-
Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Authors:
Farah Basarić,
Vladan Brajović,
Gerrit Behner,
Kristof Moors,
William Schaarman,
Andrei Manolescu,
Raghavendra Juluri,
Ana M. Sanchez,
Jin Hee Bae,
Hans Lüth,
Detlev Grützmacher,
Alexander Pawlis,
Thomas Schäpers
Abstract:
The realization of various qubit systems based on high-quality hybrid superconducting quantum devices, is often achieved using semiconductor nanowires. For such hybrid devices, a good coupling between the superconductor and the conducting states in the semiconductor wire is crucial. GaAs/InAs core/shell nanowires with an insulating core, and a conductive InAs shell fulfill this requirement, since…
▽ More
The realization of various qubit systems based on high-quality hybrid superconducting quantum devices, is often achieved using semiconductor nanowires. For such hybrid devices, a good coupling between the superconductor and the conducting states in the semiconductor wire is crucial. GaAs/InAs core/shell nanowires with an insulating core, and a conductive InAs shell fulfill this requirement, since the electronic states are strongly confined near the surface. However, maintaining a good crystal quality in the conducting shell is a challenge for this type of nanowire. In this work, we present phase-pure zincblende GaAs/InAs core/shell nanowires and analyze their low-temperature magnetotransport properties. We observe pronounced magnetic flux quantum periodic oscillations, which can be attributed to a combination of Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations. From the gate and temperature dependence of the conductance oscillations, as well as from supporting theoretical transport calculations, we conclude that the conducting states in the shell are in the quasi-ballistic transport regime, with few scattering centers, but nevertheless leading to an Altshuler-Aronov-Spivak correction that dominates at small magnetic field strengths. Our results demonstrate that phase-pure zincblende GaAs/InAs core/shell nanowires represent a very promising alternative semiconductor nanowire-based platform for hybrid quantum devices.
△ Less
Submitted 9 March, 2025;
originally announced March 2025.
-
Superconductive coupling and Josephson diode effect in selectively-grown topological insulator based three-terminal junctions
Authors:
Gerrit Behner,
Abdur Rehman Jalil,
Alina Rupp,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
The combination of an ordinary s-type superconductor with three-dimensional topological insulators creates a promising platform for fault-tolerant topological quantum computing circuits based on Majorana braiding. The backbone of the braiding mechanism are three-terminal Josephson junctions. It is crucial to understand the transport in these devices for further use in quantum computing application…
▽ More
The combination of an ordinary s-type superconductor with three-dimensional topological insulators creates a promising platform for fault-tolerant topological quantum computing circuits based on Majorana braiding. The backbone of the braiding mechanism are three-terminal Josephson junctions. It is crucial to understand the transport in these devices for further use in quantum computing applications. We present low-temperature measurements of topological insulator-based three-terminal Josephson junctions fabricated by a combination of selective-area growth of $\mathrm{Bi_{0.8}Sb_{1.2}Te_3}$ and shadow mask evaporation of Nb. This approach allows for the in-situ fabrication of Josephson junctions with an exceptional interface quality, important for the study of the proximity-effect. We map out the transport properties of the device as a function of bias currents and prove the coupling of the junctions by the observation of a multi-terminal geometry induced diode effect. We find good agreement of our findings with a resistively and capacitively shunted junction network model.
△ Less
Submitted 25 October, 2024;
originally announced October 2024.
-
Topological insulator based axial superconducting quantum interferometer structures
Authors:
Erik Zimmermann,
Abdur Rehman Jalil,
Michael Schleenvoigt,
Jan Karthein,
Benedikt Frohn,
Gerrit Behner,
Florian Lentz,
Stefan Trellenkamp,
Elmar Neumann,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillati…
▽ More
Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillations are explained by interference effects of coherent transport through topological surface states surrounding the cross-section of the nanoribbon.
△ Less
Submitted 20 March, 2024;
originally announced March 2024.
-
In-plane magnetic field driven conductance modulations in topological insulator kinks
Authors:
Gerrit Behner,
Kristof Moors,
Yong Zhang,
Michael Schleenvoigt,
Alina Rupp,
Erik Zimmermann,
Abdur Rehman Jalil,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects the…
▽ More
We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects their transmission across the kink. This magnetic field-driven trapping and conductance pattern can be explained with a semiclassical picture and is supported by quantum transport simulations. The interpretation is corroborated by varying the angle of the kink and analyzing the temperature dependence of the observed magnetoconductance pattern, indicating the importance of phase coherence along the cross section perimeter of the kink legs.
△ Less
Submitted 1 May, 2024; v1 submitted 10 October, 2023;
originally announced October 2023.
-
Current-induced magnetization switching in a magnetic topological insulator heterostructure
Authors:
Erik Zimmermann,
Justus Teller,
Michael Schleenvoigt,
Gerrit Behner,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias current dependence of the coercive field, which is attributed to the effect of the spin-orbit torque provided by the unpolarized bias current. Increasing the bias c…
▽ More
We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias current dependence of the coercive field, which is attributed to the effect of the spin-orbit torque provided by the unpolarized bias current. Increasing the bias current leads to a decrease in the magnetic order in the sample. When the applied current is subsequently reduced, the magnetic moments align with an externally applied magnetic field, resulting in repolarization in the opposite direction. This includes a reversal of the spin polarisation and hence a reversal of the chiral edge mode. Possible applications in spintronic devices are discussed.
△ Less
Submitted 15 August, 2023;
originally announced August 2023.
-
Fourier transformation based analysis routine for intermixed longitudinal and transversal hysteretic data for the example of a magnetic topological insulator
Authors:
Erik Zimmermann,
Michael Schleenvoigt,
Alina Rupp,
Gerrit Behner,
Jan Karthein,
Justus Teller,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
We present a symmetrization routine that optimizes and eases the analysis of data featuring the anomalous Hall effect. This technique can be transferred to any hysteresis with (point-)symmetric behaviour. The implementation of the method is demonstrated exemplarily using intermixed longitudinal and transversal data obtained from a chromium-doped ternary topological insulator revealing a clear hyst…
▽ More
We present a symmetrization routine that optimizes and eases the analysis of data featuring the anomalous Hall effect. This technique can be transferred to any hysteresis with (point-)symmetric behaviour. The implementation of the method is demonstrated exemplarily using intermixed longitudinal and transversal data obtained from a chromium-doped ternary topological insulator revealing a clear hysteresis. Furthermore, by introducing a mathematical description of the anomalous Hall hysteresis based on the error function precise values of the height and coercive field are determined.
△ Less
Submitted 31 July, 2023;
originally announced July 2023.
-
Aharonov-Bohm interference and phase-coherent surface-state transport in topological insulator rings
Authors:
Gerrit Behner,
Abdur Rehman Jalil,
Dennis Heffels,
Jonas Kölzer,
Kristof Moors,
Jonas Mertens,
Erik Zimmermann,
Gregor Mussler,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations…
▽ More
We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations originate from ballistic transport along the ring arms. The oscillations can therefore be attributed to topological surface states, which can maintain a quasi-ballistic transport regime in the presence of disorder. Further insight on the phase coherence is gained by comparing with similar Aharonov-Bohm-type oscillations in topological insulator nanoribbons exposed to an axial magnetic field. Here, quasi-ballistic phase-coherent transport is confirmed for closed-loop topological surface states in transverse direction enclosing the cross-section of the nanoribbon. In contrast, the appearance of universal conductance fluctuations indicates phase-coherent transport in the diffuse regime, which is attributed to bulk carrier transport. Thus, it appears that even in the presence of diffusive $p$-type charge carriers in Aharonov-Bohm ring structures, phase-coherent quasi-ballistic transport of topologically protected surface states is maintained over long distances.
△ Less
Submitted 3 March, 2023;
originally announced March 2023.
-
Supercurrent in Bi$_4$Te$_3$ Topological Material-Based Three-Terminal Junctions
Authors:
Jonas Kölzer,
Abdur Rehman Jalil,
Daniel Rosenbach,
Lisa Arndt,
Gregor Mussler,
Peter Schüffelgen,
Detlev Grützmacher,
Hans Lüth,
Thomas Schäpers
Abstract:
In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of t…
▽ More
In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of the junctions is interpreted using a numerical simulation of a similar geometry based on a resistively and capacitively shunted Josephson junction model. The temperature dependency indicates that the device behaves similar to prior experiments with single Josephson junctions comprising topological insulators weak links. Irradiating radio frequencies to the junction we find a spectrum of integer Shapiro steps and an additional fractional step, which is interpreted by a skewed current-phase relationship. In a perpendicular magnetic field we observe Fraunhofer-like interference patterns of the switching currents.
△ Less
Submitted 3 January, 2023;
originally announced January 2023.
-
Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons
Authors:
Daniel Rosenbach,
Kristof Moors,
Abdur R. Jalil,
Jonas Kölzer,
Erik Zimmermann,
Jürgen Schubert,
Soraya Karimzadah,
Gregor Mussler,
Peter Schüffelgen,
Detlev Grützmacher,
Hans Lüth,
Thomas Schäpers
Abstract:
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berr…
▽ More
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berry phase offset of $π$ of self-interfering charge carriers an energy gap within the surface state dispersion appears and all states become spin-degenerate. We investigate and compare the magnetic field dependent surface state dispersion in selectively deposited Bi$_2$Te$_3$ TI micro- and nanoribbon structures by analysing the gate voltage dependent magnetoconductance at cryogenic temperatures. While in wide microribbon devices the field effect mainly changes the amount of bulk charges close to the top surface we identify coherent transverse surface states along the perimeter of the nanoribbon devices responding to a change in top gate potential. We quantify the energetic spacing in between these quantized transverse subbands by using an electrostatic model that treats an initial difference in charge carrier densities on the top and bottom surface as well as remaining bulk charges. In the gate voltage dependent transconductance we find oscillations that change their relative phase by $π$ at half-integer values of the magnetic flux quantum applied coaxial to the nanoribbon, which is a signature for a magnetic flux dependent topological phase transition in narrow, selectively deposited TI nanoribbon devices.
△ Less
Submitted 8 February, 2022; v1 submitted 7 April, 2021;
originally announced April 2021.
-
In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions
Authors:
Jonas Kölzer,
Kristof Moors,
Abur R. Jalil,
Erik Zimmermann,
Daniel Rosenbach,
Lidia Kibkalo,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
Thomas L. Schmidt,
Hans Lüth,
Thomas Schäpers
Abstract:
Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an…
▽ More
Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an in-plane magnetic field, the orbital effect cannot be neglected when the surface states are confined to the boundary of a nanoribbon geometry. Here, we report on the magnetotransport properties of such three-terminal junctions. We observe a dependence of the current on the in-plane magnetic field, with a distinct steering pattern of the surface state current towards a preferred output terminal for different magnetic field orientations. We demonstrate that this steering effect originates from the orbital effect, trapping the phase-coherent surface states in the different legs of the junction on opposite sides of the nanoribbon and breaking the left-right symmetry of the transmission across the junction. The reported magnetotransport properties demonstrate that an in-plane magnetic field is not only relevant but also very useful for the characterization and manipulation of transport in three-dimensional topological insulator nanoribbon-based junctions and circuits, acting as a topoelectric current switch.
△ Less
Submitted 22 December, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
-
Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices
Authors:
Jinzhong Zhang,
Pok-Lam Tse,
Abdur-Rehman Jalil,
Jonas Kölzer,
Daniel Rosenbach,
Martina Luysberg,
Gregory Panaitov,
Hans Lüth,
Zhigao Hu,
Detlev Grützmacher,
Jia Grace Lu,
Thomas Schäpers
Abstract:
Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determine…
▽ More
Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determined for the hole carriers. The distinct phase-coherence is confirmed by the observation of Aharonov--Bohm type oscillations for magnetic fields applied along the nanowire axis. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer on the nanowire surface. In addition, for Nb/GeTe-nanowire/Nb Josephson junctions, we obtained a proximity-induced critical current of about 0.2$μ$A at 0.4K. By applying a magnetic field perpendicular to the nanowire axis, the critical current decreases monotonously with increasing magnetic field, which indicates that the structure is in the small-junction-limit. Whereas, by applying a parallel magnetic field the critical current oscillates with a period of the magnetic flux quantum indicating once again the presence of a tubular hole channel.
△ Less
Submitted 15 September, 2020;
originally announced September 2020.
-
Quantum transport in topological surface states of Bi$_2$Te$_3$ nanoribbons
Authors:
Daniel Rosenbach,
Nico Oellers,
Abdur Rehman Jalil,
Martin Mikulics,
Jonas Kölzer,
Erik Zimmermann,
Gregor Mussler,
Stephany Bunte,
Detlev Grützmacher,
Hans Lüth,
Thomas Schäpers
Abstract:
Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbo…
▽ More
Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbons and nano Hall bars at cryogenic temperatures for their topological properties. The Hall bars are defined in deep-etched Si$_3$N$_4$/SiO$_2$ nano-trenches on a silicon (111) substrate followed by a selective area growth process via molecular beam epitaxy. The selective area growth is beneficial to the device quality, as no subsequent fabrication needs to be performed to shape the nanoribbons. Transmission line measurements are performed to evaluate contact resistances of Ti/Au contacts applied as well as the specific resistance of the Bi$_2$Te$_3$ binary topological insulator. In the diffusive transport regime of these unintentionally $n$-doped Bi$_2$Te$_3$ topological insulator nano Hall bars, we identify distinguishable electron trajectories by analyzing angle-dependent universal conductance fluctuation spectra. When the sample is tilted from a perpendicular to a parallel magnetic field orientation, these high frequent universal conductance fluctuations merge with low frequent Aharonov-Bohm type oscillations originating from the topologically protected surface states encircling the nanoribbon cross section. For 500 nm wide Hall bars we also identify low frequent Shubnikov-de Haas oscillations in the perpendicular field orientation, that reveal a topological high-mobility 2D transport channel, partially decoupled from the bulk of the material.
△ Less
Submitted 24 January, 2020;
originally announced January 2020.
-
Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires
Authors:
P. Zellekens,
N. Demarina,
J. Janßen,
T. Rieger,
M. I. Lepsa,
P. Perla,
G. Panaitov,
H. Lüth,
D. Grützmacher,
T. Schäpers
Abstract:
Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--…
▽ More
Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--Poisson solver revealed that the ambipolar characteristics originate from a Fermi level dependent occupation of hole and electron states within the approximately circular quantum well formed in the InSb shell. By applying a perpendicular magnetic field with respect to the nanowire axis, conductance fluctuations were observed, which are used to extract the phase-coherence length. By averaging the magneto-conductance traces at different back-gate voltages, weak antilocalization features are resolved. Regular flux-periodic conductance oscillations are measured when an axial magnetic field is applied. These oscillations are attributed to closed-loop quantized states located in the InSb shell which shift their energetic position periodically with the magnetic flux. Possible reasons for experimentally observed variations in the oscillation patterns are discussed using simulation results.
△ Less
Submitted 2 April, 2020; v1 submitted 13 November, 2019;
originally announced November 2019.
-
Phase-coherent loops in selectively-grown topological insulator nanoribbons
Authors:
Jonas Kölzer,
Daniel Rosenbach,
Christian Weyrich,
Tobias W. Schmitt,
Michael Schleenvoigt,
Abdur Rehman Jalil,
Peter Schüffelgen,
Gregor Mussler,
Vincent E. Sacksteder IV,
Detlev Grützmacher,
Hans Lüth,
Thomas Schäpers
Abstract:
Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused…
▽ More
Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused by well-defined and sharply resolved phase-coherent loops. From measurements at different magnetic field tilt angles we deduced that these loops are preferentially oriented parallel to the quintuple layers of the topological insulator material. Both from a theoretical analysis of universal conductance fluctuations and from weak antilocalization measured at low temperature the electronic phase-coherence lengths $l_φ$ are extracted, which is found to be larger in the former case. Possible reasons for this deviation are discussed.
△ Less
Submitted 23 July, 2019;
originally announced July 2019.
-
Temperature-dependence of the phase-coherence length in InN nanowires
Authors:
Ch. Blomers,
Th. Schapers,
T. Richter,
R. Calarco,
H. Luth,
M. Marso
Abstract:
We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root-mean-square and the correlation field of the conductance fluctuations at various temperatures the phase-coherence lengt…
▽ More
We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root-mean-square and the correlation field of the conductance fluctuations at various temperatures the phase-coherence length was determined.
△ Less
Submitted 28 February, 2008;
originally announced February 2008.
-
Phase-coherent transport in InN nanowires of various sizes
Authors:
C. Blomers,
Th. Schapers,
T. Richter,
R. Calarco,
H. Luth,
M. Marso
Abstract:
We investigate phase-coherent transport in InN nanowires of various diameters and lengths. The nanowires were grown by means of plasma-assisted molecular beam epitaxy. Information on the phase-coherent transport is gained by analyzing the characteristic fluctuation pattern in the magneto-conductance. For a magnetic field oriented parallel to the wire axis we found that the correlation field main…
▽ More
We investigate phase-coherent transport in InN nanowires of various diameters and lengths. The nanowires were grown by means of plasma-assisted molecular beam epitaxy. Information on the phase-coherent transport is gained by analyzing the characteristic fluctuation pattern in the magneto-conductance. For a magnetic field oriented parallel to the wire axis we found that the correlation field mainly depends on the wire cross section, while the fluctuation amplitude is governed by the wire length. In contrast, if the magnetic field is oriented perpendicularly, for wires longer than approximately 200 nm the correlation field is limited by the phase coherence length. Further insight into the orientation dependence of the correlation field is gained by measuring the conductance fluctuations at various tilt angles of the magnetic field.
△ Less
Submitted 27 February, 2008;
originally announced February 2008.
-
Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire
Authors:
N. I. Cade,
M. Hadjipanayi,
R. Roshan,
A. C. Maciel,
J. F. Ryan,
F. Macherey,
Th. Schaepers,
H. Lueth
Abstract:
Modulation-doped GaAs v-groove quantum wires (QWRs) have been fabricated with novel electrical contacts made to two-dimensional electron-gas (2DEG) reservoirs. Here, we present longitudinal photocurrent (photoconductivity/PC) spectroscopy measurements of a single QWR. We clearly observe conductance in the ground-state one-dimensional subbands; in addition, a highly temperature-dependent response…
▽ More
Modulation-doped GaAs v-groove quantum wires (QWRs) have been fabricated with novel electrical contacts made to two-dimensional electron-gas (2DEG) reservoirs. Here, we present longitudinal photocurrent (photoconductivity/PC) spectroscopy measurements of a single QWR. We clearly observe conductance in the ground-state one-dimensional subbands; in addition, a highly temperature-dependent response is seen from other structures within the v-groove. The latter phenomenon is attributed to the effects of structural topography and localization on carrier relaxation. The results of power-dependent PC measurements suggest that the QWR behaves as a series of weakly interacting localized states, at low temperatures.
△ Less
Submitted 3 April, 2006;
originally announced April 2006.
-
Carrier relaxation in GaAs v-groove quantum wires and the effects of localization
Authors:
N. I. Cade,
R. Roshan,
M. Hauert,
A. C. Maciel,
J. F. Ryan,
A. Schwarz,
Th. Schäpers,
H. Lüth
Abstract:
Carrier relaxation processes have been investigated in GaAs/AlGaAs v-groove quantum wires (QWRs) with a large subband separation (46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation (PLE) measurements; we observe strong emission from the first excited state of the QWR below ~50 K. This is attribu…
▽ More
Carrier relaxation processes have been investigated in GaAs/AlGaAs v-groove quantum wires (QWRs) with a large subband separation (46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation (PLE) measurements; we observe strong emission from the first excited state of the QWR below ~50 K. This is attributed to reduced inter-subband relaxation via phonon scattering between localized states. Theoretical calculations and experimental results indicate that the pinch-off regions, which provide additional two-dimensional confinement for the QWR structure, have a blocking effect on relaxation mechanisms for certain structures within the v-groove. Time-resolved PL measurements show that efficient carrier relaxation from excited QWR states into the ground state, occurs only at temperatures > 30 K. Values for the low temperature radiative lifetimes of the ground- and first excited-state excitons have been obtained (340 ps and 160 ps respectively), and their corresponding localization lengths along the wire estimated.
△ Less
Submitted 21 June, 2004;
originally announced June 2004.
-
Spectroscopy of Local Density of States Fluctuations in a Disordered Conductor (Experiment)
Authors:
T. Schmidt,
R. J. Haug,
V. I. Fal'ko,
K. v. Klitzing,
A. Foerster,
H. Lueth
Abstract:
The local density of states of a degenerate semiconductor is investigated at low magnetic fields. In order to realize this experiment, we designed a strongly asymmetric double-barrier heterostructure with heavily doped contacts and study the resonant tunneling transport through the lowest localized (zero-dimensional) level in the quantum well. Fine structure in the tunneling current as a functio…
▽ More
The local density of states of a degenerate semiconductor is investigated at low magnetic fields. In order to realize this experiment, we designed a strongly asymmetric double-barrier heterostructure with heavily doped contacts and study the resonant tunneling transport through the lowest localized (zero-dimensional) level in the quantum well. Fine structure in the tunneling current as a function of bias voltage and magnetic field images mesoscopic fluctuations of the local density of states in the emitter contact. Our quantitative analysis demonstrates that the fluctuation pattern originates from quantum interference of diffusive electron waves in the three-dimensional disordered system on the length scale of the mean free path. Since the fluctuations reflect the properties of the electron states below the Fermi level, the observed mesoscopic effect is temperature insensitive.
△ Less
Submitted 30 October, 1995; v1 submitted 21 September, 1995;
originally announced September 1995.
