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Role of filler lanthanide ions on lattice dynamics of phosphide skutterudites RFe$_4$P$_{12}$ (R = La, Ce, and Pr) from first principles
Authors:
Rafaela F. S. Penacchio,
Nicholas Burns,
Maurício B. Estradiote,
Milton S. Torikachvili,
Stefan W. Kycia,
Sérgio L. Morelhão
Abstract:
Phosphide skutterudites primarily show promise for thermoelectric applications due to their chemical stability at high temperatures and relatively low cost. Ion doping and band gap engineering have been used to enhance their typically poor thermoelectric performance, opening avenues for practical applications. Herein, we report a comparative lattice dynamics study on the impact of filler and tempe…
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Phosphide skutterudites primarily show promise for thermoelectric applications due to their chemical stability at high temperatures and relatively low cost. Ion doping and band gap engineering have been used to enhance their typically poor thermoelectric performance, opening avenues for practical applications. Herein, we report a comparative lattice dynamics study on the impact of filler and temperature on the structural and vibrational properties of RFe$_4$P$_{12}$ (R = La, Ce, and Pr) skutterudites. Calculations are performed within the quasi-harmonic approximation, and the results are critically compared against experimental data and other \textit{ab initio} calculations. We found gaps between the heat-carrying acoustic and optical modes, a-o gaps, of approximately 4, -2, and 0.01\,cm$^{-1}$ for La, Ce, and Pr compounds, respectively. These results suggest a filler-induced reduction in the a-o gap is attributed to the softening of the optical modes instead of the conventionally considered upward shift of acoustic modes proposed in the \textit{rattling} scenario. The distinct softening of the optical modes is rationalized by the stiffening of chemical bonds between the filler and host lattice.
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Submitted 1 February, 2024;
originally announced February 2024.
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Proper usage of Scherrer's and Guinier's formulas in X-ray analysis of size distribution in systems of monocrystalline CeO2 nanoparticles
Authors:
Adriana Valério,
Fabiane J. Trindade,
Rafaela F. S. Penacchio,
Bria C. Ramos,
Sérgio Damasceno,
Maurício B. Estradiote,
Cristiane B. Rodella,
André S. Ferlauto,
Stefan W. Kycia,
Sérgio L. Morelhão
Abstract:
Small-angle X-ray scattering (SAXS) and X-ray diffraction (XRD) techniques are widely used as analytical tools in the optimization and control of nanomaterial synthesis processes. In crystalline nanoparticle systems with size distribution, the discrepant size values determined by using SAXS and XRD still lacks a well-established description in quantitative terms. To address fundamental questions,…
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Small-angle X-ray scattering (SAXS) and X-ray diffraction (XRD) techniques are widely used as analytical tools in the optimization and control of nanomaterial synthesis processes. In crystalline nanoparticle systems with size distribution, the discrepant size values determined by using SAXS and XRD still lacks a well-established description in quantitative terms. To address fundamental questions, the isolated effect of size distribution is investigated by SAXS and XRD simulation in polydisperse systems of virtual nanoparticles. It quantitatively answered a few questions, among which the most accessible and reliable size values and what they stand for regarding the size distribution parameters. When a finite size distribution is introduced, the two techniques produce differing results even in perfectly crystalline nanoparticles. Once understood, the deviation in resulting size values can, in principle, resolve two parameters size distributions of crystalline nanoparticles. To demonstrate data analysis procedures in light of this understanding, XRD and SAXS experiments were carried out on a series of powder samples of cubic ceria nanoparticles. Besides changes in the size distribution related to the synthesis parameters, proper comparison of XRD and SAXS results revealed particle-particle interaction effects underneath the SAXS intensity curves. It paves the way for accurate and reliable methodologies to assess size, size dispersion, and degree of crystallinity in synthesized nanoparticles.
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Submitted 27 April, 2023; v1 submitted 1 March, 2022;
originally announced March 2022.
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Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators
Authors:
Celso I. Fornari,
Eduardo Abramof,
Paulo H. O. Rappl,
Stefan W. Kycia,
Sérgio L. Morelhão
Abstract:
Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys.…
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Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys. Chem. C 2019, 123, 24818-24825], a detailed investigation has been performed on the dynamics of defects in epitaxial films of this material, revealing the impact of film/substrate lattice misfit on the films' lateral coherence. Very small lattice misfit (<0.05%) are expected to have no influence on quality of epitaxial system with atomic layers weakly bonded to each other by van der Waals forces, contrarily to what was observed. In this work, we investigate the correlation between lattice misfit and size and morphology of the film crystalline domains. Three-dimensional reciprocal-space maps of film Bragg reflections obtained with synchrotron X-rays are used to visualize the spatial conformation of the crystallographic domains through film thickness, while atomic force microscopy images provide direct information of the domains morphology at the film surface.
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Submitted 5 August, 2020;
originally announced August 2020.
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Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
Authors:
Sergio L. Morelhao,
Stefan Kycia,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflectio…
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Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007\% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.
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Submitted 29 July, 2020;
originally announced July 2020.
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Phonon Scattering Mechanism in Thermoelectric Materials Revised via Resonant X-ray Dynamical Diffraction
Authors:
Adriana Valério,
Rafaela F. S. Penacchio,
Maurício B. Estradiote,
Marli R. Cantarino,
Fernando A. Garcia,
Sérgio L. Morelhão,
Niamh Rafter,
Stefan W. Kycia,
Guilherme A. Calligaris,
Cláudio M. R. Remédios
Abstract:
Engineering of thermoelectric materials requires an understanding of thermal conduction by lattice and electronic degrees of freedom. Filled skutterudites denote a large family of materials suitable for thermoelectric applications where reduced lattice thermal conduction attributed to localized low-frequency vibrations (rattling) of filler cations inside large cages of the structure. In this work,…
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Engineering of thermoelectric materials requires an understanding of thermal conduction by lattice and electronic degrees of freedom. Filled skutterudites denote a large family of materials suitable for thermoelectric applications where reduced lattice thermal conduction attributed to localized low-frequency vibrations (rattling) of filler cations inside large cages of the structure. In this work, a multi-wavelength method of exploiting X-ray dynamical diffraction in single crystals of CeFe$_4$P$_{12}$ is presented and applied to resolve the atomic amplitudes of vibrations. The results suggest that the vibrational dynamics of the whole filler-cage system is the actual active mechanism behind the optimization of thermoelectric properties.
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Submitted 23 June, 2020;
originally announced June 2020.
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Lateral lattice coherence lengths in thin films of bismuth telluride topological insulators, with overview on polarization factors for X-ray dynamical diffraction in monochromator crystals
Authors:
Sergio L. Morelhao,
Stefan Kycia,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
In the supporting information file for article Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C 2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-ray diffraction analysis of thin films were developed or revisited. A simple equation to determine lateral lattice coherence lengths in thin films stands as the main devel…
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In the supporting information file for article Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C 2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-ray diffraction analysis of thin films were developed or revisited. A simple equation to determine lateral lattice coherence lengths in thin films stands as the main development (section S4 - Lateral lattice coherence length in thin films), while X-ray dynamical diffraction simulation in monochromator crystals stands as an interesting overview on how the ratio between $π$ and $σ$ polarization components is affected by whether diffraction takes place under kinematical or dynamical regime (section S3 - Polarization factor).
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Submitted 1 November, 2019;
originally announced November 2019.
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X-ray tools for van der Waals epitaxy of bismuth telluride topological insulator films
Authors:
Stefan Kycia,
Sergio L. Morelhao,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
Potential applications in spintronics and quantum computing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy where the interface coherence between film and substrate is based on vdW bonds instead of strong ionic or covalent bonds. Effects of lattice mismatch on electrical properties and film structure are mor…
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Potential applications in spintronics and quantum computing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy where the interface coherence between film and substrate is based on vdW bonds instead of strong ionic or covalent bonds. Effects of lattice mismatch on electrical properties and film structure are more difficult to control due to the weakness of the vdW forces. Here we present a general x-ray diffraction method to investigate in-plane atomic displacements and lateral lattice coherence length in vdW epitaxy. The method is demonstrated in a series of films grown at different temperatures and pressures of additional tellurium sources, revealing strong intercorrelations between the lateral features as well as with the n/p-types of free charge carries.
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Submitted 27 December, 2018;
originally announced December 2018.
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Magnetic anisotropy in thin films of Prussian blue analogues
Authors:
D. M. Pajerowski,
J. E. Gardner,
M. J. Andrus,
S. Datta,
A. Gomez,
S. W. Kycia,
S. Hill,
D. R. Talham,
M. W. Meisel
Abstract:
The magnetic anisotropy of thin (~ 200 nm) and thick (~ 2 $μ$m) films and of polycrystalline (diameters ~ 60 nm) powders of the Prussian blue analogue Rb$_{0.7}$Ni$_{4.0}$[Cr(CN)$_6$]$_{2.9} \cdot n$H$_2$O, a ferromagnetic material with $T_c \sim 70$ K, have been investigated by magnetization, ESR at 50 GHz and 116 GHz, and variable-temperature x-ray diffraction (XRD). The origin of the anisotropi…
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The magnetic anisotropy of thin (~ 200 nm) and thick (~ 2 $μ$m) films and of polycrystalline (diameters ~ 60 nm) powders of the Prussian blue analogue Rb$_{0.7}$Ni$_{4.0}$[Cr(CN)$_6$]$_{2.9} \cdot n$H$_2$O, a ferromagnetic material with $T_c \sim 70$ K, have been investigated by magnetization, ESR at 50 GHz and 116 GHz, and variable-temperature x-ray diffraction (XRD). The origin of the anisotropic magnetic response cannot be attributed to the direct influence of the solid support, but the film growth protocol that preserves an organized two-dimensional film is important. In addition, the anisotropy does not arise from an anisotropic g-tensor nor from magneto-lattice variations above and below $T_c$. By considering effects due to magnetic domains and demagnetization factors, the analysis provides reasonable descriptions of the low and high field data, thereby identifying the origin of the magnetic anisotropy.
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Submitted 11 December, 2010; v1 submitted 18 June, 2010;
originally announced June 2010.
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Juxtaposition of Spin Freezing and Long Range Order in a Series of Geometrically Frustrated Antiferromagnetic Gadolinium Garnets
Authors:
J. A. Quilliam,
S. Meng,
H. A. Craig,
L. R. Corruccini,
G. Balakrishnan,
O. A. Petrenko,
A. Gomez,
S. W. Kycia,
M. J. P. Gingras,
J. B. Kycia
Abstract:
Specific heat measurements in zero magnetic field are presented on a homologous series of geometrically frustrated, antiferromagnetic, Heisenberg garnet systems. Measurements of Gd3Ga5O12, grown with isotopically pure Gd, agree well with previous results on samples with naturally abundant Gd, showing no ordering features. In contrast, samples of Gd3Te2Li3O12 and Gd3Al5O12 are found to exhibit clea…
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Specific heat measurements in zero magnetic field are presented on a homologous series of geometrically frustrated, antiferromagnetic, Heisenberg garnet systems. Measurements of Gd3Ga5O12, grown with isotopically pure Gd, agree well with previous results on samples with naturally abundant Gd, showing no ordering features. In contrast, samples of Gd3Te2Li3O12 and Gd3Al5O12 are found to exhibit clear ordering transitions at 243 mK and 175 mK respectively. The effects of low level disorder are studied through dilution of Gd3+ with non-magnetic Y3+ in Gd3Te2Li3O12. A thorough structural characterization, using X-ray diffraction, is performed on all of the samples studied. We discuss possible explanations for such diverse behavior in very similar systems.
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Submitted 5 April, 2013; v1 submitted 15 June, 2010;
originally announced June 2010.
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Specific Heat of the Dilute Ising Magnet LiHo$_x$Y$_{1-x}$F$_4$
Authors:
J. A. Quilliam,
C. G. A. Mugford,
A. Gomez,
S. W. Kycia,
J. B. Kycia
Abstract:
We present specific heat data on three samples of the dilute Ising magnet $\HoYLF$ with $x = 0.018$, 0.045 and 0.080. Previous measurements of the ac susceptibility of an $x = 0.045$ sample showed the Ho$^{3+}$ moments to remain dynamic down to very low temperatures and the specific heat was found to have unusually sharp features. In contrast, our measurements do not exhibit these sharp features…
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We present specific heat data on three samples of the dilute Ising magnet $\HoYLF$ with $x = 0.018$, 0.045 and 0.080. Previous measurements of the ac susceptibility of an $x = 0.045$ sample showed the Ho$^{3+}$ moments to remain dynamic down to very low temperatures and the specific heat was found to have unusually sharp features. In contrast, our measurements do not exhibit these sharp features in the specific heat and instead show a broad feature, for all three samples studied, which is qualitatively consistent with a spin glass state. Integrating $C/T$, however, reveals an increase in residual entropy with lower Ho concentration, consistent with recent Monte Carlo simulations showing a lack of spin glass transition for low x.
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Submitted 16 December, 2006;
originally announced December 2006.
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Automatic physical phasing X-ray crystallography
Authors:
Sérgio L. Morelhão,
Luis H. Avanci,
Stefan Kycia
Abstract:
Phase invariants are important pieces of information about the atomic structures of crystals. There are several mathematical methods in X-ray crystallography to estimate phase invariants. The multi-wave diffraction phenomenon offers a unique opportunity of physically measuring phase invariants. In this work, the underneath principals for developing an automatic procedure to extract accurate phas…
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Phase invariants are important pieces of information about the atomic structures of crystals. There are several mathematical methods in X-ray crystallography to estimate phase invariants. The multi-wave diffraction phenomenon offers a unique opportunity of physically measuring phase invariants. In this work, the underneath principals for developing an automatic procedure to extract accurate phase-invariant values are described. A general systematic procedure is demonstrated, in practice, by analyzing intensity data from a KDP crystal.
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Submitted 19 September, 2004;
originally announced September 2004.
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Energy conservation in approximated solutions of multiple beam scattering problems
Authors:
Sérgio L. Morelhão,
Luis H. Avanci,
Stefan Kycia
Abstract:
Solutions in the form of series expansion, as the Born approximation, are very useful for describing time-independent scattering of quantum particles. In this work, it is mathematically demonstred that such solutions, when applied to multiple beam scattering phenomena, can lead to energy violation where the number of incident and scattered particles is not preserved. General basic conditions for…
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Solutions in the form of series expansion, as the Born approximation, are very useful for describing time-independent scattering of quantum particles. In this work, it is mathematically demonstred that such solutions, when applied to multiple beam scattering phenomena, can lead to energy violation where the number of incident and scattered particles is not preserved. General basic conditions for developing consistent solutions of time-dependent multiple beam scattering problems are outlined.
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Submitted 8 September, 2004;
originally announced September 2004.
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Local structure study of In_xGa_(1-x)As semiconductor alloys using High Energy Synchrotron X-ray Diffraction
Authors:
I. -K. Jeong,
F. Mohiuddin-Jacobs,
V. Petkov,
S. J. L. Billinge,
S. Kycia
Abstract:
Nearest and higher neighbor distances as well as bond length distributions (static and thermal) of the In_xGa_(1-x)As (0<x<1) semiconductor alloys have been obtained from high real-space resolution atomic pair distribution functions (PDFs). Using this structural information, we modeled the local atomic displacements in In_xGa_(1-x)As alloys. From a supercell model based on the Kirkwood potential…
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Nearest and higher neighbor distances as well as bond length distributions (static and thermal) of the In_xGa_(1-x)As (0<x<1) semiconductor alloys have been obtained from high real-space resolution atomic pair distribution functions (PDFs). Using this structural information, we modeled the local atomic displacements in In_xGa_(1-x)As alloys. From a supercell model based on the Kirkwood potential, we obtained 3-D As and (In,Ga) ensemble averaged probability distributions. This clearly shows that As atom displacements are highly directional and can be represented as a combination of <100> and <111> displacements. Examination of the Kirkwood model indicates that the standard deviation (sigma) of the static disorder on the (In,Ga) sublattice is around 60% of the value on the As sublattice and the (In,Ga) atomic displacements are much more isotropic than those on the As sublattice. The single crystal diffuse scattering calculated from the Kirkwood model shows that atomic displacements are most strongly correlated along <110> directions.
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Submitted 4 August, 2000;
originally announced August 2000.
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Evidence for charge localization in the ferromagnetic phase of La_(1-x)Ca_(x)MnO_3 from High real-space-resolution x-ray diffraction
Authors:
S. J. L. Billinge,
Th. Proffen,
V. Petkov,
J. L. Sarrao,
S. Kycia
Abstract:
High real-space-resolution atomic pair distribution functions of La_(1-x)Ca_(x)MnO_3 (x=0.12, 0.25 and 0.33) have been measured using high-energy x-ray powder diffraction to study the size and shape of the MnO_6 octahedron as a function of temperature and doping. In the paramagnetic insulating phase we find evidence for three distinct bond-lengths (~ 1.88, 1.95 and 2.15A) which we ascribe to Mn^…
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High real-space-resolution atomic pair distribution functions of La_(1-x)Ca_(x)MnO_3 (x=0.12, 0.25 and 0.33) have been measured using high-energy x-ray powder diffraction to study the size and shape of the MnO_6 octahedron as a function of temperature and doping. In the paramagnetic insulating phase we find evidence for three distinct bond-lengths (~ 1.88, 1.95 and 2.15A) which we ascribe to Mn^{4+}-O, Mn^{3+}-O short and Mn^{3+}-O long bonds respectively. In the ferromagnetic metallic (FM) phase, for x=0.33 and T=20K, we find a single Mn-O bond-length; however, as the metal-insulator transition is approached either by increasing T or decreasing x, intensity progressively appears around r=2.15 and in the region 1.8 - 1.9A suggesting the appearance of Mn^{3+}-O long bonds and short Mn^{4+}-O bonds. This is strong evidence that charge localized and delocalized phases coexist close to the metal-insulator transition in the FM phase.
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Submitted 21 July, 1999;
originally announced July 1999.
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High real-space resolution measurement of the local structure of Ga_1-xIn_xAs using x-ray diffraction
Authors:
V. Petkov,
I-K. Jeong,
J. S. Chung,
M. F. Thorpe,
S. Kycia,
S. J. L. Billinge
Abstract:
High real-space resolution atomic pair distribution functions (PDF)s from the alloy series Ga_1-xIn_xAs have been obtained using high-energy x-ray diffraction. The first peak in the PDF is resolved as a doublet due to the presence of two nearest neighbor bond lengths, Ga-As and In-As, as previously observed using XAFS. The widths of nearest, and higher, neighbor pairs are analyzed by separating…
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High real-space resolution atomic pair distribution functions (PDF)s from the alloy series Ga_1-xIn_xAs have been obtained using high-energy x-ray diffraction. The first peak in the PDF is resolved as a doublet due to the presence of two nearest neighbor bond lengths, Ga-As and In-As, as previously observed using XAFS. The widths of nearest, and higher, neighbor pairs are analyzed by separating the strain broadening from the thermal motion. The strain broadening is five times larger for distant atomic neighbors as compared to nearest neighbors. The results are in agreement with model calculations.
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Submitted 7 June, 1999;
originally announced June 1999.
