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Detection of diffusion anisotropy from an individual short particle trajectory
Authors:
Kaito Takanami,
Daisuke Taniguchi,
Sawako Enoki,
Masafumi Kuroda,
Yasushi Okada,
Yoshiyuki Kabashima
Abstract:
In parallel with advances in microscale imaging techniques, the fields of biology and materials science have focused on precisely extracting particle properties based on their diffusion behavior. Although the majority of real-world particles exhibit anisotropy, their behavior has been studied less than that of isotropic particles. In this study, we introduce a new method for estimating the diffusi…
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In parallel with advances in microscale imaging techniques, the fields of biology and materials science have focused on precisely extracting particle properties based on their diffusion behavior. Although the majority of real-world particles exhibit anisotropy, their behavior has been studied less than that of isotropic particles. In this study, we introduce a new method for estimating the diffusion coefficients of individual anisotropic particles using short-trajectory data on the basis of a maximum likelihood framework. Traditional estimation techniques often use mean-squared displacement (MSD) values or other statistical measures that inherently remove angular information. Instead, we treated the angle as a latent variable and used belief propagation to estimate it while maximizing the likelihood using the expectation-maximization algorithm. Compared to conventional methods, this approach facilitates better estimation of shorter trajectories and faster rotations, as confirmed by numerical simulations and experimental data involving bacteria and quantum rods. Additionally, we performed an analytical investigation of the limits of detectability of anisotropy and provided guidelines for the experimental design. In addition to serving as a powerful tool for analyzing complex systems, the proposed method will pave the way for applying maximum likelihood methods to more complex diffusion phenomena.
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Submitted 21 May, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Band-Engineered LaFeO$_{3}$-LaNiO$_{3}$ Thin Film Interfaces for Electrocatalysis of Water
Authors:
Rajendra Paudel,
Andricus R. Burton,
Marcelo A. Kuroda,
Byron H. Farnum,
Ryan B. Comes
Abstract:
Transition metal oxides have generated significant interest for their potential as catalysts for the oxygen evolution reaction (OER) in alkaline environments. Iron and nickel-based perovskite oxides have proven particularly promising, with catalytic over-potentials rivaling precious metal catalysts when the alignment of the valence band relative to the OER reaction potential is tuned through subst…
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Transition metal oxides have generated significant interest for their potential as catalysts for the oxygen evolution reaction (OER) in alkaline environments. Iron and nickel-based perovskite oxides have proven particularly promising, with catalytic over-potentials rivaling precious metal catalysts when the alignment of the valence band relative to the OER reaction potential is tuned through substitutional doping or alloying. Here we report that engineering of band alignment in LaFeO$_{3}$/LaNiO$_{3}$ (LFO/LNO) heterostructures via interfacial doping yields greatly enhanced catalytic performance. Using density functional theory modeling, we predict a 0.2 eV valence band offset (VBO) between metallic LNO and semiconducting LFO that significantly lowers the barrier for hole transport through LFO compared to the intrinsic material and make LFO a p-type semiconductor. Experimental band alignment measurements using in situ X-ray photoelectron spectroscopy of epitaxial LFO/LNO heterostructures agree quite well with these predictions, producing a measured VBO of 0.3(1) eV. OER catalytic measurements on the same samples in alkaline solution show an increase in catalytic current density by a factor of ~275 compared to LFO grown on n-type Nb-doped SrTiO$_{3}$. These results demonstrate the power of tuning band alignments through interfacial band engineering for improved catalytic
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Submitted 14 July, 2022;
originally announced July 2022.
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Surface Stability of SrNbO$_{3+δ}$ Grown by Hybrid Molecular Beam Epitaxy
Authors:
Suresh Thapa,
Sydney Provence,
Steve M. Heald,
Marcelo A. Kuroda,
Ryan B. Comes
Abstract:
4d transition metal oxides have emerged as promising materials for numerous applications including high mobility electronics. SrNbO$_{3}$ is one such candidate material, serving as a good donor material in interfacial oxide systems and exhibiting high electron mobility in ultrathin films. However, its synthesis is challenging due to the metastable nature of the d$^{1}$ Nb$^{4+}$ cation and the lim…
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4d transition metal oxides have emerged as promising materials for numerous applications including high mobility electronics. SrNbO$_{3}$ is one such candidate material, serving as a good donor material in interfacial oxide systems and exhibiting high electron mobility in ultrathin films. However, its synthesis is challenging due to the metastable nature of the d$^{1}$ Nb$^{4+}$ cation and the limitations in the delivery of refractory Nb. To date, films have been grown primarily by pulsed laser deposition (PLD), but development of a means to grow and stabilize the material via molecular beam epitaxy (MBE) would enable studies of interfacial phenomena and multilayer structures that may be challenging by PLD. To that end, SrNbO$_{3}$ thin films were grown using hybrid MBE for the first time using a tris(diethalamido)(tert-butylimido) niobium precursor for Nb and an elemental Sr source on GdScO$_{3}$ substrates. Varying thicknesses of insulating SrHfO$_{3}$ capping layers were deposited using a hafnium tert-butoxide precursor for Hf on top of SrNbO$_{3}$ films to preserve the metastable surface. Grown films were transferred in vacuo for X-ray photoelectron spectroscopy to quantify elemental composition, density of states at the Fermi energy, and Nb oxidation state. Ex situ studies by X-ray absorption near edge spectra illustrates the SrHfO$_{3}$ capping plays an important role in preserving the Nb 4d$^{1}$ metastable charge state in atmospheric conditions.
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Submitted 28 October, 2021;
originally announced October 2021.
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Reciprocal microswimmers in a viscoelastic fluid
Authors:
Kento Yasuda,
Mizuki Kuroda,
Shigeyuki Komura
Abstract:
We suggest several reciprocal swimming mechanisms that lead to a locomotion only in viscoelastic fluids. The first situation is to have a difference between the two amplitudes of the oscillatory arm motion for a three-sphere microswimmer. The second situation is when one of the frequencies of the arm motion is twice as large as the other one for a three-sphere microswimmer. The third situation is…
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We suggest several reciprocal swimming mechanisms that lead to a locomotion only in viscoelastic fluids. The first situation is to have a difference between the two amplitudes of the oscillatory arm motion for a three-sphere microswimmer. The second situation is when one of the frequencies of the arm motion is twice as large as the other one for a three-sphere microswimmer. The third situation is when the sphere sizes are different for a two-sphere microswimmer. In all these three cases, the average velocity is proportional to the imaginary part of the complex shear viscosity of a surrounding viscoelastic medium. It is essential for a micromachine to break its structural symmetry in order to swim in a viscoelastic fluid by performing reciprocal body motions.
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Submitted 23 August, 2020; v1 submitted 15 June, 2020;
originally announced June 2020.
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Tunable Contact Resistance in Transition Metal Dichalcogenide Lateral Heterojunctions
Authors:
Adam Pfeifle,
Marcelo A. Kuroda
Abstract:
Contact resistance of semiconducting transition metal dichalcogenides has been shown to decrease in lateral heterojunctions formed with their metallic phases but its origins remain elusive. Here we combine first principles and quantum transport calculations to rationalize the contact resistance of these structures in terms of phase, composition (WTe2, MoTe2, WSe2, and MoSe2), and length of the cha…
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Contact resistance of semiconducting transition metal dichalcogenides has been shown to decrease in lateral heterojunctions formed with their metallic phases but its origins remain elusive. Here we combine first principles and quantum transport calculations to rationalize the contact resistance of these structures in terms of phase, composition (WTe2, MoTe2, WSe2, and MoSe2), and length of the channel. We find that charge injection in metallic 1T'-WTe2/1T'-MoTe2 junctions is nearly ideal as electrode Bloch states remain delocalized through the channel. Mixtures of 1T' selenides and tellurides depart from this scenario due to the momentum mismatch between states in the lead and channel. In semiconducting channels, the large Schottky barriers degrade the electrical contacts. Around band edges, contact resistance values are about an order of magnitude lower than those obtained experimentally suggesting that doping and phase-engineering could be employed to overcome this issue. We predict that transport regime in these junctions shifts from thermionic emission to tunneling for channels shorter than 3 nm at room temperature. We also discuss the presence of states at the metal/semiconductor interfaces. By underpinning mechanisms to control the contact resistance in heterogeneous two-dimensional materials, this work proves valuable towards the development of devices suitable for optoelectronics and phase-change materials applications.
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Submitted 23 December, 2019;
originally announced December 2019.
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Role of quantum confinement and interlayer coupling in CrI$_3$-graphene magnetic tunnel junctions
Authors:
Jonathan J. Heath,
Marcio Costa,
Marco Buongiorno-Nardelli,
Marcelo A. Kuroda
Abstract:
Recent demonstrations of magnetic ordering and spin transport in two-dimensional heterostructures have opened research venues in these material systems. In order to control and enhance the related physical phenomena, quantitative descriptions linking experimental observations to atomic details must be produced. Here we combine first principles and quantum ballistic transport calculations to shed i…
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Recent demonstrations of magnetic ordering and spin transport in two-dimensional heterostructures have opened research venues in these material systems. In order to control and enhance the related physical phenomena, quantitative descriptions linking experimental observations to atomic details must be produced. Here we combine first principles and quantum ballistic transport calculations to shed important insights from an atomistic viewpoint on the underlying mechanisms governing spin transport in graphene/CrI$_3$ junctions. Descriptions of the electronic structure reveal that tunneling is the dominant transport mechanism in these heterostructures and help differentiate intermediate metamagnetic states present in the switching process. We find that quantum confinement and layer-layer interactions are key to describing transport in these two-dimensional systems. Ballistic transport calculations further support these findings and yield magnetoresistance values in remarkable agreement with experiments. The short width of these barriers limits analysis solely based on the bulk complex band structure often employed in the description of magnetic tunnel junctions. Our work devises mechanisms to attain larger tunneling magnetoresistances, proving valuable to the advancement of spin valves in layered heterostructures.
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Submitted 2 October, 2019;
originally announced October 2019.
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Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$
Authors:
T Hajiri,
L. Baldrati,
R. Lebrun,
M. Filianina,
A. Ross,
N. Tanahashi,
M. Kuroda,
W. L. Gan,
T. O. Menteş,
F. Genuzio,
A. Locatelli,
H Asano,
M. Kläui
Abstract:
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magne…
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We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO$_3$/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic field, suggesting that field-induced canting of the AFM spins plays an important role. In contrast, around the coercive field, no detectable SMR signal is observed, indicating that SMR of AFM and canting magnetization components cancel out. Below 50~K, the SMR amplitude increases sizably by a factor of two as compared to room temperature, which likely correlates with the long-range ordering of the Sm ions. Our results show that the SMR is a sensitive technique for non-equilibrium spin system of non-collinear AFM systems.
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Submitted 11 July, 2019;
originally announced July 2019.
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Hydrodynamic interaction between two elastic microswimmers
Authors:
Mizuki Kuroda,
Kento Yasuda,
Shigeyuki Komura
Abstract:
We investigate the hydrodynamic interaction between two elastic swimmers which are composed of three spheres and two harmonic springs. In this model, the natural length of each spring is assumed to undergo a prescribed cyclic change, representing internal states of the swimmer [K. Yasuda et al., J. Phys. Soc. Jpn. 86, 093801 (2017)]. We obtain the average velocities of two identical elastic swimme…
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We investigate the hydrodynamic interaction between two elastic swimmers which are composed of three spheres and two harmonic springs. In this model, the natural length of each spring is assumed to undergo a prescribed cyclic change, representing internal states of the swimmer [K. Yasuda et al., J. Phys. Soc. Jpn. 86, 093801 (2017)]. We obtain the average velocities of two identical elastic swimmers as a function of the distance between them both for structurally asymmetric and symmetric swimmers. We show that the mean velocity of the two swimmers is always smaller than that of a single elastic swimmer. The swimming state of two swimmers can be either bound or unbound depending on the relative phase difference between the two elastic swimmers.
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Submitted 25 March, 2019; v1 submitted 25 January, 2019;
originally announced January 2019.
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Spin absorption at ferromagnetic-metal/platinum-oxide interface
Authors:
Akio Asami,
Hongyu An,
Akira Musha,
Makoto Kuroda,
Kazuya Ando
Abstract:
We investigate the absorption of a spin current at a ferromagnetic-metal/Pt-oxide interface by measuring current-induced ferromagnetic resonance. The spin absorption was characterized by the magnetic damping of the heterostructure. We show that the magnetic damping of a Ni$_{81}$Fe$_{19}$ film is clearly enhanced by attaching Pt-oxide on the Ni$_{81}$Fe$_{19}$ film. The damping enhancement is disa…
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We investigate the absorption of a spin current at a ferromagnetic-metal/Pt-oxide interface by measuring current-induced ferromagnetic resonance. The spin absorption was characterized by the magnetic damping of the heterostructure. We show that the magnetic damping of a Ni$_{81}$Fe$_{19}$ film is clearly enhanced by attaching Pt-oxide on the Ni$_{81}$Fe$_{19}$ film. The damping enhancement is disappeared by inserting an ultrathin Cu layer between the Ni$_{81}$Fe$_{19}$ and Pt-oxide layers. These results demonstrate an essential role of the direct contact between the Ni$_{81}$Fe$_{19}$ and Pt-oxide to induce sizable interface spin-orbit coupling. Furthermore, the spin-absorption parameter of the Ni$_{81}$Fe$_{19}$/Pt-oxide interface is comparable to that of intensively studied heterostructures with strong spin-orbit coupling, such as an oxide interface, topological insulators, metallic junctions with Rashba spin-orbit coupling. This result illustrates strong spin-orbit coupling at the ferromagnetic-metal/Pt-oxide interface, providing an important piece of information for quantitative understanding the spin absorption and spin-charge conversion at the ferromagnetic-metal/metallic-oxide interface.
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Submitted 31 July, 2018;
originally announced July 2018.
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Elastic three-sphere microswimmer in a viscous fluid
Authors:
Kento Yasuda,
Yuto Hosaka,
Mizuki Kuroda,
Ryuichi Okamoto,
Shigeyuki Komura
Abstract:
We discuss the dynamics of a generalized three-sphere microswimmer in which the spheres are connected by two elastic springs. The natural length of each spring is assumed to undergo a prescribed cyclic change. We analytically obtain the average swimming velocity as a function of the frequency of the cyclic change in the natural length. In the low-frequency region, the swimming velocity increases w…
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We discuss the dynamics of a generalized three-sphere microswimmer in which the spheres are connected by two elastic springs. The natural length of each spring is assumed to undergo a prescribed cyclic change. We analytically obtain the average swimming velocity as a function of the frequency of the cyclic change in the natural length. In the low-frequency region, the swimming velocity increases with the frequency and its expression reduces to that of the original three-sphere model by Najafi and Golestanian. In the high-frequency region, conversely, the average velocity decreases with increasing the frequency. Such a behavior originates from the intrinsic spring relaxation dynamics of an elastic swimmer moving in a viscous fluid.
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Submitted 12 July, 2017;
originally announced July 2017.
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Pathway to the PiezoElectronic Transduction Logic Device
Authors:
P. M. Solomon,
B. A. Bryce,
M. A. Kuroda,
R. Keech,
S. Shett,
T. M. Shaw,
M. Copel,
L. -W. Hung,
A. G. Schrott,
C. Armstrong,
M. S. Gordon,
K. B. Reuter,
T. N. Theis,
W. Haensch,
S. M. Rossnagel,
H. Miyazoe,
B. G. Elmegreen,
X. -H. Liu,
S. Trolier-McKinstry,
G. J Martyna,
D. M. Newns
Abstract:
The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the switching energy of present FET devices is intimately connected with the switching voltage, and can no longer be lowered sufficiently, limiting the abilit…
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The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the switching energy of present FET devices is intimately connected with the switching voltage, and can no longer be lowered sufficiently, limiting the ability of current technology to address the challenge. Quantum computing offers a leap forward in capability, but a clear advantage requires algorithms presently developed for only a small set of applications. Therefore, a new, general purpose, classical technology based on a different paradigm is needed to meet the ever increasing demand for data processing.
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Submitted 25 March, 2015;
originally announced March 2015.
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Anisotropic strain in SmSe and SmTe: implications for electronic transport
Authors:
Marcelo A. Kuroda,
Zhengping Jiang,
Michael Povolotskyi,
Gerhard Klimeck,
Dennis M. Newns,
Glenn J. Martyna
Abstract:
Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress induced changes of resistivity. At room temperature these materials exhibit a pressure driven insulator-to-metal transition with resistivity decreasing by up to 7 orders of magnitude over a small pressure range. Thus, the ap…
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Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress induced changes of resistivity. At room temperature these materials exhibit a pressure driven insulator-to-metal transition with resistivity decreasing by up to 7 orders of magnitude over a small pressure range. Thus, the application of only a few GPa's to the piezoresistor (SmX) allows the switching device to perform complex logic. Here we study from first principles the electronic properties of these compounds under uniaxial strain and discuss the consequences on carrier transport. The changes in the band structure show that the piezoresistive response is mostly governed by the reduction of band gap with strain. Furthermore, it becomes optimal when the Fermi level is pinned near the localized valence band. The piezoresistive effect under uniaxial strain which must be taken into account in thin films and other systems with reduced dimensionality is also quantified. Under uniaxial strain we find that the piezoresistive response can be substantially larger than in the isotropic case. Analysis of complex band structure of SmSe yields a tunneling length of the order of 1 nm. The results suggest that the conduction mechanism governing the piezoresistive effect in bulk, i.e.~thermal promotion of electrons, should still be dominant in few-nanometer-thick films.
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Submitted 17 October, 2014;
originally announced October 2014.
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Crown Graphene Nanomeshes: Highly Stable Chelation-Doped Semiconducting Materials
Authors:
Ahmed A. Maarouf,
Razvan A. Nistor,
Ali Afzali-Ardakani,
Marcelo A. Kuroda,
Dennis M. Newns,
Glenn J. Martyna
Abstract:
Graphene nanomeshes (GNM's) formed by the creation of pore superlattices in graphene, are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional eV band gaps. The utility of GNM's would be markedly increased if a scheme to stably and controllably dope them was developed. In this work, a chemically-motivated approach to GNM dopin…
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Graphene nanomeshes (GNM's) formed by the creation of pore superlattices in graphene, are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional eV band gaps. The utility of GNM's would be markedly increased if a scheme to stably and controllably dope them was developed. In this work, a chemically-motivated approach to GNM doping based on selective pore-perimeter passivation and subsequent ion chelation is proposed. It is shown by first-principles calculations that ion chelation leads to stable doping of the passivated GNM's -- both {\it n}- and {\it p}-doping are achieved within a rigid-band picture. Such chelated or ``crown'' GNM structures are stable, high mobility semiconducting materials possessing intrinsic doping-concentration control; these can serve as building blocks for edge-free graphene nanoelectronics including GNM-based complementary metal oxide semiconductor (CMOS)-type logic switches.
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Submitted 15 November, 2013;
originally announced November 2013.
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Experimental realization of directed percolation criticality in turbulent liquid crystals
Authors:
Kazumasa A. Takeuchi,
Masafumi Kuroda,
Hugues Chaté,
Masaki Sano
Abstract:
This is a comprehensive report on the phase transition between two turbulent states of electroconvection in nematic liquid crystals, which was recently found by the authors to be in the directed percolation (DP) universality class [K. A. Takeuchi et al., Phys. Rev. Lett. 99, 234503 (2007)]. We further investigate both static and dynamic critical behavior of this phase transition, measuring a tot…
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This is a comprehensive report on the phase transition between two turbulent states of electroconvection in nematic liquid crystals, which was recently found by the authors to be in the directed percolation (DP) universality class [K. A. Takeuchi et al., Phys. Rev. Lett. 99, 234503 (2007)]. We further investigate both static and dynamic critical behavior of this phase transition, measuring a total of 12 critical exponents, 5 scaling functions, and 8 scaling relations, all in full agreement with those characterizing the DP class in 2+1 dimensions. Developing an experimental technique to create a seed of topological-defect turbulence by pulse laser, we confirm in particular the rapidity symmetry, which is a basic but nontrivial consequence of the field-theoretic approach to DP. This provides the first clear experimental realization of this outstanding, truly out-of-equilibrium universality class, dominating most phase transitions into an absorbing state.
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Submitted 24 July, 2009;
originally announced July 2009.
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High field electro-thermal transport in metallic carbon nanotubes
Authors:
Marcelo A. Kuroda,
Jean Pierre Leburton
Abstract:
We describe the electro-thermal transport in metallic carbon nanotubes (m-CNTs) by a semi-classical approach that takes into account the high-field dynamical interdependence between charge carrier and phonon populations. Our model is based on the self-consistent solution of the Boltzmann transport equation and the heat equation mediated by a phonon rate equation that accounts for the onset of no…
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We describe the electro-thermal transport in metallic carbon nanotubes (m-CNTs) by a semi-classical approach that takes into account the high-field dynamical interdependence between charge carrier and phonon populations. Our model is based on the self-consistent solution of the Boltzmann transport equation and the heat equation mediated by a phonon rate equation that accounts for the onset of non-equilibrium (optical) phonons in the high-field regime. Given the metallic nature of the nanostructures, a key ingredient of the model is the assumption of local thermalization of charge carriers. Our theory remarkably reproduces the room temperature electrical characteristics of m-CNTs on substrate and free standing (suspended), shedding light on charge-heat transport in these one dimensional nanostructures. In particular, the negative differential resistance observed in suspended m-CNTs under electric stress is attributed to inhomogeneous field profile induced by self-heating rather than the presence of hot phonons.
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Submitted 7 July, 2009;
originally announced July 2009.
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Carrier mean free path and temperature imbalance in mesoscopic wires
Authors:
Marcelo Kuroda,
Jean-Pierre Leburton
Abstract:
Non-coherent electronic transport in metallic nanowires exhibits different carrier temperatures for the non-equilibrium forward and backward populations in the presence of electric fields. Depending on the mean free path that characterizes inter-branch carrier backscattering transport regimes vary between the ballistic and diffusive limits. In particular, we show that the simultaneous measuremen…
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Non-coherent electronic transport in metallic nanowires exhibits different carrier temperatures for the non-equilibrium forward and backward populations in the presence of electric fields. Depending on the mean free path that characterizes inter-branch carrier backscattering transport regimes vary between the ballistic and diffusive limits. In particular, we show that the simultaneous measurements of the electrical characteristics and the carrier distribution function offer a direct way to extract the carrier mean free path even when it is comparable to the conductor length. Our model is in good agreement with the experimental work on copper nanowires by Pothier {\it et al.} [Phys. Rev. Lett. {\bf 79}, 3490 (1997)] and provides an elegant interpretation of the inhomogeneous thermal broadening observed in the local carrier distribution function as well as its scaling with external bias.
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Submitted 13 March, 2009;
originally announced March 2009.
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Restricted Wiedemann-Franz law and vanishing thermoelectric power in one-dimensional conductors
Authors:
Marcelo Kuroda,
Jean-Pierre Leburton
Abstract:
In one-dimensional (1D) conductors with linear E-k dispersion (Dirac systems) intrabranch thermalization is favored by elastic electron-electron interaction in contrast to electron systems with a nonlinear (parabolic) dispersion. We show that under external electric fields or thermal gradients the carrier populations of different branches, treated as Fermi gases, have different temperatures as a…
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In one-dimensional (1D) conductors with linear E-k dispersion (Dirac systems) intrabranch thermalization is favored by elastic electron-electron interaction in contrast to electron systems with a nonlinear (parabolic) dispersion. We show that under external electric fields or thermal gradients the carrier populations of different branches, treated as Fermi gases, have different temperatures as a consequence of self-consistent carrier-heat transport. Specifically, in the presence of elastic phonon scattering, the Wiedemann-Franz law is restricted to each branch with its specific temperature and is characterized by twice the Lorenz number. In addition thermoelectric power vanishes due to electron-hole symmetry, which is validated by experiment.
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Submitted 29 July, 2008;
originally announced July 2008.
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Directed percolation criticality in turbulent liquid crystals
Authors:
Kazumasa A. Takeuchi,
Masafumi Kuroda,
Hugues Chaté,
Masaki Sano
Abstract:
We experimentally investigate the critical behavior of a phase transition between two topologically different turbulent states of electrohydrodynamic convection in nematic liquid crystals. The statistical properties of the observed spatiotemporal intermittency regimes are carefully determined, yielding a complete set of static critical exponents in full agreement with those defining the directed…
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We experimentally investigate the critical behavior of a phase transition between two topologically different turbulent states of electrohydrodynamic convection in nematic liquid crystals. The statistical properties of the observed spatiotemporal intermittency regimes are carefully determined, yielding a complete set of static critical exponents in full agreement with those defining the directed percolation class in (2+1) dimensions. This constitutes the first clear and comprehensive experimental evidence of an absorbing phase transition in this prominent non-equilibrium universality class.
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Submitted 28 June, 2007;
originally announced June 2007.
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Joule heating induced negative differential resistance in free standing metallic carbon nanotubes
Authors:
M. A. Kuroda,
J. -P. Leburton
Abstract:
The features of the $IV$ characteristics of metallic carbon nanotubes (m-NTs) in different experimental setups are studied using semi-classical Boltzmann transport equation together with the heat dissipation equation to account for significant thermal effects at high electric bias. Our model predicts that the shape of the m-NT characteristics is basically controlled by heat removal mechanisms. I…
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The features of the $IV$ characteristics of metallic carbon nanotubes (m-NTs) in different experimental setups are studied using semi-classical Boltzmann transport equation together with the heat dissipation equation to account for significant thermal effects at high electric bias. Our model predicts that the shape of the m-NT characteristics is basically controlled by heat removal mechanisms. In particular we show that the onset of negative differential resistance in free standing nanotubes finds its origins in strong transport nonlinearities associated with poor heat removal unlike in substrate-supported nanotubes.
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Submitted 30 March, 2006;
originally announced March 2006.
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Non-linear transport and heat dissipation in metallic carbon nanotubes
Authors:
M. A. Kuroda,
J. -P. Leburton
Abstract:
We show that the local temperature dependence of thermalized electron and phonon populations along metallic carbon nanotubes is the main reason behind this non-linear transport characteristics in the high bias regime. Our model that considers optical and zone boundary phonon emission as well as absorption by charge carriers is based on the solution of the Boltzmann transport equation that assume…
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We show that the local temperature dependence of thermalized electron and phonon populations along metallic carbon nanotubes is the main reason behind this non-linear transport characteristics in the high bias regime. Our model that considers optical and zone boundary phonon emission as well as absorption by charge carriers is based on the solution of the Boltzmann transport equation that assumes a local temperature along the nanotube, determined self-consistently with the heat transport equation. By using realistic transport parameters, our results not only reproduce experimental data for electronic transport, but also provide a coherent interpretation of thermal breakdown under electric stress. In particular, electron and phonon thermalization prohibits ballistic transport in short nanotubes.
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Submitted 8 July, 2005;
originally announced July 2005.
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Spin relaxation in n-doped gallium arsenide due to impurity and electron-electron Elliot-Yafet scattering
Authors:
P. I. Tamborenea,
M. A. Kuroda,
F. L. Bottesi
Abstract:
We calculate the spin relaxation time of conduction electrons in n-doped bulk gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with disimilar dependences on doping density and temperature. Our theoretical…
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We calculate the spin relaxation time of conduction electrons in n-doped bulk gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with disimilar dependences on doping density and temperature. Our theoretical results are compared with experimentally measured spin relaxation times in gallium arsenide.
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Submitted 20 March, 2003;
originally announced March 2003.
