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Spin-split superconductivity in spin-orbit coupled hybrid nanowires with ferromagnetic barriers
Authors:
J. Zhao,
A. Mazanik,
D. Razmadze,
Y. Liu,
P. Krogstrup,
F. S. Bergeret,
S. Vaitiekėnas
Abstract:
We report transport studies of hybrid Josephson junctions based on semiconducting InAs nanowires with fully overlapping epitaxial ferromagnetic insulator EuS and superconducting Al partial shells. Current-biased measurements reveal a hysteretic superconducting window with a sizable supercurrent near the coercive field of the ferromagnetic insulator, accompanied by multiple Andreev reflections. Tun…
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We report transport studies of hybrid Josephson junctions based on semiconducting InAs nanowires with fully overlapping epitaxial ferromagnetic insulator EuS and superconducting Al partial shells. Current-biased measurements reveal a hysteretic superconducting window with a sizable supercurrent near the coercive field of the ferromagnetic insulator, accompanied by multiple Andreev reflections. Tunneling spectroscopy shows a superconducting gap characterized by three peaks, which we attribute to tunneling between exchange-split superconductors. A theoretical model reproduces the observed features and indicates that spin mixing, driven by sizable spin-orbit coupling, is essential to their formation. Our results demonstrate proximity-induced superconductivity through a ferromagnetic insulator and establish a new platform for exploring spin-triplet pairing.
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Submitted 11 June, 2025; v1 submitted 9 June, 2025;
originally announced June 2025.
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Many-body effects of two-level systems in superconducting qubits
Authors:
Joshuah T. Heath,
Alexander C. Tyner,
Thue Christian Thann,
Vincent P. Michal,
Peter Krogstrup,
Mark Kamper Svendsen,
Alexander V. Balatsky
Abstract:
Superconducting qubits are often adversely affected by two-level systems (TLSs) within the Josephson junction, which contribute to decoherence and subsequently limit the performance of the qubit. By treating the TLS as a soft (i.e., low-frequency) bosonic mode localized in real space, we find that a single TLS in either the amorphous oxide surface or the superconducting bulk may result in a locali…
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Superconducting qubits are often adversely affected by two-level systems (TLSs) within the Josephson junction, which contribute to decoherence and subsequently limit the performance of the qubit. By treating the TLS as a soft (i.e., low-frequency) bosonic mode localized in real space, we find that a single TLS in either the amorphous oxide surface or the superconducting bulk may result in a localized "hot spot" of amplified Josephson energy. Such amplification is shown to have a non-negligible effect on the $T_1$ time of certain superconducting qubits, regardless of whether or not the TLS is on resonance with the qubit frequency. With this study, we identify sources of decoherence unique to the superconducting element of superconducting quantum devices.
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Submitted 11 March, 2025;
originally announced March 2025.
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Identification of soft modes in amorphous Al$_{2}$O$_{3}$ via first-principles
Authors:
Alexander C. Tyner,
Joshuah T. Heath,
Thue Christian Thann,
Vincent P. Michal,
Peter Krogstrup,
Mark Kamper Svendsen,
Alexander V. Balatsky
Abstract:
Amorphous Al$_{2}$O$_{3}$ is a fundamental component of modern superconducting qubits. While amphorphous oxides offer distinct advantages, such as directional isotropy and a consistent bulk electronic gap, in realistic systems these compounds support two-level systems (TLSs) which couple to the qubit, expediting decoherence. In this work, we perform a first-principles study of amorphous Al$_{2}$O…
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Amorphous Al$_{2}$O$_{3}$ is a fundamental component of modern superconducting qubits. While amphorphous oxides offer distinct advantages, such as directional isotropy and a consistent bulk electronic gap, in realistic systems these compounds support two-level systems (TLSs) which couple to the qubit, expediting decoherence. In this work, we perform a first-principles study of amorphous Al$_{2}$O$_{3}$ and identify low-energy modes in the electronic and phonon spectra as a possible origin for TLSs.
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Submitted 11 September, 2025; v1 submitted 20 February, 2025;
originally announced February 2025.
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Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling
Authors:
Marc Botifoll,
Ivan Pinto-Huguet,
Enzo Rotunno,
Thomas Galvani,
Catalina Coll,
Payam Habibzadeh Kavkani,
Maria Chiara Spadaro,
Yann-Michel Niquet,
Martin Borstad Eriksen,
Sara Marti-Sanchez,
Georgios Katsaros,
Giordano Scappucci,
Peter Krogstrup,
Giovanni Isella,
Andreu Cabot,
Gonzalo Merino,
Pablo Ordejon,
Stephan Roche,
Vincenzo Grillo,
Jordi Arbiol
Abstract:
(Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of devices due to its time-intensive nature. To address this, we introduce an analytical workflow for the holistic characterization, modelling, and simulation of device heterostructures. This workfl…
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(Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of devices due to its time-intensive nature. To address this, we introduce an analytical workflow for the holistic characterization, modelling, and simulation of device heterostructures. This workflow automates the experimental (S)TEM data analysis, providing an in-depth characterization of crystallographic information, 3D orientation, elemental composition, and strain distribution. It reduces a process that typically takes days for a trained human into an automatic routine solved in minutes. Utilizing a physics-guided artificial intelligence model, it generates representative descriptions of materials and samples. The workflow culminates in creating digital twins, 3D finite element and atomic models of millions of atoms, enabling simulations that provide crucial insights into device behaviour in practical applications. Demonstrated with SiGe planar heterostructures for scalable spin qubits, the workflow links digital twins to theoretical properties, revealing how atomic structure impacts materials and functional properties such as spatially-resolved phononic or electronic characteristics, or (inverse) spin orbit lengths. The versatility of our workflow is demonstrated through its application to a wide array of materials systems, device configurations, and sample morphologies.
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Submitted 3 May, 2025; v1 submitted 1 November, 2024;
originally announced November 2024.
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Subgap transport in superconductor--semiconductor hybrid islands: Weak and strong coupling regimes
Authors:
Marco Valentini,
Rubén Seoane Souto,
Maksim Borovkov,
Peter Krogstrup,
Yigal Meir,
Martin Leijnse,
Jeroen Danon,
Georgios Katsaros
Abstract:
Superconductor--semiconductor hybrid systems play a crucial role in realizing nanoscale quantum devices, including hybrid qubits, Majorana bound states, and Kitaev chains. For such hybrid devices, subgap states play a prominent role in their operation. In this work, we study such subgap states via Coulomb and tunneling spectroscopy through a superconducting island defined in a semiconductor nanowi…
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Superconductor--semiconductor hybrid systems play a crucial role in realizing nanoscale quantum devices, including hybrid qubits, Majorana bound states, and Kitaev chains. For such hybrid devices, subgap states play a prominent role in their operation. In this work, we study such subgap states via Coulomb and tunneling spectroscopy through a superconducting island defined in a semiconductor nanowire fully coated by a superconductor. We systematically explore regimes ranging from an almost decoupled island to the open configuration. In the weak coupling regime, the experimental observations are very similar in the absence of a magnetic field and when one flux quantum is piercing the superconducting shell. Conversely, in the strong coupling regime, significant distinctions emerge between the two cases. We ascribe this different behavior to the existence of subgap states at one flux quantum, which become observable only for sufficiently strong coupling to the leads. We support our interpretation using a simple model to describe transport through the island. Our study highlights the importance of studying a broad range of tunnel couplings for understanding the rich physics of hybrid devices.
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Submitted 15 April, 2025; v1 submitted 6 July, 2024;
originally announced July 2024.
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Ground state phase diagram and "parity flipping'' microwave transitions in a gate-tunable Josephson Junction
Authors:
M. R. Sahu,
F. J. Matute-Cañadas,
M. Benito,
P. Krogstrup,
J. Nygård,
M. F. Goffman,
C. Urbina,
A. Levy Yeyati,
H. Pothier
Abstract:
We probed a gate-tunable InAs nanowire Josephson weak link by coupling it to a microwave resonator. Tracking the resonator frequency shift when the weak link is close to pinch-off, we observe that the ground state of the latter alternates between a singlet and a doublet when varying either the gate voltage or the superconducting phase difference across it. The corresponding microwave absorption sp…
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We probed a gate-tunable InAs nanowire Josephson weak link by coupling it to a microwave resonator. Tracking the resonator frequency shift when the weak link is close to pinch-off, we observe that the ground state of the latter alternates between a singlet and a doublet when varying either the gate voltage or the superconducting phase difference across it. The corresponding microwave absorption spectra display lines that approach zero energy close to the singlet-doublet boundaries, suggesting parity flipping transitions, which are in principle forbidden in microwave spectroscopy and expected to arise only in tunnel spectroscopy. We tentatively interpret them by means of an ancillary state isolated in the junction acting as a reservoir for individual electrons.
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Submitted 20 December, 2023;
originally announced December 2023.
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Gate-tunable Superconductivity in Hybrid InSb-Pb Nanowires
Authors:
Yan Chen,
David van Driel,
Charalampos Lampadaris,
Sabbir A Khan,
Khalifah Alattallah,
Lunjie Zeng,
Eva Olsson,
Tom Dvir,
Peter Krogstrup,
Yu Liu
Abstract:
We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side facets. Hard induced superconducting gaps and gate-tunable supercurrent are observed in the hybrid nanowires. These results showcase the promising potential of…
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We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side facets. Hard induced superconducting gaps and gate-tunable supercurrent are observed in the hybrid nanowires. These results showcase the promising potential of this material combination for a diverse range of applications in hybrid quantum transport devices.
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Submitted 26 September, 2023; v1 submitted 15 September, 2023;
originally announced September 2023.
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Supercurrent transport through 1$e$-periodic full-shell Coulomb islands
Authors:
D. Razmadze,
R. Seoane Souto,
E. C. T. O'Farrell,
P. Krogstrup,
M. Leijnse,
C. M. Marcus,
S. Vaitiekėnas
Abstract:
We experimentally investigate supercurrent through Coulomb islands, where island and leads are fabricated from semiconducting nanowires with fully surrounding superconducting shells. Applying flux along the wire yields a series of destructive Little-Parks lobes with reentrant supercurrent. We find Coulomb blockade with 2$e$ peak spacing in the zeroth lobe and 1$e$ average spacing, with regions of…
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We experimentally investigate supercurrent through Coulomb islands, where island and leads are fabricated from semiconducting nanowires with fully surrounding superconducting shells. Applying flux along the wire yields a series of destructive Little-Parks lobes with reentrant supercurrent. We find Coulomb blockade with 2$e$ peak spacing in the zeroth lobe and 1$e$ average spacing, with regions of significant even-odd modulation, in the first lobe. Evolution of Coulomb-peak amplitude through the first lobe is consistent with a theoretical model of supercurrent carried predominantly by zero-energy states in the leads and the island.
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Submitted 30 January, 2024; v1 submitted 19 August, 2023;
originally announced August 2023.
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Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
Authors:
J. G. Gluschke,
J. Seidl,
R. W. Lyttleton,
K. Nguyen,
M. Lagier,
F. Meyer,
P. Krogstrup,
J. Nygard,
S. Lehmann,
A. B. Mostert,
P. Meredith,
A. P. Micolich
Abstract:
A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron tran…
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A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron transduction performance giving DC gain exceeding 5 and frequency response up to 2 kHz. A key innovation facilitating the logic integration is a new electron-beam process for patterning Nafion with linewidths down to 125 nm. This process delivers feature sizes compatible with low voltage, fast switching elements. This expands the scope for Nafion as a versatile patternable high-proton-conductivity element for bioelectronics and other applications requiring nanoengineered protonic membranes and electrodes.
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Submitted 14 May, 2023;
originally announced May 2023.
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Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires
Authors:
Sabbir A. Khan,
Sara Martí-Sánchez,
Dags Olsteins,
Charalampos Lampadaris,
Damon James Carrad,
Yu Liu,
Judith Quiñones,
Maria Chiara Spadaro,
Thomas S. Jespersen,
Peter Krogstrup,
Jordi Arbiol
Abstract:
Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here,…
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Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here, we present an extensive optimization of Sn growth on InSb, InAsSb and InAs nanowires. We demonstrate how the growth conditions and the crystal structure/symmetry of the semiconductor drive the formation of either semi-metallic $\mathrm{α-Sn}$ or superconducting $\mathrm{β-Sn}$. For InAs nanowires, we obtain phase-pure, superconducting $\mathrm{β-Sn}$ shells. However, for InSb and InAsSb nanowires, an initial epitaxial $\mathrm{α-Sn}$ phase evolves into a polycrystalline shell of coexisting $\mathrmα$ and $\mathrmβ$ phases, where the $β/α$ volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the $\mathrm{β-Sn}$ content. Therefore, this work provides key insights into Sn phase control on a variety of semiconductors, with consequences for the yield of superconducting hybrids suitable for generating topological systems.
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Submitted 2 January, 2023; v1 submitted 26 December, 2022;
originally announced December 2022.
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InAs/MoRe hybrid semiconductor/superconductor nanowire devices
Authors:
Bilal Kousar,
Damon J. Carrad,
Lukas Stampfer,
Peter Krogstrup,
Jesper Nygård,
Thomas S. Jespersen
Abstract:
Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact to molybdenum-rhenium (MoRe) supercondu…
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Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact to molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures ~10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ~10 K, and MoRe based Josephson devices exhibit supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature, and observe gap softening at finite magnetic field. These may be common features for hybrids based on large gap, type-II superconductors. The results encourage further development of MoRe-based hybrids.
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Submitted 4 November, 2022;
originally announced November 2022.
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Threefold enhancement of superconductivity and the role of field-induced odd-frequency pairing in epitaxial aluminum films near the 2D limit
Authors:
Werner M. J. van Weerdenburg,
Anand Kamlapure,
Eirik Holm Fyhn,
Xiaochun Huang,
Niels P. E. van Mullekom,
Manuel Steinbrecher,
Peter Krogstrup,
Jacob Linder,
Alexander Ako Khajetoorians
Abstract:
BCS theory has been widely successful at describing elemental bulk superconductors. Yet, as the length scales of such superconductors approach the atomic limit, dimensionality as well as the environment of the superconductor can lead to drastically different and unpredictable superconducting behavior. Here, we report a threefold enhancement of the superconducting critical temperature and gap size…
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BCS theory has been widely successful at describing elemental bulk superconductors. Yet, as the length scales of such superconductors approach the atomic limit, dimensionality as well as the environment of the superconductor can lead to drastically different and unpredictable superconducting behavior. Here, we report a threefold enhancement of the superconducting critical temperature and gap size in ultrathin epitaxial Al films on Si(111), when approaching the 2D limit, based on high-resolution scanning tunneling microscopy/spectroscopy (STM/STS) measurements. In magnetic field, the Al films show type II behavior and the Meservey-Tedrow-Fulde (MTF) effect for in-plane magnetic fields. Using spatially resolved spectroscopy, we characterize the vortex structure in the MTF regime and find strong deviations from the typical Abrikosov vortex. We corroborate these findings with calculations that unveil the role of odd-frequency pairing and a paramagnetic Meissner effect. These results illustrate two striking influences of reduced dimensionality on a BCS superconductor and present a new platform to study BCS superconductivity in large magnetic fields.
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Submitted 19 October, 2022;
originally announced October 2022.
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Quantum capacitance of a superconducting subgap state in an electrostatically floating dot-island
Authors:
Filip K. Malinowski,
R. K. Rupesh,
Luka Pavešić,
Zoltán Guba,
Damaz de Jong,
Lin Han,
Christian G. Prosko,
Michael Chan,
Yu Liu,
Peter Krogstrup,
András Pályi,
Rok Žitko,
Jonne V. Koski
Abstract:
We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing access to states that would otherwise be highly excited and unstable. Radio-frequency reflectometry with lumped-element resonators couples capacitatively to the…
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We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing access to states that would otherwise be highly excited and unstable. Radio-frequency reflectometry with lumped-element resonators couples capacitatively to the quantum dot, and detects the presence of discrete subgap states. We perform a detailed study of the case with no island states, but with quantum-dot-induced subgap states controlled by the tunnel coupling. When the gap to the quasi-continuum of the excited states is small, the capacitance loading the resonator is strongly suppressed by thermal excitations, an effect we dub "thermal screening". The resonance frequency shift and changes in the quality factor at charge transitions can be accounted for using a single-level Anderson impurity model. The established measurement method, as well as the analysis and simulation framework, are applicable to more complex hybrid devices such as Andreev molecules or Kitaev chains.
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Submitted 5 October, 2022; v1 submitted 4 October, 2022;
originally announced October 2022.
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Few-mode to mesoscopic junctions in gatemon qubits
Authors:
Alisa Danilenko,
Deividas Sabonis,
Georg W. Winkler,
Oscar Erlandsson,
Peter Krogstrup,
Charles M. Marcus
Abstract:
We investigate a semiconductor nanowire-based gatemon qubit with epitaxial Al on two facets of the nanowire, allowing gate control of wire density. Two segments have the Al removed, one forming a Josephson junction and the other operating as a transistor, providing in-situ switching between dc transport and qubit operation. Gating the NW changes the bulk wire potential distribution, while gating t…
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We investigate a semiconductor nanowire-based gatemon qubit with epitaxial Al on two facets of the nanowire, allowing gate control of wire density. Two segments have the Al removed, one forming a Josephson junction and the other operating as a transistor, providing in-situ switching between dc transport and qubit operation. Gating the NW changes the bulk wire potential distribution, while gating the Josephson junction changes the number of junction modes. Both effects are revealed by the dependence of qubit frequency on parallel magnetic field. A detailed model of the wire and junction yields behavior consistent with experiment. In the multi-mode regime, fluctuations in qubit frequency are considerably smaller than the theoretical "universal" value, also smaller than numerics, and consistent with previous measurements of fluctuating critical current.
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Submitted 8 September, 2022;
originally announced September 2022.
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Microwave spectroscopy of interacting Andreev spins
Authors:
J. J. Wesdorp,
F. J. Matute-Caňadas,
A. Vaartjes,
L. Grünhaupt,
T. Laeven,
S. Roelofs,
L. J. Splitthoff,
M. Pita-Vidal,
A. Bargerbos,
D. J. van Woerkom,
P. Krogstrup,
L. P. Kouwenhoven,
C. K. Andersen,
A. Levy Yeyati,
B. van Heck,
G. de Lange
Abstract:
Andreev bound states are fermionic states localized in weak links between superconductors which can be occupied with spinful quasiparticles. Microwave experiments using superconducting circuits with InAs/Al nanowire Josephson junctions have recently enabled probing and coherent manipulation of Andreev states but have remained limited to zero or small fields. Here we use a flux-tunable superconduct…
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Andreev bound states are fermionic states localized in weak links between superconductors which can be occupied with spinful quasiparticles. Microwave experiments using superconducting circuits with InAs/Al nanowire Josephson junctions have recently enabled probing and coherent manipulation of Andreev states but have remained limited to zero or small fields. Here we use a flux-tunable superconducting circuit in external magnetic fields up to 1T to perform spectroscopy of spin-polarized Andreev states up to ~250 mT, beyond which the spectrum becomes gapless. We identify singlet and triplet states of two quasiparticles occupying different Andreev states through their dispersion in magnetic field. These states are split by exchange interaction and couple via spin-orbit coupling, analogously to two-electron states in quantum dots. We also show that the magnetic field allows to drive a direct spin-flip transition of a single quasiparticle trapped in the junction. Finally, we measure a gate- and field-dependent anomalous phase shift of the Andreev spectrum, of magnitude up to approximately $0.7π$. Our observations demonstrate new ways to manipulate Andreev states in a magnetic field and reveal spin-polarized triplet states that carry supercurrent.
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Submitted 23 August, 2022;
originally announced August 2022.
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Mitigation of quasiparticle loss in superconducting qubits by phonon scattering
Authors:
Arno Bargerbos,
Lukas Johannes Splitthoff,
Marta Pita-Vidal,
Jaap J. Wesdorp,
Yu Liu,
Peter Krogstrup,
Leo P. Kouwenhoven,
Christian Kraglund Andersen,
Lukas Grünhaupt
Abstract:
Quantum error correction will be an essential ingredient in realizing fault-tolerant quantum computing. However, most correction schemes rely on the assumption that errors are sufficiently uncorrelated in space and time. In superconducting qubits this assumption is drastically violated in the presence of ionizing radiation, which creates bursts of high energy phonons in the substrate. These phonon…
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Quantum error correction will be an essential ingredient in realizing fault-tolerant quantum computing. However, most correction schemes rely on the assumption that errors are sufficiently uncorrelated in space and time. In superconducting qubits this assumption is drastically violated in the presence of ionizing radiation, which creates bursts of high energy phonons in the substrate. These phonons can break Cooper-pairs in the superconductor and, thus, create quasiparticles over large areas, consequently reducing qubit coherence across the quantum device in a correlated fashion. A potential mitigation technique is to place large volumes of normal or superconducting metal on the device, capable of reducing the phonon energy to below the superconducting gap of the qubits. To investigate the effectiveness of this method we fabricate a quantum device with four nominally identical nanowire-based transmon qubits. On the device, half of the niobium-titanium-nitride ground plane is replaced with aluminum (Al), which has a significantly lower superconducting gap. We deterministically inject high energy phonons into the substrate by voltage biasing a galvanically isolated Josephson junction. In the presence of the low gap material, we find a factor of 2-5 less degradation in the injection-dependent qubit lifetimes, and observe that undesired excited qubit state population is mitigated by a similar factor. We furthermore turn the Al normal with a magnetic field, finding no change in the phonon-protection. This suggests that the efficacy of the protection in our device is not limited by the size of the superconducting gap in the Al ground plane. Our results provide a promising foundation for protecting superconducting qubit processors against correlated errors from ionizing radiation.
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Submitted 26 July, 2022;
originally announced July 2022.
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InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Authors:
Morteza Aghaee,
Arun Akkala,
Zulfi Alam,
Rizwan Ali,
Alejandro Alcaraz Ramirez,
Mariusz Andrzejczuk,
Andrey E Antipov,
Pavel Aseev,
Mikhail Astafev,
Bela Bauer,
Jonathan Becker,
Srini Boddapati,
Frenk Boekhout,
Jouri Bommer,
Esben Bork Hansen,
Tom Bosma,
Leo Bourdet,
Samuel Boutin,
Philippe Caroff,
Lucas Casparis,
Maja Cassidy,
Anna Wulf Christensen,
Noah Clay,
William S Cole,
Fabiano Corsetti
, et al. (102 additional authors not shown)
Abstract:
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca…
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We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
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Submitted 8 March, 2024; v1 submitted 6 July, 2022;
originally announced July 2022.
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Scale-dependent optimized homoepitaxy of InAs(111)A
Authors:
Steffen Zelzer,
Rajib Batabyal,
Derek Dardzinski,
Noa Marom,
Kasper Grove-Rasmussen,
Peter Krogstrup
Abstract:
We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale impurities and the larger-scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and…
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We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale impurities and the larger-scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As$_2$ flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macro and atomic scale. In particular, we show that a pure step-flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium adatom deficient, low atomic defect surface can be observed for a high hillock density. We identify the main remaining point defect on the latter surface by comparison to STM simulations. Furthermore, we provide a method for extracting root-mean-square surface roughness values and discuss their use for surface quality optimization by comparison to scale-dependent, technologically relevant surface metrics. Finally, mapping the separately optimized regions of the growth parameter space should provide a guide for future device engineering involving epitaxial InAs(111)A growth.
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Submitted 23 May, 2022;
originally announced May 2022.
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Photon assisted tunneling of high order multiple Andreev reflections in epitaxial nanowire Josephson junctions
Authors:
Damon J. Carrad,
Lukas Stampfer,
Dags Olsteins,
Christian E. N. Petersen,
Sabbir A. Khan,
Peter Krogstrup,
Thomas Sand Jespersen
Abstract:
Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperature…
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Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, $n$, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge $ne$ transferred by the $n^\mathrm{th}$ order tunnel process. The measurements suggest PAT as a powerful method for assigning the origin of low energy spectral features in hybrid Josephson devices.
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Submitted 26 July, 2022; v1 submitted 6 May, 2022;
originally announced May 2022.
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Supercurrent reversal in ferromagnetic hybrid nanowire Josephson junctions
Authors:
D. Razmadze,
R. Seoane Souto,
L. Galletti,
A. Maiani,
Y. Liu,
P. Krogstrup,
C. Schrade,
A. Gyenis,
C. M. Marcus,
S. Vaitiekėnas
Abstract:
We report supercurrent transport measurements in hybrid Josephson junctions comprised of semiconducting InAs nanowires with epitaxial ferromagnetic insulator EuS and superconducting Al coatings. The wires display a hysteretic superconducting window close to the coercivity, away from zero external magnetic field. Using a multi-interferometer setup, we measure the current-phase relation of multiple…
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We report supercurrent transport measurements in hybrid Josephson junctions comprised of semiconducting InAs nanowires with epitaxial ferromagnetic insulator EuS and superconducting Al coatings. The wires display a hysteretic superconducting window close to the coercivity, away from zero external magnetic field. Using a multi-interferometer setup, we measure the current-phase relation of multiple magnetic junctions and find an abrupt switch between $π$ and 0 phases within the superconducting window. We attribute the 0-$π$ transition to the discrete flipping of the EuS domains and provide a qualitative theory showing that a sizable exchange field can polarize the junction and lead to the supercurrent reversal. Both $0$ and $π$ phases can be realized at zero external field by demagnetizing the wire.
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Submitted 11 March, 2023; v1 submitted 7 April, 2022;
originally announced April 2022.
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Parity switching in a full-shell superconductor-semiconductor nanowire qubit
Authors:
O. Erlandsson,
D. Sabonis,
A. Kringhøj,
T. W. Larsen,
P. Krogstrup,
K. D. Petersson,
C. M. Marcus
Abstract:
The rate of charge-parity switching in a full-shell superconductor-semiconductor nanowire qubit is measured by directly monitoring the dispersive shift of a readout resonator. At zero magnetic field, the measured switching time scale $T_P$ is on the order of 100 ms. Two-tone spectroscopy data post-selected on charge-parity is demonstrated. With increasing temperature or magnetic field, TP is at fi…
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The rate of charge-parity switching in a full-shell superconductor-semiconductor nanowire qubit is measured by directly monitoring the dispersive shift of a readout resonator. At zero magnetic field, the measured switching time scale $T_P$ is on the order of 100 ms. Two-tone spectroscopy data post-selected on charge-parity is demonstrated. With increasing temperature or magnetic field, TP is at first constant, then exponentially suppressed, consistent with a model that includes both non-equilibrium and thermally activated quasiparticles. As TP is suppressed, qubit lifetime T1 also decreases. The long $T_P\sim 0.1$ s at zero field is promising for future development of qubits based on hybrid nanowires.
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Submitted 11 February, 2022;
originally announced February 2022.
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Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island
Authors:
H. Q. Nguyen,
D. Sabonis,
D. Razmadze,
E. T. Mannila,
V. F. Maisi,
D. M. T. van Zanten,
E. C. T. O'Farrell,
P. Krogstrup,
F. Kuemmeth,
J. P. Pekola,
C. M. Marcus
Abstract:
The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor charge occup…
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The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.
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Submitted 11 February, 2022;
originally announced February 2022.
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Signatures of interactions in the Andreev spectrum of nanowire Josephson junctions
Authors:
F. J. Matute-Cañadas,
C. Metzger,
Sunghun Park,
L. Tosi,
P. Krogstrup,
J. Nygård,
M. F. Goffman,
C. Urbina,
H. Pothier,
A. Levy Yeyati
Abstract:
We performed microwave spectroscopy of an InAs nanowire between superconducting contacts implementing a finite-length, multi-channel Josephson weak link. Certain features in the spectra, such as the splitting by spin-orbit interactions of the transition lines among Andreev states, have been already understood in terms of non-interacting models. However, we identify here additional transitions, whi…
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We performed microwave spectroscopy of an InAs nanowire between superconducting contacts implementing a finite-length, multi-channel Josephson weak link. Certain features in the spectra, such as the splitting by spin-orbit interactions of the transition lines among Andreev states, have been already understood in terms of non-interacting models. However, we identify here additional transitions, which evidence the presence of Coulomb interactions. By combining experimental measurements and model calculations, we reach a qualitative understanding of these very rich Andreev spectra.
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Submitted 31 August, 2022; v1 submitted 10 December, 2021;
originally announced December 2021.
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Microwave susceptibility observation of interacting many-body Andreev states
Authors:
V. Fatemi,
P. D. Kurilovich,
M. Hays,
D. Bouman,
T. Connolly,
S. Diamond,
N. E. Frattini,
V. D. Kurilovich,
P. Krogstrup,
J. Nygard,
A. Geresdi,
L. I. Glazman,
M. H. Devoret
Abstract:
Electrostatic charging affects the many-body spectrum of Andreev states, yet its influence on their microwave properties has not been elucidated. We developed a circuit quantum electrodynamics probe that, in addition to transition spectroscopy, measures the microwave susceptibility of different states of a semiconductor nanowire weak link with a single dominant (spin-degenerate) Andreev level. We…
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Electrostatic charging affects the many-body spectrum of Andreev states, yet its influence on their microwave properties has not been elucidated. We developed a circuit quantum electrodynamics probe that, in addition to transition spectroscopy, measures the microwave susceptibility of different states of a semiconductor nanowire weak link with a single dominant (spin-degenerate) Andreev level. We found that the microwave susceptibility does not exhibit a particle-hole symmetry, which we qualitatively explain as an influence of Coulomb interaction. Moreover, our state-selective measurement reveals a large, $π$-phase shifted contribution to the response common to all many-body states which can be interpreted as arising from a phase-dependent continuum in the superconducting density of states.
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Submitted 10 December, 2021;
originally announced December 2021.
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Dynamical polarization of the fermion parity in a nanowire Josephson junction
Authors:
J. J. Wesdorp,
L. Grünhaupt,
A. Vaartjes,
M. Pita-Vidal,
A. Bargerbos,
L. J. Splitthoff,
P. Krogstrup,
B. van Heck,
G. de Lange
Abstract:
Josephson junctions in InAs nanowires proximitized with an Al shell can host gate-tunable Andreev bound states. Depending on the bound state occupation, the fermion parity of the junction can be even or odd. Coherent control of Andreev bound states has recently been achieved within each parity sector, but it is impeded by incoherent parity switches due to excess quasiparticles in the superconducti…
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Josephson junctions in InAs nanowires proximitized with an Al shell can host gate-tunable Andreev bound states. Depending on the bound state occupation, the fermion parity of the junction can be even or odd. Coherent control of Andreev bound states has recently been achieved within each parity sector, but it is impeded by incoherent parity switches due to excess quasiparticles in the superconducting environment. Here, we show that we can polarize the fermion parity dynamically using microwave pulses by embedding the junction in a superconducting LC resonator. We demonstrate polarization up to 94% $\pm$ 1% (89% $\pm$ 1%) for the even (odd) parity as verified by single shot parity-readout. Finally, we apply this scheme to probe the flux-dependent transition spectrum of the even or odd parity sector selectively, without any post-processing or heralding.
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Submitted 3 December, 2021;
originally announced December 2021.
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Radio-frequency C-V measurements with sub-attofarad sensitivity
Authors:
Filip K. Malinowski,
Lin Han,
Damaz de Jong,
Ji-Yin Wang,
Christian G. Prosko,
Ghada Badawy,
Sasa Gazibegovic,
Yu Liu,
Peter Krogstrup,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Jonne V. Koski
Abstract:
We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test th…
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We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test the measurement method on InSb and InAs nanowires at dilution-refrigerator temperatures. The measured capacitances are consistent with those inferred from the periodicity of the Coulomb blockade of quantum dots realized in the same devices. In an implementation of the resonator using an off-chip superconducting spiral inductor we find sensitivity values reaching down to 75~zF/$\sqHz$ at 1~kHz measurement bandwidth, and noise down to 0.45~aF at 1~Hz bandwidth. We estimate the sensitivity of the method for a number of other implementations. In particular we predict typical sensitivity of about 40~zF/$\sqHz$ at room temperature with a resonator comprised of off-the-shelf components. Of several proposed applications, we demonstrate two: the capacitance measurement of several identical 80~nm-wide gates with a single resonator, and the field-effect mobility measurement of an individual nanowire with the gate capacitance measured in-situ.
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Submitted 7 October, 2021;
originally announced October 2021.
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Anisotropic superconductivity induced at a hybrid superconducting-semiconducting interface
Authors:
Anand Kamlapure,
Manuel Simonato,
Emil Sierda,
Manuel Steinbrecher,
Umut Kamber,
Elze J. Knol,
Peter Krogstrup,
Mikhail I. Katsnelson,
Malte Rösner,
Alexander Ako Khajetoorians
Abstract:
Epitaxial semiconductor-superconductor heterostructures are promising as a platform for gate-tunable superconducting electronics. Thus far, the superconducting properties in such hybrid systems have been predicted based on simplified hybridization models which neglect the electronic structure that can arise at the interface. Here, we demonstrate that the hybrid electronic structure derived at the…
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Epitaxial semiconductor-superconductor heterostructures are promising as a platform for gate-tunable superconducting electronics. Thus far, the superconducting properties in such hybrid systems have been predicted based on simplified hybridization models which neglect the electronic structure that can arise at the interface. Here, we demonstrate that the hybrid electronic structure derived at the interface between semiconducting black phosphorus and atomically thin films of lead can drastically modify the superconducting properties of the thin metallic film. Using ultra-low temperature scanning tunneling microscopy and spectroscopy, we ascertain the moiré structure driven by the interface, and observe a strongly anisotropic renormalization of the superconducting gap and vortex structure of the lead film. Based on density functional theory, we attribute the renormalization of the superconductivity to weak hybridization at the interface where the anisotropic characteristics of the semiconductor band structure is imprinted on the Fermi surface of the superconductor. Based on a hybrid two-band model, we link this hybridization-driven renormalization to a weighting of the superconducting order parameter that quantitatively reproduces the measured spectra. These results illustrate the effect of interfacial hybridization at superconductor-semiconductor heterostructures, and pathways for engineering quantum technologies based on gate-tunable superconducting electronics.
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Submitted 17 September, 2021;
originally announced September 2021.
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Selective Area Growth Rates of III-V Nanowires
Authors:
Martin Espiñeira Cachaza,
Anna Wulff Christensen,
Daria Beznasyuk,
Tobias Særkjær,
Morten Hannibal Madsen,
Rawa Tanta,
Gunjan Nagda,
Sergej Schuwalow,
Peter Krogstrup
Abstract:
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design…
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Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs as platform we show how the design parameters such as NW pitch, width, and orientation have an impact on the growth rates. We demonstrate that by varying the control parameters (i.e. substrate temperature and beam fluxes) source, balance, and sink growth modes may exist in the SAG selectivity window. Using this model, we show that inhomogeneous growth rates can be compensated by tuning the design parameters.
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Submitted 1 September, 2021; v1 submitted 18 June, 2021;
originally announced June 2021.
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Quasiparticle trapping by orbital effect in a hybrid superconducting-semiconducting circuit
Authors:
Willemijn Uilhoorn,
James G. Kroll,
Arno Bargerbos,
Syed D. Nabi,
Chung-Kai Yang,
Peter Krogstrup,
Leo P. Kouwenhoven,
Angela Kou,
Gijs de Lange
Abstract:
The tunneling of quasiparticles (QPs) across Josephson junctions (JJs) detrimentally affects the coherence of superconducting and charge-parity qubits, and is shown to occur more frequently in magnetic fields. Here we demonstrate the parity lifetime to survive in excess of 50$\,\mathrmμ$s in magnetic fields up to 1$\,$T, utilising a semiconducting nanowire transmon to detect QP tunneling in real t…
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The tunneling of quasiparticles (QPs) across Josephson junctions (JJs) detrimentally affects the coherence of superconducting and charge-parity qubits, and is shown to occur more frequently in magnetic fields. Here we demonstrate the parity lifetime to survive in excess of 50$\,\mathrmμ$s in magnetic fields up to 1$\,$T, utilising a semiconducting nanowire transmon to detect QP tunneling in real time. We exploit gate-tunable QP filters and find magnetic-field-enhanced parity lifetimes, consistent with increased QP trapping by the ungated nanowire due to orbital effects. Our findings highlight the importance of QP trap engineering for building magnetic-field compatible hybrid superconducting circuits.
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Submitted 23 May, 2021;
originally announced May 2021.
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Comparing tunneling spectroscopy and charge sensing of Andreev bound states in a semiconductor-superconductor hybrid nanowire structure
Authors:
Deividas Sabonis,
David van Zanten,
Judith Suter,
Torsten Karzig,
Dmitry I. Pikulin,
Jukka I. Väyrynen,
Eoin O'Farrell,
Davydas Razmadze,
Peter Krogstrup,
Charles M. Marcus
Abstract:
Transport studies of Andreev bound states (ABSs) are complicated by the interplay of charging effects and superconductivity. Here, we compare transport approaches to ABS spectroscopy in a semiconductor-superconductor island to a charge-sensing approach based on an integrated radio-frequency single-electron transistor. Consistency of the methods demonstrates that fast, non-invasive charge sensing a…
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Transport studies of Andreev bound states (ABSs) are complicated by the interplay of charging effects and superconductivity. Here, we compare transport approaches to ABS spectroscopy in a semiconductor-superconductor island to a charge-sensing approach based on an integrated radio-frequency single-electron transistor. Consistency of the methods demonstrates that fast, non-invasive charge sensing allows accurate quantitative measurement of ABSs while eluding some complexities of transport.
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Submitted 18 May, 2021;
originally announced May 2021.
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Direct Transport between Superconducting Subgap States in a Double Quantum Dot
Authors:
Gorm Ole Steffensen,
Juan Carlos Estrada Saldaña,
Alexandros Vekris,
Peter Krogstrup,
Kasper Grove-Rasmussen,
Jesper Nygård,
Alfredo Levy Yeyati,
Jens Paaske
Abstract:
We demonstrate direct transport between two opposing sets of Yu-Shiba-Rusinov (YSR) subgap states realized in a double quantum dot. This sub-gap transport relies on intrinsic quasiparticle relaxation, but the tunability of the device allows us to explore also an additional relaxation mechanism based on charge transferring Andreev reflections. The transition between these two relaxation regimes is…
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We demonstrate direct transport between two opposing sets of Yu-Shiba-Rusinov (YSR) subgap states realized in a double quantum dot. This sub-gap transport relies on intrinsic quasiparticle relaxation, but the tunability of the device allows us to explore also an additional relaxation mechanism based on charge transferring Andreev reflections. The transition between these two relaxation regimes is identified in the experiment as a marked gate-induced stepwise change in conductance. We present a transport calculation, including YSR bound states and multiple Andreev reflections alongside with quasiparticle relaxation, due to a weak tunnel coupling to a nearby normal metal, and obtain excellent agreement with the data.
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Submitted 14 May, 2021;
originally announced May 2021.
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Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic insulator islands
Authors:
S. Vaitiekėnas,
R. Seoane Souto,
Y. Liu,
P. Krogstrup,
K. Flensberg,
M. Leijnse,
C. M. Marcus
Abstract:
We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconduc…
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We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.
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Submitted 2 February, 2022; v1 submitted 3 April, 2021;
originally announced April 2021.
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Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires
Authors:
Lukas Stampfer,
Damon J. Carrad,
Dags Olsteins,
Christian E. N. Petersen,
Sabbir A. Khan,
Peter Krogstrup,
Thomas S. Jespersen
Abstract:
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires a…
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Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibited periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution was tunable by a gate potential as expected from electrostatic models.
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Submitted 1 April, 2021;
originally announced April 2021.
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Doubling the mobility of InAs/InGaAs selective area grown nanowires
Authors:
Daria V. Beznasyuk,
Sara Martí-Sánchez,
Jung-Hyun Kang,
Rawa Tanta,
Mohana Rajpalke,
Tomaš Stankevič,
Anna Wulff Christensen,
Maria Chiara Spadaro,
Roberto Bergamaschini,
Nikhil N. Maka,
Christian Emanuel N. Petersen,
Damon J. Carrad,
Thomas Sand Jespersen,
Jordi Arbiol,
Peter Krogstrup
Abstract:
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatte…
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Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In$_x$Ga$_{1-x}$As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high quality InAs transport channels with the field-effect electron mobility over~10000~cm$^2$V$^{-1}$s$^{-1}$. This is twice as high as for non-optimized samples and among the highest reported for InAs selective area grown nanostructures.
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Submitted 4 February, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
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Rapid microwave-only characterization and readout of quantum dots using multiplexed gigahertz-frequency resonators
Authors:
Damaz de Jong,
Christian Prosko,
Daan M. A. Waardenburg,
Lin Han,
Filip K. Malinowski,
Peter Krogstrup,
Leo P. Kouwenhoven,
Jonne V. Koski,
Wolfgang Pfaff
Abstract:
Superconducting resonators enable fast characterization and readout of mesoscopic quantum devices. Finding ways to perform measurements of interest on such devices using resonators only is therefore of great practical relevance. We report the experimental investigation of an InAs nanowire multi-quantum dot device by probing GHz resonators connected to the device. First, we demonstrate accurate ext…
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Superconducting resonators enable fast characterization and readout of mesoscopic quantum devices. Finding ways to perform measurements of interest on such devices using resonators only is therefore of great practical relevance. We report the experimental investigation of an InAs nanowire multi-quantum dot device by probing GHz resonators connected to the device. First, we demonstrate accurate extraction of the DC conductance from measurements of the high-frequency admittance. Because our technique does not rely on DC calibration, it could potentially obviate the need for DC measurements in semiconductor qubit devices. Second, we demonstrate multiplexed gate sensing and the detection of charge tunneling on microsecond time scales. The GHz detection of dispersive resonator shifts allows rapid acquisition of charge-stability diagrams, as well as resolving charge tunneling in the device with a signal-to-noise ratio of up to 15 in one microsecond. Our measurements show that GHz-frequency resonators may serve as a universal tool for fast tune-up and high-fidelity readout of semiconductor qubits.
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Submitted 5 March, 2021;
originally announced March 2021.
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Collective formation of misfit dislocations at the critical thickness for equilibrium nanowire heterostructures
Authors:
Thue Christian Thann,
Tobias Særkjær,
Sergej Schuwalow,
Peter Krogstrup
Abstract:
In this work we model the evolution of strain energy during different growth stages of heterostructure nanowires. We find that the minimum energy configuration changes abruptly from fully elastically strained to partially relaxed due to collective formation of a misfit dislocation network. The transition at the critical thickness is associated with a characteristic density of misfits. These insigh…
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In this work we model the evolution of strain energy during different growth stages of heterostructure nanowires. We find that the minimum energy configuration changes abruptly from fully elastically strained to partially relaxed due to collective formation of a misfit dislocation network. The transition at the critical thickness is associated with a characteristic density of misfits. These insights are gained from a technique developed to simulate misfit dislocations in a finite element framework, incorporating both elastic and plastic relaxation in a stationary heterostructure. We argue that these results have general relevance for mismatched heterostructures.
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Submitted 8 August, 2023; v1 submitted 6 February, 2021;
originally announced February 2021.
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Evidence of Andreev blockade in a double quantum dot coupled to a superconductor
Authors:
Po Zhang,
Hao Wu,
Jun Chen,
Sabbir A. Khan,
Peter Krogstrup,
David Pekker,
Sergey M. Frolov
Abstract:
We design and investigate an experimental system capable of entering an electron transport blockade regime in which a spin-triplet localized in the path of current is forbidden from entering a spin-singlet superconductor. To stabilize the triplet a double quantum dot is created electrostatically near a superconducting lead in an InAs nanowire. The dots are filled stochastically with electrons of e…
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We design and investigate an experimental system capable of entering an electron transport blockade regime in which a spin-triplet localized in the path of current is forbidden from entering a spin-singlet superconductor. To stabilize the triplet a double quantum dot is created electrostatically near a superconducting lead in an InAs nanowire. The dots are filled stochastically with electrons of either spin. The superconducting lead is a molecular beam epitaxy grown Al shell. The shell is etched away over a wire segment to make room for the double dot and the normal metal gold lead. The quantum dot closest to the normal lead exhibits Coulomb diamonds, the dot closest to the superconducting lead exhibits Andreev bound states and an induced gap. The experimental observations compare favorably to a theoretical model of Andreev blockade, named so because the triplet double dot configuration suppresses Andreev reflections. Observed leakage currents can be accounted for by finite temperature. We observe the predicted quadruple level degeneracy points of high current and a periodic conductance pattern controlled by the occupation of the normal dot. Even-odd transport asymmetry is lifted with increased temperature and magnetic field. This blockade phenomenon can be used to study spin structure of superconductors. It may also find utility in quantum computing devices that utilize Andreev or Majorana states.
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Submitted 5 February, 2021;
originally announced February 2021.
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Excitations in a superconducting Coulombic energy gap
Authors:
Juan Carlos Estrada Saldaña,
Alexandros Vekris,
Luka Pavešič,
Peter Krogstrup,
Rok Žitko,
Kasper Grove-Rasmussen,
Jesper Nygård
Abstract:
Cooper pairing and Coulomb repulsion are antagonists, producing distinct energy gaps in superconductors and Mott insulators. When a superconductor exchanges unpaired electrons with a quantum dot, its gap is populated by a pair of electron-hole symmetric Yu-Shiba-Rusinov excitations between doublet and singlet many-body states. The fate of these excitations in the presence of a strong Coulomb repul…
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Cooper pairing and Coulomb repulsion are antagonists, producing distinct energy gaps in superconductors and Mott insulators. When a superconductor exchanges unpaired electrons with a quantum dot, its gap is populated by a pair of electron-hole symmetric Yu-Shiba-Rusinov excitations between doublet and singlet many-body states. The fate of these excitations in the presence of a strong Coulomb repulsion in the superconductor is unknown, but of importance in applications such as topological superconducting qubits and multi-channel impurity models. Here we couple a quantum dot to a superconducting island with a tunable Coulomb repulsion. We show that a strong Coulomb repulsion changes the singlet many-body state into a two-body state. It also breaks the electron-hole energy symmetry of the excitations, which thereby lose their Yu-Shiba-Rusinov character.
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Submitted 13 January, 2022; v1 submitted 26 January, 2021;
originally announced January 2021.
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Coherent manipulation of an Andreev spin qubit
Authors:
M. Hays,
V. Fatemi,
D. Bouman,
J. Cerrillo,
S. Diamond,
K. Serniak,
T. Connolly,
P. Krogstrup,
J. Nygård,
A. Levy Yeyati,
A. Geresdi,
M. H. Devoret
Abstract:
Two promising architectures for solid-state quantum information processing are electron spins in semiconductor quantum dots and the collective electromagnetic modes of superconducting circuits. In some aspects, these two platforms are dual to one another: superconducting qubits are more easily coupled but are relatively large among quantum devices $(\sim\mathrm{mm})$, while electrostatically-confi…
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Two promising architectures for solid-state quantum information processing are electron spins in semiconductor quantum dots and the collective electromagnetic modes of superconducting circuits. In some aspects, these two platforms are dual to one another: superconducting qubits are more easily coupled but are relatively large among quantum devices $(\sim\mathrm{mm})$, while electrostatically-confined electron spins are spatially compact ($\sim \mathrm{μm}$) but more complex to link. Here we combine beneficial aspects of both platforms in the Andreev spin qubit: the spin degree of freedom of an electronic quasiparticle trapped in the supercurrent-carrying Andreev levels of a Josephson semiconductor nanowire. We demonstrate coherent spin manipulation by combining single-shot circuit-QED readout and spin-flipping Raman transitions, finding a spin-flip time $T_S = 17~\mathrm{μs}$ and a spin coherence time $T_{2E}=52~\mathrm{ns}$. These results herald a new spin qubit with supercurrent-based circuit-QED integration and further our understanding and control of Andreev levels -- the parent states of Majorana zero modes -- in semiconductor-superconductor heterostructures.
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Submitted 17 January, 2021;
originally announced January 2021.
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Magnetic-Field-Compatible Superconducting Transmon Qubit
Authors:
A. Kringhøj,
T. W. Larsen,
O. Erlandsson,
W. Uilhoorn,
J. G. Kroll,
M. Hesselberg,
R. P. G. McNeil,
P. Krogstrup,
L. Casparis,
C. M. Marcus,
K. D. Petersson
Abstract:
We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The qubit transition frequency exhibits periodic oscillations with magnetic field, consistent with interference effects due to the magnetic flux threading the cross section of the proximitized semiconductor nanowire junction. As induced superconductivity revives, additional coh…
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We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The qubit transition frequency exhibits periodic oscillations with magnetic field, consistent with interference effects due to the magnetic flux threading the cross section of the proximitized semiconductor nanowire junction. As induced superconductivity revives, additional coherent modes emerge at high magnetic fields, which we attribute to the interaction of the qubit and low-energy Andreev states.
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Submitted 13 January, 2021;
originally announced January 2021.
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Multiterminal Quantized Conductance in InSb Nanocrosses
Authors:
Sabbir A. Khan,
Lukas Stampfer,
Timo Mutas,
Jung-Hyun Kang,
Peter Krogstrup,
Thomas S. Jespersen
Abstract:
By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy. Low-temperature electrical measurements of InSb nanocross devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. T…
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By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy. Low-temperature electrical measurements of InSb nanocross devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the nanocross junction is connected by few-channel quantum point contacts in the connecting nanowire terminals, we show that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on nanocrosses, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson Junctions.
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Submitted 7 January, 2021;
originally announced January 2021.
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Electronic properties of InAs/EuS/Al hybrid nanowires
Authors:
Chun-Xiao Liu,
Sergej Schuwalow,
Yu Liu,
Kostas Vilkelis,
A. L. R. Manesco,
P. Krogstrup,
Michael Wimmer
Abstract:
We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essent…
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We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes, and that the topological phase can be optimized by external gating. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulation.
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Submitted 10 December, 2020; v1 submitted 12 November, 2020;
originally announced November 2020.
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Andreev Modes from Phase Winding in a Full-shell Nanowire-based Transmon
Authors:
A. Kringhøj,
G. W. Winkler,
T. W. Larsen,
D. Sabonis,
O. Erlandsson,
P. Krogstrup,
B. van Heck,
K. D. Petersson,
C. M. Marcus
Abstract:
We investigate transmon qubits made from semiconductor nanowires with a fully surrounding superconducting shell. In the regime of reentrant superconductivity associated with the destructive Little-Parks effect, numerous coherent transitions are observed in the first reentrant lobe, where the shell carries 2π winding of superconducting phase, and are absent in the zeroth lobe. As junction density w…
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We investigate transmon qubits made from semiconductor nanowires with a fully surrounding superconducting shell. In the regime of reentrant superconductivity associated with the destructive Little-Parks effect, numerous coherent transitions are observed in the first reentrant lobe, where the shell carries 2π winding of superconducting phase, and are absent in the zeroth lobe. As junction density was increased by gate voltage, qubit coherence was suppressed then lost in the first lobe. These observations and numerical simulations highlight the role of winding-induced Andreev states in the junction.
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Submitted 23 August, 2020;
originally announced August 2020.
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Triplet-blockaded Josephson supercurrent in double quantum dots
Authors:
Daniël Bouman,
Ruben J. J. van Gulik,
Gorm Steffensen,
Dávid Pataki,
Péter Boross,
Peter Krogstrup,
Jesper Nygård,
Jens Paaske,
András Pályi,
Attila Geresdi
Abstract:
Serial double quantum dots created in semiconductor nanostructures provide a versatile platform for investigating two-electron spin quantum states, which can be tuned by electrostatic gating and an external magnetic field. In this work, we directly measure the supercurrent reversal between adjacent charge states of an InAs nanowire double quantum dot with superconducting leads, in good agreement w…
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Serial double quantum dots created in semiconductor nanostructures provide a versatile platform for investigating two-electron spin quantum states, which can be tuned by electrostatic gating and an external magnetic field. In this work, we directly measure the supercurrent reversal between adjacent charge states of an InAs nanowire double quantum dot with superconducting leads, in good agreement with theoretical models. In the even charge parity sector, we observe a supercurrent blockade with increasing magnetic field, corresponding to the spin singlet to triplet transition. Our results demonstrate a direct spin to supercurrent conversion, the superconducting equivalent of the Pauli spin blockade. This effect can be exploited in hybrid quantum architectures coupling the quantum states of spin systems and superconducting circuits.
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Submitted 4 January, 2021; v1 submitted 10 August, 2020;
originally announced August 2020.
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Nontopological zero-bias peaks in full-shell nanowires induced by flux tunable Andreev states
Authors:
Marco Valentini,
Fernando Peñaranda,
Andrea Hofmann,
Matthias Brauns,
Robert Hauschild,
Peter Krogstrup,
Pablo San-Jose,
Elsa Prada,
Ramón Aguado,
Georgios Katsaros
Abstract:
A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements, and not the full-shell nanowire itself. Short tunneling regions never show s…
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A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements, and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do. This can be understood in terms of quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov regime. The intricate magnetic field dependence of the Andreev levels, through both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks, features that could be easily misinterpreted as originating from Majorana zero modes, but are unrelated to topological superconductivity.
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Submitted 10 August, 2021; v1 submitted 5 August, 2020;
originally announced August 2020.
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Quantum-Dot Parity Effects in Trivial and Topological Josephson Junctions
Authors:
D. Razmadze,
E. C. T. O'Farrell,
P. Krogstrup,
C. M. Marcus
Abstract:
An odd-occupied quantum dot in a Josephson junction can flip transmission phase, creating a π-junction. When the junction couples topological superconductors, no phase flip is expected. We investigate this and related effects in a full-shell hybrid interferometer, using gate voltage to control dot-junction parity and axial magnetic flux to control the transition from trivial to topological superco…
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An odd-occupied quantum dot in a Josephson junction can flip transmission phase, creating a π-junction. When the junction couples topological superconductors, no phase flip is expected. We investigate this and related effects in a full-shell hybrid interferometer, using gate voltage to control dot-junction parity and axial magnetic flux to control the transition from trivial to topological superconductivity. Enhanced zero-bias conductance and critical current for odd parity in the topological phase reflects hybridization of the confined spin with zero-energy modes in the leads.
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Submitted 30 May, 2020; v1 submitted 24 May, 2020;
originally announced May 2020.
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Destructive Little-Parks Effect in a Full-Shell Nanowire-based Transmon
Authors:
Deividas Sabonis,
Oscar Erlandsson,
Anders Kringhøj,
Bernard van Heck,
Thorvald W. Larsen,
Ivana Petkovic,
Peter Krogstrup,
Karl D. Petersson,
Charles M. Marcus
Abstract:
A semiconductor transmon with an epitaxial Al shell fully surrounding an InAs nanowire core is investigated in the low $E_J/E_C$ regime. Little-Parks oscillations as a function of flux along the hybrid wire axis are destructive, creating lobes of reentrant superconductivity separated by a metallic state at a half-quantum of applied flux. In the first lobe, phase winding around the shell can induce…
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A semiconductor transmon with an epitaxial Al shell fully surrounding an InAs nanowire core is investigated in the low $E_J/E_C$ regime. Little-Parks oscillations as a function of flux along the hybrid wire axis are destructive, creating lobes of reentrant superconductivity separated by a metallic state at a half-quantum of applied flux. In the first lobe, phase winding around the shell can induce topological superconductivity in the core. Coherent qubit operation is observed in both the zeroth and first lobes. Splitting of parity bands by coherent single-electron coupling across the junction is not resolved beyond line broadening, placing a bound on Majorana coupling, $E_M/h$ < 10 MHz, much smaller than the Josephson coupling $E_J/h$ ~ 4.7 GHz.
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Submitted 4 May, 2020;
originally announced May 2020.
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Au-Assisted Substrate-Faceting for Inclined Nanowire Growth
Authors:
Jung-Hyun Kang,
Filip Krizek,
Magdalena Zaluska-Kotur,
Peter Krogstrup,
Perla Kacman,
Haim Beidenkopf,
Hadas Shtrikman
Abstract:
We study the role of gold droplets in the initial stage of nanowire growth via the vapor liquid solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial role that necessarily precedes the nanowire emergence, that is, they assist the nucleation of nanocraters with strongly faceted 111B side walls. Only once these facets become suffic…
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We study the role of gold droplets in the initial stage of nanowire growth via the vapor liquid solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial role that necessarily precedes the nanowire emergence, that is, they assist the nucleation of nanocraters with strongly faceted 111B side walls. Only once these facets become sufficiently large and regular, the gold droplets start nucleating and guiding the growth of nanowires. We show that this dual role of the gold droplets can be detected and monitored by high energy electron diffraction during growth. Moreover, gold induced formation of craters and the onset of nanowires growth on the 111B facets inside the craters are confirmed by the results of Monte Carlo simulations. The detailed insight into the growth mechanism of inclined nanowires will help to engineer new and complex nanowire based device architectures.
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Submitted 15 April, 2020;
originally announced April 2020.
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A Parity-Protected Superconductor-Semiconductor Qubit
Authors:
T. W. Larsen,
M. E. Gershenson,
L. Casparis,
A. Kringhøj,
N. J. Pearson,
R. P. G. McNeil,
F. Kuemmeth,
P. Krogstrup,
K. D. Petersson,
C. M. Marcus
Abstract:
Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by…
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Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by two such junctions, gate-tuned into balance and frustrated by a half-quantum of applied flux, yields a cos(2φ) Josephson element, reflecting coherent transport of pairs of Cooper pairs. We demonstrate that relaxation of the qubit can be suppressed tenfold by tuning into the protected regime.
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Submitted 31 July, 2020; v1 submitted 8 April, 2020;
originally announced April 2020.
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Zero-field Topological Superconductivity in Ferromagnetic Hybrid Nanowires
Authors:
S. Vaitiekėnas,
Y. Liu,
P. Krogstrup,
C. M. Marcus
Abstract:
We report transport measurements and tunneling spectroscopy in hybrid nanowires with epitaxial layers of superconducting Al and the ferromagnetic insulator EuS, grown on semiconducting InAs nanowires. In devices where the Al and EuS covered facets overlap, we infer a remanent effective Zeeman field of order 1 T, and observe stable zero-bias conductance peaks in tunneling spectroscopy into the end…
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We report transport measurements and tunneling spectroscopy in hybrid nanowires with epitaxial layers of superconducting Al and the ferromagnetic insulator EuS, grown on semiconducting InAs nanowires. In devices where the Al and EuS covered facets overlap, we infer a remanent effective Zeeman field of order 1 T, and observe stable zero-bias conductance peaks in tunneling spectroscopy into the end of the nanowire, consistent with topological superconductivity at zero applied field. Hysteretic features in critical current and tunneling spectra as a function of applied magnetic field support this picture. Nanowires with non-overlapping Al and EuS covered facets do not show comparable features. Topological superconductivity in zero applied field allows new device geometries and types of control.
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Submitted 5 April, 2020;
originally announced April 2020.