Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs
Authors:
Yiwen Song,
Arkka Bhattacharyya,
Anwarul Karim,
Daniel Shoemaker,
Hsien-Lien Huang,
Saurav Roy,
Craig McGray,
Jacob H. Leach,
Jinwoo Hwang,
Sriram Krishnamoorthy,
Sukwon Choi
Abstract:
Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O…
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Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $μ$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches.
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Submitted 21 February, 2023; v1 submitted 13 October, 2022;
originally announced October 2022.
Optical and structural properties of Si doped $β$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy
Authors:
Bahadir Kucukgok,
David J. Mandia,
Jacob H. Leach,
Keith R. Evans,
Jeffrey A. Eastman,
Hua Zhou,
John Hryn,
Jeffrey W. Elam,
Angel Yanguas-Gil
Abstract:
We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved u…
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We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved using this technique, with all Si-doped samples showing n-type behavior with carrier concentrations in the range of 10$^{17}$ to 10$^{19}$ cm$^{-3}$. All samples showed similar room temperature photoluminescence, with only the samples with the lowest carrier concentration showing the presence of a blue luminescence, and the Raman spectra exhibiting only phonon modes that belong to $β$-Ga$_2$O$_3$, indicating that the Ga$_2$O$_3$ films are phase pure and of high crystal quality. We further evaluated the epitaxial quality of the films by carrying out grazing incidence X-ray scattering measurements, which allowed us to discriminate the bulk and film contributions. Finally, MOS capacitors were fabricated using ALD HfO$_2$ to perform C-V measurements. The carrier concentration and dielectric values extracted from the C-V characteristics are in good agreement with Hall probe measurements. These results indicate that HVPE has a strong potential to yield device-quality $β$-Ga$_2$O$_3$ films that can be utilized to develop vertical devices for high-power electronics applications.
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Submitted 21 June, 2019;
originally announced June 2019.
