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Realizing Repeated Quantum Error Correction in a Distance-Three Surface Code
Authors:
Sebastian Krinner,
Nathan Lacroix,
Ants Remm,
Agustin Di Paolo,
Elie Genois,
Catherine Leroux,
Christoph Hellings,
Stefania Lazar,
Francois Swiadek,
Johannes Herrmann,
Graham J. Norris,
Christian Kraglund Andersen,
Markus Müller,
Alexandre Blais,
Christopher Eichler,
Andreas Wallraff
Abstract:
Quantum computers hold the promise of solving computational problems which are intractable using conventional methods. For fault-tolerant operation quantum computers must correct errors occurring due to unavoidable decoherence and limited control accuracy. Here, we demonstrate quantum error correction using the surface code, which is known for its exceptionally high tolerance to errors. Using 17 p…
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Quantum computers hold the promise of solving computational problems which are intractable using conventional methods. For fault-tolerant operation quantum computers must correct errors occurring due to unavoidable decoherence and limited control accuracy. Here, we demonstrate quantum error correction using the surface code, which is known for its exceptionally high tolerance to errors. Using 17 physical qubits in a superconducting circuit we encode quantum information in a distance-three logical qubit building up on recent distance-two error detection experiments. In an error correction cycle taking only $1.1\,μ$s, we demonstrate the preservation of four cardinal states of the logical qubit. Repeatedly executing the cycle, we measure and decode both bit- and phase-flip error syndromes using a minimum-weight perfect-matching algorithm in an error-model-free approach and apply corrections in postprocessing. We find a low error probability of $3\,\%$ per cycle when rejecting experimental runs in which leakage is detected. The measured characteristics of our device agree well with a numerical model. Our demonstration of repeated, fast and high-performance quantum error correction cycles, together with recent advances in ion traps, support our understanding that fault-tolerant quantum computation will be practically realizable.
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Submitted 7 December, 2021;
originally announced December 2021.
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Benchmarking Coherent Errors in Controlled-Phase Gates due to Spectator Qubits
Authors:
S. Krinner,
S. Lazar,
A. Remm,
C. K. Andersen,
N. Lacroix,
G. J. Norris,
C. Hellings,
M. Gabureac,
C. Eichler,
A. Wallraff
Abstract:
A major challenge in operating multi-qubit quantum processors is to mitigate multi-qubit coherent errors. For superconducting circuits, besides crosstalk originating from imperfect isolation of control lines, dispersive coupling between qubits is a major source of multi-qubit coherent errors. We benchmark phase errors in a controlled-phase gate due to dispersive coupling of either of the qubits in…
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A major challenge in operating multi-qubit quantum processors is to mitigate multi-qubit coherent errors. For superconducting circuits, besides crosstalk originating from imperfect isolation of control lines, dispersive coupling between qubits is a major source of multi-qubit coherent errors. We benchmark phase errors in a controlled-phase gate due to dispersive coupling of either of the qubits involved in the gate to one or more spectator qubits. We measure the associated gate infidelity using quantum process tomography. In addition, we point out that, due to coupling of the gate qubits to a non-computational state during the gate, two-qubit conditional phase errors are enhanced. Our work is important for understanding limits to the fidelity of two-qubit gates with finite on/off ratio in multi-qubit settings.
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Submitted 12 May, 2020;
originally announced May 2020.
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Resolving hydrogen atoms at metal-metal hydride interfaces
Authors:
Sytze de Graaf,
Jamo Momand,
Christoph Mitterbauer,
Sorin Lazar,
Bart J. Kooi
Abstract:
Hydrogen as a fuel can be stored safely with high volumetric density in metals. It can, however, also be detrimental to metals causing embrittlement. Understanding fundamental behavior of hydrogen at atomic scale is key to improve the properties of metal-metal hydride systems. However, currently, there is no robust technique capable of visualizing hydrogen atoms. Here, we demonstrate that hydrogen…
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Hydrogen as a fuel can be stored safely with high volumetric density in metals. It can, however, also be detrimental to metals causing embrittlement. Understanding fundamental behavior of hydrogen at atomic scale is key to improve the properties of metal-metal hydride systems. However, currently, there is no robust technique capable of visualizing hydrogen atoms. Here, we demonstrate that hydrogen atoms can be imaged unprecedentedly with integrated differential phase contrast, a recently developed technique performed in a scanning transmission electron microscope. Images of the titanium-titanium monohydride interface reveal remarkable stability of the hydride phase, originating from the interplay between compressive stress and interfacial coherence. We also uncovered, thirty years after three models were proposed, which one describes the position of the hydrogen atoms with respect to the interface. Our work enables novel research on hydrides and is extendable to all materials containing light and heavy elements, including oxides, nitrides, carbides and borides.
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Submitted 20 June, 2019; v1 submitted 21 December, 2018;
originally announced December 2018.
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Highly-Oriented Atomically Thin Ambipolar MoSe$_2$ Grown by Molecular Beam Epitaxy
Authors:
Ming-Wei Chen,
Dmitry Ovchinnikov,
Sorin Lazar,
Michele Pizzochero,
Michael Brian Whitwick,
Alessandro Surrente,
Michał Baranowski,
Oriol Lopez Sanchez,
Philippe Gillet,
Paulina Plochocka,
Oleg V. Yazyev,
Andras Kis
Abstract:
Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin Mo…
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Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin MoSe$_2$ on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe$_2$. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film.
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Submitted 30 May, 2017;
originally announced May 2017.
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Real-space mapping of electronic orbitals
Authors:
Stefan Löffler,
Matthieu Bugnet,
Nicolas Gauquelin,
Sorin Lazar,
Elias Assmann,
Karsten Held,
Gianluigi A. Botton,
Peter Schattschneider
Abstract:
Electronic states are responsible for most material properties, including chemical bonds, electrical and thermal conductivity, as well as optical and magnetic properties. Experimentally, however, they remain mostly elusive. Here, we report the real-space mapping of selected transitions between p and d states on the Ångström scale in bulk rutile (TiO2) using electron energy-loss spectrometry (EELS)…
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Electronic states are responsible for most material properties, including chemical bonds, electrical and thermal conductivity, as well as optical and magnetic properties. Experimentally, however, they remain mostly elusive. Here, we report the real-space mapping of selected transitions between p and d states on the Ångström scale in bulk rutile (TiO2) using electron energy-loss spectrometry (EELS), revealing information on individual bonds between atoms. On the one hand, this enables the experimental verification of theoretical predictions about electronic states. On the other hand, it paves the way for directly investigating electronic states under conditions that are at the limit of the current capabilities of numerical simulations such as, e.g., the electronic states at defects, interfaces, and quantum dots.
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Submitted 27 June, 2016;
originally announced June 2016.
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Atomic scale electron vortices for nanoresearch
Authors:
J. Verbeeck,
P. Schattschneider,
S. Lazar,
M. Stöger-Pollach,
S. Löffler,
A. Steiger-Thirsfeld,
G. Van Tendeloo
Abstract:
Electron vortex beams were only recently discovered and their potential as a probe for magnetism in materials was shown. Here we demonstrate a new method to produce electron vortex beams with a diameter of less than 1.2 Å. This unique way to prepare free electrons to a state resembling atomic orbitals is fascinating from a fundamental physics point of view and opens the road for magnetic mapping w…
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Electron vortex beams were only recently discovered and their potential as a probe for magnetism in materials was shown. Here we demonstrate a new method to produce electron vortex beams with a diameter of less than 1.2 Å. This unique way to prepare free electrons to a state resembling atomic orbitals is fascinating from a fundamental physics point of view and opens the road for magnetic mapping with atomic resolution in an electron microscope.
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Submitted 28 May, 2014;
originally announced May 2014.
