Showing 1–12 of 12 results for author: Lanius, M

Long-lived non-equilibrium superconductivity in a non-centrosymmetric Rashba semiconductor

Authors: V. Narayan, P. C. Verpoort, J. R. A. Dann, D. Backes, C. J. B. Ford, M. Lanius, A. R. Jalil, P. Schüffelgen, G. Mussler, G. J. Conduit, D. Grützmacher

Abstract: We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field rever… ▽ More We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field reversal and, strikingly, induces a non-equilibrium superconducting state distinct from the equilibrium one. We develop a model of a Rashba system where non-equilibrium configurations relax on a finite timescale which captures the qualitative features of the data. We also obtain evidence for the slow dynamics in another non-superconducting Rashba system. Our work provides novel insights into the dynamics of non-centrosymmetric superconductors and Rashba systems in general. △ Less

Submitted 12 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 100, 024504 (2019)

Thickness dependence of electron-electron interactions in topological p-n junctions

Authors: Dirk Backes, Danhong Huang, Rhodri Mansell, Martin Lanius, Jörn Kampmeier, David Ritchie, Gregor Mussler, Godfrey Gumbs, Detlev Grützmacher, Vijay Narayan

Abstract: Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a find… ▽ More Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers. △ Less

Submitted 12 December, 2018; originally announced December 2018.

Comments: 38 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 99, 125139 (2019)

Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators

Authors: H. Plank, J. Pernul, S. Gebert, S. N. Danilov, J. König-Otto, S. Winnerl, M. Lanius, J. Kampmeier, G. Mussler, I. Aguilera, D. Grützmacher, S. D. Ganichev

Abstract: We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies th… ▽ More We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity. △ Less

Submitted 30 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Materials 2, 024202 (2018)

Electrical resistance of individual defects at a topological insulator surface

Authors: Felix Lüpke, Markus Eschbach, Tristan Heider, Martin Lanius, Peter Schüffelgen, Daniel Rosenbach, Nils von den Driesch, Vasily Cherepanov, Gregor Mussler, Lukasz Plucinski, Detlev Grützmacher, Claus M. Schneider, Bert Voigtländer

Abstract: Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defect… ▽ More Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. The largest localized voltage drop we find to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared to the other defects. △ Less

Submitted 20 April, 2017; originally announced April 2017.

Reinventing Solid State Electronics: Harnessing Quantum Confinement in Bismuth Thin Films

Authors: Farzan Gity, Lida Ansari, Martin Lanius, Peter Schüffelgen, Gregor Mussler, Detlev Grützmacher, James C. Greer

Abstract: Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages is achieved. As miniaturization continue… ▽ More Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages is achieved. As miniaturization continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form rectifying junctions fails and heterojunction formation becomes extremely difficult. Here it is shown there is no need to introduce dopant atoms nor is the formation of a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved for the first time solely by manipulation of quantum confinement in approximately 2 nanometer thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this new quantum approach enables room temperature operation. △ Less

Submitted 17 September, 2016; originally announced September 2016.

Comments: Includes Supplementary Materials

Opto-Electronic Characterization of Three Dimensional Topological Insulators

Authors: Helene Plank, Sergey N. Danilov, Vasily V. Bel'kov, Vadim A. Shalygin, Jörn Kampmeier, Martin Lanius, Gregor Mussler, Detlev Grützmacher, Sergey D. Ganichev

Abstract: We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning w… ▽ More We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneity's in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers. △ Less

Submitted 12 July, 2016; originally announced July 2016.

Comments: 6 pages, 4 figures

Topological states and phase transitions in Sb$_2$Te$_3$-GeTe multilayers

Authors: Thuy-Anh Nguyen, Dirk Backes, Angadjit Singh, Rhodri Mansell, Crispin Barnes, David A. Ritchie, Gregor Mussler, Martin Lanius, Detlev Grützmacher, Vijay Narayan

Abstract: Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact… ▽ More Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact is lacking. Here, working with multilayers of the TI Sb$_2$Te$_3$ and the band insulator GeTe, we provide experimental evidence of a multiple topological modes in a single Sb$_2$Te$_3$-GeTe-Sb$_2$Te$_3$ structure. Furthermore, we show that reducing the thickness of the GeTe layer induces a phase transition from a Dirac-like phase to a gapped phase. By comparing different multilayer structures we demonstrate that this transition occurs due to the hybridisation of states associated with different TI films. Our results demonstrate that the Sb$_2$Te$_3$-GeTe system offers strong potential towards manipulating topological states as well as towards controlledly inducing various topological phases. △ Less

Submitted 23 May, 2016; originally announced May 2016.

Comments: Scientific reports (accepted)

Journal ref: Scientific Reports 6, Article number: 27716 (2016)

Disentangling surface and bulk transport in topological-insulator $p$-$n$ junctions

Authors: D. Backes, D. Huang, R. Mansell, M. Lanius, J. Kampmeier, D. A. Ritchie, G. Mussler, G. Gumbs, D. Grützmacher, V. Narayan

Abstract: By combining $n$-type $\mathrm{Bi_2Te_3}$ and $p$-type $\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$- and $p$-type surface carriers. Here we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical… ▽ More By combining $n$-type $\mathrm{Bi_2Te_3}$ and $p$-type $\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$- and $p$-type surface carriers. Here we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical $\mathrm{Bi_2Te_3/Sb_2Te_3}$ heterostructures with varying relative thicknesses of the top and bottom layers. With increasing thickness of the $\mathrm{Sb_2Te_3}$ layer we observe a change from $n$- to $p$-type behavior via a specific thickness where the Hall signal is immeasurable. Assuming that the the bulk and surface states contribute in parallel, we can calculate and reproduce the dependence of the Hall and longitudinal components of resistivity on the film thickness. This highlights the role played by the bulk conduction channels which, importantly, cannot be probed using surface sensitive spectroscopic techniques. Our calculations are then buttressed by a semi-classical Boltzmann transport theory which rigorously shows the vanishing of the Hall signal. Our results provide crucial experimental and theoretical insights into the relative roles of the surface and bulk in the vertical topological $p$-$n$ junctions. △ Less

Submitted 18 September, 2017; v1 submitted 22 May, 2016; originally announced May 2016.

Comments: 11 pages, 5 figures

Journal ref: Phys. Rev. B 96, 125125 (2017)

$\mbox{Bi}_{1}\mbox{Te}_{1}$: a dual topological insulator

Authors: Markus Eschbach, Martin Lanius, Chengwang Niu, Ewa Młyńczak, Pika Gospodarič, Jens Kellner, Peter Schüffelgen, Mathias Gehlmann, Sven Döring, Elmar Neumann, Martina Luysberg, Gregor Mussler, Lukasz Plucinski, Markus Morgenstern, Detlev Grützmacher, Gustav Bihlmayer, Stefan Blügel, Claus M. Schneider

Abstract: A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non t… ▽ More A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non trivial time-reversal symmetry-driven character of $\mathbb{Z}_{2}=(0;001)$ and additionally a mirror-symmetry induced mirror Chern number of $n_{\cal M}=-2$, which indicates that $\mathrm{Bi_{1}Te_{1}}$ is both a weak topological insulator and a topological crystalline insulator. The coexistence of the two phenomena preordains distinct crystal planes to host topological surface states that are protected by the respective symmetries. The surface perpendicular to the stacking direction is the 'dark' surface of the weak topological insulator, while hosting mirror-symmetry protected surface states along the $\bar{Γ\mathrm{M}}$ direction at non-time-reversal invariant momenta points. We confirm the stacking sequence of our MBE-grown $\mathrm{Bi_{1}Te_{1}}$ thin films by X-ray diffraction and transmission electron microscopy, and find indications of the topological crystalline and weak topological character in the surface electronic spin structure by spin- and angle-resolved photoemission spectroscopy, which nicely match the results from density functional theory. △ Less

Submitted 29 April, 2016; originally announced April 2016.

Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators

Authors: H. Plank, L. E. Golub, S. Bauer, V. V. Bel'kov, T. Herrmann, P. Olbrich, M. Eschbach, L. Plucinski, J. Kampmeier, M. Lanius, G. Mussler, D. Grützmacher, S. D. Ganichev

Abstract: We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a c… ▽ More We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space. △ Less

Submitted 22 December, 2015; originally announced December 2015.

Comments: 15 pages, 12 figures

Journal ref: Phys. Rev. B 93, 125434 (2016)

Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures

Authors: Markus Eschbach, Ewa Mlynczak, Jens Kellner, Jörn Kampmeier, Martin Lanius, Elmar Neumann, Christian Weyrich, Mathias Gehlmann, Pika Gospodaric, Sven Döring, Gregor Mussler, Nataliya Demarina, Martina Luysberg, Gustav Bihlmayer, Thomas Schäpers, Lukasz Plucinski, Stefan Blügel, Markus Morgenstern, Claus M. Schneider, Detlev Grützmacher

Abstract: 3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct… ▽ More 3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future. △ Less

Submitted 9 October, 2015; originally announced October 2015.

Comments: 5 Figures; including supplementary information

Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$

Authors: Jens Kellner, Markus Eschbach, Jörn Kampmeier, Martin Lanius, Ewa Mlynczak, Gregor Mussler, Bernhard Holländer, Lukasz Plucinski, Marcus Liebmann, Detlev Grützmacher, Claus M. Schneider, Markus Morgenstern

Abstract: In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te… ▽ More In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ thin films with $x=0.94$ prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup matches this condition. The Dirac point is within 10 meV around the Fermi level and we do not observe any bulk bands intersecting the Fermi level. △ Less

Submitted 6 October, 2015; v1 submitted 15 June, 2015; originally announced June 2015.