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Growth of Highly Conductive PtSe2 Films Controlled by Raman Metrics for High-Frequency Photodetectors and Optoelectronic Mixers at 1.55 μm
Authors:
Eva Desgué,
Ivan Verschueren,
Marin Tharrault,
Djordje Dosenovic,
Ludovic Largeau,
Eva Grimaldi,
Delphine Pommier,
Doriane Jussey,
Bérangère Moreau,
Dominique Carisetti,
Laurent Gangloff,
Patrick Plouhinec,
Naomie Messudom,
Zineb Bouyid,
Didier Pribat,
Julien Chaste,
Abdelkarim Ouerghi,
Bernard Plaçais,
Emmanuel Baudin,
Hanako Okuno,
Pierre Legagneux
Abstract:
Two-dimensional PtSe2 exhibits outstanding intrinsic properties such as high carrier mobility, tunable bandgap, broadband absorption and air stability, making it ideal for (opto)electronic applications. However, achieving high crystalline quality films with controlled properties on low cost and insulating substrates remains challenging. Here, highly crystalline semimetallic PtSe2 films are grown b…
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Two-dimensional PtSe2 exhibits outstanding intrinsic properties such as high carrier mobility, tunable bandgap, broadband absorption and air stability, making it ideal for (opto)electronic applications. However, achieving high crystalline quality films with controlled properties on low cost and insulating substrates remains challenging. Here, highly crystalline semimetallic PtSe2 films are grown by molecular beam epitaxy on sapphire substrates. It is shown that a post-growth annealing remarkably improves the out-of-plane crystallinity of multilayer films and leads to the record film conductivity of 1.6 mS. In-depth structural analyses reveal the strong influence of the domain arrangement within the film on its electrical conductivity. Moreover, it is demonstrated that the commonly used Eg Raman peak width, but also the A1g peak width, are both effective metrics for evaluating the quality of PtSe2: films with thinner Eg and A1g peaks exhibit higher in-plane and out-of-plane crystalline quality, as well as higher conductivity. Finally, coplanar waveguides integrating a semimetallic PtSe2 channel are fabricated on a 2-inch sapphire substrate to demonstrate optoelectronic devices operating at the 1.55 um telecom wavelength: photodetectors with a record bandwidth of 60 GHz and the first PtSe2-based optoelectronic mixer with a 30 GHz bandwidth.
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Submitted 26 March, 2025;
originally announced March 2025.
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The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions
Authors:
Marin Tharrault,
Sabrine Ayari,
Mehdi Arfaoui,
Eva Desgué,
Romaric Le Goff,
Pascal Morfin,
José Palomo,
Michael Rosticher,
Sihem Jaziri,
Bernard Plaçais,
Pierre Legagneux,
Francesca Carosella,
Christophe Voisin,
Robson Ferreira,
Emmanuel Baudin
Abstract:
$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove inst…
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$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed light on the semiconductor to semimetal transition and to explore the effect of stacking and excitons on the optical absorption.
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Submitted 7 August, 2024; v1 submitted 3 November, 2023;
originally announced November 2023.
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Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals
Authors:
Marin Tharrault,
Eva Desgué,
Dominique Carisetti,
Bernard Plaçais,
Christophe Voisin,
Pierre Legagneux,
Emmanuel Baudin
Abstract:
Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline $\rm{PtSe_2}$ can be grown with various crystalline qualities, getting insight into the monocrystalline…
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Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline $\rm{PtSe_2}$ can be grown with various crystalline qualities, getting insight into the monocrystalline intrinsic properties remains challenging. We report on the study of exfoliated 1 to 10 layers $\rm{PtSe_2}$ by Raman spectroscopy, featuring record linewidth. The clear Raman signatures allow layer-thickness identification and provides a reference metrics to assess crystal quality of grown films.
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Submitted 12 February, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
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30 GHz optoelectronic mixing in CVD graphene
Authors:
A. Montanaro,
S. Mzali,
J. -P. Mazellier,
O. Bezencenet,
C. Larat,
S. Molin,
P. Legagneux,
D. Dolfi,
B. Dlubak,
P. Seneor,
M. -B. Martin,
S. Hofmann,
J. Robertson,
A. Centano,
A. Zurutuza
Abstract:
We report an optoelectronic mixer based on chemical vapour-deposited graphene. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially-available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical sign…
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We report an optoelectronic mixer based on chemical vapour-deposited graphene. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially-available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.
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Submitted 9 December, 2015; v1 submitted 9 November, 2015;
originally announced November 2015.
