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Photophysics of defect-passivated quasi-2D (PEA)2PbBr4 perovskite using an organic small-molecule
Authors:
Jafar I. Khan,
Murali Gedda,
Mingcong Wang,
Emre Yengel,
Joshua A. Kreß,
Yana Vaynzof,
Thomas D. Anthopoulos,
Frédéric Laquai
Abstract:
2D Ruddlesden - Popper perovskites are promising candidates for energy harvesting applications due to their tunable optical properties and excellent ambient stability. Moreover, they are solution-processable and compatible with upscalable manufacturing via various printing techniques. Unfortunately, such methods often induce large degrees of heterogeneity due to poorly controlled crystallization.…
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2D Ruddlesden - Popper perovskites are promising candidates for energy harvesting applications due to their tunable optical properties and excellent ambient stability. Moreover, they are solution-processable and compatible with upscalable manufacturing via various printing techniques. Unfortunately, such methods often induce large degrees of heterogeneity due to poorly controlled crystallization. Here, we address this issue by blending the well-known 2D perovskite (PEA)2PbBr4 with an organic small-molecule, namely C8-BTBT, employed as an additive with different blending ratios. Using terahertz (THz) absorption and temperature-dependent photoluminescence (PL) spectroscopy techniques we observe that with the C8-BTBT additive the photophysical properties are altered while the perovskite structure in the film remains unaffected. More precisely, the inclusion of trace amounts of C8-BTBT in the hybrid films results in defect passivation at perovskite platelet boundaries and at the surfaces, as indicated by increased carrier lifetimes and substantially increased photoluminescence quantum yields (PLQY). This in turn improves the responsivity of photodetectors using the 2D perovskite as active layer. Our study highlights a straightforward strategy for fabricating high-quality 2D perovskites via large-area processing techniques.
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Submitted 17 April, 2024;
originally announced April 2024.
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Efficient Spatial Redistribution of Quantum Dot Spontaneous Emission from 2D Photonic Crystals
Authors:
M. Kaniber,
A. Kress,
M. Bichler,
R. Meyer,
M. -C. Amann,
J. J. Finley
Abstract:
We investigate the modification of the spontaneous emission dynamics and external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localised photonic states in GaAs 2D-photonic crystals. The 2D-photonic bandgap is shown to give rise to a 5-10 times enhancement of the external quantum efficiency whilst the spontaneous emission rate is simultaneously reduced by a c…
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We investigate the modification of the spontaneous emission dynamics and external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localised photonic states in GaAs 2D-photonic crystals. The 2D-photonic bandgap is shown to give rise to a 5-10 times enhancement of the external quantum efficiency whilst the spontaneous emission rate is simultaneously reduced by a comparable factor. Our findings are quantitatively explained by a modal redistribution of spontaneous emission due to the modified local density of photonic states. The results suggest that quantum dots embedded within 2D-photonic crystals are suitable for practical single photon sources with high external efficiency.
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Submitted 5 June, 2007;
originally announced June 2007.
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Manipulation of the Spontaneous Emission Dynamics of Quantum Dots in 2D Photonic Crystals
Authors:
A. Kress,
F. Hofbauer,
N. Reinelt,
H. J. Krenner,
R. Meyer,
G. Boehm,
J. J. Finley
Abstract:
We demonstrate the ability to control the spontaneous emission dynamics of self-assembled quantum dots via the local density of optical modes in 2D-photonic crystals. We show that an incomplete 2D photonic bandgap is sufficient to significantly lengthen the spontaneous emission lifetime ($>2\times$) over a wide bandwidth ($Δλ\geq40$ nm). For dots that are both \textit{spectrally} and \textit{spa…
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We demonstrate the ability to control the spontaneous emission dynamics of self-assembled quantum dots via the local density of optical modes in 2D-photonic crystals. We show that an incomplete 2D photonic bandgap is sufficient to significantly lengthen the spontaneous emission lifetime ($>2\times$) over a wide bandwidth ($Δλ\geq40$ nm). For dots that are both \textit{spectrally} and \textit{spatially} coupled to strongly localized ($V_{mode}\sim1.5(λ/n)^{3}$), high $Q\sim2700$ optical modes, we have directly measured a strong Purcell enhanced shortening of the emission lifetime $\geq5.6\times$, limited only by our temporal resolution. Analysis of the spectral dependence of the recombination dynamics shows a maximum lifetime shortening of $19\pm4$. From the directly measured enhancement and suppression we show that the single mode coupling efficiency for quantum dots in such structures is at least $β=92%$ and is estimated to be as large as $\sim97%$.
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Submitted 8 April, 2005; v1 submitted 4 January, 2005;
originally announced January 2005.
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Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
Authors:
H. J. Krenner,
M. Sabathil,
E. C. Clark,
A. F. Kress,
D. Schuh,
M. Bichler,
G. Abstreiter,
J. J. Finley
Abstract:
We report the direct observation of quantum coupling in individual quantum dot molecules and its manipulation using static electric fields. A pronounced anti-crossing of different excitonic transitions is observed as the electric field is tuned. Comparison of our experimental results with theory shows that the observed anti-crossing occurs between excitons with predominant spatially \emph{direct…
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We report the direct observation of quantum coupling in individual quantum dot molecules and its manipulation using static electric fields. A pronounced anti-crossing of different excitonic transitions is observed as the electric field is tuned. Comparison of our experimental results with theory shows that the observed anti-crossing occurs between excitons with predominant spatially \emph{direct} and \emph{indirect} character. The electron component of the exciton wavefunction is shown to have molecular character at the anti-crossing and the quantum coupling strength is deduced optically. In addition, we determine the dependence of the coupling strength on the inter-dot separation and identify a field driven transition of the nature of the molecular ground state.
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Submitted 21 December, 2004; v1 submitted 8 October, 2004;
originally announced October 2004.
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A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs
Authors:
J. Bauer,
D. Schuh,
E. Uccelli,
R. Schulz,
A. Kress,
F. Hofbauer,
J. J. Finley,
G. Abstreiter
Abstract:
We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements dem…
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We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.
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Submitted 12 March, 2004;
originally announced March 2004.