Curvature-mediated spin textures in magnetic multi-layered nanotubes
Authors:
Elisabeth Josten,
David Raftrey,
Aurelio Hierro-Rodriguez,
Andrea Sorrentino,
Lucia Aballe,
Marta Lipińska-Chwałek,
Thomas Jansen,
Katja Höflich,
Hanno Kröncke,
Catherine Dubourdieu,
Daniel E. Bürgler,
Joachim Mayer,
Peter Fischer
Abstract:
The scientific and technological exploration of artificially designed three-dimensional magnetic nanostructures opens the path to exciting novel physical phenomena, originating from the increased complexity in spin textures, topology, and frustration in three dimensions. Theory predicts that the equilibrium magnetic ground state of two-dimensional systems which reflects the competition between sym…
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The scientific and technological exploration of artificially designed three-dimensional magnetic nanostructures opens the path to exciting novel physical phenomena, originating from the increased complexity in spin textures, topology, and frustration in three dimensions. Theory predicts that the equilibrium magnetic ground state of two-dimensional systems which reflects the competition between symmetric (Heisenberg) and antisymmetric (Dzyaloshinskii-Moriya interaction (DMI)) exchange interaction is significantly modified on curved surfaces when the radius of local curvature becomes comparable to fundamental magnetic length scales. Here, we present an experimental study of the spin texture in an 8 nm thin magnetic multilayer with growth-induced in-plane anisotropy and DMI deposited onto the curved surface of a 1.8 μm long non-magnetic carbon nanowire with a 67 nm radius. Using magnetic soft x-ray tomography the three-dimensional spin configuration in this nanotube was retrieved with about 30nm spatial resolution. The transition between two vortex configurations on the two ends of the nanotube with opposite circulation occurs through a domain wall that is aligned at an inclined angle relative to the wire axis. Three-dimensional micromagnetic simulations support the experimental observations and represent a visualization of the curvature-mediated DMI. They also allow a quantitative estimate of the DMI value for the magnetic multilayered nanotube.
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Submitted 24 March, 2021;
originally announced March 2021.
Issues related to the usage of nitrogen as carrier gas for the MOVPE growth of GaSb/InAs heterostructures on InAs pseudosubstrates
Authors:
Hanno Kroencke,
Agnieszka Gocalinska,
Valeria Dimastrodonato,
Marina Manganaro,
Emanuele Pelucchi
Abstract:
GaSb/InAs/GaSb layer stacks have been grown on InAs metamorphic substrates (pseudosubstrates) by MOVPE, using nitrogen as major carrier gas. We demonstrate that GaSb growth by nitrogen MOVPE on InAs metamorphic substrates (and on InAs wafers) is possible in a very narrow range of growth parameters. As demonstrators, GaSb/InAs/GaSb structures were grown for electron mobility tests, obtaining (unint…
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GaSb/InAs/GaSb layer stacks have been grown on InAs metamorphic substrates (pseudosubstrates) by MOVPE, using nitrogen as major carrier gas. We demonstrate that GaSb growth by nitrogen MOVPE on InAs metamorphic substrates (and on InAs wafers) is possible in a very narrow range of growth parameters. As demonstrators, GaSb/InAs/GaSb structures were grown for electron mobility tests, obtaining (unintentional) 2D electron gas densities in the order of 9/5x10e12 cm(e-2) and mobilities up to 1.2/1.8x10e4 cm(e2)/Vs at room and liquid nitrogen temperature respectively. We show that it is beneficial to have some hydrogen in the carrier gas mixture for GaSb growth to achieve good crystal quality, morphology and electrical properties. Furthermore, an unexpected and previously unreported decomposition process of GaSb is observed at relatively low growth temperatures under the supply of the precursors for InAs epitaxial overgrowth. This nevertheless gets suppressed at even lower growth temperatures.
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Submitted 24 June, 2016;
originally announced June 2016.
