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Emergence of flat bands in the quasicrystal limit of boron nitride twisted bilayers
Authors:
Lorenzo Sponza,
Van Binh Vu,
Elisa Serrano Richaud,
Hakim Amara,
Sylvain Latil
Abstract:
We investigate the electronic structure and the optical absorption onset of close-to-30\degree twisted hexagonal boron nitride bilayers. Our study is carried out with a purposely developed tight-binding model validated against DFT simulations. We demonstrate that approaching 30\degree (quasicrystal limit), all bilayers sharing the same moiré supercell develop identical band structures, irrespectiv…
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We investigate the electronic structure and the optical absorption onset of close-to-30\degree twisted hexagonal boron nitride bilayers. Our study is carried out with a purposely developed tight-binding model validated against DFT simulations. We demonstrate that approaching 30\degree (quasicrystal limit), all bilayers sharing the same moiré supercell develop identical band structures, irrespective of their stacking sequence. This band structure features a bundle of flat bands laying slightly above the bottom conduction state which is responsible for an intense peak at the onset of the absorption spectrum. These results suggest the presence of strong, stable and stacking-independent excitons in boron nitride 30\degree-twisted bilayers. By carefully analyzing the electronic structure and its spatial distribution, we elucidate the origin of these states as moiré-induced K-valley scattering due to interlayer B$-$B coupling. We take advantage of the the physical transparency of the tight-binding parameters to derive a simple triangular model based on the B sublattice that accurately describes the emergence of the bundle. Being our conclusions very general, we predict that a similar bundle should emerge in other close-to-30{\degree} bilayers, like transition metal dichalcogenides, shedding new light on the unique potential of 2D materials.
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Submitted 26 February, 2024; v1 submitted 4 October, 2023;
originally announced October 2023.
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Gap engineering and wave function symmetry in C and BN armchair nanoribbons
Authors:
Elisa Serrano Richaud,
Sylvain Latil,
Hakim Amara,
Lorenzo Sponza
Abstract:
Many are the ways of engineering the band gap of nanoribbons including application of stress, electric field and functionalization of the edges. In this article, we investigate separately the effects of these methods on armchair graphene and boron nitride nanoribbons. By means of density functional theory calculations, we show that, despite their similar structure, the two materials respond in opp…
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Many are the ways of engineering the band gap of nanoribbons including application of stress, electric field and functionalization of the edges. In this article, we investigate separately the effects of these methods on armchair graphene and boron nitride nanoribbons. By means of density functional theory calculations, we show that, despite their similar structure, the two materials respond in opposite ways to these stimuli. By treating them as perturbations of a heteroatomic ladder model based on the tight-binding formalism, we connect the two behaviours to the different symmetries of the top valence and bottom conduction wave functions. These results indicate that opposite and complementary strategies are preferable to engineer the gapwidth of armchair graphene and boron nitride nanoribbons.
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Submitted 13 March, 2024; v1 submitted 28 February, 2023;
originally announced February 2023.
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Structural classification of boron nitride twisted bilayers and ab initio investigation of their stacking-dependent electronic structure
Authors:
Sylvain Latil,
Hakim Amara,
Lorenzo Sponza
Abstract:
Since the discovery of superconductive twisted bilayer graphene which initiated the field of twistronics, moiré systems have not ceased to exhibit fascinating properties. We demonstrate that in boron nitride twisted bilayers, for a given moiré periodicity, there are five different stackings which preserve the monolayer hexagonal symmetry (i.e. the invariance upon rotations of 120$^\circ$) and not…
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Since the discovery of superconductive twisted bilayer graphene which initiated the field of twistronics, moiré systems have not ceased to exhibit fascinating properties. We demonstrate that in boron nitride twisted bilayers, for a given moiré periodicity, there are five different stackings which preserve the monolayer hexagonal symmetry (i.e. the invariance upon rotations of 120$^\circ$) and not only two as always discussed in literature. We introduce some definitions and a nomenclature that identify unambiguously the twist angle and the stacking sequence of any hexagonal bilayer with order-3 rotation symmetry. Moreover, we employ density functional theory to study the evolution of the band structure as a function of the twist angle for each of the five stacking sequences of boron nitride bilayers. We show that the gap is indirect at any angle and in any stacking, and identify features that are conserved within the same stacking sequence irrespective of the angle of twist.
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Submitted 17 November, 2022; v1 submitted 12 June, 2022;
originally announced June 2022.
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Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation
Authors:
Lorenzo Sponza,
Hakim Amara,
Claudio Attaccalite,
Sylvain Latil,
Thomas Galvani,
Fulvio Paleari,
Ludger Wirtz,
François Ducastelle
Abstract:
We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are…
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We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are carried out on the level of \textit{ab initio} many-body perturbation theory (GW and Bethe Salpeter equation) and by means of an appropriate tight-binding model. We confirm the change from direct to indirect electronic gap when going from single layer to bulk systems and we give a detailed account of its origin by comparing the effect of different stacking sequences. We emphasize that the inclusion of the electron-hole interaction is crucial for the correct description of the momentum-dependent dispersion of the excitations. It flattens the exciton dispersion with respect to the one obtained from the dispersion of excitations in the independent-particle picture. In the AB stacking this effect is particularly important as the lowest-lying exciton is predicted to be direct despite the indirect electronic band gap.
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Submitted 4 July, 2018; v1 submitted 16 June, 2018;
originally announced June 2018.
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Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride
Authors:
Claudio Attaccalite,
Myrta Grüning,
Hakim Amara,
Sylvain Latil,
François Ducastelle
Abstract:
We calculate the two-photon absorption in bulk and single layer hexagonal boron nitride (hBN) both by an ab-initio real-time Bethe-Salpeter approach and by a the real-space solution of the excitonic problem in tight-binding formalism. The two-photon absorption obeys different selection rules from those governing linear optics and therefore provides complementary information on the electronic excit…
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We calculate the two-photon absorption in bulk and single layer hexagonal boron nitride (hBN) both by an ab-initio real-time Bethe-Salpeter approach and by a the real-space solution of the excitonic problem in tight-binding formalism. The two-photon absorption obeys different selection rules from those governing linear optics and therefore provides complementary information on the electronic excitations of hBN. Combining the results from the simulations with a symmetry analysis we show that two-photon absorption is able to probe the lowest energy $1s$ states in the single layer hBN and the lowest dark degenerate dark states of bulk hBN. This deviation from the "usual" selection rules based on the continuous hydrogenic model is explained within a simple model that accounts for the crystalline symmetry. The same model can be applied to other two-dimensional materials with the same point-group symmetry, such as the transition metal chalcogenides. We also discuss the selection rules related to the inversion symmetry of the bulk layer stacking.
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Submitted 29 March, 2018;
originally announced March 2018.
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Excitons in boron nitride single layer
Authors:
Thomas Galvani,
Fulvio Paleari,
Henrique Miranda,
Alejandro Molina-Sánchez,
Ludger Wirtz,
Sylvain Latil,
Hakim Amara,
François Ducastelle
Abstract:
Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining \textit{ab initio} calculations and a tight-binding-Wannier analysis in…
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Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining \textit{ab initio} calculations and a tight-binding-Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence ($π$) and conduction ($π^*$) bands the tight-binding analysis becomes quasi quantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground state exciton is not a genuine Frenkel exciton, but a very localized "tightly-bound" one. The other ones are similar to those found in transition metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.
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Submitted 31 May, 2016;
originally announced May 2016.
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Effect of Oxygen Adsorption on the Local Properties of Epitaxial Graphene on SiC (0001)
Authors:
C. Mathieu,
B. Lalmi,
T. O. Mentes,
E. Pallecchi,
A. Locatelli,
S. Latil,
R. Belkhou,
A. Ouerghi
Abstract:
The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidati…
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The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidation. The monitoring of the oxidation process demonstrates that the oxygen saturates the Si dangling bonds, breaks some Si-C bonds at the interface and intercalates the graphene layer. Accurate control over the oxidation parameters enables us to tune the charge density modulation in the layer.
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Submitted 12 June, 2012;
originally announced June 2012.
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Massless Fermions in multilayer graphitic systems with misoriented layers
Authors:
Sylvain Latil,
Vincent Meunier,
Luc Henrard
Abstract:
We examine how the misorientation of a few stacked graphene layers affects the electronic structure of carbon nanosystems. We present {\it ab initio} calculations on bi- and trilayer systems to demonstrate that the massless Fermion behavior typical of single layered graphene is also found in incommensurate multilayered graphitic systems. We also investigate the consequences of this property on e…
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We examine how the misorientation of a few stacked graphene layers affects the electronic structure of carbon nanosystems. We present {\it ab initio} calculations on bi- and trilayer systems to demonstrate that the massless Fermion behavior typical of single layered graphene is also found in incommensurate multilayered graphitic systems. We also investigate the consequences of this property on experimental fingerprints, such as Raman spectroscopy and scanning tunneling microscopy (STM). Our simulations reveal that STM images of turbostratic few layer graphite are sensitive to the layer arrangement. We also predict that resonant raman signal of graphitic samples are more sensitive to the orientation of the layers than to their number.
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Submitted 14 September, 2007;
originally announced September 2007.
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Magnetically Induced Field Effect in Carbon Nanotube Devices
Authors:
Georgy Fedorov,
Alexander Tselev,
David Jimenez,
Sylvain Latil,
Nikolay G. Kalugin,
Paola Barbara,
Dmitry Smirnov,
Stephane Roche
Abstract:
Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at th…
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Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from temperature-dependent magnetoconductance measurements.
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Submitted 10 May, 2007;
originally announced May 2007.
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Scanning tunneling microscopy simulations of poly(3-dodecylthiophene) chains adsorbed on highly oriented pyrolytic graphite
Authors:
M. Dubois,
S. Latil,
L. Scifo,
B. Grevin,
A. Rubio
Abstract:
We report on a novel scheme to perform efficient simulations of Scanning Tunneling Microscopy (STM) of molecules weakly bonded to surfaces. Calculations are based on a tight binding (TB) technique including self-consistency for the molecule to predict STM imaging and spectroscopy. To palliate the lack of self-consistency in the tunneling current calculation, we performed first principles density…
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We report on a novel scheme to perform efficient simulations of Scanning Tunneling Microscopy (STM) of molecules weakly bonded to surfaces. Calculations are based on a tight binding (TB) technique including self-consistency for the molecule to predict STM imaging and spectroscopy. To palliate the lack of self-consistency in the tunneling current calculation, we performed first principles density-functional calculations to extract the geometrical and electronic properties of the system. In this way, we can include, in the TB scheme, the effects of structural relaxation upon adsorption on the electronic structure of the molecule. This approach is applied to the study of regioregular poly(3-dodecylthiophene) (P3DDT) polymer chains adsorbed on highly oriented pyrolytic graphite (HOPG). Results of spectroscopic calculations are discussed and compared with recently obtained experimental dat
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Submitted 23 January, 2006;
originally announced January 2006.
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Persistent currents in carbon nanotubes based rings
Authors:
S. Latil,
S. Roche,
A. Rubio
Abstract:
Persistent currents in rings constructed from carbon nanotubes are investigated theoretically. After studying the contribution of finite temperature or quenched disorder on covalent rings, the complexity due to the bundle packing is addressed. The case of interacting nanotori and self-interacting coiled nanotubes are analyzed in details in relation with experiments.
Persistent currents in rings constructed from carbon nanotubes are investigated theoretically. After studying the contribution of finite temperature or quenched disorder on covalent rings, the complexity due to the bundle packing is addressed. The case of interacting nanotori and self-interacting coiled nanotubes are analyzed in details in relation with experiments.
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Submitted 24 March, 2003;
originally announced March 2003.
