Robust spin-qubit control in a natural Si-MOS quantum dot using phase modulation
Authors:
Takuma Kuno,
Takeru Utsugi,
Andrew J. Ramsay,
Normann Mertig,
Noriyuki Lee,
Itaru Yanagi,
Toshiyuki Mine,
Nobuhiro Kusuno,
Raisei Mizokuchi,
Takashi Nakajima,
Shinichi Saito,
Digh Hisamoto,
Ryuta Tsuchiya,
Jun Yoneda,
Tetsuo Kodera,
Hiroyuki Mizuno
Abstract:
Silicon quantum dots are one of the most promising candidates for practical quantum computers because of their scalability and compatibility with the well-established complementary metal-oxide-semiconductor technology. However, the coherence time is limited in industry-standard natural silicon because of the $^{29}$Si isotopes, which have non-zero nuclear spin. Here, we protect an isotopically nat…
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Silicon quantum dots are one of the most promising candidates for practical quantum computers because of their scalability and compatibility with the well-established complementary metal-oxide-semiconductor technology. However, the coherence time is limited in industry-standard natural silicon because of the $^{29}$Si isotopes, which have non-zero nuclear spin. Here, we protect an isotopically natural silicon metal-oxide-semiconductor (Si-MOS) quantum dot spin qubit from environmental noise via electron spin resonance with a phase-modulated microwave (MW) drive. This concatenated continuous drive (CCD) method extends the decay time of Rabi oscillations from 1.2 $\mathrm{μs}$ to over 200 $\mathrm{μs}$. Furthermore, we define a protected qubit basis and propose robust gate operations. We find the coherence time measured by Ramsey sequence is improved from 143 ns to 40.7 $μ$s compared to that of the bare spin qubit. The single qubit gate fidelity measured with randomized benchmarking is improved from 95% to 99%, underscoring the effectiveness of the CCD method. The method shows promise for improving control fidelity of noisy qubits, overcoming the qubit variability for global control, and maintaining qubit coherence while idling.
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Submitted 25 March, 2025;
originally announced March 2025.
Thermal circuit model for silicon quantum-dot array structures
Authors:
Takeru Utsugi,
Nobuhiro Kusuno,
Takuma Kuno,
Noriyuki Lee,
Itaru Yanagi,
Toshiyuki Mine,
Shinichi Saito,
Digh Hisamoto,
Ryuta Tsuchiya,
Hiroyuki Mizuno
Abstract:
Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a simple thermal circuit model to describe the heating effect on silicon QD array structures. Noting that the QD array is a periodic structure, we represent it as…
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Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a simple thermal circuit model to describe the heating effect on silicon QD array structures. Noting that the QD array is a periodic structure, we represent it as a thermal distributed-element circuit, forming a thermal transmission line. We validate this model by measuring the electron temperature in a QD array device using Coulomb blockade thermometry, finding that the model effectively reproduces experimental results. This simple and scalable model can be used to develop the thermal design of large-scale silicon-based quantum computers.
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Submitted 19 December, 2024;
originally announced December 2024.
