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Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (CoFeB)x(LiNbO3)100-x nanocomposite
Authors:
M. N. Martyshov,
A. V. Emelyanov,
V. A. Demin,
K. E. Nikiruy,
A. A. Minnekhanov,
S. N. Nikolaev,
A. N. Taldenkov,
A. V. Ovcharov,
M. Yu. Presnyakov,
A. V. Sitnikov,
A. L. Vasiliev,
P. A. Forsh,
A. B. Granovskiy,
P. K. Kashkarov,
M. V. Kovalchuk,
V. V. Rylkov
Abstract:
Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogr…
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Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogranules of 3-6 nm in size, contained a large number of dispersed Co (Fe) atoms (up to ~10^22 cm^-3). Measurements were performed both in DC and AC (frequency range 5-13 MHz) regimes. When switching structures from high-resistance (Roff) to low-resistance (Ron) state, the effect of a strong increase in their capacity was found, which reaches 8 times at x $\approx$ 15 at. % and the resistance ratio Roff/Ron $\approx$ 40. The effect is explained by the synergetic combination of the multifilamentary character of resistive switching (RS) and structural features of the samples associated, in particular, with the formation of high-resistance and strongly polarizable LiNbO3 layer near the bottom electrode of the structures. The proposed model is confirmed by investigations of RS of two-layer nanoscale M/NC/LiNbO3/M structures as well as by studies of the magnetization of M/NC/M structures in the pristine state and after RS.
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Submitted 17 August, 2020; v1 submitted 8 December, 2019;
originally announced December 2019.
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Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells
Authors:
B. A. Aronzon,
M. V. Kovalchuk,
E. M. Pashaev,
M. A. Chuev,
V. V. Kvardakov,
I. A. Subbotin,
V. V. Rylkov,
M. A. Pankov,
A. S. Lagutin,
B. N. Zvonkov,
Yu. A. Danilov,
O. V. Vihrova,
A. V. Lashkul,
R. Laiho
Abstract:
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical…
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We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both "metallic" and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its "intrinsic" mechanism in ferromagnetic systems.
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Submitted 31 July, 2007;
originally announced August 2007.
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Theory and Applications of X-ray Standing Waves in Real Crystals
Authors:
I. A. Vartanyants,
M. V. Kovalchuk
Abstract:
Theoretical aspects of x-ray standing wave method for investigation of the real structure of crystals are considered in this review paper. Starting from the general approach of the secondary radiation yield from deformed crystals this theory is applied to different concreat cases. Various models of deformed crystals like: bicrystal model, multilayer model, crystals with extended deformation fiel…
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Theoretical aspects of x-ray standing wave method for investigation of the real structure of crystals are considered in this review paper. Starting from the general approach of the secondary radiation yield from deformed crystals this theory is applied to different concreat cases. Various models of deformed crystals like: bicrystal model, multilayer model, crystals with extended deformation field are considered in detailes. Peculiarities of x-ray standing wave behavior in different scattering geometries (Bragg, Laue) are analysed in detailes. New possibilities to solve the phase problem with x-ray standing wave method are discussed in the review. General theoretical approaches are illustrated with a big number of experimental results.
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Submitted 4 December, 2000;
originally announced December 2000.
