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Towards 4D modelisation of thermal-field emission from semiconductors
Authors:
Salvador Barranco Cárceles,
Aquila Mavalankar,
Veronika Zadin,
Ian Underwood,
Andreas Kyritsakis
Abstract:
The theoretical picture of thermal field-emission (TFE) from semiconductors has been limited to 1D and 2D models. This can be attributed to the complex and interdependent phenomena that is involved in TFE from semiconductors which makes the calculations cumbersome. Such limitations result in a partial understanding of the underlying physics of semiconducting surfaces under high electrical fields,…
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The theoretical picture of thermal field-emission (TFE) from semiconductors has been limited to 1D and 2D models. This can be attributed to the complex and interdependent phenomena that is involved in TFE from semiconductors which makes the calculations cumbersome. Such limitations result in a partial understanding of the underlying physics of semiconducting surfaces under high electrical fields, which requires the addition of the temporal dimension (4D) to yield a realistic model. Here we develop a 3D model of TFE from semiconductors that can take arbitrary geometries and doping levels. Our model successfully reproduces the characteristic saturation plateau of some semiconductors, as well as its dependence in temperature. The model is found to be in good agreement with experimental data from ntype Germanium at a qualitative level. We propose this model as a platform for future extensions into the full 4D framework, incorporating temporal dynamics for a more complete and predictive description of thermal-field emission from semiconductors.
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Submitted 13 June, 2025;
originally announced June 2025.
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Theory and computation of thermal-field emission from semiconductors
Authors:
Salvador Barranco Cárceles,
Veronika Zadin,
Aquila Mavalankar,
Ian Underwood,
Andreas Kyritsakis
Abstract:
Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by the lack of accurate 3D models for the simulation of thermal-field emission from semiconductors. Here we review and correct the equations of field emission from…
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Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by the lack of accurate 3D models for the simulation of thermal-field emission from semiconductors. Here we review and correct the equations of field emission from semiconductors and include them to expand GETELEC (General Tool for Electron Emission Calculations). Our method covers all electron emission regime (field, thermal, and intermediate), aiming to maximise the calculation accuracy while minimising the computational cost. GETELEC-2.0 is able to reproduce the characteristic non-linear I-V curves in Fowler-Nordheim coordinates obtained from semiconductors, giving insights about their nature. As well as providing an explanation to the lack of experimental observation of valence band electrons from semiconductors.
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Submitted 6 June, 2025;
originally announced June 2025.
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Fundamental mechanisms of high-electric-field vacuum arc initiation
Authors:
Walter Wuensch,
Sergio Calatroni,
Flyura Djurabekova,
Andreas Kyritsakis,
Yinon Ashkenazy
Abstract:
This review brings together a body of experimental, theoretical, and simulation work addressing the behaviour of high-field devices and the fundamental process of vacuum arcing, also referred to as vacuum breakdown. Detailed experimental observations and results relating to a wide range of aspects of high-field devices including conditioning, field and temperature dependence of breakdown rate, and…
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This review brings together a body of experimental, theoretical, and simulation work addressing the behaviour of high-field devices and the fundamental process of vacuum arcing, also referred to as vacuum breakdown. Detailed experimental observations and results relating to a wide range of aspects of high-field devices including conditioning, field and temperature dependence of breakdown rate, and the field-holding capability as a function of device geometry and of different materials are presented. The different observations are then addressed theoretically, and with simulation, capturing the sequence of processes that lead to vacuum breakdown and explaining the major observed experimental dependencies. The core of the work described in this review was carried out by a broad multi-disciplinary collaboration in an over a decade-long program to develop high-gradient, 100 MV/m-range, accelerating structures for the CLIC project, a possible future linear-collider high-energy physics facility. Connections are made to the broader linear collider, high-field, and breakdown communities.
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Submitted 6 February, 2025;
originally announced February 2025.
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In-situ observation of field-induced nano-protrusion growth on a carbon-coated tungsten nanotip
Authors:
Guodong Meng,
Yimeng Li,
Roni Aleksi Koitermaa,
Veronika Zadin,
Yonghong Cheng,
Andreas Kyritsakis
Abstract:
Nano-protrusion (NP) on metal surface and its inevitable contamination layer under high electric field is often considered as the primary precursor that leads to vacuum breakdown, which plays an extremely detrimental effect for high energy physics equipment and many other devices. Yet, the NP growth has never been experimentally observed. Here, we conduct field emission (FE) measurements along wit…
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Nano-protrusion (NP) on metal surface and its inevitable contamination layer under high electric field is often considered as the primary precursor that leads to vacuum breakdown, which plays an extremely detrimental effect for high energy physics equipment and many other devices. Yet, the NP growth has never been experimentally observed. Here, we conduct field emission (FE) measurements along with in-situ Transmission Electron Microscopy (TEM) imaging of an amorphous-carbon (a-C) coated tungsten nanotip at various nanoscale vacuum gap distances. We find that under certain conditions, the FE current-voltage (I-V) curves switch abruptly into an enhanced-current state, implying the growth of an NP. We then run field emission simulations, demonstrating that the temporary enhanced-current I-V is perfectly consistent with the hypothesis that a NP has grown at the apex of the tip. This hypothesis is also confirmed by the repeatable in-situ observation of such a nano-protrusion and its continued growth during successive FE measurements in TEM. We tentatively attribute this phenomenon to field-induced biased diffusion of surface a-C atoms, after performing a finite element analysis that excludes the alternative possibility of field-induced plastic deformation.
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Submitted 18 March, 2024;
originally announced March 2024.
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Simulating vacuum arc initiation by coupling emission, heating and plasma processes
Authors:
Roni Koitermaa,
Andreas Kyritsakis,
Tauno Tiirats,
Veronika Zadin,
Flyura Djurabekova
Abstract:
Vacuum arcing poses significant challenges for high-field vacuum devices, underscoring the importance of understanding it for their efficient design. A detailed description of the physical mechanisms involved in vacuum arcing is yet to be achieved, despite extensive research. In this work, we further develop the modelling of the physical processes involved in the initiation of vacuum arcing, start…
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Vacuum arcing poses significant challenges for high-field vacuum devices, underscoring the importance of understanding it for their efficient design. A detailed description of the physical mechanisms involved in vacuum arcing is yet to be achieved, despite extensive research. In this work, we further develop the modelling of the physical processes involved in the initiation of vacuum arcing, starting from field emission and leading to plasma onset. Our model concurrently combines particle-in-cell with Monte Carlo collisions (PIC-MCC) simulations of plasma processes with finite element-based calculations of electron emission and the associated thermal effects. Including the processes of evaporation, impact ionization and direct field ionization allowed us to observe the dynamics of plasma buildup from an initially cold cathode surface. We simulated a static nanotip at various local fields to study the thresholds for thermal runaway and plasma initiation, identifying the significance of various interactions. We found that direct field ionization of neutrals has a significant effect at high fields on the order of 10 GV/m. Furthermore, we find that cathode surface interactions such as evaporation, sputtering and bombardment heating play a major role in the initiation of vacuum arcs. Consequently, the inclusion of these interactions in vacuum arc simulations is imperative.
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Submitted 13 February, 2024;
originally announced February 2024.
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Nano1D: An accurate Computer Vision software for analysis and segmentation of low-dimensional nanostructures
Authors:
Ehsan Moradpur-Tari,
Sergei Vlassov,
Sven Oras,
Mart Ernits,
Elyad Damerchi,
Boris Polyakovc,
Andreas Kyritsakis,
Veronika Zadin
Abstract:
Nanoparticles in microscopy images are usually analyzed qualitatively or manually and there is a need for autonomous quantitative analysis of these objects. In this paper, we present a physics-based computational model for accurate segmentation and geometrical analysis of one-dimensional deformable overlapping objects from microscopy images. This model, named Nano1D, has four steps of preprocessin…
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Nanoparticles in microscopy images are usually analyzed qualitatively or manually and there is a need for autonomous quantitative analysis of these objects. In this paper, we present a physics-based computational model for accurate segmentation and geometrical analysis of one-dimensional deformable overlapping objects from microscopy images. This model, named Nano1D, has four steps of preprocessing, segmentation, separating overlapped objects and geometrical measurements. The model is tested on SEM images of Ag and Au nanowire taken from different microscopes, and thermally fragmented Ag nanowires transformed into nanoparticles with different lengths, diameters, and population densities. It successfully segments and analyzes their geometrical characteristics including lengths and average diameter. The function of the algorithm is not undermined by the size, number, density, orientation and overlapping of objects in images. The main strength of the model is shown to be its ability to segment and analyze overlapping objects successfully with more than 99% accuracy, while current machine learning and computational models suffer from inaccuracy and inability to segment overlapping objects. Benefiting from a graphical user interface, Nano1D can analyze 1D nanoparticles including nanowires, nanotubes, nanorods in addition to other 1D features of microstructures like microcracks, dislocations etc.
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Submitted 10 December, 2023; v1 submitted 27 June, 2023;
originally announced June 2023.
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General form of the tunnelling barrier for nanometrically sharp electron emitters
Authors:
Andreas Kyritsakis
Abstract:
Field electron emission from nanometer-scale objects deviates from the predictions of the classical emission theory as both the electrostatic potential curves within the tunneling region and the image potential deviates from the planar one. This impels the inclusion of additional correction terms in the potential barrier. At the apex of a tip-like rotationally symmetric surface, these terms are pr…
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Field electron emission from nanometer-scale objects deviates from the predictions of the classical emission theory as both the electrostatic potential curves within the tunneling region and the image potential deviates from the planar one. This impels the inclusion of additional correction terms in the potential barrier. At the apex of a tip-like rotationally symmetric surface, these terms are proportional to the (single) local emitter curvature. The present paper generalizes this relation, showing that for any emitter geometry, the coefficient of the correction terms is given by the mean curvature, i.e. the average of the two principal curvatures.
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Submitted 17 March, 2023; v1 submitted 13 July, 2022;
originally announced July 2022.
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Biased self-diffusion on Cu surface due to electric field gradients
Authors:
Jyri Kimari,
Ye Wang,
Andreas Kyritsakis,
Veronika Zadin,
Flyura Djurabekova
Abstract:
Under strong electric fields, an arc of strong current flowing through plasma can link two metal surfaces even in ultra high vacuum. Despite decades of research, the chain of events leading to vacuum arc breakdowns is hitherto unknown. Previously we showed that a tall and sharp Cu nanotip exposed to strong electric fields heats up by field emission currents and eventually melts, evaporating neutra…
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Under strong electric fields, an arc of strong current flowing through plasma can link two metal surfaces even in ultra high vacuum. Despite decades of research, the chain of events leading to vacuum arc breakdowns is hitherto unknown. Previously we showed that a tall and sharp Cu nanotip exposed to strong electric fields heats up by field emission currents and eventually melts, evaporating neutral atoms that can contribute to plasma buildup.
In this work, we investigate by means of molecular dynamics simulations whether surface diffusion biased by the presence of an electric field gradient can provide sufficient mass transport of atoms toward the top of the nanotip to maintain supply of neutrals for feeding plasma. To reach the necessary timescales and to add electric field in MD, we utilized a novel combination of collective variable~-driven hyperdynamics acceleration and coupling to a finite element mesh. In our simulations, we observed biased self-diffusion on Cu surfaces, that can contribute to the continuous replenishment of particle-emitting nanotips. This mechanism implies a need to reduce the rate of surface diffusion in devices that are susceptible to vacuum arcs. Finding suitable alloys or surface treatments that hinder the observed biased diffusion could guide the design of future devices, and greatly improve their efficiency.
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Submitted 19 August, 2022; v1 submitted 26 May, 2022;
originally announced May 2022.
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Polarization characteristics of adatoms self-diffusing on metal surfaces under high electric fields
Authors:
Ekaterina Baibuz,
Andreas Kyritsakis,
Ville Jansson,
Flyura Djurabekova
Abstract:
Although atomic diffusion on metal surfaces under high electric fields has been studied theoretically and experimentally since the 1970s, its accurate and quantitative theoretical description remains a significant challenge. In our previous work, we developed a theoretical framework that describes the atomic dynamics on metal surfaces in the presence of an electric field in terms of the local pola…
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Although atomic diffusion on metal surfaces under high electric fields has been studied theoretically and experimentally since the 1970s, its accurate and quantitative theoretical description remains a significant challenge. In our previous work, we developed a theoretical framework that describes the atomic dynamics on metal surfaces in the presence of an electric field in terms of the local polarization characteristics of the surface at the vicinity of a moving atom. Here, we give a deeper analysis of the physics underlying this framework, introducing and rigorously defining the concept of the effective polarization characteristics (permanent dipole moment $μ$ and polarizability $α$) of a moving atom on a metal surface, which are shown to be the relevant atomic quantities determining the dynamics of a moving atom via a compact equation. We use density functional theory (DFT) to calculate $μ$ and $α$ of a W adatom moving on a W {110} surface, where additional adatoms are present in its vicinity. We analyze the dependence of $μ$ and $α$ and hence the migration barriers under electric fields on the local atomic environments (LAE) of an adatom. We find that the LAE significantly affects $μ$ and $α$ of a moving atom in the limited cases we studied, which implies that further systematic DFT calculations are needed to fully parameterize surface diffusion in terms of energy barriers for long-term large scale simulations, such as our recently developed Kinetic Monte Carlo model for surface diffusion under electric field.
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Submitted 10 January, 2022;
originally announced January 2022.
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Electron cascades and secondary electron emission in graphene under energetic ion irradiation
Authors:
Henrique Vázquez,
Alina Kononov,
Andreas Kyritsakis,
Nikita Medvedev,
André Schleife,
Flyura Djurabekova
Abstract:
Highly energetic ions traversing a two-dimensional material such as graphene produce strong electronic excitations. Electrons excited to energy states above the work function can give rise to secondary electron emission, reducing the amount of energy that remains the graphene after the ion impact. Electrons can either be emitted (kinetic energy transfer) or captured by the passing ion (potential e…
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Highly energetic ions traversing a two-dimensional material such as graphene produce strong electronic excitations. Electrons excited to energy states above the work function can give rise to secondary electron emission, reducing the amount of energy that remains the graphene after the ion impact. Electrons can either be emitted (kinetic energy transfer) or captured by the passing ion (potential energy transfer). To elucidate this behavior that is absent in three-dimensional materials, we simulate the electron dynamics in graphene during the first femtoseconds after ion impact. We employ two conceptually different computational methods: a Monte Carlo (MC) based one, where electrons are treated as classical particles, and time-dependent density functional theory (TDDFT), where electrons are described quantum-mechanically. We observe that the linear dependence of electron emission on deposited energy, emerging from MC simulations, becomes sublinear and closer to the TDDFT values when the electrostatic interactions of emitted electrons with graphene are taken into account via complementary particle-in-cell simulations. Our TDDFT simulations show that the probability for electron capture decreases rapidly with increasing ion velocity, whereas secondary electron emission dominates in the high velocity regime. We estimate that these processes reduce the amount of energy deposited in the graphene layer by 15\,\% to 65\,\%, depending on the ion and its velocity. This finding clearly shows that electron emission must be taken into consideration when modelling damage production in two-dimensional materials under ion irradiation.
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Submitted 30 November, 2020;
originally announced November 2020.
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Effect of dc voltage pulsing on high-vacuum electrical breakdowns near Cu surfaces
Authors:
Anton Saressalo,
Iaroslava Profatilova,
William L. Millar,
Andreas Kyritsakis,
Sergio Calatroni,
Walter Wuensch,
Flyura Djurabekova
Abstract:
Vacuum electrical breakdowns, also known as vacuum arcs, are a limiting factor in many devices that are based on application of high electric fields near their component surfaces. Understanding of processes that lead to breakdown events may help mitigating their appearance and suggest ways for improving operational efficiency of power-consuming devices. Stability of surface performance at a given…
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Vacuum electrical breakdowns, also known as vacuum arcs, are a limiting factor in many devices that are based on application of high electric fields near their component surfaces. Understanding of processes that lead to breakdown events may help mitigating their appearance and suggest ways for improving operational efficiency of power-consuming devices. Stability of surface performance at a given value of the electric field is affected by the conditioning state, i.e. how long the surface was exposed to this field. Hence, optimization of the surface conditioning procedure can significantly speed up the preparatory steps for high-voltage applications. In this article, we use pulsed dc systems to optimize the surface conditioning procedure of copper electrodes, focusing on the effects of voltage recovery after breakdowns, variable repetition rates as well as long waiting times between pulsing runs. Despite the differences in the experimental scales, ranging from $10^{-4}$ s between pulses, up to pulsing breaks of $10^5$ s, the experiments show that the longer the idle time between the pulses, the more probable it is that the next pulse produces a breakdown. We also notice that secondary breakdowns, i.e. those which correlate with the previous ones, take place mainly during the voltage recovery stage. We link these events with deposition of residual atoms from vacuum on the electrode surfaces. Minimizing the number of pauses during the voltage recovery stage reduces power losses due to secondary breakdown events improving efficiency of the surface conditioning.
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Submitted 10 November, 2020; v1 submitted 5 August, 2020;
originally announced August 2020.
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Classification of vacuum arc breakdowns in a pulsed DC system
Authors:
Anton Saressalo,
Iaroslava Profatilova,
Andreas Kyritsakis,
Jan Paszkiewicz,
Sergio Calatroni,
Walter Wuensch,
Flyura Djurabekova
Abstract:
Understanding the microscopic phenomena behind vacuum arc ignition and generation is crucial for being able to control the breakdown rate, thus improving the effectiveness of many high-voltage applications where frequent breakdowns limit the operation. In this work, statistical properties of various aspects of breakdown, such as the number of pulses between breakdowns, breakdown locations and crat…
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Understanding the microscopic phenomena behind vacuum arc ignition and generation is crucial for being able to control the breakdown rate, thus improving the effectiveness of many high-voltage applications where frequent breakdowns limit the operation. In this work, statistical properties of various aspects of breakdown, such as the number of pulses between breakdowns, breakdown locations and crater sizes are studied independently with almost identical Pulsed DC Systems at the University of Helsinki and in CERN. In high-gradient experiments, copper electrodes with parallel plate capacitor geometry, undergo thousands of breakdowns. The results support the classification of the events into primary and secondary breakdowns, based on the distance and number of pulses between two breakdowns. Primary events follow a power law on the log--log scale with the slope $α\approx 1.33$, while the secondaries are highly dependent on the pulsing parameters.
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Submitted 23 January, 2020; v1 submitted 11 November, 2019;
originally announced November 2019.
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Growth mechanism for nanotips in high electric fields
Authors:
Ville Jansson,
Ekaterina Baibuz,
Andreas Kyritsakis,
Simon Vigonski,
Vahur Zadin,
Stefan Parviainen,
Alvo Aabloo,
Flyura Djurabekova
Abstract:
In this work we show using atomistic simulations that the biased diffusion in high electric field gradients creates a mechanism whereby nanotips may start growing from small surface asperities. It has long been known that atoms on a metallic surface have biased diffusion if electric fields are applied and that microscopic tips may be sharpened using fields, but the exact mechanisms have not been w…
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In this work we show using atomistic simulations that the biased diffusion in high electric field gradients creates a mechanism whereby nanotips may start growing from small surface asperities. It has long been known that atoms on a metallic surface have biased diffusion if electric fields are applied and that microscopic tips may be sharpened using fields, but the exact mechanisms have not been well understood. Our Kinetic Monte Carlo simulation model uses a recently developed theory for how the migration barriers are affected by the presence of an electric field. All parameters of the model are physically motivated and no fitting parameters are used. The model has been validated by reproducing characteristic faceting patterns of tungsten surfaces that have in previous experiments been observed to only appear in the presence of strong electric fields. The growth effect is found to be enhanced by increasing fields and temperatures.
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Submitted 7 May, 2020; v1 submitted 12 September, 2019;
originally announced September 2019.
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Tungsten migration energy barriers for surface diffusion: a parameterization for KMC simulations
Authors:
Ville Jansson,
Andreas Kyritsakis,
Simon Vigonski,
Ekaterina Baibuz,
Vahur Zadin,
Alvo Aabloo,
Flyura Djurabekova
Abstract:
We have calculated the migration barriers for surface diffusion on Tungsten. Our results form a self-sufficient parameterization for Kinetic Monte Carlo simulations of arbitrarily rough atomic tungsten surfaces, as well as nanostructures such as nanotips and nanoclusters. The parameterization includes first- and second-nearest neighbour atom jump processes, as well as a third-nearest neighbour exc…
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We have calculated the migration barriers for surface diffusion on Tungsten. Our results form a self-sufficient parameterization for Kinetic Monte Carlo simulations of arbitrarily rough atomic tungsten surfaces, as well as nanostructures such as nanotips and nanoclusters. The parameterization includes first- and second-nearest neighbour atom jump processes, as well as a third-nearest neighbour exchange process. The migration energy barriers of all processes are calculated with the Nudged Elastic Band method. The same attempt frequency for all processes is found sufficient and the value is fitted to Molecular Dynamics simulations. The model is validated by correctly simulating with Kinetic Monte Carlo the energetically favourable W nanocluster shapes, in good agreement with Molecular Dynamics simulations.
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Submitted 17 February, 2020; v1 submitted 8 September, 2019;
originally announced September 2019.
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Ab Initio calculation of field emission from metal surfaces with atomic--scale defects
Authors:
Heikki Toijala,
Kristjan Eimre,
Andreas Kyritsakis,
Vahur Zadin,
Flyura Djurabekova
Abstract:
In this work we combine density functional theory and quantum transport calculations to study the influence of atomic--scale defects on the work function and field emission characteristics of metal surfaces. We develop a general methodology for the calculation of the field emitted current density from nano-featured surfaces, which is then used to study specific defects on a Cu(111) surface. Our re…
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In this work we combine density functional theory and quantum transport calculations to study the influence of atomic--scale defects on the work function and field emission characteristics of metal surfaces. We develop a general methodology for the calculation of the field emitted current density from nano-featured surfaces, which is then used to study specific defects on a Cu(111) surface. Our results show that the inclusion of a defect can significantly locally enhance the field emitted current density. However, this increase is attributed solely to the decrease of the work function due to the defect, with the effective field enhancement being minute. Finally, the Fowler--Nordheim equation is found to be valid when the modified value for the work function is used, with only an approximately constant factor separating the computed currents from those predicted by the Fowler--Nordheim equation.
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Submitted 30 July, 2019;
originally announced July 2019.
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Atomistic behavior of metal surfaces under high electric fields
Authors:
Andreas Kyritsakis,
Ekaterina Baibuz,
Ville Jansson,
Flyura Djurabekova
Abstract:
Combining classical electrodynamics and density functional theory (DFT) calculations, we develop a general and rigorous theoretical framework that describes the energetics of metal surfaces under high electric fields. We show that the behavior of a surface atom in the presence of an electric field can be described by the polarization characteristics of the permanent and field-induced charges in it…
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Combining classical electrodynamics and density functional theory (DFT) calculations, we develop a general and rigorous theoretical framework that describes the energetics of metal surfaces under high electric fields. We show that the behavior of a surface atom in the presence of an electric field can be described by the polarization characteristics of the permanent and field-induced charges in its vicinity. We use DFT calculations for the case of a W adatom on a W{110} surface to confirm the predictions of our theory and quantify its system-specific parameters. Our quantitative predictions for the diffusion of W-on-W{110} under field are in good agreement with experimental measurements. This work is a crucial step towards developing atomistic computational models of such systems for long-term simulations.
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Submitted 16 May, 2019; v1 submitted 23 August, 2018;
originally announced August 2018.
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Thermal runaway of metal nano-tips during intense electron emission
Authors:
A. Kyritsakis,
M. Veske,
K. Eimre,
V. Zadin,
F. Djurabekova
Abstract:
When an electron emitting tip is subjected to very high electric fields, plasma forms even under ultra high vacuum conditions. This phenomenon, known as vacuum arc, causes catastrophic surface modifications and constitutes a major limiting factor not only for modern electron sources, but also for many large-scale applications such as particle accelerators, fusion reactors etc. Although vacuum arcs…
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When an electron emitting tip is subjected to very high electric fields, plasma forms even under ultra high vacuum conditions. This phenomenon, known as vacuum arc, causes catastrophic surface modifications and constitutes a major limiting factor not only for modern electron sources, but also for many large-scale applications such as particle accelerators, fusion reactors etc. Although vacuum arcs have been studied thoroughly, the physical mechanisms that lead from intense electron emission to plasma ignition are still unclear. In this article, we give insights to the atomic scale processes taking place in metal nanotips under intense field emission conditions. We use multi-scale atomistic simulations that concurrently include field-induced forces, electron emission with finite-size and space-charge effects, Nottingham and Joule heating. We find that when a sufficiently high electric field is applied to the tip, the emission-generated heat partially melts it and the field-induced force elongates and sharpens it. This initiates a positive feedback thermal runaway process, which eventually causes evaporation of large fractions of the tip. The reported mechanism can explain the origin of neutral atoms necessary to initiate plasma, a missing key process required to explain the ignition of a vacuum arc. Our simulations provide a quantitative description of in the conditions leading to runaway, which shall be valuable for both field emission applications and vacuum arc studies.
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Submitted 28 March, 2018; v1 submitted 26 September, 2017;
originally announced October 2017.
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Adatom diffusion in high electric fields
Authors:
Ville Jansson,
Ekaterina Baibuz,
Andreas Kyritsakis,
Flyura Djurabekova
Abstract:
Strong electric fields are known to create biased adatom migration on metallic surfaces. We present a Kinetic Monte Carlo model that can simulate adatom migration on a tungsten (W) surface in electric fields. We validate our model by using it to calculate the drift velocity of the adatom at different fields and temperature and comparing the results with experimental data from the literature. We ob…
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Strong electric fields are known to create biased adatom migration on metallic surfaces. We present a Kinetic Monte Carlo model that can simulate adatom migration on a tungsten (W) surface in electric fields. We validate our model by using it to calculate the drift velocity of the adatom at different fields and temperature and comparing the results with experimental data from the literature. We obtain excellent agreement.
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Submitted 14 September, 2017;
originally announced September 2017.
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Dynamic coupling of a finite element solver to large-scale atomistic simulations
Authors:
Mihkel Veske,
Andreas Kyritsakis,
Kristjan Eimre,
Vahur Zadin,
Alvo Aabloo,
Flyura Djurabekova
Abstract:
We propose a method for efficiently coupling the finite element method with atomistic simulations, while using molecular dynamics or kinetic Monte Carlo techniques. Our method can dynamically build an optimized unstructured mesh that follows the geometry defined by atomistic data. On this mesh, different multiphysics problems can be solved to obtain distributions of physical quantities of interest…
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We propose a method for efficiently coupling the finite element method with atomistic simulations, while using molecular dynamics or kinetic Monte Carlo techniques. Our method can dynamically build an optimized unstructured mesh that follows the geometry defined by atomistic data. On this mesh, different multiphysics problems can be solved to obtain distributions of physical quantities of interest, which can be fed back to the atomistic system. The simulation flow is optimized to maximize computational efficiency while maintaining good accuracy. This is achieved by providing the modules for a) optimization of the density of the generated mesh according to requirements of a specific geometry and b) efficient extension of the finite element domain without a need to extend the atomistic one. Our method is organized as an open-source C++ code. In the current implementation, an efficient Laplace equation solver for calculation of electric field distribution near rough atomistic surface demonstrates the capability of the suggested approach.
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Submitted 19 January, 2018; v1 submitted 29 June, 2017;
originally announced June 2017.
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Extension of the General Thermal Field Equation for nanosized emitters
Authors:
A. Kyritsakis,
J. P. Xanthakis
Abstract:
During the previous decade, K.L. Jensen et. al. developed a general analytical model that successfully describes electron emission from metals both in the field and thermionic regimes, as well as in the transition region. In that development, the standard image corrected triangular potential barrier was used. This barrier model is valid only for planar surfaces and therefore cannot be used in gene…
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During the previous decade, K.L. Jensen et. al. developed a general analytical model that successfully describes electron emission from metals both in the field and thermionic regimes, as well as in the transition region. In that development, the standard image corrected triangular potential barrier was used. This barrier model is valid only for planar surfaces and therefore cannot be used in general for modern nanometric emitters. In a recent publication the authors showed that the standard Fowler-Nordheim theory can be generalized for highly curved emitters if a quadratic term is included to the potential model. In this paper we extend this generalization for high temperatures and include both the thermal and intermediate regimes. This is achieved by applying the general method developed by Jensen to the quadratic barrier model of our previous publication. We obtain results that are in good agreement with fully numerical calculations for radii $R>4nm$, while our calculated current density differs by a factor up to 27 from the one predicted by the Jensen's standard General-Thermal-Field (GTF) equation. Our extended GTF equation has application to modern sharp electron sources, beam simulation models and vacuum breakdown theory.
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Submitted 1 March, 2019; v1 submitted 8 September, 2016;
originally announced September 2016.
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A general computational method for electron emission and thermal effects in field emitting nanotips
Authors:
Andreas Kyritsakis,
Flyura Djurabekova
Abstract:
Electron emission from nanometric size emitters becomes of increasing interest due to its involvement to sharp electron sources, vacuum breakdown phenomena and various other vacuum nanoelectronics applications. The most commonly used theoretical tools for the calculation of electron emission are still nowadays the Fowler-Nordheim and the Richardson-Laue-Dushman equations although it has been shown…
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Electron emission from nanometric size emitters becomes of increasing interest due to its involvement to sharp electron sources, vacuum breakdown phenomena and various other vacuum nanoelectronics applications. The most commonly used theoretical tools for the calculation of electron emission are still nowadays the Fowler-Nordheim and the Richardson-Laue-Dushman equations although it has been shown since the 1990's that they are inadequate for nanometrically sharp emitters or in the intermediate thermal-field regime. In this paper we develop a computational method for the calculation of emission currents and Nottingham heat, which automatically distinguishes among different emission regimes, and implements the appropriate calculation method for each. Our method covers all electron emission regimes (thermal, field and intermediate), aiming to maximize the calculation accuracy while minimizing the computational time. As an example, we implemented it in atomistic simulations of the thermal evolution of Cu nanotips under strong electric fields and found that the predicted behaviour of such nanotips by the developed technique differs significantly from estimations obtained based on the Fowler-Nordheim equation. Finally, we show that our tool can be also successfully applied in the analysis of experimental I-V data.
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Submitted 21 November, 2016; v1 submitted 8 September, 2016;
originally announced September 2016.
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Scale invariance of a diodelike tunnel junction
Authors:
H. Cabrera,
D. A. Zanin,
L. G. De Pietro,
Th. Michaels,
P. Thalmann,
U. Ramsperger,
A. Vindigni,
D. Pescia,
A. Kyritsakis,
J. P. Xanthakis,
Fuxiang Li,
Ar. Abanov
Abstract:
We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission. All curves collapse onto one single graph when I is plotted as a function of the single scaling variable Vd^{-λ}, d being varied from a few mm to a few nm, i.e.,…
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We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission. All curves collapse onto one single graph when I is plotted as a function of the single scaling variable Vd^{-λ}, d being varied from a few mm to a few nm, i.e., by about six orders of magnitude. We provide an argument that finds the exponent λ within the singular behavior inherent to the electrostatics of a sharp tip. A simulation of the tunneling barrier for a realistic tip reproduces both the scaling behavior and the small but significant deviations from scaling observed experimentally.
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Submitted 20 March, 2013;
originally announced March 2013.