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How to reveal metastable skyrmionic spin structures by spin-polarized scanning tunneling microscopy
Authors:
Bertrand Dupé,
Christian N. Kruse,
Tobias Dornheim,
Stefan Heinze
Abstract:
We predict the occurrence of metastable skyrmionic spin structures such as antiskyrmions and higher-order skyrmions in ultra-thin transition-metal films at surfaces using Monte Carlo simulations based on a spin Hamiltonian parametrized from density functional theory calculations. We show that such spin structures will appear with a similar contrast in spin-polarized scanning tunneling microscopy (…
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We predict the occurrence of metastable skyrmionic spin structures such as antiskyrmions and higher-order skyrmions in ultra-thin transition-metal films at surfaces using Monte Carlo simulations based on a spin Hamiltonian parametrized from density functional theory calculations. We show that such spin structures will appear with a similar contrast in spin-polarized scanning tunneling microscopy (SP-STM) images. Both skyrmions and antiskyrmions display a circular shape for out-of-plane magnetized tips and a two-lobe butterfly contrast for in-plane tips. An unambiguous distinction can be achieved by rotating the tip magnetization direction without requiring the information of all components of the magnetization.
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Submitted 18 April, 2016;
originally announced April 2016.
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Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots
Authors:
J. Kobak,
T. Smoleński,
M. Goryca,
J. -G. Rousset,
W. Pacuski,
A. Bogucki,
K. Oreszczuk,
P. Kossacki,
M. Nawrocki,
A. Golnik,
J. Płachta,
P. Wojnar,
C. Kruse,
D. Hommel,
M. Potemski,
T. Kazimierczuk
Abstract:
We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to det…
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We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting $δ_{1}=$0.14 meV ($δ_{1}=$0.47 meV); $g$-factor $g=$2.12 ($g=$1.71); diamagnetic shift $γ=$2.5 $μ$eV$/$T$^{2}$ ($γ=$1.3 $μ$eV$/$T$^{2}$). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.
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Submitted 19 February, 2016;
originally announced February 2016.
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Polariton lasing in high-quality Selenide-based micropillars in the strong coupling regime
Authors:
T. Klein,
S. Klembt,
E. Durupt,
C. Kruse,
D. Hommel,
M. Richard
Abstract:
We have designed and fabricated all-epitaxial ZnSe-based optical micropillars exhibiting the strong coupling regime between the excitonic transition and the confined optical cavity modes. At cryogenic temperatures, under non-resonant pulsed optical excitation, we demonstrate single transverse mode polariton lasing operation in the micropillars. Owing to the high quality factors of these microstruc…
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We have designed and fabricated all-epitaxial ZnSe-based optical micropillars exhibiting the strong coupling regime between the excitonic transition and the confined optical cavity modes. At cryogenic temperatures, under non-resonant pulsed optical excitation, we demonstrate single transverse mode polariton lasing operation in the micropillars. Owing to the high quality factors of these microstructures, the lasing threshold remains low even in micropillars of the smallest diameter. We show that this feature can be traced back to a sidewall roughness grain size below 3 nm, and to suppressed in-plane polariton escape.
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Submitted 19 June, 2015; v1 submitted 29 April, 2015;
originally announced April 2015.
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Exciton-polaritons gas as a nonequilibrium coolant
Authors:
Sebastian Klembt,
Emilien Durupt,
Sanjoy Datta,
Thorsten Klein,
Augustin Baas,
Yoan Léger,
Carsten Kruse,
Detlef Hommel,
Anna Minguzzi,
Maxime Richard
Abstract:
Using angle-resolved Raman spectroscopy, we show that a resonantly excited ground-state exciton-polariton fluid behaves like a nonequilibrium coolant for its host solid-state semiconductor microcavity. With this optical technique, we obtain a detailed measurement of the thermal fluxes generated by the pumped polaritons. We thus find a maximum cooling power for a cryostat temperature of $50$K and b…
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Using angle-resolved Raman spectroscopy, we show that a resonantly excited ground-state exciton-polariton fluid behaves like a nonequilibrium coolant for its host solid-state semiconductor microcavity. With this optical technique, we obtain a detailed measurement of the thermal fluxes generated by the pumped polaritons. We thus find a maximum cooling power for a cryostat temperature of $50$K and below where optical cooling is usually suppressed, and we identify the participation of an ultrafast cooling mechanism. We also show that the nonequilibrium character of polaritons constitutes an unexpected resource: each scattering event can remove more heat from the solid than would be normally allowed using a thermal fluid with normal internal equilibration.
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Submitted 24 February, 2015; v1 submitted 8 December, 2014;
originally announced December 2014.
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Determination of the Fermi Level Position in Dilute Magnetic Ga$_{1-x}$Mn$_{x}$N Films
Authors:
Stefan Barthel,
Gerd Kunert,
Mariuca Gartner,
Mihai Stoica,
Daniel Mourad,
Carsten Kruse,
Stephan Figge,
Detlef Hommel,
Gerd Czycholl
Abstract:
We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and $x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometric measurements the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in orde…
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We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and $x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometric measurements the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in order to theoretically reproduce the measured transport properties. Predictions for the long-wavelength behaviour as a function of the Fermi level are made. The corresponding density of states obtained in this model is in qualitative agreement with first-principle calculations. The absence of a significant experimental peak in the AC conductivity for small frequencies indicates that the Fermi level lies in a gap between two Mn-related impurity bands in the host band gap.
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Submitted 12 March, 2014; v1 submitted 27 January, 2014;
originally announced January 2014.
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Phase diagram and critical behavior of the random ferromagnet $Ga_{1-x}Mn_xN$
Authors:
S. Stefanowicz,
G. Kunert,
C. Simserides,
J. A. Majewski,
W. Stefanowicz,
C. Kruse,
S. Figge,
Tian Li,
R. Jakiela,
K. N. Trohidou,
A. Bonanni,
D. Hommel,
M. Sawicki,
T. Dietl
Abstract:
Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by a tight binding model of superexchange interactions and Monte Carlo simulations of T_C. The critical behavior of this dilute magnetic insulator shows strong dev…
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Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by a tight binding model of superexchange interactions and Monte Carlo simulations of T_C. The critical behavior of this dilute magnetic insulator shows strong deviations from the magnetically clean case (x = 1), in particular, (i) an apparent breakdown of the Harris criterion; (ii) a non-monotonic crossover in the values of the susceptibility critical exponent gamma_eff between the high temperature and critical regimes, and (iii) a smearing of the critical region, which can be explained either by the Griffiths effects or by macroscopic inhomogeneities in the spin distribution with a variance Delta x = (0.2 +/- 0.1)%.
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Submitted 21 June, 2013;
originally announced June 2013.
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Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities
Authors:
Tomasz Jakubczyk,
Wojciech Pacuski,
Tomasz Smoleński,
Andrzej Golnik,
Matthias Florian,
Frank Jahnke,
Carsten Kruse,
Detlef Hommel,
Piotr Kossacki
Abstract:
The coupling of CdTe/ZnTe quantum dot (QD) emission to micropillar cavity eigenmodes in the weak coupling regime is demonstrated. We analyze photoluminescence spectra of QDs embedded in monolithic micropillar cavities based on Bragg mirrors which contain MgSe/ZnTe/MgTe superlattices as low-index material. The pillar emission shows pronounced cavity eigenmodes and their spectral shape is in good ag…
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The coupling of CdTe/ZnTe quantum dot (QD) emission to micropillar cavity eigenmodes in the weak coupling regime is demonstrated. We analyze photoluminescence spectra of QDs embedded in monolithic micropillar cavities based on Bragg mirrors which contain MgSe/ZnTe/MgTe superlattices as low-index material. The pillar emission shows pronounced cavity eigenmodes and their spectral shape is in good agreement with simulations. QD emission in resonance with the cavity mode is shown to be efficiently guided toward the detector and an experimental Purcell enhancement by a factor of 5.7 is determined, confirming theoretical expectations.
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Submitted 29 July, 2012;
originally announced July 2012.
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GaMnN epitaxial films with high magnetization
Authors:
Gerd Kunert,
Sylwia Dobkowska,
Tian Li,
Helfried Reuther,
Carsten Kruse,
Stephan Figge,
Rafal Jakiela,
Alberta Bonanni,
Jörg Grenzer,
Wiktor Stefanowicz,
Maciej Sawicki,
Tomasz Dietl,
Detlef Hommel
Abstract:
We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribu…
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We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm^3.
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Submitted 17 May, 2012; v1 submitted 15 May, 2012;
originally announced May 2012.
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Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdZnSe
Authors:
Daniel Mourad,
Carsten Kruse,
Sebastian Klembt,
Reiner Retzlaff,
Mariuca Gartner,
Mihai Anastasescu,
Detlef Hommel,
Gerd Czycholl
Abstract:
Compound semiconductor alloys of the type ABC find widespread applications as their electronic bulk band gap varies continuously with x, and therefore a tayloring of the energy gap is possible by variation of the concentration. We model the electronic properties of such semiconductor alloys by a multiband tight-binding model on a finite ensemble of supercells and determine the band gap of the allo…
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Compound semiconductor alloys of the type ABC find widespread applications as their electronic bulk band gap varies continuously with x, and therefore a tayloring of the energy gap is possible by variation of the concentration. We model the electronic properties of such semiconductor alloys by a multiband tight-binding model on a finite ensemble of supercells and determine the band gap of the alloy. This treatment allows for an intrinsic reproduction of band bowing effects as a function of the concentration x and is exact in the alloy-induced disorder. In the present paper, we concentrate on bulk CdZnSe as a well-defined model system and give a careful analysis on the proper choice of the basis set and supercell size, as well as on the necessary number of realizations. The results are compared to experimental results obtained from ellipsometric measurements of CdZnSe layers prepared by molecular beam epitaxy (MBE) and photoluminescence (PL) measurements on catalytically grown CdZnSe nanowires reported in the literature.
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Submitted 18 August, 2010; v1 submitted 14 July, 2010;
originally announced July 2010.
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High-reflectivity broadband distributed Bragg reflector lattice matched to ZnTe
Authors:
W. Pacuski,
C. Kruse,
S. Figge,
D. Hommel
Abstract:
We report on the realization of a high quality distributed Bragg reflector with both high and low refractive index layers lattice matched to ZnTe. Our structure is grown by molecular beam epitaxy and is based on binary compounds only. The high refractive index layer is made of ZnTe, while the low index material is made of a short period triple superlattice containing MgSe, MgTe, and ZnTe. The hi…
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We report on the realization of a high quality distributed Bragg reflector with both high and low refractive index layers lattice matched to ZnTe. Our structure is grown by molecular beam epitaxy and is based on binary compounds only. The high refractive index layer is made of ZnTe, while the low index material is made of a short period triple superlattice containing MgSe, MgTe, and ZnTe. The high refractive index step of Delta_n=0.5 in the structure results in a broad stopband and the reflectivity coefficient exceeding 99% for only 15 Bragg pairs.
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Submitted 31 March, 2009;
originally announced March 2009.
