Showing 1–21 of 21 results for author: Lehtinen, J

Millikelvin Si-MOSFETs for Quantum Electronics

Authors: Nikolai Yurttagül, Markku Kainlauri, Jan Toivonen, Sushan Khadka, Antti Kanniainen, Arvind Kumar, Diego Subero, Juha Muhonen, Mika Prunnila, Janne S. Lehtinen

Abstract: Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at deep cryogenic temperatures, below 1 K, requires switching performance beyond levels facilitated by currently available CMOS technologies. We have manufactured fu… ▽ More Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at deep cryogenic temperatures, below 1 K, requires switching performance beyond levels facilitated by currently available CMOS technologies. We have manufactured fully depleted silicon-on-insulator MOSFETs tailored for overcoming the power dissipation barrier towards sub-1 K applications. With these cryo-optimized transistors we achieve a major milestone of reaching subthreshold swing of 0.3 mV/dec at 420 mK, thereby enabling very-large-scale integration of cryo-CMOS electronics for ultra-low temperature applications. △ Less

Submitted 1 October, 2024; originally announced October 2024.

Efficient electronic cooling above 2 K by niobium-based superconducting tunnel junctions

Authors: J. Hätinen, A. Ronzani, R. P. Loreto, E. Mykkänen, A. Kemppinen, K. Viisanen, T. Rantanen, J. Geisor, J. Lehtinen, M. Ribeiro, J-P. Kaikkonen, O. Prakash, V. Vesterinen, W. Förbom, E. T. Mannila, M. Kervinen, J. Govenius, M. Prunnila

Abstract: Replacing the bulky cryoliquid-based cooling stages of cryoenabled instruments by chip-scale refrigeration is envisioned to disruptively reduce the system size similar to microprocessors did for computers. Electronic refrigerators based on superconducting tunnel junctions have been anticipated to provide a solution, but reaching the necessary above the 1-K operation temperature range has remained… ▽ More Replacing the bulky cryoliquid-based cooling stages of cryoenabled instruments by chip-scale refrigeration is envisioned to disruptively reduce the system size similar to microprocessors did for computers. Electronic refrigerators based on superconducting tunnel junctions have been anticipated to provide a solution, but reaching the necessary above the 1-K operation temperature range has remained a goal out of reach for several decades. We show efficient electronic refrigeration by Al-AlO$_x$-Nb superconducting tunnel junctions starting from bath temperatures above 2 K. The junctions can deliver electronic cooling power up to approximately mW/mm$^2$, which enables us to demonstrate tunnel-current-driven electron temperature reduction from 2.4 K to below 1.6 K (34% relative cooling) against the phonon bath. Our work shows that the key material of integrated superconducting circuits - niobium - enables powerful cryogenic refrigerator technology. This result is a prerequisite for practical cryogenic chip-scale refrigerators and, at the same time, it introduces a new electrothermal tool for quantum heat-transport experiments. △ Less

Submitted 13 December, 2024; v1 submitted 13 March, 2024; originally announced March 2024.

Journal ref: Phys. Rev. Applied 22, 064048 (2024)

Effect of ion irradiation on superconducting thin films

Authors: Katja Kohopää, Alberto Ronzani, Robab Najafi Jabdaraghi, Arijit Bera, Mário Ribeiro, Dibyendu Hazra, Jorden Senior, Mika Prunnila, Joonas Govenius, Janne S. Lehtinen, Antti Kemppinen

Abstract: We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that ion irradiation increases normal-state resistivity in all our films, which is expected to enable tuning their superconducting properties, for example, toward high… ▽ More We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that ion irradiation increases normal-state resistivity in all our films, which is expected to enable tuning their superconducting properties, for example, toward higher kinetic inductance. We observe an increase of superconducting transition temperature for Al and MoSi, and a decrease for Nb, NbN, and TiN. In MoSi, ion irradiation also improves the mixing of the two materials. We demonstrate fabrication of an amorphous and homogeneous film of MoSi with uniform thickness, which is promising, e.g., for superconducting nanowire single-photon detectors. △ Less

Submitted 19 June, 2024; v1 submitted 20 March, 2023; originally announced March 2023.

Thermal resistance in superconducting flip-chip assemblies

Authors: Joel Hätinen, Emma Mykkänen, Klaara Viisanen, Alberto Ronzani, Antti Kemppinen, Lassi Lehtisyrjä, Janne S. Lehtinen, Mika Prunnila

Abstract: Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected… ▽ More Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected by compression bonding via indium bumps. The total thermal contact area between the chips is 0.306 mm$^2$ and we find that the temperature dependence of the inter-chip thermal resistance follows the power law of $αT^{-3}$, with $α= 7.7-15.4$ K$^4$$μ$m$^2$/nW. The $T^{-3}$ relation indicates phononic interfacial thermal resistance, which is supported by the vanishing contribution of the electrons to the thermal conduction, due to the superconducting interconnections. Such a thermal resistance value can introduce a thermalization bottleneck in particular at cryogenic temperatures. This can be detrimental for some applications, yet it can also be harnessed. We provide an example of both cases by estimating the parasitic overheating of a cryogenic flip-chip assembly operated under various heat loads as well as simulate the performance of solid-state junction microrefrigerators utilizing the observed thermal isolation. △ Less

Submitted 10 October, 2023; v1 submitted 2 March, 2023; originally announced March 2023.

Comments: 6 pages, 4 figures, 1 table

Journal ref: Thermal resistance in superconducting flip-chip assemblies. Appl. Phys. Lett. 1 October 2023; 123 (15): 152202

Scalable on-chip multiplexing of silicon single and double quantum dots

Authors: Heorhii Bohuslavskyi, Alberto Ronzani, Joel Hätinen, Arto Rantala, Andrey Shchepetov, Panu Koppinen, Janne S. Lehtinen, Mika Prunnila

Abstract: Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers. For this goal, ultra-low-power on-chip cryogenic CMOS (cryo-CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. W… ▽ More Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers. For this goal, ultra-low-power on-chip cryogenic CMOS (cryo-CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. We report on-chip interfacing of tunable electron and hole QDs by a 64-channel cryo-CMOS multiplexer with less-than-detectable static power dissipation. We analyze charge noise and measure state-of-the-art addition energies and gate lever arm parameters in the QDs. We correlate low noise in QDs and sharp turn-on characteristics in cryogenic transistors, both fabricated with the same gate stack. Finally, we demonstrate that our hybrid quantum-CMOS technology provides a route to scalable interfacing of a large number of QD devices, enabling, for example, variability analysis and QD qubit geometry optimization, which are prerequisites for building large-scale silicon-based quantum computers. △ Less

Submitted 10 October, 2024; v1 submitted 25 August, 2022; originally announced August 2022.

Comments: accepted manuscript; 5 figures, 18 supplementary figures, and 1 table in supplementary materials

Journal ref: Communications Physics 7, 323 (2024)

Superconducting insulators and localization of Cooper pairs

Authors: Konstantin Yu. Arutyunov, Janne S. Lehtinen, Alexey Radkevich, Andrew G. Semenov, Andrei D. Zaikin

Abstract: Rapid miniaturization of electronic devices and circuits demands profound understanding of fluctuation phenomena at the nanoscale. Superconducting nanowires -- serving as important building blocks for such devices -- may seriously suffer from fluctuations which tend to destroy long-range order and suppress superconductivity. In particular, quantum phase slips (QPS) proliferating at low temperature… ▽ More Rapid miniaturization of electronic devices and circuits demands profound understanding of fluctuation phenomena at the nanoscale. Superconducting nanowires -- serving as important building blocks for such devices -- may seriously suffer from fluctuations which tend to destroy long-range order and suppress superconductivity. In particular, quantum phase slips (QPS) proliferating at low temperatures may turn a quasi-one-dimensional superconductor into a resistor or an insulator. Here, we introduce a physical concept of QPS-controlled localization of Cooper pairs that may occur even in uniform nanowires without any dielectric barriers being a fundamental manifestation of the flux-charge duality in superconductors. We demonstrate -- both experimentally and theoretically -- that deep in the "insulating" state such nanowires actually exhibit non-trivial superposition of superconductivity and weak Coulomb blockade of Cooper pairs generated by quantum tunneling of magnetic fluxons across the wire. △ Less

Submitted 4 July, 2021; originally announced July 2021.

Comments: 7+2 pages,5+2 figures

Journal ref: Communications Physics 4, 146 (2021)

Cascaded superconducting junction refrigerators: optimization and performance limits

Authors: A. Kemppinen, A. Ronzani, E. Mykkänen, J. Hätinen, J. S. Lehtinen, M. Prunnila

Abstract: We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we de… ▽ More We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we develop an approximate method that takes into account self-heating effects but still allows us to optimize the cascade a single stage at a time. We design a cascade consisting of energy-efficient refrigeration stages, which makes cooling of, e.g., quantum devices from above 1 K to below 100 mK a realistic experimental target. △ Less

Submitted 5 August, 2021; v1 submitted 29 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 119, 052603 (2021)

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Authors: Jingyu Duan, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle Lam, Alberto Ronzani, Andrey Shchepetov, Panu Koppinen, Mika Prunnila, Fernando Gonzalez-Zalba, John J. L. Morton

Abstract: We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem… ▽ More We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Efficient thermionic operation and phonon isolation by a semiconductor-superconductor junction

Authors: Emma Mykkänen, Janne S. Lehtinen, Leif Grönberg, Andrey Shchepetov, Andrey V. Timofeev, David Gunnarsson, Antti Kemppinen, Antti J. Manninen, Mika Prunnila

Abstract: Control of heat flux at small length scales is crucial for numerous solid-state devices and systems. In addition to the thermal management of information and communication devices the mastering of heat transfer channels down to the nanoscale also enable, e.g., new memory concepts, high sensitivity detectors and sensors, energy harvesters and compact solid-state refrigerators. Electronic coolers an… ▽ More Control of heat flux at small length scales is crucial for numerous solid-state devices and systems. In addition to the thermal management of information and communication devices the mastering of heat transfer channels down to the nanoscale also enable, e.g., new memory concepts, high sensitivity detectors and sensors, energy harvesters and compact solid-state refrigerators. Electronic coolers and thermal detectors for electromagnetic radiation, especially, rely on the maximization of electro-thermal response and blockade of phonon transport. In this work, we propose and demonstrate that efficient electro-thermal operation and phonon transfer blocking can be achieved in a single solid-state thermionic junction. Our experimental demonstration relies on suspended semiconductor-superconductor junctions where the electro-thermal response arises from the superconducting energy gap, and the phonon blocking naturally results from the transmission bottleneck at the junction. We suspend different size degenerately doped silicon chips (up to macroscopic scale) directly from the junctions and cool these by biasing the junctions. The electronic cooling operation characteristics are accompanied by measurement and analysis of the thermal resistance components in the structures indicating the operation principle of phonon blocking in the junctions. △ Less

Submitted 9 September, 2018; originally announced September 2018.

Journal ref: Science Advances 6 eaax9191 (2020)

Nanobolometer with Ultralow Noise Equivalent Power

Authors: R. Kokkoniemi, J. Govenius, V. Vesterinen, R. E. Lake, A. M. Gunyho, K. Y. Tan, S. Simbierowicz, L. Grönberg, J. Lehtinen, M. Prunnila, J. Hassel, O. -P. Saira, M. Möttönen

Abstract: Since the introduction of bolometers more than a century ago, they have been applied in a broad spectrum of contexts ranging from security and the construction industry to particle physics and astronomy. However, emerging technologies and missions call for faster bolometers with lower noise. Here, we demonstrate a nanobolometer that exhibits roughly an order of magnitude lower noise equivalent pow… ▽ More Since the introduction of bolometers more than a century ago, they have been applied in a broad spectrum of contexts ranging from security and the construction industry to particle physics and astronomy. However, emerging technologies and missions call for faster bolometers with lower noise. Here, we demonstrate a nanobolometer that exhibits roughly an order of magnitude lower noise equivalent power, $20\textrm{ zW}/\sqrt{\textrm{Hz}}$, than previously reported for any bolometer. Importantly, it is more than an order of magnitude faster than other low-noise bolometers, with a time constant of 30 $μ$s at $60\textrm{ zW}/\sqrt{\textrm{Hz}}$. These results suggest a calorimetric energy resolution of $0.3\textrm{ zJ}=h\times 0.4$ THz with a time constant of 30 $μ$s. Thus the introduced nanobolometer is a promising candidate for future applications requiring extreme precision and speed such as those in astronomy and terahertz photon counting. △ Less

Submitted 26 June, 2018; v1 submitted 25 June, 2018; originally announced June 2018.

Flux-driven Josephson parametric amplifier for sub-GHz frequencies fabricated with side-wall passivated spacer junction technology

Authors: Slawomir Simbierowicz, Visa Vesterinen, Leif Grönberg, Janne Lehtinen, Mika Prunnila, Juha Hassel

Abstract: We present experimental results on a Josephson parametric amplifier tailored for readout of ultra-sensitive thermal microwave detectors. In particular, we discuss the impact of fabrication details on the performance. We show that the small volume of deposited dielectric materials enabled by the side-wall passivated spacer niobium junction technology leads to robust operation across a wide range of… ▽ More We present experimental results on a Josephson parametric amplifier tailored for readout of ultra-sensitive thermal microwave detectors. In particular, we discuss the impact of fabrication details on the performance. We show that the small volume of deposited dielectric materials enabled by the side-wall passivated spacer niobium junction technology leads to robust operation across a wide range of operating temperatures up to 1.5 K. The flux-pumped amplifier has gain in excess of 20 dB in three-wave mixing and its center frequency is tunable between 540 MHz and 640 MHz. At 600 MHz, the amplifier adds 105 mK $\pm$ 9 mK of noise, as determined with the hot/cold source method. Phase-sensitive amplification is demonstrated with the device. △ Less

Submitted 18 May, 2018; originally announced May 2018.

Superconducting MoSi nanowires

Authors: J. S. Lehtinen, A. Kemppinen, E. Mykkänen, M. Prunnila, A. J. Manninen

Abstract: We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth to optimise, e.g., the resistivity of the alloy for potential applications in quantum phase slip devices and superconducting nanowire single-photon detectors.… ▽ More We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth to optimise, e.g., the resistivity of the alloy for potential applications in quantum phase slip devices and superconducting nanowire single-photon detectors. The wires have effective diameters from 42 to 79 nm, enabling the observation of crossover from conventional superconductivity to regimes affected by thermal and quantum fluctuations. In the smallest diameter wire and at temperatures well below the superconducting critical temperature, we observe residual resistance and negative magnetoresistance, which can be considered as fingerprints of quantum phase slips. △ Less

Submitted 13 October, 2017; v1 submitted 22 August, 2017; originally announced August 2017.

Side-wall spacer passivated sub-um Josephson junction fabrication process

Authors: Leif Grönberg, Mikko Kiviranta, Visa Vesterinen, Janne Lehtinen, Slawomir Simbierowicz, Juho Luomahaara, Mika Prunnila, Juha Hassel

Abstract: We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a side-wall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited lin… ▽ More We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a side-wall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1 -- 3.0 kA/cm$^2$. We discuss the applicability of the junction process in the context of different applications, such as, SQUID magnetometers and Josephson parametric amplifiers. △ Less

Submitted 9 March, 2018; v1 submitted 20 June, 2017; originally announced June 2017.

Comments: 8 pages, 4 figures

Journal ref: Supercond. Sci. Technol. 30, 125016, 2017

Characterising superconducting filters using residual microwave background

Authors: J. S. Lehtinen, E. Mykkänen, A. Kemppinen, D. Golubev, S. V. Lotkhov, A. J. Manninen

Abstract: A normal metal - superconductor hybrid single-electron trap with tunable barrier is utilized as a tool for spectrum analysis at the extremely low signal levels, using only well filtered cryogenic microwave background as a photon source in the frequency range from about 50 to 210 GHz. We probe millimeter wave propagation in two superconducting systems: a Josephson junction array around its plasma f… ▽ More A normal metal - superconductor hybrid single-electron trap with tunable barrier is utilized as a tool for spectrum analysis at the extremely low signal levels, using only well filtered cryogenic microwave background as a photon source in the frequency range from about 50 to 210 GHz. We probe millimeter wave propagation in two superconducting systems: a Josephson junction array around its plasma frequency, and a superconducting titanium film in the limit when the photon energies are larger than the superconducting energy gap. This regime is relevant for improving the performance of cryogenic quantum devices but is hard to access with conventional techniques. We show that relatively simple models can be used to describe the essential properties of the studied components. △ Less

Submitted 27 February, 2017; v1 submitted 23 September, 2016; originally announced September 2016.

The quantum phase slip phenomenon in superconducting nanowires with high-impedance environment

Authors: K. Yu. Arutyunov, J. S. Lehtinen, T. Rantala

Abstract: Quantum phase slip (QPS) is the particular manifestation of quantum fluctuations of the order parameter of a current-biased quasi-1D superconductor. The QPS event(s) can be considered a dynamic equivalent of tunneling through conventional Josephson junction containing static in space and time weak link(s). At low temperatures T<<Tc the QPS effect leads to finite resistivity of narrow superconducti… ▽ More Quantum phase slip (QPS) is the particular manifestation of quantum fluctuations of the order parameter of a current-biased quasi-1D superconductor. The QPS event(s) can be considered a dynamic equivalent of tunneling through conventional Josephson junction containing static in space and time weak link(s). At low temperatures T<<Tc the QPS effect leads to finite resistivity of narrow superconducting channels and suppresses persistent currents in tiny nanorings. Here we demonstrate that the quantum tunneling of phase may result in Coulomb blockade: superconducting nanowire, imbedded in high-Ohmic environment, below a certain bias voltage behaves as an insulator. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Comments: 3 pages, 3 figures

Junctionless Cooper pair transistor

Authors: K. Yu. Arutyunov, J. S. Lehtinen

Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by 2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a super… ▽ More Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by 2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime were used. The current-voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Comments: 6 pages, 3 figures

Insulating State of a Quasi-1-Dimensional Superconductor

Authors: J. S. Lehtinen, T. Rantala, K. Yu. Arutyunov

Abstract: The topic of quantum fluctuations in quasi-1D superconductors, also called quantum phase slips (QPS), has attracted a significant attention. It has been shown that the phenomenon is capable to suppress zero resistivity of ultra-narrow superconducting nanowires at low temperatures T<<Tc and quench persistent currents in tiny nanorings. It has been predicted that a superconducting nanowire in the re… ▽ More The topic of quantum fluctuations in quasi-1D superconductors, also called quantum phase slips (QPS), has attracted a significant attention. It has been shown that the phenomenon is capable to suppress zero resistivity of ultra-narrow superconducting nanowires at low temperatures T<<Tc and quench persistent currents in tiny nanorings. It has been predicted that a superconducting nanowire in the regime of QPS is dual to a Josephson junction. In particular case of an extremely narrow superconducting nanowire embedded in high-impedance environment the duality leads to an intuitively controversial result: the superconductor enters an insulating state. Here we experimentally demonstrate that the I-V characteristic of such a wire indeed shows Coulomb blockade, which disappears with application of critical magnetic field and/or above the critical temperature proving that the effect is related to superconductivity. The system can be considered as the dynamic equivalent of a chain of conventional Josephson junctions. △ Less

Submitted 13 November, 2013; originally announced November 2013.

Comments: 5 pages, 4 figures

Coulomb blockade and Bloch oscillations in superconducting Ti nanowires

Authors: J. S. Lehtinen, K. Zakharov, K. Yu. Arutyunov

Abstract: Quantum fluctuations in quasi-one-dimensional superconducting channels leading to spontaneous changes of the phase of the order parameter by $2π$, alternatively called quantum phase slips (QPS), manifest themselves as the finite resistance well below the critical temperature of thin superconducting nanowires and the suppression of persistent currents in tiny superconducting nanorings. Here we repo… ▽ More Quantum fluctuations in quasi-one-dimensional superconducting channels leading to spontaneous changes of the phase of the order parameter by $2π$, alternatively called quantum phase slips (QPS), manifest themselves as the finite resistance well below the critical temperature of thin superconducting nanowires and the suppression of persistent currents in tiny superconducting nanorings. Here we report the experimental evidence that in a current-biased superconducting nanowire the same QPS process is responsible for the insulating state -- the Coulomb blockade. When exposed to RF radiation, the internal Bloch oscillations can be synchronized with the external RF drive leading to formation of quantized current steps on the I-V characteristic. The effects originate from the fundamental quantum duality of a Josephson junction and a superconducting nanowire governed by QPS -- the QPS junction (QPSJ). △ Less

Submitted 19 September, 2012; originally announced September 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 109, 187001 (2012)

Quantum phase slip phenomenon in superconducting nanowires with low-Ohmic environment

Authors: Janne Lehtinen, Konstantin Arutyunov

Abstract: In a number of recent experiments it has been demonstrated that in ultra-narrow superconducting channels quantum fluctuations of the order parameter, alternatively called quantum phase slips, are responsible for the finite resistance well below the critical temperature. The acceptable agreement between those experiments and the models describing quantum fluctuations in quasi-one-dimensional superc… ▽ More In a number of recent experiments it has been demonstrated that in ultra-narrow superconducting channels quantum fluctuations of the order parameter, alternatively called quantum phase slips, are responsible for the finite resistance well below the critical temperature. The acceptable agreement between those experiments and the models describing quantum fluctuations in quasi-one-dimensional superconductors has been established. However the very concept of the phase slip is justified when these fluctuations are the relatively rare events, meaning that the effective resistance of the system should be much smaller than the normal state equivalent. In this paper we study the limit of the strong quantum fluctuations where the existing models are not applicable. In particular case of ultra-thin titanium nanowires it is demonstrated that below the expected critical temperature the resistance does not demonstrate any trend towards the conventional for a superconductor zero-resistivity state even at negligibly small measuring currents. Application of a small magnetic field leads to an unusual negative magnetoresistance, which becomes more pronounced at lower temperatures. The origin of the negative magnetoresistance effect is not clear. △ Less

Submitted 10 July, 2012; originally announced July 2012.

Quantum phase slip phenomenon in ultra-narrow superconducting nanorings

Authors: K. Yu. Arutyunov, T. T. Hongisto, J. S. Lehtinen, L. I. Leino, A. L. Vasiliev

Abstract: The smaller the system, typically - the higher is the impact of fluctuations. In narrow superconducting wires sufficiently close to the critical temperature Tc thermal fluctuations are responsible for the experimentally observable finite resistance. Quite recently it became possible to fabricate sub-10 nm superconducting structures, where the finite resistivity was reported within the whole range… ▽ More The smaller the system, typically - the higher is the impact of fluctuations. In narrow superconducting wires sufficiently close to the critical temperature Tc thermal fluctuations are responsible for the experimentally observable finite resistance. Quite recently it became possible to fabricate sub-10 nm superconducting structures, where the finite resistivity was reported within the whole range of experimentally obtainable temperatures. The observation has been associated with quantum fluctuations capable to quench zero resistivity in superconducting nanowires even at temperatures T-->0. Here we demonstrate that in tiny superconducting nanorings the same phenomenon is responsible for suppression of another basic attribute of superconductivity - persistent currents - dramatically affecting their magnitude, the period and the shape of the current-phase relation. The effect is of fundamental importance demonstrating the impact of quantum fluctuations on the ground state of a macroscopically coherent system, and should be taken into consideration in various nanoelectronic applications. △ Less

Submitted 24 May, 2012; originally announced May 2012.

Comments: 20 pages, 4 figures

Journal ref: Nature: Scientific Reports 2, 293 (2012)

Evidence of quantum phase slip effect in titanium nanowires

Authors: Janne Lehtinen, Timo Sajavaara, Konstantin Arutyunov, Alexander Vasiliev

Abstract: Electron transport properties of titanium nanowires were experimentally studied. Below the effective diameter $\lesssim$ 50 nm all samples demonstrated a pronounced broadening of the $R(T)$ dependencies, which cannot be accounted for thermal flcutuations. An extensive microscopic and elemental analysis indicates the absence of structural or/and geometrical imperfection capable to broaden the the… ▽ More Electron transport properties of titanium nanowires were experimentally studied. Below the effective diameter $\lesssim$ 50 nm all samples demonstrated a pronounced broadening of the $R(T)$ dependencies, which cannot be accounted for thermal flcutuations. An extensive microscopic and elemental analysis indicates the absence of structural or/and geometrical imperfection capable to broaden the the $R(T)$ transition to such an extent. We associate the effect with quantum flucutuations of the order parameter. △ Less

Submitted 20 June, 2011; originally announced June 2011.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 85, 094508 (2012)