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Ferrotronics for the creation of band gaps in Graphene
Authors:
Qifang Wan,
Zhuocong Xiao,
Ahmed Kursumovic,
Judith. L. MacManus-Driscoll,
Colm Durkan
Abstract:
We experimentally demonstrate a simple graphene/ ferrolectric device, termed Ferrotronic (electronic effect from ferroelectric) device in which the band-structure of single-layer graphene is modified. The device architecture consists of graphene deposited on a ferroelectric substrate which encodes a periodic surface potential achieved through domain engineering. This structure takes advantage of t…
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We experimentally demonstrate a simple graphene/ ferrolectric device, termed Ferrotronic (electronic effect from ferroelectric) device in which the band-structure of single-layer graphene is modified. The device architecture consists of graphene deposited on a ferroelectric substrate which encodes a periodic surface potential achieved through domain engineering. This structure takes advantage of the nature of conduction through graphene to modulate the Fermi velocity of the charge carriers by the variations in surface potential, leading to the emergence of energy mini-bands and a band gap at the superlattice Brillouin zone boundary. Our work represents a simple route to building circuits whose functionality is controlled by the underlying substrate.
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Submitted 14 December, 2021;
originally announced December 2021.
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Strong pinning at high growth rates in Rare Earth Barium Cuprate
Authors:
J. Feighan,
M. H. Lai,
A. Kursumovic,
D. Zhang,
H. Wang,
J. H. Lee,
S Moon,
J. L. MacManus-Driscoll
Abstract:
We present a simple liquid assisted processing (LAP) method, to be used in-situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm/min with a single plume) and strong pinning (improved x 5-10 over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date. LAP…
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We present a simple liquid assisted processing (LAP) method, to be used in-situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm/min with a single plume) and strong pinning (improved x 5-10 over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date. LAP enhances the kinetics of the film growth so that good crystalline perfection can be achieved at up to 60 x faster growth rates than normal, while also enabling artificial pinning centres to be self assembled into fine nanocolumns. In addition, LAP allows for RE mixing (80% of Y with 20% of Yb, Sm, or Yb+Sm), creating effective point-like disorder within the REBCO lattice and which leads to strongly improved pinning at 30 K and below. Overall, LAP is a simple method which could be adopted by other in-situ physical or vapour deposition methods (i.e PLD, MOCVD, evaporation, etc) to significantly enhance both growth rate and performance.
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Submitted 16 November, 2020; v1 submitted 2 November, 2020;
originally announced November 2020.
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Structure property relationship in $(TiZrNbCu)_{1-x}Ni_x$ metallic glasses
Authors:
Emil Babić,
Damir Pajić,
Krešo Zadro,
Katica Biljaković,
Vesna Mikšić Trontl,
Petar Pervan,
Damir Starešinić,
Ignacio A. Figueroa,
Ahmed Kuršumović,
Štefan Michalik,
Andrea Lachová,
György Remenyi,
Ramir Ristić
Abstract:
The atomic structure, electronic structure and physical properties of $(TiZrNbCu)_{(1-x)}Ni_x$ (x $\leq$ 0.5) metallic glasses (MG) were studied in both the high-entropy (0<x<0.35) and the higher Ni concentration range (x $\geq$ 0.35). Atomic structure studies performed with X-ray diffraction and synchrotron powder diffraction provided average atomic volumes, structure factors, radial distribution…
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The atomic structure, electronic structure and physical properties of $(TiZrNbCu)_{(1-x)}Ni_x$ (x $\leq$ 0.5) metallic glasses (MG) were studied in both the high-entropy (0<x<0.35) and the higher Ni concentration range (x $\geq$ 0.35). Atomic structure studies performed with X-ray diffraction and synchrotron powder diffraction provided average atomic volumes, structure factors, radial distribution functions, coordination numbers and packing densities. Electronic structure studies performed using photoemission spectroscopy and low-temperature specific heat provided information about the electronic density of states within the valence band and at the Fermi level and also about interatomic bonding and atomic vibrations (from the Debye temperature and the boson peak). Variations of both atomic structure and electronic structure with x showed a clear change for x $\geq$ 0.35, which corresponds to a valence electron number $\geq$ 7.4. All physical properties, namely thermal stability parameters, Debye temperatures, boson peaks, magnetic, elastic and electronic transport properties change their concentration-dependence for x$\geq$ 0.35. The results are compared with those for binary and ternary MGs of the same elements.
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Submitted 22 June, 2018;
originally announced June 2018.
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Properties of $(TiZrNbCu)_{1-x}$$Ni_{x}$ Metallic Glasses
Authors:
Ignacio A. Figueroa,
Ramir Ristić,
Ahmed Kuršumović,
Katica Biljaković,
Damir Starešinić,
Damir Pajić,
György Remenyi,
Emil Babić
Abstract:
Recent studies (J. Alloys Compd. 695 (2017) 2661) of the electronic structure and properties of $(TiZrNbCu)_{1-x}$$Ni_{x}$ (x$\leq$0.25) amorphous high entropy alloys (a-HEA) have been extended to x=0.5 in order to compare behaviours of a-HEA and conventional Ni-base metallic glasses (MG). The amorphous state of all samples was verified by thermal analysis and X-ray diffraction (XRD). XRD indicate…
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Recent studies (J. Alloys Compd. 695 (2017) 2661) of the electronic structure and properties of $(TiZrNbCu)_{1-x}$$Ni_{x}$ (x$\leq$0.25) amorphous high entropy alloys (a-HEA) have been extended to x=0.5 in order to compare behaviours of a-HEA and conventional Ni-base metallic glasses (MG). The amorphous state of all samples was verified by thermal analysis and X-ray diffraction (XRD). XRD indicated a probable change in local atomic arrangements, i.e. short-range-order (SRO) for x$\geq$0.35. Simultaneously, thermal parameters, such as the first crystallization temperature $T_{x}$ and the liquidus temperature showed a tendency to saturate for x$\geq$0.35 . The same tendency also appeared in the magnetic susceptibility $χ_{exp}$ and the linear term in the low temperature specific heat γ. The Debye temperatures and Youngs moduli also tend to saturate for x$\geq$0.35. These unusual changes in SRO and all properties within the amorphous phase seem correlated with the change of valence electron number (VEC) on increasing x.
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Submitted 14 February, 2018; v1 submitted 21 August, 2017;
originally announced August 2017.
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Electronic structure and properties of (TiZrNbCu)_1-xNi_x high entropy amorphous alloys
Authors:
Katica Biljaković,
György Remenyi,
Ignacio A. Figueroa,
Ramir Ristić,
Damir Pajić,
Ahmed Kuršumović,
Damir Starešinić,
Krešo Zadro,
Emil Babić
Abstract:
A comprehensive study of selected properties of four (TiZrNbCu)_1-xNi_x (x \le 0.25) amorphous high entropy alloys (a-HEA) has been performed. The samples were ribbons about 20 \mum thick and their fully amorphous state was verified by X-ray diffraction and thermal analysis. The surface morphology, precise composition and the distribution of components were studied with a Scanning electron microsc…
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A comprehensive study of selected properties of four (TiZrNbCu)_1-xNi_x (x \le 0.25) amorphous high entropy alloys (a-HEA) has been performed. The samples were ribbons about 20 \mum thick and their fully amorphous state was verified by X-ray diffraction and thermal analysis. The surface morphology, precise composition and the distribution of components were studied with a Scanning electron microscope (SEM) with an energy dispersive spectroscopy (EDS) attachment. The properties selected were the melting temperature (T_m), the low temperature specific heat (LTSH), the magnetic susceptibility χ_exp and the Young^,s modulus (E). Whereas LTSH and χ_exp were measured for the as-cast samples, E was measured both for as-cast samples and relaxed samples (after a short anneal close to the glass transition temperature). The LTSH showed that the electronic density of states at the Fermi level, N_0(E_F), decreases with increasing x, whereas the Debye temperature (θ_D) increases with x. This is similar to what is observed in binary and ternary amorphous alloys of early transition metals (TE) with late transition metals (TL) and indicates that N_0(E_F) is dominated by the d-electrons of the TE. The LTSH also showed the absence of superconductivity down to 1.8K and indicated the emergence of the Boson peak above 4K in all alloys.The free-electron like paramagnetic contribution to χ_exp also decreases with x, whereas E, like θ_D, increases with x, indicating enhanced interatomic bonding on addition of Ni. The applicability of the rule of mixtures to these and other similar HEAs is briefly discussed.
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Submitted 18 November, 2016;
originally announced November 2016.
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Reaction method control of impurity scattering in C-doped MgB2, proving the role of defects besides C substitution level
Authors:
S K Chen,
K Y Tan,
A S Halim,
X Xu,
K S B De Silva,
W K Yeoh,
S X Dou,
A Kursumovic,
J L MacManus-Driscoll
Abstract:
In this study, Si and C were incorporated into polycrystalline MgB2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40K, Rho A(40K), is higher for the SiC reacted samples regardless of carbon (C) substitution level, indicating larger intragrai…
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In this study, Si and C were incorporated into polycrystalline MgB2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40K, Rho A(40K), is higher for the SiC reacted samples regardless of carbon (C) substitution level, indicating larger intragrain scattering because of the simultaneous reaction between Mg and SiC and carbon substitution during the formation of MgB2. In addition, because of the cleaner reaction route for the SiC reacted samples, the calculated active area that carries current, AF, is twice that of the (Si+C) samples. On the other hand, the upper critical field, Hc2, was similar for both sets of samples despite their different C substitution levels which proves the importance of defect scattering in addition to C substitution level. Hence, the form of the precursor reactants is critical for tuning the form of Hc2(T).
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Submitted 30 October, 2013;
originally announced October 2013.
