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Giant odd-parity magnetoresistance from proximity-induced topological states
Authors:
Tomoki Hotta,
Le Duc Anh,
Takahiro Chiba,
Yohei Kota,
Masaaki Tanaka
Abstract:
Magnetoresistance typically exhibits even symmetry with respect to the magnetic field, owing to time reversal symmetry (TRS) as dictated by Onsager reciprocity relations. However, in certain systems where TRS is broken, magnetoresistance may acquire an odd component with respect to the magnetic field, referred to as odd parity magnetoresistance (OMR). To date, reported OMR values have been modest,…
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Magnetoresistance typically exhibits even symmetry with respect to the magnetic field, owing to time reversal symmetry (TRS) as dictated by Onsager reciprocity relations. However, in certain systems where TRS is broken, magnetoresistance may acquire an odd component with respect to the magnetic field, referred to as odd parity magnetoresistance (OMR). To date, reported OMR values have been modest, usually restricted to a few tens of percent even under high magnetic fields. Here, we report the discovery of a giant OMR reaching up to 1,150% under a relatively low field of 1 T in a heterostructure composed of 3 nm thick alpha Sn and a ferromagnetic semiconductor, (In,Fe)Sb. Although alpha Sn in this thickness range is a trivial narrow gap semiconductor, analysis of Shubnikov de Haas oscillations combined with ab initio calculations reveals the emergence of tilted topological surface states, induced via magnetic proximity from the (In,Fe)Sb layer. The observed OMR behavior is well explained by a Boltzmann transport model assuming the presence of oppositely tilted Weyl cones in the alpha Sn band structure. Our findings not only shed new light on the physics of OMR but also suggest promising avenues for its application in electronic and spintronic devices, such as ultrasensitive magnetic sensors.
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Submitted 30 July, 2025;
originally announced July 2025.
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Giant Spin-to-Charge Conversion by Tailoring Magnetically Proximitized Topological Dirac Semimetal
Authors:
Masayuki Ishida,
Soichiro Fukuoka,
Takahiro Chiba,
Yohei Kota,
Masaaki Tanaka,
Le Duc Anh
Abstract:
While ferromagnet and topological material bilayers are widely studied to obtain efficient spin charge conversion via topological surface states (TSS), the influence of the magnetic proximity effect (MPE) on the TSS evolution and conversion efficiency remains poorly understood. In this study, we experimentally probe and reveal the behavior of spin momentum locked TSS through spin pumping measureme…
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While ferromagnet and topological material bilayers are widely studied to obtain efficient spin charge conversion via topological surface states (TSS), the influence of the magnetic proximity effect (MPE) on the TSS evolution and conversion efficiency remains poorly understood. In this study, we experimentally probe and reveal the behavior of spin momentum locked TSS through spin pumping measurements in heterostructures composed of ferromagnetic Fe and the topological Dirac semimetal alpha Sn. As the alpha Sn thickness (tSn) increases from 9 to 35 nm, the Gilbert damping constant of the Fe layer exhibits a pronounced peak at tSn = 25 nm, followed by a decrease at greater thicknesses. Our rigorous theoretical analysis, combining analytical modeling and first principles calculations, attributes this behavior to the TSS disappearance at the Fe and alpha Sn interface and exchange gap opening on the opposite surface, both induced by the long range MPE and its influence on the spin charge conversion efficiency. At tSn = 25 nm, we demonstrate highly efficient spin charge conversion with an inverse Edelstein length of 3.14 nm, the highest value reported at room temperature for ferromagnet and topological material bilayers. These findings underscore the critical role of tuning TSS properties under MPE for advancing topological materials in spintronic applications.
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Submitted 23 July, 2025;
originally announced July 2025.
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Topological surface states induced by the magnetic proximity effect
Authors:
Soichiro Fukuoka,
Le Duc Anh,
Masayuki Ishida,
Tomoki Hotta,
Takahiro Chiba,
Yohei Kota,
Masaaki Tanaka
Abstract:
The combination of magnetism and topological properties in one material platform is attracting significant attention due to the potential of realizing low power consumption and error-robust electronic devices. Common practice is to start from a topological material with band inversion and incorporates ferromagnetism via chemical doping or magnetic proximity effect (MPE). In this work, we show that…
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The combination of magnetism and topological properties in one material platform is attracting significant attention due to the potential of realizing low power consumption and error-robust electronic devices. Common practice is to start from a topological material with band inversion and incorporates ferromagnetism via chemical doping or magnetic proximity effect (MPE). In this work, we show that a topological material is not necessary and that both ferromagnetism and band inversion can be established simultaneously in a trivial insulating material by MPE from a neighbouring ferromagnetic layer. This novel route is demonstrated using quantum transport measurements and first principles calculations in a heterostructure consisting of 5 nm thick FeOx/1 monolayer of FeAs/ 3 nm thick alpha Sn. The Shubnikov de Haas oscillations show that there is linear band dispersion with high mobility in the heterostructure even though a 3 nm thick alpha Sn single layer is a trivial semiconductor. Furthermore, first principles calculations reveal that band inversion indeed occurs in this heterostructure, suggesting that the observed linear band is a topological surface state within this inverted gap. This work significantly expands the foundation for realizing magnetic topological materials in a myriad of trivial narrow gap semiconductors.
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Submitted 11 July, 2025; v1 submitted 12 May, 2025;
originally announced May 2025.
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Magnetoelastic anisotropy in Heusler-type Mn$_{2-δ}$CoGa$_{1+δ}$ films
Authors:
Takahide Kubota,
Daichi Takano,
Yohei Kota,
Shaktiranjan Mohanty,
Keita Ito,
Mitsuhiro Matsuki,
Masahiro Hayashida,
Mingling Sun,
Yukiharu Takeda,
Yuji Saitoh,
Subhankar Bedanta,
Akio Kimura,
Koki Takanashi
Abstract:
Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetizatio…
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Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetization and thus minimizes the perpendicular magnetic anisotropy (PMA), in general. This study focuses on an inverse-type Heusler alloy, Mn$_{2-δ}$CoGa$_{1+δ}$ (MCG) with a small off-stoichiometry ($δ$) , which is expected to be a half-metallic material. We observed relatively large uniaxial magnetocrystalline anisotropy constant ($K_\mathrm{u}$) of the order of 10$^5$ J/m$^3$ at room temperature in MCG films with a small tetragonal distortion of a few percent. A positive correlation was confirmed between the $c/a$ ratio of lattice constants and $K_\mathrm{u}$. Imaging of magnetic domains using Kerr microscopy clearly demonstrated a change in the domain patterns along with $K_\mathrm{u}$. X-ray magnetic circular dichroism (XMCD) was employed using synchrotron radiation soft x-ray beam to get insight into the origin for PMA. Negligible angular variation of orbital magnetic moment ($Δm_\mathrm{orb}$) evaluated using the XMCD spectra suggested a minor role of the so-called Bruno's term to $K_\mathrm{u}$. Our first principles calculation reasonably explained the small $Δm_\mathrm{orb}$ and the positive correlation between the $c/a$ ratio and $K_\mathrm{u}$. The origin of the magnetocrystalline anisotropy was discussed based on the second-order perturbation theory in terms of the spin--orbit coupling, claiming that the mixing of the occupied $\uparrow$- and the unoccupied $\downarrow$-spin states is responsible for the PMA of the MCG films.
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Submitted 5 March, 2022; v1 submitted 25 August, 2021;
originally announced August 2021.
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Elemental topological Dirac semimetal α-Sn with high quantum mobility
Authors:
Le Duc Anh,
Kengo Takase,
Takahiro Chiba,
Yohei Kota,
Kosuke Takiguchi,
Masaaki Tanaka
Abstract:
α-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality α-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth…
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α-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality α-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth of α-Sn on InSb (001) with the highest quality thus far and reveal that it is a topological Dirac semimetal (TDS) by quantum transport investigations together with first-principles calculations. We realise unprecedentedly high quantum mobilities of both the surface state (30000 cm^2/Vs), which is ten times higher than the previously reported values, and the bulk heavy-hole (HH) state (1700 cm^2/Vs), which has never been obtained experimentally. These excellent features allow us, for the first time, to quantitatively characterise the nontrivial interfacial and bulk band structure of α-Sn via Shubnikov-de Haas oscillations at various temperatures and under various magnetic field directions. These results reveal the existence of a topological surface state (TSS) and a bulk HH band, both with nontrivial phase shifts, indicating that the TDS phase of α-Sn is established. Furthermore, we demonstrate a crossover from the TDS to a two-dimensional topological insulator (2D-TI) and a subsequent phase transition to a trivial insulator when varying the thickness of α-Sn. Our work indicates that α-Sn is an excellent model system to study novel topological phases and a prominent material candidate for topological devices.
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Submitted 28 May, 2021;
originally announced May 2021.
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Detecting quadrupole: a hidden source of magnetic anisotropy for Manganese alloys
Authors:
Jun Okabayashi,
Yoshio Miura,
Yohei Kota,
Kazuya Suzuki,
Akimasa Sakuma,
Shigemi Mizukami
Abstract:
Mn-based alloys exhibit unique properties in the spintronics materials possessing perpendicular magnetic anisotropy (PMA) beyond the Fe and Co-based alloys. It is desired to figure out the quantum physics of PMA inherent to Mn-based alloys, which have never been reported. Here, the origin of PMA in ferrimagnetic Mn$_{3-δ}$Ga ordered alloys is investigated to resolve antiparallel-coupled Mn sites u…
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Mn-based alloys exhibit unique properties in the spintronics materials possessing perpendicular magnetic anisotropy (PMA) beyond the Fe and Co-based alloys. It is desired to figure out the quantum physics of PMA inherent to Mn-based alloys, which have never been reported. Here, the origin of PMA in ferrimagnetic Mn$_{3-δ}$Ga ordered alloys is investigated to resolve antiparallel-coupled Mn sites using x-ray magnetic circular and linear dichroism (XMCD/XMLD) and a first-principles calculation. We found that the contribution of orbital magnetic moments in PMA is small from XMCD and that the finite quadrupole-like orbital distortion through spin-flipped electron hopping is dominant from XMLD and theoretical calculations. These findings suggest that the spin-flipped orbital quadrupole formations originate from the PMA in Mn$_{3-δ}$Ga and bring the paradigm shift in the researches of PMA materials using x-ray magnetic spectroscopies.
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Submitted 7 May, 2020;
originally announced May 2020.
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First-principles evaluation of intrinsic, side-jump, and skew-scattering parts of anomalous Hall conductivities in disordered alloys
Authors:
K. Hyodo,
Y. Kota,
A. Sakuma
Abstract:
We develop a first-principles procedure for the individual evaluation of the intrinsic, side-jump, and skew-scattering contributions to the anomalous Hall conductivity $σ_{xy}$. This method is based on the different microscopic conductive processes of each origin of $σ_{xy}$ in the Kubo--Bastin formula. We also present an approach for implementing this scheme in the tight-binding linear muffin-tin…
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We develop a first-principles procedure for the individual evaluation of the intrinsic, side-jump, and skew-scattering contributions to the anomalous Hall conductivity $σ_{xy}$. This method is based on the different microscopic conductive processes of each origin of $σ_{xy}$ in the Kubo--Bastin formula. We also present an approach for implementing this scheme in the tight-binding linear muffin-tin orbital (TB-LMTO) method with the coherent potential approximation (CPA). The validity of this calculation method is demonstrated for disordered FePt and FePd alloys. We find that the estimated value of each origin of $σ_{xy}$ exhibits reasonable dependencies on the electron scattering in these disordered alloys.
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Submitted 21 August, 2016; v1 submitted 5 May, 2016;
originally announced May 2016.
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Mechanism of uniaxial magnetocrystalline anisotropy in transition metal alloys
Authors:
Yohei Kota,
Akimasa Sakuma
Abstract:
Magnetocrystalline anisotropy in transition metal alloys (FePt, CoPt, FePd, MnAl, MnGa, and FeCo) was studied using first-principles calculations to elucidate its specific mechanism. The tight-binding linear muffin-tin orbital method in the local spin-density approximation was employed to calculate the electronic structure of each compound, and the anisotropy energy was evaluated using the magneti…
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Magnetocrystalline anisotropy in transition metal alloys (FePt, CoPt, FePd, MnAl, MnGa, and FeCo) was studied using first-principles calculations to elucidate its specific mechanism. The tight-binding linear muffin-tin orbital method in the local spin-density approximation was employed to calculate the electronic structure of each compound, and the anisotropy energy was evaluated using the magnetic force theorem and the second-order perturbation theory in terms of spin-orbit interactions. We systematically describe the mechanism of uniaxial magnetocrystalline anisotropy in real materials and present the conditions under which the anisotropy energy can be increased. The large magnetocrystalline anisotropy energy in FePt and CoPt arises from the strong spin-orbit interaction of Pt. In contrast, even though the spin-orbit interaction in MnAl, MnGa, and FeCo is weak, the anisotropy energies of these compounds are comparable to that of FePd. We found that MnAl, MnGa, and FeCo have an electronic structure that is efficient in inducing the magnetocrystalline anisotropy in terms of the selection rule of spin-orbit interaction.
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Submitted 3 March, 2014; v1 submitted 23 July, 2013;
originally announced July 2013.
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First Principles Calculation of Magnetocrystalline Anisotropy Energy of MnBi and MnB_{1-x}Sn_x
Authors:
Akimasa Sakuma,
Yuki Manabe,
Yohei Kota
Abstract:
We calculated the magnetic anisotropy constant Ku of MnBi using a first principles approach, and obtained a negative Ku in agreeable with experimental results. Furthermore, we also found a band filling dependence indicating that a slight decrease in the valence electron number will change Ku from negative to positive. When some of the Bi is replaced with Sn to decrease the valence electron number,…
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We calculated the magnetic anisotropy constant Ku of MnBi using a first principles approach, and obtained a negative Ku in agreeable with experimental results. Furthermore, we also found a band filling dependence indicating that a slight decrease in the valence electron number will change Ku from negative to positive. When some of the Bi is replaced with Sn to decrease the valence electron number, the Ku value of MnBi1-xSnx drastically changes to a positive value, Ku~2 MJ/m3, for x > 0.05.
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Submitted 19 April, 2013;
originally announced April 2013.
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Degree of order dependence on magnetocrystalline anisotropy in bct FeCo alloys
Authors:
Yohei Kota,
Akimasa Sakuma
Abstract:
We investigate the magnetocrystalline anisotropy (MCA) energy of tetragonal distorted FeCo alloys depending on the degree of order by first-principles electronic structure calculation combined with the coherent potential approximation. The obtained results indicate that the MCA energy of FeCo alloys strongly depends on the degree of order under optimal conditions, where the axial ratio of the bct…
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We investigate the magnetocrystalline anisotropy (MCA) energy of tetragonal distorted FeCo alloys depending on the degree of order by first-principles electronic structure calculation combined with the coherent potential approximation. The obtained results indicate that the MCA energy of FeCo alloys strongly depends on the degree of order under optimal conditions, where the axial ratio of the bct structure is 1.25 and the composition is Fe0.5Co0.5. We find that the modification of the electronic structure resulting from electron scattering by chemical disorder has a considerable influence on the MCA under these conditions.
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Submitted 16 October, 2012;
originally announced October 2012.
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Spin-polarized electronic structures and transport properties of Fe-Co alloys
Authors:
Yohei Kota,
Tomohiro Takahashi,
Hiroki Tsuchiura,
Akimasa Sakuma
Abstract:
The electrical resistivities of Fe-Co alloys owing to random alloy disorder are calculated using the Kubo-Greenwood formula. The obtained electrical esistivities agree well with experimental data quantitatively at low temperature. The spin-polarization of Fe50Co50 estimated from the conductivity (86%) has opposite sign to that from the densities of the states at the Fermi level (-73%). It is fou…
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The electrical resistivities of Fe-Co alloys owing to random alloy disorder are calculated using the Kubo-Greenwood formula. The obtained electrical esistivities agree well with experimental data quantitatively at low temperature. The spin-polarization of Fe50Co50 estimated from the conductivity (86%) has opposite sign to that from the densities of the states at the Fermi level (-73%). It is found that the conductivity is governed mainly by s-electrons, and the s-electrons in the minority spin states are less conductive due to strong scattering by the large densities of the states of d-electrons than the majority spin electrons.
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Submitted 23 March, 2009;
originally announced March 2009.
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Ab-initio Study on the Magnetic Structures in the Ordered Mn3Pt Alloy
Authors:
Yohei Kota,
Hiroki Tsuchiura,
Akimasa Sakuma
Abstract:
We study the electronic states of the magnetically ordered Mn3Pt alloy within the density functional theory. Mn3Pt has been believed that one third of Mn atoms have no magnetic moment in an antiferromagnetic phase (so-called the F-phase) realized in the temperature range of 400 K < T < 475 K. We show that this experimentally suggested spin configuration is energetically so much unfavorable that…
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We study the electronic states of the magnetically ordered Mn3Pt alloy within the density functional theory. Mn3Pt has been believed that one third of Mn atoms have no magnetic moment in an antiferromagnetic phase (so-called the F-phase) realized in the temperature range of 400 K < T < 475 K. We show that this experimentally suggested spin configuration is energetically so much unfavorable that it would be irrelevant to the F-phase. We discuss the possibility that the spin moments on the one third of Mn atoms are not paramagnetic but thermally fluctuating in the F-phase. The present results have an immediate connection with the recent neutron scattering study [T. Ikeda and Y. Tsunoda, J. Phys. Soc. Jpn., vol. 72, pp. 2614-2621, October. 2003.].
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Submitted 23 June, 2008;
originally announced June 2008.
