Showing 1–19 of 19 results for author: Lee, J U

Observation of Half-Quantum Vorticity in an Iron-based Superconductor

Authors: Mohammad Javadi Balakan, Genda Gu, Qiang Li, Kenji Watanabe, Takashi Taniguchi, Ji Ung Lee

Abstract: Half-quantum vortices -- topological excitations carrying half the superconducting flux quantum -- are predicted to emerge in spin-triplet superconductors, where the spin component of order parameter enables fractional flux quantization. We present direct transport signatures of half-quantum vorticity in single-crystal Fe(Te,Se), an iron-based superconductor with helical Dirac surface states. Usin… ▽ More Half-quantum vortices -- topological excitations carrying half the superconducting flux quantum -- are predicted to emerge in spin-triplet superconductors, where the spin component of order parameter enables fractional flux quantization. We present direct transport signatures of half-quantum vorticity in single-crystal Fe(Te,Se), an iron-based superconductor with helical Dirac surface states. Using mesoscopic superconducting ring devices, we observe half-integer quantum oscillations arising from the splitting of quantized fluxoid states, further supported by distinct signatures of trapped half-integer fluxoids. The quantum oscillations are modulated by a background symmetry, set by the relative orientation of the DC bias current and perpendicular magnetic field, consistent with strong spin-orbit coupling. These findings demonstrate the long-sought half-quantum vorticity in spin-polarized superconductors and open new directions toward non-Abelian excitations in quantum materials and scalable topological qubits. △ Less

Submitted 2 May, 2025; originally announced May 2025.

Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-ideal p-n Diodes

Authors: Gideon Oyibo, Thomas Barrett, Sharadh Jois, Jeffrey L. Blackburn, Ji Ung Lee

Abstract: The measurement of the bandgap in quasi-one dimensional materials such as carbon nanotubes is challenging due to its dimensionality. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. Using these diodes, we measure the electronic bandgap and excitonic levels of different polymer-wrapped… ▽ More The measurement of the bandgap in quasi-one dimensional materials such as carbon nanotubes is challenging due to its dimensionality. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. Using these diodes, we measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55nm), (7,5) (0.83nm), and (6,5) (0.76nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs. △ Less

Submitted 12 December, 2022; originally announced December 2022.

Andreev Reflection and Klein Tunneling in High-Temperature Superconductor/Graphene Junctions

Authors: Sharadh Jois, Jose L. Lado, Genda Gu, Qiang Li., Ji Ung Lee

Abstract: Scattering processes in quantum materials emerge as resonances in electronic transport, including confined modes, Andreev states, and Yu-Shiba-Rusinov states. However, in most instances, these resonances are driven by a single scattering mechanism. Here we show the appearance of resonances due to the combination of two simultaneous scattering mechanisms, one from superconductivity and the other fr… ▽ More Scattering processes in quantum materials emerge as resonances in electronic transport, including confined modes, Andreev states, and Yu-Shiba-Rusinov states. However, in most instances, these resonances are driven by a single scattering mechanism. Here we show the appearance of resonances due to the combination of two simultaneous scattering mechanisms, one from superconductivity and the other from graphene p-n junctions. These resonances stem from Andreev reflection and Klein tunneling that occur at two different interfaces of a hole-doped region of graphene formed at the boundary with superconducting graphene due to proximity effects from Bi$_2$Sr$_2$Ca$_1$Cu$_2$O$_{8+δ}$. The resonances persist with gating the from p$^+$-p and p-n configurations. The suppression of the oscillation amplitude above the bias energy comparable to the induced superconducting gap indicates the contribution from Andreev reflection. Our experimental measurements are supported by quantum transport calculations in such interfaces, leading to analogous resonances. Our results put forward a hybrid scattering mechanism in graphene/high-temperature superconductor heterojunctions of potential impact for graphene-based Josephson junctions. △ Less

Submitted 30 March, 2023; v1 submitted 31 October, 2022; originally announced October 2022.

Comments: 6 pages, 4 figures, submitted

All-carbon nanotube solar cell devices mimic photosynthesis

Authors: Gideon Oyibo, Thomas Barrett, Sharadh Jois, Jeffrey Blackburn, Ji Ung Lee

Abstract: Photovoltaics has two main processes: Optical absorption and power conversion. In photosynthesis, the two equivalent processes are optical absorption and chemical conversion. Whereas in the latter, the two processes are carried out by distinct proteins, in conventional photovoltaic diodes, the two processes are convoluted because the optical and transport paths are the same, leading to inefficienc… ▽ More Photovoltaics has two main processes: Optical absorption and power conversion. In photosynthesis, the two equivalent processes are optical absorption and chemical conversion. Whereas in the latter, the two processes are carried out by distinct proteins, in conventional photovoltaic diodes, the two processes are convoluted because the optical and transport paths are the same, leading to inefficiencies. Here, we separate the site and direction of light absorption from those of power generation to show that semiconducting single-walled carbon nanotubes (s-SWCNTs) provide an artificial system that models photosynthesis in a tandem geometry. Using different s-SWCNT chiralities, we implement an energy funnel in dual-gated p-n diodes. This enables the capture of photons from multiple regions of the solar spectrum and the funneling of photogenerated excitons to the smallest bandgap s-SWCNT layer, where they become free carriers. As a result, we demonstrate an increase in the magnitude and spectral response of photocurrent by adding more s-SWCNT layers of different bandgaps without a corresponding deleterious increase in the dark leakage current. △ Less

Submitted 14 October, 2022; originally announced October 2022.

Geometric interference in a high-mobility graphene annulus p-n junction device

Authors: Son T. Le, Albert F. Rigosi, Joseph A. Hagmann, Christopher Gutierrez, Ji Ung Lee, Curt A. Richter

Abstract: The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Ahar… ▽ More The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Aharonov-Bohm oscillations, Fabry Perot interference at the junction, or moiré potentials. The device data are compared with those of another device fabricated with a traditional Hall bar geometry, as well as with quantum transport simulation data. Since the two devices are of different topological classes, the subtle differences observed in the corresponding measured data indicate that the most likely source of the observed geometric interference patterns is quantum scarring. △ Less

Submitted 29 December, 2021; originally announced December 2021.

Scalable Gate-Defined Majorana Fermions in 2D p-Wave Superconductors

Authors: Ji Ung Lee

Abstract: We provide a conceptual framework for developing a scalable topological quantum computer. It relies on forming Majorana fermions using circular electronic gates in two-dimensional p-wave superconductors. The gates allow the precise control of the number, position, and dynamics of Majorana fermions. Using an array of such gates, one can implement the full features of topological quantum computation… ▽ More We provide a conceptual framework for developing a scalable topological quantum computer. It relies on forming Majorana fermions using circular electronic gates in two-dimensional p-wave superconductors. The gates allow the precise control of the number, position, and dynamics of Majorana fermions. Using an array of such gates, one can implement the full features of topological quantum computation, including the braiding and fusion of Majoranas in space-time. The gates serve two purposes: They modulate the chemical potential locally to turn a topological superconductor into a normal conductor, and they are used to move the Majoranas in space-time. With a perpendicular magnetic field, the normal region localizes a quantum of magnetic flux. Under these conditions, the boundary between the normal region and the superconducting region supports a single zero-energy Majorana bound state. The localized zero mode is sufficiently separate from other states and can be dragged by sequentially applying voltages to the adjacent gates to implement quantum computation. We briefly describe the fabrication process to construct the device and determine key properties from experimentally determined parameters. The digital qualities of topological protection provide intrinsic immunity to the inevitable fabrication nonuniformities. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Strong equilibration of Landau levels edge-states at the graphene edge

Authors: Son T. Le, Joseph A. Hagmann, Nikolai Klimov, David Newell, Ji Ung Lee, Jun Yan, Curt A. Richter

Abstract: We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geometry allows the interactions between edge-states to be probed at both electrostatic edges defined by pn junctions and at the graphene physical edge. Me… ▽ More We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geometry allows the interactions between edge-states to be probed at both electrostatic edges defined by pn junctions and at the graphene physical edge. Measurements show that while the lowest LL edge-state is decoupled from the other LLs along the electrostatic junction, all the edge-states strongly equilibrate at the graphene physical edge despite the relatively short distance that they travel along the edge in our device. These findings are fundamental for the engineering of future high-performance graphene field-effect transistors based upon electron optics. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Direct Measurement of the Electron Beam Intensity Profile via Carbon Nanotube Tomography

Authors: Matthew Zotta, Sharadh Jois, Prathamesh Dhakras, Miguel Rodriguez, Ji Ung Lee

Abstract: Electron microscopes have been improved to achieve ever smaller beam spots, a key parameter that determines the instrument's resolution. The techniques to measure the size of the beam, however, have not progressed to the same degree. There is an on-going need to develop detection technologies that can potentially characterize the smallest electron beam to further improve the capabilities of these… ▽ More Electron microscopes have been improved to achieve ever smaller beam spots, a key parameter that determines the instrument's resolution. The techniques to measure the size of the beam, however, have not progressed to the same degree. There is an on-going need to develop detection technologies that can potentially characterize the smallest electron beam to further improve the capabilities of these instruments. We report on a new electron beam detector based on a single-walled carbon nanotube. Nanotubes are atomically smooth, have a well-defined diameter that is similar in size to the finest electron probes and can be used to directly measure the beam profile. By scanning the beam at different angles to the nanotube, we can accurately determine the spatial profile of an electron beam by applying tomographic reconstruction techniques. △ Less

Submitted 7 February, 2019; originally announced February 2019.

Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe$_2$ heterojunctions

Authors: Samuel W. LaGasse, Prathamesh Dhakras, Takashi Taniguchi, Kenji Watanabe, Ji Ung Lee

Abstract: Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report measurements on a boron nitride encapsulated graphene-tungsten diselenide (WSe$_2$) Schottky junction which exhibits ideal diode characteristics and a complete lack of… ▽ More Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report measurements on a boron nitride encapsulated graphene-tungsten diselenide (WSe$_2$) Schottky junction which exhibits ideal diode characteristics and a complete lack of Fermi-level pinning. The Schottky barrier height of the device is rigidly tuned by electrostatic gating of the WSe$_2$, enabling experimental verification of the Schottky-Mott limit in a single device. Utilizing this exceptional gate control, we realize a super-ideal gated-Schottky diode which surpasses the ideal diode limit. Our results provide a pathway for defect-free electrical contact to two-dimensional semiconductors and open up possibilities for circuits with efficient switching characteristics and higher efficiency optoelectronic devices. △ Less

Submitted 6 November, 2018; originally announced November 2018.

Atomic scale characterization of graphene p-n junctions for electron-optical applications

Authors: Xiaodong Zhou, Alexander Kerelsky, Mirza M. Elahi, Dennis Wang, K. M. Masum Habib, Redwan N. Sajjad, Pratik Agnihotri, Ji Ung Lee, Avik W. Ghosh, Frances M. Ross, Abhay N. Pasupathy

Abstract: Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the doping profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two… ▽ More Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the doping profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two state-of-the-art graphene p-n junction geometries at the atomic scale, one with CMOS polySi gates and another with naturally cleaved graphite gates. Using spectroscopic imaging, we characterize the local doping profile across and along the p-n junctions. We find that realistic junctions exhibit non-ideality both in their geometry as well as in the doping profile across the junction. We show that the geometry of the junction can be improved by using the cleaved edge of van der Waals metals such as graphite to define the junction. We quantify the geometric roughness and doping profiles of junctions experimentally and use these parameters in Nonequilibrium Green's Function based simulations of focusing and collimation in these realistic junctions. We find that for realizing Veselago focusing, it is crucial to minimize lateral interface roughness which only natural graphite gates achieve, and to reduce junction width, in which both devices under investigation underperform. We also find that carrier collimation is currently limited by the non-linearity of the doping profile across the junction. Our work provides benchmarks of the current graphene p-n junction quality and provides guidance for future improvements. △ Less

Submitted 4 October, 2018; originally announced October 2018.

Journal ref: ACS Nano, vol. 13, no. 2, pp. 2558, 2019

Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

Authors: Ramya Cuduvally, Prathamesh Dhakras, Phung Nguyen, Harold L. Hughes, Ji Ung Lee

Abstract: We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl. Phys. 76, 4879 (1994)) and includes transmission probability and the drain-channel coupling capacitor. The latter parameter gives rise to a theoretical RON that is… ▽ More We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl. Phys. 76, 4879 (1994)) and includes transmission probability and the drain-channel coupling capacitor. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices. △ Less

Submitted 30 August, 2018; v1 submitted 21 March, 2018; originally announced March 2018.

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene PN Networks

Authors: Ke Wang, Achim Harzheim, Ji Ung Lee, Takashi Taniguchi, Kenji Watanabe, Philip Kim

Abstract: Two dimensional electronic systems under strong magnetic field form quantum Hall (QH) edge states, which propagate along the boundary of a sample with a dissipationless current. Engineering the pathway of these propagating one-dimensional chiral modes enables the investigation of quantum tunneling between adjacent QH states. Here, we report tunneling transport in spatially controlled networks of Q… ▽ More Two dimensional electronic systems under strong magnetic field form quantum Hall (QH) edge states, which propagate along the boundary of a sample with a dissipationless current. Engineering the pathway of these propagating one-dimensional chiral modes enables the investigation of quantum tunneling between adjacent QH states. Here, we report tunneling transport in spatially controlled networks of QH edge states in bilayer graphene. We observe resonant tunneling between co-propagating QH edges across barriers formed by electrically defining incompressible strips. Employing spectroscopic tunneling measurements enable the direct probing of the spatial profile, density of states, and compressibility of the QH edge states with an unprecedented energy resolution. The capability to engineer the QH edge network provides an opportunity to build future quantum electronic devices supported by rich underline physics. △ Less

Submitted 8 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Lett. 122, 146801 (2019)

Understanding magnetic focusing in graphene $p$-$n$ junctions through quantum modeling

Authors: Samuel W LaGasse, Ji Ung Lee

Abstract: We present a quantum model which provides enhanced understanding of recent transverse magnetic focusing experiments on graphene $p$-$n$ junctions. Spatially resolved flow maps of local particle current density show quantum interference and $p$-$n$ junction filtering effects which are crucial to explaining the device operation. The Landauer-Büttiker formula is used alongside dephasing edge contacts… ▽ More We present a quantum model which provides enhanced understanding of recent transverse magnetic focusing experiments on graphene $p$-$n$ junctions. Spatially resolved flow maps of local particle current density show quantum interference and $p$-$n$ junction filtering effects which are crucial to explaining the device operation. The Landauer-Büttiker formula is used alongside dephasing edge contacts to give exceptional agreement between simulated non-local resistance and the recent experiment by Chen $\textit{et al}$ ($\textit{Science}$, 2016). The origin of positive and negative focusing resonances and off resonance characteristics are explained in terms of quantum transmission functions. Our model also captures subtle features from experiment, such as the previously unexplained $p$-$p^-$ to $p$-$p^+$ transition and the second $p$-$n$ focusing resonance. △ Less

Submitted 16 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 95, 155433 (2017)

Theory of Landau level mixing in heavily graded graphene p-n junctions

Authors: Samuel W LaGasse, Ji Ung Lee

Abstract: We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p-n junctions suppress mixing of $n \neq 0$ Landau levels. Our simulations spatially resolve… ▽ More We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p-n junctions suppress mixing of $n \neq 0$ Landau levels. Our simulations spatially resolve carrier transport in the device, for the first time, revealing separation of higher order Landau levels in strongly graded junctions, which suppresses mixing. △ Less

Submitted 2 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 165312 (2016)

Reverse degradation of nickel graphene junction by hydrogen annealing

Authors: Zhenjun Zhang, Fan Yang, Pratik Agnihotri, Ji Ung Lee, Jim R. Lloyd

Abstract: Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen an… ▽ More Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C) is an effective technique to reverse the degradation. △ Less

Submitted 26 January, 2016; v1 submitted 1 January, 2016; originally announced January 2016.

Characterization of Magnetic Ni Clusters on Graphene Scaffold after High Vacuum Annealing

Authors: Zhenjun Zhang, Akitomo Matsubayashi, Benjamin Grisafe, Ji Ung Lee, James R. Lloyd

Abstract: Magnetic Ni nanoclusters were synthesized by electron beam deposition utilizing CVD graphene as a scaffold. The subsequent clusters were subjected to high vacuum (5-8 x10-7 torr) annealing between 300 and 600 0C. The chemical stability, optical and morphological changes were characterized by X-ray photoemission microscopy, Raman spectroscopy, atomic force microscopy and magnetic measurement. Under… ▽ More Magnetic Ni nanoclusters were synthesized by electron beam deposition utilizing CVD graphene as a scaffold. The subsequent clusters were subjected to high vacuum (5-8 x10-7 torr) annealing between 300 and 600 0C. The chemical stability, optical and morphological changes were characterized by X-ray photoemission microscopy, Raman spectroscopy, atomic force microscopy and magnetic measurement. Under ambient exposure, nickel nanoparticles was observed to be oxidized quickly, forming antiferromagnetic nickel oxide. Here, we report that the majority of the oxidized nickel is in non-stoichiometric form and can be reduced under high vacuum at temperature as low as 300 0C. Importantly, the resulting annealed clusters are relatively stable and no further oxidation was detectable after three weeks of air exposure at room temperature. △ Less

Submitted 10 November, 2015; originally announced November 2015.

Comments: 19 pages,5 figures

Ideal Graphene/Silicon Schottky Junction Diodes

Authors: Dhiraj Sinha, Ji Ung Lee

Abstract: The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new tran… ▽ More The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new transport model is needed to describe the graphene-silicon Schottky junction. While the current-voltage behavior follows the celebrated ideal diode behavior, the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottky junction. △ Less

Submitted 15 May, 2014; originally announced May 2014.

Comments: 13 pages, 4 figures

Reconfigurable p-n Junction Diodes and the Photovoltaic Effect in Exfoliated MoS2 Films

Authors: Surajit Sutar, Pratik Agnihotri, Everett Comfort, T. Taniguchi, K. Watanabe, Ji Ung Lee

Abstract: Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to th… ▽ More Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS2 flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4kBT is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction. △ Less

Submitted 21 March, 2014; v1 submitted 22 January, 2014; originally announced January 2014.

Comments: 4 figures

Journal ref: Appl. Phys. Lett., 104, 122104 (2014)

Manifestation of chiral tunneling at a tilted graphene pn junction

Authors: Redwan N. Sajjad, S. Sutar, J. U. Lee, Avik W. Ghosh

Abstract: Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and culminating in unit transmission at normal incidence (Klein tunneling). We theoretically show that such chiral tunneling can be directly observed from the junct… ▽ More Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and culminating in unit transmission at normal incidence (Klein tunneling). We theoretically show that such chiral tunneling can be directly observed from the junction resistance of a tilted interface probed with separate split gates. The junction resistance is shown to increase with tilt in agreement with recent experimental evidence. The tilt dependence arises because of the misalignment between modal density and the anisotropic transmission lobe oriented perpendicular to the tilt. A critical determinant is the presence of edge scattering events that can completely reverse the angle-dependence. The absence of such reversals in the experiments indicates that these edge effects are not overwhelmingly deleterious, making the premise of transport governed by electron `optics' in graphene an exciting possibility. △ Less

Submitted 27 July, 2012; originally announced July 2012.

Journal ref: Physical Review B, vol. 86, 155412 (2012)