THz Generation and Detection on Dirac Fermions in Topological Insulators
Authors:
C. W. Luo,
C. C. Lee,
H. -J. Chen,
C. M. Tu,
S. A. Ku,
W. Y. Tzeng,
T. T. Yeh,
M. C. Chiang,
H. J. Wang,
W. C. Chu,
J. -Y. Lin,
K. H. Wu,
J. Y. Juang,
T. Kobayashi,
C. -M. Cheng,
C. -H. Chen,
K. -D. Tsuei,
H. Berger,
R. Sankar,
F. C. Chou,
H. D. Yang
Abstract:
This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption…
▽ More
This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.
△ Less
Submitted 25 January, 2013;
originally announced February 2013.
