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Quantum Monte Carlo and density functional theory study of strain and magnetism in 2D 1T-VSe$_2$ with charge density wave states
Authors:
Daniel Wines,
Akram Ibrahim,
Nishwanth Gudibandla,
Tehseen Adel,
Frank M. Abel,
Sharadh Jois,
Kayahan Saritas,
Jaron T. Krogel,
Li Yin,
Tom Berlijn,
Aubrey T. Hanbicki,
Gregory M. Stephen,
Adam L. Friedman,
Sergiy Krylyuk,
Albert V. Davydov,
Brian Donovan,
Michelle E. Jamer,
Angela R. Hight Walker,
Kamal Choudhary,
Francesca Tavazza,
Can Ataca
Abstract:
Two-dimensional (2D) 1T-VSe$_2$ has prompted significant interest due to the discrepancies regarding alleged ferromagnetism (FM) at room temperature, charge density wave (CDW) states and the interplay between the two. We employed a combined Diffusion Monte Carlo (DMC) and density functional theory (DFT) approach to accurately investigate the magnetic properties, CDW states, and their response to s…
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Two-dimensional (2D) 1T-VSe$_2$ has prompted significant interest due to the discrepancies regarding alleged ferromagnetism (FM) at room temperature, charge density wave (CDW) states and the interplay between the two. We employed a combined Diffusion Monte Carlo (DMC) and density functional theory (DFT) approach to accurately investigate the magnetic properties, CDW states, and their response to strain in monolayer 1T-VSe$_2$. Our calculations show the delicate competition between various phases, revealing critical insights into the relationship between their energetic and structural properties. We performed classical Monte Carlo simulations informed by our DMC and DFT results, and found the magnetic transition temperature ($T_c$) of the undistorted (non-CDW) FM phase to be 228 K and the distorted (CDW) phase to be 68 K. Additionally, we studied the response of biaxial strain on the energetic stability and magnetic properties of various phases of 2D 1T-VSe$_2$ and found that small amounts of strain can increase the $T_c$, suggesting a promising route for engineering and enhancing magnetic behavior. Finally, we synthesized 1T-VSe$_2$ and performed Raman spectroscopy measurements, which were in close agreement with our calculated results, validating our computational approach. Our work emphasizes the role of highly accurate DMC methods in advancing the understanding of monolayer 1T-VSe$_2$ and provides a robust framework for future studies of 2D magnetic materials.
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Submitted 18 March, 2025; v1 submitted 27 September, 2024;
originally announced September 2024.
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Single-Phase L1$_{0}$-Ordered High Entropy Thin Films with High Magnetic Anisotropy
Authors:
Willie B. Beeson,
Dinesh Bista,
Huairuo Zhang,
Sergiy Krylyuk,
Albert V. Davydov,
Gen Yin,
Kai Liu
Abstract:
The vast high entropy alloy (HEA) composition space is promising for discovery of new material phases with unique properties. We explore the potential to achieve rare-earth-free high magnetic anisotropy materials in single-phase HEA thin films. Thin films of FeCoNiMnCu sputtered on thermally oxidized Si/SiO$_{2}$ substrates at room temperature are magnetically soft, with a coercivity on the order…
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The vast high entropy alloy (HEA) composition space is promising for discovery of new material phases with unique properties. We explore the potential to achieve rare-earth-free high magnetic anisotropy materials in single-phase HEA thin films. Thin films of FeCoNiMnCu sputtered on thermally oxidized Si/SiO$_{2}$ substrates at room temperature are magnetically soft, with a coercivity on the order of 10 Oe. After post-deposition rapid thermal annealing (RTA), the films exhibit a single face-centered-cubic phase, with an almost 40-fold increase in coercivity. Inclusion of 50 at.% Pt in the film leads to ordering of a single L1$_{0}$ high entropy intermetallic phase after RTA, along with high magnetic anisotropy and 3 orders of magnitude coercivity increase. These results demonstrate a promising HEA approach to achieve high magnetic anisotropy materials using RTA.
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Submitted 24 May, 2024; v1 submitted 11 November, 2023;
originally announced November 2023.
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Phonon States in NbTe$_4$ and TaTe$_4$ Quasi-One-Dimensional van der Waals Crystals
Authors:
Zahra Ebrahim Nataj,
Fariborz Kargar,
Sergiy Krylyuk,
Topojit Debnath,
Maedeh Taheri,
Subhajit Ghosh,
Huairuo Zhang,
Albert V. Davydov,
Roger K. Lake,
Alexander A. Balandin
Abstract:
We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity…
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We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity of their Raman spectra. While TaTe4 exhibits well-defined peaks through the examined frequency and temperature ranges, NbTe4 reveals extremely weak Raman signatures. The measured spectral positions of the phonon peaks agree with the phonon band structure calculated using the density-functional theory. We offer possible reasons for the in-tensity differences between the two van der Waals materials. Our results provide insights into the phonon properties of NbTe$_4$ and TaTe$_4$ van der Waals materials and indicate the potential of Raman spectroscopy for studying charge-density-wave quantum condensate phases.
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Submitted 5 November, 2023;
originally announced November 2023.
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Concurrent Ferromagnetism and Superconductivity in Fe(Te,Se) van der Waals Josephson Junctions
Authors:
Gang Qiu,
Hung-Yu Yang,
Lunhui Hu,
Huairuo Zhang,
Chih-Yen Chen,
Yanfeng Lyu,
Christopher Eckberg,
Peng Deng,
Sergiy Krylyuk,
Albert V. Davydov,
Ruixing Zhang,
Kang L. Wang
Abstract:
Ferromagnetism and superconductivity are two key ingredients to create non-Abelian quasiparticle excitations that are expected as building blocks to construct topological quantum computers. Adversely, ferromagnetism and superconductivity are typically also two hostile orderings competing to align spins in different configurations, making the material design and experimental implementation extremel…
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Ferromagnetism and superconductivity are two key ingredients to create non-Abelian quasiparticle excitations that are expected as building blocks to construct topological quantum computers. Adversely, ferromagnetism and superconductivity are typically also two hostile orderings competing to align spins in different configurations, making the material design and experimental implementation extremely challenging. Recently, iron-based superconductor Fe(Te,Se) has emerged as a connate topological superconductor (TSC), which differentiates itself from other hybrid TSCs by self-proximitizing its Dirac surface states with bulk superconductivity. So far, the efforts to search for Majorana states in this material are prevalently focused on spectroscopy techniques. In this paper, we present the global transport signature of interfacial magnetism coexisting with superconductivity. Time-reversal symmetry breaking superconducting states are confirmed through device level transport measurements for the first time in a van der Waals (vdW) Josephson junction structure. Magnetic hysteresis is observed in this device scheme, which only appears below the superconducting critical temperature, leading to potential Fulde-Ferrell (FF) superconducting pairing mechanisms. The 0-π phase mixing in the Fraunhofer patterns pinpoints the ferromagnetic state dwelling on the surface. Furthermore, a stochastic field-free superconducting diode effect also confirms the spontaneous time-reversal symmetry breaking which reflects the behavior of the ferromagnetism. Our work paves a new way to explore topological superconductivity in iron-based superconductors for future high Tc fault-tolerant qubit implementations from a device perspective.
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Submitted 11 October, 2023; v1 submitted 1 March, 2023;
originally announced March 2023.
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Rydberg Excitons and Trions in Monolayer MoTe$_2$
Authors:
Souvik Biswas,
Aurélie Champagne,
Jonah B. Haber,
Supavit Pokawanvit,
Joeson Wong,
Hamidreza Akbari,
Sergiy Krylyuk,
Kenji Watanabe,
Takashi Taniguchi,
Albert V. Davydov,
Zakaria Y. Al Balushi,
Diana Y. Qiu,
Felipe H. da Jornada,
Jeffrey B. Neaton,
Harry A. Atwater
Abstract:
Monolayer transition metal dichalcogenide (TMDC) semiconductors exhibit strong excitonic optical resonances which serve as a microscopic, non-invasive probe into their fundamental properties. Like the hydrogen atom, such excitons can exhibit an entire Rydberg series of resonances. Excitons have been extensively studied in most TMDCs (MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$), but detailed exploration…
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Monolayer transition metal dichalcogenide (TMDC) semiconductors exhibit strong excitonic optical resonances which serve as a microscopic, non-invasive probe into their fundamental properties. Like the hydrogen atom, such excitons can exhibit an entire Rydberg series of resonances. Excitons have been extensively studied in most TMDCs (MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$), but detailed exploration of excitonic phenomena has been lacking in the important TMDC material molybdenum ditelluride (MoTe$_2$). Here, we report an experimental investigation of excitonic luminescence properties of monolayer MoTe$_2$ to understand the excitonic Rydberg series, up to 3s. We report significant modification of emission energies with temperature (4K to 300K), quantifying the exciton-phonon coupling. Furthermore, we observe a strongly gate-tunable exciton-trion interplay for all the Rydberg states governed mainly by free-carrier screening, Pauli blocking, and band-gap renormalization in agreement with the results of first-principles GW plus Bethe-Salpeter equation approach calculations. Our results help bring monolayer MoTe$_2$ closer to its potential applications in near-infrared optoelectronics and photonic devices.
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Submitted 7 February, 2023;
originally announced February 2023.
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Spatially-Resolved Band Gap and Dielectric Function in 2D Materials from Electron Energy Loss Spectroscopy
Authors:
Abel Brokkelkamp,
Jaco ter Hoeve,
Isabel Postmes,
Sabrya E. van Heijst,
Louis Maduro,
Albert V. Davydov,
Sergiy Krylyuk,
Juan Rojo,
Sonia Conesa-Boj
Abstract:
The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D materials achieving a spatial resolution down to a few nanometers. This approach is based on machine learning techniques developed in particle phy…
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The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D materials achieving a spatial resolution down to a few nanometers. This approach is based on machine learning techniques developed in particle physics and makes possible the automated processing and interpretation of spectral images from electron energy-loss spectroscopy (EELS). Individual spectra are classified as a function of the thickness with $K$-means clustering and then used to train a deep-learning model of the zero-loss peak background. As a proof-of-concept we assess the band gap and dielectric function of InSe flakes and polytypic WS$_2$ nanoflowers, and correlate these electrical properties with the local thickness. Our flexible approach is generalizable to other nanostructured materials and to higher-dimensional spectroscopies, and is made available as a new release of the open-source EELSfitter framework.
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Submitted 25 February, 2022;
originally announced February 2022.
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Analysis of Raman and Ellipsometric Responses of Nb$_{x}$W$_{1-x}$Se$_{2}$ alloys
Authors:
Albert F. Rigosi,
Heather M. Hill,
Sergiy Krylyuk,
Nhan V. Nguyen,
Angela R. Hight Walker,
Albert V. Davydov,
David B. Newell
Abstract:
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysi…
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The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysis of those alloys by utilizing Raman spectroscopy and spectroscopic ellipsometry.
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Submitted 24 December, 2021;
originally announced December 2021.
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2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density
Authors:
Jinshui Miao,
Chloe Leblanc,
Xiwen Liu,
Baokun Song,
Huairuo Zhang,
Sergiy Krylyuk,
Albert V. Davydov,
Tyson Back,
Nicholas Glavin,
Deep Jariwala
Abstract:
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-threshold slope (SS) transfer characteristics are an attractive option in this regard. However, current generation of Si and III-V heterojunction base…
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Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-threshold slope (SS) transfer characteristics are an attractive option in this regard. However, current generation of Si and III-V heterojunction based TFETs while suffer from low ON current density and ON/OFF current ratios for < 60 mV/dec operation. Semiconducting two-dimensional (2D) layers have recently renewed enthusiasm in novel device design for TFETs not only because of their atomically-thin bodies that favor superior electrostatic control but the same feature also favors higher ON current density and consequently high ON/OFF ratio. Here, we demonstrate gate-tunable heterojunction diodes (triodes) fabricated from InSe/Si 2D/3D van der Waals heterostructures, with a minimum subthreshold swing (SS) as low as 6.4 mV/dec and an SS average of 30 mV/dec over 4 decades of current. Further, the devices show a large current on/off ratio of approximately 10^6 and on-state current density of 0.3 uA/um at a drain bias of -1V. Our work opens new avenues for 2D semiconductors for 3D hetero-integration with Si to achieve ultra-low power logic devices.
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Submitted 11 November, 2021;
originally announced November 2021.
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Charge Density Wave Activated Excitons in TiSe$_2$-MoSe$_2$ Heterostructures
Authors:
Jaydeep Joshi,
Benedikt Scharf,
Igor Mazin,
Sergiy Krylyuk,
Daniel J. Campbell,
Johnpierre Paglione,
Albert Davydov,
Igor Žutić,
Patrick M. Vora
Abstract:
Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar phenomena can be coupled via proximity effects. In this article we identify an unexpected photoluminescence (PL) peak when MoSe$_2$ interacts with TiSe$_2$. A series of…
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Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar phenomena can be coupled via proximity effects. In this article we identify an unexpected photoluminescence (PL) peak when MoSe$_2$ interacts with TiSe$_2$. A series of temperature-dependent and spatially-resolved PL measurements reveal this peak is unique to the TiSe$_2$-MoSe$_2$ interface, higher in energy compared to the neutral exciton, and exhibits exciton-like characteristics. The feature disappears at the TiSe$_2$ charge density wave transition, suggesting that the density wave plays an important role in the formation of this new exciton. We present several plausible scenarios regarding the origin of this peak that individually capture some aspects of our observations, but cannot fully explain this feature. These results therefore represent a fresh challenge for the theoretical community and provide a fascinating way to engineer excitons through interactions with charge density waves.
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Submitted 29 October, 2021;
originally announced October 2021.
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Localized Excitons in NbSe$_2$-MoSe$_2$ Heterostructures
Authors:
Jaydeep Joshi,
Tong Zhou,
Sergiy Krylyuk,
Albert V. Davydov,
Igor Zutic,
Patrick M. Vora
Abstract:
Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. H…
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Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe$_2$ - MoSe$_2$ vdW heterostructures, which provide an important model system to study metal-semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy we discover a sharp emission feature, L1, that is localized at the NbSe$_2$-capped regions of MoSe$_2$. L1 is observed at energies below the commonly-studied MoSe$_2$ excitons and trions, and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. Remarkably, L1 is very robust not just in different samples, but also under a variety of fabrication processes. Using first-principles calculations we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe$_2$ and NbSe$_2$ - MoSe$_2$ heterostructure. We discuss the implications of our studies for atomically-thin optoelectronics devices with atomically-sharp interfaces and tunable electronic structures.
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Submitted 6 April, 2020;
originally announced April 2020.
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Valley Phenomena in the Candidate Phase Change Material WSe$_{2(1-x)}$Te$_{2x}$
Authors:
Sean M. Oliver,
Joshua Young,
Sergiy Krylyuk,
Thomas L. Reinecke,
Albert V. Davydov,
Patrick M. Vora
Abstract:
Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe$_{2(1-x)}$Te$_{2x}$. Low temperature Raman measurements track the alloy-ind…
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Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe$_{2(1-x)}$Te$_{2x}$. Low temperature Raman measurements track the alloy-induced transition from the semiconducting 1H phase of WSe$_2$ to the semimetallic 1T$_d$ phase of WTe$_2$. We correlate these observations with density functional theory calculations and identify new Raman modes from W-Te vibrations in the 1H alloy phase. Photoluminescence measurements show ultra-low energy emission features that highlight alloy disorder arising from the large W-Te bond lengths. Interestingly, valley polarization and coherence in alloys survive at high Te compositions and are more robust against temperature than in WSe$_2$. These findings illustrate the persistence of valley properties in alloys with highly dissimilar parent compounds and suggest band engineering can be utilized for valleytronic devices.
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Submitted 22 November, 2019; v1 submitted 1 August, 2019;
originally announced August 2019.
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Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices
Authors:
Feng Zhang,
Sergiy Krylyuk,
Huairuo Zhang,
Cory A. Milligan,
Dmitry Y. Zemlyanov,
Leonid A. Bendersky,
Albert V. Davydov,
Joerg Appenzeller
Abstract:
Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in 'engineering' crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible engineered…
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Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in 'engineering' crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible engineered phase transition in vertical 2H-MoTe2 devices, a crucial experimental finding that enables electrical phase switching for these ultra-thin layered materials. Scanning tunneling microscopy (STM) was utilized to analyze the TMD crystalline structure after applying an electric field, and scanning tunneling spectroscopy (STS) was employed to map a semiconductor-to-metal phase transition on the nanoscale. In addition, direct confirmation of a phase transition from 2H semiconductor to a distorted 2H' metallic phase was obtained by scanning transmission electron microscopy (STEM). MoTe2 and Mo1-xWxTe2 alloy based vertical resistive random access memory (RRAM) cells were fabricated to demonstrate clear reproducible and controlled switching with programming voltages that are tunable by the layer thickness and that show a distinctly different trend for the binary compound if compared to the ternary materials.
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Submitted 12 September, 2017;
originally announced September 2017.
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Evolution of Raman spectra in Mo$_{1-x}$W$_x$Te$_2$ alloys
Authors:
Sean M. Oliver,
Ryan Beams,
Sergiy Krylyuk,
Irina Kalish,
Arunima K. Singh,
Alina Bruma,
Francesca Tavazza,
Jaydeep Joshi,
Iris R. Stone,
Stephan J. Stranick,
Albert V. Davydov,
Patrick M. Vora
Abstract:
The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^\prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two pha…
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The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^\prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two phases, while also allowing access to the T$_d$ Weyl semimetal phase. The MoWTe$_2$ alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe$_2$-WTe$_2$ system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study MoWTe$_2$ alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T$^\prime$, and T$_d$ structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe$_2$-WTe$_2$ system, including single-phase 2H, 1T$^\prime$, and T$_d$ regions, as well as a two-phase 1T$^\prime$ + T$_d$ region. Disorder arising from compositional fluctuations in MoWTe$_2$ alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T$^\prime$-MoTe$_2$ mode and the enhancement of a double-resonance Raman process in 2H-MoWTe$_2$ alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in MoWTe$_2$ alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.
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Submitted 31 March, 2017;
originally announced March 2017.
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Phonon Anharmonicity in Bulk $T_d$-MoTe$_2$
Authors:
Jaydeep Joshi,
Iris Stone,
Ryan Beams,
Sergiy Krylyuk,
Irina Kalish,
Albert Davydov,
Patrick Vora
Abstract:
We examine anharmonic contributions to the optical phonon modes in bulk $T_d$-MoTe$_2$ through temperature-dependent Raman spectroscopy. At temperatures ranging from 100 K to 200 K, we find that all modes redshift linearly with temperature in agreement with the Grüneisen model. However, below 100 K we observe nonlinear temperature-dependent frequency shifts in some modes. We demonstrate that this…
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We examine anharmonic contributions to the optical phonon modes in bulk $T_d$-MoTe$_2$ through temperature-dependent Raman spectroscopy. At temperatures ranging from 100 K to 200 K, we find that all modes redshift linearly with temperature in agreement with the Grüneisen model. However, below 100 K we observe nonlinear temperature-dependent frequency shifts in some modes. We demonstrate that this anharmonic behavior is consistent with the decay of an optical phonon into multiple acoustic phonons. Furthermore, the highest frequency Raman modes show large changes in intensity and linewidth near $T\approx 250$ K that correlate well with the $T_d \to 1T^\prime$ structural phase transition. These results suggest that phonon-phonon interactions can dominate anharmonic contributions at low temperatures in bulk $T_d$-MoTe$_2$, an experimental regime that is currently receiving attention in efforts to understand Weyl semimetals.
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Submitted 9 June, 2016;
originally announced June 2016.
