 10 April, 2021; originally announced April 2021.

Role of Layer Thickness and Field-Effect Mobility on Photoresponsivity of Indium Selenide (InSe) Based Phototransistors

Authors: Milinda Wasala, Prasanna Patil, Sujoy Ghosh, Lincoln Weber, Sidong Lei, Saikat Talapatra

Abstract: Understanding and optimizing the properties of photoactive two-dimensional (2D) Van der Waals solids are crucial for developing optoelectronics applications. Here we present a detailed investigation of layer dependent photoconductive behavior of InSe based field-effect transistors (FETs). InSe based FETs with five different channel thickness (t, 20 nm < t < 100 nm) were investigated with a continu… ▽ More Understanding and optimizing the properties of photoactive two-dimensional (2D) Van der Waals solids are crucial for developing optoelectronics applications. Here we present a detailed investigation of layer dependent photoconductive behavior of InSe based field-effect transistors (FETs). InSe based FETs with five different channel thickness (t, 20 nm < t < 100 nm) were investigated with a continuous laser source of λ = 658 nm (1.88 eV) over a wide range of illumination power of 22.8 nW < P < 1.29 μW. All the devices studied, showed signatures of photogating, however, our investigations suggest that the photoresponsivities are strongly dependent on the thickness of the conductive channel. A correlation between the field-effect mobility (μFE) values (as a function of channel thickness, t) and photoresponsivity (R) indicates that in general R increases with increasing μFE (decreasing t) and vice versa. The maximum responsivity of ~ 7.84 A/W and ~ 0.59 A/W was obtained for the device with t = 20 nm and t = 100 nm respectively. These values could substantially increase under the application of a gate voltage. The structure-property correlation-based studies presented here indicate the possibility of tuning the optical properties of InSe based photo-FETs for a variety of applications related to photodetector and/or active layers in solar cells. △ Less

Submitted 30 January, 2021; originally announced February 2021.

Unraveling Ultrafast Photoionization in Hexagonal Boron Nitride

Authors: Lianjie Xue, Song Liu, Yang Hang, Adam M. Summers, Derrek J. Wilson, Xinya Wang, Pingping Chen, Thomas G. Folland, Jordan A. Hachtel, Hongyu Shi, Sajed Hosseini-Zavareh, Suprem R. Das, Shuting Lei, Zhuhua Zhang, Christopher M. Sorensen, Wanlin Guo, Joshua D. Caldwell, James H. Edgar, Cosmin I. Blaga, Carlos A. Trallero-Herrero

Abstract: The non-linear response of dielectrics to intense, ultrashort electric fields has been a sustained topic of interest for decades with one of its most important applications being femtosecond laser micro/nano-machining. More recently, renewed interests in strong field physics of solids were raised with the advent of mid-infrared femtosecond laser pulses, such as high-order harmonic generation, opti… ▽ More The non-linear response of dielectrics to intense, ultrashort electric fields has been a sustained topic of interest for decades with one of its most important applications being femtosecond laser micro/nano-machining. More recently, renewed interests in strong field physics of solids were raised with the advent of mid-infrared femtosecond laser pulses, such as high-order harmonic generation, optical-field-induced currents, etc. All these processes are underpinned by photoionization (PI), namely the electron transfer from the valence to the conduction bands, on a time scale too short for phononic motion to be of relevance. Here, in hexagonal boron nitride, we reveal that the bandgap can be finely manipulated by femtosecond laser pulses as a function of field polarization direction with respect to the lattice, in addition to the field's intensity. It is the modification of bandgap that enables the ultrafast PI processes to take place in dielectrics. We further demonstrate the validity of the Keldysh theory in describing PI in dielectrics in the few TW/cm2 regime. △ Less

Submitted 26 January, 2021; v1 submitted 25 January, 2021; originally announced January 2021.

Comments: 13 pages, 4 figures

Complex magnetic phases enriched by charge density waves in topological semimetals GdSb_xTe_{2-x-δ}

Authors: Shiming Lei, Audrey Saltzman, Leslie M. Schoop

Abstract: The interplay of crystal symmetry, magnetism, band topology and electronic correlation can be the origin of quantum phase transitions in condensed matter. Particularly, square-lattice materials have been serving as a versatile platform to study the rich phenomena resulting from that interplay. In this work, we report a detailed magnetic study on the square-lattice based magnetic topological semime… ▽ More The interplay of crystal symmetry, magnetism, band topology and electronic correlation can be the origin of quantum phase transitions in condensed matter. Particularly, square-lattice materials have been serving as a versatile platform to study the rich phenomena resulting from that interplay. In this work, we report a detailed magnetic study on the square-lattice based magnetic topological semimetals GdSb_{x}Te_{2-x-δ}. We report the H-T magnetic phase diagrams along three crystallographic orientations and show that, for those materials where a charge density wave distortion is known to exist, many different magnetic phases are identified. In addition, the data provides a clue to the existence of an antiferromagnetic skyrmion phase, which has been theoretically predicted but not experimentally confirmed in a bulk material yet. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Journal ref: Phys. Rev. B 103, 134418 (2021)

Field-induced quantum critical point in the new itinerant antiferromagnet Ti$_3$Cu$_4$

Authors: Jaime M. Moya, Alannah M. Hallas, Vaideesh Loganathan, C. -L. Huang, Lazar Kish, Adam A. Aczel, J. Beare, Y. Cai, G. M. Luke, Franziska Weickert, Andriy H. Nevidomskyy, Christos D. Malliakas, Mercouri G. Kanatzidis, Shiming Lei, Kyle Bayliff, E. Morosan

Abstract: New phases of matter emerge at the edge of magnetic instabilities. In local moment systems, such as heavy fermions, the magnetism can be destabilized by pressure, chemical doping, and, rarely, by magnetic field, towards a zero-temperature transition at a quantum critical point (QCP). Even more rare are instances of QCPs induced by pressure or doping in itinerant moment systems, with no known examp… ▽ More New phases of matter emerge at the edge of magnetic instabilities. In local moment systems, such as heavy fermions, the magnetism can be destabilized by pressure, chemical doping, and, rarely, by magnetic field, towards a zero-temperature transition at a quantum critical point (QCP). Even more rare are instances of QCPs induced by pressure or doping in itinerant moment systems, with no known examples of analogous field-induced \textit{T} = 0 transitions. Here we report the discovery of a new itinerant antiferromagnet with no magnetic constituents, in single crystals of Ti$_3$Cu$_4$ with $T_N$ = 11.3 K. Band structure calculations point to an orbital-selective, spin density wave ground state, a consequence of the square net structural motif in Ti$_3$Cu$_4$. A small magnetic field, $H_C$ = 4.87 T, suppresses the long-range order via a continuous second-order transition, resulting in a field-induced QCP. The magnetic Grüneisen ratio diverges as $H \rightarrow H_C$ and $T\rightarrow0$, with a sign change at $H_C$ and $T^{-1}$ scaling at $H~=~H_C$, providing evidence from thermodynamic measurements for quantum criticality for $H \parallel c$. Non-Fermi liquid (NFL) to Fermi liquid (FL) crossover is observed close to the QCP, as revealed by the power law behavior of the electrical resistivity. △ Less

Submitted 21 February, 2022; v1 submitted 26 October, 2020; originally announced October 2020.

Journal ref: Communications Physics volume 5, Article number: 136 (2022)

Evidence for a Monolayer Excitonic Insulator

Authors: Yanyu Jia, Pengjie Wang, Cheng-Li Chiu, Zhida Song, Guo Yu, Berthold Jäck, Shiming Lei, Sebastian Klemenz, F. Alexandre Cevallos, Michael Onyszczak, Nadezhda Fishchenko, Xiaomeng Liu, Gelareh Farahi, Fang Xie, Yuanfeng Xu, Kenji Watanabe, Takashi Taniguchi, B. Andrei Bernevig, Robert J. Cava, Leslie M. Schoop, Ali Yazdani, Sanfeng Wu

Abstract: The interplay between topology and correlations can generate a variety of quantum phases, many of which remain to be explored. Recent advances have identified monolayer WTe2 as a promising material for doing so in a highly tunable fashion. The ground state of this two-dimensional (2D) crystal can be electrostatically tuned from a quantum spin Hall insulator (QSHI) to a superconductor. However, muc… ▽ More The interplay between topology and correlations can generate a variety of quantum phases, many of which remain to be explored. Recent advances have identified monolayer WTe2 as a promising material for doing so in a highly tunable fashion. The ground state of this two-dimensional (2D) crystal can be electrostatically tuned from a quantum spin Hall insulator (QSHI) to a superconductor. However, much remains unknown about the gap-opening mechanism of the insulating state. Here we report evidence that the QSHI is also an excitonic insulator (EI), arising from the spontaneous formation of electron-hole bound states (excitons). We reveal the presence of an intrinsic insulating state at the charge neutrality point (CNP) in clean samples and confirm the correlated nature of this charge-neutral insulator by tunneling spectroscopy. We provide evidence against alternative scenarios of a band insulator or a localized insulator and support the existence of an EI phase in the clean limit. These observations lay the foundation for understanding a new class of correlated insulators with nontrivial topology and identify monolayer WTe2 as a promising candidate for exploring quantum phases of ground-state excitons. △ Less

Submitted 3 January, 2022; v1 submitted 11 October, 2020; originally announced October 2020.

Comments: 39 pages; Nat. Phys. (2021)

Landau Quantization and Highly Mobile Fermions in an Insulator

Authors: Pengjie Wang, Guo Yu, Yanyu Jia, Michael Onyszczak, F. Alexandre Cevallos, Shiming Lei, Sebastian Klemenz, Kenji Watanabe, Takashi Taniguchi, Robert J. Cava, Leslie M. Schoop, Sanfeng Wu

Abstract: In strongly correlated materials, quasiparticle excitations can carry fractional quantum numbers. An intriguing possibility is the formation of fractionalized, charge-neutral fermions, e.g., spinons and fermionic excitons, that result in neutral Fermi surfaces and Landau quantization in an insulator. While previous experiments in quantum spin liquids, topological Kondo insulators, and quantum Hall… ▽ More In strongly correlated materials, quasiparticle excitations can carry fractional quantum numbers. An intriguing possibility is the formation of fractionalized, charge-neutral fermions, e.g., spinons and fermionic excitons, that result in neutral Fermi surfaces and Landau quantization in an insulator. While previous experiments in quantum spin liquids, topological Kondo insulators, and quantum Hall systems have hinted at charge-neutral Fermi surfaces, evidence for their existence remains far from conclusive. Here we report experimental observation of Landau quantization in a two dimensional (2D) insulator, i.e., monolayer tungsten ditelluride (WTe$_{2}$), a large gap topological insulator. Using a detection scheme that avoids edge contributions, we uncover strikingly large quantum oscillations in the monolayer insulator's magnetoresistance, with an onset field as small as ~ 0.5 tesla. Despite the huge resistance, the oscillation profile, which exhibits many periods, mimics the Shubnikov-de Haas oscillations in metals. Remarkably, at ultralow temperatures the observed oscillations evolve into discrete peaks near 1.6 tesla, above which the Landau quantized regime is fully developed. Such a low onset field of quantization is comparable to high-mobility conventional two-dimensional electron gases. Our experiments call for further investigation of the highly unusual ground state of the WTe$_{2}$ monolayer. This includes the influence of device components and the possible existence of mobile fermions and charge-neutral Fermi surfaces inside its insulating gap. △ Less

Submitted 13 January, 2021; v1 submitted 11 October, 2020; originally announced October 2020.

Comments: 33 pages, 4 Main Figures + 10 Extended Data Figures + 1 SI Figure

Journal ref: Nature 589, 225-229 (2021)

Band Engineering of Dirac Semimetals using Charge Density Waves

Authors: Shiming Lei, Samuel M. L. Teicher, Andreas Topp, Kehan Cai, Jingjing Lin, Fanny Rodolakis, Jessica L. McChesney, Maxim Krivenkov, Dmitry Marchenko, Andrei Varykhalov, Christian R. Ast, Roberto Car, Jennifer Cano, Maia G. Vergniory, N. Phuan Ong, Leslie M. Schoop

Abstract: New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals and Weyl semimetals. In the last few years, large efforts have been performed to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For… ▽ More New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals and Weyl semimetals. In the last few years, large efforts have been performed to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For example, topological bands are frequently convoluted with trivial ones, and band structure features of interest can appear far below the Fermi level. This leaves just a handful of materials that are intensively studied. Finding strategies to design new topological materials is a solution. Here we introduce a new mechanism that is based on charge density waves and non-symmorphic symmetry to design an idealized Dirac semimetal. We then show experimentally that the antiferromagnetic compound GdSb$_{0.46}$Te$_{1.48}$ is a nearly ideal Dirac semimetal based on the proposed mechanism, meaning that most interfering bands at the Fermi level are suppressed. Its highly unusual transport behavior points to a thus far unknown regime, in which Dirac carriers with Fermi energy very close to the node seem to gradually localize in the presence of lattice and magnetic disorder. △ Less

Submitted 21 June, 2021; v1 submitted 1 September, 2020; originally announced September 2020.

A Cleanroom in a Glovebox

Authors: Mason J. Gray, Narendra Kumar, Ryan O'Connor, Marcel Hoek, Erin Sheridan, Meaghan C. Doyle, Marisa L. Romanelli, Gavin B. Osterhoudt, Yiping Wang, Vincent Plisson, Shiming Lei, Ruidan Zhong, Bryan Rachmilowitz, He Zhao, Hikari Kitadai, Steven Shepard, Leslie M. Schoop, G. D. Gu, Ilija Zeljkovic, Xi Ling, K. S. Burch

Abstract: The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use t… ▽ More The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use the equipment for creating and characterizing materials, calls for a dramatic reduction in the cost to create and operate such facilities. To this end, we present our cleanroom-in-a-glovebox, a system which allows for the fabrication and characterization of devices in an inert argon atmosphere. We demonstrate the ability to perform a wide range of characterization as well as fabrication steps, without the need for a dedicated room, all in an argon environment. Connection to a vacuum suitcase is also demonstrated to enable receiving from and transfer to various ultra-high vacuum (UHV) equipment including molecular-beam epitaxy (MBE) and scanning tunneling microscopy (STM). △ Less

Submitted 27 July, 2020; originally announced July 2020.

Journal ref: Review of Scientific Instruments 91, 073909 (2020)

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Authors: Wei-Chih Cheng, Minghao He, Siqi Lei, Liang Wang, Jingyi Wu, Fanming Zeng, Qiaoyu Hu, Feng Zhao, Mansun Chan, Guangrui, Xia, Hongyu Yu

Abstract: In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable… ▽ More In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable on-current and RF current gain to those without stressors. Moreover, the off-current (I_off) was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the lower electric field in AlGaN, which suppressed the gate injection current. The dual-layer stressor scheme supports strain engineering as an effective approach in the pursuit of the normally-off operation of AlGaN/GaN HEMTs. △ Less

Submitted 31 July, 2019; originally announced August 2019.

Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

Authors: Jingyi Wu, Siqi Lei, Wei-Chih Cheng, Robert Sokolovskij, Qing Wang, Guangrui, Xia, Hongyu Yu

Abstract: O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop layer in 3 cycles. The surface roughness improved to 0.33 nm after 7 digital etch cycles. Compared to the dry etch only approach, this technique cause… ▽ More O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop layer in 3 cycles. The surface roughness improved to 0.33 nm after 7 digital etch cycles. Compared to the dry etch only approach, this technique causes less damages. It was shown to be effective in precisely controlling the AlGaN etch depth required for recessed-AlGaN HEMTs. △ Less

Submitted 31 July, 2019; originally announced August 2019.

High mobility in a van der Waals layered antiferromagnetic metal

Authors: Shiming Lei, Jingjing Lin, Yanyu Jia, Mason Gray, Andreas Topp, Gelareh Farahi, Sebastian Klemenz, Tong Gao, Fanny Rodolakis, Jessica L. McChesney, Christian R. Ast, Ali Yazdani, Kenneth S. Burch, Sanfeng Wu, N. Phuan Ong, Leslie M. Schoop

Abstract: Magnetic van der Waals (vdW) materials have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far magnetic vdW materials are mainly insulating or semiconducting, and none of them possesses a high electronic mobility - a property that is rare in layered vdW materials in general. The realization of a magnetic high-mobility vdW material would op… ▽ More Magnetic van der Waals (vdW) materials have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far magnetic vdW materials are mainly insulating or semiconducting, and none of them possesses a high electronic mobility - a property that is rare in layered vdW materials in general. The realization of a magnetic high-mobility vdW material would open the possibility for novel magnetic twistronic or spintronic devices. Here we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2 V-1 s-1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3 is comparable to that of black phosphorus, and is only surpassed by graphite. By mechanical exfoliation, we further demonstrate that GdTe3 can be exfoliated to ultrathin flakes of three monolayers, and that the magnetic order and relatively high mobility is retained in approximately 20-nm-thin flakes. △ Less

Submitted 14 August, 2019; v1 submitted 7 March, 2019; originally announced March 2019.

Journal ref: Sci. Adv. Vol. 6, no. 6, eaay6407 (2020)

Ultrafast quasiparticle dynamics in correlated semimetal Ca$_3$Ru$_2$O$_7$

Authors: Yakun Yuan, Peter Kissin, Danilo Puggioni, Kevin Cremin, Shiming Lei, Yu Wang, Zhiqiang Mao, James M. Rondinelli, Richard D. Averitt, Venkatraman Gopalan

Abstract: The correlated polar semimetal Ca$_3$Ru$_2$O$_7$ exhibits a rich phase diagram including two magnetic transitions ($T_N$=56 K and $T_C$=48 K) with the appearance of an insulating-like pseudogap (at $T_C$). In addition, there is a crossover back to metallic behavior at $T^*$=30 K, the origin of which is still under debate. We utilized ultrafast optical pump optical probe spectroscopy to investigate… ▽ More The correlated polar semimetal Ca$_3$Ru$_2$O$_7$ exhibits a rich phase diagram including two magnetic transitions ($T_N$=56 K and $T_C$=48 K) with the appearance of an insulating-like pseudogap (at $T_C$). In addition, there is a crossover back to metallic behavior at $T^*$=30 K, the origin of which is still under debate. We utilized ultrafast optical pump optical probe spectroscopy to investigate quasiparticle dynamics as a function of temperature in this enigmatic quantum material. We identify two dynamical processes, both of which are influenced by the onset of the pseudogap. This includes electron-phonon relaxation and, below $T_C$, the onset of a phonon bottleneck hindering the relaxation of quasiparticles across the pseudogap. We introduce a gap-modified two-temperature model to describe the temperature dependence of electron-phonon thermalization, and use the Rothwarf-Taylor to model the phonon bottleneck. In conjunction with density functional theory, our experimental results synergistically reveal the origin of the $T$-dependent pseudogap. Further, our data and analysis indicate that $T^*$ emerges as a natural consequence of $T$-dependent gapping out of carriers, and does not correspond to a separate electronic transition. Our results highlight the value of low fluence ultrafast optics as a sensitive probe of low energy electronic structure, thermodynamic parameters, and transport properties of Ruddlesden-Popper ruthenates. △ Less

Submitted 8 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. B 99, 155111 (2019)

Topological Semimetals in Square-Net Materials

Authors: Sebastian Klemenz, Shiming Lei, Leslie M. Schoop

Abstract: Many materials crystallize in structure types that feature a square-net of atoms. While these compounds can exhibit many different properties, some members of this family are topological materials. Within the square-net-based topological materials, the observed properties are rich, ranging for example from nodal-line semimetals to a bulk half-integer quantum Hall effect. Hence, the potential for g… ▽ More Many materials crystallize in structure types that feature a square-net of atoms. While these compounds can exhibit many different properties, some members of this family are topological materials. Within the square-net-based topological materials, the observed properties are rich, ranging for example from nodal-line semimetals to a bulk half-integer quantum Hall effect. Hence, the potential for guided design of topological properties is enormous. Here we provide an overview of the crystallographic and electronic properties of these phases and show how they are linked, with the goal of understanding which square-net materials can be topological, and to predict additional examples. We close the review by discussing the experimentally observed electronic properties in this family. △ Less

Submitted 20 August, 2018; originally announced August 2018.

Comments: review article, 25 pages, 9 figures, 2 tables

Journal ref: Annual Reviews of Material Research, Vol 49:185-206, (2019)

A Simple Method to Make the Wang-Landau Sampling Converge

Authors: Shijun Lei

Abstract: We show that a histogram maintained throughout the Wang-Landau (WL) sampling for the energy entries visited during the simulation could be used to make the simulated density of states (DOS) converge. The method is easy to be implemented to the WL sampling with no extra computational cost and bears the advantages of both the WL method and the multicanonical method. We show that a histogram maintained throughout the Wang-Landau (WL) sampling for the energy entries visited during the simulation could be used to make the simulated density of states (DOS) converge. The method is easy to be implemented to the WL sampling with no extra computational cost and bears the advantages of both the WL method and the multicanonical method. △ Less

Submitted 17 June, 2016; originally announced June 2016.

Comments: 6 pages, 3 figures, 1 table

Spatially Resolved Photo-Excited Charge Carrier Dynamics in Phase-Engineered Monolayer MoS2

Authors: Hisato Yamaguchi, Jean-Christophe Blancon, Rajesh Kappera, Sidong Lei, Sina Najmaei, Benjamin D. Mangum, Gautam Gupta, Pulickel M. Ajayan, Jun Lou, Manish Chhowalla, Jared J. Crochet, Aditya D. Mohite

Abstract: A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microsc… ▽ More A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed towards the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption. △ Less

Submitted 17 December, 2014; originally announced December 2014.

Comments: 20 pages, 6 figures, 8 pages of supporting information, accepted to ACS Nano

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Authors: Sina Najmaei, Zheng Liu, Wu Zhou, Xiaolong Zou, Gang Shi, Sidong Lei, Boris I. Yakobson, Juan-Carlos Idrobo, Pulickel M. Ajayan, Jun Lou

Abstract: Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleat… ▽ More Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers. △ Less

Submitted 13 January, 2013; originally announced January 2013.

Comments: Submitted on Jan 6th 2013

A Correction Method for the Density of States

Authors: Shijun Lei

Abstract: We present a correction method for the density of states (DOS) obtained from the generalized ensemble simulations. The DOS is proportionally corrected to match the exact values and/or good approximations known for the system. We demonstrate the validity of the method by applying it to the DOS of 2D Potts model calculated from various generalized ensemble simulations. It is shown that the root-mean… ▽ More We present a correction method for the density of states (DOS) obtained from the generalized ensemble simulations. The DOS is proportionally corrected to match the exact values and/or good approximations known for the system. We demonstrate the validity of the method by applying it to the DOS of 2D Potts model calculated from various generalized ensemble simulations. It is shown that the root-mean-square error of the DOS is reduced by ~50% or more without additional heavy calculations. △ Less

Submitted 14 May, 2012; originally announced May 2012.

Comments: 4 pages, 5 figures

A New History-Driven Algorithm to Calculate the Density of States

Authors: Shijun Lei

Abstract: We present a new Monte Carlo algorithm applying a history-driven mechanism for the calculation of the density of states for classical statistical models. The new method is as efficient as the Wang-Landau method in sampling through the energy range. With the new method, detailed balance is also naturally satisfied in limit and the estimated density of state converges to the exact value. The new met… ▽ More We present a new Monte Carlo algorithm applying a history-driven mechanism for the calculation of the density of states for classical statistical models. The new method is as efficient as the Wang-Landau method in sampling through the energy range. With the new method, detailed balance is also naturally satisfied in limit and the estimated density of state converges to the exact value. The new method could be easily evolved into the multicanonical method to achieve high accuracy. △ Less

Submitted 30 November, 2011; originally announced November 2011.

Comments: 7 pages, 2 figures, 1 table

Photonic analogue of Josephson effect in a dual-species optical-lattice cavity

Authors: Soi-Chan Lei, Tai-Kai Ng, Ray-Kuang Lee

Abstract: We extend the idea of quantum phase transitions of light in the photonic Bose-Hubbard model with interactions to two atomic species by a self-consistent mean field theory. The excitation of two-level atoms interacting with coherent photon fields is analyzed with a finite temperature dependence of the order parameters. Four ground states of the system are found, including an isolated Mott-insulator… ▽ More We extend the idea of quantum phase transitions of light in the photonic Bose-Hubbard model with interactions to two atomic species by a self-consistent mean field theory. The excitation of two-level atoms interacting with coherent photon fields is analyzed with a finite temperature dependence of the order parameters. Four ground states of the system are found, including an isolated Mott-insulator phase and three different superfluid phases. Like two weakly coupled superconductors, our proposed dual-species lattice system shows a photonic analogue of Josephson effect. The dynamics of the proposed two species model provides a promising quantum simulator for possible quantum information processes. △ Less

Submitted 7 March, 2010; originally announced March 2010.

Non-left-handed transmission and bianisotropic effect in a [pi]-shaped metallic metamaterials

Authors: Z. G. Dong, S. Y. Lei, Q. Li, M. X. Xu, H. Liu, T. Li, F. M. Wang, S. N. Zhu

Abstract: A [pi]-shaped metallic metamaterial (geometrically, a combination medium of C-shaped resonators and continuous wires) is proposed to numerically investigate its transmission band near the resonant frequency, where otherwise it should be a negative-permeability (or negative-permittivity) stop band if either the C-shaped or continuous-wire constituent is separately considered. However, in contrast… ▽ More A [pi]-shaped metallic metamaterial (geometrically, a combination medium of C-shaped resonators and continuous wires) is proposed to numerically investigate its transmission band near the resonant frequency, where otherwise it should be a negative-permeability (or negative-permittivity) stop band if either the C-shaped or continuous-wire constituent is separately considered. However, in contrast to the left-handed materials (LHMs)composed of split-ring resonators and wires as well as other metallic LHMs, this resonant transmission is a non-left-handed one as a result of the intrinsic bianisotropic effect attributed to the electrically asymmetric configuration of this [pi]-shaped metamaterial. △ Less

Submitted 23 February, 2007; v1 submitted 23 February, 2007; originally announced February 2007.

Comments: 19 pages, 6 figures

Journal ref: PHYSICAL REVIEW B 75, 075117(2007)