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Spin dynamics and 1/3 magnetization plateau in a coupled distorted diamond chain compound K2Cu3(MoO4)4
Authors:
G. Senthil Murugan,
J. Khatua,
Suyoung Kim,
Eundeok Mun,
K. Ramesh Babu,
Heung-Sik Kim,
C. -L. Huang,
R. Kalaivanan,
U. Rajesh Kumar,
I. Panneer Muthuselvam,
W. T. Chen,
Sritharan Krishnamoorthi,
K. -Y. Choi,
R. Sankar
Abstract:
We investigate magnetic properties of the $s$ = 1/2 compound K$_{2}$Cu$_{3}$(MoO$_{4}$)$_{4}$ by combining magnetic susceptibility, magnetization, specific heat, and electron spin resonance (ESR) with density functional calculations. Its monoclinic structure features alternating Cu$^{2+}$ ($s$ = 1/2) monomers and edge-shared dimers linked by MoO$_{4}$ units, forming a distorted diamond chain along…
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We investigate magnetic properties of the $s$ = 1/2 compound K$_{2}$Cu$_{3}$(MoO$_{4}$)$_{4}$ by combining magnetic susceptibility, magnetization, specific heat, and electron spin resonance (ESR) with density functional calculations. Its monoclinic structure features alternating Cu$^{2+}$ ($s$ = 1/2) monomers and edge-shared dimers linked by MoO$_{4}$ units, forming a distorted diamond chain along the $a$-axis. Antiferromagnetic order occurs at $T_{\rm N}$ = 2.3 K, as evident from a $λ$-type anomaly in specific heat and magnetic susceptibility derivatives. Inverse magnetic susceptibility reveals coexisting ferro- and antiferromagnetic interactions. Specific heat and ESR data show two characteristic temperatures: one at 20 K, associated with spin-singlet formation in Cu$_{2}$O$_{9}$ dimers, and another at 3.68 K, indicating short-range correlations between dimers and monomers. Magnetization measurements reveal a metamagnetic transition at 2.6 T and a critical magnetic field $μ_{0}H_{c}$ = 3.4 T, where a 1/3 magnetization plateau emerges with saturation near 0.35 $μ_{\rm B}$. Low-temperature specific heat and magnetization data reveal the suppression of long-range order at $μ_{0}H_{c}$, enabling the construction of a temperature-magnetic field phase diagram showing multiple magnetic phases near the $μ_{0}H_{c}$. Density functional theory confirms a distorted diamond chain with $J_{1}$ dimers and competing $J_2$, $J_4$, $J_3$, and $J_5$ interactions with monomer spins as an effective low-temperature spin model.
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Submitted 21 April, 2025;
originally announced April 2025.
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Electron-Electron Interactions in 2D Semiconductor InSe
Authors:
Arvind Shankar Kumar,
Kasun Premasiri,
Min Gao,
U. Rajesh Kumar,
Raman Sankar,
Fang-Cheng Chou,
Xuan P. A. Gao
Abstract:
Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative par…
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Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^σ$ which quantifies the electron spin-exchange interaction strength.
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Submitted 22 April, 2020;
originally announced April 2020.
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Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe
Authors:
Kasun Premasiri,
Santosh Kumar Radha,
Sukrit Sucharitakul,
U. Rajesh Kumar,
Raman Sankar,
Fang-Cheng Chou,
Yit-Tsong Chen,
Xuan P. A. Gao
Abstract:
Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to govern the electron spin. In this work, we report the existence and electrostatic tunability of Rashba SOC in multilayer InSe. We observed a gate-voltage-tuned cro…
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Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to govern the electron spin. In this work, we report the existence and electrostatic tunability of Rashba SOC in multilayer InSe. We observed a gate-voltage-tuned crossover from weak localization (WL) to weak antilocalization (WAL) effect in quantum transport studies of InSe, which suggests an increasing SOC strength. Quantitative analyses of magneto-transport studies and energy band diagram calculations provide strong evidence for the predominance of Rashba SOC in electrostatically gated InSe. Furthermore, we attribute the tendency of the SOC strength to saturate at high gate voltages to the increased electronic density of states-induced saturation of the electric field experienced by the electrons in the InSe layer. This explanation of nonlinear gate voltage control of Rashba SOC can be generalized to other electrostatically gated semiconductor nanomaterials in which a similar tendency of spin-orbit length saturation was observed (e.g. nanowire field effect transistors), and is thus of broad implications in spintronics. Identifying and controlling the Rashba SOC in InSe may serve pivotally in devising III-VI semiconductor-based spintronic devices in the future.
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Submitted 5 July, 2018; v1 submitted 13 April, 2018;
originally announced April 2018.
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Intrinsic electron mobility exceeding 1000 cm$^2$/Vs in multilayer InSe FETs
Authors:
Sukrit Sucharitakul,
Nicholas J. Goble,
U. Rajesh Kumar,
Raman Sankar,
Zachary A. Bogorad,
Fang Cheng Chou,
Yit-Tsong Chen,
Xuan P. A. Gao
Abstract:
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe is not only a promising candidate for optoelectronic devices but also has potential for ultrathin field ef…
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Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe is not only a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multi-layer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the devices' field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 77-300K fall in the range of 0.1-2.0$\times$10$^3$ cm$^2$/Vs, which are comparable or better than the state of the art FETs made of 2D transition metal-dichalcogenides.
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Submitted 28 December, 2015; v1 submitted 5 February, 2015;
originally announced February 2015.
