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Multiscale modeling of resistive switching in gold nanogranular films
Authors:
Miquel López-Suárez,
Claudio Melis,
Luciano Colombo,
Walter Tarantino
Abstract:
Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a phenomenon we use a multiscale approach blending together an ab initio treatment of the electric current at the nanoscale, a molecular dynamical approach dictating…
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Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a phenomenon we use a multiscale approach blending together an ab initio treatment of the electric current at the nanoscale, a molecular dynamical approach dictating structural rearrangements, and a finite-element solution of the heat equation for heat propagation in the sample. We also consider structural changes due to electromigration which are modelled on the basis of experimental observations on similar systems. Within such an approach, we manage to describe some distinctive features of the resistive switching occurring in nanogranular film and provide a physical interpretation at the microscopic level.
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Submitted 17 October, 2022;
originally announced October 2022.
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Modelling charge transport in gold nanogranular films
Authors:
Miquel López-Suárez,
Claudio Melis,
Luciano Colombo,
Walter Tarantino
Abstract:
Cluster-assembled metallic films show interesting electrical properties, both in the near-to-percolation regime, when deposited clusters do not form a complete layer yet, and when the film thickness is well above the electrical percolation threshold. Correctly estimating their electrical conductivity is crucial, but, particularly for the latter regime, standard theoretical tools are not quite adeq…
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Cluster-assembled metallic films show interesting electrical properties, both in the near-to-percolation regime, when deposited clusters do not form a complete layer yet, and when the film thickness is well above the electrical percolation threshold. Correctly estimating their electrical conductivity is crucial, but, particularly for the latter regime, standard theoretical tools are not quite adequate. We therefore developed a procedure based on an atomically informed mesoscopic model in which ab-initio estimates of electronic transport at the nanoscale are used to reconstruct the conductivity of nanogranular gold films generated by molecular dynamics. An equivalent resistor network is developed, appropriately accounting for ballistic transport. The method is shown to correctly capture the non-monotonic behavior of the conductivity as a function of the film thickness, namely a signature feature of nanogranular films.
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Submitted 16 October, 2021; v1 submitted 6 October, 2021;
originally announced October 2021.
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Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy
Authors:
Diego de Matteis,
Marta De Luca,
Elham M. T. Fadaly,
Marcel A. Verheijen,
Miquel Lopez-Suarez,
Riccardo Rurali,
Erik P. A. M. Bakkers,
Ilaria Zardo
Abstract:
Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the reali…
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Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal phase GaAs-Ge and GaAs-SixGe1-x core-shell nanowires with x up to 0.59. By combining position-, polarization- and excitation wavelength-dependent u-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency-composition calibration curves for the phonon modes, investigating the dependence of the phononic modes on the position along the nanowire, and exploiting resonant Raman conditions to unveil the coupling between lattice vibrations and electronic transitions, we lay the grounds for a deep understanding of the phononic properties of 2H-SixGe1-x nanostructured alloys and of their relationship with crystal quality, chemical composition, and electronic band structure.
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Submitted 20 January, 2021;
originally announced January 2021.
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Observation of second sound in a rapidly varying temperature field in Ge
Authors:
Albert Beardo,
Miquel López-Suárez,
Luis Alberto Pérez,
Lluc Sendra,
Maria Isabel Alonso,
Claudio Melis,
Javier Bafaluy,
Juan Camacho,
Luciano Colombo,
Riccardo Rurali,
F. X. Alvarez,
Juan Sebastián Reparaz
Abstract:
Second sound is known as the thermal transport regime where heat is carried by temperature waves. Its experimental observation was previously restricted to a small number of materials, usually in rather narrow temperature windows. We show that it is possible to overcome these limitations by driving the system with a rapidly varying temperature field. This effect is demonstrated in bulk Ge between…
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Second sound is known as the thermal transport regime where heat is carried by temperature waves. Its experimental observation was previously restricted to a small number of materials, usually in rather narrow temperature windows. We show that it is possible to overcome these limitations by driving the system with a rapidly varying temperature field. This effect is demonstrated in bulk Ge between 7 kelvin and room temperature, studying the phase lag of the thermal response under a harmonic high frequency external thermal excitation, addressing the relaxation time and the propagation velocity of the heat waves. These results provide a new route to investigate the potential of wave-like heat transport in almost any material, opening opportunities to control heat through its oscillatory nature.
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Submitted 8 January, 2021; v1 submitted 10 July, 2020;
originally announced July 2020.
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New insights in the lattice dynamics of monolayers, bilayers, and trilayers of WSe2 and unambiguous determination of few-layer-flakes' thickness
Authors:
Marta De Luca,
Xavier Cartoixà,
Javier Martín-Sánchez,
Miquel López-Suárez,
Rinaldo Trotta,
Riccardo Rurali,
Ilaria Zardo
Abstract:
Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challenging material from the lattice dynamics point of view. Indeed, for a long time the main two phonon modes (A1g and E12g) have been wrongly assigned. In the last few years, these two modes have been properly interpreted, and their quasi-degeneracy in the monolayer has been used for its identification. I…
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Among the most common few-layers transition metal dichalcogenides (TMDs), WSe2 is the most challenging material from the lattice dynamics point of view. Indeed, for a long time the main two phonon modes (A1g and E12g) have been wrongly assigned. In the last few years, these two modes have been properly interpreted, and their quasi-degeneracy in the monolayer has been used for its identification. In this work, we show that this approach has a limited validity and we propose an alternative, more general approach, based on multi-phonon bands. Moreover, we show and interpret all the peaks (about 40) appearing in the Raman spectra of monolayers, bilayers, and trilayers of WSe2 by combining experimental wavelength- and polarization-dependent Raman studies with density-functional theory calculations providing the phonon dispersions, the polarization-resolved first-order Raman spectra, and the one- and two-phonon density of states. This complete study not only offers a method to distinguish between monolayers, bilayers, and trilayers with no need of optical images and atomic force microscopy, but it also sheds light on the interpretation of single and multi-phonon bands appearing in the inelastic light scattering experiments of layered WSe2; some of these bands were never observed before, and some were observed and uncertainly assigned. We promote the full understanding of the lattice dynamics of this material that is crucial for the realization of optoelectronics devices and of novel phononic metamaterials, such as TMDs superlattices.
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Submitted 28 October, 2019;
originally announced October 2019.
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Cost of remembering a bit of information
Authors:
Davide Chiuchiù,
Miquel López-Suárez,
Igor Neri,
Maria Cristina Diamantini,
Luca Gammaitoni
Abstract:
In 1961, Rolf Landauer pointed out that resetting a binary memory requires a minimum energy of $k_BT \ln(2)$. However, once written, any memory is doomed to loose its content if no action is taken. To avoid memory losses, a refresh procedure is periodically performed. In this paper we present a theoretical model and an experiment on a micro-electro-mechanical system to evaluate the minimum energy…
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In 1961, Rolf Landauer pointed out that resetting a binary memory requires a minimum energy of $k_BT \ln(2)$. However, once written, any memory is doomed to loose its content if no action is taken. To avoid memory losses, a refresh procedure is periodically performed. In this paper we present a theoretical model and an experiment on a micro-electro-mechanical system to evaluate the minimum energy required to preserve one bit of information over time. Two main conclusions are drawn: i) in principle the energetic cost to preserve information for a fixed time duration with a given error probability can be arbitrarily reduced if the refresh procedure is performed often enough; ii) the Heisenberg uncertainty principle sets an upper bound on the memory lifetime.
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Submitted 10 May, 2018; v1 submitted 16 March, 2017;
originally announced March 2017.
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Electronic transport modulation on few-layers suspended MoS$_2$ under strain
Authors:
Igor Neri,
Miquel López-Suárez
Abstract:
The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new technologies. This can determined by several phenomena as piezoelectric effect, piezoresistive effect and modulation of Schottky barrier. In particular, MoS$_2$, among ot…
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The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new technologies. This can determined by several phenomena as piezoelectric effect, piezoresistive effect and modulation of Schottky barrier. In particular, MoS$_2$, among other Transition Metal Dichalcogenides (TMDs), is predicted to show a transition from semiconductor to metal under strain. In this article we present measurements on the modulation of electronic transport on few layer MoS$_2$ suspended ribbons under uniaxial tensile strain. Experimentally observed changes in the two terminal IV curves can be explained in terms of band gap closing in the semiconductor. A maximum gauge factor of 240 is achieved for a 3-layer ribbon. We also report on the fabrication process that allows to apply high strains to suspended MoS$_2$ ribbons, paving the way to future studies on the effect of strain in 2D materials.
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Submitted 11 June, 2018; v1 submitted 30 September, 2016;
originally announced September 2016.
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Heat production and error probability relation in Landauer reset at effective temperature
Authors:
Igor Neri,
Miquel López-Suárez
Abstract:
The erasure of a classical bit of information is a dissipative process. The minimum heat produced during this operation has been theorized by Rolf Landauer in 1961 to be equal to $k_B T \ln 2$ and takes the name of Landauer limit, Landauer reset or Landauer principle. Despite its fundamental importance, the Landauer limit remained untested experimentally for more than fifty years until recently wh…
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The erasure of a classical bit of information is a dissipative process. The minimum heat produced during this operation has been theorized by Rolf Landauer in 1961 to be equal to $k_B T \ln 2$ and takes the name of Landauer limit, Landauer reset or Landauer principle. Despite its fundamental importance, the Landauer limit remained untested experimentally for more than fifty years until recently when it has been tested using colloidal particles and magnetic dots. Experimental measurements on different devices, like micro-mechanical systems or nano-electronic devices are still missing. Here we show the results obtained in performing the Landauer reset operation in a micro-mechanical system, operated at an effective temperature. The measured heat exchange is in accordance with the theory reaching values close to the expected limit. The data obtained for the heat production is then correlated to the probability of error in accomplishing the reset operation.
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Submitted 7 September, 2016; v1 submitted 16 July, 2016;
originally announced July 2016.
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Micro-electromechanical memory bit based on magnetic repulsion
Authors:
Miquel López-Suárez,
Igor Neri
Abstract:
A bistable micro-mechanical system based on magnetic repulsion is presented exploring its applicability as memory unit where the state of the bit is encoded in the rest position of a deflected cantilever. The non-linearity induced on the cantilever can be tuned through the magnetic interaction intensity between the cantilever magnet and the counter magnet in terms of geometrical parameters. A simp…
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A bistable micro-mechanical system based on magnetic repulsion is presented exploring its applicability as memory unit where the state of the bit is encoded in the rest position of a deflected cantilever. The non-linearity induced on the cantilever can be tuned through the magnetic interaction intensity between the cantilever magnet and the counter magnet in terms of geometrical parameters. A simple model provides a sound prediction of the behavior of the system. Finally we measured the energy required to store a bit of information on the system that, for the considered protocols, is bounded by the energy barrier separating the two stable states.
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Submitted 14 July, 2016; v1 submitted 2 May, 2016;
originally announced May 2016.
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Band gap engineering of MoS$_2$ upon compression
Authors:
Miquel López-Suárez,
Igor Neri,
Riccardo Rurali
Abstract:
Molybdenum disulfide (MoS$_2$) is a promising candidate for 2D nanoelectronic devices, that shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS$_2$ upon both compressive and tensile strains with first-principles density-functional calculations for different number of layers. The results show that the band-gap can be engineered for experimentally a…
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Molybdenum disulfide (MoS$_2$) is a promising candidate for 2D nanoelectronic devices, that shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS$_2$ upon both compressive and tensile strains with first-principles density-functional calculations for different number of layers. The results show that the band-gap can be engineered for experimentally attainable strains (i.e. $\pm 0.15$). However compressive strain can result in bucking that can prevent the use of large compressive strain. We then studied the stability of the compression, calculating the critical strain that results in the on-set of buckling for free-standing nanoribbons of different lengths. The results demonstrate that short structures, or few-layer MoS$_2$, show semi-conductor to metal transition upon compressive strain without bucking.
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Submitted 30 April, 2016;
originally announced May 2016.
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Sub $k_B T$ micro-electromechanical irreversible logic gate
Authors:
Miquel Lopez-Suarez,
Igor Neri,
Luca Gammaitoni
Abstract:
In modern computers, computation is performed by assembling together sets of logic gates. Popular gates like AND, OR, XOR, processing two logic inputs and yielding one logic output, are often addressed as irreversible logic gates where the sole knowledge of the output logic value, is not sufficient to infer the logic value of the two inputs. Such gates are usually believed to be bounded to dissipa…
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In modern computers, computation is performed by assembling together sets of logic gates. Popular gates like AND, OR, XOR, processing two logic inputs and yielding one logic output, are often addressed as irreversible logic gates where the sole knowledge of the output logic value, is not sufficient to infer the logic value of the two inputs. Such gates are usually believed to be bounded to dissipate a finite minimum amount of energy determined by the input-output information difference. Here we show that this is not necessarily the case, by presenting an experiment where a OR logic gate, realized with a micro electromechanical cantilever, is operated with energy well below the expected limit, provided the operation is slow enough and frictional phenomena are properly addressed.
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Submitted 28 June, 2016; v1 submitted 11 August, 2015;
originally announced August 2015.
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Reset and switch protocols at Landauer limit in a graphene buckled ribbon
Authors:
I. Neri,
M. Lopez-Suarez,
D. Chiuchiu',
L. Gammaitoni
Abstract:
Heat produced during a reset operation is meant to show a fundamental bound known as Landauer limit, while simple switch operations have an expected minimum amount of produced heat equal to zero. However, in both cases, present-day technology realizations dissipate far beyond these theoretical limits. In this paper we present a study based on molecular dynamics simulations, where reset and switch…
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Heat produced during a reset operation is meant to show a fundamental bound known as Landauer limit, while simple switch operations have an expected minimum amount of produced heat equal to zero. However, in both cases, present-day technology realizations dissipate far beyond these theoretical limits. In this paper we present a study based on molecular dynamics simulations, where reset and switch protocols are applied on a graphene buckled ribbon, employed here as a nano electromechanical switch working at the thermodynamic limit.
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Submitted 27 July, 2015;
originally announced July 2015.
