-
Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime
Authors:
I. L. Drichko,
A. A. Dmitriev,
V. A. Malysh,
I. Yu. Smirnov,
Yu. M. Galperin,
H. von Känel,
M. Kummer,
G. Isella,
D. Chrastina
Abstract:
The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the p-GeSi/Ge/GeSi structures with quantum wells in a wide frequency range (30-1200 MHz). The experimental frequency dependences of the real part of ac conductance $σ_1$ h…
▽ More
The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the p-GeSi/Ge/GeSi structures with quantum wells in a wide frequency range (30-1200 MHz). The experimental frequency dependences of the real part of ac conductance $σ_1$ have been interpreted on the basis of the model presuming hops between localized electronic states belonging to isolated clusters. At high frequencies, dominating clusters are pairs of close states; upon a decrease in frequency, large clusters that merge into an infinite percolation cluster as the frequency tends to zero become important. In this case, the frequency dependences of the ac conductance can be represented by a universal curve. The scaling parameters and their magnetic-field dependence have been determined.
△ Less
Submitted 12 December, 2018;
originally announced December 2018.
-
Effective g factor of 2D holes in strained Ge quantum wells
Authors:
I. L. Drichko,
A. A. Dmitriev,
V. A. Malysh,
I. Yu. Smirnov,
H. von Känel,
M. Kummer,
D. Chrastina,
G. Isella
Abstract:
The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular magnetic fields up to $8~\text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the…
▽ More
The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular magnetic fields up to $8~\text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the $\mathrm{g}_{\perp}$-factor of each sample was determined. The $\mathrm{g}_{\perp}$-factor was found to be decreasing approximately linearly with hole density. This effect is attributed to non-parabolicity of the valence band.
△ Less
Submitted 11 April, 2018;
originally announced April 2018.
-
In-plane magnetic field effect on hole cyclotron mass and $g_z$ factor in high-mobility SiGe/Ge/SiGe structures
Authors:
I. L. Drichko,
V. A. Malysh,
I. Yu. Smirnov,
L. E. Golub,
S. A. Tarasenko,
A. V. Suslov,
O. A. Mironov,
M. Kummer,
H. von Känel
Abstract:
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt…
▽ More
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.
△ Less
Submitted 13 November, 2014;
originally announced November 2014.
-
Contactless Measurement of AC Conductance in Quantum Hall Structures
Authors:
I. L. Drichko,
A. M. Diakonov,
V. A. Malysh,
I. Yu. Smirnov,
Y. M. Galperin,
N. D. Ilyinskaya,
A. A. Usikova,
M. Kummer,
H. von Känel
Abstract:
We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in…
▽ More
We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use the fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized $p$-SiGe/Ge/SiGe heterostructure.
△ Less
Submitted 10 July, 2014;
originally announced July 2014.
-
Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields
Authors:
I. L. Drichko,
V. A. Malysh,
I. Yu. Smirnov,
A. V. Suslov,
O. A. Mironov,
M. Kummer,
H. von Känel
Abstract:
The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at tempera…
▽ More
The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at temperatures of 0.3 - 5.8 K and magnetic fields up to 18 T at various SAW intensities. In the IQHE regime, in minima of the conductivity oscillations with small filling factors, holes are localized. The ac conductivity is of the hopping nature and can be described within the "two-site" model. Furthermore, the dependence of the ac conductivity on the electric field of the SAW was determined. The manifestation of non-linear effects is interpreted in terms of nonlinear percolation-based conductivity.
△ Less
Submitted 11 December, 2013;
originally announced December 2013.
-
Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure
Authors:
I. L. Drichko,
A. M. Diakonov,
E. V. Lebedeva,
I. Yu. Smirnov,
O. A. Mironov,
M. Kummer,
H. von Känel
Abstract:
Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW inte…
▽ More
Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time $τ_{\varepsilon}$ and the deformation potential constant determined.
△ Less
Submitted 15 June, 2009;
originally announced June 2009.
