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High resolution coherent population trapping on a single hole spin in a semiconductor
Authors:
Julien Houel,
Jonathan H. Prechtel,
Daniel Brunner,
Christopher E. Kuklewicz,
Brian D. Gerardot,
Nick G. Stoltz,
Pierre M. Petroff,
Richard J. Warburton
Abstract:
We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physics-like dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify this process as charge noise by, first, demonstrat…
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We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physics-like dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify this process as charge noise by, first, demonstrating that the hole spin g-factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.
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Submitted 8 July, 2013;
originally announced July 2013.
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Exciton fine-structure splitting of telecom wavelength single quantum dots: statistics and external strain tuning
Authors:
Luca Sapienza,
Ralph N. E. Malein,
Christopher E. Kuklewicz,
Peter E. Kremer,
Kartik Srinivasan,
Andrew Griffiths,
Edmund Clarke,
Ming Gong,
Richard J. Warburton,
Brian D. Gerardot
Abstract:
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1μm < λ< 1.3 μm) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 μeV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slope…
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In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1μm < λ< 1.3 μm) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 μeV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.
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Submitted 18 September, 2013; v1 submitted 5 March, 2013;
originally announced March 2013.
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Electro-elastic tuning of single particles in individual self-assembled quantum dots
Authors:
Chris E. Kuklewicz,
Ralph N. E. Malein,
Pierre M. Petroff,
Brian D. Gerardot
Abstract:
We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable tuning of exciton energies (+18 to -0.9 micro-eV/MPa) under tensile stress. Modest tuning of the permanent dipole, Coulomb interaction and fine-structure splitt…
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We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable tuning of exciton energies (+18 to -0.9 micro-eV/MPa) under tensile stress. Modest tuning of the permanent dipole, Coulomb interaction and fine-structure splitting energies is also measured. We exploit the variable exciton response to tune multiple quantum dots on the same chip into resonance.
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Submitted 21 July, 2012; v1 submitted 21 April, 2012;
originally announced April 2012.
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Evidence for a critical velocity in a Bose-Einstein condensed gas
Authors:
C. Raman,
M. Kohl,
R. Onofrio,
D. S. Durfee,
C. E. Kuklewicz,
Z. Hadzibabic,
W. Ketterle
Abstract:
We have studied dissipation in a Bose--Einstein condensed gas by moving a blue detuned laser beam through the condensate at different velocities. Strong heating was observed only above a critical velocity.
We have studied dissipation in a Bose--Einstein condensed gas by moving a blue detuned laser beam through the condensate at different velocities. Strong heating was observed only above a critical velocity.
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Submitted 7 September, 1999;
originally announced September 1999.
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Surface Excitations in a Bose-Einstein Condensate
Authors:
R. Onofrio,
D. S. Durfee,
C. Raman,
M. Kohl,
C. E. Kuklewicz,
W. Ketterle
Abstract:
Surface modes in a Bose-Einstein condensate of sodium atoms have been studied. We observed excitations of standing and rotating quadrupolar and octopolar modes. The modes were excited with high spatial and temporal resolution using the optical dipole force of a rapidly scanning laser beam. This novel technique is very flexible and should be useful for the study of rotating Bose-Einstein condensa…
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Surface modes in a Bose-Einstein condensate of sodium atoms have been studied. We observed excitations of standing and rotating quadrupolar and octopolar modes. The modes were excited with high spatial and temporal resolution using the optical dipole force of a rapidly scanning laser beam. This novel technique is very flexible and should be useful for the study of rotating Bose-Einstein condensates and vortices.
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Submitted 24 August, 1999;
originally announced August 1999.
