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Direct Joule-Heated Non-Equilibrium Synthesis Enables High Performing Thermoelectrics
Authors:
Chenguang Zhang,
Jose Recatala-Gomez,
Zainul Aabdin,
Yi Jiang,
Luyang Jiang,
Sze Yu Tan,
Hong Liu,
Yuting Qian,
Coryl Jing Jun Lee,
Sabrine Hachmioune,
Vaishali Taneja,
Anqi Sng,
Pawan Kumar,
Haiwen Dai,
Zhiqian Lin,
Weng Weei Tjiu,
Fengxia Wei,
Qianhong She,
D. V. Maheswar Repaka,
David Scanlon,
Kanishka Biswas,
Yee Kan Koh,
Kedar Hippalgaonkar
Abstract:
High-throughput synthesis of bulk inorganic materials is crucial for accelerating functional materials discovery but is hindered by slow, energy-intensive solid-state methods. We introduce Direct Joule-Heated Synthesis (DJS), a rapid, single-step and scalable solid-state synthesis technique achieving a $10^5$-fold speedup and 20,000x energy efficiency improvement over conventional synthesis. DJS e…
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High-throughput synthesis of bulk inorganic materials is crucial for accelerating functional materials discovery but is hindered by slow, energy-intensive solid-state methods. We introduce Direct Joule-Heated Synthesis (DJS), a rapid, single-step and scalable solid-state synthesis technique achieving a $10^5$-fold speedup and 20,000x energy efficiency improvement over conventional synthesis. DJS enables the synthesis of dense, bulk chalcogenides ($\mathrm{Bi_{0.5}Sb_{1.5}Te_3}$, $\mathrm{AgSbTe_2}$), achieving a zT of 2.3 at 573 K in optimally Cd/Se co-doped $\mathrm{AgSbTe_2}$, one of the highest for polycrystalline materials at this temperature. DJS enables optimal co-doping and rapid, non-equilibrium solidification, producing lamellar microstructures, interfacial regions, and cation-ordered nanodomains that scatter all-scale phonons, achieving ultralow lattice thermal conductivity (~0.2 $W m^{-1} K^{-1}$ at 573 K). DJS establishes a new benchmark for scalable and fast synthesis, accelerating functional material discovery.
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Submitted 4 June, 2025;
originally announced June 2025.
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Mapping micron-scale wetting properties of superhydrophobic surfaces
Authors:
Dan Daniel,
Chee Leng Lay,
Anqi Sng,
Corryl Jing Jun Lee,
Darren Chi Jin Neo,
Xing Yi Ling,
Nikodem Tomczak
Abstract:
There is a huge interest in developing super-repellent surfaces for anti-fouling and heat transfer applications. To characterize the wetting properties of such surfaces, the most common approach is to place a millimetric-sized droplet and measure its contact angles. The adhesion and friction forces can then be indirectly inferred from the Furmidge's relation. While easy to implement, contact angle…
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There is a huge interest in developing super-repellent surfaces for anti-fouling and heat transfer applications. To characterize the wetting properties of such surfaces, the most common approach is to place a millimetric-sized droplet and measure its contact angles. The adhesion and friction forces can then be indirectly inferred from the Furmidge's relation. While easy to implement, contact angle measurements are semi-quantitative and cannot resolve wetting variations on a surface. Here, we attach a micrometric-sized droplet to an Atomic Force Microscope cantilever to directly measure adhesion and friction forces with nanonewton force resolutions. We spatially map the micron-scale wetting properties of superhydrophobic surfaces and observe the time-resolved pinning-depinning dynamics as a droplet detaches from or moves across the surface.
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Submitted 9 September, 2019;
originally announced September 2019.
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High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
Authors:
Dongjea Seo,
Dong Yun Lee,
Junyoung Kwon,
Jea Jung Lee,
Takashi Taniguchi,
Kenji Watanabe,
Gwan-Hyoung Lee,
Keun Soo Kim,
James Hone,
Young Duck Kim,
Heon-Jin Choi
Abstract:
A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, int…
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A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact behaviors are observed only at very high gate voltages and carrier concentrations (~1013 cm-2). Here, we present high-performance monolayer MoS2 FETs with Ohmic contact at a modest gate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphene with a high intrinsic electron carrier density. The CVD nitrogen-doped graphene and monolayer MoS2 hybrid FETs platform exhibited a large negative shifted threshold voltage of -54.2 V and barrier-free Ohmic contact under zero gate voltage. Transparent contact by nitrogen-doped graphene led to a 214% enhancement in the on-current and a four-fold improvement in the field-effect carrier mobility of monolayer MoS2 FETs compared with those of a pristine graphene electrode platform. The transport measurements, as well as Raman and X-ray photoelectron spectroscopy analyses before and after thermal annealing, reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene is responsible for the dominant effects of electron doping. Large-scale nitrogen-doped graphene electrodes provide a promising device platform for the development of high-performance devices and the study of unique quantum behaviors.
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Submitted 18 July, 2019;
originally announced July 2019.
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Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film
Authors:
W. Li,
M. Claassen,
Cui-Zu Chang,
B. Moritz,
T. Jia,
C. Zhang,
S. Rebec,
J. J. Lee,
M. Hashimoto,
D. -H. Lu,
R. G. Moore,
J. S. Moodera,
T. P. Devereaux,
Z. -X. Shen
Abstract:
The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we…
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The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.
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Submitted 9 September, 2016;
originally announced September 2016.
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Superconducting gap anisotropy in monolayer FeSe thin film
Authors:
Y. Zhang,
J. J. Lee,
R. G. Moore,
W. Li,
M. Yi,
M. Hashimoto,
D. H. Lu,
T. P. Devereaux,
D. -H. Lee,
Z. -X. Shen
Abstract:
Fermi surface topology and pairing symmetry are two pivotal characteristics of a superconductor. Superconductivity in one monolayer (1ML) FeSe thin film has attracted great interest recently due to its intriguing interfacial properties and possibly high superconducting transition temperature (Tc) over 77 K. Here, we report high-resolution measurements of the Fermi surface and superconducting gaps…
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Fermi surface topology and pairing symmetry are two pivotal characteristics of a superconductor. Superconductivity in one monolayer (1ML) FeSe thin film has attracted great interest recently due to its intriguing interfacial properties and possibly high superconducting transition temperature (Tc) over 77 K. Here, we report high-resolution measurements of the Fermi surface and superconducting gaps in 1ML FeSe using angle-resolved photoemission spectroscopy (ARPES). Two ellipse-like electron pockets are clearly resolved overlapping with each other at the Brillouin zone corner. The superconducting gap is nodeless but moderately anisotropic, which put strong constraints on determining the pairing symmetry. The gap maxima locate along the major axis of ellipse, which cannot be explained by a single d-wave, extended s-wave, or s$\pm$ gap function. Four gap minima are observed at the intersection of electron pockets suggesting the existence of either a sign change or orbital-dependent pairing in 1ML FeSe.
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Submitted 20 December, 2015;
originally announced December 2015.
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Electronically driven nematicity in FeSe Films on SrTiO3
Authors:
W. Li,
Y. Zhang,
J. J. Lee,
H. Ding,
M. Yi,
Z. Li,
P. Deng,
K. Chang,
S. -K. Mo,
M. Hashimoto,
D. H. Lu,
X. Chen,
R. G. Moore,
Q. -K. Xue,
Z. -X. Shen
Abstract:
The intriguing role of nematicity in iron-based superconductors, defined as broken rotational symmetry below a characteristic temperature, is an intensely investigated contemporary subject. Nematicity is closely connected to the structural transition, however, it is highly doubtful that the lattice degree of freedom is responsible for its formation, given the accumulating evidence for the observed…
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The intriguing role of nematicity in iron-based superconductors, defined as broken rotational symmetry below a characteristic temperature, is an intensely investigated contemporary subject. Nematicity is closely connected to the structural transition, however, it is highly doubtful that the lattice degree of freedom is responsible for its formation, given the accumulating evidence for the observed large anisotropy. Here we combine molecular beam epitaxy, angle-resolved photoemission spectroscopy and scanning tunneling microscopy together to study the nematicity in multilayer FeSe films on SrTiO3. Our results demonstrate direct connection between electronic anisotropy in momentum space and standing waves in real space at atomic scale. The lifting of orbital degeneracy of dxz/dyz bands gives rise to a pair of Dirac cone structures near the zone corner, which causes energy-independent unidirectional interference fringes, observed in real space as standing waves by scattering electrons off C2 domain walls and Se-defects. On the other hand, the formation of C2 nematic domain walls unexpectedly shows no correlation with lattice strain pattern, which is induced by the lattice mismatch between the film and substrate. Our results establish a clean case that the nematicity is driven by electronic rather than lattice degrees of freedom in FeSe films.
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Submitted 29 April, 2017; v1 submitted 6 September, 2015;
originally announced September 2015.
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Thickness-Dependent Coherent Phonon Frequency in Ultrathin FeSe/SrTiO$_{3}$ Films
Authors:
Shuolong Yang,
Jonathan A. Sobota,
Dominik Leuenberger,
Alexander F. Kemper,
James J. Lee,
Felix T. Schmitt,
Wei Li,
Rob G. Moore,
Patrick S. Kirchmann,
Zhi-Xun Shen
Abstract:
Ultrathin FeSe films grown on SrTiO$_{3}$ substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. Using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO$_{3}$ films grown by molecular beam epitaxy. After optical excitation…
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Ultrathin FeSe films grown on SrTiO$_{3}$ substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. Using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO$_{3}$ films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump-probe delay for 1 unit cell, 3 unit cell, and 60 unit cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00(2) to 5.25(2) THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A$_\textrm{1g}$ phonon. The dominant mechanism for the phonon softening in 1 unit cell thick FeSe films is a substrate-induced lattice strain. Our results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.
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Submitted 4 June, 2015;
originally announced June 2015.
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Distinctive momentum dependence of the band reconstruction in the nematic state of FeSe thin film
Authors:
Y. Zhang,
M. Yi,
Z. -K. Liu,
W. Li,
J. J. Lee,
R. G. Moore,
M. Hashimoto,
N. Masamichi,
H. Eisaki,
S. -K. Mo,
Z. Hussain,
T. P. Devereaux,
Z. -X. Shen,
D. H. Lu
Abstract:
Nematic state, where the system is translationally invariant but breaks the rotational symmetry, has drawn great attentions recently due to experimental observations of such a state in both cuprates and iron-based superconductors. The mechanism of nematicity that is likely tied to the pairing mechanism of high-Tc, however, still remains controversial. Here, we studied the electronic structure of m…
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Nematic state, where the system is translationally invariant but breaks the rotational symmetry, has drawn great attentions recently due to experimental observations of such a state in both cuprates and iron-based superconductors. The mechanism of nematicity that is likely tied to the pairing mechanism of high-Tc, however, still remains controversial. Here, we studied the electronic structure of multilayer FeSe film by angle-resolved photoemission spectroscopy (ARPES). We found that the FeSe film enters the nematic state around 125 K, while the electronic signature of long range magnetic order has not been observed down to 20K indicating the non-magnetic origin of the nematicity. The band reconstruction in the nematic state is characterized by the splitting of the dxz and dyz bands. More intriguingly, such energy splitting is strong momentum dependent with the largest band splitting of ~80meV at the zone corner. The simple on-site ferro-orbital ordering is insufficient to reproduce the nontrivial momentum dependence of the band reconstruction. Instead, our results suggest that the nearest-neighbor hopping of dxz and dyz is highly anisotropic in the nematic state, the origin of which holds the key in understanding the nematicity in iron-based superconductors.
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Submitted 5 March, 2015;
originally announced March 2015.
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Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements
Authors:
D. Kamburov,
M. A. Mueed,
I. Jo,
Yang Liu,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
J. J. D. Lee
Abstract:
We report ballistic transport commensurability minima in the magnetoresistance of $ν=3/2$ composite fermions (CFs). The CFs are formed in high-quality two-dimensional electron systems confined to wide GaAs quantum wells and subjected to an in-plane, unidirectional periodic potential modulation. We observe a slight asymmetry of the CF commensurability positions with respect to $ν=3/2$, which we exp…
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We report ballistic transport commensurability minima in the magnetoresistance of $ν=3/2$ composite fermions (CFs). The CFs are formed in high-quality two-dimensional electron systems confined to wide GaAs quantum wells and subjected to an in-plane, unidirectional periodic potential modulation. We observe a slight asymmetry of the CF commensurability positions with respect to $ν=3/2$, which we explain quantitatively by comparing three CF density models and concluding that the $ν=3/2$ CFs are likely formed by the minority carriers in the upper energy spin state of the lowest Landau level. Our data also allow us to probe the shape and size of the CF Fermi contour. At a fixed electron density of $\simeq 1.8 \times 10^{11}$ cm$^{-2}$, as the quantum well width increases from 30 to 60 nm, the CFs show increasing spin-polarization. We attribute this to the enhancement of the Zeeman energy relative to the Coulomb energy in wider wells where the latter is softened because of the larger electron layer thickness. The application of an additional parallel magnetic field ($B_{||}$) leads to a significant distortion of the CF Fermi contour as $B_{||}$ couples to the CFs' out-of-plane orbital motion. The distortion is much more severe compared to the $ν=1/2$ CF case at comparable $B_{||}$. Moreover, the applied $B_{||}$ further spin-polarizes the $ν=3/2$ CFs as deduced from the positions of the commensurability minima.
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Submitted 11 November, 2014;
originally announced November 2014.
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Charge-orbital-lattice coupling effects in the dd-excitation profile of one dimensional cuprates
Authors:
J. J. Lee,
B. Moritz,
W. S. Lee,
M. Yi,
C. J. Jia,
A. P. Sorini,
K. Kudo,
Y. Koike,
K. J. Zhou,
C. Monney,
V. Strocov,
L. Patthey,
T. Schmitt,
T. P. Devereaux,
Z. X. Shen
Abstract:
We identify dd-excitations in the quasi-one dimensional compound Ca$_2$Y$_2$Cu$_5$O$_{10}$ using resonant inelastic x-ray scattering. By tuning across the Cu L$_3$-edge, we observe abrupt shifts in the dd-peak positions as a function of incident photon energy. This observation demonstrates orbital-specific coupling of the high-energy excited states of the system to the low-energy degrees of freedo…
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We identify dd-excitations in the quasi-one dimensional compound Ca$_2$Y$_2$Cu$_5$O$_{10}$ using resonant inelastic x-ray scattering. By tuning across the Cu L$_3$-edge, we observe abrupt shifts in the dd-peak positions as a function of incident photon energy. This observation demonstrates orbital-specific coupling of the high-energy excited states of the system to the low-energy degrees of freedom. A Franck-Condon treatment of electron-lattice coupling, consistent with other measurements in this compound, reproduces these shifts, explains the Gaussian lineshapes, and highlights charge-orbital-lattice renormalization in the high energy d-manifold.
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Submitted 9 December, 2013;
originally announced December 2013.
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Interfacial mode coupling as the origin of the enhancement of Tc in FeSe films on SrTiO3
Authors:
J. J. Lee,
F. T. Schmitt,
R. G. Moore,
S. Johnston,
Y. -T. Cui,
W. Li,
M. Yi,
Z. K. Liu,
M. Hashimoto,
Y. Zhang,
D. H. Lu,
T. P. Devereaux,
D. -H. Lee,
Z. -X. Shen
Abstract:
Single unit cell films of iron selenide (1UC FeSe) grown on SrTiO3 (STO) substrates have recently shown superconducting energy gaps opening at temperatures close to the boiling point of liquid nitrogen (77 K), a record for iron-based superconductors. Towards understanding why Cooper pairs form at such high temperatures, a primary question to address is the role, if any, of the STO substrate. Here,…
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Single unit cell films of iron selenide (1UC FeSe) grown on SrTiO3 (STO) substrates have recently shown superconducting energy gaps opening at temperatures close to the boiling point of liquid nitrogen (77 K), a record for iron-based superconductors. Towards understanding why Cooper pairs form at such high temperatures, a primary question to address is the role, if any, of the STO substrate. Here, we report high resolution angle resolved photoemission spectroscopy (ARPES) results which reveal an unexpected and unique characteristic of the 1UC FeSe/STO system: shake-off bands suggesting the presence of bosonic modes, most likely oxygen optical phonons in STO, which couple to the FeSe electrons with only small momentum transfer. Such coupling has the unusual benefit of helping superconductivity in most channels, including those mediated by spin fluctuations. Our calculations suggest such coupling is responsible for raising the superconducting gap opening temperature in 1UC FeSe/STO. This discovery suggests a pathway to engineer high temperature superconductors.
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Submitted 11 May, 2015; v1 submitted 9 December, 2013;
originally announced December 2013.
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Direct Optical Coupling to an Unoccupied Dirac Surface State in the Topological Insulator Bi$_2$Se$_3$
Authors:
Jonathan A. Sobota,
Shuolong Yang,
Alexander F. Kemper,
J. J. Lee,
Felix T. Schmitt,
Wei Li,
Robert G. Moore,
James G. Analytis,
Ian R. Fisher,
Patrick S. Kirchmann,
Thomas P. Devereaux,
Zhi-Xun Shen
Abstract:
We characterize the occupied and unoccupied electronic structure of the topological insulator Bi$_2$Se$_3$ by one-photon and two-photon angle-resolved photoemission spectroscopy and slab band structure calculations. We reveal a second, unoccupied Dirac surface state with similar electronic structure and physical origin to the well-known topological surface state. This state is energetically locate…
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We characterize the occupied and unoccupied electronic structure of the topological insulator Bi$_2$Se$_3$ by one-photon and two-photon angle-resolved photoemission spectroscopy and slab band structure calculations. We reveal a second, unoccupied Dirac surface state with similar electronic structure and physical origin to the well-known topological surface state. This state is energetically located 1.5 eV above the conduction band, which permits it to be directly excited by the output of a Ti:Sapphire laser. This discovery demonstrates the feasibility of direct ultrafast optical coupling to a topologically protected, spin-textured surface state.
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Submitted 5 September, 2013;
originally announced September 2013.
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Asymmetry of collective excitations in electron and hole doped cuprate superconductors
Authors:
W. S. Lee,
J. J. Lee,
E. A. Nowadnick,
W. Tabis,
S. W. Huang,
V. N. Strocov,
E. M. Motoyama,
G. Yu,
B. Moritz,
M. Greven,
T. Schmitt,
Z. X. Shen,
T. P. Devereaux
Abstract:
High-temperature superconductivity (HTSC) mysteriously emerges upon doping holes or electrons into insulating copper oxides with antiferromagnetic (AFM) order. It has been thought that the large energy scale of magnetic excitations, compared to phonon energies for example, lies at the heart of an electronically-driven superconducting phase at high temperatures. However, despite extensive studies,…
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High-temperature superconductivity (HTSC) mysteriously emerges upon doping holes or electrons into insulating copper oxides with antiferromagnetic (AFM) order. It has been thought that the large energy scale of magnetic excitations, compared to phonon energies for example, lies at the heart of an electronically-driven superconducting phase at high temperatures. However, despite extensive studies, little information is available for comparison of high-energy magnetic excitations of hole- and electron-doped superconductors to assess a possible correlation with the respective superconducting transition temperatures. Here, we use resonant inelastic x-ray scattering (RIXS) at the Cu L3-edge to reveal high-energy collective excitations in the archetype electron-doped cuprate Nd2-xCexCuO4 (NCCO). Surprisingly, despite the fact that the spin stiffness is zero and the AFM correlations are short-ranged, magnetic excitations harden significantly across the AFM-HTSC phase boundary, in stark contrast with the hole-doped cuprates. Furthermore, we find an unexpected and highly dispersive mode in superconducting NCCO that is undetected in the hole-doped compounds, which emanates from the zone center with a characteristic energy comparable to the pseudogap, and may signal a quantum phase distinct from superconductivity. The uncovered asymmetry in the high-energy collective excitations with respect to hole and electron doping provides additional constraints for modeling the HTSC cuprates.
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Submitted 19 June, 2014; v1 submitted 21 August, 2013;
originally announced August 2013.
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Fermi Contour Anisotropy of GaAs Electron-Flux Composite Fermions in Parallel Magnetic Fields
Authors:
D. Kamburov,
M. A. Mueed,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
J. J. D. Lee,
R. Winkler
Abstract:
In high-quality two-dimensional electrons confined to GaAs quantum wells, near Landau level filling factors $ν=$ 1/2 and 1/4, we observe signatures of the commensurability of the electron-flux composite fermion cyclotron orbits with a unidirectional periodic density modulation. Focusing on the data near $ν=1/2$, we directly and quantitatively probe the shape of the composite fermions' cyclotron or…
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In high-quality two-dimensional electrons confined to GaAs quantum wells, near Landau level filling factors $ν=$ 1/2 and 1/4, we observe signatures of the commensurability of the electron-flux composite fermion cyclotron orbits with a unidirectional periodic density modulation. Focusing on the data near $ν=1/2$, we directly and quantitatively probe the shape of the composite fermions' cyclotron orbit, and therefore their Fermi contour, as a function of magnetic field ($B_{||}$) applied parallel to the sample plane. The composite fermion Fermi contour becomes severely distorted with increasing $B_{||}$ and appears to be elliptical, in sharp contrast to the electron Fermi contour which splits as the system becomes bilayer-like at high $B_{||}$. We present a simple, qualitative model to interpret our findings.
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Submitted 7 August, 2013;
originally announced August 2013.
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Anisotropic Fermi Contour of (001) GaAs Electrons in Parallel Magnetic Fields
Authors:
D. Kamburov,
M. A. Mueed,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
J. J. D. Lee,
R. Winkler
Abstract:
We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contour…
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We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semi-quantitatively with the results of parameter-free calculations of the Fermi contours but there are significant discrepancies.
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Submitted 7 August, 2013; v1 submitted 14 June, 2013;
originally announced June 2013.
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Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy
Authors:
J. J. Lee,
F. T. Schmitt,
R. G. Moore,
I. M. Vishik,
Y. Ma,
Z. X. Shen
Abstract:
We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band for ultrathin samples, our samples remain intrinsic bulk insulators. We characterize these films using in-situ angle resolved photoemission spectroscopy (ARPES),…
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We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band for ultrathin samples, our samples remain intrinsic bulk insulators. We characterize these films using in-situ angle resolved photoemission spectroscopy (ARPES), which is a direct probe of bandstructure, and ex-situ atomic force microscopy. We find that the conduction band lies above the Fermi energy, indicating bulk insulating behavior with only the surface states crossing EF . We conclude that thermal cracking of Te and Se in our growth leads to higher quality thin films, paving the way for future improvements in growth of topological insulators.
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Submitted 18 May, 2012;
originally announced May 2012.
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Room-Temperature Charge Stability Modulated by Quantum Effects in a Nanoscale Silicon Island
Authors:
S. J. Shin,
J. J. Lee,
H. J. Kang,
J. B. Choi,
S. -R. Eric Yang,
Y. Takahashi,
D. G. Hasko
Abstract:
We report on transport measurement performed on a room-temperature-operating ultra-small Coulomb blockade devices with a silicon island of sub-5nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This…
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We report on transport measurement performed on a room-temperature-operating ultra-small Coulomb blockade devices with a silicon island of sub-5nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub-5nm ultra-small scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.
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Submitted 18 January, 2012;
originally announced January 2012.
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Complexity in human transportation networks: A comparative analysis of worldwide air transportation and global cargo ship movements
Authors:
Grastivia O'Danleyman,
Jake Jungbin Lee,
Hanno Seebens,
Bernd Blasius,
Dirk Brockmann
Abstract:
We present a comparative network theoretic analysis of the two largest global transportation networks: The worldwide air-transportation network (WAN) and the global cargoship network (GCSN). We show that both networks exhibit striking statistical similarities despite significant differences in topology and connectivity. Both networks exhibit a discontinuity in node and link betweenness distributio…
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We present a comparative network theoretic analysis of the two largest global transportation networks: The worldwide air-transportation network (WAN) and the global cargoship network (GCSN). We show that both networks exhibit striking statistical similarities despite significant differences in topology and connectivity. Both networks exhibit a discontinuity in node and link betweenness distributions which implies that these networks naturally segragate in two different classes of nodes and links. We introduce a technique based on effective distances, shortest paths and shortest-path trees for strongly weighted symmetric networks and show that in a shortest-path-tree representation the most significant features of both networks can be readily seen. We show that effective shortest-path distance, unlike conventional geographic distance measures, strongly correlates with node centrality measures. Using the new technique we show that network resilience can be investigated more precisely than with contemporary techniques that are based on percolation theory. We extract a functional relationship between node characteristics and resilience to network disruption. Finally we discuss the results, their implications and conclude that dynamic processes that evolve on both networks are expected to share universal dynamic characteristics.
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Submitted 28 March, 2011;
originally announced March 2011.
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Enhanced Quantum Effects in an Ultra-Small Coulomb Blockaded Device Operating at Room-Temperature
Authors:
S. J. Shin,
C. S. Jeong,
B. J. Park,
T. K. Yoon,
J. J. Lee,
S. J. Kim,
J. B. Choi,
Y. Takahashi,
D. G. Hasko
Abstract:
An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated using relatively large devices at ultra-low temperatures, where they give rise to a fine additional structure on the Coulomb oscillations [2-13]. Here, we re…
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An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated using relatively large devices at ultra-low temperatures, where they give rise to a fine additional structure on the Coulomb oscillations [2-13]. Here, we report transport measurements carried out on a sub-2nm single-electron device; this size is sufficiently small that Coulomb blockade, and other quantum effects, persist up to room temperature (RT). These devices were made by scaling the size of a FinFET structure down to an ultimate limiting form, resulting in the reliable formation of a sub-2nm silicon Coulomb island. Four clear Coulomb diamonds can be observed at RT and the 2nd Coulomb diamond is unusually large, due to quantum confinement. The observed characteristics are successfully modeled on the basis of a very low electron number on the island, combined with Pauli spin exclusion. These effects offer additional functionality for future RT-operating single-electron device applications
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Submitted 21 January, 2010;
originally announced January 2010.
