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Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers
Authors:
Danae Katrisioti,
Peter R. Wiecha,
Aurélien Cuche,
Sotiris Psilodimitrakopoulos,
Guilhem Larrieu,
Jonas Müller,
Vincent Larrey,
Bernhard Urbaszek,
Xavier Marie,
Emmanuel Stratakis,
George Kioseoglou,
Vincent Paillard,
Jean-Marie Poumirol,
Ioannis Paradisanos
Abstract:
Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emissi…
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Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a three-fold enhancement in photoluminescence and an excitation-wavelength-dependent emission that aligns with Mie-resonant modes. Raman spectroscopy reveals an up to 8-fold enhancement in the vibrational modes of MoS2, while second-harmonic generation exhibits a 20 to 30-fold increase in efficiency, closely correlating with the presence of the underlying nanoantennas. Our experiments and simulations quantify the tunable benefits of the near-field interactions, taking into account thin-film interference and strain-induced effects. Our findings present dielectric nanoantennas as a promising platform for tailoring linear and nonlinear optical properties in 2D materials, with potential applications in nanophotonic devices and integrated photonics.
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Submitted 4 April, 2025;
originally announced April 2025.
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Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
Authors:
Damiano Ricciarelli,
Jonas Müller,
Guilhem Larrieu,
Ioannis Deretzis,
Gaetano Calogero,
Enrico Martello,
Giuseppe Fisicaro,
Jean-Michel Hartmann,
Sébastien Kerdilès,
Mathieu Opprecht,
Antonio Massimiliano Mio,
Richard Daubriac,
Fuccio Cristiano,
Antonino La Magna
Abstract:
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decade…
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Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities and bandgap. In this framework, they can for instance boost the performances of p-type MOSFETs but also enable near infra-red absorption and emission for applications in photo-detection and photonics. Laser melting on such type of layers, however results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. In our study, we investigate the laser melting of ~700 nm thick relaxed silicon-germanium samples coated with SiO2 nano-arrays, observing the resulting material to maintain an unaltered lattice. We found the geometrical parameters of the silicon oxide having an impact on the thermal budget samples see, influencing melt threshold, melt depth and germanium distribution.
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Submitted 6 May, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Authors:
Ana Estrada-Real,
Ioannis Paradisanos,
Peter R. Wiecha,
Jean-Marie Poumirol,
Aurelien Cuche,
Gonzague Agez,
Delphine Lagarde,
Xavier Marie,
Vincent Larrey,
Jonas Müller,
Guilhem Larrieu,
Vincent Paillard,
Bernhard Urbaszek
Abstract:
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling betw…
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Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment.
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Submitted 25 October, 2022;
originally announced October 2022.
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Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics
Authors:
Jean-Marie Poumirol,
Clément Majorel,
Nicolas Chery,
Christian Girard,
Peter R. Wiecha,
Nicolas Mallet,
Guilhem Larrieu,
Fuccio Cristiano,
Richard Monflier,
Anne-Sophie Royet,
Pablo Acosta Alba,
Sébastien Kerdiles,
Vincent Paillard,
Caroline Bonafos
Abstract:
We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $μ$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasur…
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We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $μ$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasurfaces employing nano-structures with dimensions as low as 100\,nm in diameter and 23 nm in height. Our numerical simulations show an excellent agreement with the experimental data and provide physical insights on the impact of the nanostructure shape as well as of near-field effects on the optical properties of the metasurface. Our results open highly promising perspectives for integrated all-silicon-based plasmonic devices for instance for chemical or biological sensing or for thermal imaging.
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Submitted 9 March, 2021; v1 submitted 16 November, 2020;
originally announced November 2020.
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Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas
Authors:
Jean-Marie Poumirol,
Ioannis Paradisanos,
Shivangi Shree,
Gonzague Agez,
Xavier Marie,
Cedric Robert,
Nicolas Mallet,
Peter R. Wiecha,
Guilhem Larrieu,
Vincent Larrey,
Frank Fournel,
Kenji Watanabe,
Takashi Taniguchi,
Aurelien Cuche,
Vincent Paillard,
Bernhard Urbaszek
Abstract:
Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence mapping experim…
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Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence mapping experiments. By varying TMD material (WSe2 versus MoSe2) transferred on silicon nanoresonators with various designs (planarized versus non-planarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2 we address the effects of Mie Resonances and strain in the monolayer. For WSe2 an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room temperature applications.
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Submitted 24 July, 2020;
originally announced July 2020.
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Nanostructure engineering of epitaxial piezoelectric α-quartz thin films on silicon
Authors:
Q. Zhang,
D. Sánchez-garcia,
R. Desgarceaux,
A. Gomez,
P. Escofet-Majora,
J. Oró-soler,
J. Gazquez,
G. Larrieu,
B. Charlot,
M. Gich,
A. Carretero-Genevrier
Abstract:
The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we report unprecedented large-scale fabrication of ordered arrays of piezoelectric epitaxial quartz nanostructures on silicon substrates by the combination of soft-chemistry and three cost effective lithographic techniques: (i)…
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The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we report unprecedented large-scale fabrication of ordered arrays of piezoelectric epitaxial quartz nanostructures on silicon substrates by the combination of soft-chemistry and three cost effective lithographic techniques: (i) laser transfer lithography, (ii) soft nanoimprint lithography on Sr-doped SiO2 sol-gel thin films and (iii) self-assembled SrCO3 nanoparticles reactive nanomasks. Epitaxial α-quartz nanopillars with different diameters (down to 50 nm) and heights (up to 2000 nm) were obtained for the first time. This work proves the control over the shape, micro- and nano-patterning of quartz thin films while preserving its crystallinity, texture and piezoelectricity. This work opens up the opportunity to fabricate new high frequency resonators and high sensitivity sensors relevant in different fields of application.
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Submitted 19 August, 2019;
originally announced August 2019.
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Enhancement of electric and magnetic dipole transition of rare-earth doped thin films tailored by high-index dielectric nanostructures
Authors:
Peter R. Wiecha,
Clément Majorel,
Christian Girard,
Arnaud Arbouet,
Bruno Masenelli,
Olivier Boisron,
Aurélie Lecestre,
Guilhem Larrieu,
Vincent Paillard,
Aurélien Cuche
Abstract:
We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few nanometer thin film of rare-earth ion doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused las…
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We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few nanometer thin film of rare-earth ion doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resolution of a few hundred nanometers, our approach appeals by its simplicity and high signal-to-noise ratio. We demonstrate our technique at the example of single silicon nanorods and dimers, in which we find a significant separation of electric and magnetic near-field contributions. Our method paves the way towards the efficient and rapid characterization of the electric and magnetic optical response of complex photonic nanostructures.
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Submitted 18 January, 2019; v1 submitted 29 January, 2018;
originally announced January 2018.
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Fano-Resonances in High Index Dielectric Nanowires for Directional Scattering
Authors:
Peter R. Wiecha,
Aurélien Cuche,
Houssem Kallel,
Gérard Colas des Francs,
Aurélie Lecestre,
Guilhem Larrieu,
Vincent Larrey,
Frank Fournel,
Thierry Baron,
Arnaud Arbouet,
Vincent Paillard
Abstract:
High refractive index dielectric nanostructures provide original optical properties thanks to the occurrence of size- and shape-dependent optical resonance modes. These modes commonly present a spectral overlap of broad, low-order modes (\textit{e.g}. dipolar modes) and much narrower, higher-order modes. The latter are usually characterized by a rapidly varying frequency-dependent phase, which - i…
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High refractive index dielectric nanostructures provide original optical properties thanks to the occurrence of size- and shape-dependent optical resonance modes. These modes commonly present a spectral overlap of broad, low-order modes (\textit{e.g}. dipolar modes) and much narrower, higher-order modes. The latter are usually characterized by a rapidly varying frequency-dependent phase, which - in superposition with the lower order mode of approximately constant phase - leads to typical spectral features known as Fano resonances. Interestingly, such Fano resonances occur in dielectric nanostructures of the simplest shapes. In spheroidal nanoparticles, interference between broad magnetic dipole and narrower electric dipole modes can be observed. In high aspect-ratio structures like nanowires, either the electric or the magnetic dipolar mode (depending on the illumination conditions) interferes with higher order multipole contributions of the same nature (electric or magnetic). Using the analytical Mie theory, we analyze the occurrence of Fano resonances in high-index dielectric nanowires and discuss their consequences like unidirectional scattering. By means of numerical simulations, we furthermore study the impact on those Fano resonances of the shape of the nanowire cross-sections as well as the coupling of two parallel nanowires. The presented results show that all-dielectric nanostructures, even of simple shapes, provide a reliable low-loss alternative to plasmonic nanoantennas.
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Submitted 17 January, 2018;
originally announced January 2018.
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Strongly directional scattering from dielectric nanowires
Authors:
Peter R. Wiecha,
Aurélien Cuche,
Arnaud Arbouet,
Christian Girard,
Gérard Colas des Francs,
Aurélie Lecestre,
Guilhem Larrieu,
Frank Fournel,
Vincent Larrey,
Thierry Baron,
Vincent Paillard
Abstract:
It has been experimentally demonstrated only recently that a simultaneous excitation of interfering electric and magnetic resonances can lead to uni-directional scattering of visible light in zero-dimensional dielectric nanoparticles. We show both theoretically and experimentally, that strongly anisotropic scattering also occurs in individual dielectric nanowires. The effect occurs even under eith…
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It has been experimentally demonstrated only recently that a simultaneous excitation of interfering electric and magnetic resonances can lead to uni-directional scattering of visible light in zero-dimensional dielectric nanoparticles. We show both theoretically and experimentally, that strongly anisotropic scattering also occurs in individual dielectric nanowires. The effect occurs even under either pure transverse electric or pure transverse magnetic polarized normal illumination. This allows for instance to toggle the scattering direction by a simple rotation of the incident polarization. Finally, we demonstrate that directional scattering is not limited to cylindrical cross-sections, but can be further tailored by varying the shape of the nanowires.
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Submitted 13 July, 2017; v1 submitted 24 April, 2017;
originally announced April 2017.
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Evolutionary Multi-Objective Optimisation of Colour Pixels based on Dielectric Nano-Antennas
Authors:
Peter R. Wiecha,
Arnaud Arbouet,
Christian Girard,
Aurélie Lecestre,
Guilhem Larrieu,
Vincent Paillard
Abstract:
The rational design of photonic nanostructures consists in anticipating their optical response from simple models or as variations of reference systems. This strategy is limited when different objectives are simultaneously targeted. Inspired from biology, evolutionary approaches drive the morphology of a nano-object towards an optimum through several cycles of selection, mutation and cross-over, m…
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The rational design of photonic nanostructures consists in anticipating their optical response from simple models or as variations of reference systems. This strategy is limited when different objectives are simultaneously targeted. Inspired from biology, evolutionary approaches drive the morphology of a nano-object towards an optimum through several cycles of selection, mutation and cross-over, mimicking the process of natural selection. However, their extension to scenarii with multiple objectives demands efficient computational schemes. We present a numerical technique to design photonic nanostructures with optical properties optimized along several arbitrary objectives. This combination of evolutionary multi-objective algorithms with frequency-domain electro-dynamical simulations is used to design silicon nanostructures resonant at user-defined, polarization-dependent wavelengths. The spectra of pixels fabricated by electron beam lithography following the optimized design show excellent agreement with the targeted objectives. The method is self-adaptive to arbitrary constraints, and therefore particularly interesting for the design of complex structures within technological limits.
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Submitted 24 April, 2017; v1 submitted 21 September, 2016;
originally announced September 2016.
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Understanding of the Retarded Oxidation Effects in Silicon Nanostructures
Authors:
C. Krzeminski,
X. -L. Han,
G. Larrieu
Abstract:
In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the o…
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In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the oxidation process explaining the retarded regime. The model describes the oxidation kinetics of silicon nanowires down to a few nanometers while predicting reasonable and physical stress levels at the Si/SiO$_{2}$ interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow.
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Submitted 13 March, 2012;
originally announced March 2012.
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Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
Authors:
Nicolas Reckinger,
Xiaohui Tang Vincent Bayot,
Dmitri A. Yarekha,
Emmanuel Dubois,
Sylvie Godey,
Xavier Wallart,
Guilhem Larrieu,
Adam Laszcz,
Jacek Ratajczak,
Pascal J. Jacques,
Jean-Pierre Raskin
Abstract:
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the S…
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The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.
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Submitted 25 October, 2011;
originally announced October 2011.
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Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
Authors:
Nicolas Reckinger,
Xiaohui Tang,
Emmanuel Dubois,
Guilhem Larrieu,
Denis Flandre,
Jean-Pierre Raskin,
Aryan Afzalian
Abstract:
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when t…
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The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.
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Submitted 25 October, 2011;
originally announced October 2011.
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A combination of capillary assembly and dielectrophoresis for wafer scale integration of carbon nanotubes-based electrical and mechanical devices
Authors:
Florent Seichepine,
Sven Salomon,
Maéva Collet,
Samuel Guillon,
Liviu Nicu,
Guilhem Larrieu,
Emmanuel Flahaut,
Christophe Vieu
Abstract:
The wafer scale integration of carbon nanotubes (CNT) remains a challenge for electronic and electromechanical applications. We propose a novel CNT integration process relying on the combination of controlled capillary assembly and buried electrode dielectrophoresis (DEP). This process enables to monitor the precise spatial localization of a high density of CNTs and their alignment in a pre-define…
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The wafer scale integration of carbon nanotubes (CNT) remains a challenge for electronic and electromechanical applications. We propose a novel CNT integration process relying on the combination of controlled capillary assembly and buried electrode dielectrophoresis (DEP). This process enables to monitor the precise spatial localization of a high density of CNTs and their alignment in a pre-defined direction. Large arrays of independent and low resistivity (4.4 x 10^-5 Ω.m) interconnections were achieved using this hybrid assembly with double-walled carbon nanotubes (DWNT). Finally, arrays of suspended individual CNT carpets have been realized and we demonstrate their potential use as functional nano-electromechanical systems (NEMS) by monitoring their resonance frequencies (ranging between 1.7 MHz to 10.5MHz) using a Fabry-Perot interferometer.
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Submitted 28 September, 2011;
originally announced September 2011.
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A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum
Authors:
Vikram Passi,
Aurélie Lecestre,
Christophe Krzeminski,
Guilhem Larrieu,
Emmanuel Dubois,
Jean-Pierre Raskin
Abstract:
Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric aci…
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Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers.
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Submitted 23 September, 2011;
originally announced September 2011.
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Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment
Authors:
Christophe Krzeminski,
Guilhem Larrieu,
Julien Penaud,
Evelyne Lampin,
Emmanuel Dubois
Abstract:
Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approa…
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Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the nanometer range is clearly demonstrated.
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Submitted 4 October, 2012; v1 submitted 16 June, 2011;
originally announced June 2011.
