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Complex electronic topography and magnetotransport in an in-plane ferromagnetic kagome metal
Authors:
Anup Pradhan Sakhya,
Richa Pokharel Madhogaria,
Barun Ghosh,
Nabil Atlam,
Milo Sprague,
Mazharul Islam Mondal,
Himanshu Sheokand,
Arun K. Kumay,
Shirin Mozaffari,
Rui Xue,
Yong P. Chen,
David G. Mandrus,
Arun Bansil,
Madhab Neupane
Abstract:
The intricate interplay between flat bands, Dirac cones, and magnetism in kagome materials has recently attracted significant attention from materials scientists, particularly in compounds belonging to the RMn6Sn6 family (R = Sc, Y, rare earths), due to their inherent magnetic frustration. Here, we present a detailed investigation of the ferromagnetic (FM) kagome magnet ScMn6(Sn0.78Ga0.22)6 using…
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The intricate interplay between flat bands, Dirac cones, and magnetism in kagome materials has recently attracted significant attention from materials scientists, particularly in compounds belonging to the RMn6Sn6 family (R = Sc, Y, rare earths), due to their inherent magnetic frustration. Here, we present a detailed investigation of the ferromagnetic (FM) kagome magnet ScMn6(Sn0.78Ga0.22)6 using angle-resolved photoemission spectroscopy (ARPES), magnetotransport measurements, and density functional theory (DFT) calculations. Our findings reveal a paramagnetic-to-FM transition at 375 K, with the in-plane direction serving as the easy magnetization axis. Notably, ARPES measurements reveal a Dirac cone near the Fermi energy, while the Hall resistivity exhibits a substantial contribution from the anomalous Hall effect. Additionally, we observe a flat band spanning a substantial portion of the Brillouin zone, arising from the destructive interference of wave functions in the Mn kagome lattice. Theoretical calculations reveal that the gap in the Dirac cone can be modulated by altering the orientation of the magnetic moment. An out-of-plane orientation produces a gap of approximately 15 meV, while an in-plane alignment leads to a gapless state, as corroborated by ARPES measurements. This comprehensive analysis provides valuable insights into the electronic structure of magnetic kagome materials and paves the way for exploring novel topological phases in this material class.
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Submitted 14 May, 2025;
originally announced May 2025.
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Electronic structure of a layered altermagnetic compound CoNb4Se8
Authors:
Anup Pradhan Sakhya,
Mazharul Islam Mondal,
Milo Sprague,
Resham Babu Regmi,
Arun K Kumay,
Himanshu Sheokand,
Igor. I. Mazin,
Nirmal J. Ghimire,
Madhab Neupane
Abstract:
Recently, there has been a growing interest in altermagnetism, a novel form of magnetism, characterized by unique spin-splitting even in the absence of both net magnetic moments and spin-orbit coupling. Despite numerous theoretical predictions, experimental evidence of such spin-splitting in real materials remains limited. In this study, we use angle-resolved photoemission spectroscopy (ARPES) com…
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Recently, there has been a growing interest in altermagnetism, a novel form of magnetism, characterized by unique spin-splitting even in the absence of both net magnetic moments and spin-orbit coupling. Despite numerous theoretical predictions, experimental evidence of such spin-splitting in real materials remains limited. In this study, we use angle-resolved photoemission spectroscopy (ARPES) combined with density functional theory (DFT) calculations to investigate the electronic band structure of the altermagnet candidate CoNb4Se8. This material features an ordered sublattice of intercalated Co atoms within NbSe2 layers. Magnetization and electrical resistivity measurements reveal the onset of antiferromagnetism below 168 K. Temperature dependent ARPES data, supported by DFT calculations, uncover spin split bands along the MGM high-symmetry direction. The observation of spin splitting in this high temperature altermagnet opens new avenues for exploring its electronic properties and potential applications in spintronic technologies.
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Submitted 20 March, 2025;
originally announced March 2025.
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Diverse electronic topography in a distorted kagome metal LaTi3Bi4
Authors:
Anup Pradhan Sakhya,
Brenden R. Ortiz,
Barun Ghosh,
Milo Sprague,
Mazharul Islam Mondal,
Matthew Matzelle,
Nabil Atlam,
Arun K Kumay,
David G. Mandrus,
Jonathan D. Denlinger,
Arun Bansil,
Madhab Neupane
Abstract:
Recent reports on a family of kagome metals of the form LnTi3Bi4 (Ln = Lanthanide) has stoked interest due to the combination of highly anisotropic magnetism and a rich electronic structure. The electronic structure near the Fermi level is proposed to exhibit Dirac points and van Hove singularities. In this manuscript, we use angle resolved photoemission spectroscopy measurements in combination wi…
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Recent reports on a family of kagome metals of the form LnTi3Bi4 (Ln = Lanthanide) has stoked interest due to the combination of highly anisotropic magnetism and a rich electronic structure. The electronic structure near the Fermi level is proposed to exhibit Dirac points and van Hove singularities. In this manuscript, we use angle resolved photoemission spectroscopy measurements in combination with density functional theory calculations to investigate the electronic structure of a newly discovered kagome metal LaTi3Bi4. Our results reveal multiple van Hove singularities (VHSs) with one VHS located in the vicinity of the Fermi level. We clearly observe two flat bands, which originate from the destructive interference of wave functions within the Ti kagome motif. These flat bands and VHSs originate from Ti d orbitals and are very responsive to the polarization of the incident beam. We notice a significant anisotropy in the electronic structure, resulting from the breaking of six fold rotational symmetry in this material. Our findings demonstrate this new family of Ti based kagome material as a promising platform to explore novel emerging phenomena in the wider LnTi3Bi4 (Ln= lanthanide) family of materials.
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Submitted 19 March, 2025;
originally announced March 2025.
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Electronic structure of a nodal line semimetal candidate TbSbTe
Authors:
Iftakhar Bin Elius,
Jacob F Casey,
Sabin Regmi,
Volodymyr Buturlim,
Anup Pradhan Sakhya,
Milo Sprague,
Mazharul Islam Mondal,
Nathan Valadez,
Arun K Kumay,
Justin Scrivens,
Yenugonda Venkateswara,
Shovan Dan,
Tetiana Romanova,
Arjun K Pathak,
Krzysztof Gofryk,
Andrzej Ptok,
Dariusz Kaczorowski,
Madhab Neupane
Abstract:
The LnSbTe (Ln = Lanthanides) family, like isostructural ZrSiS type compounds, has emerged as a fertile playground for exploring the interaction of electronic correlations and magnetic ordering with the nodal line band topology. Here, we report a detailed electronic band structure investigation of TbSbTe, corroborated by electrical transport, thermodynamic, and magnetic studies. Temperature-depend…
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The LnSbTe (Ln = Lanthanides) family, like isostructural ZrSiS type compounds, has emerged as a fertile playground for exploring the interaction of electronic correlations and magnetic ordering with the nodal line band topology. Here, we report a detailed electronic band structure investigation of TbSbTe, corroborated by electrical transport, thermodynamic, and magnetic studies. Temperature-dependent magnetic susceptibility and thermodynamic transport studies indicate the onset of antiferromagnetic ordering below TN = 5.1 K. The electronic band structure study, carried out with high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements aided with density functional theory based first-principles calculations reveals presence of nodal lines in the GammaX high symmetry direction, forming a diamond-shaped nodal plane around Gamma high symmetry point. A strongly photon energy dependent nodal feature located at the X point of the surface Brillouin zone, indicating an extended nodal line along X R direction, is also observed. This study elucidates the intricate interplay among symmetry-protected band characteristics, the influence of spin orbit coupling, magnetism, and topological properties.
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Submitted 13 June, 2024;
originally announced June 2024.
