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Enhanced Electromechanical Properties of Solution-Processed K$_{0.5}$Na$_{0.5}$NbO$_{3}$ Thin Films
Authors:
Nagamalleswara Rao Alluri,
Longfei Song,
Stephanie Girod,
Barnik Mandal,
Juliette Cardoletti,
Vid Bobnar,
Torsten Granzow,
Veronika Kovacova,
Adrian-Marie Philippe,
Emmanuel Defay,
Sebastjan Glinsek
Abstract:
K$_{0.5}$Na$_{0.5}$NbO$_{3}$ is among the most promising lead-free piezoelectrics. While its sputtered films match the performance of the champion piezoelectric Pb(Zr,Ti)O$_{3}$, processing of high-quality, reproducible, and time-stable solution-processed K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films remains challenging. Here, we report 1 $μ$m-thick Mn-doped K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films prepared throug…
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K$_{0.5}$Na$_{0.5}$NbO$_{3}$ is among the most promising lead-free piezoelectrics. While its sputtered films match the performance of the champion piezoelectric Pb(Zr,Ti)O$_{3}$, processing of high-quality, reproducible, and time-stable solution-processed K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films remains challenging. Here, we report 1 $μ$m-thick Mn-doped K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films prepared through a chemical solution deposition process, which have perfectly dense microstructure and uniform composition across their thickness. The films exhibit a high transverse piezoelectric coefficient (e$_{31,f}$ = -14.8 C/m$^{2}$), high dielectric permittivity ($ε_{r}$ = 920), low dielectric losses (tan$δ$ = 0.05) and can withstand electric fields up to at least 1 MV/cm. The functional properties show excellent stability over time, and the synthesis process is reproducible. The results demonstrate the high potential of Mn-doped K$_{0.5}$Na$_{0.5}$NbO$_{3}$ films to become a replacement for lead-based Pb(Zr,Ti)O$_{3}$ films in piezoelectric applications.
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Submitted 28 February, 2025;
originally announced February 2025.
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Stable antiferroelectric phase in calcium-doped lead scandium tantalate
Authors:
Youri Nouchokgwe,
Natalya S. Fedorova,
Pranab Biswas,
Veronika Kovacova,
Ivana Gorican,
Silvo Drmovsek,
Binayak Mukherjee,
Uros Prah,
Guillaume F. Nataf,
Torsten Granzow,
Mael Guennou,
Hana Ursic,
Jorge Iniguez-Gonzalez,
Emmanuel Defay
Abstract:
Antiferroelectrics are valuable dielectric materials, offering promise for both high energy storage and solid-state caloric cooling applications. However, few antiferroelectrics are known or available. Therefore, it is crucial to discover or design materials showing antiferroelectric behaviour. In this study, we fabricated highly ordered lead scandium tantalate ceramics doped with calcium. From ca…
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Antiferroelectrics are valuable dielectric materials, offering promise for both high energy storage and solid-state caloric cooling applications. However, few antiferroelectrics are known or available. Therefore, it is crucial to discover or design materials showing antiferroelectric behaviour. In this study, we fabricated highly ordered lead scandium tantalate ceramics doped with calcium. From calorimetry and polarization-electric field loops, we demonstrate the effect of calcium on the thermal properties and phase transition sequences of lead scandium tantalate. We identify an antiferroelectric phase appearing at temperatures intermediate between the ferroelectric and paraelectric phases, which becomes increasingly stable as the calcium concentration increases. These findings are supported by density functional theory calculations and Raman spectroscopy. Finally, we propose a phase diagram for calcium-doped lead scandium tantalate. Our results highlight the potential of stabilizing antiferroelectricity in ferroelectric perovskite materials through A-site doping.
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Submitted 4 February, 2025;
originally announced February 2025.
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Highly Transparent Lead-Free Piezoelectric Haptic Device
Authors:
Longfei Song,
Sebastjan Glinsek,
Nagamalleswara Rao Alluri,
Veronika Kovacova,
Michele Melchiorr,
Alfredo Blazquez Martinez,
Barnik Mandal,
Juliette Cardoletti,
Emmanuel Defay
Abstract:
Acoustic haptic technology adds touch sensations to human-machine interfaces by integrating piezoelectric actuators onto touchscreens. Traditional piezoelectric haptic technologies use opaque lead-containing ceramics that are both toxic and visible. We have developed a highly transparent lead-free piezoelectric haptic device using potassium sodium niobate (KNN) and transparent conductive oxide thi…
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Acoustic haptic technology adds touch sensations to human-machine interfaces by integrating piezoelectric actuators onto touchscreens. Traditional piezoelectric haptic technologies use opaque lead-containing ceramics that are both toxic and visible. We have developed a highly transparent lead-free piezoelectric haptic device using potassium sodium niobate (KNN) and transparent conductive oxide thin films. The KNN film, grown on glass, exhibits a pure perovskite phase and a dense microstructure. This device achieves up to 80% transmittance, surpassing lead zirconate titanate (PZT) thin films. It generates an acoustic resonance at 16.5 kHz and produces a peak-to-peak displacement of 1.0 um at 28 V unipolar, making it suitable for surface rendering applications. This demonstrates the potential of transparent lead-free piezoelectric actuators as an effective alternative to conventional PZT haptic actuators.
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Submitted 13 May, 2025; v1 submitted 21 October, 2024;
originally announced October 2024.
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Direct electrocaloric characterization of ceramic films
Authors:
Uros Prah,
Matej Sadl,
Alvar Torello,
Pierre Lheritier,
Veronika Kovacova,
Hana Ursic,
Emmanuel Defay
Abstract:
Reliable and accurate characterization of the electrocaloric effect is necessary to understand the intrinsic properties of materials. To date, several methods have been developed to directly measure the electrocaloric effect. However, each of them has some limitations, making them less suitable for characterizing ceramic films, which rely almost exclusively on less accurate indirect methods. Here,…
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Reliable and accurate characterization of the electrocaloric effect is necessary to understand the intrinsic properties of materials. To date, several methods have been developed to directly measure the electrocaloric effect. However, each of them has some limitations, making them less suitable for characterizing ceramic films, which rely almost exclusively on less accurate indirect methods. Here, a new approach is proposed to address the process of rapid heat dissipation in ceramic films and to detect the electrically induced temperature change before it thermally bonds with the surrounding elements. By using a polymer substrate that slows heat dissipation to the substrate and fast infrared imaging, a substantial part of the adiabatic electrocaloric effect in Pb(Mg1/3Nb2/3)O3-based ceramic films is captured. Infrared imaging provides a robust technique to reduce the ratio between the adiabatic and the measured electrocaloric temperature change in micrometer-sized ceramic films to a single-digit number, ~3.5. The obtained results are validated with another direct thermometric method and compared with the results obtained with an indirect approach. Despite different measurement principles, the results obtained with the two direct methods agree well. The proposed approach is timely and could open a door to verify the predicted giant electrocaloric effects in ceramic films, thus accelerating the process of their integration into functional devices.
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Submitted 13 February, 2023;
originally announced February 2023.
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Birefringence induced by antiferroelectric switching in transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film
Authors:
Pranab Parimal Biswas,
Cosme Milesi-Brault,
Alfredo Blázquez Martínez,
Naveen Aruchamy,
Longfei Song,
Veronika Kovacova,
Sebastjan Glinsek,
Torsten Granzow,
Emmanuel Defay,
Mael Guennou
Abstract:
The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a non-polar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of $PbZr_{0.95}Ti_{0.05}O_{3}$. We use a transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film grown on…
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The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a non-polar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of $PbZr_{0.95}Ti_{0.05}O_{3}$. We use a transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film grown on $PbTiO_{3}/HfO_{2}/SiO_{2}$ with interdigitated electrodes to directly investigate changes in birefringence in a simple transmission geometry. In spite of the polycrystalline nature of the film and its moderate thickness, the field-induced transition produces a sizeable effect observable under a polarized microscope. The film in its polar phase is found to behave like a homogeneous birefringent medium. The time evolution of this field-induced birefringence provides information about irreversibilities in the antiferroelectric switching process and its slow dynamics. The change in birefringence has two main contributions, one that responds briskly (~ 0.5 s), and a slower one that rises and saturates over a period of as long as 30 minutes. Possible origins for this long saturation and relaxation times are discussed.
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Submitted 3 August, 2022;
originally announced August 2022.
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Correlation between electric-field-induced phase transition and piezoelectricity in lead zirconate titanate films
Authors:
V Kovacova,
N Vaxelaire,
G Le Rhun,
P Gergaud,
T Schmitz-Kempen,
E Defay
Abstract:
We observed that electric field induces phase transition from tetragonal to rhombohedral in polycrystalline morphotropic lead zirconate titanate (PZT) films, as reported in 2011 for bulk PZT. Moreover, we evidenced that this field-induced phase transition is strongly correlated with PZT film piezoelectric properties, that is to say the larger the phase transition, the larger the longitudinal piezo…
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We observed that electric field induces phase transition from tetragonal to rhombohedral in polycrystalline morphotropic lead zirconate titanate (PZT) films, as reported in 2011 for bulk PZT. Moreover, we evidenced that this field-induced phase transition is strongly correlated with PZT film piezoelectric properties, that is to say the larger the phase transition, the larger the longitudinal piezoelectric coefficient d 33,eff . Although d 33,eff is already comprised between as 150 to 170 pm/V, our observation suggests that one could obtain larger d 33,eff values, namely 250 pm/V, by optimizing the field-induced phase transition thanks to composition fine tuning.
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Submitted 26 January, 2015;
originally announced January 2015.
