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Plasmon triggered ultrafast operation of color centers in hBN layers
Authors:
Vasilios Karanikolas,
Takuya Iwasaki,
Joel Henzie,
Naoki Ikeda,
Yusuke Yamauchi,
Yutaka Wakayama,
Takashi Kuroda,
Kenji Watanabe,
Takashi Taniguchi
Abstract:
High-quality emission centers in two-dimensional materials are promising components for future photonic and optoelectronic applications. Carbon-enriched hexagonal boron nitride (hBN:C) layers host atom-like color-center (CC) defects with strong and robust photoemission up to room temperature. Placing the hBN:C layers on top of Ag triangle nanoparticles (NPs) accelerate the decay of the CC defects…
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High-quality emission centers in two-dimensional materials are promising components for future photonic and optoelectronic applications. Carbon-enriched hexagonal boron nitride (hBN:C) layers host atom-like color-center (CC) defects with strong and robust photoemission up to room temperature. Placing the hBN:C layers on top of Ag triangle nanoparticles (NPs) accelerate the decay of the CC defects down to 46 ps from their reference bulk value of 350 ps. The ultrafast decay is achieved due to the efficient excitation of the plasmon modes of the Ag NPs by the near field of the CCs. Simulations of the CCs/Ag NP interaction present that higher Purcell values are expected, although the measured decay of the CCs is limited by the instrument response. The influence of the NP thickness to the Purcell factor of the CCs is analyzed. The ultrafast operation of the CCs in hBN:C layers paves the way for their use in demanding applications, such as single-photon emitters and quantum devices.
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Submitted 16 November, 2022;
originally announced November 2022.
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Machine Learning Study on the Flat-Band States Constructed by Molecular-Orbital Representation with Randomness
Authors:
Takumi Kuroda,
Tomonari Mizoguchi,
Hiromu Araki,
Yasuhiro Hatsugai
Abstract:
We study the characteristic probability density distribution of random flat band models by machine learning. The models considered here are constructed on the basis of the molecular-orbital representation, which guarantees the existence of the macroscopically degenerate zero-energy modes even in the presence of randomness. We find that flat band states are successfully distinguished from conventio…
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We study the characteristic probability density distribution of random flat band models by machine learning. The models considered here are constructed on the basis of the molecular-orbital representation, which guarantees the existence of the macroscopically degenerate zero-energy modes even in the presence of randomness. We find that flat band states are successfully distinguished from conventional extended and localized states, indicating the characteristic feature of the flat band states. We also find that the flat band states can be detected when the target data are defined in the different lattice from the training data, which implies the universal feature of the flat band states constructed by the molecular-orbital representation.
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Submitted 25 March, 2022; v1 submitted 30 November, 2021;
originally announced November 2021.
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Droplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices
Authors:
Massimo Gurioli,
Zhiming Wang,
Armando Rastelli,
Takashi Kuroda,
Stefano Sanguinetti
Abstract:
The long dreamed quantum internet would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots are very at…
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The long dreamed quantum internet would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots are very attractive, as they can be integrated with other photonic and electronic components in miniaturized chips. In the early 1990s two approaches were developed to synthetize self-assembled epitaxial semiconductor quantum dots (QDs), or artificial atoms, namely the Stranski-Krastanov (SK) and the droplet epitaxy (DE) method. Because of its robustness and simplicity, the SK method became the workhorse to achieve several breakthroughs in both fundamental and technological areas. The need for specific emission wavelengths or structural and optical properties has nevertheless motivated further research on the DE method and its more recent development, the local-droplet-etching (LDE), as complementary routes to obtain high quality semiconductor nanostructures. The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometime even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the obtained achievements and the still open challenges, in view of applications in quantum communication and technology.
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Submitted 28 March, 2021;
originally announced March 2021.
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Quantum surface effects in strong coupling dynamics
Authors:
V. Karanikolas,
I. Thanopulos,
J. D. Cox,
T. Kuroda,
J. Inoue,
N. A. Mortensen,
E. Paspalakis,
C. Tserkezis
Abstract:
Plasmons in nanostructured metals are widely utilized to trigger strong light--matter interactions with quantum light sources. While the nonclassical behavior of such quantum emitters (QEs) is well-understood in this context, the role of quantum and surface effects in the plasmonic resonator is usually neglected. Here, we combine the Green's tensor approach with the Feibelman $d$-parameter formali…
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Plasmons in nanostructured metals are widely utilized to trigger strong light--matter interactions with quantum light sources. While the nonclassical behavior of such quantum emitters (QEs) is well-understood in this context, the role of quantum and surface effects in the plasmonic resonator is usually neglected. Here, we combine the Green's tensor approach with the Feibelman $d$-parameter formalism to theoretically explore the influence of quantum surface effects in metal-dielectric layered nanostructures on the relaxation dynamics of a proximal two-level QE. Having identified electron spill-out as the dominant source of quantum effects in jellium-like metals, we focus our study on sodium. Our results reveal a clear splitting in the emission spectrum, indicative of having reached the strong-coupling regime, and, more importantly, non-Markovian relaxation dynamics of the emitter. Our findings establish that strong light--matter coupling is not suppressed by the emergence of nonclassical surface effects in the optical response of the metal.
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Submitted 5 April, 2022; v1 submitted 22 February, 2021;
originally announced February 2021.
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Dark-state impact on the exciton recombination of WS2 monolayers as revealed by multi-time-scale pump-and-probe spectroscopy
Authors:
Takashi Kuroda,
Yusuke Hoshi,
Satoru Masubuchi,
Mitsuhiro Okada,
Ryo Kitaura,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large center-of-mass momentum located outside the light cone of dispersion relations. Efficient relaxation from bright exciton states to dark states suppresses the quantum yie…
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The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large center-of-mass momentum located outside the light cone of dispersion relations. Efficient relaxation from bright exciton states to dark states suppresses the quantum yield of photon emission. In addition, the radiative recombination of excitons is heavily influenced by Auger-type exciton-exciton scattering, which yields another nonradiative relaxation channel at room temperature. Here, we show that Auger-type scattering is promoted not only between (bright) excitons but also between excitons and long-lived dark states. We studied the luminescence dynamics of monolayer WS2 capped with hexagonal BN over broad time ranges of picoseconds to milliseconds using carefully designed pump-and-probe techniques. We observed that luminescence quenching associated with Auger-type scattering occurs on 1-100 microsecond time scales, which thus correspond to the lifetimes of the relevant dark states. The broad distribution of the measured lifetimes implies the impact of various types of long-lived states on the exciton annihilation process.
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Submitted 20 October, 2020;
originally announced October 2020.
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Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $μ$m
Authors:
N. Ha,
T. Mano,
S. Dubos,
T. Kuroda,
Y. Sakuma,
K. Sakoda
Abstract:
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $μ$m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autoc…
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We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $μ$m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs.
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Submitted 20 January, 2020;
originally announced January 2020.
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Current-injection quantum-entangled-pair emitter using droplet epitaxial quantum dots on GaAs(111)A
Authors:
Neul Ha,
Takaaki Mano,
Takashi Kuroda,
Yoshiki Sakuma,
Kazuaki Sakoda
Abstract:
A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot grown by droplet epitaxy. Coincidence histograms obtained at a temperature of 10 K reveal the generation of quantum entangled pairs that have a fidelity to the…
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A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot grown by droplet epitaxy. Coincidence histograms obtained at a temperature of 10 K reveal the generation of quantum entangled pairs that have a fidelity to the Bell pairs of 0.71 +- 0.015, much beyond the classical limit. The quantum nature of the emitted pairs is conserved at temperatures of up to ~65 K, and is essentially limited by the charge carrier confinement in the present dot system. Our study offers a guideline for the fabrication of quantum entangled pair sources suitable for practical use.
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Submitted 20 June, 2019;
originally announced June 2019.
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Detection of radiation torque exerted on an alkali-metal vapor cell
Authors:
Atsushi Hatakeyama,
Runa Yasuda,
Yutaka Goto,
Natsumi Chikakiyo,
Takahiro Kuroda,
Yugo Nagata
Abstract:
We have developed a torsion balance to detect the rotation of a cell containing spin-polarized gaseous atoms to study angular momentum transfer from gaseous atoms to solid. A cesium vapor cell was hung from a thin wire in a vacuum chamber, and irradiated from the bottom with circularly polarized light tuned to the $D_2$ transition to polarize cesium atoms in the cell. By varying the light helicity…
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We have developed a torsion balance to detect the rotation of a cell containing spin-polarized gaseous atoms to study angular momentum transfer from gaseous atoms to solid. A cesium vapor cell was hung from a thin wire in a vacuum chamber, and irradiated from the bottom with circularly polarized light tuned to the $D_2$ transition to polarize cesium atoms in the cell. By varying the light helicity at the resonance frequency of the torsion balance, we induced forced rotational oscillation of the cell and detected radiation torque exerted on the cesium vapor cell through the cesium atoms inside. The torque was particularly large when both hyperfine levels of cesium atoms were optically pumped with application of a longitudinal magnetic field. Further detailed study will provide new insights into spin-transfer processes at the gas-solid interface.
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Submitted 2 July, 2019; v1 submitted 24 March, 2019;
originally announced March 2019.
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Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field
Authors:
M. Manca,
G. Wang,
T. Kuroda,
S. Shree,
A. Balocchi,
P. Renucci,
X. Marie,
M. V. Durnev,
M. M. Glazov,
K. Sakoda,
T. Mano,
T. Amand,
B. Urbaszek
Abstract:
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear p…
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In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Δ$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $μ$eV (-22 %) to +10 $μ$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.
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Submitted 27 March, 2018; v1 submitted 2 February, 2018;
originally announced February 2018.
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Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy
Authors:
N. Ha,
T. Mano,
Y. -N. Wu,
Y. -W. Ou,
S. -J. Cheng,
Y. Sakuma,
K. Sakoda,
T. Kuroda
Abstract:
By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. W…
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By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 micrometer by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of barrier choice.
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Submitted 22 July, 2016;
originally announced July 2016.
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Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots
Authors:
M. Vidal,
M. V. Durnev,
L. Bouet,
T. Amand,
M. M. Glazov,
E. L. Ivchenko,
P. Zhou,
G. Wang,
T. Mano,
T. Kuroda,
X. Marie,
K. Sakoda,
B. Urbaszek
Abstract:
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots.…
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In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots. In magnetic fields applied along the growth axis, we create a strong nuclear spin polarization detected through the positively charged trion X$^+$ Zeeman and Overhauser splittings. The observation of four clearly resolved photoluminescence lines - a unique property of the (111) nanosystems - allows us to measure separately the electron and hole contribution to the Overhauser shift. The hyperfine interaction for holes is found to be about five times weaker than that for electrons. Our theory shows that this ratio depends not only on intrinsic material properties but also on the dot shape and carrier confinement through the heavy-hole mixing, an opportunity for engineering the hole-nuclear spin interaction by tuning dot size and shape.
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Submitted 9 March, 2016;
originally announced March 2016.
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Magneto-spectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots
Authors:
M. V. Durnev,
M. Vidal,
L. Bouet,
T. Amand,
M. M. Glazov,
E. L. Ivchenko,
P. Zhou,
G. Wang,
T. Mano,
N. Ha,
T. Kuroda,
X. Marie,
K. Sakoda,
B. Urbaszek
Abstract:
We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescen…
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We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescence experiments performed on single quantum dots in the Faraday geometry uncover characteristic emission patterns for each excited electron-hole complex, which are very different from the photoluminescence spectra observed in (001)-grown quantum dots. We present a detailed theory of the fine structure and magneto-photoluminescence spectra of X$^{-*}$, X$^{+*}$ and X$^{2-}$ complexes, governed by the interplay between the electron-hole Coulomb exchange interaction and the heavy-hole mixing, characteristic for these quantum dots with a trigonal symmetry. Comparison between experiment and theory of the magneto-photoluminescence allows for precise charge state identification, as well as extraction of electron-hole exchange interaction constants and $g$-factors for the charge carriers occupying excited states.
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Submitted 25 November, 2015;
originally announced November 2015.
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Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion
Authors:
N. Ha,
T. Mano,
Y. L. Chou,
Y. N. Wu,
S. J. Cheng,
J. Bocquel,
P. M. Koenraad,
A. Ohtake,
Y. Sakuma,
K. Sakoda,
T. Kuroda
Abstract:
Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewidth on the dot height. Tall dots with a height of ~30 nm showed broad spectral peaks with an average width as large as ~5 meV, but shallow dots with a…
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Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewidth on the dot height. Tall dots with a height of ~30 nm showed broad spectral peaks with an average width as large as ~5 meV, but shallow dots with a height of ~2 nm showed resolution-limited spectral lines (<120 micro eV). The measured height dependence of the linewidths is in good agreement with Stark coefficients calculated for the experimental shape variation. We attribute the microscopic source of fluctuating electric fields to the random motion of surface charges at the vacuum-semiconductor interface. Our results offer guidelines for creating frequency-locked photon sources, which will serve as key devices for long-distance quantum key distribution.
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Submitted 16 June, 2015; v1 submitted 9 April, 2015;
originally announced April 2015.
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Strain effects on optical properties of tetrapod-shaped CdTe/CdS core-shell nanocrystals
Authors:
Yuanzhao Yao,
Takashi Kuroda,
Dmitry N. Dirin,
Maria S. Sokolikova,
Roman B. Vasiliev
Abstract:
The exciton states of strained CdTe/CdS core-shell tetrapod-shaped nanocrystals were theoretically investigated by the numerical diagonalization of a configuration interaction Hamiltonian based on the single-band effective mass approximation. We found that the inclusion of strain promotes the type-II nature by confining the electrons and holes in nonadjacent regions. This carrier separation is mor…
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The exciton states of strained CdTe/CdS core-shell tetrapod-shaped nanocrystals were theoretically investigated by the numerical diagonalization of a configuration interaction Hamiltonian based on the single-band effective mass approximation. We found that the inclusion of strain promotes the type-II nature by confining the electrons and holes in nonadjacent regions. This carrier separation is more efficient than that with type-II spherical nanocrystals. The strain leads to a small blue shift of the lowest exciton energy. Its magnitude is smaller than the red shift induced by increasing the shell thickness. Moreover, the larger arm diameter reduces the influence of both shell thickness and strain on the exciton energy. Considering the broken symmetry, a randomness induced carrier separation was revealed which is unique to a branched core-shell structure. The calculated shell thickness dependence of the emission energy agrees well with available experimental data.
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Submitted 12 November, 2014;
originally announced November 2014.
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Charge tuning in [111] grown GaAs droplet quantum dots
Authors:
L. Bouet,
M. Vidal,
T. Mano,
N. Ha,
T. Kuroda,
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko,
X. Marie,
T. Amand,
K. Sakoda,
G. Wang,
B. Urbaszek
Abstract:
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence…
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We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
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Submitted 24 July, 2014;
originally announced July 2014.
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Two-photon interference and coherent control of single InAs quantum dot emissions in an Ag-embedded structure
Authors:
X. Liu,
H. Kumano,
H. Nakajima,
S. Odashima,
T. Asano,
T. Kuroda,
I. Suemune
Abstract:
We have recently reported the successful fabrication of bright single-photon sources based on Ag-embedded nanocone structures that incorporate InAs quantum dots. The source had a photon collection efficiency as high as 24.6%. Here we show the results of various types of photonic characterizations of the Ag-embedded nanocone structures that confirm their versatility as regards a broad range of quan…
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We have recently reported the successful fabrication of bright single-photon sources based on Ag-embedded nanocone structures that incorporate InAs quantum dots. The source had a photon collection efficiency as high as 24.6%. Here we show the results of various types of photonic characterizations of the Ag-embedded nanocone structures that confirm their versatility as regards a broad range of quantum optical applications. We measure the first-order autocorrelation function to evaluate the coherence time of emitted photons, and the second-order correlation function, which reveals the strong suppression of multiple photon generation. The high indistinguishability of emitted photons is shown by the Hong-Ou-Mandel-type two-photon interference. With quasi-resonant excitation, coherent population flopping is demonstrated through Rabi oscillations. Extremely high single-photon purity with a $g^{(2)}$(0) value of 0.008 is achieved with $π$-pulse quasi-resonant excitation.
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Submitted 14 July, 2014;
originally announced July 2014.
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Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy
Authors:
X. Liu,
N. Ha,
H. Nakajima,
T. Mano,
T. Kuroda,
B. Urbaszek,
H. Kumano,
I. Suemune,
Y. Sakuma,
K. Sakoda
Abstract:
The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on…
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The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on C3v symmetric InP(111)A. The broad emission spectra cover the O (1.3 micron-m), C (1.55 micron-m), and L (1.6 micron-m) telecom bands. The distribution of the fine-structure splittings is considerably smaller than those reported in previous works on dots at similar wavelengths. The presence of dots with degenerate exciton lines is further confirmed by the optical orientation technique. Thus, our dot systems are expected to serve as efficient entangled photon emitters for long-distance fiber-based quantum key distribution.
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Submitted 17 June, 2014;
originally announced June 2014.
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Hierarchical Nano-Porous Layer with Persistent Superhydrophilicity and High Transparency Etched onto Silicate Glass
Authors:
Takuya Fujima,
Takashi Kuroda,
Eitaro Futakuchi,
Tomohiro Tomita,
Yoshihisa Orai,
Takeshi Sunaoshi
Abstract:
We have developed a hierarchical nano-porous layer (HNL) on a silicate glass by simple alkaline etching method. The HNL has a three-dimensionally-continuous sponge-like structure with a pore size of a few tens of nm at its apparent surface. The pore size gradually decreases from the apparent surface to the interface of the porous layer and the bulk substrate. This HNL gives two significant propert…
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We have developed a hierarchical nano-porous layer (HNL) on a silicate glass by simple alkaline etching method. The HNL has a three-dimensionally-continuous sponge-like structure with a pore size of a few tens of nm at its apparent surface. The pore size gradually decreases from the apparent surface to the interface of the porous layer and the bulk substrate. This HNL gives two significant properties to glass: (1) higher optical transparency than untreated glass by 7% for all over the visible light. (2) long persistent superhydrophilicity with a water contact angle of 5 degree for more than 140 days. The superhydrophilicity also realizes anti-fogging and anti-fouling functionalities.
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Submitted 23 July, 2014; v1 submitted 19 February, 2014;
originally announced February 2014.
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Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field
Authors:
G. Sallen,
S. Kunz,
T. Amand,
L. Bouet,
T. Kuroda,
T. Mano,
D. Paget,
O. Krebs,
X. Marie,
K. Sakoda,
B. Urbaszek
Abstract:
Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pumping of nuclear spins at zero magnetic field in strain free GaAs quantum dot…
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Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pumping of nuclear spins at zero magnetic field in strain free GaAs quantum dots. The strong interaction of a single, optically injected electron spin with the nuclear spins acts as a stabilizing, effective magnetic field (Knight field) on the nuclei. We optically tune the Knight field amplitude and direction. In combination with a small transverse magnetic field, we are able to control the longitudinal and transverse component of the nuclear spin polarization in the absence of lattice strain i.e. nuclear quadrupole effects, as reproduced by our model calculations.
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Submitted 5 September, 2013;
originally announced September 2013.
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Symmetric quantum dots as efficient sources of highly entangled photons
Authors:
T. Kuroda,
T. Mano,
N. Ha,
H. Nakajima,
H. Kumano,
B. Urbaszek,
M. Jo,
M. Abbarachi,
Y. Sakuma,
K. Sakoda,
I. Suemune,
X. Marie,
T. Amand
Abstract:
An ideal source of entangled photon pairs combines the perfect symmetry of an atom with the convenient electrical trigger of light sources based on semiconductor quantum dots. We create a naturally symmetric quantum dot cascade that emits highly entangled photon pairs on demand. Our source consists of strain-free GaAs dots self-assembled on a triangular symmetric (111)A surface. The emitted photon…
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An ideal source of entangled photon pairs combines the perfect symmetry of an atom with the convenient electrical trigger of light sources based on semiconductor quantum dots. We create a naturally symmetric quantum dot cascade that emits highly entangled photon pairs on demand. Our source consists of strain-free GaAs dots self-assembled on a triangular symmetric (111)A surface. The emitted photons strongly violate Bell's inequality and reveal a fidelity to the Bell state as high as 86 (+-2) % without postselection. This result is an important step towards scalable quantum-communication applications with efficient sources.
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Submitted 26 February, 2013;
originally announced February 2013.
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Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
Authors:
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko,
M. Jo,
T. Mano,
T. Kuroda,
K. Sakoda,
S. Kunz,
G. Sallen,
L. Bouet,
X. Marie,
D. Lagarde,
T. Amand,
B. Urbaszek
Abstract:
We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowa…
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We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.
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Submitted 29 November, 2012;
originally announced November 2012.
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Angle-resolved photoemission spectroscopy of Co-based boride superconductor LaCo1.73Fe0.27B2
Authors:
K. Nakayama,
E. Ieki,
Y. Tanaka,
T. Sato,
T. Takahashi,
T. Kuroda,
H. Mizoguchi,
S. W. Kim,
H. Hosono
Abstract:
We have performed angle-resolved photoemission spectroscopy of Co-based boride superconductor LaCo1.73Fe0.27B2 (Tc = 4.1 K), which is isostructural to the 122-type Fe-pnictide superconductor with the pnictogen atom being replaced with boron. We found that the Fermi level is located at a dip in the density of states (DOS) in contrast to Co-pnictide ferromagnets. This reduction in DOS together with…
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We have performed angle-resolved photoemission spectroscopy of Co-based boride superconductor LaCo1.73Fe0.27B2 (Tc = 4.1 K), which is isostructural to the 122-type Fe-pnictide superconductor with the pnictogen atom being replaced with boron. We found that the Fermi level is located at a dip in the density of states (DOS) in contrast to Co-pnictide ferromagnets. This reduction in DOS together with the strong Co 3d-B 2p covalent bonding removes the ferromagnetic order and may cause the superconductivity. The energy bands near the Fermi level show higher three dimensionality and a weaker electron-correlation effect than those of Fe pnictides. The Fermi surface topology is considerably different from that of Fe pnictides, suggesting the difference in the superconducting mechanism between boride and pnictide superconductors.
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Submitted 6 July, 2012;
originally announced July 2012.
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Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots
Authors:
G. Sallen,
B. Urbaszek,
M. M. Glazov,
E. L. Ivchenko,
T. Kuroda,
T. Mano,
S. Kunz,
M. Abbarchi,
K. Sakoda,
D. Lagarde,
A. Balocchi,
X. Marie,
T. Amand
Abstract:
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interpl…
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In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of systems with C_3v point-group symmetry.
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Submitted 30 June, 2011;
originally announced June 2011.
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LaCo2B2: A Co-based layered superconductor with a ThCr2Si2-type structure
Authors:
Hiroshi Mizoguchi,
Toshiaki Kuroda,
Toshio Kamiya,
Hideo Hosono
Abstract:
LaCo2B2 with a ThCr2Si2-type structure composed of alternately stacked La and CoB layers exhibits metallic electrical conductivity and Pauli paramagnetic behavior down to 2K. Bulk superconductivity with a Tc of ~4K emerges upon substitution with dopant elements; i.e., isovalent substitution to form (La1-xYx)Co2B2, or aliovalent substitution to form La(Co1-xFex)2B2. Highly covalent bonding between…
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LaCo2B2 with a ThCr2Si2-type structure composed of alternately stacked La and CoB layers exhibits metallic electrical conductivity and Pauli paramagnetic behavior down to 2K. Bulk superconductivity with a Tc of ~4K emerges upon substitution with dopant elements; i.e., isovalent substitution to form (La1-xYx)Co2B2, or aliovalent substitution to form La(Co1-xFex)2B2. Highly covalent bonding between Co 3d and B 2p levels in the CoB layers, which is caused by the B 2p level being shallower than the Fermi level, removes magnetic ordering from Co 3d electrons even in the undoped samples.
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Submitted 31 July, 2011; v1 submitted 2 March, 2011;
originally announced March 2011.
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Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots
Authors:
Thomas Belhadj,
Thierry Amand,
Alejandro Kunold,
Claire-Marie Simon,
T. Kuroda,
M. Abbarchi,
T. Mano,
K. Sakoda,
Sergej Kunz,
Xavier Marie,
Bernhard Urbaszek
Abstract:
We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k$\cdot$p theory we are able to extract the mixing that arises…
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We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k$\cdot$p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.
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Submitted 2 June, 2010;
originally announced June 2010.
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Bunching visibility for correlated photons from single GaAs quantum dots
Authors:
T. Kuroda,
T. Belhadj,
M. Abbarchi,
C. Mastrandrea,
M. Gurioli,
T. Mano,
N. Ikeda,
Y. Sugimoto,
K. Asakawa,
N. Koguchi,
K. Sakoda,
B. Urbaszek,
T. Amand,
X. Marie
Abstract:
We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a mod…
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We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a model which accounts for Poissonian statistics in the number of excitons, predicting the height of a bunching peak being determined by the inverse of probability of finding more than one exciton.
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Submitted 19 November, 2008;
originally announced November 2008.
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Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy
Authors:
Thomas Belhadj,
Takashi Kuroda,
Claire-Marie Simon,
Thierry Amand,
Takaaki Mano,
Kazuaki Sakoda,
Nobuyuki Koguchi,
Xavier Marie,
Bernhard Urbaszek
Abstract:
We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting…
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We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting (Overhauser shift). We show that the created nuclear polarization is bistable and present a direct measurement of the build-up time of the nuclear polarization in a single GaAs dot in the order of one second.
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Submitted 6 October, 2008; v1 submitted 30 June, 2008;
originally announced June 2008.
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Photon correlation in GaAs self-assembled quantum dots
Authors:
T. Kuroda,
M. Abbarchi,
T. Mano,
K. Watanabe,
M. Yamagiwa,
K. Kuroda,
K. Sakoda,
G. Kido,
N. Koguchi,
C. Mastrandrea,
L. Cavigli,
M. Gurioli,
Y. Ogawa,
F. Minami
Abstract:
We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecti…
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We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecting the formation of exciton complexes. Cross-correlation functions between these lines showed either bunching or antibunching behavior, depending on whether the relevant emission was from a biexciton cascade or a charged exciton recombination.
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Submitted 15 April, 2008;
originally announced April 2008.
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Notes on the bunching peak of g(2) functions for correlated photons from single quantum dots
Authors:
T. Kuroda,
C. Mastransdrea,
M. Abbarchi,
M. Gurioli
Abstract:
Second-order correlation functions for photon pulses associated with exciton-biexciton cascades are theoretically derived. A finite efficiency in photon detection and statistical distribution in exciton numbers are taken into account. It is found that the bunching peak height of photon statistics (g(2)(0)) depends on the mean number of excitons, N, and significant bunching is only detectable at…
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Second-order correlation functions for photon pulses associated with exciton-biexciton cascades are theoretically derived. A finite efficiency in photon detection and statistical distribution in exciton numbers are taken into account. It is found that the bunching peak height of photon statistics (g(2)(0)) depends on the mean number of excitons, N, and significant bunching is only detectable at very low excitation, N<<2.
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Submitted 16 January, 2008;
originally announced January 2008.
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Final-state read-out of exciton qubits by observing resonantly excited photoluminescence in quantum dots
Authors:
K. Kuroda,
T. Kuroda,
K. Watanabe,
T. Mano,
K. Sakoda,
G. Kido,
N. Koguchi
Abstract:
We report on a new approach to detect excitonic qubits in semiconductor quantum dots by observing spontaneous emissions from the relevant qubit level. The ground state of excitons is resonantly excited by picosecond optical pulses. Emissions from the same state are temporally resolved with picosecond time resolution. To capture weak emissions, we greatly suppress the elastic scattering of excita…
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We report on a new approach to detect excitonic qubits in semiconductor quantum dots by observing spontaneous emissions from the relevant qubit level. The ground state of excitons is resonantly excited by picosecond optical pulses. Emissions from the same state are temporally resolved with picosecond time resolution. To capture weak emissions, we greatly suppress the elastic scattering of excitation beams, by applying obliquely incident geometry to the micro photoluminescence set-up. Rabi oscillations of the ground-state excitons appear to be involved in the dependence of emission intensity on excitation amplitude.
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Submitted 27 December, 2006;
originally announced December 2006.
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Self-assembly of laterally aligned GaAs quantum dot pairs
Authors:
M. Yamagiwa,
T. Mano,
T. Kuroda,
T. Tateno,
K. Sakoda,
G. Kido,
N. Koguchi,
F. Minami
Abstract:
We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Photoluminescence spectra from a single quantum dot pair, consisting of a doublet, have been observed. Fin…
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We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Photoluminescence spectra from a single quantum dot pair, consisting of a doublet, have been observed. Finite element energy level calculations of a model quantum dot pair are also presented.
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Submitted 21 July, 2006;
originally announced July 2006.
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Optical transitions in quantum ring complexes
Authors:
T. Kuroda,
T. Mano,
T. Ochiai,
S. Sanguinetti,
K. Sakoda,
G. Kido,
N. Koguchi
Abstract:
Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure inherent in the unique quantum system is analyzed using a micro-photoluminescence technique. One advantage of our growth method is that it presents the possibility of varying the ring geometry. Two samples are prepared and…
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Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure inherent in the unique quantum system is analyzed using a micro-photoluminescence technique. One advantage of our growth method is that it presents the possibility of varying the ring geometry. Two samples are prepared and studied: a single-wall ring and a concentric double-ring. For both samples, highly efficient photoluminescence emitted from a single quantum structure is detected. The spectra show discrete resonance lines, which reflect the quantized nature of the ring-type electronic states. In the concentric double--ring, the carrier confinement in the inner ring and that in the outer ring are identified distinctly as split lines. The observed spectra are interpreted on the basis of single electron effective mass calculations.
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Submitted 24 September, 2005;
originally announced September 2005.
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Coupling of spontaneous emission from GaN/AlN quantum dots into silver surface plasmons
Authors:
Arup Neogi,
Hadis Morkoc,
Takamasa Kuroda,
Atsushi Tackeuchi
Abstract:
We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and continuous-wave photoluminescence measurements, the recombination rate in AlN/GaN QD is shown to be enhanced when spontaneous emission is resonantly coupled to a metal-surface plasmon mode. The exciton recombination p…
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We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and continuous-wave photoluminescence measurements, the recombination rate in AlN/GaN QD is shown to be enhanced when spontaneous emission is resonantly coupled to a metal-surface plasmon mode. The exciton recombination process via Ag-surface plasmon modes is observed to be as much as 3-7 times faster than in normal QD spontaneous emission and depends strongly on the emission wavelength and silver thickness.
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Submitted 3 September, 2004;
originally announced September 2004.
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Picosecond Nonlinear Relaxation of Photoinjected Carriers in a Single GaAs/AlGaAs Quantum Dot
Authors:
T. Kuroda,
S. Sanguinetti,
M. Gurioli,
K. Watanabe,
F. Minami,
N. Koguchi
Abstract:
Photoemission from a single self-organized GaAs/AlGaAs quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive re…
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Photoemission from a single self-organized GaAs/AlGaAs quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive relaxation of multiexcitons. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.
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Submitted 2 August, 2002;
originally announced August 2002.
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Enhancement of spontaneous emission in a quantum well by resonant surface plasmon coupling
Authors:
Arup Neogi,
Chang-Won Lee,
Henry O. Everitt,
Takamasa Kuroda,
Atsushi Tackeuchi,
Eli Yablonovitch
Abstract:
Using time-resolved photoluminescence measurements, the recombination rate in an In$_{0.18}$Ga$_{0.82}$N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than normal QW spontaneous emission. A calculation, based on Fer…
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Using time-resolved photoluminescence measurements, the recombination rate in an In$_{0.18}$Ga$_{0.82}$N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than normal QW spontaneous emission. A calculation, based on Fermi's golden rule, reveals the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QWs placed closer to the surface metal coating.
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Submitted 5 April, 2002;
originally announced April 2002.
