A strain-tunable quantum dot embedded in a nanowire antenna
Authors:
P. E. Kremer,
A. C. Dada,
P. Kumar,
Y. Ma,
S. Kumar,
E. Clarke,
B. D. Gerardot
Abstract:
We demonstrate an elastically-tunable self-assembled quantum dot in a nanowire antenna that emits single photons with resolution-limited spectral linewidths. The single-photon device is comprised of a single quantum dot embedded in a top-down fabricated nanowire waveguide integrated onto a piezoelectric actuator. Non-resonant excitation leads to static (fluctuating) charges likely at the nanowire…
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We demonstrate an elastically-tunable self-assembled quantum dot in a nanowire antenna that emits single photons with resolution-limited spectral linewidths. The single-photon device is comprised of a single quantum dot embedded in a top-down fabricated nanowire waveguide integrated onto a piezoelectric actuator. Non-resonant excitation leads to static (fluctuating) charges likely at the nanowire surface, causing DC Stark shifts (inhomogeneous broadening); for low excitation powers, the effects are not observed and resolution-limited linewidths are obtained. Despite significant strain-field relaxation in the high-aspect-ratio nanowires, we achieve up to 1.2 meV tuning of a dot's transition energy. Single-photon sources with high brightness, resolution-limited linewidths, and wavelength tunability are promising for future quantum technologies.
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Submitted 13 November, 2014; v1 submitted 10 November, 2014;
originally announced November 2014.
Exciton fine-structure splitting of telecom wavelength single quantum dots: statistics and external strain tuning
Authors:
Luca Sapienza,
Ralph N. E. Malein,
Christopher E. Kuklewicz,
Peter E. Kremer,
Kartik Srinivasan,
Andrew Griffiths,
Edmund Clarke,
Ming Gong,
Richard J. Warburton,
Brian D. Gerardot
Abstract:
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1μm < λ< 1.3 μm) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 μeV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slope…
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In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1μm < λ< 1.3 μm) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 μeV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.
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Submitted 18 September, 2013; v1 submitted 5 March, 2013;
originally announced March 2013.
