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Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs
Authors:
Yiwen Song,
Arkka Bhattacharyya,
Anwarul Karim,
Daniel Shoemaker,
Hsien-Lien Huang,
Saurav Roy,
Craig McGray,
Jacob H. Leach,
Jinwoo Hwang,
Sriram Krishnamoorthy,
Sukwon Choi
Abstract:
Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O…
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Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $μ$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches.
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Submitted 21 February, 2023; v1 submitted 13 October, 2022;
originally announced October 2022.
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High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$
Authors:
Saurav Roy,
Arkka Bhattacharyya,
Praneeth Ranga,
Heather Splawn,
Jacob Leach,
Sriram Krishnamoorthy
Abstract:
This paper presents vertical (001) oriented $β$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R$_{on-sp}$) of 0.32 m$Ω$-cm$^{2}$. The extreme permittivity field plate oxide facilitated the later…
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This paper presents vertical (001) oriented $β$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R$_{on-sp}$) of 0.32 m$Ω$-cm$^{2}$. The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage ($V_{br}$) of 687 V. The edge termination efficiency increases from 13.5 $\%$ for non-field plated structure to 63 $\%$ for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga figure of merit (BFOM) of 1.47 GW/cm$^{2}$ showing the potential of Ga$_2$O$_3$ power devices for multi-kilovolt class applications.
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Submitted 5 May, 2021;
originally announced May 2021.
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Optical and structural properties of Si doped $β$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy
Authors:
Bahadir Kucukgok,
David J. Mandia,
Jacob H. Leach,
Keith R. Evans,
Jeffrey A. Eastman,
Hua Zhou,
John Hryn,
Jeffrey W. Elam,
Angel Yanguas-Gil
Abstract:
We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved u…
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We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved using this technique, with all Si-doped samples showing n-type behavior with carrier concentrations in the range of 10$^{17}$ to 10$^{19}$ cm$^{-3}$. All samples showed similar room temperature photoluminescence, with only the samples with the lowest carrier concentration showing the presence of a blue luminescence, and the Raman spectra exhibiting only phonon modes that belong to $β$-Ga$_2$O$_3$, indicating that the Ga$_2$O$_3$ films are phase pure and of high crystal quality. We further evaluated the epitaxial quality of the films by carrying out grazing incidence X-ray scattering measurements, which allowed us to discriminate the bulk and film contributions. Finally, MOS capacitors were fabricated using ALD HfO$_2$ to perform C-V measurements. The carrier concentration and dielectric values extracted from the C-V characteristics are in good agreement with Hall probe measurements. These results indicate that HVPE has a strong potential to yield device-quality $β$-Ga$_2$O$_3$ films that can be utilized to develop vertical devices for high-power electronics applications.
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Submitted 21 June, 2019;
originally announced June 2019.
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High-quality, large-grain MoS2 films grown on 100 mm sapphire substrates using a novel molybdenum precursor
Authors:
Paul Quayle,
Bin Zhang,
Jacob Leach,
Brian Bersch,
Joshua Robinson,
Shanee Pacley
Abstract:
Two-dimensional MoS2 is a crystalline semiconductor with high potential for numerous technologies. Research in recent years has sought to exploit the direct band gap and high carrier mobility properties of monolayer MoS2 for functional applications. To date, the production of MoS2 has remained at the research level and samples are usually synthesized in small quantities using small yield, expensiv…
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Two-dimensional MoS2 is a crystalline semiconductor with high potential for numerous technologies. Research in recent years has sought to exploit the direct band gap and high carrier mobility properties of monolayer MoS2 for functional applications. To date, the production of MoS2 has remained at the research level and samples are usually synthesized in small quantities using small yield, expensive techniques. In order to realize scalable MoS2-based technology, large-area, high-quality and affordable MoS2 wafers must become available. Here we report on MoS2 films grown on 100 mm sapphire wafers by a chemical vapor deposition process utilizing hydrogen sulfide and molybdenum precursor mixtures consisting of Na2MoO4 and NaCl. The grains of these films are faceted, large-area, on the order of 1-75 microns in length on edge. Growth conditions are identified that yield monolayer MoS2 films. Raman spectroscopy shows an E2g and A1g peak separation of 17.9-19.1 cm-1. Photoluminescence spectroscopy shows that annealing the films post-growth suppresses trion emission. X-ray photoelectron spectroscopy of the annealed films shows an in increase in the S:Mo concentration ratio from 1.90:1.00 to 2.09:1.00.
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Submitted 12 November, 2018;
originally announced November 2018.
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Hydrodynamic Interactions in Two Dimensions
Authors:
R. Di Leonardo,
S. Keen,
F. Ianni,
J. Leach,
M. Padgett,
G. Ruocco
Abstract:
We measure hydrodynamic interactions between colloidal particles confined in a thin sheet of fluid. The reduced dimensionality, compared to a bulk fluid, increases dramatically the range of couplings. Using optical tweezers we force a two body system along the eigenmodes of the mobility tensor and find that eigen-mobilities change logarithmically with particle separation. At a hundred radii dist…
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We measure hydrodynamic interactions between colloidal particles confined in a thin sheet of fluid. The reduced dimensionality, compared to a bulk fluid, increases dramatically the range of couplings. Using optical tweezers we force a two body system along the eigenmodes of the mobility tensor and find that eigen-mobilities change logarithmically with particle separation. At a hundred radii distance, the mobilities for correlated and anti-correlated motions differ by a factor of two, whereas in bulk fluids, they would be practically indistinguishable. We derive the two dimensional counterpart of the Oseen hydrodynamic tensor which quantitatively reproduces the observed behavior. These results highlight the importance of dimensionality for transport and interactions in colloidal systems and proteins in biological membranes.
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Submitted 5 April, 2008;
originally announced April 2008.
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Parametric Resonance of Optically Trapped Aerosols
Authors:
R. Di Leonardo,
G. Ruocco,
J. Leach,
M. J. Padgett,
A. J. Wright,
J. M. Girkin,
D. R. Burnham,
D. McGloin
Abstract:
The Brownian dynamics of an optically trapped water droplet are investigated across the transition from over to under-damped oscillations. The spectrum of position fluctuations evolves from a Lorentzian shape typical of over-damped systems (beads in liquid solvents), to a damped harmonic oscillator spectrum showing a resonance peak. In this later under-damped regime, we excite parametric resonan…
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The Brownian dynamics of an optically trapped water droplet are investigated across the transition from over to under-damped oscillations. The spectrum of position fluctuations evolves from a Lorentzian shape typical of over-damped systems (beads in liquid solvents), to a damped harmonic oscillator spectrum showing a resonance peak. In this later under-damped regime, we excite parametric resonance by periodically modulating the trapping power at twice the resonant frequency. The power spectra of position fluctuations are in excellent agreement with the obtained analytical solutions of a parametrically modulated Langevin equation.
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Submitted 23 February, 2007;
originally announced February 2007.
