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Mutual control of critical temperature, RRR, stress, and surface quality for sputtered Nb films
Authors:
E. V. Zikiy,
I. A. Stepanov,
S. V. Bukatin,
D. A. Baklykov,
M. I. Teleganov,
E. A. Krivko,
N. S. Smirnov,
I. A. Ryzhikov,
S. P. Bychkov,
S. A. Kotenkov,
N. D. Korshakov,
J. A. Agafonova,
I. A. Rodionov
Abstract:
Superconducting single quantum logic integrated circuits traditionally exploit magnetron sputtered niobium thin films on silicon oxide substrates. The sputtering depends on multiple process parameters, which dramatically affect mechanical, electrical, and cryogenic properties of Nb thin films. In this work, we focus on the comprehensive relationship study between 200-nm Nb film characteristics and…
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Superconducting single quantum logic integrated circuits traditionally exploit magnetron sputtered niobium thin films on silicon oxide substrates. The sputtering depends on multiple process parameters, which dramatically affect mechanical, electrical, and cryogenic properties of Nb thin films. In this work, we focus on the comprehensive relationship study between 200-nm Nb film characteristics and their intrinsic stress. It is shown that there is a critical value of the working pressure pcritical at the fixed sputtering power above which stress in the film relaxes whereas the film properties degrade significantly. Below pcritical one can control intrinsic stress in the wide range from -400 MPa to +600 MPa maintaining perfect film surface with a 0.8 nm roughness (Rq), electrical resistivity less than 20 uOhm*cm, critical superconducting transition temperature above 8.9 K and residual resistance ratio over 6.4. We suggest a modified kinetic model to predict Nb films stress with the linear dependence of high-energy parameters on the working pressure replaced with an exponential one, which allowed reduction of the approximation error from 20 to 8%.
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Submitted 5 February, 2025;
originally announced February 2025.
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Angstrom-scale ion-beam engineering of ultrathin buried oxides for quantum and neuro-inspired computing
Authors:
N. Smirnov,
E. Krivko,
D. Moskaleva,
D. Moskalev,
A. Solovieva,
V. Echeistov,
E. Zikiy,
N. Korshakov,
A. Ivanov,
E. Malevannaya,
A. Matanin,
V. Polozov,
M. Teleganov,
N. Zhitkov,
R. Romashkin,
I. Korobenko,
A. Yanilkin,
A. Lebedev,
I. Ryzhikov,
A. Andriyash,
I. Rodionov
Abstract:
Multilayer nanoscale systems incorporating buried ultrathin tunnel oxides, 2D materials, and solid electrolytes are crucial for next-generation logics, memory, quantum and neuro-inspired computing. Still, an ultrathin layer control at angstrom scale is challenging for cutting-edge applications. Here we introduce a scalable approach utilizing focused ion-beam annealing for buried ultrathin oxides e…
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Multilayer nanoscale systems incorporating buried ultrathin tunnel oxides, 2D materials, and solid electrolytes are crucial for next-generation logics, memory, quantum and neuro-inspired computing. Still, an ultrathin layer control at angstrom scale is challenging for cutting-edge applications. Here we introduce a scalable approach utilizing focused ion-beam annealing for buried ultrathin oxides engineering with angstrom-scale thickness control. Our molecular dynamics simulations of Ne+ irradiation on Al/a-AlOx/Al structure confirms the pivotal role of ion generated crystal defects. We experimentally demonstrate its performance on Josephson junction tunning in the resistance range of 2 to 37% with a standard deviation of 0.86% across 25x25 mm chip. Moreover, we showcase +-17 MHz frequency control (+-0.172 A tunnel barrier thickness) for superconducting transmon qubits with coherence times up to 500 us, which is promising for useful fault-tolerant quantum computing. This work ensures ultrathin multilayer nanosystems engineering at the ultimate scale by depth-controlled crystal defects generation.
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Submitted 21 August, 2024; v1 submitted 19 August, 2024;
originally announced August 2024.
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Wiring surface loss of a superconducting transmon qubit
Authors:
Nikita S. Smirnov,
Elizaveta A. Krivko,
Anastasiya A. Solovieva,
Anton I. Ivanov,
Ilya A. Rodionov
Abstract:
Quantum processors using superconducting qubits suffer from dielectric loss leading to noise and dissipation. Qubits are usually designed as large capacitor pads connected to a non-linear Josephson junction (or SQUID) by a superconducting thin metal wiring. Here, we report on finite-element simulation and experimental results confirming that more than 50% of surface loss in transmon qubits can ori…
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Quantum processors using superconducting qubits suffer from dielectric loss leading to noise and dissipation. Qubits are usually designed as large capacitor pads connected to a non-linear Josephson junction (or SQUID) by a superconducting thin metal wiring. Here, we report on finite-element simulation and experimental results confirming that more than 50% of surface loss in transmon qubits can originated from Josephson junctions wiring and can limit qubit relaxation time. Extracting dielectric loss tangents capacitor pads and wiring based on their participation ratios, we show dominant surface loss of wiring can occur for real qubits designs. Then, we simulate a qubit coupled to a bath of individual TLS defects and show that only a small fraction (~18%) of coupled defects is located within the wiring interfaces, however, their coupling strength is much higher due to stronger electromagnetic field. Finally, we fabricate six tunable floating transmon qubits and experimentally demonstrate up to 20% improvement in qubit quality factor by wiring design optimization.
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Submitted 28 November, 2023;
originally announced November 2023.
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Improving Josephson junction reproducibility for superconducting quantum circuits: junction area fluctuation
Authors:
A. A. Pishchimova,
N. S. Smirnov,
D. A. Ezenkova,
E. A. Krivko,
E. V. Zikiy,
D. O. Moskalev,
A. I. Ivanov,
N. D. Korshakov,
I. A. Rodionov
Abstract:
Josephson superconducting qubits and parametric amplifiers are prominent examples of superconducting quantum circuits that have shown rapid progress in recent years. With the growing complexity of such devices, the requirements for reproducibility of their electrical properties across a chip have become stricter. Thus, the critical current $I_c$ variation of the Josephson junction, as the most imp…
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Josephson superconducting qubits and parametric amplifiers are prominent examples of superconducting quantum circuits that have shown rapid progress in recent years. With the growing complexity of such devices, the requirements for reproducibility of their electrical properties across a chip have become stricter. Thus, the critical current $I_c$ variation of the Josephson junction, as the most important electrical parameter, needs to be minimized. Critical current, in turn, is related to normal-state resistance the Ambegaokar-Baratoff formula, which can be measured at room temperature. Here, we focus on the dominant source of Josephson junction critical current non-uniformity junction area variation. We optimized Josephson junctions fabrication process and demonstrate resistance variation of $9.8-4.4\%$ and $4.8-2.3\%$ across $22{\times}22$ $mm^2$ and $5{\times}10$ $mm^2$ chip areas, respectively. For a wide range of junction areas from $0.008$ $μm^2$ to $0.12$ $μm^2$ we ensure a small linewidth standard deviation of $4$ $nm$ measured over 4500 junctions with linear dimensions from $80$ to $680$ $nm$. The developed process was tested on superconducting highly coherent transmon qubits $(T_1 > 100\:μs)$ and a nonlinear asymmetric inductive element parametric amplifier.
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Submitted 27 October, 2022;
originally announced October 2022.