A Novel Quasi-One-Dimensional Topological Insulator in Bismuth Iodide $β$-Bi$_4$I$_4$
Authors:
Gabriel Autès,
Anna Isaeva,
Luca Moreschini,
Jens C. Johannsen,
Andrea Pisoni,
Ryo Mori,
Wentao Zhang,
Taisia G. Filatova,
Alexey N. Kuznetsov,
László Forró,
Wouter Van den Broek,
Yeongkwan Kim,
Keun Su Kim,
Alessandra Lanzara,
Jonathan D. Denlinger,
Eli Rotenberg,
Aaron Bostwick,
Marco Grioni,
Oleg V. Yazyev
Abstract:
Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional di…
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Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z$_2$ topological insulator is theoretically predicted and experimentally confirmed in the $β$-phase of quasi-one-dimensional bismuth iodide Bi$_4$I$_4$. The electronic structure of $β$-Bi$_4$I$_4$, characterized by Z$_2$ invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.
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Submitted 20 June, 2016;
originally announced June 2016.
