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On-Stack Two-Dimensional Conversion of MoS2 into MoO3
Authors:
Taeg Yeoung Ko,
Areum Jeong,
Wontaek Kim,
Jinhwan Lee,
Youngchan Kim,
Jung Eun Lee,
Gyeong Hee Ryu,
Kwanghee Park,
Dogyeong Kim,
Zonghoon Lee,
Min Hyung Lee,
Changgu Lee,
Sunmin Ryu
Abstract:
Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D 'on-stack' chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbat…
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Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D 'on-stack' chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks.
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Submitted 10 August, 2020;
originally announced August 2020.
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Prediction of Band Structure of $Bi_2Te_3$-related Binary and Ternary Thermoelectric Materials
Authors:
Byungki Ryu,
Min-Wook Oh,
Bong-Seo Kim,
Ji Eun Lee,
Sung-Jae Joo,
Bok-Ki Min,
HeeWoong Lee,
Sudong Park
Abstract:
Density functional calculations have performed to study the band structures of $Bi_2Te_3$-related binary ($Bi_2Te_3$, $Sb_2Te_3$, $Bi_2Se_3$, and $Sb_2Se_3$) and $Sb$/$Se$ doped ternary compounds [$(Bi_{1-x}Sb_x)_2Te_3$ and $Bi_2(Te_{1-y}Se_y)_3$]. It is found that the band gap can be increased by $Sb$ doping and it is monotonically increased by $Se$ doping. In ternary compounds, the change of the…
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Density functional calculations have performed to study the band structures of $Bi_2Te_3$-related binary ($Bi_2Te_3$, $Sb_2Te_3$, $Bi_2Se_3$, and $Sb_2Se_3$) and $Sb$/$Se$ doped ternary compounds [$(Bi_{1-x}Sb_x)_2Te_3$ and $Bi_2(Te_{1-y}Se_y)_3$]. It is found that the band gap can be increased by $Sb$ doping and it is monotonically increased by $Se$ doping. In ternary compounds, the change of the conduction band structure is more significant, as compared to the change of valence band. The band degeneracy of valence band maximum is maintained to be 6 in binaries and ternaries. However, as going from $Bi_2Te_3$ to $Sb_2Te_3$ ($Bi_2Se_3$), the degeneracy of conduction band minimum is reduced from 6 to 2(1). Based on the results of band structures, we suggest the suitable stoichiometries of ternary compounds for high thermoelectric performance.
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Submitted 14 November, 2016; v1 submitted 4 June, 2015;
originally announced June 2015.
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Defects responsible for abnormal n-type conductivity in Ag-excess doped PbTe thermoelectrics
Authors:
Byungki Ryu,
Min-Wook Oh,
Jae Ki Lee,
Ji Eun Lee,
Sung-Jae Joo,
Bong-Seo Kim,
Bog-Ki Min,
Hee-Woong Lee,
Su-Dong Park
Abstract:
We find that Ag-interstitial ($Ag_I$) acts as an electron donor and plays an important role in Ag-excess doped polycrystalline PbTe thermoelectric materials. When Ag is heavily doped in PbTe, the neutral (Ag-Ag) dimer defect is formed at the Pb-site and the environment becomes Pb-rich/Te-poor condition. Then the positively ionized Ag interstitial ($Ag_I^+$) defect becomes the major defect under Pb…
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We find that Ag-interstitial ($Ag_I$) acts as an electron donor and plays an important role in Ag-excess doped polycrystalline PbTe thermoelectric materials. When Ag is heavily doped in PbTe, the neutral (Ag-Ag) dimer defect is formed at the Pb-site and the environment becomes Pb-rich/Te-poor condition. Then the positively ionized Ag interstitial ($Ag_I^+$) defect becomes the major defect under Pb-rich condition. Due to the small formation energy and small diffusion barrier of $Ag_I^+$, Ag can be easily dissolved into the PbTe matrix. The temperature behavior of the Ag defect formation energy well explains the $Ag_I^+$ solubility, the electron carrier generation, and the increasing electrical conductivity in Ag-excess doped polycrystalline PbTe at high temperature. This abnormal doping behavior by forming interstitial defects is also found for Au-doped PbTe.
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Submitted 4 June, 2015;
originally announced June 2015.
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Optical Separation of Mechanical Strain from Charge Doping in Graphene
Authors:
Ji Eun Lee,
Gwanghyun Ahn,
Jihye Shim,
Young Sik Lee,
Sunmin Ryu
Abstract:
Graphene, due to its superior stretchability, exhibits rich structural deformation behaviors and its strain-engineering has proven useful in modifying its electronic and magnetic properties. Despite the strain-sensitivity of the Raman G and 2D modes, the optical characterization of the native strain in graphene on silica substrates has been hampered by excess charges interfering with both modes. H…
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Graphene, due to its superior stretchability, exhibits rich structural deformation behaviors and its strain-engineering has proven useful in modifying its electronic and magnetic properties. Despite the strain-sensitivity of the Raman G and 2D modes, the optical characterization of the native strain in graphene on silica substrates has been hampered by excess charges interfering with both modes. Here we show that the effects of strain and charges can be optically separated from each other by correlation analysis of the two modes, enabling simple quantification of both. Graphene with in-plane strain randomly occurring between -0.2% and 0.4% undergoes modest compression (-0.3%) and significant hole doping upon thermal treatments. This study suggests that substrate-mediated mechanical strain is a ubiquitous phenomenon in two-dimensional materials. The proposed analysis will be of great use in characterizing graphene-based materials and devices.
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Submitted 2 September, 2012;
originally announced September 2012.
