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Revealing electron-electron interactions in graphene at room temperature with the quantum twisting microscope
Authors:
M. Lee,
I. Das,
J. Herzog-Arbeitman,
J. Papp,
J. Li,
M. Daschner,
Z. Zhou,
M. Bhatt,
M. Currle,
J. Yu,
Yi Jiang,
M. Becherer,
R. Mittermeier,
P. Altpeter,
C. Obermayer,
H. Lorenz,
G. Chavez,
B. T. Le,
J. Williams,
K. Watanabe,
T. Taniguchi,
B. Andrei Bernevig,
D. K. Efetov
Abstract:
The Quantum Twisting Microscope (QTM) is a groundbreaking instrument that enables energy- and momentum-resolved measurements of quantum phases via tunneling spectroscopy across twistable van der Waals heterostructures. In this work, we significantly enhance the QTMs resolution and extend its measurement capabilities to higher energies and twist angles by incorporating hexagonal boron nitride (hBN)…
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The Quantum Twisting Microscope (QTM) is a groundbreaking instrument that enables energy- and momentum-resolved measurements of quantum phases via tunneling spectroscopy across twistable van der Waals heterostructures. In this work, we significantly enhance the QTMs resolution and extend its measurement capabilities to higher energies and twist angles by incorporating hexagonal boron nitride (hBN) as a tunneling dielectric. This advancement unveils previously inaccessible signatures of the dispersion in the tunneling between two monolayer graphene (MLG) sheets, features consistent with a logarithmic correction to the linear Dirac dispersion arising from electron-electron (e-e) interactions with a fine-structure constant of alpha = 0.32. Remarkably, we find that this effect, for the first time, can be resolved even at room temperature, where these corrections are extremely faint. Our results underscore the exceptional resolution of the QTM, which, through interferometric interlayer tunneling, can amplify even subtle modifications to the electronic band structure of two-dimensional materials. Our findings reveal that strong e-e interactions persist even in symmetric, nonordered graphene states and emphasize the QTMs unique ability to probe spectral functions and their excitations of strongly correlated ground states across a broad range of twisted and untwisted systems.
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Submitted 3 July, 2025;
originally announced July 2025.
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Assembly of High-Performance van der Waals Devices Using Commercial Polyvinyl Chloride Films
Authors:
Son T. Le,
Jeffrey J. Schwartz,
Tsegereda K. Esatu,
Sharadh Jois,
Andrea Centrone,
Karen E. Grutter,
Aubrey T. Hanbicki,
Adam L. Friedman
Abstract:
Control over the position, orientation, and stacking order of two-dimensional (2D) materials within van der Waals heterostructures is crucial for applications in electronics, spintronics, optics, and sensing. The most popular strategy for assembling 2D materials uses purpose-built stamps with working surfaces made from one of several different polymers. However, these stamps typically require tedi…
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Control over the position, orientation, and stacking order of two-dimensional (2D) materials within van der Waals heterostructures is crucial for applications in electronics, spintronics, optics, and sensing. The most popular strategy for assembling 2D materials uses purpose-built stamps with working surfaces made from one of several different polymers. However, these stamps typically require tedious preparation steps and suffer from poor durability, contamination, and limited applicability to specific 2D materials or surfaces. Here, we demonstrate significant improvements upon current 2D flake transfer and assembly practices by using mechanically durable stamps made from polyvinyl chloride (PVC) thin films. These stamps are simpler to prepare compared with existing methods and can withstand multiple transfer cycles, enabling greater reusability. We use two commercially available PVC films with distinct pick-up and release temperatures. Together, these films also enable polymer-to-polymer flake transfers and stack-and-flip fabrication of inverted heterostructures in one seamless process. Systematic comparisons of cleaning processes confirm the removal of PVC-derived residue from the assembled structures to create atomically clean interfaces. We demonstrate the utility and versatility of these polymer films and transfer process by fabricating graphene/hexagonal boron nitride heterostructure devices with high-performance electrical characteristics. Further, we demonstrate the ability to pick up and to deposit bulk aluminum gallium arsenide nanostructured films, enabling the creation of heterogeneously integrated devices. This technique increases fabrication rates, improves device quality, and enables more complex structures, thereby facilitating nanomaterial assembly in a broad range of applications.
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Submitted 13 May, 2025;
originally announced May 2025.
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Direct-Write Printed Contacts to Layered and 2D Materials
Authors:
Sharadh Jois,
Erica Lee,
Philip Li,
Tsegereda Esatu,
Jason Fleischer,
Edwin Quinn,
Genda Gu,
Vadym Kulichenko,
Luis Balicas,
Son T. Le,
Samuel W. LaGasse,
Aubrey T. Hanbicki,
Adam L. Friedman
Abstract:
Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and two-dimensional (2D) materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly ef…
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Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and two-dimensional (2D) materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS2 (semiconductor), Bi-2212 (superconductor), and Fe5GeTe2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.
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Submitted 10 April, 2025; v1 submitted 6 March, 2025;
originally announced March 2025.
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AV$_3$Sb$_5$ kagome superconductors: a review with transport measurements
Authors:
Zhuokai Xu,
Tian Le,
Xiao Lin
Abstract:
Kagome systems have garnered considerable attention due to the unique features of the sublattice structure and band topology. The recently discovered kagome metals AV$_3$Sb$_5$ (where A = K, Rb, Cs) host a rich array of symmetry-breaking phases, including exotic charge density waves (CDW), electronic nematicity, pair density waves (PDW) and superconductivity. Despite extensive experimental and the…
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Kagome systems have garnered considerable attention due to the unique features of the sublattice structure and band topology. The recently discovered kagome metals AV$_3$Sb$_5$ (where A = K, Rb, Cs) host a rich array of symmetry-breaking phases, including exotic charge density waves (CDW), electronic nematicity, pair density waves (PDW) and superconductivity. Despite extensive experimental and theoretical investigations into the diverse phases, several key issues remain contentious, such as a solid clarification of the time-reversal symmetry breaking (TRS-breaking) in the CDW order and its implications for the nature of superconducting (SC) pairing symmetry. This review aims to shed light on the transport properties of these intertwined phases, emphasizing the pivotal role that transport measurements play in uncovering the non-trivial quantum states of matter.
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Submitted 20 February, 2025; v1 submitted 19 February, 2025;
originally announced February 2025.
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Modal coupling impacts the parametric normal mode splitting: Quantifying the tunable mode coupling of a nanomechanical resonator
Authors:
Ahmed A. Barakat,
Avishek Chowdhury,
Anh Tuan Le,
Eva M. Weig
Abstract:
The estimation of the modal coupling strength between two hybridized normal modes or oscillators remains a hard task to achieve. However, the coupling effects can be unearthed by observing the system's dynamic behaviour upon energy injection. One of the manifestations of this approach is the normal mode splitting generated using parametric excitation. In this contribution, a rigorous and generic m…
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The estimation of the modal coupling strength between two hybridized normal modes or oscillators remains a hard task to achieve. However, the coupling effects can be unearthed by observing the system's dynamic behaviour upon energy injection. One of the manifestations of this approach is the normal mode splitting generated using parametric excitation. In this contribution, a rigorous and generic mathematical formulation for the parametric normal mode splitting in any two-mode dynamical system is presented. It allows for estimating the coupling strength both in the weak and in the strong coupling regime, and irrespective of the degree of hybridization between the modes. The method is applied on the vibrations of a nanomechanical two-mode system implemented in a tunable nanostring resonator. We find good agreement between the experiment and the theoretical model, and are able to quantify the modal coupling of the nanostring as a function of the applied bias voltage.
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Submitted 21 December, 2024;
originally announced December 2024.
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Fractal structure, depinning, and hysteresis of dislocations in high-entropy alloys
Authors:
Hoa Thi Le,
Wolfram G. Nöhring,
Lars Pastewka
Abstract:
High-entropy alloys (HEAs) are complex alloys containing multiple elements in high concentrations. Plasticity in HEAs is carried by dislocations, but the random nature of their composition pins dislocations, effectively hindering their motion. We investigate the resulting complex structure of the dislocation in terms of spatial correlation functions, which allow us to draw conclusions on the fract…
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High-entropy alloys (HEAs) are complex alloys containing multiple elements in high concentrations. Plasticity in HEAs is carried by dislocations, but the random nature of their composition pins dislocations, effectively hindering their motion. We investigate the resulting complex structure of the dislocation in terms of spatial correlation functions, which allow us to draw conclusions on the fractal geometry of the dislocation. At high temperature, where thermal fluctuations dominate, dislocations adopt the structure of a random walk with Hurst exponent $1/2$ or fractal dimension $3/2$. At low temperature we find larger Hurst exponents (lower dimensions), with a crossover to an uncorrelated structure beyond a correlation length. These changes in structure are accompanied by an emergence of hysteresis (and hence pinning) in the motion of the dislocation at low temperature. We use a modified Labusch/Edwards-Wilkinson-model to argue that this correlation length must be an intrinsic property of the HEA. This means dislocations in HEAs are an individual pinning limit, where segments of the dislocation are independently pinned by local distortions of the crystal lattice that are induced by chemical heterogeneity.
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Submitted 29 October, 2024;
originally announced October 2024.
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Fano-enhanced low-loss on-chip superconducting microwave circulator
Authors:
N. Pradeep Kumar,
Dat Thanh Le,
Prasanna Pakkiam,
Thomas M. Stace,
Arkady Fedorov
Abstract:
Ferrite-free circulators that are passive and readily integratable on a chip are highly sought-after in quantum technologies based on superconducting circuits. In our previous work, we implemented such a circulator using a three-Josephson-junction loop that exhibited unambiguous nonreciprocity and signal circulation, but required junction energies to be within $1\%$ of design values. This toleranc…
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Ferrite-free circulators that are passive and readily integratable on a chip are highly sought-after in quantum technologies based on superconducting circuits. In our previous work, we implemented such a circulator using a three-Josephson-junction loop that exhibited unambiguous nonreciprocity and signal circulation, but required junction energies to be within $1\%$ of design values. This tolerance is tighter than standard junction fabrication methods provide, so we propose and demonstrate a design improvement that relaxes the required junction fabrication precision, allowing for higher device performance and fabrication yield. Specifically, we introduce large direct capacitive couplings between the waveguides to create strong Fano scattering interference. We measure enhanced `circulation fidelity' above $97\%$, with optimised on-resonance insertion loss of $0.2$~dB, isolation of $18$~dB, and power reflectance of $-15$~dB, in good agreement with model calculations.
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Submitted 20 June, 2024;
originally announced June 2024.
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Magnetoresistance hysteresis in the superconduting state of Kagome CsV$_3$Sb$_5$
Authors:
Tian Le,
Jinjin Liu,
Zhiwei Wang,
Xiao Lin
Abstract:
The hysteresis of magnetoresistance observed in superconductors is of great interest due to its potential connection with unconventional superconductivity. In this study, we perform electrical transport measurements on Kagome superconductor CsV$_3$Sb$_5$ nanoflakes and uncover unusual hysteretic behaviour of magnetoresistance in the superconducting state. This hysteresis can be induced by applying…
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The hysteresis of magnetoresistance observed in superconductors is of great interest due to its potential connection with unconventional superconductivity. In this study, we perform electrical transport measurements on Kagome superconductor CsV$_3$Sb$_5$ nanoflakes and uncover unusual hysteretic behaviour of magnetoresistance in the superconducting state. This hysteresis can be induced by applying either a large DC or AC current at temperatures ($T$) well below the superconducting transition temperature ($T_{\rm c}$). As $T$ approaches $T_{\rm c}$, similar weak hysteresis is also detected by applying a small current. Various scenarios are discussed, with particular focus on the effects of vortex pinning and the presence of time-reversal-symmtery-breaking superconducting domains. Our findings support the latter, hinting at chiral superconductivity in Kagome superconductors.
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Submitted 21 June, 2024; v1 submitted 18 June, 2024;
originally announced June 2024.
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Tailoring wetting properties of organic hole-transport interlayers for slot-die coated perovskite solar modules
Authors:
T. S. Le,
I. A. Chuykoa,
L. O. Luchnikova,
K. A. Ilicheva,
P. O. Sukhorukova,
D. O. Balakirev,
N. S. Saratovsky,
A. O. Alekseev,
S. S. Kozlov,
D. S. Muratov,
V. V. Voronov,
P. A. Gostishchev,
D. A. Kiselev,
T. S. Ilina,
A. A. Vasilev,
A. Y. Polyakov,
E. A. Svidchenko,
O. A. Maloshitskaya,
Yu. N. Luponosov,
D. S. Saranin
Abstract:
The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrat…
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The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrate a triphenylamine-based polymer, pTPA-TDP, blended with SAM based on 5-[4-[4-(diphenylamino) phenyl] thiophene-2-carboxylic acid (TPATC), to address the challenges of uniform slot-die coating and interface passivation in large-area modules. We fabricated p-i-n oriented PSMs on 50x50 mm2 substrates (12-sub-cells) with NiO hole transport layer (HTL) and organic interlayers for surface modification. Wetting angle mapping demonstrated that ununiform regions of the slot-die coated SAM have hydrophobicity with contact angle values up to 90°, causing fluctuations in absorber thickness and the presence of macro-defects at buried interfaces. The incorporation of the blended interlayer to NiO/perovskite junction homogenized the surface wettability (contact angle=40°) and mitigated lattice strain in the absorber. This enabled the effective use of SAM properties on a large-area surface, improving energy level alignment and enhancing the power conversion efficiency (PCE) of the modules from 13.98% to 15.83% and stability (ISOS-L-2, T80 period) from 500-1000 hours to 1630 hours. Investigation of PSMs upon cooling till -5 °C showed that the PCE increased by +0.19%/°C for samples with NiO HTL, while using SAM and blended interlayers raised the coefficient to ~0.40%/°C due to changes in activation energy and trap contributions to device performance across a wide temperature range.
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Submitted 12 June, 2024;
originally announced June 2024.
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Electronic Properties of Electroactive Ferrocenyl-Functionalized MoS2
Authors:
Trung Nghia Nguyên Lê,
Kirill Kondratenko,
Imane Arbouch,
Alain Moréac,
d Jean-Christophe Le Breton,
Colin van Dyck,
Jérôme Cornil,
Dominique Vuillaume,
Bruno Fabre
Abstract:
The attachment of redox active molecules to transition metal dichalcogenides (TMDs), such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material charge/spin transport properties by the redox state of the grafted molecule and thus the applied electrical potential. In this work, defective plasma treated MoS2 is functionalized…
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The attachment of redox active molecules to transition metal dichalcogenides (TMDs), such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material charge/spin transport properties by the redox state of the grafted molecule and thus the applied electrical potential. In this work, defective plasma treated MoS2 is functionalized by a ferrocene derivative and thoroughly investigated by various characterization techniques, such as Raman, photoluminescence, X-ray photoelectron spectroscopies, atomic force microscopy (AFM) and electrochemistry. Furthermore, in-plane and out-of-plane conductive-AFM measurements (I-V and first derivative dI/dV-V curves) are measured to investigate the effect of the chemical functionalization of MoS2 on the electron transport properties. While the conduction and valence bands are determined at +0.7 and -1.2 eV with respect of the electrode Fermi energy for pristineMoS2, additional states in an energy range of ca. 0.45 eV below the MoS2 conduction band are measured after plasma treatment, attributed to S-vacancies. For ferrocene functionalized MoS2, the S-vacancy states are no longer observed resulting from the defect healing. However, two bumps at lower voltages in the dI/dV-V indicate a contribution to the electron transport through ferrocene HOMO, which is located in the MoS2 band gap at ca. 0.4-0.6 eV below the Fermi energy. These results are in good agreement with theoretical density functional theory (DFT) calculations and UV photoelectron spectroscopy (UPS) measurements.
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Submitted 16 April, 2024;
originally announced April 2024.
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The Problem Of Image Super-Resolution, Denoising And Some Image Restoration Methods In Deep Learning Models
Authors:
Ngoc-Giau Pham,
Thanh-Hai Tong Le,
Van-Hieu Duong,
Hong-Ngoc Tran,
Phuoc-Hung Vo
Abstract:
In this article, we address the challenges of image super-resolution and noise reduction, which are crucial for enhancing the quality of images derived from low-resolution or noisy data. We compared and assessed several approaches for upgrading low-resolution images to higher resolutions and for eliminating unwanted noise, all while maintaining the essential characteristics of the original images…
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In this article, we address the challenges of image super-resolution and noise reduction, which are crucial for enhancing the quality of images derived from low-resolution or noisy data. We compared and assessed several approaches for upgrading low-resolution images to higher resolutions and for eliminating unwanted noise, all while maintaining the essential characteristics of the original images and recovering images from poor quality or damaged data using deep learning models. Our analysis and the experimental outcomes on image quality metrics indicate that the EDCNN neural network model, enhanced with pretrained weights, significantly outperforms other methods with a Train PSNR of 31.215, a Valid PSNR of 29.493, and a Test PSNR of 31.6632.
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Submitted 13 June, 2024; v1 submitted 15 April, 2024;
originally announced April 2024.
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Inverse melting and intertwined orders in PrCuSb$_2$
Authors:
H. Q. Ye,
Y. N. Zhang,
T. Le,
H. Q. Yuan,
M. Smidman
Abstract:
Much of the rich physics of correlated systems is manifested in the diverse range of intertwined ordered phases and other quantum states that are associated with different electronic and structural degrees of freedom. Here we find that PrCuSb$_2$ exhibits such phenomena, which at ambient pressure exhibits a fragile antiferromagnetic order, where cooling in a small $c$ axis magnetic field leads to…
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Much of the rich physics of correlated systems is manifested in the diverse range of intertwined ordered phases and other quantum states that are associated with different electronic and structural degrees of freedom. Here we find that PrCuSb$_2$ exhibits such phenomena, which at ambient pressure exhibits a fragile antiferromagnetic order, where cooling in a small $c$ axis magnetic field leads to an additional transition to a field-induced ferromagnetic state. This corresponds to an 'inverse melting' effect, whereby further cooling the system restores symmetries of the paramagnetic state broken at the antiferromagnetic transition. Moreover, hydrostatic pressure induces an additional first-order transition at low temperatures, which despite being not likely associated with solely magnetic degrees of freedom, is closely entwined with the magnetic order, disappearing once antiferromagnetism is destroyed by pressure or magnetic fields. Consequently, PrCuSb$_2$ presents a distinct scenario for interplay between different orders, underscoring the breadth of such behaviors within one family of correlated materials.
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Submitted 9 April, 2024;
originally announced April 2024.
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Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures
Authors:
Son T. Le,
Thuc T. Mai,
Maria F. Munoz,
Angela R. Hight Walker,
Curt A. Richter,
Aubrey T. Hanbicki,
Adam L. Friedman
Abstract:
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined doping type and magnitude. After each optical doping procedure, mag…
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Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined doping type and magnitude. After each optical doping procedure, magnetotransport measurements including quantum Hall measurements are performed to characterize the device performance. In the unipolar (p+-p-p+ and n-n+-n) configurations, we observe quantization of the longitudinal resistance, proving well-defined doped regions and interfaces that are further analyzed by Landauer-Buttiker modeling. Our unique measurements and modeling of these optically doped devices reveal a complete separation of the p- and n-Landau level edge states. The non-interaction of the edge states results in an observed "insulating" state in devices with a bi-polar p-n-p configuration that is uncommon and has not been measured previously in graphene devices. This insulating state could be utilized in high-performance graphene electrical switches. These quantitative magnetotransport measurements confirm that these doping techniques can be applied to any 2D materials encapsulated within hBN layers, enabling versatile, rewritable circuit elements for future computing and memory applications.
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Submitted 3 June, 2024; v1 submitted 4 March, 2024;
originally announced March 2024.
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Predictive Models based on Deep Learning Algorithms for Tensile Deformation of AlCoCuCrFeNi High-entropy alloy
Authors:
Hoang-Giang Nguyen,
Thanh-Dung Le
Abstract:
High-entropy alloys (HEAs) stand out between multi-component alloys due to their attractive microstructures and mechanical properties. In this investigation, molecular dynamics (MD) simulation and machine learning were used to ascertain the deformation mechanism of AlCoCuCrFeNi HEAs under the influence of temperature, strain rate, and grain sizes. First, the MD simulation shows that the yield stre…
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High-entropy alloys (HEAs) stand out between multi-component alloys due to their attractive microstructures and mechanical properties. In this investigation, molecular dynamics (MD) simulation and machine learning were used to ascertain the deformation mechanism of AlCoCuCrFeNi HEAs under the influence of temperature, strain rate, and grain sizes. First, the MD simulation shows that the yield stress decreases significantly as the strain and temperature increase. In other cases, changes in strain rate and grain size have less effect on mechanical properties than changes in strain and temperature. The alloys exhibited superplastic behavior under all test conditions. The deformity mechanism discloses that strain and temperature are the main sources of beginning strain, and the shear bands move along the uniaxial tensile axis inside the workpiece. Furthermore, the fast phase shift of inclusion under mild strain indicates the relative instability of the inclusion phase of HCP. Ultimately, the dislocation evolution mechanism shows that the dislocations are transported to free surfaces under increased strain when they nucleate around the grain boundary. Surprisingly, the ML prediction results also confirm the same characteristics as those confirmed from the MD simulation. Hence, the combination of MD and ML reinforces the confidence in the findings of mechanical characteristics of HEA. Consequently, this combination fills the gaps between MD and ML, which can significantly save time human power and cost to conduct real experiments for testing HEA deformation in practice.
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Submitted 2 February, 2024;
originally announced February 2024.
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Photo Stabilization of p-i-n Perovskite Solar Cells with Bathocuproine: MXene
Authors:
Anastasia Yusheva,
Danila Saranin,
Dmitry Muratov,
Pavel Gostishchev,
Hanna Pazniak,
Alessia Di Vito,
Son Thai Le,
Lev Luchnikov,
Anton Vasiliev,
Dmitry Podgorny,
Denis Kuznetsov,
Sergey Didenko,
Aldo Di Carlo
Abstract:
Interface engineering is one of the promising strategies for the long-term stabilization of perovskite solar cells, preventing chemical decomposition induced by external agents and promoting fast charge transfer. Recently, MXenes-2D structured transition metal carbides and nitrides with various functionalization (=O,-F,-OH) demonstrated high potential for mastering the work function in halide pero…
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Interface engineering is one of the promising strategies for the long-term stabilization of perovskite solar cells, preventing chemical decomposition induced by external agents and promoting fast charge transfer. Recently, MXenes-2D structured transition metal carbides and nitrides with various functionalization (=O,-F,-OH) demonstrated high potential for mastering the work function in halide perovskite absorbers and significantly improved the n-type charge collection in solar cells. This work demonstrates that MXenes allow for efficient stabilization of perovskite solar cells besides improving their performances. We introduce a new mixed composite bathocuproine:MXene, i.e., (BCP:MXene) interlayer at the interface between an electron-transport layer (ETL) and a metal cathode in the p-in device structure. Our investigation demonstrates that the use of BCP:MXene interlayer slightly increases the power conversation efficiency (PCE) for PSCs (from 16.5 for reference to 17.5%) but dramatically improves the out of Glove-Box stability. Under ISOS-L-2 light soaking stress at 63$\pm$ 1.5{\textdegree}C, The T80 (time needed to reduce efficiency down to 80% of the initial one) period increased from 460 h to > 2300 h.
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Submitted 16 November, 2023;
originally announced November 2023.
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Superconducting diode effect and interference patterns in Kagome CsV3Sb5
Authors:
Tian Le,
Zhiming Pan,
Zhuokai Xu,
Jinjin Liu,
Jialu Wang,
Zhefeng Lou,
Xiaohui Yang,
Zhiwei Wang,
Yugui Yao,
Congjun Wu,
Xiao Lin
Abstract:
The interplay among frustrated lattice geometry, nontrivial band topology and correlation yields rich quantum states of matter in Kagome systems. A series of recent members in this family, AV3Sb5 (A= K, Rb, Cs), exhibit a cascade of symmetry-breaking transitions, involving the 3Q chiral charge ordering, electronic nematicity, roton pair-density-wave and superconductivity. The nature of the superco…
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The interplay among frustrated lattice geometry, nontrivial band topology and correlation yields rich quantum states of matter in Kagome systems. A series of recent members in this family, AV3Sb5 (A= K, Rb, Cs), exhibit a cascade of symmetry-breaking transitions, involving the 3Q chiral charge ordering, electronic nematicity, roton pair-density-wave and superconductivity. The nature of the superconducting order is yet to be resolved. Here, we report an indication of chiral superconducting domains with boundary supercurrents in intrinsic CsV3Sb5 flakes. Magnetic field-free superconducting diode effect is observed with polarity modulated by thermal histories, suggesting dynamical superconducting order domains in a spontaneous time-reversal symmetry breaking background. Strikingly, the critical current exhibits the double-slit superconducting interference patterns when subjected to an external magnetic field. Characteristics of the patterns are modulated by thermal cycling. These phenomena are proposed as a consequence of periodically modulated supercurrents flowing along certain domain boundaries constrained by fluxoid quantization. Our results imply a chiral superconducting order, opening a potential for exploring exotic physics, e.g. Majorana zero modes, in this intriguing topological Kagome system.
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Submitted 15 May, 2024; v1 submitted 1 September, 2023;
originally announced September 2023.
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Coexisting and interacting spin torque driven free and reference layer magnetic droplet solitons
Authors:
Sheng Jiang,
Sunjae Chung,
Martina Ahlberg,
Anreas Frisk,
Q. Tuan Le,
Hamid Mazraati,
Afshin Houshang,
Olle Heinonen,
Johan Åkerman
Abstract:
Magnetic droplets are nanoscale, non-topological, magnetodynamical solitons that can be nucleated in spin torque nano-oscillators (STNOs) or spin Hall nano-oscillators (SHNOs). All theoretical, numerical, and experimental droplet studies have so far focused on the free layer (FL), and any additional dynamics in the reference layer (RL) have been entirely ignored. Here we show, using all-perpendicu…
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Magnetic droplets are nanoscale, non-topological, magnetodynamical solitons that can be nucleated in spin torque nano-oscillators (STNOs) or spin Hall nano-oscillators (SHNOs). All theoretical, numerical, and experimental droplet studies have so far focused on the free layer (FL), and any additional dynamics in the reference layer (RL) have been entirely ignored. Here we show, using all-perpendicular STNOs, that there is not only significant magnetodynamics in the RL, but the reference layer itself can host a droplet coexisting with the FL droplet. Both droplets are observed experimentally as stepwise changes and sharp peaks in the dc and differential resistance, respectively. Whereas the single FL droplet is highly stable, the coexistence state exhibits high-power broadband microwave noise. Micromagnetic simulations corroborate the experimental results and reveal a strong interaction between the droplets. Our demonstration of strongly interacting and closely spaced droplets offers a unique platform for fundamental studies of highly non-linear soliton pair dynamics.
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Submitted 12 April, 2023;
originally announced April 2023.
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Magnetic field filtering of the hinge supercurrent in unconventional metal NiTe$_2$-based Josephson junctions
Authors:
Tian Le,
Ruihan Zhang,
Changcun Li,
Ruiyang Jiang,
Haohao Sheng,
Linfeng Tu,
Xuewei Cao,
Zhaozheng Lyu,
Jie Shen,
Guangtong Liu,
Fucai Liu,
Zhijun Wang,
Li Lu,
Fanming Qu
Abstract:
Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Besides, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a…
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Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Besides, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a powerful diagnostic approach. Here, we report the observations of conspicuous hinge supercurrent in NiTe$_2$-based JJs. Particularly, applying an in-plane magnetic field along the Josephson current could rapidly suppress the bulk supercurrent and retain the nearly pure hinge supercurrent, namely the magnetic field filtering of supercurrent. Further systematic comparative analysis and theoretical calculations demonstrate the existence of unconventional nature and obstructed hinge states in NiTe$_2$. Our results revealed the unique hinge states in unconventional metal NiTe$_2$, and demonstrated in-plane magnetic field as an efficient method to filter out the futile bulk contributions and thereby to highlight the hinge states hidden in topological/unconventional materials.
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Submitted 9 March, 2023;
originally announced March 2023.
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Gate-tunable negative differential conductance in hybrid semiconductor-superconductor devices
Authors:
Mingli Liu,
Dong Pan,
Tian Le,
Jiangbo He,
Zhongmou Jia,
Shang Zhu,
Guang Yang,
Zhaozheng Lyu,
Guangtong Liu,
Jie Shen,
Jianhua Zhao,
Li Lu,
Fanming Qu
Abstract:
Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor-superconductor devices, i.e., normal metal-superconducting nanowire-normal metal and normal m…
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Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor-superconductor devices, i.e., normal metal-superconducting nanowire-normal metal and normal metal-superconducting nanowire-superconductor devices. Specifically, we study the dependence of the NDCs on back-gate voltage and magnetic field. When the back-gate voltage decreases, these NDCs weaken and evolve into positive differential conductance dips; and meanwhile they move away from the superconducting gap towards high bias voltage, and disappear eventually. In addition, with the increase of magnetic field, the NDCs/dips follow the evolution of the superconducting gap, and disappear when the gap closes. We interpret these observations and reach a good agreement by combining the Blonder-Tinkham-Klapwijk (BTK) model and the critical supercurrent effect in the nanowire, which we call the BTK-supercurrent model. Our results provide an in-depth understanding of the tunneling transport in hybrid semiconductor-superconductor devices.
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Submitted 28 February, 2023;
originally announced March 2023.
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Inverse-current quantum electro-oscillations in a charge-density wave insulator
Authors:
Tian Le,
Ruiyang Jiang,
Linfeng Tu,
Renji Bian,
Yiwen Ma,
Yunteng Shi,
Ke Jia,
Zhilin Li,
Zhaozheng Lyu,
Xuewei Cao,
Jie Shen,
Guangtong Liu,
Youguo Shi,
Fucai Liu,
Yi Zhou,
Li Lu,
Fanming Qu
Abstract:
Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I…
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Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I and TaS$_3$ nanowires. Such oscillations manifest in the nearly infinite Fröhlich conductivity region where the undamped CDW flow forms in a finite electric current, and finally disappear after the oscillation index n reaches 1. A systematic investigation on the effect of temperature and magnetic field establishes that the observed electro-oscillations are a coherent quantum phenomenon. We discuss the possibilities of the physical mechanisms, including the formation of sliding-driven inherent Floquet sidebands. Our results introduce a new member in the family of quantum oscillations, and shed light on plausible avenues to explore novel physics and potential applications of coherent density-wave condensates.
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Submitted 19 June, 2024; v1 submitted 16 February, 2023;
originally announced February 2023.
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Magnetic properties of the layered heavy fermion antiferromagnet CePdGa$_6$
Authors:
H. Q. Ye,
T. Le,
H. Su,
Y. N. Zhang,
S. S. Luo,
M. J. Gutmann,
H. Q. Yuan,
M. Smidman
Abstract:
We report the magnetic properties of the layered heavy fermion antiferromagnet CePdGa$_{6}$, and their evolution upon tuning with the application of magnetic field and pressure. CePdGa$_{6}$ orders antiferromagnetically below $T\rm_{N}$ = 5.2 K, where there is evidence for heavy fermion behavior from an enhanced Sommerfeld coefficient. Our results are best explained by a magnetic ground state of f…
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We report the magnetic properties of the layered heavy fermion antiferromagnet CePdGa$_{6}$, and their evolution upon tuning with the application of magnetic field and pressure. CePdGa$_{6}$ orders antiferromagnetically below $T\rm_{N}$ = 5.2 K, where there is evidence for heavy fermion behavior from an enhanced Sommerfeld coefficient. Our results are best explained by a magnetic ground state of ferromagnetically coupled layers of Ce $4f$-moments orientated along the $c$-axis, with antiferromagnetic coupling between layers. At low temperatures we observe two metamagnetic transitions for fields applied along the $c$-axis corresponding to spin-flip transitions, where the lower transition is to a different magnetic phase with a magnetization one-third of the saturated value. From our analysis of the magnetic susceptibility, we propose a CEF level scheme which accounts for the Ising anisotropy at low temperatures, and we find that the evolution of the magnetic ground state can be explained considering both antiferromagnetic exchange between nearest neighbor and next nearest neighbor layers, indicating the influence of long-range interactions. Meanwhile we find little change of $T\rm_{N}$ upon applying hydrostatic pressures up to 2.2 GPa, suggesting that significantly higher pressures are required to examine for possible quantum critical behaviors.
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Submitted 3 January, 2023;
originally announced January 2023.
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Passive superconducting circulator on a chip
Authors:
Rohit Navarathna,
Dat Thanh Le,
Andrés Rosario Hamann,
Hien Duy Nguyen,
Thomas M. Stace,
Arkady Fedorov
Abstract:
An on-chip microwave circulator that is compatible with superconducting devices is a key element for scale-up of superconducting circuits. Previous approaches to integrating circulators on chip involve either external driving that requires extra microwave lines or a strong magnetic field that would compromise superconductivity. Here we report the first proof-of-principle realisation of a passive o…
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An on-chip microwave circulator that is compatible with superconducting devices is a key element for scale-up of superconducting circuits. Previous approaches to integrating circulators on chip involve either external driving that requires extra microwave lines or a strong magnetic field that would compromise superconductivity. Here we report the first proof-of-principle realisation of a passive on-chip circulator which is made from a superconducting loop interrupted by three notionally-identical Josephson junctions and is tuned with only DC control fields. Our experimental results shows evidence for nonreciprocal scattering, and excellent agreement with theoretical simulations. We also present a detailed analysis of quasiparticle tunneling in our device using a hidden Markov model. By reducing the junction asymmetry and utilising the known methods of protection from quasiparticles, we anticipate that Josephson-loop circulator will become ubiquitous in superconducting circuits.
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Submitted 4 September, 2022; v1 submitted 28 August, 2022;
originally announced August 2022.
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An Effective Activation Method for Industrially Produced TiFeMn Powder for Hydrogen Storage
Authors:
David Michael Dreistadt,
Thi-Thu Le,
Giovanni Capurso,
José M. Bellosta von Colbe,
Archa Santhosh,
Claudio Pistidda,
Nico Scharnagl,
Henry Ovri,
Chiara Milanese,
Paul Jerabek,
Thomas Klassen,
Julian Jepsen
Abstract:
This work proposes an effective thermal activation method with low technical effort for industrially produced titanium-iron-manganese powders (TiFeMn) for hydrogen storage. In this context, the influence of temperature and particle size of TiFeMn on the activation process is systematically studied. The results obtained from this investigation suggest that the activation of the TiFeMn material at t…
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This work proposes an effective thermal activation method with low technical effort for industrially produced titanium-iron-manganese powders (TiFeMn) for hydrogen storage. In this context, the influence of temperature and particle size of TiFeMn on the activation process is systematically studied. The results obtained from this investigation suggest that the activation of the TiFeMn material at temperatures as low as 50 °C is already possible and that an increase to 90 °C strongly reduces the incubation time for activation, i.e. the incubation time of the 90 °C/90 °C sample is about 0.84 h while ~ 277 h is required for the 50 °C/50 °C sample. Selecting TiFeMn particles of larger size also leads to significant improvements in the activation performance of the investigated material. The proposed activation routine makes it possible to overcome the oxide layer existing on the compound surface, which acts as a diffusion barrier for the hydrogen atoms. This activation method induces further cracks and defects in the powder granules, generating new surfaces for hydrogen absorption with greater frequency, and thus leading to faster sorption kinetics in the subsequent absorption-desorption cycles.
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Submitted 16 June, 2022; v1 submitted 19 May, 2022;
originally announced May 2022.
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Correlated reference-assisted variational quantum eigensolver
Authors:
Nhan Trong Le,
Lan Nguyen Tran
Abstract:
We propose an active-space approximation to reduce the quantum resources required for variational quantum eigensolver (VQE). Starting from the double exponential unitary coupled-cluster ansatz and employing the downfolding technique, we arrive at an effective Hamiltonian for active space composed of the bare Hamiltonian and a correlated potential caused by the internal-external interaction. The co…
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We propose an active-space approximation to reduce the quantum resources required for variational quantum eigensolver (VQE). Starting from the double exponential unitary coupled-cluster ansatz and employing the downfolding technique, we arrive at an effective Hamiltonian for active space composed of the bare Hamiltonian and a correlated potential caused by the internal-external interaction. The correlated potential is obtained from the one-body second-order Møller-Plesset perturbation theory (OBMP2), which is derived using the canonical transformation and cumulant approximation. Considering different systems with singlet and doublet ground states, we examine the accuracy in predicting both energy and density matrix (by evaluating dipole moment). We show that our approach can dramatically outperform the active-space VQE with an uncorrelated Hartree-Fock reference.
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Submitted 4 June, 2023; v1 submitted 6 May, 2022;
originally announced May 2022.
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How to Report and Benchmark Emerging Field-Effect Transistors
Authors:
Zhihui Cheng,
Chin-Sheng Pang,
Peiqi Wang,
Son T. Le,
Yanqing Wu,
Davood Shahrjerdi,
Iuliana Radu,
Max C. Lemme,
Lian-Mao Peng,
Xiangfeng Duan,
Zhihong Chen,
Joerg Appenzeller,
Steven J. Koester,
Eric Pop,
Aaron D. Franklin,
Curt A. Richter
Abstract:
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc…
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Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.
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Submitted 4 August, 2022; v1 submitted 30 March, 2022;
originally announced March 2022.
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Long range ionic and short range hydration effects govern strongly anisotropic clay nanoparticle interactions
Authors:
Andrea Zen,
Tai Bui,
Tran Thi Bao Le,
Weparn J. Tay,
Kuhan Chellappah,
Ian R. Collins,
Richard D. Rickman,
Alberto Striolo,
Angelos Michaelides
Abstract:
The aggregation of clay particles in aqueous solution is a ubiquitous everyday process of broad environmental and technological importance. However, it is poorly understood at the all-important atomistic level since it depends on a complex and dynamic interplay of solvent-mediated electrostatic, hydrogen-bonding, and dispersion interactions. With this in mind we have performed an extensive set of…
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The aggregation of clay particles in aqueous solution is a ubiquitous everyday process of broad environmental and technological importance. However, it is poorly understood at the all-important atomistic level since it depends on a complex and dynamic interplay of solvent-mediated electrostatic, hydrogen-bonding, and dispersion interactions. With this in mind we have performed an extensive set of classical molecular dynamics simulations (included enhanced sampling simulations) on the interactions between model kaolinite nanoparticles in pure and salty water. Our simulations reveal highly anisotropic behaviour in which the interaction between the nanoparticles varies from attractive to repulsive depending on the relative orientation of the nanoparticles. Detailed analysis reveals that at large separation (>1.5 nm) this interaction is dominated by electrostatic effects whereas at smaller separations the nature of the water hydration structure becomes critical. This study highlights an incredible richness in how clay nanoparticles interact, which should be accounted for in e.g. coarse grained models of clay nanoparticle aggregation.
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Submitted 4 February, 2022;
originally announced February 2022.
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Geometric interference in a high-mobility graphene annulus p-n junction device
Authors:
Son T. Le,
Albert F. Rigosi,
Joseph A. Hagmann,
Christopher Gutierrez,
Ji Ung Lee,
Curt A. Richter
Abstract:
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Ahar…
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The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Aharonov-Bohm oscillations, Fabry Perot interference at the junction, or moiré potentials. The device data are compared with those of another device fabricated with a traditional Hall bar geometry, as well as with quantum transport simulation data. Since the two devices are of different topological classes, the subtle differences observed in the corresponding measured data indicate that the most likely source of the observed geometric interference patterns is quantum scarring.
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Submitted 29 December, 2021;
originally announced December 2021.
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Anomalous Josephson Effect in Topological Insulator-Based Josephson Trijunction
Authors:
Xiang Zhang,
Zhaozheng Lyu,
Guang Yang,
Bing Li,
Yan-Liang Hou,
Tian Le,
Xiang Wang,
Anqi Wang,
Xiaopei Sun,
Enna Zhuo,
Guangtong Liu,
Jie Shen,
Fanming Qu,
Li Lu
Abstract:
We studied anomalous Josephson effect (AJE) in Josephson trijunctions fabricated on Bi$_2$Se$_3$, and found that the AJE in T-shaped trijunctions significantly alters the Majorana phase diagram of the trijunctions, when an in-plane magnetic field is applied parallel to two of the three single junctions. Such a phenomenon in topological insulator-based Josephson trijunction provides unambiguous evi…
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We studied anomalous Josephson effect (AJE) in Josephson trijunctions fabricated on Bi$_2$Se$_3$, and found that the AJE in T-shaped trijunctions significantly alters the Majorana phase diagram of the trijunctions, when an in-plane magnetic field is applied parallel to two of the three single junctions. Such a phenomenon in topological insulator-based Josephson trijunction provides unambiguous evidence for the existence of AJE in the system, and might provide an additional knob for controlling the Majorana bound states in the Fu-Kane scheme of topological quantum computation.
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Submitted 16 December, 2021;
originally announced December 2021.
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Full superconducting gap and type-I to type-II superconductivity transition in single crystalline NbGe2
Authors:
Dongting Zhang,
Tian Le,
Baijing Lv,
Lichang Yin,
Chufan Chen,
Zhiyong Nie,
Dajun Su,
Huiqiu Yuan,
Zhu-An Xu,
Xin Lu
Abstract:
We report a mechanical point-contact spectroscopy study on the single crystalline NbGe$_2$ with a superconducting transition temperature $T\rm_c$ = 2.0 - 2.1 K. The differential conductance curves at 0.3 K can be well fitted by a single gap s-wave Blonder-Tinkham-Klapwijk model and the temperature dependent gap follows a standard Bardeen-Cooper-Schrieffer behavior, yielding $Δ_0 \sim$ 0.32 meV and…
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We report a mechanical point-contact spectroscopy study on the single crystalline NbGe$_2$ with a superconducting transition temperature $T\rm_c$ = 2.0 - 2.1 K. The differential conductance curves at 0.3 K can be well fitted by a single gap s-wave Blonder-Tinkham-Klapwijk model and the temperature dependent gap follows a standard Bardeen-Cooper-Schrieffer behavior, yielding $Δ_0 \sim$ 0.32 meV and 2$Δ_0$/$k\rm_{B}$$T\rm_{c}$ = 3.62 in the weak coupling limit. In magnetic field, the superconducting gap at 0.3 K keeps constant up to $H_{c1}\sim$150 Oe and gradually decreases until $H_{c2}\sim$350 Oe, indicating NbGe$_2$ going through a transition from type-I to type-II (possible type-II/1) superconductor at low temperature.
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Submitted 28 June, 2021;
originally announced June 2021.
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Erasable superconductivity in topological insulator Bi2Se3 induced by voltage pulse
Authors:
Tian Le,
Qikai Ye,
Chufan Chen,
Lichang Yin,
Dongting Zhang,
Xiaozhi Wang,
Xin Lu
Abstract:
Three-dimensional topological insulators (TIs) attract much attention due to its topologically protected Dirac surface states. Doping into TIs or their proximity with normal superconductors can promote the realization of topological superconductivity(SC) and Majorana fermions with potential applications in quantum computations. Here, an emergent superconductivity was observed in local mesoscopic p…
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Three-dimensional topological insulators (TIs) attract much attention due to its topologically protected Dirac surface states. Doping into TIs or their proximity with normal superconductors can promote the realization of topological superconductivity(SC) and Majorana fermions with potential applications in quantum computations. Here, an emergent superconductivity was observed in local mesoscopic point-contacts on the topological insulator Bi2Se3 by applying a voltage pulse through the contacts, evidenced by the Andreev reflection peak in the point-contact spectra and a visible resistance drop in the four-probe electrical resistance measurements. More intriguingly, the superconductivity can be erased with thermal cycles by warming up to high temperatures (300 K) and induced again by the voltage pulse at the base temperature (1.9 K), suggesting a significance for designing new types of quantum devices. Nematic behaviour is also observed in the superconducting state, similar to the case of CuxBi2Se3 as topological superconductor candidates.
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Submitted 24 June, 2021;
originally announced June 2021.
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Freezing and thawing magnetic droplet solitons
Authors:
Martina Ahlberg,
Sunjae Chung,
Sheng Jiang,
Q. Tuan Le,
Roman Khymyn,
Hamid Mazraati,
Markus Weigand,
Iuliia Bykova,
Felix Groß,
Eberhard Goering,
Gisela Schütz,
Joachim Gräfe,
Johan Åkerman
Abstract:
Magnetic droplets are non-topological magnetodynamical solitons displaying a wide range of complex dynamic phenomena with potential for microwave signal generation. Bubbles, on the other hand, are internally static cylindrical magnetic domains, stabilized by external fields and magnetostatic interactions. In its original theory, the droplet was described as an imminently collapsing bubble stabiliz…
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Magnetic droplets are non-topological magnetodynamical solitons displaying a wide range of complex dynamic phenomena with potential for microwave signal generation. Bubbles, on the other hand, are internally static cylindrical magnetic domains, stabilized by external fields and magnetostatic interactions. In its original theory, the droplet was described as an imminently collapsing bubble stabilized by spin transfer torque and, in its zero-frequency limit, as equivalent to a bubble. Without nanoscale lateral confinement, pinning, or an external applied field, such a nanobubble is unstable, and should collapse. Here, we show that we can freeze dynamic droplets into static nanobubbles by decreasing the magnetic field. While the bubble has virtually the same resistance as the droplet, all signs of low-frequency microwave noise disappear. The transition is fully reversible and the bubble can be thawed back into a droplet if the magnetic field is increased under current. Whereas the droplet collapses without a sustaining current, the bubble is highly stable and remains intact for days without external drive. Electrical measurements are complemented by direct observation using scanning transmission x-ray microscopy, which corroborates the analysis and confirms that the bubble is stabilized by pinning.
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Submitted 30 April, 2021;
originally announced April 2021.
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Room temperature cavity electromechanics in the sideband-resolved regime
Authors:
Anh Tuan Le,
Alexandre Brieusssel,
Eva Maria Weig
Abstract:
We demonstrate a sideband-resolved cavity electromechanical system operating at room temperature. The mechanical resonator, a strongly pre-stressed silicon nitride string, is dielectrically coupled to a three-dimensional microwave cavity made of copper. The electromechanical coupling is characterized by two measurements, the cavity-induced eigenfrequency shift of the mechanical resonator and the o…
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We demonstrate a sideband-resolved cavity electromechanical system operating at room temperature. The mechanical resonator, a strongly pre-stressed silicon nitride string, is dielectrically coupled to a three-dimensional microwave cavity made of copper. The electromechanical coupling is characterized by two measurements, the cavity-induced eigenfrequency shift of the mechanical resonator and the optomechanically induced transparency. While the former is dominated by dielectric effects, the latter reveals a clear signature of the dynamical backaction of the cavity field on the resonator. This unlocks the field of cavity electromechanics for room temperature applications.
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Submitted 9 July, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
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Growth, Electronic Structure and Superconductivity of Ultrathin Epitaxial CoSi2 Films
Authors:
Yuan Fang,
Ding Wang,
Peng Li,
Hang Su,
Tian Le,
Yi Wu,
Guo-Wei Yang,
Hua-Li Zhang,
Zhi-Guang Xiao,
Yan-Qiu Sun,
Si-Yuan Hong,
Yan-Wu Xie,
Huan-Hua Wang,
Chao Cao,
Xin Lu,
Hui-Qiu Yuan,
Yang Liu
Abstract:
We report growth, electronic structure and superconductivity of ultrathin epitaxial CoSi2 films on Si(111). At low coverages, preferred islands with 2, 5 and 6 monolayers height develop, which agrees well with the surface energy calculation. We observe clear quantum well states as a result of electronic confinement and their dispersion agrees well with density functional theory calculations, indic…
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We report growth, electronic structure and superconductivity of ultrathin epitaxial CoSi2 films on Si(111). At low coverages, preferred islands with 2, 5 and 6 monolayers height develop, which agrees well with the surface energy calculation. We observe clear quantum well states as a result of electronic confinement and their dispersion agrees well with density functional theory calculations, indicating weak correlation effect despite strong contributions from Co 3d electrons. Ex-situ transport measurements show that superconductivity persists down to at least 10 monolayers, with reduced Tc but largely enhanced upper critical field. Our study opens up the opportunity to study the interplay between quantum confinement, interfacial symmetry breaking and superconductivity in an epitaxial silicide film, which is technologically relevant in microelectronics.
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Submitted 24 January, 2022; v1 submitted 20 January, 2021;
originally announced January 2021.
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Temperature evolution of quasiparticle dispersion dynamics in semimetallic 1T-TiTe2 via high-resolution angle-resolved photoemission spectroscopy and ultrafast optical pump-probe spectroscopy
Authors:
Shuang-Xing Zhu,
Chen Zhang,
Qi-Yi Wu,
Xiao-Fang Tang,
Hao Liu,
Zi-Teng Liu,
Yang Luo,
Jiao-Jiao Song,
Fan-Ying Wu,
Yin-Zou Zhao,
Shu-Yu Liu,
Tian Le,
Xin Lu,
He Ma,
Kai-Hui Liu,
Ya-Hua Yuan,
Han Huang,
Jun He,
H. Y. Liu,
Yu-Xia Duan,
Jian-Qiao Meng
Abstract:
High-resolution angle-resolved photoemission spectroscopy and ultrafast optical pump-probe spectroscopy were used to study semimetallic 1T - TiTe2 quasiparticle dispersion and dynamics. A kink and a flat band, having the same energy scale and temperature-dependent behaviors along the G-M direction, were detected. Both manifested at low temperatures but blurred as temperature increased. The kink wa…
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High-resolution angle-resolved photoemission spectroscopy and ultrafast optical pump-probe spectroscopy were used to study semimetallic 1T - TiTe2 quasiparticle dispersion and dynamics. A kink and a flat band, having the same energy scale and temperature-dependent behaviors along the G-M direction, were detected. Both manifested at low temperatures but blurred as temperature increased. The kink was formed by an electron-phonon coupling. And the localized flat band might be closely related to an electron-phonon coupling. Ultrafast optical spectroscopy identified multiple distinct time scales in the 10-300 K range. Quantitative analysis of the fastest decay process evidenced a significant lifetime temperature dependence at high temperatures, while this starts to change slowly below ~ 100 K where an anomalous Hall coefficient occurred. At low temperature, a coherent A1g phonon mode with a frequency of ~ 4.36 THz was extracted. Frequency temperature dependence suggests that phonon hardening occurs as temperature falls and anharmonic effects can explain it. Frequency fluence dependence indicates that the phonons soften as fluence increases.
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Submitted 5 March, 2021; v1 submitted 2 December, 2020;
originally announced December 2020.
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Edge Channels of Broken-Symmetry Quantum Hall States in Graphene probed by Atomic Force Microscopy
Authors:
Sungmin Kim,
Johannes Schwenk,
Daniel Walkup,
Yihang Zeng,
Fereshte Ghahari,
Son T. Le,
Marlou R. Slot,
Julian Berwanger,
Steven R. Blankenship,
Kenji Watanabe,
Takashi Taniguchi,
Franz J. Giessibl,
Nikolai B. Zhitenev,
Cory R. Dean,
Joseph A. Stroscio
Abstract:
The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded and brought into focus the concept of topological order in physics. The topologically protected quantum Hall edge states are of crucial importance to the QH effect but have been measured with limited success. The QH edge states in graphene take on an even richer role as graphene is distinguished by its four-fold dege…
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The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded and brought into focus the concept of topological order in physics. The topologically protected quantum Hall edge states are of crucial importance to the QH effect but have been measured with limited success. The QH edge states in graphene take on an even richer role as graphene is distinguished by its four-fold degenerate zero energy Landau level (zLL), where the symmetry is broken by electron interactions on top of lattice-scale potentials but has eluded spatial measurements. In this report, we map the quantum Hall broken-symmetry edge states comprising the graphene zLL at integer filling factors of $ν=0,\pm 1$ across the quantum Hall edge boundary using atomic force microscopy (AFM). Measurements of the chemical potential resolve the energies of the four-fold degenerate zLL as a function of magnetic field and show the interplay of the moiré superlattice potential of the graphene/boron nitride system and spin/valley symmetry-breaking effects in large magnetic fields.
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Submitted 18 June, 2020;
originally announced June 2020.
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Evolution of charge density wave order and superconductivity under pressure in LaPt$_2$Si$_2$
Authors:
B. Shen,
F. Du,
R. Li,
A. Thamizhavel,
M. Smidman,
Z. Y. Nie,
S. S. Luo,
T. Le,
Z. Hossain,
H. Q. Yuan
Abstract:
We report measurements of the electrical resistivity and ac magnetic susceptibility of single crystalline LaPt$_2$Si$_2$ under pressure, in order to investigate the interplay of superconductivity and CDW order. LaPt$_2$Si$_2$ exhibits a first order phase transition from a tetragonal to orthorhombic structure, accompanied by the onset of CDW order below $T_{\rm{CDW}}$ = 76 K, while superconductivit…
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We report measurements of the electrical resistivity and ac magnetic susceptibility of single crystalline LaPt$_2$Si$_2$ under pressure, in order to investigate the interplay of superconductivity and CDW order. LaPt$_2$Si$_2$ exhibits a first order phase transition from a tetragonal to orthorhombic structure, accompanied by the onset of CDW order below $T_{\rm{CDW}}$ = 76 K, while superconductivity occurs at a lower temperature of $T_{\rm{c}}$ = 1.87 K. We find that the application of pressure initially suppresses the CDW transition, but enhances $T_{\rm{c}}$. At pressures above 2.4 GPa, CDW order vanishes, while both $T_{\rm{c}}$ and the resistivity $A$-coefficient reach a maximum value around this pressure. Our results suggest that the occurrence of a superconducting dome can be accounted for within the framework of BCS theory, where there is a maximum in the density of states upon the closure of the CDW gap.
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Submitted 7 April, 2020;
originally announced April 2020.
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Critical Temperature Prediction for a Superconductor: A Variational Bayesian Neural Network Approach
Authors:
Thanh Dung Le,
Rita Noumeir,
Huu Luong Quach,
Ji Hyung Kim,
Jung Ho Kim,
Ho Min Kim
Abstract:
Much research in recent years has focused on using empirical machine learning approaches to extract useful insights on the structure-property relationships of superconductor material. Notably, these approaches are bringing extreme benefits when superconductivity data often come from costly and arduously experimental work. However, this assessment cannot be based solely on an open black-box machine…
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Much research in recent years has focused on using empirical machine learning approaches to extract useful insights on the structure-property relationships of superconductor material. Notably, these approaches are bringing extreme benefits when superconductivity data often come from costly and arduously experimental work. However, this assessment cannot be based solely on an open black-box machine learning, which is not fully interpretable, because it can be counter-intuitive to understand why the model may give an appropriate response to a set of input data for superconductivity characteristic analyses, e.g., critical temperature. The purpose of this study is to describe and examine an alternative approach for predicting the superconducting transition temperature $T_c$ from SuperCon database obtained by Japan's National Institute for Materials Science. We address a generative machine-learning framework called Variational Bayesian Neural Network using superconductors chemical elements and formula to predict $T_c$. In such a context, the importance of the paper in focus is twofold. First, to improve the interpretability, we adopt a variational inference to approximate the distribution in latent parameter space for the generative model. It statistically captures the mutual correlation of superconductor compounds and; then, gives the estimation for the $T_c$. Second, a stochastic optimization algorithm, which embraces a statistical inference named Monte Carlo sampler, is utilized to optimally approximate the proposed inference model, ultimately determine and evaluate the predictive performance.
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Submitted 29 January, 2020;
originally announced February 2020.
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Quantitative study of electronic whispering gallery modes in electrostatic-potential induced circular graphene junctions
Authors:
Thi Lien Le,
Van Lien Nguyen
Abstract:
Electronic Whispering Gallery Modes (EWGMs) have been recently observed in several circular graphene junctions, pn and pp0, created in scanning tunnelling microscope experiments. By computing the local density of states within the Dirac-Weyl formalism for massless fermions we demonstrate that the EWGMs may really be emerged in any type of the electrostatic potential induced circular graphene junct…
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Electronic Whispering Gallery Modes (EWGMs) have been recently observed in several circular graphene junctions, pn and pp0, created in scanning tunnelling microscope experiments. By computing the local density of states within the Dirac-Weyl formalism for massless fermions we demonstrate that the EWGMs may really be emerged in any type of the electrostatic potential induced circular graphene junctions, including uni-junctions (e.g. np- or pp0-junctions) as well as bipolar-junctions (e.g. pnp-heterojunctions). Surprisingly, quantitative analyses show that for all the EWGMs identified (regardless of junction types) the quality (Q) factors seem to be smaller than 100, very small compared to those in ordinary optical whispering gallery modes microresonators, while the corresponding mode radii may tunably be in nanometer-scale. Our theoretical results are in good agreement with existent experimental data, putting a question to the application potential of the EWGMs identified.
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Submitted 23 December, 2019;
originally announced December 2019.
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Impurity Moments Conceal Low-Energy Relaxation of Quantum Spin Liquids
Authors:
A. Pustogow,
T. Le,
H. -H. Wang,
Yongkang Luo,
E. Gati,
H. Schubert,
M. Lang,
S. E. Brown
Abstract:
We scrutinize the magnetic properties of $κ$-(BEDT-TTF)$_2$Hg(SCN)$_2$Cl through its first-order metal-insulator transition at $T_{\rm CO}=30$ K by means of $^1$H nuclear magnetic resonance (NMR). While in the metal we find Fermi-liquid behavior with temperature-independent $(T_1T)^{-1}$, the relaxation rate exhibits a pronounced enhancement when charge order sets in. The NMR spectra remain unchan…
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We scrutinize the magnetic properties of $κ$-(BEDT-TTF)$_2$Hg(SCN)$_2$Cl through its first-order metal-insulator transition at $T_{\rm CO}=30$ K by means of $^1$H nuclear magnetic resonance (NMR). While in the metal we find Fermi-liquid behavior with temperature-independent $(T_1T)^{-1}$, the relaxation rate exhibits a pronounced enhancement when charge order sets in. The NMR spectra remain unchanged through the transition and no magnetic order stabilizes down to 25 mK. Similar to the isostructural spin-liquid candidates $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ and $κ$-(BEDT-TTF)$_2$Ag$_2$(CN)$_3$, $T_1^{-1}$ acquires a dominant maximum (here around 5 K). Field-dependent experiments identify the low-temperature feature as a dynamic inhomogeneity contribution that is typically dominant over the intrinsic relaxation but gets suppressed with magnetic field.
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Submitted 5 November, 2019;
originally announced November 2019.
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Rapid, Quantitative Therapeutic Screening for Alzheimer's Enzymes Enabled by Optimal Signal Transduction with Transistors
Authors:
Son T. Le,
Michelle A. Morris,
Antonio Cardone,
Nicholas B. Guros,
Jeffery B. Klauda,
Brent A. Sperling,
Curt A. Richter,
Harish C. Pant,
Arvind Balijepalli
Abstract:
We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when compared with the open loop operation commonly employed by integrated ion-sensitive field-effect transistors (ISFETs). We leveraged the improved nFET performance to…
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We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when compared with the open loop operation commonly employed by integrated ion-sensitive field-effect transistors (ISFETs). We leveraged the improved nFET performance to measure the change in solution pH arising from the activity of a pathological form of the kinase Cdk5, an enzyme implicated in Alzheimer's disease, and showed quantitative agreement with previous measurements. The improved pH resolution was realized while the devices were operated in a remote sensing configuration with the pH sensing element off-chip and connected electrically to the FET gate terminal. We compared these results with those measured by using a custom-built dual-gate 2D field-effect transistor (dg2DFET) fabricated with 2D semi-conducting MoS2 channels and a moderate device gain, alpha=8. Under identical solution conditions the pH resolution of the nFETs was only 2-fold worse than the dg2DFETs pH resolution of (3.9+/-0.7)x10^-3. Finally, using the nFETs, we demonstrated the effectiveness of a custom polypeptide, p5, as a therapeutic agent in restoring the function of Cdk5. We expect that the straight-forward modifications to commercially sourced nFETs demonstrated here will lower the barrier to widespread adoption of these remote-gate devices and enable sensitive bioanalytical measurements for high throughput screening in drug discovery and precision medicine applications.
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Submitted 21 October, 2019;
originally announced October 2019.
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Thermodynamic dislocation theory for polycrystals under tension/compression
Authors:
Tuan Minh Tran,
Khanh Chau Le,
Thi Hoa Le
Abstract:
Starting from the assumption that all possible orientations of grains are equally probable, we prove that the geometric factor of thermodynamic dislocation theory for polycrystals subjected to axially symmetric tension or compression must be equal to 2. We then use large-scale least-square analysis to identify the physics based parameters of this theory and show that the simulated stress-strain cu…
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Starting from the assumption that all possible orientations of grains are equally probable, we prove that the geometric factor of thermodynamic dislocation theory for polycrystals subjected to axially symmetric tension or compression must be equal to 2. We then use large-scale least-square analysis to identify the physics based parameters of this theory and show that the simulated stress-strain curves for OFHC copper, ARMCO iron and 4340 steel agree well with the experiments of Johnson and Cook.
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Submitted 26 March, 2020; v1 submitted 7 October, 2019;
originally announced October 2019.
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Single full gap with mixed type-I and type-II superconductivity on surface of the type-II Dirac semimetal PdTe2 by point-contact spectroscopy
Authors:
Tian Le,
Lichang Yin,
Zili Feng,
Qi Huang,
Liqiang Che,
Jie Li,
Youguo Shi,
Xin Lu
Abstract:
We report our point-contact spectroscopy (PCS) study on the superconducting state of the type-II Dirac semimetal PdTe$_2$ with a superconducting transition temperature $T\rm_c \sim$ 1.65 K. Both mechanical- and soft- PCS differential conductance curves at 0.3 K show a consistent double-peak structure and they can be perfectly fitted by a single s-wave gap based on the Blonder-Tinkham-Klapwijk mode…
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We report our point-contact spectroscopy (PCS) study on the superconducting state of the type-II Dirac semimetal PdTe$_2$ with a superconducting transition temperature $T\rm_c \sim$ 1.65 K. Both mechanical- and soft- PCS differential conductance curves at 0.3 K show a consistent double-peak structure and they can be perfectly fitted by a single s-wave gap based on the Blonder-Tinkham-Klapwijk model. The gap follows a typical Bardeen-Cooper-Schrieffer temperature behavior, yielding $Δ_0 \sim$ 0.29 meV and 2$Δ_0$/$k\rm_{B}$$T\rm_{c}$ = 4.15 in the strong coupling regime. A sudden suppression of the superconducting gap in magnetic field around $H{\rm_{c1}}$ $\sim$ 130 Oe is observed for most point-contacts on PdTe$_2$, characteristic of a first-order transition for type-I superconductor in field. However, for other contacts, a smooth evolution of the PCS conductance persists up to $H{\rm_{c2}}$ $\sim$ 600 Oe, signaling a local type-II superconductivity. The observed admixture of type-I and type-II superconductivity can possibly arise from an inhomogeneous electron mean free path on the surface of PdTe$_2$ due to its topological surface states.
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Submitted 1 June, 2019;
originally announced June 2019.
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Evidence for nematic superconductivity of topological surface states in PbTaSe2
Authors:
Tian Le,
Yue Sun,
Hui-Ke Jin,
Liqiang Che,
Lichang Yin,
Jie Li,
G. M. Pang,
C. Q. Xu,
L. X. Zhao,
S. Kittaka,
T. Sakakibara,
K. Machida,
R. Sankar,
H. Q. Yuan,
G. F. Chen,
Xiaofeng Xu,
Shiyan Li,
Yi Zhou,
Xin Lu
Abstract:
Spontaneous symmetry breaking has been a paradigm to describe the phase transitions in condensed matter physics. In addition to the continuous electromagnetic gauge symmetry, an unconventional superconductor can break discrete symmetries simultaneously, such as time reversal and lattice rotational symmetry. In this work we report a characteristic in-plane 2-fold behaviour of the resistive upper cr…
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Spontaneous symmetry breaking has been a paradigm to describe the phase transitions in condensed matter physics. In addition to the continuous electromagnetic gauge symmetry, an unconventional superconductor can break discrete symmetries simultaneously, such as time reversal and lattice rotational symmetry. In this work we report a characteristic in-plane 2-fold behaviour of the resistive upper critical field and point-contact spectra on the superconducting semimetal PbTaSe2 with topological nodal-rings, despite its hexagonal lattice symmetry (or D_3h in bulk while C_3v on surface, to be precise). However, we do not observe any lattice rotational symmetry breaking signal from field-angle-dependent specific heat. It is worth noting that such surface-only electronic nematicity is in sharp contrast to the observation in the topological superconductor candidate, CuxBi2Se3, where the nematicity occurs in various bulk measurements. In combination with theory, superconducting nematicity is likely to emerge from the topological surface states of PbTaSe2, rather than the proximity effect. The issue of time reversal symmetry breaking is also addressed. Thus, our results on PbTaSe2 shed new light on possible routes to realize nematic superconductivity with nontrivial topology.
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Submitted 27 May, 2019;
originally announced May 2019.
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Strong equilibration of Landau levels edge-states at the graphene edge
Authors:
Son T. Le,
Joseph A. Hagmann,
Nikolai Klimov,
David Newell,
Ji Ung Lee,
Jun Yan,
Curt A. Richter
Abstract:
We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geometry allows the interactions between edge-states to be probed at both electrostatic edges defined by pn junctions and at the graphene physical edge. Me…
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We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geometry allows the interactions between edge-states to be probed at both electrostatic edges defined by pn junctions and at the graphene physical edge. Measurements show that while the lowest LL edge-state is decoupled from the other LLs along the electrostatic junction, all the edge-states strongly equilibrate at the graphene physical edge despite the relatively short distance that they travel along the edge in our device. These findings are fundamental for the engineering of future high-performance graphene field-effect transistors based upon electron optics.
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Submitted 9 April, 2019;
originally announced April 2019.
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Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
Authors:
Nicholas B. Guros,
Son T. Le,
Siyuan Zhang,
Brent A. Sperling,
Jeffery B. Klauda,
Curt A. Richter,
Arvind Balijepalli
Abstract:
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfaces of the 2D material and the gate oxide must be overcome to realize robust devices with high yield. Here, we demonstrate an optimized process to rea…
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Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfaces of the 2D material and the gate oxide must be overcome to realize robust devices with high yield. Here, we demonstrate an optimized process to realize high-performance field-effect transistor (FET) arrays from large-area (~5000 um2) monolayer MoS2 with a yield of 85 %. A central element of this process is an exposed material forming gas anneal (EM-FGA) that results in uniform FET performance metrics (i.e., field-effect mobilities, threshold voltages, and contact performance). Complementary analytical measurements show that the EM-FGA process reduces deleterious channel doping effects by decreasing organic contamination, while also reducing the prevalence of insulating molybdenum oxide, effectively improving the MoS2-gate oxide interface. The uniform FET performance metrics and high device yield achieved by applying the EM-FGA technique on large-area 2D material flakes will help advance the fabrication of complex 2D nanoelectronics devices and demonstrates the need for improved engineering of the 2D material-gate oxide interface.
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Submitted 3 April, 2019;
originally announced April 2019.
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Tailoring Vanadium Dioxide Film Orientation using Nanosheets: A Combined Microscopy, Diffraction, Transport and Soft X-ray in Transmission Study
Authors:
Phu Tran Phong Le,
Kevin Hofhuis,
Abhi Rana,
Mark Huijben,
Hans Hilgenkamp,
G. Rijnders,
A. ten Elshof,
Gertjan Koster,
Nicolas Gauquelin,
Gunnar Lumbeeck,
Christian Schlüßler-Langeheine,
Horia Popescu,
F. Fortuna,
Steef Smit,
Xanthe H. Verbeek,
Georgios Araizi-Kanoutas,
Shrawan Mishra,
Igor Vakivskyi,
Hermann A. Durr,
Mark S. Golden
Abstract:
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R…
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VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R and (-402)M1/(002)R by coating the bulk substrates with Ti0.87O2 and NbWO6 nanosheets, respectively, prior to VO2 growth. Temperature dependent X-ray diffraction and automated crystal orientation mapping in microprobe TEM mode (ACOM-TEM) characterized the high phase purity, the crystallographic and orientational properties of the VO2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO2 orientations on a single substrate is demonstrated using VO2 grown on lithographically-patterned lines of Ti0.87O2 and NbWO6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO2 films for advanced lensless imaging of the metal-insulator transition using coherent soft X-rays is discussed.
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Submitted 25 January, 2019;
originally announced January 2019.
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Tuning spin torque nano-oscillator nonlinearity using He+ irradiation
Authors:
Sheng Jiang,
Roman Khymyn,
Sunjae Chung,
Quang Tuan Le,
Liza Herrera Diez,
Afshin Houshang,
Mohammad Zahedinejad,
Dafine Ravelosona,
Johan Åkerman
Abstract:
We use He$^+$ irradiation to tune the nonlinearity, $\mathcal{N}$, of all-perpendicular spin-torque nano-oscillators (STNOs) using the He$^+$ fluence-dependent perpendicular magnetic anisotropy (PMA) of the [Co/Ni] free layer. Employing fluences from 6 to 20$\times10^{14}$~He$^{+}$/cm$^{2}$, we are able to tune $\mathcal{N}$ in an in-plane field from strongly positive to moderately negative. As th…
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We use He$^+$ irradiation to tune the nonlinearity, $\mathcal{N}$, of all-perpendicular spin-torque nano-oscillators (STNOs) using the He$^+$ fluence-dependent perpendicular magnetic anisotropy (PMA) of the [Co/Ni] free layer. Employing fluences from 6 to 20$\times10^{14}$~He$^{+}$/cm$^{2}$, we are able to tune $\mathcal{N}$ in an in-plane field from strongly positive to moderately negative. As the STNO microwave signal properties are mainly governed by $\mathcal{N}$, we can in this way directly control the threshold current, the current tunability of the frequency, and the STNO linewidth. In particular, we can dramatically improve the latter by more than two orders of magnitude. Our results are in good agreement with the theory for nonlinear auto-oscillators, confirm theoretical predictions of the role of nonlinearity, and demonstrate a straightforward path towards improving the microwave properties of STNOs.
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Submitted 20 December, 2018;
originally announced December 2018.
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Large-Scale Conformal Growth of Atomic-Thick MoS2 for Highly Efficient Photocurrent Generation
Authors:
Tri Khoa Nguyen,
Anh Duc Nguyen,
Chinh Tam Le,
Farman Ullah,
Kyo-in Koo,
Eunah Kim,
Dong-Wook Kim,
Joon I. Jang,
Yong Soo Kim
Abstract:
Controlling the interconnection of neighboring seeds (nanoflakes) to full coverage of the textured substrate is the main challenge for the large-scale conformal growth of atomic-thick transition metal dichalcogenides by chemical vapor deposition. Herein, we report on a controllable method for the conformal growth of monolayer MoS2 on not only planar but also micro- and nano-rugged SiO2/Si substrat…
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Controlling the interconnection of neighboring seeds (nanoflakes) to full coverage of the textured substrate is the main challenge for the large-scale conformal growth of atomic-thick transition metal dichalcogenides by chemical vapor deposition. Herein, we report on a controllable method for the conformal growth of monolayer MoS2 on not only planar but also micro- and nano-rugged SiO2/Si substrates via metal-organic chemical vapor deposition. The continuity of monolayer MoS2 on the rugged surface is evidenced by scanning electron microscopy, cross-section high-resolution transmission electron microscopy, photoluminescence (PL) mapping, and Raman mapping. Interestingly, the photo-responsivity (~254.5 mA/W) of as-grown MoS2 on the nano-rugged substrate exhibits 59 times higher than that of the planar sample (4.3 mA/W) under a small applied bias of 0.1 V. This value is record high when compared with all previous MoS2-based photocurrent generation under low or zero bias. Such a large enhancement in the photo-responsivity arises from a large active area for light-matter interaction and local strain for PL quenching, where the latter effect is the key factor and unique in the conformally grown monolayer on the nano-rugged surface. The result is a step toward the batch fabrication of modern atomic-thick optoelectronic devices.
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Submitted 27 July, 2018;
originally announced July 2018.
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Tuning the magnetodynamic properties of all-perpendicular spin valves using He+ irradiation
Authors:
S. Jiang,
S. Chung,
L. Herrera Diez,
T. Q. Le,
F. Magnusson,
D. Ravelosona,
J. Åkerman
Abstract:
Using He+ ion irradiation, we demonstrate how the magnetodynamic properties of both ferromagnetic layers in all-perpendicular [Co/Pd]/Cu/[Co/Ni] spin valves can be tuned by varying the He+ ion fluence. As the perpendicular magnetic anisotropy of both layers is gradually reduced by the irradiation, different magnetic configurations can be achieved from all-perpendicular, through orthogonal, to all…
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Using He+ ion irradiation, we demonstrate how the magnetodynamic properties of both ferromagnetic layers in all-perpendicular [Co/Pd]/Cu/[Co/Ni] spin valves can be tuned by varying the He+ ion fluence. As the perpendicular magnetic anisotropy of both layers is gradually reduced by the irradiation, different magnetic configurations can be achieved from all-perpendicular, through orthogonal, to all in-plane. In addition, both the magnetic damping and the inhomogeneous broadening of the Co/Ni layer improve substantially with increasing fluence. GMR of the spin valve is negatively affected and decreases linearly from an original value of 1.14% to 0.4% at the maximum fluence of 50*10^14 He+/cm^2.
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Submitted 2 February, 2018;
originally announced February 2018.
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Spin-chain model of a many-body quantum battery
Authors:
Thao P. Le,
Jesper Levinsen,
Kavan Modi,
Meera Parish,
Felix A. Pollock
Abstract:
Recently, it has been shown that energy can be deposited on a collection of quantum systems at a rate that scales super-extensively. Some of these schemes for `quantum batteries' rely on the use of global many-body interactions that take the batteries through a correlated short cut in state space. Here, we extend the notion of a quantum battery from a collection of a priori isolated systems to a m…
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Recently, it has been shown that energy can be deposited on a collection of quantum systems at a rate that scales super-extensively. Some of these schemes for `quantum batteries' rely on the use of global many-body interactions that take the batteries through a correlated short cut in state space. Here, we extend the notion of a quantum battery from a collection of a priori isolated systems to a many-body quantum system with intrinsic interactions. Specifically, we consider a one-dimensional spin chain with physically realistic two-body interactions. We find that the spin-spin interactions can yield an advantage in charging power over the non-interacting case, and we demonstrate that this advantage can grow super-extensively when the interactions are long ranged. However, we show that, unlike in previous work, this advantage is a mean-field interaction effect that does not involve correlations and that relies on the interactions being intrinsic to the battery.
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Submitted 10 December, 2017;
originally announced December 2017.