Showing 1–2 of 2 results for author: Kuang, Y J
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THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN
Authors:
J. N. Heyman,
E. M. Weiss,
J. R. Rollag,
K. M. Yu,
O. D. Dubon,
Y. J. Kuang,
C. W. Tu,
W. Walukiewicz
Abstract:
THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bim…
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THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2E-8 +/-0.8E-8 cm3/s. We discuss the implications for applications in solar energy.
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Submitted 10 May, 2018;
originally announced May 2018.
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Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor
Authors:
J. N. Heyman,
A. M. Schwartzberg,
K. M. Yu,
A. V. Luce,
O. D. Dubon,
Y. J. Kuang,
C. W. Tu,
W. Walukiewicz
Abstract:
We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponen…
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We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponentially with a time constant 23ps. The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r = 2 10^-8 cm-3/s. In our experiment an optical pump pulse excited electrons from the valance band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption was probed with a delayed white light pulse. We modeled the optical properties of our samples using the band anti-crossing model to extract carrier densities as a function of time. These results indicate that the minority carrier lifetimes are too short for efficient solar power conversion and that improvements in material quality will be required for practical applications of GaPAsN based intermediate band solar cells.
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Submitted 18 August, 2016;
originally announced August 2016.
