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Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
Authors:
C. D. Weis,
C. C. Lo,
V. Lang,
A. M. Tyryshkin,
R. E. George,
K. M. Yu,
J. Bokor,
S. A. Lyon,
J. J. L. Morton,
T. Schenkel
Abstract:
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms…
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We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.
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Submitted 26 February, 2012; v1 submitted 7 February, 2012;
originally announced February 2012.
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Spin-dependent recombination in Czochralski silicon containing oxide precipitates
Authors:
V. Lang,
J. D. Murphy,
R. J. Falster,
J. J. L. Morton
Abstract:
Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3). Measurements reveal that photo-excited charge carriers recombine through Pb0 and Pb1 dangling bonds and comparison to precipitate-free material indicates that the…
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Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3). Measurements reveal that photo-excited charge carriers recombine through Pb0 and Pb1 dangling bonds and comparison to precipitate-free material indicates that these are present at both the sample surface and the oxide precipitates. The electronic recombination rates vary approximately linearly with precipitate density. Additional resonance lines arising from iron-boron and interstitial iron are observed and discussed. Our observations are inconsistent with bolometric heating and interpreted in terms of spin-dependent recombination. Electrically detected magnetic resonance is thus a very powerful and sensitive spectroscopic technique to selectively probe recombination centers in modern photovoltaic device materials.
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Submitted 31 October, 2011;
originally announced October 2011.
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Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas
Authors:
C. C. Lo,
V. Lang,
R. E. George,
J. J. L. Morton,
A. M. Tyryshkin,
S. A. Lyon,
J. Bokor,
T. Schenkel
Abstract:
We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7\:$GHz) and W-band ($94\:$GHz) microwave cavities, with corresponding Zeeman fields of $0.35\:$T and $3.36\:$T, respectively. It is found that the conduction electron resonance signal increases by two orders of magnitude from X- to W-band, while the hype…
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We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7\:$GHz) and W-band ($94\:$GHz) microwave cavities, with corresponding Zeeman fields of $0.35\:$T and $3.36\:$T, respectively. It is found that the conduction electron resonance signal increases by two orders of magnitude from X- to W-band, while the hyperfine-split donor resonance signals are enhanced by over one order of magnitude. We rule out a bolometric origin of the resonance signals, and find that direct spin-dependent scattering between the two-dimensional electron gas and neutral donors is inconsistent with the experimental observations. We propose a new polarization transfer model from the donor to the conduction electrons as the main contributer to the spin resonance signals observed.
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Submitted 17 December, 2010;
originally announced December 2010.
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Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment
Authors:
J. Sailer,
A. Wild,
V. Lang,
A. Siddiki,
D. Bougeard
Abstract:
We present a systematical experimental investigation of an unusual transport phenomenon observed in two dimensional electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as Hall resistance overshoot, however, lacks a consistent expla…
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We present a systematical experimental investigation of an unusual transport phenomenon observed in two dimensional electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as Hall resistance overshoot, however, lacks a consistent explanation so far. Based on our experimental findings we are able to develop a model that accounts for all of our observations in the framework of a screening theory for the IQHE. Within this model the origin of the overshoot is attributed to a transport regime where current is confined to co-existing evanescent incompressible strips of different filling factors.
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Submitted 15 July, 2010;
originally announced July 2010.
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A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure
Authors:
J. Sailer,
V. Lang,
G. Abstreiter,
G. Tsuchiya,
K. M. Itoh,
J. W. Ager III,
E. E. Haller,
D. Kupidura,
D. Harbusch,
S. Ludwig,
D. Bougeard
Abstract:
We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibit…
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We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.
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Submitted 16 January, 2009;
originally announced January 2009.
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Calculation of DOS-Dependent Channel Potentials in FETs in the Saturation Condition
Authors:
Woo-young So,
David V. Lang,
Arthur P. Ramirez
Abstract:
We calculated functions for the potential, Vch, in the channel of a field effect transistor with various densities of the localized states (DOS) by using a device simulator. In the saturation condition, Vch is found to fit satisfactorily to the analytical function, Vch(y)=Vg(1-(1-y/L) k), where Vg is the gate bias, y is the position along the channel, and L is the channel length. The power k, wh…
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We calculated functions for the potential, Vch, in the channel of a field effect transistor with various densities of the localized states (DOS) by using a device simulator. In the saturation condition, Vch is found to fit satisfactorily to the analytical function, Vch(y)=Vg(1-(1-y/L) k), where Vg is the gate bias, y is the position along the channel, and L is the channel length. The power k, which depends on the DOS, ranges from 0 to 0.5 even with an extensive variation of DOS. As a result, the total induced charge density in the saturation condition can be expressed a way similar to the linear condition by introducing a correction factor, alpha, ranging between 0.65 and 1.0.
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Submitted 20 September, 2007;
originally announced September 2007.
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Dependence of Mobility on Density of Gap States in Organics by GAMEaS - Gate Modulated Activation Energy Spectroscopy
Authors:
W. So,
D. V. Lang,
V. Y. Butko,
X. Chi,
J. C. Lashley,
A. P. Ramirez
Abstract:
We develop a broadly applicable transport-based technique, GAte Modulated activation Energy Spectroscopy (GAMEaS), for determining the density of states (DOS) in the energy gap. GAMEaS is applied to field effect transistors made from different single crystal oligomer semiconductors to extract the free-carrier mobility, u_0, from the field effect mobility, u_eff. Samples with a lower DOS exhibit…
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We develop a broadly applicable transport-based technique, GAte Modulated activation Energy Spectroscopy (GAMEaS), for determining the density of states (DOS) in the energy gap. GAMEaS is applied to field effect transistors made from different single crystal oligomer semiconductors to extract the free-carrier mobility, u_0, from the field effect mobility, u_eff. Samples with a lower DOS exhibit higher u_eff. Values of u_0 up to 100 +/- 40 cm2/Vs at 300K are observed, showing that performance can be greatly enhanced by improving sample purity and crystal quality.
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Submitted 14 May, 2007; v1 submitted 30 August, 2006;
originally announced August 2006.
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Amorphous-like Density of Gap States in Single Crystal Pentacene
Authors:
D. V. Lang,
X. Chi,
T. Siegrist,
A. M. Sergent,
A. P. Ramirez
Abstract:
We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the HOMO-LUMO bandgap. It is found that these highly purified crystals possess band tails broader than those typically observed in inorganic amorphous solids. Results on field effect transistors (FETs) fabricated from similar crystals are also compared. The FET data imply…
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We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the HOMO-LUMO bandgap. It is found that these highly purified crystals possess band tails broader than those typically observed in inorganic amorphous solids. Results on field effect transistors (FETs) fabricated from similar crystals are also compared. The FET data imply that the gap state density is much larger within 5-10 nm of the gate dielectric. These results are discussed in terms of both crystal phase domains and structural disorder mechanisms.
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Submitted 31 December, 2003;
originally announced December 2003.
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Bias-Dependent Generation and Quenching of Defects in Pentacene
Authors:
D. V. Lang,
X. Chi,
A. M. Sergent,
A. P. Ramirez
Abstract:
We describe a defect in pentacene single crystals that is created by bias stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev + 0.38eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67eV activation energy with a small (108 s-1) prefacto…
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We describe a defect in pentacene single crystals that is created by bias stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev + 0.38eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67eV activation energy with a small (108 s-1) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.
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Submitted 31 December, 2003;
originally announced December 2003.
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Limit of Field Effect Mobility on Pentacene Single Crystal
Authors:
V. Y. Butko,
X. Chi,
D. V. Lang,
A. P. Ramirez
Abstract:
We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A negative gate voltage of -50V significantly decreases the activation energy (Ea) down to 0.143 eV near room temperature. Assuming thermal equilibrium between…
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We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A negative gate voltage of -50V significantly decreases the activation energy (Ea) down to 0.143 eV near room temperature. Assuming thermal equilibrium between trapped and free carriers, from Ea = 0.143eV, we find the number of free carriers is only 0.4% of the total number of injected carriers. Along with effective mobility ~ 0.3 cm2/Vs this gives the intrinsic free carrier mobility of ~75 cm2/Vs.
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Submitted 16 May, 2003;
originally announced May 2003.
